JPH0542851B2 - - Google Patents
Info
- Publication number
- JPH0542851B2 JPH0542851B2 JP58211714A JP21171483A JPH0542851B2 JP H0542851 B2 JPH0542851 B2 JP H0542851B2 JP 58211714 A JP58211714 A JP 58211714A JP 21171483 A JP21171483 A JP 21171483A JP H0542851 B2 JPH0542851 B2 JP H0542851B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- region
- emitter
- base
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000000295 complement effect Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000003321 amplification Effects 0.000 description 11
- 238000003199 nucleic acid amplification method Methods 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000002457 bidirectional effect Effects 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 2
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
Landscapes
- Bipolar Integrated Circuits (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58211714A JPS60105264A (ja) | 1983-11-12 | 1983-11-12 | 集積化半導体スイツチ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58211714A JPS60105264A (ja) | 1983-11-12 | 1983-11-12 | 集積化半導体スイツチ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60105264A JPS60105264A (ja) | 1985-06-10 |
JPH0542851B2 true JPH0542851B2 (enrdf_load_stackoverflow) | 1993-06-29 |
Family
ID=16610379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58211714A Granted JPS60105264A (ja) | 1983-11-12 | 1983-11-12 | 集積化半導体スイツチ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60105264A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60217730A (ja) * | 1984-04-13 | 1985-10-31 | Hitachi Ltd | 半導体装置 |
-
1983
- 1983-11-12 JP JP58211714A patent/JPS60105264A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60105264A (ja) | 1985-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0139873B1 (ko) | 반도체 집적회로장치 | |
US3955210A (en) | Elimination of SCR structure | |
KR102728482B1 (ko) | 트랜지스터 및 다이오드를 포함하는 회로 및 소자 | |
US3427512A (en) | Semiconductor low voltage switch | |
US4807009A (en) | Lateral transistor | |
EP0041363B1 (en) | Schmitt trigger circuit with a hysteresis characteristic | |
JPH02130951A (ja) | 半導体素子の短絡保護回路 | |
JPH0542851B2 (enrdf_load_stackoverflow) | ||
US4837458A (en) | Flip-flop circuit | |
US6057577A (en) | Component of protection of an integrated MOS power transistor against voltage gradients | |
JPH02226808A (ja) | 過電流保護機能付きパワーmosfet | |
JPH0235552B2 (enrdf_load_stackoverflow) | ||
JP4838421B2 (ja) | アナログ・スイッチ | |
US5382837A (en) | Switching circuit for semiconductor device | |
US5986290A (en) | Silicon controlled rectifier with reduced substrate current | |
US4096400A (en) | Inductive load driving amplifier | |
JPH0535624Y2 (enrdf_load_stackoverflow) | ||
JPS6127932B2 (enrdf_load_stackoverflow) | ||
US4604640A (en) | Darlington transistors | |
JP3570338B2 (ja) | 電源逆接続保護回路 | |
JPS585531B2 (ja) | ハンドウタイカデンリユウシヤダンカイロ | |
JPS62295448A (ja) | 静電気に対する保護装置を備えた集積回路 | |
JPH05251646A (ja) | 集積回路及びそのトランジスタのエミッタ−ベース間逆バイアス損傷を防止する方法 | |
Morris | Semiconductor Devices | |
Reif et al. | PMOS input merged bipolar/sidewall MOS transistors (PBiMOS transistors) |