JPH0542851B2 - - Google Patents
Info
- Publication number
- JPH0542851B2 JPH0542851B2 JP58211714A JP21171483A JPH0542851B2 JP H0542851 B2 JPH0542851 B2 JP H0542851B2 JP 58211714 A JP58211714 A JP 58211714A JP 21171483 A JP21171483 A JP 21171483A JP H0542851 B2 JPH0542851 B2 JP H0542851B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- region
- emitter
- base
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000000295 complement effect Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000003321 amplification Effects 0.000 description 11
- 238000003199 nucleic acid amplification method Methods 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000002457 bidirectional effect Effects 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 2
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
Landscapes
- Bipolar Integrated Circuits (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58211714A JPS60105264A (ja) | 1983-11-12 | 1983-11-12 | 集積化半導体スイツチ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58211714A JPS60105264A (ja) | 1983-11-12 | 1983-11-12 | 集積化半導体スイツチ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60105264A JPS60105264A (ja) | 1985-06-10 |
| JPH0542851B2 true JPH0542851B2 (cs) | 1993-06-29 |
Family
ID=16610379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58211714A Granted JPS60105264A (ja) | 1983-11-12 | 1983-11-12 | 集積化半導体スイツチ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60105264A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60217730A (ja) * | 1984-04-13 | 1985-10-31 | Hitachi Ltd | 半導体装置 |
-
1983
- 1983-11-12 JP JP58211714A patent/JPS60105264A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60105264A (ja) | 1985-06-10 |
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