JPH0541699B2 - - Google Patents
Info
- Publication number
- JPH0541699B2 JPH0541699B2 JP5160587A JP5160587A JPH0541699B2 JP H0541699 B2 JPH0541699 B2 JP H0541699B2 JP 5160587 A JP5160587 A JP 5160587A JP 5160587 A JP5160587 A JP 5160587A JP H0541699 B2 JPH0541699 B2 JP H0541699B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- workpiece
- vacuum chamber
- heater
- heating device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007740 vapor deposition Methods 0.000 claims description 44
- 238000010438 heat treatment Methods 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000000758 substrate Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910052755 nonmetal Inorganic materials 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 6
- 150000002843 nonmetals Chemical class 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910000809 Alumel Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910001179 chromel Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910000687 transition metal group alloy Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62051605A JPS63219571A (ja) | 1987-03-06 | 1987-03-06 | 蒸着装置 |
| US07/131,009 US4854264A (en) | 1986-12-10 | 1987-12-10 | Vacuum evaporating apparatus |
| DE8787310900T DE3786237T2 (de) | 1986-12-10 | 1987-12-10 | Vorrichtung fuer vakuumverdampfung. |
| KR1019870014123A KR930007853B1 (ko) | 1986-12-10 | 1987-12-10 | 진공 증발장치 |
| EP87310900A EP0271351B1 (en) | 1986-12-10 | 1987-12-10 | Vacuum evaporating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62051605A JPS63219571A (ja) | 1987-03-06 | 1987-03-06 | 蒸着装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63219571A JPS63219571A (ja) | 1988-09-13 |
| JPH0541699B2 true JPH0541699B2 (enrdf_load_html_response) | 1993-06-24 |
Family
ID=12891535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62051605A Granted JPS63219571A (ja) | 1986-12-10 | 1987-03-06 | 蒸着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63219571A (enrdf_load_html_response) |
-
1987
- 1987-03-06 JP JP62051605A patent/JPS63219571A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63219571A (ja) | 1988-09-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0271351B1 (en) | Vacuum evaporating apparatus | |
| US5344492A (en) | Vapor growth apparatus for semiconductor devices | |
| US20110253037A1 (en) | Vacuum heating and cooling apparatus | |
| KR101363147B1 (ko) | 증착 방법 및 증착 장치 | |
| US4668480A (en) | 7C apparatus for forming crystalline films of compounds | |
| US20030111014A1 (en) | Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds | |
| JP2001187332A (ja) | 薄膜作成装置 | |
| US20080173241A1 (en) | Vapor deposition sources and methods | |
| JP2725026B2 (ja) | 蒸着用の蒸発源 | |
| JP4593008B2 (ja) | 蒸着源並びにそれを用いた薄膜形成方法及び形成装置 | |
| JPH0541699B2 (enrdf_load_html_response) | ||
| EP0609886B1 (en) | Method and apparatus for preparing crystalline thin-films for solid-state lasers | |
| CN112376035A (zh) | 一种适用于制备高In组分InGaN材料的反应装置 | |
| US7022191B2 (en) | Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof | |
| CN214655232U (zh) | 一种适用于制备高In组分InGaN材料的反应装置 | |
| EP0423956A1 (en) | Method for producing charge transfer complex crystals from the vapor phase | |
| US20050066900A1 (en) | Apparatus for forming the thin film on an organic light-emitting doide component | |
| KR100625966B1 (ko) | 유기 ｅｌ소자의 박막 증착방법 및 그 장치 | |
| JP2003045650A (ja) | 有機ｅｌ素子の製造装置 | |
| JP2579490B2 (ja) | オ−ム接触電極層形成法及びそれに用いる装置 | |
| JPH06168877A (ja) | 半導体装置の製造装置 | |
| JPH02272724A (ja) | 気相成長装置 | |
| JPH0241165Y2 (enrdf_load_html_response) | ||
| TW557640B (en) | The manufacturing apparatus of organic light-emitted diode (OLED) devices | |
| KR100548904B1 (ko) | 금속 증발용 보트의 제조방법 및 제조장치 |