JPH0541695B2 - - Google Patents
Info
- Publication number
- JPH0541695B2 JPH0541695B2 JP1070593A JP7059389A JPH0541695B2 JP H0541695 B2 JPH0541695 B2 JP H0541695B2 JP 1070593 A JP1070593 A JP 1070593A JP 7059389 A JP7059389 A JP 7059389A JP H0541695 B2 JPH0541695 B2 JP H0541695B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- ion
- layer
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 55
- 229910021645 metal ion Inorganic materials 0.000 claims description 11
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- -1 titanium ions Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 24
- 238000005468 ion implantation Methods 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 239000002344 surface layer Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜形成方法に係り、特に基板とこれ
に密着形成される薄膜との親和性を高め、薄膜の
密着強度を向上することのできる薄膜形成方法に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for forming a thin film, and in particular, it is possible to improve the affinity between a substrate and a thin film formed in close contact with the same, and to improve the adhesion strength of the thin film. This invention relates to a thin film forming method.
［従来の技術］
一般に、基板上に薄膜を形成するに際し、基板
となるものにはステンレス、超鋼材料、シリコン
ウエーハ等種々のものが知られている。このよう
な鉄系やシリコン系は個々に原子の配列や原子間
距離が異なり固有の特性を有する。したがつて基
板が異なるとその材質も異なる。また、基板に封
着される薄膜には機能性膜など取り付ける材料は
種々雑多に存在する。そこで、基板に薄膜を形成
するにはそれぞれ用途目的に見合つた材料を選択
することになる。[Prior Art] Generally, when forming a thin film on a substrate, various substrates are known, such as stainless steel, super steel, and silicon wafers. These iron-based and silicon-based materials each have unique characteristics with different atomic arrangements and interatomic distances. Therefore, different substrates have different materials. Furthermore, there are various materials for attaching a thin film to a substrate, such as a functional film. Therefore, in order to form a thin film on a substrate, a material suitable for each purpose must be selected.
［発明が解決しようとする課題］
ところで、基板に薄膜を密着形成する場合に、
基板と薄膜との親和性が高い程、薄膜の密着強度
は強化される。したがつて、親和性が確保される
場合には基板上に直接薄膜を形成することができ
る。[Problem to be solved by the invention] By the way, when forming a thin film in close contact with a substrate,
The higher the affinity between the substrate and the thin film, the stronger the adhesion strength of the thin film. Therefore, if affinity is ensured, a thin film can be formed directly on the substrate.
他方、上述したように基板に種々の特性があ
り、これに付着される薄膜にも種々の機能が求め
られる。このため、互いに親和性に劣る材料の組
み合わせもあり、このような場合は薄膜の密着強
度が弱く、薄膜は剥がれやすいことになる。 On the other hand, as mentioned above, the substrate has various characteristics, and the thin film attached thereto is also required to have various functions. For this reason, there are some combinations of materials that have poor affinity for each other, and in such cases, the adhesion strength of the thin film is weak and the thin film is likely to peel off.
そこで、従来は互いに親和性が低い材料の場合
はこれら基板と薄膜との間に両者の性質の似通つ
た中間層（バツフアー層）を介在させなければな
らない問題があつた。例えば、シリコンに金属の
薄膜を形成するにはスパツタリングあるいは真空
蒸着により一般的になされており、このような原
子の個々の特性が異なる材料の場合には基板表面
部に金属膜を形成するに先立つてその金属膜と比
較的性質の似通つた中間層を形成しその中間層を
介して基板とこれに付着される金属膜との密着強
度を確保しなければならなたつた。したがつて、
互いに特性のことなる材料ほど基板から順次重ね
て薄膜に近似する性質の中間層を介在させること
になる。 Therefore, in the past, in the case of materials having low affinity for each other, there was a problem that an intermediate layer (buffer layer) having similar properties had to be interposed between the substrate and the thin film. For example, forming a thin metal film on silicon is generally done by sputtering or vacuum evaporation, and in the case of materials with different individual characteristics of atoms, prior to forming a metal film on the surface of the substrate. Therefore, it was necessary to form an intermediate layer having properties relatively similar to that of the metal film, and to ensure adhesion strength between the substrate and the metal film attached thereto via the intermediate layer. Therefore,
Materials with different properties are sequentially stacked on each other from the substrate, and an intermediate layer having properties similar to a thin film is interposed.
本発明は上記問題点を有効に解決すべく創案さ
れたものである。 The present invention has been devised to effectively solve the above problems.
本発明は基板に薄膜を密着形成するに際し、基
板と薄膜との密着強度を高めることのできる薄膜
形成方法を提供することを目的とする。 An object of the present invention is to provide a thin film forming method that can increase the adhesion strength between a substrate and a thin film when the thin film is closely formed on a substrate.
［課題を解決するための手段］
本発明はステンレス製基板にチタンナイトライ
ドからなる温度センサ用薄膜を密着形成するに際
し、洗浄された上記基板表面部から基板内に上記
薄膜の金属イオンとなるチタンイオンを注入し、
そのイオン注入層を上記薄膜の実際の使用温度よ
り50〜100度高い温度まで加熱した後、その加熱
処理されたイオン注入層上に上記薄膜を形成した
ものである。[Means for Solving the Problems] In the present invention, when a thin film for a temperature sensor made of titanium nitride is closely formed on a stainless steel substrate, titanium, which becomes metal ions of the thin film, flows from the cleaned surface of the substrate into the substrate. Inject ions,
The ion-implanted layer is heated to a temperature 50 to 100 degrees higher than the actual operating temperature of the thin film, and then the thin film is formed on the heated ion-implanted layer.
［作用］
温度センサ用薄膜を形成するに際し、先ずステ
ンレス製基板が洗浄され、その洗浄された基板内
にはその表面部から後に形成される薄膜の金属イ
オンとなるチタンイオンが打ち込まれ注入され
る。したがつて、基板内にはその深さ方向にイオ
ン注入層が形成されることになる。この場合、イ
オンが注入されても基板内の表層部付近のイオン
注入密度が低く、表層部から深さ方向に少し入つ
た領域側のイオンを注入密度が高くなり、注入密
度は不均一になる。[Operation] When forming a thin film for a temperature sensor, a stainless steel substrate is first cleaned, and titanium ions, which will become the metal ions of the thin film that will be formed later, are implanted from the surface of the cleaned substrate. . Therefore, an ion implantation layer is formed in the depth direction of the substrate. In this case, even if ions are implanted, the ion implantation density near the surface layer in the substrate is low, and the ion implantation density is high in the region slightly deeper from the surface layer, resulting in non-uniform implantation density. .
そこで、基板内にイオンを打ち込み注入した後
はそのイオン注入層を薄膜の実際の使用温度より
50〜100度高い温度まで加熱し、イオンを表面部
側に熱拡散させて注入密度を均一化する。 Therefore, after implanting ions into the substrate, the ion-implanted layer is heated to a temperature higher than the actual operating temperature of the thin film.
The material is heated to a temperature 50 to 100 degrees higher, and the ions are thermally diffused toward the surface to make the implantation density uniform.
したがつて、表層部側のイオン密度が高くな
り、基板とその表面部上に後に密着形成される薄
膜との親和性が高められ、薄膜の密着強度が向上
することになる。 Therefore, the ion density on the surface layer side becomes high, and the affinity between the substrate and the thin film that will be closely formed later on the surface of the substrate is increased, and the adhesion strength of the thin film is improved.
［実施例］
以下、本発明の一実施例を添付図面に従つて詳
述する。[Example] Hereinafter, an example of the present invention will be described in detail with reference to the accompanying drawings.
第１図に示すように、基板１にはフラツトな表
面部２が形成される。 As shown in FIG. 1, a flat surface portion 2 is formed on a substrate 1. As shown in FIG.
この基板１の表面部２にはこれに沿つて薄膜３
が形成される。本実施例においてはたとえばステ
ンレスからなる基板１にチタンナイトライド
（TiN）からなる薄膜３が形成される。 A thin film 3 is formed along the surface portion 2 of the substrate 1.
is formed. In this embodiment, a thin film 3 made of titanium nitride (TiN) is formed on a substrate 1 made of stainless steel, for example.
そこで、基板１に薄膜３を形成するにあつては
先ず、第２図に示すように基板１の表面部２の洗
浄（エツチング）がなされる。次いで、洗浄され
た基板１の表面部２からその内部に、後に密着形
成される薄膜３の金属イオンを打ち込み注入す
る。本実施例においては薄膜３の金属イオンとな
るチタンイオンを注入することになる。 Therefore, in forming the thin film 3 on the substrate 1, the surface portion 2 of the substrate 1 is first cleaned (etched) as shown in FIG. Next, metal ions for the thin film 3 to be closely formed later are implanted into the cleaned substrate 1 from the surface portion 2 thereof. In this embodiment, titanium ions, which will become the metal ions of the thin film 3, are implanted.
このように基板１内に金属イオンが注入される
と第３図に示すように、基板１内にはその表面部
２から深さ方向に金属イオンによる不純物層が形
成されることになる。すなわち、基板１内にはイ
オン注入層４が形成される。このイオン注入層４
においては第４図の実線で示すように、不均一な
イオン注入密度となる。 When metal ions are implanted into the substrate 1 in this manner, an impurity layer of metal ions is formed in the substrate 1 in the depth direction from the surface portion 2, as shown in FIG. That is, an ion implantation layer 4 is formed within the substrate 1. This ion implantation layer 4
In this case, as shown by the solid line in FIG. 4, the ion implantation density is non-uniform.
すなわち、基板１内のうちの表層部５付近が粗
になり、これより深さ方向に少し入つた領域６に
おいて密度が高くなり、以後下方の領域７が低く
なる密度分布を形成する。 That is, a density distribution is formed in which the vicinity of the surface layer 5 in the substrate 1 is rough, the density is high in a region 6 a little deeper in the depth direction, and the density is lower in the region 7 below.
そこで、イオン注入密度を表層部５からその深
さ方向に均一にするために、イオン注入層４を加
熱（アニーリング）することになる。 Therefore, in order to make the ion implantation density uniform in the depth direction from the surface layer 5, the ion implanted layer 4 is heated (annealed).
具体的には温度センサに採用される薄膜３であ
る場合には薄膜３の実際の使用温度が予め定めら
れた使用許容温度を越えると、薄膜３の特性が変
化する虞れがある。これを防止するために、本実
施例では薄膜３の実際の使用環境温度から順次上
げて高い温度でイオン注入層４が加熱処理され
る。たとえば、薄膜３の使用温度が100度のとき
は150〜200度でイオン注入層４が加熱処理され
る。 Specifically, in the case of the thin film 3 employed in a temperature sensor, if the actual operating temperature of the thin film 3 exceeds a predetermined allowable operating temperature, there is a risk that the characteristics of the thin film 3 may change. In order to prevent this, in this embodiment, the ion-implanted layer 4 is heat-treated at a temperature that is gradually raised from the actual operating environment temperature of the thin film 3. For example, when the operating temperature of the thin film 3 is 100 degrees, the ion implantation layer 4 is heat-treated at 150 to 200 degrees.
このように基板１のイオン注入層４が加熱処理
されると第４図および第５図に示すように、金属
イオンは熱拡散され、表層部５からその深さ方向
に少し入つた領域６の密度が高い部分の金属イオ
ンはその深さ方向上下（第４図矢印）に移動し、
表層部５側のイオンは密度が高くなる。したがつ
て、全体的には第４図の鎖線で示すように、なだ
らかなイオン密度分布が形成される。 When the ion-implanted layer 4 of the substrate 1 is heat-treated in this way, as shown in FIGS. 4 and 5, the metal ions are thermally diffused into a region 6 slightly extending from the surface layer 5 in the depth direction. Metal ions in areas with high density move up and down in the depth direction (arrows in Figure 4).
Ions on the surface layer 5 side have a higher density. Therefore, as a whole, a gentle ion density distribution is formed as shown by the chain line in FIG.
このようにイオン注入層４が加熱処理され金属
イオンが拡散された後は第１図に示すように、基
板１の表面部２に沿つてすなわちイオン注入層４
上に薄膜３を形成することになる。図示例の薄膜
３はイオンミキシングにより形成され三層のイオ
ンミキシング膜を示したものである。その他、本
発明においては真空蒸着、イオンプレーテイン
グ、スパツタリングにより薄膜３を形成してもよ
い。 After the ion implantation layer 4 is heat-treated and the metal ions are diffused in this way, as shown in FIG.
A thin film 3 will be formed thereon. The illustrated thin film 3 is formed by ion mixing and shows a three-layer ion mixing film. In addition, in the present invention, the thin film 3 may be formed by vacuum evaporation, ion plating, or sputtering.
このように本発明は基板１にイオン注入した
後、そのイオン注入層４を加熱するので、基板１
内の表層部５に薄膜３の金属イオンが集められ、
薄膜３の特性にあわせて基板１の表面部２の性質
を可変することができる。特に、イオン注入層４
を薄膜３の実際の使用温度より50〜100度高い温
度まで加熱するために、薄膜３の特性を損なうこ
となくイオン密度を均一化することができる。す
なわち、50〜100度より高い温度で加熱したので
は薄膜３の特性が変化し、低い温度で加熱したの
では均一なイオン注入密度は得られない。このた
め、基板１とその表面部２上に密着形成される薄
膜３との親和性が高められ、その密着強度を単に
基板１に薄膜３を形成するよりさらに向上させる
ことができる。 In this way, the present invention heats the ion implantation layer 4 after ion implantation into the substrate 1.
The metal ions of the thin film 3 are collected in the inner surface layer 5,
The properties of the surface portion 2 of the substrate 1 can be varied in accordance with the properties of the thin film 3. In particular, the ion implantation layer 4
Since the thin film 3 is heated to a temperature 50 to 100 degrees higher than the actual operating temperature of the thin film 3, the ion density can be made uniform without impairing the properties of the thin film 3. That is, heating at a temperature higher than 50 to 100 degrees will change the characteristics of the thin film 3, and heating at a lower temperature will not provide uniform ion implantation density. Therefore, the affinity between the substrate 1 and the thin film 3 closely formed on the surface portion 2 thereof is enhanced, and the adhesion strength can be further improved than simply forming the thin film 3 on the substrate 1.
また、従来例の如く、中間層を介在させる必要
がないので、基板１に薄膜３を直接形成すること
のできる組み合わせ例が多くなり、中間層を介在
させない基板材料と薄膜材との選択範囲を広げる
ことができる。 In addition, since there is no need to interpose an intermediate layer as in the conventional example, there are many combination examples in which the thin film 3 can be directly formed on the substrate 1, and the selection range of substrate materials and thin film materials that do not require an intermediate layer is increased. Can be expanded.
［発明の効果］
以上要するに本発明によれば、イオン注入され
たイオン注入層を薄膜の実際の使用温度より50〜
100度高い温度まで加熱するために、薄膜の特性
を損なうことなくイオン密度を均一化することが
でき、基板と温度センサ用薄膜との親和性が高め
られて薄膜の密着強度を高めることができる。[Effects of the Invention] In summary, according to the present invention, the ion-implanted layer is heated to a temperature of 50 to 50°C above the actual operating temperature of the thin film.
Because it is heated to a temperature 100 degrees higher, the ion density can be made uniform without impairing the properties of the thin film, and the affinity between the substrate and the temperature sensor thin film can be improved, increasing the adhesion strength of the thin film. .
第１図は基板に薄膜を密着形成した本発明の一
実施例を示す断面図、第２図は洗浄基板を示す側
面図、第３図はイオン注入した基板を示す断面
図、第４図は基板内のイオン密度分布を示す図、
第５図はイオン注入され加熱処理された基板を示
す断面図である。
図中、１は基板、２は基板表面部、３は薄膜、
４はイオン注入層である。
FIG. 1 is a cross-sectional view showing an embodiment of the present invention in which a thin film is closely formed on a substrate, FIG. 2 is a side view showing a cleaned substrate, FIG. 3 is a cross-sectional view showing a substrate into which ions have been implanted, and FIG. A diagram showing the ion density distribution within the substrate,
FIG. 5 is a cross-sectional view showing a substrate that has been ion-implanted and heat-treated. In the figure, 1 is the substrate, 2 is the substrate surface, 3 is the thin film,
4 is an ion implantation layer.
Claims (1)
なる温度センサ用薄膜を密着形成するに際し、洗
浄された上記基板表面部から基板内に上記薄膜の
金属イオンとなるチタンイオンを注入し、そのイ
オン注入層を上記薄膜の実際の使用温度より50〜
100度高い温度まで加熱した後、その加熱処理さ
れたイオン注入層上に上記薄膜を形成したことを
特徴とする温度センサ用薄膜形成方法。1. When closely forming a temperature sensor thin film made of titanium nitride on a stainless steel substrate, titanium ions, which will become the metal ions of the thin film, are implanted from the cleaned surface of the substrate into the substrate, and the ion-implanted layer is bonded to the surface of the substrate. 50~ than the actual operating temperature of the thin film
A method for forming a thin film for a temperature sensor, characterized in that the thin film is formed on the heat-treated ion-implanted layer after heating to a temperature 100 degrees higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7059389A JPH02250952A (en) | 1989-03-24 | 1989-03-24 | Thin film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7059389A JPH02250952A (en) | 1989-03-24 | 1989-03-24 | Thin film formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02250952A JPH02250952A (en) | 1990-10-08 |
| JPH0541695B2 true JPH0541695B2 (en) | 1993-06-24 |
Family
ID=13436011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7059389A Granted JPH02250952A (en) | 1989-03-24 | 1989-03-24 | Thin film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02250952A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08102360A (en) * | 1994-09-29 | 1996-04-16 | Toyota Central Res & Dev Lab Inc | Orfanic/inorganic complex thin-film electroluminescent element |
| US7648586B2 (en) | 2002-07-31 | 2010-01-19 | National Institute Of Advanced Industrial & Technology | Ultra-low carbon stainless steel |
| US7785718B2 (en) | 2003-12-16 | 2010-08-31 | Panasonic Corporation | Organic electroluminescent device and method for manufacturing the same |
| KR101844575B1 (en) * | 2016-12-23 | 2018-04-03 | 주식회사 포스코 | Gold color steel plate and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61272364A (en) * | 1985-05-28 | 1986-12-02 | Rikagaku Kenkyusho | Metallic mold |
-
1989
- 1989-03-24 JP JP7059389A patent/JPH02250952A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61272364A (en) * | 1985-05-28 | 1986-12-02 | Rikagaku Kenkyusho | Metallic mold |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02250952A (en) | 1990-10-08 |
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