JPH0534930A - Method and device for development - Google Patents

Abstract

PURPOSE:To improve the supply of developer and to provide a developing device capable of easily forming a resist pattern excellent in surface quality with high precision. CONSTITUTION:A resist film formed on the surface of a substrate is developed. In this case, the resist film is weakly developed with low dissolving performance in the first stage and strongly developed with high dissolving performance in the second stage. This device for dip-developing the resist film is provided with a developing tank 1 having a port 1a for supplying the developer to be used in the first stage on its one side wall and a port 1b for supplying the developer to be used in the second stage on the other side wall.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing method and a developing apparatus, and more particularly to improvement of a developing solution supply method.

With the miniaturization of semiconductor devices due to higher integration, it is necessary to improve the precision of resist pattern formation and the quality of the resist film surface after development processing in order to cope with the miniaturization.

Under the circumstances as described above, there is a demand for a developing method and a developing apparatus capable of forming a resist pattern having a good surface quality after development with high accuracy.

[0004]

2. Description of the Related Art A conventional developing method and developing apparatus will be described in detail with reference to FIGS. FIG. 4 is a diagram showing a conventional developing tank, FIG. 5 is a diagram showing a conventional spray developing device, and FIG. 6 is a diagram showing a conventional dropping developing device.

The conventional development by the dip method is a developing tank having a developing solution supply port 11a for supplying a developing solution to the lower portion and a developing solution discharge port 11c for discharging a used developing solution as shown in FIG. 11, the developing solution discharge port 11c is closed, the developing solution is supplied from the developing solution supply port 11a into the developing tank 11, and then the substrate is dipped in the developing solution to perform development.

In a conventional spray developing apparatus used for developing by a spray method, as shown in FIG. 5, the substrate 7 is vacuum-sucked to the spin chuck 23, the spin chuck 23 is rotatable, and the spin chuck 23 has an upper portion. A spray chip 24 for spraying a developing solution and a spray chip 26 for spraying a rinse liquid for cleaning the substrate 7 after development are provided, and the periphery of the substrate 7 is surrounded by a developing cup 22 as shown in the drawing. The developing solution sprayed on the surface is scattered around the rotating substrate 7, and the developing solution attached to the inner wall of the developing cup 22 flows down and is discharged from the lower drain port 22b. An exhaust port 22a is provided in the lower part of the developing cup 22 to exhaust the air in the developing cup 22.

When developing with such a spray developing apparatus, first, the substrate 7 is vacuum-adsorbed on the surface of the spin chuck 23, and while the spin chuck 23 is being rotated, a developing solution is ejected from the spray chip 24 to develop. After the development is completed, a rinsing liquid is sprayed from the spray tip 26 for cleaning.

In the conventional dropping developing device used for developing by the dropping method, as shown in FIG. 6, the substrate 7 is vacuum-sucked to the spin chuck 33, and the spin chuck 33 is rotatable.
A nozzle 34 for dropping a developing solution is provided above the spin chuck 33.
And a nozzle 36 for dropping a rinsing liquid for cleaning the substrate 7 after development is provided, the periphery of the substrate 7 is surrounded by the developing cup 32 as shown in the drawing, and the developing liquid sprayed on the surface of the substrate 7 is rotated. Scattering around the rotating substrate 7 and developing cup 32
The developer that adhered to the inner wall of the
Is to be discharged from. An exhaust port 32a is provided in the lower portion of the developing cup 32 to exhaust the air in the developing cup 32.

When developing with such a dropping developing apparatus, first, the substrate 7 is vacuum-adsorbed on the surface of the spin chuck 33, and the developing solution is dropped from the nozzle 34 while rotating the spin chuck 33 to develop. After the development is completed, the rinse liquid is dropped from the nozzle 36 for cleaning.

[0010]

In the conventional developing method and developing apparatus described above, when the adhesiveness at the interface between the resist film 8 and the chromium film 9 as shown in FIG. 7 is low, the chromium film 9 is used. When the resist film 8 formed on the surface of the substrate 7 on which is deposited is developed to form an opening window 8a and the chromium film 9 is etched by the wet method using the resist film 8 as a mask, the etching solution is Will penetrate into the interface between the chrome film 9 and the chrome film 9, making it difficult to control etching, and the pattern of the chrome film 9 will not be formed perpendicularly to the surface of the substrate 7, and a tapered pattern as shown in the drawing will be formed. .

In order to prevent this, the surface of the chromium film 9 is covered with hexamethylene disilazane (HMD).
The surface treatment is performed by S) to change the hydrophilicity of the surface of the chromium film 9 to hydrophobic.

When the adhesiveness at the interface between the resist film 8 and the chromium film 9 as shown in FIG. 8 which has been subjected to such a treatment is high, the dissolution performance of the resist in the developing solution is deteriorated, so that it is shown in FIG. As described above, the undeveloped residual resist film 8c having a film thickness of 10 to 90Å remains in the opening window 8b, and the chromium film 9 thereunder is not completely etched or the wettability of the resist is poor. Has a problem that bubbles adhere to the surface of the chrome film 9 and the chrome film 9 in that portion becomes defective in etching.

Therefore, as a measure for preventing such an etching failure of the chromium film 9, the residual resist film 8c is removed by using plasma or deep ultraviolet rays, or the wettability of the resist is improved to improve the surface of the chromium film 9. Although it is necessary to prevent air bubbles from adhering to the surface, it is difficult to take such measures with high accuracy, and dust generated due to dry processing adheres, and this dust also causes etching defects. There was a problem that

In view of the above circumstances, the present invention has an object to provide a developing method and a developing apparatus capable of easily and easily forming a resist pattern having good surface quality with high accuracy.

[0015]

According to the developing method of the present invention, in the developing step of developing the resist film formed on the surface of the substrate, the weak dissolution performance is low in the first half step of the developing treatment of the resist film. It is configured so as to include a developing process and a strong developing process having a high dissolution performance, which is performed in the latter half of the developing process of the resist film.

The developing device of the present invention is a developing device for developing a resist film by the above-mentioned developing method, and is a developing solution supplying means for the developing solution used in the first half step and a developing solution for the developing solution used in the latter half step. It is configured so as to include a supply means together.

[0017]

That is, in the present invention, since the developing device is provided with the two types of developing solution supply means, the weak developing treatment with low dissolution performance is performed in the first half step of the resist film developing treatment, and the latter half developing step is performed. In the process, it is possible to perform strong development processing with high dissolution performance, so it is possible to significantly reduce the residual resist film in the opening window of the resist film even when the adhesion at the interface between the resist film and the chromium film is high. Therefore, the chromium film in the opening window can be completely etched.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The first embodiment of the present invention will be described in detail below with reference to FIG. 1, the second embodiment of the present invention with reference to FIG. 2, and the third embodiment of the present invention with reference to FIG.

FIG. 1 is a diagram showing a developing device of a first embodiment according to the present invention, FIG. 2 is a diagram showing a developing device of a second embodiment according to the present invention, and FIG. 3 is a third embodiment according to the present invention. It is a diagram showing a developing device of.

The substrates used in the first, second and third embodiments are 5 inch square, 0.09 inch (2.3 mm) thick quartz plates, on the surface of which a chromium film having a thickness of 1,000 Å is sputtered.
A resist film (positive type electron beam resist ZEP520 manufactured by Nippon Zeon Co., Ltd.) having a film thickness of 5,000Å is applied on the surface thereof.

The exposure voltage of this resist film is 10 KV.
The exposure amount is 7 μc / cm ² . In the development by the dipping method of the present invention, as shown in FIG. 1, a developing solution supply port 1a for supplying the developing solution, a developing solution supply port 1b, and a developing solution discharge port 1c for discharging the used developing solution are provided in the lower part. Using the provided developing tank 1, the developing solution discharge port 1c is closed, and the developing solution with a low dissolution performance is supplied from the developing solution supply port 1a into the developing tank 1, and then the substrate is dipped in this developing solution to form the first half. Development is performed, the developing solution discharge port 1c is opened to discharge the developing solution, and then a developing solution having a high dissolution performance is supplied from the developing solution supply port 1b into the developing tank 1, and then the substrate is placed in the developing solution. The second half of the development is done by dipping.

In the spray developing apparatus used for developing by the spray method of the present invention, as shown in FIG. 2, the substrate 7 is vacuum-sucked to the spin chuck 3, the spin chuck 3 is rotatable, and the spin chuck 3 is mounted on the spin chuck 3. Is provided with a spray chip 4 for injecting a developing solution having a low dissolution performance, a spray chip 5 for injecting a developing solution having a high dissolution performance, and a spray chip 6 for injecting a rinse liquid for cleaning the substrate 7 after development. The periphery of 7 is surrounded by the developing cup 2 as shown in the figure, the developing solution sprayed on the surface of the substrate 7 is scattered around the rotating substrate 7, and the developing solution attached to the inner wall of the developing cup 2 flows down. It is designed to be discharged from the lower drainage port 2b. An exhaust port 2a is provided in the lower part of the developing cup 2 to exhaust the air in the developing cup 2.

When developing with such a spray developing apparatus, first, the substrate 7 is vacuum-adsorbed on the surface of the spin chuck 3 and the spin chuck 3 is rotated 100 times per minute while the spray chip 4 has a low melting performance as described below. When developing is performed by ejecting the developing solution, the ambient temperature and the spray tip 4
Temperature drops to 15 ° C. Developer: Methyl / Ethyl /
Ketone (MEK) and methyl isobutylene ketone (M
IBK) mixed solution, flow rate: 100 cc / min, atmospheric temperature at the start of development, temperature of spray tip 4 and liquid temperature: 21 °
C, development time: 240 seconds.

After completion of this development, when the following developing solution having a high dissolving ability is jetted from the spray tip 5 to develop, the residual resist film at the interface between the resist film and the chromium film can be removed. Developer: Methyl ethyl ketone (MEK) and methyl
Isobutylene ketone (MIBK) mixture, flow rate: 10
0 cc / min, ambient temperature at the start of development, temperature of spray tip 4 and liquid temperature: 30 ° C, development time: 30 seconds.

After such a two-step development process, the spin chuck 3 is rotated at 1,200 rpm, and a rinse liquid of a mixed liquid of methyl isobutylene ketone (MIBK) and isopropyl alcohol (IPA) is sprayed from the spray tip 6.
The substrate is cleaned by spraying for 30 seconds.

In the dropping developing apparatus used for the development by the dropping method of the present invention, the substrate 7 is spin chuck 13 as shown in FIG.
The spin chuck 13 is rotatable and the upper portion of the spin chuck 13 is a nozzle 14 for dropping a developing solution having a low dissolving ability, a nozzle 15 for dropping a developing solution having a high dissolving ability, and a nozzle 15 after development. A nozzle 16 for dropping a rinse liquid for cleaning the substrate 7 is provided, the periphery of the substrate 7 is surrounded by a developing cup 12 as shown in the drawing, and the developing liquid sprayed on the surface of the substrate 7 is rotated. The developer that has been scattered around and adhered to the inner wall of the developing cup 12 flows down and is discharged from the lower liquid outlet 12b. An exhaust port 12a is provided below the developing cup 12,
The air inside 12 is exhausted.

When developing with such a dropping developing device, first, the substrate 7 is vacuum-adsorbed on the surface of the spin chuck 13, and while the spin chuck 13 is rotated, a developing solution having a low dissolving performance is developed from the nozzle 14 while rotating. After the completion of the development, a developing solution having a high dissolution performance is dropped from the nozzle 15 to perform the development, and after the completion of the development, a rinse solution is dropped from the nozzle 16 to perform cleaning.

The results of the development of the second embodiment by the spray developing device and the results of the development by the conventional spray developing device are compared with each other, and a plate thickness of 0.09 inch (2.3
(mm) substrate 7 with resist film 8 having a film thickness of 5,000 Å formed on the surface of resist film 8 with 6 types of square patterns of 5,6,7,8,9,10 μm, 100,000 pieces each, By comparing the number of defects on five substrates by electron beam exposure with a reticle formed with a total of 600,000, it is possible to significantly reduce the number as shown in Table 1 below.

[0029]

[Table 1]

[0030]

As is apparent from the above description, by using the developing device of the present invention having a very simple structure change, the chromium film is wet-etched by the resist pattern developed by the developing method of the present invention. It is possible to provide a developing method and a developing device which have an advantage that the number of defects can be remarkably reduced, and which can be expected to have a remarkable economic effect and reliability improvement effect.

[Brief description of drawings]

FIG. 1 is a diagram showing a developing device according to a first embodiment of the present invention,

FIG. 2 is a diagram showing a developing device according to a second embodiment of the present invention,

FIG. 3 is a diagram showing a developing device according to a third embodiment of the present invention,

FIG. 4 is a view showing a conventional developing tank,

FIG. 5 is a view showing a conventional spray developing device,

FIG. 6 is a diagram showing a conventional dropping developing device,

FIG. 7 is a diagram showing a problem of a developing method when adhesion between a conventional resist film and a chromium film is low,

FIG. 8 is a diagram showing a problem of the developing method when the adhesion between the conventional resist film and the chromium film is high,

[Explanation of symbols]

1 is a developing tank, 1a is a developer supply port, 1b is a developer supply port, 1c is the developer outlet, 2 and 12 are development cups, 2a and 12a are exhaust ports, 2b and 12b are drainage ports, 3,13 is a spin chuck, 4 is a spray tip, 5 is a spray tip, 6 is a spray tip, 7 is a substrate 8 is a resist film, 9 is a chrome film, 14 is a nozzle, 15 is a nozzle, 16 is a nozzle,

Claims (6)

[Claims] 1. A weak development treatment with low dissolution performance, which is performed in the first half of the development process of the resist film (8) in the development process of developing the resist film (8) formed on the surface of the substrate (7). And a strong developing treatment having a high dissolution performance, which is carried out in the latter half of the developing treatment of the resist film (8). 2. The developing method according to claim 1, wherein the same developing solution is used, and a developing solution having a liquid temperature higher than that of the developing solution used for the weak developing process is used for the strong developing process. And a developing method. 3. The developing method according to claim 1, wherein a developing solution having a solubility higher than that of the developer used in the weak developing process is used in the strong developing process. . 4. A developing device for performing the dip development of the resist film (8) by the developing method according to claim 1, wherein the developing solution supply port (1a) for the developing solution used in the first half step is provided in the developing device. A developing tank provided on the side wall and provided with a developing solution supply port (1b) for the developing solution used in the latter half of the step on the other side wall of the developing device.
A developing device comprising (1). 5. A developing device for spray-developing the resist film (8) by the developing method according to claim 1, wherein a spin chuck (7) mounted with a substrate (7) provided in the center of a developing cup (2). 3), a spray tip (4) of the developer used in the first half step provided above, and a spray tip (5) of the developer used in the second half step provided above. And developing device. 6. A developing device for performing the drop development of the resist film (8) by the developing method according to claim 1, wherein a spin chuck (1) equipped with a substrate (7) provided in the center of a developing cup (12) is provided. 13), a developing solution nozzle (14) provided in the first half step provided above, and a developing solution nozzle (15) provided in the second half step provided above. Development device.