JPH05339734A - Apparatus for production of semiconductor - Google Patents

Abstract

PURPOSE:To provide the apparatus for production of semiconductors which lessens the sticking of a reactional product to a sample holding base and the inside of a sample chamber. CONSTITUTION:The apparatus for production of semiconductors equipped with the sample holding base 17 for placing a sample in the sample chamber and equipped with a jig 18 for introducing gases near the sample holding base 17 is constituted by forming the jig 18 for introducing the gases to a three-layered shape, forming an introducing port 18b for the reactive gases in a central layer and forming introducing ports 18a, 18c for inert gases on the upper and lower layers holding the central layer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus provided with a sample holder for mounting a sample in a sample chamber and a gas introducing jig near the sample holder. Regarding

[0002]

2. Description of the Related Art FIG. 4 is a sectional view showing the vicinity of a sample holder 30 in a plasma CVD (Chemical Vapor Deposion) apparatus as a conventional semiconductor manufacturing apparatus. The sample holder 30 is configured such that the sample 31 is placed on the insulating layer 32 having the electrode layer 33, and the electrode rod 34 is provided on the electrode layer 33.
Are connected.

A gas introducing jig 36 is arranged around the sample holder 30, and the gas introducing jig 36 is provided with a sample 3
1 is formed with a recessed reactive gas inlet 36a at a position where the reactive gas can be directly injected to the nozzle 1. The reactive gas inlet 36a has a reactive gas inlet pipe 36a.
b is connected. Sample holder 30 and gas introduction jig 3
An exhaust passage 35 is formed between the exhaust passage 35 and the nozzle 6.

In the semiconductor manufacturing apparatus configured as described above, when performing a film forming process of SiO ₂ , a voltage is applied to the electrode layer 33 through the electrode rod 34, and the sample 31 is sampled by the electrostatic chuck method. After adsorbing on the table 30, the reactive gas introducing pipe 3
SiH ₄ as a reactive gas is jetted to the sample 31 side from the reactive gas inlet 36a via 6b. SiH ₄ as this reactive gas and sample 31 by means not shown.
On the sample 31 by the O ₂ plasma generated above the SiO ₂
Film forming process is performed.

However, when the film formation process is performed by using the above apparatus, the SiH ₄ gas diffuses not only on the sample 31 but also on the periphery thereof, so that not only on the sample 31 but also on a place other than the sample 31, particularly in the reactivity. Around gas inlet 36a and exhaust path 35
The reaction products adhered to the peripheral portion of the sample holder 30 and the sample chamber wall (not shown), and many particles were generated, which reduced the semiconductor yield.

In order to solve the above-mentioned problem, an apparatus for introducing an inert gas into the vicinity of the sample in a parallel plate type apparatus has been proposed. FIG. 5 shows the periphery of the sample holder of this kind of semiconductor manufacturing apparatus. In the figure, reference numeral 40 denotes a sample holder, which is an insulating layer 42 having an electrode layer 43.
The sample 41 is placed on the electrode layer 43.
An electrode rod 44 is connected to.

An inert gas introducing pipe 48 is formed on the sample holder 40 so that the inert gas can be supplied to the sample 41 from the outer circumference thereof. The inert gas introducing pipe 48 contains the inert gas in the sample 41. Groove 49 so that it can be diffused near the outer periphery
It is connected to the. On the other hand, a shower head 47 is arranged above the sample 41 so that the reaction gas can be injected and the high frequency power can be applied onto the sample 41.

In the semiconductor manufacturing apparatus configured as described above, when performing a film forming process of SiO ₂ , a voltage is applied to the electrode layer 43 through the electrode rod 44, and the sample 41 is sampled by the electrostatic chuck method. After being adsorbed on the table 40, the reactive gas introducing pipe 4
From step 7, SiH ₄ and O ₂ as reactive gases are sprayed onto the sample 41. At the same time, Ar, which is an inert gas, is jetted toward the sample 41 from the inert gas introducing pipe 48. Then, high frequency power is supplied to the shower head 47 to generate plasma, and a film forming process is performed on the sample 41. At this time, the reactive gas is converted into a reaction product by the inert gas Ar as the sample 41.
It is prevented from adhering to places other than the necessary places such as the periphery.

[0009]

In the film forming process using the inert gas in the above-mentioned semiconductor manufacturing apparatus, since the inert gas is blown from the outer periphery of the sample 41 toward the sample 41, the vicinity of the outer periphery of the sample 41 is reduced. Although the reaction products rarely adhere to the place, since the reactive gas is introduced from above the sample 41, the reactive gas does not reach the inert gas.
1 There was a problem that the particles were diffused to a place other than the vicinity of the outer periphery of the sample 41, and the reaction product adhered to a place other than the vicinity of the outer periphery of the sample 41 to generate particles.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus in which reaction products are extremely unlikely to adhere to the sample holder and the sample chamber.

[0011]

In order to achieve the above-mentioned object, a semiconductor manufacturing apparatus according to the present invention is provided with a sample holder for mounting a sample in a sample chamber, and a gas holder for introducing gas near the sample holder. In a semiconductor manufacturing apparatus equipped with a jig, the gas introduction ports of the gas introduction jig are formed in three layers, a reactive gas introduction port is formed in a central layer, and upper and lower layers sandwiching the central layer are formed. It is characterized in that an inert gas inlet is formed.

[0012]

According to the above apparatus, the gas introducing jig is formed in three layers, the reactive gas introducing port is formed in the central layer, and the inert gas is introduced in the upper and lower layers sandwiching the central layer. Since the mouth is formed, the reactive gas is sandwiched between the upper and lower inert gas layers to form a laminar flow, diffuses over the sample, and the desired film formation process is efficiently performed on the sample. Further, since the reactive gas is prevented from diffusing to other than on the sample, it is possible to reduce the generation of particles on the sample holder and the sample chamber.

[0013]

[Examples and Comparative Examples] Hereinafter, electron cyclotron resonance (Electron Cyclotron Resonance) as a semiconductor manufacturing apparatus according to the present invention will be described.
On Resonance) An example of a plasma CVD apparatus will be described with reference to the drawings.

FIG. 1 is a sectional view showing a plasma CVD apparatus according to an embodiment, and 11 in the drawing shows a plasma generation chamber.

The peripheral wall of the plasma generating chamber 11 has a double structure, the inside of which is a cooling chamber 15 through which cooling water flows, and the central portion of the upper wall is sealed with a quartz glass plate 11b. Further, a microwave introduction port 11c is formed, and a plasma extraction window 11d is formed at a position facing the microwave introduction port 11c in the central portion of the lower wall. The microwave introduction port 11c is connected to one end of a waveguide 12 whose other end is connected to a microwave oscillator (not shown), and a sample chamber 13 is provided so as to face the plasma extraction window 11d. Further, an exciting coil 14 is arranged concentrically with the plasma generation chamber 11 and the waveguide 12 connected to the plasma generation chamber 11 so as to surround the plasma generation chamber 11 and one end thereof.

On the other hand, a sample holder 17 is disposed in the sample chamber 13 at a position facing the plasma extraction window 11d, and a sample 16 such as a wafer can be attached to and detached from the sample holder 17 by means of electrostatic adsorption or the like. A gas introduction jig 18 is arranged around the sample holder 17. Sample room 1
An exhaust port 19a that is connected to an exhaust device (not shown) is formed in the lower wall of 3.

Further, in the figure, 11a indicates a gas supply pipe connected to the plasma generation chamber 11, and 15a and 15b indicate cooling water supply pipes and discharge pipes.

FIG. 2 is an enlarged sectional view schematically showing the gas introducing jig 18 and the sample holder 17. Sample holder 1
In Sample No. 7, the sample 16 is placed on the insulating layer 22 having the electrode layer 23, and the electrode rod 24 is connected to the electrode layer 23.

A gas introduction jig 18 is arranged around the sample holder 17 with an exhaust passage 19b interposed therebetween. The gas introduction jig 18 has three gas introduction ports formed in upper and lower layers. Is an inert gas inlet 1 for introducing Ar, which is an inert gas.
8a and 18c are formed, and a reaction gas introduction port 18b for introducing SiH ₄ which is a reaction gas is formed in the central layer. Further, a partition plate 18d is formed between each of the three layers, and each of the gases flowing out from the inert gas introduction ports 18a and 18c and the reaction gas introduction port 18b forms a laminar flow and flows on the sample 16. ing.

A film forming process using the semiconductor manufacturing apparatus configured as described above is performed as follows. First, the sample 16 is placed on the sample holder 17, and then the plasma generation chamber 11 and the sample chamber 13 are exhausted to a predetermined pressure. Next, O ₂ is supplied from the gas supply pipe 11a into the plasma generation chamber 11,
Reactive gas introduction port 1 of gas introduction jig 18 in sample chamber 13
SiH ₄ was introduced onto the sample 16 from 8b, and the inert gas inlet 1
Ar, which is an inert gas, is introduced toward the sample 16 from 8a and 18c. As a result, the sample 16 in a laminar flow state in which the reactive gas SiH ₄ is sandwiched by the inert gas Ar
Supplied on. In addition, cooling water is supplied to the cooling chamber 15 through the supply port 1
Supply from 5a. Then, a direct current is passed through the exciting coil 14 to generate a magnetic field required for electron cyclotron resonance in the plasma generation chamber 11, and then microwaves are introduced from the waveguide 12 into the plasma generation chamber 11 to generate plasma. The SiO ₂ film is formed on the sample 16.

FIG. 3 is a graph showing the relationship between the total deposited film thickness on the sample 16 and the particle density of the sample 16. The circles in FIG. 3 indicate the introduction of the conventional reaction gas single hole shown in FIG. The case where the film forming process is performed without using the inert gas by using the semiconductor manufacturing apparatus of the formula is shown as a comparative example, and the solid circles in FIG. 3 indicate the film forming process using the semiconductor manufacturing apparatus according to the above-mentioned embodiment. Is shown. The film forming conditions are as follows: microwave power 2.5 kW, O ₂ flow rate 81 sccm, S
iH ₄ flow rate 54 sccm, gas pressure 1.7 mTorr
The flow rate of r and Ar was set to 20 sccm. In the case of the comparative example using the semiconductor manufacturing apparatus in which only the reaction gas is introduced, FIG.
As shown in (1), the tendency of increasing the particle density is remarkably exhibited at a total deposition film thickness of about 30 μm. On the other hand, when the reactive gas is introduced into the vicinity of the sample 16 by using the semiconductor manufacturing apparatus according to the embodiment, when the inert gas is introduced into the upper and lower layers of the reactive gas at the same time, as shown in FIG.
Even when the total deposited film thickness is reached, almost no increase in particle density is seen, and it is understood that the particle density is reduced to about 1/10 of that in the comparative example. The deposition rate was 6000 Å / min in the case of the comparative example, whereas it was 8000 Å / min in the case of the example. By doing so, the deposition rate could also be increased. The refractive index of the formed SiO ₂ film was 1.47, which was the same value in both Comparative Example and Example.

Therefore, when the film forming process is performed by using the apparatus according to the above-mentioned embodiment, the reactive gas layer at the center can be diffused on the sample in the laminar flow state by the upper and lower inert gas layers. It is possible to effectively utilize and to perform an efficient desired film forming process. Further, it is possible to suppress the reaction products from adhering to the sample holder and the sample chamber, and to suppress the generation of particles in the sample.

Although the above embodiment shows the case where the present invention is applied to the CVD, the present invention is not limited to the CVD apparatus and can be widely applied to semiconductor devices such as an etching apparatus.

[0024]

As is apparent from the above description, in the semiconductor manufacturing apparatus according to the present invention, the sample chamber is provided with the sample holder for mounting the sample, and the sample holder is provided near the sample holder for introducing gas. In a semiconductor manufacturing apparatus equipped with a jig, the gas introduction ports of the gas introduction jig are formed in three layers, a reactive gas introduction port is formed in a central layer, and upper and lower layers sandwiching the central layer are formed. Since the inlet for the inert gas is formed, the reactive gas can be diffused on the sample in a laminar flow state by the upper and lower inert gas layers, and the reactive gas can be effectively used to A desired film forming process can be efficiently performed. Further, it is possible to suppress the adhesion of the reaction product to the sample holder and the sample chamber and reduce the generation of particles.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of an embodiment of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is an enlarged sectional view schematically showing a gas introduction jig and a sample holder.

FIG. 3 is a graph showing a relationship between a total deposition film thickness and a particle density in the present invention and a comparative example.

FIG. 4 is a sectional view schematically showing a sample holder and a gas introduction jig of a conventional semiconductor manufacturing apparatus.

FIG. 5 is a cross-sectional view schematically showing a sample holder and a gas introduction jig of another conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

 13 sample chamber 17 sample holder 18 gas introducing jig 18a, 18c inert gas inlet 18b reactive gas inlet

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tomomi Murakami 1-3-1 Otemachi, Chiyoda-ku, Tokyo Sumitomo Metal Industries, Ltd.

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus comprising a sample holder for mounting a sample in a sample chamber and a gas introduction jig near the sample holder, wherein a gas introduction port of the gas introduction jig is provided. Is formed in three layers, a reactive gas inlet is formed in the central layer, and an inert gas inlet is formed in upper and lower layers sandwiching the central layer.