JPH05332253A - Vacuum generating device - Google Patents

Vacuum generating device

Info

Publication number
JPH05332253A
JPH05332253A JP14390692A JP14390692A JPH05332253A JP H05332253 A JPH05332253 A JP H05332253A JP 14390692 A JP14390692 A JP 14390692A JP 14390692 A JP14390692 A JP 14390692A JP H05332253 A JPH05332253 A JP H05332253A
Authority
JP
Japan
Prior art keywords
vacuum
main chamber
chamber
sub
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14390692A
Other languages
Japanese (ja)
Inventor
Tetsuya Okumoto
哲也 奥本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14390692A priority Critical patent/JPH05332253A/en
Publication of JPH05332253A publication Critical patent/JPH05332253A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To generate a high vacuum in a short time in a main chamber closed under the atmospheric pressure. CONSTITUTION:A plurality of auxiliary chambers 3, 4, and 5 are connected in juxtaposition on the suction side of a vacuum pump 2. The auxiliary chambers 3, 4, and 5 connected to a main chamber 1, being an object brought into a vacuum, through communicating pipes 30, 40, and 50, respectively, and on-off cocks 3a, 4a, and 5a are arranged in the middle of the communicating pipes 30, 40, and 50, respectively. The interior of each of the auxiliary chambers 3, 4, and 5 is exhausted with the aid of a vacuum pump and maintained at a constantly high vacuum. When a high vacuum is generated in the main chamber 1 closed under an atmospheric pressure, on-off cocks 3a, 4a, and 5a are released, in order, and an internal pressure in the main chamber 1 is reduced in stages through communication of it with the auxiliary chambers 3, 4, and 5.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、大気圧下にて密閉され
た主室の内部に速やかに高真空を形成する装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for rapidly forming a high vacuum inside a main chamber which is closed under atmospheric pressure.

【0002】[0002]

【従来の技術】半導体の製造においては、被処理物たる
ウエハを処理室に導入し、該処理室の内部を高真空に維
持した状態で各種の成膜処理が行われるが、このような
成膜処理の高能率化を図るためには、ウエハの搬出,搬
入に際して大気に開放される前記処理室の内部を速やか
に高真空状態に復帰させることが重要である。
2. Description of the Related Art In the manufacture of semiconductors, a wafer, which is an object to be processed, is introduced into a processing chamber, and various film forming processes are carried out while maintaining a high vacuum inside the processing chamber. In order to improve the efficiency of film processing, it is important to quickly return the inside of the processing chamber, which is exposed to the atmosphere, to a high vacuum state when carrying out and carrying in a wafer.

【0003】そこで従来から、前記処理室の一側に開閉
可能なゲートを介して小容積の気圧調整室を連設し、該
気圧調整室を処理室と共に真空ポンプに接続してなり、
処理済ウエハの搬出及び未処理ウエハの搬入に際して
は、前記ゲートの閉止により処理室との連通を遮断され
た気圧調整室を大気に開放し、ウエハの搬出及び搬入の
後に密閉して真空ポンプにより排気し、所定の真空度に
達した時点で前記ゲートを開放して、気圧調整室から処
理室へウエハを移送して所定の処理を行わせる構成とし
た半導体製造装置が用いられている。即ちこの装置によ
れば、大気への開放及び真空状態への復帰が小容積の気
圧調整室において行われ、大容積の処理室は常時高真空
状態に保たれることから、ウエハの搬出,搬入に要する
時間が短縮でき、高能率での処理が可能となる。
Therefore, conventionally, a small-volume air pressure adjusting chamber is connected to one side of the processing chamber via an openable / closable gate, and the air pressure adjusting chamber is connected to a vacuum pump together with the processing chamber.
At the time of unloading processed wafers and loading unprocessed wafers, the air pressure control chamber, which is cut off from the communication with the processing chamber by closing the gate, is opened to the atmosphere, and after unloading and loading the wafer, it is hermetically closed by a vacuum pump. There is used a semiconductor manufacturing apparatus configured to evacuate and open the gate when a predetermined degree of vacuum is reached to transfer a wafer from an atmospheric pressure adjusting chamber to a processing chamber to perform a predetermined processing. That is, according to this apparatus, since opening to the atmosphere and returning to the vacuum state are performed in the small-volume atmospheric pressure adjusting chamber, and the large-volume processing chamber is always kept in the high vacuum state, the wafer is unloaded and loaded. The time required for processing can be shortened, and highly efficient processing becomes possible.

【0004】[0004]

【発明が解決しようとする課題】さて、以上の如き構成
の半導体製造装置においては、処理能率の更なる向上を
図るべく、ウエハの搬出,搬入の後における気圧調整室
の内圧を高真空状態に復帰させるのに要する時間を短縮
することが重要な課題となっている。また、半導体の製
造のみならず多くの産業分野においても同様に、大気圧
下にて密閉された室の内部に速やかに高真空を形成する
装置の開発が望まれている。
In the semiconductor manufacturing apparatus having the above-mentioned structure, the internal pressure of the atmospheric pressure adjusting chamber after carrying out and carrying in the wafer is set to a high vacuum state in order to further improve the processing efficiency. It is an important issue to reduce the time required for restoration. Further, not only in the manufacture of semiconductors but also in many industrial fields, similarly, there is a demand for the development of an apparatus that quickly forms a high vacuum inside a sealed chamber under atmospheric pressure.

【0005】従来の真空形成装置は、前述した半導体製
造装置における気圧調整室の如く、対象となる主室を真
空ポンプの吸込側に接続し、該真空ポンプでの排気によ
り主室内に高真空を得る構成となっている。図5は、大
気圧(1気圧)下にて密閉された主室を真空ポンプによ
り排気する場合における真空度の経時的な変化の様子を
示すグラフである。本図に明らかな如く従来の真空形成
装置においては、初期には真空度が急増するが、時間の
経過と共に増加程度が緩やかとなり、図中に一点鎖線に
て示す絶対真空に漸近する変化態様を示すことから、半
導体製造装置における気圧調整室の如く、絶対真空に近
い高真空を得ようとする場合、主室の内部に目標となる
高真空が形成されるまでに多大の時間を要する難点があ
る。
In the conventional vacuum forming apparatus, a target main chamber is connected to the suction side of a vacuum pump, such as the pressure adjusting chamber in the semiconductor manufacturing apparatus described above, and a high vacuum is created in the main chamber by exhausting the vacuum pump. It is configured to get. FIG. 5 is a graph showing how the degree of vacuum changes with time when the main chamber closed under atmospheric pressure (1 atm) is evacuated by a vacuum pump. As is clear from this figure, in the conventional vacuum forming apparatus, the degree of vacuum sharply increases in the initial stage, but the degree of increase gradually decreases with the passage of time, and the change mode is gradually changed to the absolute vacuum indicated by the one-dot chain line in the figure. As shown in the figure, when trying to obtain a high vacuum close to an absolute vacuum like a pressure adjusting chamber in a semiconductor manufacturing apparatus, it takes a lot of time until a target high vacuum is formed inside the main chamber. is there.

【0006】なお、前記所要時間の短縮は、主室の内容
積に比して十分に大きい排気容量を有する真空ポンプを
用いることにより達成されるが、これは、真空ポンプの
大型化に伴う設備コスト及び運転コストの増加を招来す
ることから、好ましい方法ではない。
The shortening of the required time can be achieved by using a vacuum pump having a sufficiently large exhaust capacity as compared with the internal volume of the main chamber. This is not a preferable method because it causes an increase in cost and operating cost.

【0007】本発明は斯かる事情に鑑みてなされたもの
であり、大気圧下において密閉された主室の内部に短時
間にて高真空を形成し得る真空形成装置を提供すること
を目的とする。
The present invention has been made in view of the above circumstances, and an object thereof is to provide a vacuum forming apparatus capable of forming a high vacuum in a short time inside a main chamber which is closed under atmospheric pressure. To do.

【0008】[0008]

【課題を解決するための手段】本発明に係る真空形成装
置は、真空ポンプの吸込側に複数の副室を並列に接続
し、これらの夫々を連通管を介して主室に連通する一
方、各連通管の中途に開閉手段を設けたものである。
In the vacuum forming apparatus according to the present invention, a plurality of sub-chambers are connected in parallel on the suction side of a vacuum pump, and each of these sub-chambers is connected to a main chamber via a communication pipe. An opening / closing means is provided in the middle of each communication pipe.

【0009】[0009]

【作用】本発明においては、真空ポンプでの排気により
複数の副室を常時高真空状態に維持しておき、大気圧下
にて密閉された主室の内部に真空を形成する場合、この
主室と複数の副室とを、両室を結ぶ連通管中途の開閉手
段の開放により順次連通させ、各副室内の高真空を主室
に導入する。またこの後は開閉手段を閉止し、次なる真
空形成に備えるべく、主室と隔絶された状態で副室の排
気を継続する。
In the present invention, when a plurality of sub-chambers are constantly maintained in a high vacuum state by exhausting with a vacuum pump and a vacuum is formed inside the sealed main chamber under atmospheric pressure, this main chamber is used. The chamber and the plurality of sub-chambers are sequentially connected by opening the opening / closing means in the middle of the communication pipe connecting the chambers, and a high vacuum in each sub-chamber is introduced into the main chamber. After this, the opening / closing means is closed, and the evacuation of the sub chamber is continued while being isolated from the main chamber in preparation for the next vacuum formation.

【0010】[0010]

【実施例】以下本発明をその実施例を示す図面に基づい
て詳述する。図1は本発明に係る真空形成装置の一実施
例を示す模式図である。図中1は、真空形成の対象とな
る主室であり、一側に付設された扉10の閉止による外気
からの密閉と、開放による外気との連通とが可能に構成
されている。また主室1は、真空源となる真空ポンプ2
の吸込側に排気管20を介して接続されており、前記扉10
を閉止し、排気管20の中途に配した排気弁 20aを開放す
ることにより、真空ポンプ2による排気が行われるよう
になしてある。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings showing the embodiments. FIG. 1 is a schematic view showing an embodiment of the vacuum forming apparatus according to the present invention. In the figure, reference numeral 1 denotes a main chamber which is a target of vacuum formation, and is configured to be closed from the outside air by closing a door 10 attached to one side and open to communicate with the outside air. Further, the main chamber 1 has a vacuum pump 2 which serves as a vacuum source.
Is connected to the suction side of the exhaust pipe 20 via the exhaust pipe 20,
Is closed, and the exhaust valve 20a arranged in the middle of the exhaust pipe 20 is opened, so that the vacuum pump 2 performs exhaust.

【0011】また真空ポンプ2の吸込側には、複数(図
においては3つ)の副室3,4,5が各別の排気管21,
22,23を介して接続してあり、各排気管21,22,23の中
途に夫々配された排気弁 21a,22a,23aを開放することに
より、前記真空ポンプ2による副室3,4,5の排気が
行われるようになしてある。
On the suction side of the vacuum pump 2, a plurality (three in the figure) of sub-chambers 3, 4, 5 are provided for the exhaust pipes 21, respectively.
The sub-chambers 3, 4, by the vacuum pump 2 are opened by opening the exhaust valves 21a, 22a, 23a, which are connected to each other via the exhaust pipes 22, 23, and are arranged in the middle of the exhaust pipes 21, 22, 23, respectively. 5 is exhausted.

【0012】前記副室3,4,5と主室1とは、各別の
連通管30,40,50を介して接続されている。これらの連
通管30,40,50の中途には夫々開閉コック3a,4a,5aが
介装されており、主室1は、開閉コック3aの開操作によ
り副室3に、また開閉コック4aの開操作により副室4
に、更に開閉コック5aの開操作により副室5に夫々連通
されるようになしてある。
The sub-chambers 3, 4, 5 and the main chamber 1 are connected via separate communication pipes 30, 40, 50. Opening / closing cocks 3a, 4a, 5a are provided in the middle of these communication pipes 30, 40, 50, respectively, and the main chamber 1 is moved to the sub chamber 3 by the opening operation of the opening / closing cock 3a and to the opening / closing cock 4a. Sub-chamber 4 by opening operation
In addition, the sub-chambers 5 are communicated with each other by opening the opening / closing cock 5a.

【0013】以上の如く構成された真空形成装置におい
て、排気管21,22,23の中途に配された排気弁 21a,22
a,23aは常時開放され、真空ポンプ2による副室3,
4,5の真空排気は継続的に行われており、また連通管
30,40,50の中途に配された開閉コック3a,4a,5aは常
時閉止され、副室3,4,5の内部は、主室1と遮断さ
れた状態で高真空に維持されている。
In the vacuum forming apparatus constructed as described above, the exhaust valves 21a, 22 arranged in the middle of the exhaust pipes 21, 22, 23
a and 23a are always open, and the auxiliary chamber 3 by the vacuum pump 2 is
The vacuum exhaust of 4 and 5 is continuously performed, and the communication pipe
The opening / closing cocks 3a, 4a, 5a arranged in the middle of 30, 40, 50 are always closed, and the insides of the sub-chambers 3, 4, 5 are maintained at a high vacuum in a state of being cut off from the main chamber 1. ..

【0014】一方主室1においては、図中に破線にて示
す如く扉10を開放し、真空下での処理を必要とする被処
理物を内部に搬入された後、扉10を閉止して大気圧下に
て密閉され、前記処理に必要な高真空を得るべく真空形
成が行われる。
On the other hand, in the main chamber 1, the door 10 is opened as shown by the broken line in the figure, and after the object to be processed which requires processing under vacuum is carried into the inside, the door 10 is closed. It is sealed under atmospheric pressure and vacuum formed to obtain the high vacuum required for the process.

【0015】この真空形成に際しては、まず、排気管20
の中途に配された排気弁 20aを開放し、真空ポンプ2に
よる直接的な排気を実行する。この排気は、比較的低い
所定の真空度に達した時点において終了し、その後は、
排気弁 20aを閉止して主室1と真空ポンプ2との接続を
断ち、次いで、連通管30の中途に配された開閉コック3a
を開放する。この開放により主室1は、連通管30を介し
て副室3に連通されるが、このとき副室3の内部は前述
の如く高真空状態にあるから、主室1内部の真空度は瞬
時に増すことになる。
In forming the vacuum, first, the exhaust pipe 20
The exhaust valve 20a arranged in the middle is opened, and the vacuum pump 2 directly executes the exhaust. The evacuation ends when a relatively low predetermined vacuum level is reached, and thereafter,
The exhaust valve 20a is closed to disconnect the connection between the main chamber 1 and the vacuum pump 2, and then the opening / closing cock 3a arranged in the middle of the communication pipe 30.
Open up. Due to this opening, the main chamber 1 is communicated with the sub chamber 3 through the communication pipe 30. At this time, since the interior of the sub chamber 3 is in a high vacuum state as described above, the degree of vacuum inside the main chamber 1 is instantaneous. Will be increased.

【0016】主室1の内圧が安定した後、開閉コック3a
を閉止して主室1と副室3との連通を遮断し、次いで連
通管40中途の開閉コック4aを開放する。この開放により
主室1は、連通管40を介して副室4に連通されるが、こ
のとき副室4の内部の真空度は主室1内部のそれよりも
高いことから、主室1内部の真空度は、前記開放と共に
更に増すことになる。
After the internal pressure of the main chamber 1 is stabilized, the opening / closing cock 3a
To close the communication between the main chamber 1 and the sub chamber 3, and then open the opening / closing cock 4a in the middle of the communication pipe 40. Due to this opening, the main chamber 1 is communicated with the sub chamber 4 through the communication pipe 40. At this time, since the degree of vacuum inside the sub chamber 4 is higher than that inside the main chamber 1, the inside of the main chamber 1 is The degree of vacuum of will increase further with the opening.

【0017】最後に、開閉コック4aを閉止して主室1と
副室4との連通を遮断し、連通管50中途の開閉コック
5aを開放する。この開放により主室1は、更に高い真
空度を有する副室5に連通管50を介して連通されること
になり、主室1内部の真空度は、前記開放と共に更に増
す。
Finally, the opening / closing cock 4a is closed to cut off the communication between the main chamber 1 and the sub chamber 4, and the opening / closing cock 5a in the middle of the communication pipe 50 is opened. Due to this opening, the main chamber 1 is communicated with the sub chamber 5 having a higher degree of vacuum via the communication pipe 50, and the degree of vacuum inside the main chamber 1 further increases with the opening.

【0018】図2は以上の如き真空形成装置における主
室1内部の真空度の経時的な変化の様子を示すグラフで
ある。図示の如く、動作初期における真空ポンプ2によ
る直接的な排気は、主室1内部の真空度の急増域におい
てのみ行われ、その後主室1内部の真空度は、開閉コッ
ク3a,4a,5aの開放に伴う副室3,4,5との連通によ
り、図中に一点鎖線にて示す絶対真空に向けて段階的に
急増しており、高真空状態に達するまでの所要時間は大
幅に短縮される。
FIG. 2 is a graph showing how the degree of vacuum inside the main chamber 1 of the vacuum forming apparatus as described above changes with time. As shown in the figure, the direct evacuation by the vacuum pump 2 in the initial stage of operation is performed only in the region where the degree of vacuum inside the main chamber 1 rapidly increases, and then the degree of vacuum inside the main chamber 1 is reduced by the opening / closing cocks 3a, 4a, 5a. Due to the communication with the sub-chambers 3, 4, and 5 due to the opening, the absolute vacuum shown by the chain line in the figure increases rapidly in stages, and the time required to reach a high vacuum state is greatly shortened. It

【0019】なお、前記連通の後の副室3,4,5にお
いては、開閉コック3a,4a,5aの閉止により主室1と遮
断され、この状態での真空ポンプ2による真空排気が再
開される。これにより副室3,4,5は、主室1の内部
に搬入された被処理物に対し所定の処理が実行されてい
る間に高真空状態に復帰でき、主室1における次なる真
空形成に際して同様の作用を行わせることができる。
In the sub-chambers 3, 4, 5 after the communication, the opening / closing cocks 3a, 4a, 5a are closed to shut off the main chamber 1, and the vacuum pump 2 restarts the vacuum exhaust in this state. It As a result, the sub-chambers 3, 4, and 5 can be returned to the high vacuum state while a predetermined process is being performed on the workpiece carried into the main chamber 1, and the next vacuum formation in the main chamber 1 can be performed. At that time, a similar operation can be performed.

【0020】図3は本発明に係る真空形成装置の他の実
施例を示す模式図である。この真空形成装置は、真空形
成の対象となる主室1よりも十分に大きい内容積を有す
る複数(図においては3つ)の副室3,4,5を備えて
なり、前記主室1は、各別の連通管30,40,50により前
記副室3,4,5に接続されているのみであり、真空ポ
ンプ2の吸込側には接続されていない。
FIG. 3 is a schematic view showing another embodiment of the vacuum forming apparatus according to the present invention. This vacuum forming apparatus comprises a plurality (three in the figure) of sub-chambers 3, 4, 5 having an inner volume sufficiently larger than the main chamber 1 to be vacuum-formed, and the main chamber 1 is , Are connected to the auxiliary chambers 3, 4, and 5 by separate communication pipes 30, 40, and 50, and are not connected to the suction side of the vacuum pump 2.

【0021】以上の如き真空形成装置においてもまた、
排気管21,22,23の中途に配された排気弁 21a,22a,23a
は常時開放され、真空ポンプ2による副室3,4,5の
真空排気は継続的に行われており、また連通管30,40,
50の中途に配された開閉コック3a,4a,5aは常時閉止さ
れ、副室3,4,5の内部は、主室1と遮断された状態
で高真空に維持されている。
Also in the vacuum forming apparatus as described above,
Exhaust valves 21a, 22a, 23a arranged in the middle of the exhaust pipes 21, 22, 23
Is always open, the sub-chambers 3, 4, and 5 are continuously evacuated by the vacuum pump 2, and the communication pipes 30, 40, and
The open / close cocks 3a, 4a, 5a arranged in the middle of 50 are always closed, and the interiors of the sub-chambers 3, 4, 5 are maintained in a high vacuum state while being disconnected from the main chamber 1.

【0022】そして主室1の真空形成に際しては、該主
室1を大気圧下にて密閉した後、連通管30の中途に配さ
れた開閉コック3aを直ちに開放する。この開放により主
室1は、連通管30を介して副室3に連通されることにな
り、このとき副室3の内部は高真空状態にあり、また副
室3の内容積が主室1のそれよりも十分に大きいことか
ら、主室1の内圧は大気圧状態から大きく降圧し、ある
程度の真空度が瞬時に得られる。
When forming a vacuum in the main chamber 1, after closing the main chamber 1 under atmospheric pressure, the opening / closing cock 3a arranged in the middle of the communication pipe 30 is immediately opened. Due to this opening, the main chamber 1 is communicated with the sub chamber 3 through the communication pipe 30, the interior of the sub chamber 3 is in a high vacuum state at this time, and the internal volume of the sub chamber 3 is equal to that of the main chamber 1. Since it is sufficiently larger than that, the internal pressure of the main chamber 1 is greatly reduced from the atmospheric pressure state, and a certain degree of vacuum is instantaneously obtained.

【0023】主室1の内圧が安定した後、開閉コック3a
を閉止して主室1と副室3との連通を遮断し、次いで連
通管40中途の開閉コック4aを開放する。この開放により
主室1は、連通管40を介して副室4に連通されるが、こ
のとき副室4の内部の真空度は主室1内部のそれよりも
高く、また副室4の内容積が主室1のそれよりも十分に
大きいことから、主室1内部には大なる降圧が生じ、主
室1内部の真空度は、前記開放と共に更に増すことにな
る。
After the internal pressure of the main chamber 1 is stabilized, the opening / closing cock 3a
To close the communication between the main chamber 1 and the sub chamber 3, and then open the opening / closing cock 4a in the middle of the communication pipe 40. Due to this opening, the main chamber 1 is communicated with the sub chamber 4 via the communication pipe 40. At this time, the degree of vacuum inside the sub chamber 4 is higher than that inside the main chamber 1, and the contents of the sub chamber 4 are higher. Since the product is sufficiently larger than that of the main chamber 1, a large pressure drop occurs inside the main chamber 1, and the degree of vacuum inside the main chamber 1 further increases with the opening.

【0024】最後に、開閉コック4aを閉止して主室1と
副室4との連通を遮断し、連通管50中途の開閉コック5a
を開放する。この開放により主室1は、更に高い真空度
を有する副室5に連通管50を介して連通されることにな
り、主室1内部の真空度は前記開放と共に更に増す。
Finally, the opening / closing cock 4a is closed to cut off the communication between the main chamber 1 and the sub chamber 4, and the opening / closing cock 5a in the middle of the communication pipe 50 is closed.
Open up. By this opening, the main chamber 1 is communicated with the sub chamber 5 having a higher degree of vacuum through the communication pipe 50, and the degree of vacuum inside the main chamber 1 further increases with the opening.

【0025】即ちこの真空形成装置においては、真空ポ
ンプ2による主室1の直接的な排気は行われず、開閉コ
ック3a,4a,5aの開放による主室1と副室3,4,5と
の連通が直ちに生じることから、主室1内部の真空度
は、図4に示す如く、真空形成動作の開始と共に段階的
に急増し、絶対真空(図中の一点鎖線)に近い高真空域
に達するまでの所要時間は更に短縮される。
That is, in this vacuum forming apparatus, the main chamber 1 is not directly evacuated by the vacuum pump 2, and the main chamber 1 and the sub chambers 3, 4, 5 are opened by opening the opening / closing cocks 3a, 4a, 5a. Since the communication occurs immediately, the degree of vacuum inside the main chamber 1 rapidly increases stepwise with the start of the vacuum forming operation, as shown in FIG. 4, and reaches a high vacuum region close to the absolute vacuum (the one-dot chain line in the figure). The time required to get to is further shortened.

【0026】なおこの真空形成装置においてもまた、前
記連通の後の副室3,4,5は、開閉コック3a,4a,5a
の閉止により主室1と遮断され、真空ポンプ2による真
空排気が再開されるが、このとき、副室3,4,5の内
容積が大きいことから、各室3,4,5の高真空状態へ
の復帰に要する時間は長大化せざるを得ない。即ち図3
に示す構成は、主室1の内部での被処理物の処理時間が
十分に長い場合に適したものであり、処理時間が短い場
合には、図1に示す構成とするのがよい。
Also in this vacuum forming apparatus, the sub-chambers 3, 4 and 5 after the communication are provided with open / close cocks 3a, 4a and 5a.
The main chamber 1 is shut off by the closing of the main chamber 1 and the vacuum exhaust by the vacuum pump 2 is restarted. At this time, since the internal volumes of the sub chambers 3, 4, 5 are large, the high vacuum of each chamber 3, 4, 5 is high. There is no choice but to lengthen the time required to return to the state. That is, FIG.
The configuration shown in (1) is suitable when the processing time of the object to be processed inside the main chamber 1 is sufficiently long, and when the processing time is short, the configuration shown in FIG. 1 is preferable.

【0027】また前記各実施例においては、真空ポンプ
2の吸込側に3つの副室3,4,5を並設したが、副室
の数は3つに限るものではなく、2つ又は4つ以上の副
室を設けてもよいことは言うまでもない。
Further, in each of the above-mentioned embodiments, the three sub-chambers 3, 4, and 5 are arranged in parallel on the suction side of the vacuum pump 2. However, the number of sub-chambers is not limited to three, and two or four sub-chambers may be provided. It goes without saying that more than one sub-chamber may be provided.

【0028】[0028]

【発明の効果】以上詳述した如く本発明に係る真空形成
装置においては、真空ポンプの吸込側に並設した複数の
副室を常時高真空状態に維持しておき、これらの副室の
夫々を中途に開閉手段を備えた連通管を介して主室に連
通させ、大気圧下にて密閉された主室の内部に高真空を
形成する場合、前記開閉手段を順次開放して各副室内の
高真空を主室に導入し、主室内部の真空度を瞬時に増加
せしめるから、主室の内部に短時間にて高真空が得ら
れ、半導体製造における成膜処理等、高真空下での処理
を必要とする各種の処理工程の大幅な時間短縮が実現さ
れる等、本発明は優れた効果を奏する。
As described above in detail, in the vacuum forming apparatus according to the present invention, a plurality of sub-chambers arranged in parallel on the suction side of the vacuum pump are always maintained in a high vacuum state, and each of these sub-chambers is maintained. When a high vacuum is formed inside the main chamber that is closed under atmospheric pressure, the sub-chambers are opened sequentially by connecting the main chamber to the main chamber through a communication pipe equipped with a switching device. High vacuum is introduced into the main chamber and the degree of vacuum inside the main chamber is instantly increased, so a high vacuum can be obtained within the main chamber in a short time, and under high vacuum such as film formation processing in semiconductor manufacturing. The present invention has excellent effects such as a significant reduction in the time required for various processing steps requiring the above processing.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る真空形成装置の一実施例を示す模
式図である。
FIG. 1 is a schematic view showing an example of a vacuum forming apparatus according to the present invention.

【図2】図1の真空形成装置により主室内部に得られる
真空度の経時的な変化の様子を示すグラフである。
FIG. 2 is a graph showing how the degree of vacuum obtained in the main chamber by the vacuum forming apparatus of FIG. 1 changes with time.

【図3】本発明に係る真空形成装置の他の実施例を示す
模式図である。
FIG. 3 is a schematic view showing another embodiment of the vacuum forming apparatus according to the present invention.

【図4】図3の真空形成装置により主室内部に得られる
真空度の経時的な変化の様子を示すグラフである。
FIG. 4 is a graph showing how the degree of vacuum obtained in the main chamber by the vacuum forming apparatus of FIG. 3 changes with time.

【図5】従来の真空形成装置により主室内部に得られる
真空度の経時的な変化の様子を示すグラフである。
FIG. 5 is a graph showing how the degree of vacuum obtained in the main chamber by a conventional vacuum forming apparatus changes with time.

【符号の説明】[Explanation of symbols]

1 主室 2 真空ポンプ 3 副室 4 副室 5 副室 30 連通管 40 連通管 50 連通管 3a 開閉コック 4a 開閉コック 5a 開閉コック 1 Main chamber 2 Vacuum pump 3 Sub chamber 4 Sub chamber 5 Sub chamber 30 Communication pipe 40 Communication pipe 50 Communication pipe 3a Open / close cock 4a Open / close cock 5a Open / close cock

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成4年11月4日[Submission date] November 4, 1992

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0003[Name of item to be corrected] 0003

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0003】そこで従来から、前記処理室の一側に開閉
可能なゲートを介して小容積の気圧調整室を連設し、該
気圧調整室を処理室と共に真空ポンプに接続し、処理済
ウエハの搬出及び未処理ウエハの搬入に際しては、前記
ゲートの閉止により処理室との連通を遮断された気圧調
整室を大気に開放し、ウエハの搬出及び搬入の後に密閉
して真空ポンプにより排気し、所定の真空度に達した時
点で前記ゲートを開放して、気圧調整室から処理室へウ
エハを移送して所定の処理を行わせる構成とした半導体
製造装置が用いられている。即ちこの装置によれば、大
気への開放及び真空状態への復帰が小容積の気圧調整室
において行われ、大容積の処理室は常時高真空状態に保
たれることから、ウエハの搬出,搬入に要する時間が短
縮でき、高能率での処理が可能となる。
Therefore, conventionally, a small-volume atmospheric pressure adjusting chamber is connected to one side of the processing chamber through an openable / closable gate, and the atmospheric pressure adjusting chamber is connected to a vacuum pump together with the processing chamber to process a processed wafer. At the time of unloading and loading of unprocessed wafers, the air pressure control chamber, which is cut off from the communication with the processing chamber by closing the gate, is opened to the atmosphere, and after unloading and loading of the wafer, it is sealed and evacuated by a vacuum pump There is used a semiconductor manufacturing apparatus having a structure in which the gate is opened when the vacuum degree is reached and the wafer is transferred from the atmospheric pressure adjusting chamber to the processing chamber to perform a predetermined processing. That is, according to this apparatus, since opening to the atmosphere and returning to the vacuum state are performed in the small-volume atmospheric pressure adjusting chamber, and the large-volume processing chamber is always kept in the high vacuum state, the wafer is unloaded and loaded. The time required for processing can be shortened, and highly efficient processing becomes possible.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 大気圧下にて密閉された主室を真空ポン
プにより排気し、前記主室の内部に高真空を形成する装
置において、前記真空ポンプの吸込側に並列に接続され
た複数の副室と、これらの副室の夫々を前記主室に連通
する各別の連通管と、各連通管の中途に夫々配された開
閉手段とを具備することを特徴とする真空形成装置。
1. An apparatus for forming a high vacuum inside the main chamber by evacuating a main chamber closed under atmospheric pressure by a vacuum pump, wherein a plurality of vacuum pumps are connected in parallel to the suction side of the vacuum pump. A vacuum forming apparatus comprising: a sub-chamber, a separate communication pipe that communicates each of the sub-chambers with the main chamber, and an opening / closing means arranged in the middle of each communication pipe.
JP14390692A 1992-06-04 1992-06-04 Vacuum generating device Pending JPH05332253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14390692A JPH05332253A (en) 1992-06-04 1992-06-04 Vacuum generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14390692A JPH05332253A (en) 1992-06-04 1992-06-04 Vacuum generating device

Publications (1)

Publication Number Publication Date
JPH05332253A true JPH05332253A (en) 1993-12-14

Family

ID=15349833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14390692A Pending JPH05332253A (en) 1992-06-04 1992-06-04 Vacuum generating device

Country Status (1)

Country Link
JP (1) JPH05332253A (en)

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