JPH053319A - Film type semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To provide a film type semiconductor device having an excellent characteristic. CONSTITUTION:A gate electrode 2, a gate insulation film 3, a semiconductor film 4, an ohmic contact layer, a source electrode 6 and a drain electrode 7 are formed on a substrate 1, and these are protected by a superfine particle film 10 made of an inorganic material. Since superfine particles can be heaped on a semiconductor without a high-temperature treatment or a plasma processing, a film semiconductor device can be produced without thermally affecting a semiconductor or without affecting in terms of charged particles such as plasma, and in addition, a dense protective film can be formed due to an active character of a superfine particle.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film semiconductor device such as a thin film transistor and a thin film transistor type photosensor used for a display, an image scanner and the like, and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, office automation (O
In accordance with A), input / output devices such as displays and image scanners are considered important as man-machine interfaces for OA equipment such as word processors, personal computers, and facsimiles, and are required to be lightweight, thin, and low-priced.

From such a viewpoint, an active matrix type liquid crystal display in which a thin film semiconductor, for example, non-single crystal silicon is formed on a large-area insulating substrate to form a thin film transistor, a photoelectric conversion device in which an optical sensor is formed, and the like. Is being developed.

FIG. 10 shows a conventional thin film transistor (TF).
An example of the structure of T) is shown. A gate electrode 32 is formed on an insulating substrate 31, a gate insulating film 33 is deposited on the gate electrode 32, and as a thin film semiconductor 34 capable of forming a channel,
For example, hydrogenated amorphous silicon or the like is formed.
Further, an n ⁺ layer 35 is provided between the metal electrodes of the source / drain electrodes 36 and 37 and the thin film semiconductor 34 to form a junction which is ohmic for electrons and blocking for holes. As a result, it operates as an n-channel transistor.

In the TFT of FIG. 10, light is irradiated between the source and drain electrodes 36 and 37 to control the distribution of photocarriers generated in the semiconductor layer by the gate electrode to obtain a stable photocurrent. It can also be applied as a thin film transistor type optical sensor.

Further, the thin film semiconductor device such as the thin film transistor and the thin film transistor type sensor can be applied as a thin film semiconductor device having a new function constituted by connecting a plurality of thin film semiconductor devices through source and drain electrodes and gate electrodes.

[0007]

When a thin film semiconductor device such as a thin film transistor as shown in FIG. 10 is actually used as a liquid crystal display or an image reading device for a facsimile, the surface of the thin film semiconductor device has an external atmosphere. Is very susceptible to, if oxygen gas or water vapor directly adsorbs or diffuses on these surfaces,
Since the semiconductor thin film is very thin, its electrical characteristics fluctuate greatly. For this reason, conventionally, the surface of the element is covered with a film made of an organic material such as silicone or polyimide or an inorganic material such as Si ₃ N ₄ or SiO ₂ , but a satisfactory performance or cost is still obtained. Not not.

For example, when an organic material such as polyimide which is relatively permeable to water is used as the protective film, the protective film (passivation film) is made thicker, or an inorganic material such as SiO ₂ is used as the organic material. By making it a composite film by laminating on the above, the water invasion route to the semiconductor thin film layer is maintained for a long time, and the durability of the device portion made of this semiconductor thin film layer is managed somehow. Therefore, the conventional thin-film semiconductor device inevitably becomes large in size, and there is a problem that it is difficult to reduce the cost.

On the other hand, when an inorganic material having low moisture permeability such as Si ₃ N ₄ or SiO _{2 is} used as a protective film (passivation film), damage caused by heat or plasma generated when the protective film is formed. receive. Therefore, trap levels increase at the interface between the protective film and the amorphous silicon forming the semiconductor film, and undesired characteristics such as a reduction in ON / OFF ratio and deterioration of responsiveness are exhibited. Further, many defects such as dangling bonds are generated in the vicinity of the interface between the protective film layer and the semiconductor layer, and not only the TFT characteristics are deteriorated, but also the photocurrent is reduced and the stability is lost. Furthermore, if an attempt is made to increase the temperature of the substrate to form a protective film having excellent moisture resistance, Al of the electrode material and Si of the semiconductor layer will interdiffuse or, for example, phosphorus (P) in the n ⁺ layer will diffuse. , TFT characteristics are abnormal.

As a means for solving the problem, a protective film made of an organic material that does not damage the semiconductor surface and can be applied at a low temperature is formed, and further protection of an inorganic material excellent in moisture resistance is continued. It is conceivable to make a membrane, i.e. to use a two-layer protective membrane structure.

However, when an inorganic material protective film is to be formed on the organic material protective film by a plasma CVD method or the like, impurities (mostly water) released from the organic material protective film in the plasma CVD apparatus. Or hydrocarbon)
Will cause pollution. In addition, when the inorganic protective film is formed on the organic protective film, the formation temperature of the inorganic protective film is set to 150.
Must be below ℃. Normally, by plasma CVD or the like, Si ₃ N ₄ ,
When a protective film such as SiO ₂ is formed, the denseness of the film structure is lost and the moisture resistance of the protective film becomes insufficient.

The present invention has been made in view of the above problems, and in terms of reliability and stability, it is possible to sufficiently guarantee the characteristics and performance in a more severe environment, and to improve the performance of the thin film semiconductor layer. An object of the present invention is to provide a thin film semiconductor device that can be sufficiently pulled out.

[0013]

According to the present invention, in order to achieve the above object, a thin film semiconductor device having at least a semiconductor layer and an electrode layer and having a structure in which these are protected by a protective film is provided. Provided is a thin-film semiconductor device, wherein the protective film is an ultrafine particle film of an inorganic material.

Here, the semiconductor layer and the electrode layer may be formed on an insulating substrate, and a protective film may be formed on the semiconductor layer and the electrode layer. In addition, non-single crystal silicon can be used as the semiconductor layer.

Further, according to the present invention, in order to achieve the above object, there is provided a method for manufacturing the above-mentioned thin film semiconductor device, wherein the ultrafine particle film is directly adhered with oxide or nitride ultrafine particles. A method for manufacturing a thin film semiconductor device, characterized by being created by the method, and a method for manufacturing the thin film semiconductor device, wherein the ultrafine particle film comprises:
Manufacture of a thin film semiconductor device characterized in that an ultrafine particle film of an unoxidized and unnitrided inorganic material is formed in advance, and then the ultrafine particle film of an unoxidized and unnitrided inorganic material is oxidized or nitrided. A method is provided.

As described above, by using the ultrafine particle film as the protective film for the semiconductor film, or by using the film obtained by oxidizing or nitriding the ultrafine particle film as the protective film, a TFT, a TFT type optical sensor or the like can be obtained. A protective film made of an inorganic material can be formed without impairing the performance of the thin film semiconductor layer.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION The ultrafine particle film used as the protective film of the present invention is formed by depositing ultrafine particles having a particle size in the range of 10Å to 1000Å in a film form. Desirably, an ultrafine particle film having a filling rate of ultrafine particles of 50% or more, which is excellent in strength and adhesion to a substrate or another thin film layer, as described in JP-A-1-100258 is used.

Next, a method for producing an ultrafine particle film will be described. FIG. 3 is a diagram showing an example of an apparatus used for forming an ultrafine particle film.

In FIG. 3, an ultrafine particle generation chamber 42 and a vacuum chamber (ultrafine particle film deposition chamber) 43 communicate with each other through a nozzle 41. The nozzle 4 is used as a method for forming ultrafine particles.
1. A method of forming ultrafine particles in the ultrafine particle generation chamber 42 by gas phase excitation on the upstream side of 1 or a heating means such as resistance heating, electron beam heating or high frequency heating is used to generate the vapor of the raw material. Any method of producing ultrafine particles can be used.

In the example of FIG. 3, the raw material gas and the carrier gas are introduced into the ultrafine particle generation chamber 42 through the introduction pipe 44 to generate microwave plasma to produce ultrafine particles. The shape, size, crystallinity, etc. of the ultrafine particles can be easily controlled according to the pressure at the time.

In the present invention, various ultrafine particles composed of various elements can be prepared. For example, in the case of obtaining ultrafine particles made of oxide, a method of forming ultrafine particles by gas phase excitation on the upstream side of the nozzle by using an original substance or an oxide of the substance as a raw material and ejecting from the nozzle Then, oxygen gas is introduced at the time of gas phase excitation. or,
Even if a means for introducing oxygen gas is provided inside or outside the nozzle, an ultrafine particle film made of an oxide can be obtained.

Next, a method for increasing the filling rate of ultrafine particles to 50% or more will be described.

First, as a method for producing a gas flow containing ultrafine particles, particularly a gas beam containing ultrafine particles, a method of ejecting a gas containing ultrafine particles through a nozzle is effective.

The nozzle used for the means for generating the beam may be a parallel tube having a small diameter, a tapered nozzle, a contracting / expanding nozzle, or the like. Among them, the contracting expanding nozzle and the tapered nozzle and the downstream chamber outlet shape of the nozzle are used. When devised, it is particularly preferable because a gas containing ultrafine particles can be converted into a beam and a supersonic flow can be obtained.

A case where a reduction / expansion nozzle is used as a beam generating means will be described. As the reduction / enlargement nozzle 41,
Various shapes as shown in FIGS. 4A to 4C can be used. The operating principle of this beam generating means is as follows.

First, while supplying the raw material gas into the upstream chamber 42, the pressure P ₂ in the downstream chamber 43 is kept below a certain value, for example, 1P.
Control to be a or less. On the other hand, the pressure P ₁ of the upstream chamber 42 is controlled to a certain value or more, for example, 1 Pa or more, preferably 10 Pa or more, and the pressure ratio P _n / P ₁ between the upstream chamber 42 and the nozzle throat portion 41b is _{expressed by the following} formula (1). The critical pressure ratio given by is set below.

The critical pressure ratio is defined as follows. That is, when the flow velocity at the nozzle throat matches the speed of sound, the pressure ratio R between the pressure P _{1 in} the upstream chamber 42 and the pressure P _{n in the} nozzle throat 41b is ideally expressed by the following equation: R = [2 / (R + 1)] ^{r / (r-1)} (1) This value of R is called the critical pressure ratio. Here, r is a specific heat ratio.

The pressure in the throat of the nozzle can be measured through a hole (not shown) formed in the throat.

The supplied source gas flows from the upstream chamber 42 through the reduction / enlargement nozzle 41 into the downstream chamber 43 due to the pressure difference generated by the above pressure setting. The contraction / expansion nozzle 41 not only ejects the gas containing ultrafine particles in accordance with the pressure difference between the upstream side and the downstream side, but also forms the beam by ejecting the ejected gas containing ultrafine particles in the same traveling direction. , The gas containing ultrafine particles can be ejected as a supersonic flow into the downstream chamber with minimal diffusion and turned into a beam. If the gas containing ultrafine particles is transferred as a beam in this manner, it can be transferred as a beam in a spatially independent state by precise speed control under supersonic speed. For example, only to the substrate 45 of the downstream chamber 43. Ultrafine particle films can be deposited.

Next, a method of later oxidizing or nitriding the ultrafine particle film will be described. Ultrafine particle films are generally very active and can be easily oxidized. Ultrafine particle size is 5
If it is 0 Å or less, oxidation will proceed almost completely in steam at a temperature of 100 ° C for about 12 hours. Further, it may be oxidized or nitrided in plasma. Further, it can be easily oxidized even when it is irradiated with ultraviolet light such as a laser or a Xe lamp in an oxygen atmosphere.

Such ultrafine particles can be deposited on the semiconductor without causing thermal damage to the surface of the semiconductor or damage due to charged particles such as plasma, and due to the activity of the ultrafine particles, fine protection can be achieved. A film can be formed. This point is superior to the conventional protective film formed by the plasma CVD method or the like.

The method of oxidizing or nitriding after forming an ultrafine particle film of an inorganic material can oxidize even at a low temperature of 100 ° C. or less, and particularly when the particle diameter of the ultrafine particles is as small as 50 Å or less. It is possible to oxidize almost completely in a very short time.

Even if plasma is used as a means for oxidizing or nitriding the ultrafine particle film, the charged particles do not directly damage the semiconductor surface, which is superior to the formation of the protective film by the usual plasma CVD method.

[0034]

EXAMPLES Examples of the present invention will be specifically described below.

(Embodiment 1) FIG. 1 is a sectional view of a thin film transistor type optical sensor prepared according to this embodiment. 2A to 2D are process diagrams showing a method of manufacturing the thin film transistor type photosensor of the present embodiment.

In FIG. 2A, 1 is a glass substrate, 2 is
Is Cr serving as a gate electrode. Cr of the gate electrode 2 was deposited on the entire surface by a sputtering method or the like and patterned by a photolithography process using a photosensitive resist. After that, a hydrogenated amorphous silicon nitride film 3 (a-SiNx: H, silicon nitride film) to be a gate insulating film
, 3000 Å, hydrogenated amorphous silicon (a-Si: H) serving as the semiconductor layer 4 and 5,000 Å, and the n ⁺ layer 5 of the ohmic contact layer, 1000 Å, were successively and continuously deposited on the entire surface by plasma CVD.

In FIG. 2 (b), 10000Å of aluminum to be the upper electrode is deposited on the entire surface by sputtering or the like,
The source and drain electrodes 6 and 7 were formed by patterning by a photolithography process using a photosensitive resist 8. At this time, the photosensitive resist 8 is present on the electrodes.

In FIG. 2C, the n ⁺ layer 5 was etched to a predetermined depth by RIE using the photosensitive resin 8 as a mask, and then the photosensitive resist 8 was peeled off.

In FIG. 2D, a TFT and the like are separated by a photolithography process by etching by RIE or the like.

Next, ultrafine particles of silicon (Si) were deposited using the ultrafine particle film forming apparatus as shown in FIG. A mixed gas of SiH ₄ and H ₂ was used as a source gas, and the pressure of the upstream chamber 42 was set to 40 Pa and the pressure of the downstream chamber 43 was set to 0.2 Pa. First, a mixed gas of SiH ₄ and H ₂ is decomposed by microwave plasma in the upstream chamber 42 (the microwave power at this time was 180 W), and the decomposition product is formed on the substrate 45 through the nozzle 41. Thickness is 50
It was deposited to be 00Å.

The particle size of the ultrafine particles in the obtained Si ultrafine particle film was about 20Å as a result of TEM observation. Furthermore, when this ultrafine particle film was left at 80 ° C. under high temperature and high humidity of 85% for 100 hours, the Si ultrafine particles were oxidized and SiOx
A protective film was formed. Then, in dry air at 200 ℃, 2
Heat treatment was performed for a time to form the protective film 10.

Next, a slicer was placed at a position 2 mm away from the center position of the sensor with a slicer to a depth of 0.5 mm and division was performed to obtain a TFT type optical sensor.

FIG. 5 shows the change in the OFF current with respect to the time when the TFT type optical sensor thus manufactured was left at high temperature and high humidity (60 ° C., 90%). In addition, conventional T
The broken line in FIG. 5 shows the change in OFF current when a protective film obtained by depositing a polyimide film of 20000 Å was used in an FT type optical sensor. From FIG. 5, it was found that even if the protective film obtained by oxidizing the ultrafine particle film is used, the moisture resistance is equal to or higher than that of the protective film of the organic material.

Example 2 Similar to Example 1, 3800 Å of ultra-fine Si particles were deposited, the sample was transferred to a plasma CVD apparatus, and plasma nitriding was performed at a substrate temperature of 150 ° C. under a mixed gas atmosphere of N ₂ and H _2. Was done. Then N ₂ and H
RF power of SiNx film under mixed gas of ₂ and SiH ₄
3000 Å was deposited at 20 W. The obtained SiNx film had an N / Si ratio of 0.8 and was a Si-rich film.
This film had excellent moisture resistance.

When the TFT type optical sensor thus obtained was left at high temperature and high humidity (60 ° C., 90%),
The change in FF current was at a level (within 5%) that did not cause a problem even after 1000 hours. In addition, the photocurrent was 1.3 times larger and the S / N ratio was better than when the SiNx protective film was deposited from the beginning by the plasma CVD method. That is, by depositing the ultrafine particle film on the thin film semiconductor layer, it is considered that the photocurrent did not decrease because the plasma damage when depositing the SiNx film on the thin film semiconductor layer did not directly act on the thin film semiconductor layer. Be done. Further, since the base is an ultrafine particle film made of an inorganic material, it is possible to prevent contamination by hydrocarbon or the like in the plasma CVD apparatus during the plasma nitriding treatment.

(Embodiment 3) An example in which the TFT type optical sensor of the present invention is applied to an image reading apparatus such as a facsimile will be described.

Si ultrafine particles of 3000 Å were deposited using a large-sized ultrafine particle film forming apparatus as shown in FIG.
In FIG. 6, 41A, 41B and 41C are nozzles. Subsequently, plasma oxidation or nitridation was performed in a mixed gas atmosphere of NO ₂ and H ₂ using a plasma CVD apparatus, and then a SiNx film was deposited at 3000 Å by plasma CVD method. FIG. 7 shows a cross-sectional view when this thin film semiconductor device is applied to an image reading device such as a facsimile. The incident light from the light source 71 is reflected by the original 69, photoelectrically converted by the thin film transistor type photosensor formed in the step of FIG. 2, and the generated charge is accumulated by the charge storage capacitor formed in the same step. Further, transfer resetting of these charges is performed by the thin film transistor formed in the same step. In FIG. 7, 70 is a wear resistant layer and 72 is an adhesive layer.

FIG. 8 shows an example of a plan view of a circuit of a perfect contact type sensor composed of a thin film transistor type optical sensor of the present invention and a thin film semiconductor device such as a thin film transistor.

In the figure, 20 is a gate drive wiring part formed in a matrix, 21 is a photosensor part using the thin film transistor type photosensor according to the present invention, 22 is a charge storage part, and 23 is a thin film transistor according to the present invention. A transfer switch, 24 is a discharge switch using the thin film transistor according to the present invention for resetting the electric charge of the charge storage unit 22, 25 is a lead line connecting the signal output of the transfer switch to the signal processing IC, and 26 is a light incident window. is there. In this embodiment, a-S is used as the photoconductive semiconductor layer forming the photosensor unit 21, the transfer switch 23, and the discharge switch 24.
An i: H film is used, and a silicon nitride film formed by plasma CVD is used as an insulating layer.

In order to avoid complication, only the upper and lower electrode wirings are shown in FIG. 8, and the photoconductive semiconductor layer and the insulating layer are not shown. Further, an n ⁺ layer is formed at the interface between the upper layer electrode wiring and the semiconductor layer to form ohmic contact.

FIG. 9 shows an equivalent circuit of a circuit of the thin film transistor type optical sensor of the present invention and a circuit of a complete contact type sensor composed of a thin film semiconductor device such as a thin film transistor. In the figure, S _{i, 1} , S _{i, 2} , S _{i, 3} , ... S _{i, N}
Is an optical sensor forming the optical sensor unit 21 of FIG. 8, i is a block number, and 1 to N are bit numbers in the block (hereinafter referred to as S _{i, n} ). Further, in the figure, C _{i, n} is a capacitor of the charge accumulating section 22 and accumulates respective photocurrents corresponding to the photosensors S _{i, n} . Also,
Transistor ST of transfer switch 23 for transferring the charge of storage capacitor C _{i, n} to load capacitor CX _{n
i, n,} transistor SR i of the discharge switch 24 for resetting the electric _{charge, n} correspond similarly.

The photosensor S _{i, n} , the storage capacitor C _{i, n} , the transfer switch transistor ST _{i, n} , and the discharge switch transistor SR _{i, n} are arranged in a line in an array, and N One block is composed of
It is divided into M blocks as a whole. For example, if there are 1728 sensors, then N
= 32 and M = 54. Transfer switches ST _{i, n} provided in an array and discharge switch SR
The gate electrodes of _{i and n} are connected to the gate wiring portion. The gate electrodes of the transfer switches ST _{i, n} are commonly connected in the first block, and the gate electrodes of the discharge switches SR _{i, n} are connected to the gate electrodes of the transfer switches in the next block.

[0053] common lines of the matrix wiring portion 20 (the gate driving line _{G 1, G 2, G 3} , ····· G M) is driven by the gate driver 246. On the other hand, the signal output is the lead line 25 (the signal output line D
₁ , D ₂ , D ₃ , ... _DN ) are connected to the signal processing unit 247. Further, the gate electrode of the optical sensor S _{i, n} is connected to the driving unit 250 and a negative bias is applied.

In such a structure, the gate drive lines G ₁ ,
G _2, G _3, ····· G sequentially selecting pulse from the gate driver 246 in the _{M (VG 1, VG 2,} VG 3, ····
・ VG _M ) is supplied. First, when G ₁ is selected for the gate drive line, the transfer switches ST _{1,1 to} ST _{1 , N} are turned off.
The N state is established, and the charges accumulated in the storage capacitors C _{1,1 to} C _{1, N} are transferred to the load capacitors CX _{1 to} CX _N. Next, when the gate drive line G ₂ is selected, the transfer switches ST _{2,1 to} ST _{2, N} are turned on, and the charges accumulated in the storage capacitors C _{2,1 to} C _{2, N} are loaded into the load capacitors. Transferred to CX _{1 to} CX _N , and at the same time discharge switch S
R _{1, 1} to SR _1, storage than _N capacitors C _{1, 1} ~C _{1, N} of the charge is reset. In the same manner, the gate driving line _{G 3, G 4, G 5} , are selected also · · · · · G _M, the read operation is performed. These operations are performed for each block, and the signal outputs VX ₁ and VX of each block are output.
_{X 2, VX 3, ····· VX} N input D ₁ of the signal processing section 247, D _2, D _3, is sent to the · · · · · D _N, is output after being converted into a serial signal.

As an application example of the thin film semiconductor device of the present invention,
Here, as shown in FIG. 7, only the lensless perfect contact type image reading device for reading the original 69 by forming the abrasion resistant layer 70 on the optical sensor and illuminating it from the back surface of the sensor with the light source 71 has been described. Further, the present invention can be applied to a contact type image reading apparatus using a 1 × imaging lens (for example, Selfoc lens manufactured by Nippon Sheet Glass Co., Ltd.).

The perfect contact type image reading apparatus thus obtained has an S / N ratio of 10% due to the improvement of the optical signal output.
I was able to improve it.

Although the example of Si has been shown above as the ultrafine particles, the same effect can be obtained by using ultrafine particles of a material such as Ge or Ta, Ti, Al. In particular, when Ta or the like is used, the oxidation rapidly progresses and the denseness is lowered just by taking it out into the atmosphere. Therefore, when forming a dense protective film of Ta ₂ O ₅ or the like, it is preferable to advance the oxidation while sending a small amount of oxygen into the ultrafine particle film forming apparatus.

[0058]

As described above, according to the present invention, by using an ultrafine particle film as a protective film of a thin film semiconductor device such as a thin film transistor or a thin film transistor type optical sensor, the thin film semiconductor layer is protected without being damaged. A film can be formed, and a thin film semiconductor device with favorable characteristics can be provided.

Further, it becomes possible to provide a thin film layer of the inorganic material having excellent moisture resistance as a protective film on the ultrafine particle film of the inorganic material without impairing the thin film semiconductor characteristics. A thin film semiconductor device satisfying stability can be provided.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a thin film semiconductor device according to the present invention.

FIG. 2 is a process drawing showing a method of manufacturing a thin film semiconductor device according to the present invention.

FIG. 3 is a view showing an example of an apparatus used for forming an ultrafine particle film.

FIG. 4 is a diagram showing an example of a nozzle used in an ultrafine particle film forming apparatus.

FIG. 5 is a diagram showing a change in OFF current with respect to a high temperature and high humidity standing time.

FIG. 6 is a view showing a large-sized apparatus used for forming an ultrafine particle film.

FIG. 7 is a sectional view of an image reading apparatus using a thin film semiconductor device according to the present invention.

FIG. 8 is a plan view of an image reading device using a thin film semiconductor device according to the present invention.

FIG. 9 is an equivalent circuit diagram of an image reading apparatus using a thin film semiconductor device according to the present invention.

FIG. 10 is a cross-sectional view of a conventional thin film semiconductor device.

[Explanation of symbols]

1, 31 glass substrate 2, 32 gate electrode 3, 33 gate insulating film 4, 34 semiconductor film 5, 35 n ⁺ layer (ohmic contact layer) 6, 36 source electrode layer (upper electrode layer) 7, 37 drain electrode layer ( Upper electrode layer) 8 Photosensitive resist 10 Protective film 41 Nozzle 41b Nozzle throat 42 Ultrafine particle generation chamber (upstream chamber) 43 Vacuum chamber (downstream chamber) 44 Gas introduction tube 45 Base 69 Original 70 Abrasion resistant layer 71 Light source 20 Matrix formation Gate wiring section 21 Photosensor section 22 Charge accumulation section 23 Transfer switch 24 Discharge switch 25 Signal output lead line 26 Light incident window 246 Gate drive section 247 Signal processing section 250 Sensor Gate drive section S _{i, n} Photosensor C _{i, n} storage capacitor CX _n load capacitor ST _{i, n} transfer switching transistors SR _{i, n} reset switching Rajisuta

Claims (5)

[Claims] 1. At least a semiconductor layer and an electrode layer are provided,
A thin film semiconductor device having a structure in which these are protected by a protective film, wherein the protective film is made of an ultrafine particle film of an inorganic material. 2. The thin film semiconductor device according to claim 1, wherein the semiconductor layer and the electrode layer are formed on an insulating substrate, and a protective film is formed on the semiconductor layer and the electrode layer. 3. The thin film semiconductor device according to claim 1, wherein the semiconductor layer is made of non-single crystal silicon. 4. The method for manufacturing the thin film semiconductor device according to claim 1, wherein the ultrafine particle film is formed by directly adhering oxide or nitride ultrafine particles. Manufacturing method of semiconductor device. 5. The method for manufacturing a thin film semiconductor device according to claim 1, wherein the ultrafine particle film is formed beforehand with an unoxidized and unnitrided inorganic material ultrafine particle film. A method for manufacturing a thin-film semiconductor device, which is characterized in that it is formed by oxidizing or nitriding an ultrafine particle film of an inorganic material that is not oxidized or nitrided.