JPS60143626A - Manufacture of image sensor - Google Patents

Manufacture of image sensor

Info

Publication number
JPS60143626A
JPS60143626A JP58248443A JP24844383A JPS60143626A JP S60143626 A JPS60143626 A JP S60143626A JP 58248443 A JP58248443 A JP 58248443A JP 24844383 A JP24844383 A JP 24844383A JP S60143626 A JPS60143626 A JP S60143626A
Authority
JP
Japan
Prior art keywords
electrode
film
gas
forming
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58248443A
Other languages
Japanese (ja)
Inventor
Tetsuya Ogawa
哲也 小川
Nobuyoshi Takagi
高城　信義
Koichi Hiranaka
弘一 平中
Michiya Oura
大浦　道也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58248443A priority Critical patent/JPS60143626A/en
Publication of JPS60143626A publication Critical patent/JPS60143626A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a Schottky electrode having a favorably interfacial characteristic and having a stable diode characteristics by a method wherein after an electrode pattern is formed, a photo resist is removed according to gas plasma etching containing oxygen in a vacuum device, and an amorphous silicon film is formed in the same vacuum device. CONSTITUTION:A transparently conductive film 12 is adhered wholly on a glass substrate 11, a photo resist film is applied to be formed on the whole surface in succession, and patterning is performed corresponding to an electrode pattern to form a resist pattern 13 to be used as a mask. Then glow discharge is generated between the top electrode 2a and the bottom electrode 2b of a chamber 1, and the transparently conductive film 12 is etched to form an electrode 12a. Oxygen gas is introduced in the same chamber 1 in succession, and the resist pattern 13 is removed by performing plasma etching according to glow discharge. Then monosilane gas is introduced, and glow discharge is generated to form an a-Si film 14 on the whole surface containing the electrode 12a. Then, the a-Si film 14 is patterned to form a top electrode 15. Because the surface of the electrode 12a is clean, the diode thereof indicates a stable characteristic.

Description

【発明の詳細な説明】 （１）発明の技術分野 本発明はアモルファス・シリコンを感光素子として用い
るイメージセンサの製造方法、特にイメージセンサを構
成するショットキ接合型フォトダイオードの電極を清浄
に保つための方法に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for manufacturing an image sensor using amorphous silicon as a photosensitive element, and in particular a method for keeping clean the electrodes of a Schottky junction photodiode that constitutes the image sensor. Regarding the method.

（２）技術の背景 光通信において光信号を電気信号に変換するために、ダ
イオードが多数並んだ構成のイメージセンサが用いられ
、かかるダイオードはショットキ電極と半導体からなる
ショットキ接合型フォトダイオードである。(2) Background of the Technology In optical communication, an image sensor having a configuration in which a large number of diodes are lined up is used to convert an optical signal into an electrical signal, and such a diode is a Schottky junction photodiode made of a Schottky electrode and a semiconductor.

（３）従来技術と問題点 従来、ショットキ接合型フォトダイオードを用いたイメ
ージセンサの製造は、ショットキ電極をフォトレジスト
によりパターニングし、レジストを除去した後アモルフ
ァス・シリコン膜形成装置にセットし膜形成を行うこと
によってなされた。(3) Conventional technology and problems Conventionally, in manufacturing an image sensor using a Schottky junction photodiode, a Schottky electrode is patterned using a photoresist, and after removing the resist, the film is formed by setting it in an amorphous silicon film forming apparatus. done by doing.

（２） しかし、この場合にレジスト除去した清浄な電極表面が
大気中にさらされるため、表面に大気中の不純物（水分
、炭素、有機物など）が付着しやすく、ショットキ接合
の電気特性のバラツキや不良の原因となっていた。(2) However, in this case, the clean electrode surface from which the resist has been removed is exposed to the atmosphere, so impurities in the atmosphere (moisture, carbon, organic matter, etc.) are likely to adhere to the surface, causing variations in the electrical properties of the Schottky junction. This was the cause of the defect.

（４）発明の目的 本発明は上記従来の問題点に鑑み、シロソトキ接合型フ
ォ１〜ダイオードの製造において界面特性の良好な安定
したタイオート特性をもったショットキ電極の形成方法
を提供することを目的とする。(4) Purpose of the Invention In view of the above-mentioned conventional problems, an object of the present invention is to provide a method for forming a Schottky electrode having good interfacial characteristics and stable tie-out characteristics in the production of diodes of the Shirosotoki junction type. purpose.

（５）発明の構成 そしてごの目的は本発明によれば、アモルファス・シリ
コンを感光素イとして用いるイメージセンサの製造にお
いて、電極パターン形成後真空装置内で酸素を含むガス
プラズマエツチングにより電極パターン形成に用いたフ
ォｉ−レジストを除去する工程、および同一真空装置内
で真空を破ることなくモノシランまたはジシランガスプ
ラズマによりアモルファス・シリ：１ン膜を形成する工
程を含むことを特徴とするイメージセンサの製造方法（
３） と、アモルファス・シリコンを感光素子として用いるイ
メージセンサの製造において、電極パターン形成後真空
装置内で酸素を含むガスプラズマエツチングにより電極
パターン形成に用いたフォトレジスＩ・を除去する工程
、および同一真空装置内で真空を破ることなくモノシラ
ンまたはジシランと酸素を含有するガスを用いるプラズ
マにより二酸化シリコン膜を形成する工程を含むことを
特徴とするイメージセンサの製造方法とを提供すること
によって達成される。(5) Structure and object of the invention According to the present invention, in manufacturing an image sensor using amorphous silicon as a photosensitive element, after forming an electrode pattern, the electrode pattern is formed by gas plasma etching containing oxygen in a vacuum apparatus. An image sensor characterized by comprising the steps of removing the photoresist used in Production method(
3) In manufacturing an image sensor using amorphous silicon as a photosensitive element, after forming an electrode pattern, a process of removing the photoresist I used for forming the electrode pattern by gas plasma etching containing oxygen in a vacuum apparatus, and the same process. This is achieved by providing a method for manufacturing an image sensor, comprising a step of forming a silicon dioxide film by plasma using a gas containing monosilane or disilane and oxygen without breaking the vacuum in a vacuum apparatus. .

（６）発明の実施例 以下本発明実施例を図面によって詳説する。(6) Examples of the invention Embodiments of the present invention will be explained in detail below with reference to the drawings.

本発明においては、アモルファス・シリコン膜の形成と
ショットキ電極の形成の際に用いたフォト１／シストの
除去とを同一装置内で行う方法を提供する。かかる装置
は第１図に断面で示され、同図において、Ｊば反応炉を
構成するチャンバ、２ａと２ｂとは平行に配列された」
二部電極と下部電極、３ば下部電極２ｈ上に載置された
試料、４ａ、　４ｂ、　４ｃは反応ガスの導入孔、５ば
図示しない真空ポンプ（４） に導く排気孔、６はｇ＋；周波電源を示す。次に第２図
を参ｊ１．ｑ　Ｌ、て本発明の方法を実施ずろ一■−程
を説明する。The present invention provides a method in which the formation of an amorphous silicon film and the removal of the photo 1/cyst used in the formation of the Schottky electrode are performed in the same apparatus. Such an apparatus is shown in cross section in FIG. 1, in which the chambers 2a and 2b forming the reactor are arranged in parallel.
A two-part electrode and a lower electrode; 3, a sample placed on the lower electrode 2h; 4a, 4b, and 4c, reaction gas introduction holes; 5, an exhaust hole leading to a vacuum pump (4) (not shown); 6, g+; Shows frequency power supply. Next, see Figure 2 j1. The first step in carrying out the method of the present invention will be explained.

第２図（ａ）ニ ガラス基板ＩＬヒに透明導電膜＋２　（１ｎｚｏ３．５
ｎ０２＋ＩＴＯ（インジウム・鉗オキサイド）など）を
スパッタによって全面イ（１着し、引続き全面にフォト
レジス日椰（以下レジスト欣という）を塗布形成し、そ
れを電極パターンに対応してパターニングし、マスクと
して用いるレジストパターン１３を作る。Figure 2 (a) Transparent conductive film +2 (1nzo3.5
N02+ITO (indium oxide), etc.) is deposited on the entire surface by sputtering, followed by coating and forming a photoresist (hereinafter referred to as resist) on the entire surface, patterning it in accordance with the electrode pattern, and using it as a mask. A resist pattern 13 to be used is created.

第１図に示ず試料３ばかかるガラス基板である。This is a glass substrate that is not shown in FIG. 1 and requires only three samples.

第２図（ｂ）： 次いでチャンバ１の４二部電極２ａと一ト部電極２ｂの
間でグロー放電を行い、ＣＩ”ｐ２１’ｚ　（）１：Ｉ
ン１２と呼称される反応ガス）を例えばガス導入（Ｌ４
ａから導入し７、レジストパターン１３をマスクにＵ７
て透明導電膜１２をエツチングし、電極＋２ａを形成す
る。FIG. 2(b): Next, glow discharge is performed between the 4-part electrode 2a and the 4-part electrode 2b of the chamber 1, and CI"p21'z ()1:I
For example, gas introduction (reactant gas called L4) (reactant gas called L4
Introducing from a 7, using resist pattern 13 as a mask U7
The transparent conductive film 12 is etched to form an electrode +2a.

第２図（Ｃ）： 引続き同一チャンバ１内で、導入孔４ａを閉じ、導入孔
４ｈかり酸素（０：？　）ガスを導入し、グロー（５） 放電によるプラズマエツチングでレジストパターン１３
を除去する。そのとき透明導電１嘆で作った電極１２ａ
の表面は清浄な状態にある。Figure 2 (C): Continuing in the same chamber 1, the introduction hole 4a is closed, oxygen (0:?) gas is introduced through the introduction hole 4h, and the resist pattern 13 is etched by plasma etching using glow (5) discharge.
remove. At that time, electrode 12a made of transparent conductor 1
surface is in a clean condition.

第２図（ｄ）ニ レジストパターン１３が除去されると、導入孔４ｂを閉
じ、次いでモノシラン（５ｉｌ１１　）ガスを導入孔４
ｃから導入し、グロー放電を行い電極１２ａを含む全面
にアモルファス・シリコン（ａ−３ｔ）を堆積し、ａ−
５ｉ膜１４を形成する。FIG. 2(d) After the resist pattern 13 is removed, the introduction hole 4b is closed, and then monosilane (5il11) gas is introduced into the introduction hole 4b.
Amorphous silicon (a-3t) is introduced over the entire surface including the electrode 12a by performing glow discharge and depositing amorphous silicon (a-3t) from a-
5i film 14 is formed.

以上第２図（ｂｌからｆｄｌまでを参照して説明した工
程は、チャンバ１内でその真空度を破ることなく行われ
るので、電極１２ａの表面は大気にさらされることなく
、レジストパターン１３がエツチング除去された後の清
浄な状態に保たれる。The steps described above with reference to FIG. 2 (BL to FDL) are performed within the chamber 1 without breaking the vacuum, so the surface of the electrode 12a is not exposed to the atmosphere and the resist pattern 13 is etched. It remains clean after being removed.

第２図（ｅ）； 次いでａ−５ｉｌＥｔ’１４をパターニングし、例えば
アルミニウム（八β）でに１部電極１５を形成すると、
図に示す如きダイオードが形成される。このダイオード
は、電極１２ａの表面が清浄であるので安定した特性を
示す。FIG. 2(e); Then, when a-5ilEt'14 is patterned and a partial electrode 15 is formed, for example, from aluminum (8β),
A diode as shown in the figure is formed. This diode exhibits stable characteristics because the surface of the electrode 12a is clean.

（６） 本願のもう１つの発明は、前記問題点を解決するために
、二酸化シリコン（５ｉＯ２）　ｌＫ’形成と、レジス
ト除去を同一装置で行うことを特徴とする方法に関する
ものであり、それによって昇面特性の良好な安定したダ
イオード特性が得られるものである。(6) Another invention of the present application, in order to solve the above-mentioned problem, relates to a method characterized in that silicon dioxide (5iO2) lK' formation and resist removal are performed in the same apparatus, thereby Stable diode characteristics with good surface-elevating characteristics can be obtained.

そのためには、第２図（ａ＋から（Ｃ１までを参照して
説明した工程を終えた後に、第３図（８１に示される如
く　（なお第３図において第２図に示した部分と同じ部
分は同一符号を付して表示する）、　５ｉ）Ｉｎと酸化
二窒素（Ｎ２０）の混合ガスを導入し、グロー放電を行
い電極１２ａを含む全面に５ｉ０２を堆積して５ｉｎ２
１１ＷＩ６を形成する。なお、電極１２ａは透明専電膜
以外の全屈であってもよい。To do this, after completing the steps explained with reference to Figure 2 (a+ to (C1), 5i) A mixed gas of In and dinitrogen oxide (N20) is introduced, and glow discharge is performed to deposit 5i02 on the entire surface including the electrode 12a.
11WI6 is formed. Note that the electrode 12a may be made of a fully curved film other than a transparent electrically conductive film.

次いで５ｉ０２１模１６を第３図（ｂｌに示される如く
バクーニンクし、アモルファス・シリコン膜１７を図示
の如く形成してイメージセンサ−を作ると、電極１２ａ
の表面は大気にさらされることがなかったので清浄に保
たれ、安定した特性が得られる。Next, the 5i021 pattern 16 is baked as shown in FIG.
Since the surface was never exposed to the atmosphere, it remained clean and had stable characteristics.

５ｉ０２膜１６は電極１２ａの表面を大気にさらさな（
７） い（！１ＩＩＪきをするだけでなく、第３図ｆｂｌに示
される如く装置の他の部分に下部配線層１８が設けられ
ているとき、下部配線層１８と５ｉ０２膜１６の上に形
成される上部配線層１９とを絶縁する層間絶縁膜ともな
る。The 5i02 film 16 prevents the surface of the electrode 12a from being exposed to the atmosphere (
7) When the lower wiring layer 18 is provided in other parts of the device as shown in FIG. It also serves as an interlayer insulating film that insulates the upper wiring layer 19.

（７）発明の効果 以」−詳細に説明した如く本発明によれば、フォトレジ
スト除去後の電極表面が大気にさらされることがないの
でより清浄な界面が得られ、ダイオードの電気特性を向
上させるに効果大である。(7) Effects of the Invention - As explained in detail, according to the present invention, the electrode surface after photoresist removal is not exposed to the atmosphere, resulting in a cleaner interface and improving the electrical characteristics of the diode. It is very effective for

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明を実施するための装置の断面図、第２図
と第３図は本発明を実施する工程におけるイメージセン
サ−要部の断面図である。 １１−ガラス基板、１２−透明導電膜、１２ａ−一電極
、１３−　レジストパターン、１４−−ａ−５ｉ膜、１
５−上部電極、１６−５ｉＯ２ＰＪ、１７−ａ−５ｔ膜
、１８−下部配線層、１９−上部配線層 （８） Ｄ　Ｏ℃FIG. 1 is a sectional view of an apparatus for implementing the present invention, and FIGS. 2 and 3 are sectional views of essential parts of an image sensor in the process of implementing the present invention. 11-Glass substrate, 12-Transparent conductive film, 12a-One electrode, 13-Resist pattern, 14--a-5i film, 1
5-upper electrode, 16-5iO2PJ, 17-a-5t film, 18-lower wiring layer, 19-upper wiring layer (8) DO°C

Claims (2)

【特許請求の範囲】[Claims] （１）アモルファス・シリコンを感光素子として用いる
イメージセンサの製造において、電極パターン形成後真
空装置内で酸素を含むガスプラズマエツチングにより電
極パターン形成に用いたフォトレジストを除去する工程
、および同一真空装置内で真空を破ることなくモノシラ
ンガスまたはジシランガスプラズマによりアモルファス
・シリコン膜を形成する工程を含むことを特徴とするイ
メージセンサの製造方法。(1) In the production of image sensors that use amorphous silicon as a photosensitive element, the process of removing the photoresist used for forming the electrode pattern by gas plasma etching containing oxygen in a vacuum device after forming the electrode pattern; A method for manufacturing an image sensor, comprising the step of forming an amorphous silicon film using monosilane gas or disilane gas plasma without breaking the vacuum. （２）アモルファス・シリコンを感光素子として用いる
イメージセンサの製造において、電極パターン形成後真
空装置内で酸素を含むガスプラズマエツチングにより電
極パターン形成に用いたフォトレジストを除去する工程
、および同一真空装置内で真空を破ることなくモノシラ
ンまたはジシランと酸素を含有するガスを用いるプラズ
マにより二（１） 酸化シリコン膜を形成する工程を含むことを特徴とする
イメージセンサの製造方法。(2) In the production of image sensors that use amorphous silicon as a photosensitive element, the process of removing the photoresist used for forming the electrode pattern by gas plasma etching containing oxygen in a vacuum device after forming the electrode pattern; A method for manufacturing an image sensor, comprising the step of forming a di(1) silicon oxide film by plasma using a gas containing monosilane or disilane and oxygen without breaking a vacuum.
JP58248443A 1983-12-29 1983-12-29 Manufacture of image sensor Pending JPS60143626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58248443A JPS60143626A (en) 1983-12-29 1983-12-29 Manufacture of image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58248443A JPS60143626A (en) 1983-12-29 1983-12-29 Manufacture of image sensor

Publications (1)

Publication Number Publication Date
JPS60143626A true JPS60143626A (en) 1985-07-29

Family

ID=17178199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58248443A Pending JPS60143626A (en) 1983-12-29 1983-12-29 Manufacture of image sensor

Country Status (1)

Country Link
JP (1) JPS60143626A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01201970A (en) * 1988-02-08 1989-08-14 Fujitsu Ltd Image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01201970A (en) * 1988-02-08 1989-08-14 Fujitsu Ltd Image sensor

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