JPH0533125A - Laser vapor-deposition device - Google Patents

Laser vapor-deposition device

Info

Publication number
JPH0533125A
JPH0533125A JP20754091A JP20754091A JPH0533125A JP H0533125 A JPH0533125 A JP H0533125A JP 20754091 A JP20754091 A JP 20754091A JP 20754091 A JP20754091 A JP 20754091A JP H0533125 A JPH0533125 A JP H0533125A
Authority
JP
Japan
Prior art keywords
window member
particles
window
electrodes
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20754091A
Other languages
Japanese (ja)
Inventor
Jun Funatsu
準 船津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to JP20754091A priority Critical patent/JPH0533125A/en
Publication of JPH0533125A publication Critical patent/JPH0533125A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To remove the vaporized particle deposited on the incident window for laser beam of the vacuum vessel of a laser vapor-deposition device. CONSTITUTION:An opening 3 for making a laser beam incident on the flank of a vacuum vessel 2 is provided and a transparent window member 4 made of an insulator is hermetically loaded on the opening 3. Electrodes 7 and 8 are supported by an insulating holder 11 and abutted on the window member 4 by springs 12 and 13. Rods 9 and 10 fixed to the electrodes 7 and 8 are connected to a power source 14 through a switching means 15. When the vaporized particles (m) are deposited in the window member 4, the switching means 15 is closed to impress a voltage between the electrodes 7 and 8, hence a current passes through the deposited particles (m), and heat is produced. The particles (m) deposited on the window member 4 are vaporized by the heat and removed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、レーザ光により真空中
で蒸発物質を蒸発させ、シリコンウェハ等の基材に蒸着
膜を形成するレーザ蒸着装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser vapor deposition apparatus for vaporizing an evaporation substance in a vacuum by a laser beam to form a vapor deposition film on a substrate such as a silicon wafer.

【0002】[0002]

【従来の技術】レーザ蒸着装置は、レーザ光を入射させ
るための光学的に透明な入射窓を設けた真空容器と、真
空容器の外部から入射窓を通して真空容器内の蒸発物質
にレーザ光を照射するレーザ光源とから構成されてい
る。この構成により、真空容器内に蒸発物質および被処
理物である基材を配置し、入射窓を通してレーザ光を真
空下の蒸発物質に照射することによって蒸発物質が蒸発
し、基材の表面に付着して蒸着膜を形成する。レーザ蒸
着装置は、従来の蒸着装置に比べて真空度を高くするこ
とができるため不純物が少なく、緻密で基材との密着度
の高い蒸着膜を形成することができる。
2. Description of the Related Art A laser vapor deposition apparatus irradiates a vacuum container provided with an optically transparent entrance window for entering a laser beam and a laser beam from outside the vacuum container to an evaporation material in the vacuum container through the entrance window. And a laser light source that operates. With this configuration, the evaporation material and the base material that is the object to be processed are placed in a vacuum container, and the evaporation material is evaporated by irradiating the evaporation material under vacuum with a laser beam through the entrance window and adheres to the surface of the base material. Then, a vapor deposition film is formed. Since the laser vapor deposition apparatus can increase the degree of vacuum as compared with the conventional vapor deposition apparatus, it is possible to form a dense vapor deposition film having a small amount of impurities and a high degree of adhesion to a substrate.

【0003】従来のレーザ蒸着装置では、蒸発粒子の付
着により入射窓の内側が汚染されてレーザ光が遮られる
ため、安定して連続的に蒸着を行うことができない。し
たがって、長時間の蒸着処理を行う場合、途中で蒸着を
止めて窓部材を交換しており、その都度、真空容器内の
真空引きを行わなければならないので効率が悪いという
問題がある。
In the conventional laser vapor deposition apparatus, since the inside of the entrance window is contaminated by the deposition of vaporized particles and the laser beam is blocked, stable and continuous vapor deposition cannot be performed. Therefore, when performing the vapor deposition process for a long time, the vapor deposition is stopped midway and the window member is replaced, and the vacuum inside the vacuum container must be evacuated each time, so there is a problem of poor efficiency.

【0004】そこで、これらの問題を解決するためのも
のが種々提案されており、例えば特開昭62−7745
6号公報には、レーザ光を通すための微小孔を有する排
気用ボックスを真空容器内にその入射窓を覆うように設
け、この排気用ボックス内に不活性ガスを供給するよう
にしたレーザ蒸着装置が開示されている。この構成によ
り、不活性ガスを供給して排気用ボックス内の圧力を真
空容器内の蒸発物質側よりも高圧にし、微小孔から蒸発
物質側へ不活性ガスを吹出させ入射窓に向かって飛来す
る蒸発粒子を吹飛ばすことによって入射窓の汚染を防止
するようにしている。
Therefore, various proposals have been made to solve these problems, for example, JP-A-62-7745.
In Japanese Patent Laid-Open Publication No. 6-242, an exhaust box having minute holes for passing a laser beam is provided in a vacuum container so as to cover its entrance window, and an inert gas is supplied into the exhaust box. A device is disclosed. With this configuration, the inert gas is supplied to make the pressure in the exhaust box higher than that of the vaporized substance side in the vacuum container, and the inert gas is blown from the minute holes to the vaporized substance side to fly toward the incident window. Contamination of the entrance window is prevented by blowing off evaporated particles.

【0005】また、特開昭63−11660号公報には
回転シャッタを設けて真空容器の入射窓の汚染を少なく
するようにしたレーザ蒸着装置が開示されており、特開
昭63−157861号公報には真空容器の入射窓の汚
染状態を監視できるようにしたレーザ蒸着装置が開示さ
れている。
Further, Japanese Patent Application Laid-Open No. 63-11660 discloses a laser vapor deposition apparatus in which a rotary shutter is provided so as to reduce contamination of an entrance window of a vacuum container, and Japanese Patent Application Laid-Open No. 63-157861. Discloses a laser deposition apparatus capable of monitoring a contamination state of an entrance window of a vacuum container.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、特開昭
62−77456号公報に開示されたものでは、入射窓
に向かって飛来する蒸発粒子を全て吹飛ばすことは不可
能なため、微小孔を通過した蒸発粒子が少しずつ入射窓
に付着する。よって、入射窓の汚染を完全に防止するこ
とができない。また、不活性ガスにより真空容器内の真
空度が低下するため、蒸発粒子の基材への密着性が低下
したり、蒸着膜がホーラス状になりやすく膜質が低下す
るという問題を生じる。
However, in the one disclosed in Japanese Patent Laid-Open No. 62-77456, it is impossible to blow off all the vaporized particles flying toward the entrance window, and therefore the fine particles pass through the minute holes. The evaporated particles are gradually attached to the entrance window. Therefore, the contamination of the entrance window cannot be completely prevented. Further, since the degree of vacuum in the vacuum container is lowered by the inert gas, there are problems that the adhesion of the vaporized particles to the substrate is lowered, and the vapor deposition film is likely to become a horus and the film quality is deteriorated.

【0007】特開昭63−11660号公報ものでは、
連続発振時に入射窓の汚染を完全に防止することはでき
ない。また、特開昭63−157861号公報もので
は、蒸発粒子の入射窓への付着は防止できない。
In Japanese Patent Laid-Open No. 63-11660,
It is not possible to completely prevent contamination of the entrance window during continuous oscillation. Further, in Japanese Patent Laid-Open No. 63-157861, it is impossible to prevent the evaporation particles from adhering to the entrance window.

【0008】本発明は、以上の点に鑑みてなされたもの
であり、真空容器の入射窓に付着した蒸発物質を完全に
除去することができるレーザ蒸着装置を提供することを
目的とする。
The present invention has been made in view of the above points, and an object of the present invention is to provide a laser vapor deposition apparatus capable of completely removing the vaporized substance adhering to the entrance window of the vacuum container.

【0009】[0009]

【課題を解決するための手段】本発明のレーザ蒸着装置
は、上記の課題を解決するために、真空容器に設けられ
たレーザ光入射窓にレーザ光を透過しうる絶縁体からな
る窓部材を装着し、該窓部材に電極を取付け、該電極を
スイッチング手段を介して電源に接続したことを特徴と
する。
In order to solve the above-mentioned problems, the laser vapor deposition apparatus of the present invention includes a window member made of an insulator capable of transmitting a laser beam in a laser beam incident window provided in a vacuum container. It is characterized in that it is mounted, an electrode is attached to the window member, and the electrode is connected to a power source through a switching means.

【0010】[0010]

【作用】このように構成したことにより、窓部材に蒸発
粒子が付着した状態で電極に電圧を印加すると、窓部材
に付着した蒸発粒子に電流が流れて熱が発生し、この熱
によって窓部材に付着した蒸発粒子が蒸発して除去され
る。
With this structure, when a voltage is applied to the electrode with the vaporized particles attached to the window member, a current flows through the vaporized particles attached to the window member to generate heat, and this heat causes the window member to be heated. Evaporated particles attached to are evaporated and removed.

【0011】[0011]

【実施例】以下、本発明の一実施例を図面に基づいて詳
細に説明する。本実施例のレーザ蒸着装置の要部である
窓部分の縦断面を図1に示し、装置全体を図2に示す。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. FIG. 1 shows a vertical cross section of a window portion, which is a main part of the laser vapor deposition apparatus of this embodiment, and FIG. 2 shows the entire apparatus.

【0012】図2に示すように、本実施例のレーザ蒸着
装置1は、真空容器2の側壁にレーザ光入射用の開口3
が設けられ、この開口3に絶縁体からなる透明な窓部材
4が気密的に取付けられている。真空容器2内には、蒸
発物質Mを入れる蒸発物質容器5および蒸発物質容器5
の上方に位置する被処理物である基材Wを保持する基材
保持具6が設けられている。また、真空容器2には、こ
の真空容器2内の真空引きを行う真空装置(図示せず)
が接続されている。真空容器2の外部には、開口3を通
して蒸発物質Mにレーザ光を照射するレーザ光源(図示
せず)が設けられている。
As shown in FIG. 2, in the laser vapor deposition apparatus 1 of this embodiment, the side wall of the vacuum container 2 is provided with an opening 3 for laser light incidence.
Is provided, and a transparent window member 4 made of an insulator is airtightly attached to the opening 3. In the vacuum container 2, the evaporation material container 5 for containing the evaporation material M and the evaporation material container 5
A base material holder 6 for holding a base material W, which is an object to be processed, is provided above the base material. In addition, the vacuum container 2 has a vacuum device (not shown) for evacuating the vacuum container 2.
Are connected. A laser light source (not shown) that irradiates the evaporation material M with laser light through the opening 3 is provided outside the vacuum container 2.

【0013】図1に示すように、開口3に取付けられた
窓部材4の内側には、窓部材4に当接する電極7と電極
8とが互い間隔をおいて設けられている。この電極7お
よび電極8は、それぞれその背面側に連結されたロッド
9,10が真空容器2の側壁に固定された絶縁ホルダ11に摺
動可能に挿通されており、電極7,8と絶縁ホルダ11と
の間に介装されたばね12,13 によって窓部材4に押圧さ
れている。ロッド9および10は、電極7と電極8とに電
圧を印加する電源14にスイッチング手段15を介して接続
されている。なお、図中、16は真空容器2と窓部材4と
の間に介装されるシール部材である。
As shown in FIG. 1, inside the window member 4 attached to the opening 3, an electrode 7 and an electrode 8 which are in contact with the window member 4 are provided at a distance from each other. The electrodes 7 and 8 are rods connected to the back side thereof, respectively.
9, 10 are slidably inserted in an insulating holder 11 fixed to the side wall of the vacuum container 2, and springs 12, 13 interposed between the electrodes 7, 8 and the insulating holder 11 cause the window member 4 to move. Pressed. The rods 9 and 10 are connected via a switching means 15 to a power supply 14 that applies a voltage to the electrodes 7 and 8. In the figure, 16 is a seal member interposed between the vacuum container 2 and the window member 4.

【0014】以上のように構成した本実施例の作用につ
いて次に説明する。先ず、蒸発物質容器5に蒸発物質M
を入れ、基材保持具6に基材Wを取付けて真空装置によ
り真空容器2内の真空引きを行う。次に、窓部材4を通
してレーザ光を蒸発物質Mに照射する。レーザ光により
蒸発物質Mが蒸発し、蒸発粒子が基材Wの表面に付着し
て蒸着膜が形成される。
The operation of this embodiment having the above-mentioned structure will be described below. First, the evaporation material M is placed in the evaporation material container 5.
Then, the base material W is attached to the base material holder 6, and the inside of the vacuum container 2 is evacuated by a vacuum device. Next, the evaporation material M is irradiated with laser light through the window member 4. The evaporation material M is evaporated by the laser light, and the evaporated particles adhere to the surface of the base material W to form a vapor deposition film.

【0015】一方、蒸発粒子は、真空容器2の内壁およ
び窓部材4の内側にも付着する。窓部材4に蒸発粒子が
付着した状態で、スイッチング手段15を閉じて電極7と
電極8との間に電圧を印加すると窓部材4に付着した蒸
発粒子に電流が流れて熱が発生する。この熱により窓部
材4に付着した蒸発粒子は蒸発して除去される。なお、
窓部材4に付着した蒸発粒子の除去は、基材Wの蒸着処
理と並行して行うことができる。
On the other hand, the evaporated particles also adhere to the inner wall of the vacuum container 2 and the inside of the window member 4. When the switching means 15 is closed and a voltage is applied between the electrode 7 and the electrode 8 with the evaporated particles attached to the window member 4, a current flows through the evaporated particles attached to the window member 4 to generate heat. Due to this heat, the evaporation particles attached to the window member 4 are evaporated and removed. In addition,
The evaporation particles attached to the window member 4 can be removed in parallel with the vapor deposition process of the substrate W.

【0016】次に、窓部材4に付着した蒸発粒子を除去
するための電圧E[v]と印加時間t[s]との関係に
ついて説明する。いま、図3に示すように、電極7と電
極8との間に幅w、厚さx[cm]の蒸発粒子の膜mが付
着しているとし、電極7、8間の距離d[cm]、蒸着膜
mの比抵抗μ[μΩcm]とすると、電極7,8間の抵抗
R[Ω]は、 R=μd/wx となる。したがって、印加電圧Eによる蒸発粒子の膜m
の発熱量Q[J]は、 Q=(E2 /R)・t=(wxE2 /μd)・t となる。一方、体積V[ cm3]の蒸発粒子の膜mを蒸発
させるために必要な熱量Q1 [J]は、蒸発粒子の膜m
の密度ρ[g/cm3 ]、比熱C[J/g]、融点Tm
[K]、昇華熱q[J/g]とし、室温T0 [K]でT
=Tm −T0 とすると、 Q1 =Vρ(CT+q)=wxdρ(CT+q) となる。蒸発粒子の膜mが断熱状態と仮定すると、Q1
=Qであるから、 (wxE2 /μd)・t=wxdρ(CT+q) である。したがって、 E2 =μρ(CT+q)d2 /t となる。
Next, the relationship between the voltage E [v] for removing the evaporated particles adhering to the window member 4 and the application time t [s] will be described. Now, as shown in FIG. 3, assuming that a film m of evaporated particles having a width w and a thickness x [cm] is attached between the electrodes 7 and 8, the distance d [cm] between the electrodes 7 and 8 is assumed. ], And the specific resistance μ [μΩcm] of the deposited film m, the resistance R [Ω] between the electrodes 7 and 8 is R = μd / wx. Therefore, the film m of the vaporized particles due to the applied voltage E
The heat generation amount Q [J] of is: Q = (E 2 / R) t = (wxE 2 / μd) t On the other hand, the heat quantity Q 1 [J] required to evaporate the film m of the vaporized particles having a volume V [cm 3 ] is equal to the film m of the vaporized particles.
Density ρ [g / cm 3 ], specific heat C [J / g], melting point T m
[K], heat of sublimation q [J / g], and T at room temperature T 0 [K]
= T m −T 0 , Q 1 = Vρ (CT + q) = wxdρ (CT + q). Assuming that the film m of evaporated particles is adiabatic, Q 1
= Q, (wxE 2 / μd) · t = wxdρ (CT + q). Therefore, E 2 = μρ (CT + q) d 2 / t.

【0017】ここで、蒸発物質Mが鉄である場合を例に
とると、ρ=7.87[g/cm3 ]、μ=100[μΩ
cm]、C=0.80[J/g]、T=1500[K]、
q=6.53×10-3[J/g]であるから、 E2 =0.94×d2 /t となる。したがって、電極7,8間の距離dをd=1
[cm]とすれば、電源14の電圧E[v]と印加時間t
[s]との関係は、 E2 =0.94/t となる。ここで、印加時間tをt=1[s]とすれば、
電源14の電圧EはE=0.97[v]となる。この時の
発熱量Qは、w=3[cm]、x=1×10-7[cm]とす
れば、Q=0.003[J]と僅かであり、この発熱に
より電極7,8および窓部材4が損傷することはない。
Here, taking the case where the evaporation material M is iron as an example, ρ = 7.87 [g / cm 3 ] and μ = 100 [μΩ
cm], C = 0.80 [J / g], T = 1500 [K],
Since q = 6.53 × 10 −3 [J / g], E 2 = 0.94 × d 2 / t. Therefore, the distance d between the electrodes 7 and 8 is d = 1.
If [cm], the voltage E [v] of the power supply 14 and the application time t
The relationship with [s] is E 2 = 0.94 / t. Here, if the application time t is t = 1 [s],
The voltage E of the power supply 14 is E = 0.97 [v]. The heat generation amount Q at this time is as small as Q = 0.003 [J] if w = 3 [cm] and x = 1 × 10 −7 [cm], and this heat generation causes the electrodes 7, 8 and The window member 4 is not damaged.

【0018】蒸発物質Mが鉄、ニッケル、コバルトの場
合において、印加電圧をE=10〜50[v]、印加時
間をt=0.001〜1[s]として、実際に窓部材4
に付着した蒸発粒子の除去を行ったときの窓部材4の汚
れおよび損傷の状況を図4に示す。
When the evaporation material M is iron, nickel or cobalt, the applied voltage is E = 10 to 50 [v] and the applied time is t = 0.001 to 1 [s], and the window member 4 is actually used.
FIG. 4 shows the state of stains and damages on the window member 4 when the evaporated particles attached to the are removed.

【0019】以上のように、電極7と電極8とに断続的
に電圧を印加することにより窓部材4を清浄な状態に保
つことができる。また、印加電圧Eを大きくして印加時
間tを短くするほど窓部材の損傷が小さくなる。
As described above, the window member 4 can be kept in a clean state by intermittently applying a voltage to the electrodes 7 and 8. Further, the damage of the window member becomes smaller as the applied voltage E is increased and the application time t is shortened.

【0020】なお、上記実施例においては、窓部材は透
明と記載したが、これは、レーザ光の波長において光学
的に透明であればよく、この種の分野で使用できるもの
として、例えば、CO2 レーザではKCl 、ZnSe、エキシマ
レーザではMgF2、合成石英などがあげられる。また、窓
部材は、部材全体が絶縁体である必要はなく、蒸発粒子
が付着する面のみ絶縁体で形成されていてもよい。窓部
材に取付ける電極は、真空容器内に設ける必要はなく、
適切なシール手段を必要とするが、真空容器の外側より
窓部材を貫通させて設けてもよい。電極に印加する電圧
は、窓部材への蒸発粒子の付着量が或る量となったとき
印加する断続方式でもよく、また連続方式でもよい。
Although the window member is described as transparent in the above-mentioned embodiments, it may be optically transparent at the wavelength of the laser beam and can be used in this kind of field, for example, CO the 2 laser KCl, ZnSe, MgF 2, and synthetic quartz and the like is an excimer laser. Further, the window member does not need to be an insulator as a whole, and may be formed of an insulator only on the surface to which the vaporized particles adhere. The electrode attached to the window member does not need to be provided in the vacuum container,
Although an appropriate sealing means is required, the window member may be provided so as to penetrate from the outside of the vacuum container. The voltage applied to the electrodes may be an intermittent method or a continuous method that is applied when the amount of vaporized particles attached to the window member reaches a certain amount.

【0021】[0021]

【発明の効果】以上詳述したように、本発明のレーザ蒸
着装置は、真空容器の窓部材に電極を取付け、電極間に
電圧を印加するようにしたことにより、窓部材に付着し
た蒸発粒子が蒸発して除去される。その結果、窓部材が
清浄な状態となるので安定して連続的に蒸着を行うこと
ができる。さらに、蒸着処理と並行して窓部材に付着し
た蒸発粒子の除去を行うことができるので、途中で蒸着
を止めることなく長時間の蒸着処理を行うことができ蒸
着処理効率が向上するという優れた効果を奏する。
As described above in detail, in the laser vapor deposition apparatus of the present invention, the electrodes are attached to the window member of the vacuum container, and the voltage is applied between the electrodes. Are evaporated and removed. As a result, the window member is in a clean state, and stable and continuous vapor deposition can be performed. Further, since it is possible to remove the vaporized particles attached to the window member in parallel with the vapor deposition process, it is possible to perform the vapor deposition process for a long time without stopping the vapor deposition on the way, which is excellent in that the vapor deposition process efficiency is improved. Produce an effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の要部の縦断面図である。FIG. 1 is a vertical cross-sectional view of a main part of an embodiment of the present invention.

【図2】本発明の一実施例のレーザ蒸着装置全体の模式
図である。
FIG. 2 is a schematic diagram of the entire laser vapor deposition apparatus according to an embodiment of the present invention.

【図3】図1の装置の窓部材に付着した蒸発粒子の膜お
よび電極を示す説明図である。
FIG. 3 is an explanatory view showing a film of evaporated particles and electrodes attached to a window member of the apparatus of FIG.

【図4】図1のレーザ蒸着装置における、印加電圧、印
加時間、窓部材の状況を示す表である。
FIG. 4 is a table showing applied voltages, application times, and conditions of window members in the laser deposition apparatus of FIG.

【符号の説明】[Explanation of symbols]

1 レーザ蒸着装置 2 真空容器 3 開口 4 窓部材 7,8 電極 14 電源 15 スイッチング手段 M 蒸発物質 W 基材 1 Laser Vapor Deposition Device 2 Vacuum Container 3 Opening 4 Window Member 7,8 Electrode 14 Power Supply 15 Switching Means M Evaporated Material W Base Material

Claims (1)

【特許請求の範囲】 【請求項1】 真空容器に設けられたレーザ光入射窓に
レーザ光を透過しうる絶縁体からなる窓部材を装着し、
該窓部材に電極を取付け、該電極をスイッチング手段を
介して電源に接続したことを特徴とするレーザ蒸着装
置。
Claim: What is claimed is: 1. A window member made of an insulator capable of transmitting laser light is attached to a laser light incident window provided in a vacuum container,
An electrode is attached to the window member, and the electrode is connected to a power source via a switching means.
JP20754091A 1991-07-24 1991-07-24 Laser vapor-deposition device Pending JPH0533125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20754091A JPH0533125A (en) 1991-07-24 1991-07-24 Laser vapor-deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20754091A JPH0533125A (en) 1991-07-24 1991-07-24 Laser vapor-deposition device

Publications (1)

Publication Number Publication Date
JPH0533125A true JPH0533125A (en) 1993-02-09

Family

ID=16541423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20754091A Pending JPH0533125A (en) 1991-07-24 1991-07-24 Laser vapor-deposition device

Country Status (1)

Country Link
JP (1) JPH0533125A (en)

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