JPH0532909B2 - - Google Patents
Info
- Publication number
- JPH0532909B2 JPH0532909B2 JP2064882A JP6488290A JPH0532909B2 JP H0532909 B2 JPH0532909 B2 JP H0532909B2 JP 2064882 A JP2064882 A JP 2064882A JP 6488290 A JP6488290 A JP 6488290A JP H0532909 B2 JPH0532909 B2 JP H0532909B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- substrate
- electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2064882A JPH02290061A (ja) | 1990-03-15 | 1990-03-15 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2064882A JPH02290061A (ja) | 1990-03-15 | 1990-03-15 | 半導体装置の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55141316A Division JPS5764965A (en) | 1980-10-08 | 1980-10-08 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02290061A JPH02290061A (ja) | 1990-11-29 |
| JPH0532909B2 true JPH0532909B2 (enExample) | 1993-05-18 |
Family
ID=13270924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2064882A Granted JPH02290061A (ja) | 1990-03-15 | 1990-03-15 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02290061A (enExample) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5764965A (en) * | 1980-10-08 | 1982-04-20 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
-
1990
- 1990-03-15 JP JP2064882A patent/JPH02290061A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02290061A (ja) | 1990-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4645563A (en) | Method of manufacturing GaAs field effect transistor | |
| JPH045265B2 (enExample) | ||
| US5969393A (en) | Semiconductor device and method of manufacture of the same | |
| JPS6249750B2 (enExample) | ||
| JPH11354756A (ja) | 半導体装置及びその製造方法 | |
| JPH0237106B2 (enExample) | ||
| US5780345A (en) | Semiconductor device and method for forming the same | |
| JPH03136275A (ja) | 半導体装置 | |
| JPH0532909B2 (enExample) | ||
| JPH0237107B2 (enExample) | ||
| JPH0234171B2 (enExample) | ||
| JPH0432548B2 (enExample) | ||
| JP3054178B2 (ja) | 絶縁ゲイト型電界効果半導体装置 | |
| JP3352999B2 (ja) | 縦チャネル型絶縁ゲイト型電界効果半導体装置の作製方法 | |
| JP2877586B2 (ja) | 半導体集積回路およびその作製方法 | |
| JPH0492473A (ja) | 縦チャネル型絶縁ゲイト型電界効果半導体装置の作製方法 | |
| JPS6360544B2 (enExample) | ||
| JPH04218971A (ja) | 縦チャネル型絶縁ゲイト型電界効果半導体装置の作製方法 | |
| JPH0433141B2 (enExample) | ||
| JPH02290063A (ja) | 半導体装置 | |
| JPH09237897A (ja) | 絶縁ゲイト型電界効果半導体装置 | |
| KR920002517B1 (ko) | 이중측벽 기술에 의한 bpldd 구조의 금속-반도체 전계효과트랜지스터 및 그의 제조방법 | |
| KR960011472B1 (ko) | 반도체 기억장치 제조방법 | |
| JP2627970B2 (ja) | 縦チャネル型絶縁ゲイト型電界効果半導体装置の作製方法 | |
| JP2990231B2 (ja) | 縦チャネル型絶縁ゲイト型電界効果半導体装置の作製方法 |