JPH05326351A - Semiconductor manufacturing jig and manufacutre of semiconductor element - Google Patents

Semiconductor manufacturing jig and manufacutre of semiconductor element

Info

Publication number
JPH05326351A
JPH05326351A JP14870592A JP14870592A JPH05326351A JP H05326351 A JPH05326351 A JP H05326351A JP 14870592 A JP14870592 A JP 14870592A JP 14870592 A JP14870592 A JP 14870592A JP H05326351 A JPH05326351 A JP H05326351A
Authority
JP
Japan
Prior art keywords
reinforcing plate
wafer
jig
semiconductor element
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14870592A
Other languages
Japanese (ja)
Inventor
Kazunori Taguchi
和則 田口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14870592A priority Critical patent/JPH05326351A/en
Publication of JPH05326351A publication Critical patent/JPH05326351A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To prevent crack of a silicon wafer occurring at the time of alloying of the wafer and a reinforcing plate, contamination of a semiconductor element and to improve operability. CONSTITUTION:A reinforcing plate 2 and a wafer 3 are positioned and fixed by using a jig 8 having a recess 81 for fixing the plate 2 and a positioning member 5 mounted in the jig 8 to position the wafer 3. Thus, crack of the wafer is eliminated, and contamination of a semiconductor element with mineral oil is obviated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体製造治具及び
半導体素子の製造方法に関し、特に圧接型の半導体製造
治具及びこれを用いた半導体素子の製造方法に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing jig and a semiconductor element manufacturing method, and more particularly to a pressure contact type semiconductor manufacturing jig and a semiconductor element manufacturing method using the same.

【0002】[0002]

【従来の技術】電力用半導体素子等の構造に於いて、シ
リコンウエハを補強し電極を取り出す必要がある為、シ
リコンウエハの片面及び、モリブデンからなる補強板の
片面にロー材としてアルミ蒸着膜を形成し、これら両面
を重ね合わせて真空中で約700℃に加熱し合金化する
方法が用いられている。
2. Description of the Related Art In a structure such as a power semiconductor element, it is necessary to reinforce a silicon wafer and take out an electrode. Therefore, an aluminum deposition film is used as a brazing material on one surface of the silicon wafer and one surface of a reinforcing plate made of molybdenum. A method is used in which they are formed, then both surfaces are superposed and heated to about 700 ° C. in a vacuum to alloy them.

【0003】図2に従来の半導体製造治具の断面図を示
す。図2において、1はカーボンにコーティングを施し
た位置決め固定治具、2はモリブデン(Mo)からなる
補強板でありその片面にAl蒸着層4aが形成されてい
る。3はシリコンウエハであり、上記補強板2と対向す
る面にはAl蒸着層4bが形成されている。
FIG. 2 shows a sectional view of a conventional semiconductor manufacturing jig. In FIG. 2, reference numeral 1 is a positioning fixing jig coated with carbon, and 2 is a reinforcing plate made of molybdenum (Mo), and an Al vapor deposition layer 4a is formed on one surface of the reinforcing plate. 3 is a silicon wafer, and an Al vapor deposition layer 4b is formed on the surface facing the reinforcing plate 2.

【0004】上記構成において、Moからなる補強板2
の直径はシリコンウエハ3の直径よりも大きくなるよう
に設計されており、これは合金形成時に流れ出た余分な
ロー材(ここではAl)が治具内壁面と密着し、合金取
り出しの際にシリコンウエハ3が欠けることを防止する
目的である。その為シリコンウエハ3とMoからなる補
強板2との同軸度を得る為に、位置決め固定治具の内壁
面に凹部61を設けている。この凹部61の深さは、補
強板2とシリコンウエハ3を密着させて合金形成を行う
ため、シリウエハ3の厚さより浅くなければならない。
また固定治具6の内壁面には補強板2を位置合せするた
めの段差部62が形成され、さらに治具下方には上記補
強板2の直径よりやや径の小さい凸部63が形成されて
いる。この凸部63は、合金形成時に同一構成の他の治
具上方から補強板2を押圧するためのものである。なお
64は上記凹部61を形成する際の加工工程で形成され
た溝であり、凹部61のエッジがテーパ状になるのを防
止している。
In the above structure, the reinforcing plate 2 made of Mo is used.
Is designed to be larger than the diameter of the silicon wafer 3. This is because the extra brazing material (Al in this case) that flows out during alloy formation adheres to the inner wall surface of the jig and the silicon is removed when the alloy is taken out. The purpose is to prevent the wafer 3 from being chipped. Therefore, in order to obtain the coaxiality between the silicon wafer 3 and the reinforcing plate 2 made of Mo, the recess 61 is provided on the inner wall surface of the positioning and fixing jig. The depth of the recess 61 must be shallower than the thickness of the silicon wafer 3 in order to bring the reinforcing plate 2 and the silicon wafer 3 into close contact with each other to form an alloy.
Further, a step portion 62 for aligning the reinforcing plate 2 is formed on the inner wall surface of the fixing jig 6, and a convex portion 63 having a diameter slightly smaller than the diameter of the reinforcing plate 2 is formed below the jig. There is. The convex portion 63 is for pressing the reinforcing plate 2 from above another jig having the same configuration when forming the alloy. Reference numeral 64 is a groove formed in the processing step of forming the recess 61, which prevents the edge of the recess 61 from being tapered.

【0005】以下、上記位置決め固定治具を用いた合金
の組立順序を説明する。まず、カーボンにコーティング
を施した部材を用いて構成され、その内部にシリコンウ
エハ3を固定する凹部61,補強板2を位置合せする段
差部62,外部に補強板2を密着させる為の凸部63を
備えた位置決め固定治具6を用意する。そして治具6の
凹部61へAl蒸着層4bが形成されたシリコンウエハ
3をAl蒸着層4bを上にして入れる。
Hereinafter, the order of assembling the alloy using the above positioning and fixing jig will be described. First, a carbon coating member is used, and a concave portion 61 for fixing the silicon wafer 3 therein, a step portion 62 for aligning the reinforcing plate 2 and a convex portion for closely adhering the reinforcing plate 2 to the outside are formed. A positioning and fixing jig 6 including 63 is prepared. Then, the silicon wafer 3 on which the Al vapor deposition layer 4b is formed is placed in the recess 61 of the jig 6 with the Al vapor deposition layer 4b facing upward.

【0006】次にAl蒸着層4bが形成された補強板2
をAl蒸着層4bを下にして治具6の段差部62へ入
れ、両Al蒸着層6a,6bを重ねる。次に補強板2と
シリコンウエハ3とを密着させる為、もう1つの位置決
め固定治具(図示せず)の凸部を補強板2の上へ装着し
以下同様に組立を行い、複数の治具を重ね合わせた状態
で加熱して両部材間のAl蒸着層4a,4bを溶融して
合金化を行う。
Next, the reinforcing plate 2 having the Al vapor deposition layer 4b formed thereon.
Is placed in the step portion 62 of the jig 6 with the Al vapor deposition layer 4b facing down, and both Al vapor deposition layers 6a and 6b are overlapped. Next, in order to bring the reinforcing plate 2 and the silicon wafer 3 into close contact with each other, the convex portion of another positioning and fixing jig (not shown) is mounted on the reinforcing plate 2, and the assembly is performed in the same manner. Are heated in an overlapping state to melt the Al vapor-deposited layers 4a and 4b between both members to alloy them.

【0007】しかし、シリコンウエハ3が拡散工程,A
l蒸着工程によりその厚み以上にAl蒸着層を上にして
凹状に反った場合、段差部62へシリコンウエハ3が乗
り上げて位置決めができず、この状態で補強板2をセッ
トして押圧するとシリコンウエハ3が割れることがあ
る。
However, the silicon wafer 3 is subjected to the diffusion process, A
l When the Al vapor deposition layer is warped in a concave shape with the Al vapor deposition layer upward by more than the thickness in the vapor deposition step, the silicon wafer 3 rides on the stepped portion 62 and positioning cannot be performed, and when the reinforcing plate 2 is set and pressed in this state, the silicon wafer 3 may be broken.

【0008】このような問題点に対する解決策として第
3図の合金治具組立方法が提案されている。図におい
て、1はカーボンにコーティングを施した部材を用いて
構成され、その内部に補強板2を固定するための凹部1
1を有し、外部下方に組立時に他の治具に押圧力を印加
するための凸部12を有する位置決め固定治具である。
As a solution to such a problem, the alloy jig assembling method of FIG. 3 has been proposed. In the figure, reference numeral 1 indicates a concave portion 1 for fixing a reinforcing plate 2 therein, which is formed by using a member coated with carbon.
1 is a positioning and fixing jig that has a convex portion 12 for applying a pressing force to another jig at the time of assembly on the lower side of the outside.

【0009】以下、図3の位置決め固定治具を用いた合
金の組立順序を説明する。上述したような構造を有する
固定治具1を用意し、この凹部11にAl蒸着層4aが
形成された補強板2をAl蒸着層4aを上にして入れ
る。次いでシリコンウエハ3と補強板2との位置合せの
為、ミネラルオイル膜7をAl蒸着層4aの上に形成
し、Al蒸着層4bを下にしてシリコンウエハ3が補強
板2と同軸になるようにミネラルオイル膜7を介して接
着する。次に補強板2とシリコンウエハ3とを密着させ
る為、図示しないもう1つの固定治具の凸部をシリコン
ウエハ3の上へ装着し以下同様の組立を行い、複数の固
定治具を積層した状態で加熱して合金化を行う。
The order of assembling the alloy using the positioning and fixing jig shown in FIG. 3 will be described below. The fixing jig 1 having the above-described structure is prepared, and the reinforcing plate 2 having the Al vapor deposition layer 4a formed therein is placed in the recess 11 with the Al vapor deposition layer 4a facing upward. Next, in order to align the silicon wafer 3 and the reinforcing plate 2, a mineral oil film 7 is formed on the Al vapor deposition layer 4a, and the Al vapor deposition layer 4b is placed downward so that the silicon wafer 3 is coaxial with the reinforcing plate 2. Is adhered to the surface through the mineral oil film 7. Next, in order to bring the reinforcing plate 2 and the silicon wafer 3 into close contact with each other, a convex portion of another fixing jig (not shown) is mounted on the silicon wafer 3 and the same assembly is performed thereafter to stack a plurality of fixing jigs. It heats in the state and alloys.

【0010】しかし、このような合金治具組立方法にお
いては、補強板2とシリコンウエハ3とのズレが生じや
すく、またミネラルオイル膜7による半導体素子への汚
染があり、作業性も悪いという問題があった。
However, in such an alloy jig assembling method, a deviation between the reinforcing plate 2 and the silicon wafer 3 is likely to occur, and the semiconductor element is contaminated by the mineral oil film 7, resulting in poor workability. was there.

【0011】[0011]

【発明が解決しようとする課題】従来の半導体製造治具
及び半導体素子の製造方法は以上のように構成されてお
り、図2の合金治具を用いた組立方法では、薄いシリコ
ンウエハを使用する場合のシリコンウエハの反り返りの
ため位置ズレが生じてシリコンウエハが治具の段差部を
乗り上げて補強板2との間に入り込み、シリコンウエハ
が割れるという問題点があった。また、図3の合金治具
を用いた組立方法では、ミネラルオイル膜でシリコンウ
エハと補強板とが固定される為、ズレに弱く、またミネ
ラルオイル膜による半導体素子への汚染が生じ作業性も
悪いという問題点があった。
The conventional semiconductor manufacturing jig and semiconductor element manufacturing method are configured as described above. In the assembly method using the alloy jig shown in FIG. 2, a thin silicon wafer is used. In this case, there is a problem in that the silicon wafer is warped to cause a positional deviation, the silicon wafer rides on the stepped portion of the jig and enters between the reinforcing plate 2 and the silicon wafer to be broken. Further, in the assembling method using the alloy jig shown in FIG. 3, since the silicon wafer and the reinforcing plate are fixed by the mineral oil film, the deviation is weak and the semiconductor element is contaminated by the mineral oil film, and the workability is also improved. There was a problem that it was bad.

【0012】この発明は上記のような問題点を解消する
為になされたもので、シリコンウエハと補強板の同軸度
を得ると共に、ミネラルオイル膜による半導体素子への
汚染を防止し、作業性も向上させることができる半導体
製造治具及び半導体素子の製造方法を得ることを目的と
する。
The present invention has been made in order to solve the above-mentioned problems, and obtains the coaxiality between the silicon wafer and the reinforcing plate, prevents the semiconductor element from being contaminated by the mineral oil film, and has good workability. An object of the present invention is to obtain a semiconductor manufacturing jig and a semiconductor element manufacturing method that can be improved.

【0013】[0013]

【課題を解決するための手段】この発明に係る半導体製
造治具は、その内部に補強板を固定するための凹部を有
する治具本体と、上記治具本体に固定された補強板に装
着され、該補強板上方にウエハを載置してこれを位置決
めするための開口を有する位置決め部材とを用いて上記
補強板とウエハとの位置決めを行うようにしたものであ
る。
A semiconductor manufacturing jig according to the present invention is mounted on a jig main body having a recess for fixing a reinforcing plate therein and a reinforcing plate fixed to the jig main body. The reinforcing plate and the wafer are positioned by using a positioning member having an opening for mounting the wafer on the reinforcing plate and positioning the wafer.

【0014】またこの発明に係る半導体素子の製造方法
は、その外部下方に凸部を有する治具本体内部の凹部へ
ロー材を蒸着した補強板を配置し、段差部を有するリン
グ状の位置決め部材を補強板へ装着し、さらに上記リン
グ状の位置決め部材の開口にロー材を蒸着したウエハを
載置した後、上記治具本体と同一構成の他の治具本体の
外部下方の凸部を上記ウエハに重ねて密着させて合金化
を行うようにしたものである。
Further, in the method for manufacturing a semiconductor element according to the present invention, a reinforcing plate having a brazing material deposited thereon is arranged in a concave portion inside a jig body having a convex portion on the outside and a ring-shaped positioning member having a step portion. After mounting the wafer on which the brazing material has been vapor-deposited in the opening of the ring-shaped positioning member, the convex portion below the outside of another jig body having the same configuration as the jig body is An alloy is formed by stacking and closely adhering on a wafer.

【0015】[0015]

【作用】この発明においては、従来、単一の位置決め固
定治具により補強板とウエハとを固定していたものを、
固定治具本体の凹部で補強板を固定し、補強板に装着さ
れる位置決め部材でウエハの補強板に対する位置を決め
るようにしたので、ウエハにその厚み以上の反りが生じ
ても、合金形成時にウエハが破損することなく同軸度を
得ることができ、またミネラルオイルによる半導体素子
の汚染の問題もなくなる。
According to the present invention, conventionally, the reinforcing plate and the wafer are fixed by a single positioning and fixing jig.
Since the reinforcing plate is fixed in the recess of the fixing jig main body, and the position of the wafer with respect to the reinforcing plate is determined by the positioning member attached to the reinforcing plate, even if the wafer is warped more than its thickness, it will be formed during alloy formation. The coaxiality can be obtained without damaging the wafer, and the problem of contamination of the semiconductor element with mineral oil is eliminated.

【0016】[0016]

【実施例】以下、この発明の一実施例による半導体製造
治具及び半導体素子の製造方法を図1に基づいて説明す
る。図1において、図2及び図3と同一符号は同一また
は相当部分を示し、5はカーボンにコーティングを施し
た位置決め部材であり、ウエハ3よりもやや小さい開口
51を有し、該開口52下方内周面には段差部52が形
成されている。また8はカーボンにコーティングを施し
た位置決め固定治具(治具本体)であり、その内部に補
強板2を固定する為の凹部81及び位置決め部材5を装
備するための段差部82が設けられ、かつ外部下方に合
金形成時に他の治具にセットされたシリコンウエハを押
圧して密着させる為の凸部83が設けられている。上記
凹部81の深さは補強板2の厚みよりも浅く、また段差
部82の高さは、Al蒸着4aを形成した補強板2の厚
みより低く、位置決め治具5を装着した際、固定治具8
(段差部82)に接触せず隙間を保つ範囲に設計されて
いる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor manufacturing jig and a semiconductor element manufacturing method according to an embodiment of the present invention will be described below with reference to FIG. In FIG. 1, the same reference numerals as those in FIGS. 2 and 3 denote the same or corresponding portions, and 5 is a positioning member having a coating of carbon, which has an opening 51 slightly smaller than the wafer 3 and is located below the opening 52. A step portion 52 is formed on the peripheral surface. Reference numeral 8 denotes a positioning fixing jig (jig body) coated with carbon, in which a concave portion 81 for fixing the reinforcing plate 2 and a step portion 82 for mounting the positioning member 5 are provided. Further, a convex portion 83 for pressing and closely adhering a silicon wafer set on another jig at the time of alloy formation is provided below the outside. The depth of the recess 81 is shallower than the thickness of the reinforcing plate 2, and the height of the stepped portion 82 is lower than the thickness of the reinforcing plate 2 on which the Al vapor deposition 4a is formed. Ingredient 8
It is designed in such a range that a gap is maintained without coming into contact with the (stepped portion 82).

【0017】次に、図1の治具を用いた合金の組立順序
を説明する。固定治具8の凹部81へAl蒸着層4aが
形成された補強板2を、Al蒸着層4aを上にして入
れ、さらにウエハ上面と接触する段部52を有する位置
決め部材5を装備する。
Next, the order of assembling the alloy using the jig shown in FIG. 1 will be described. The reinforcing plate 2 on which the Al vapor deposition layer 4a is formed is placed in the recess 81 of the fixing jig 8 with the Al vapor deposition layer 4a facing upward, and the positioning member 5 having the step portion 52 that comes into contact with the upper surface of the wafer is provided.

【0018】次に位置決め部材5の開口部51にシリコ
ンウエハ3を、Al蒸着層4bを下にして載置し、補強
板2側のAl蒸着層4aに重ねる。このとき位置決め部
材5のシリコンウエハ3が入る開口部51の肉厚はシリ
コンウエハ3の厚みに制約されないので、シリコンウエ
ハ3の厚みに対して十分余裕を持たせたものでよい。
Next, the silicon wafer 3 is placed in the opening 51 of the positioning member 5 with the Al vapor deposition layer 4b facing down, and is overlaid on the Al vapor deposition layer 4a on the reinforcing plate 2 side. At this time, the thickness of the opening portion 51 of the positioning member 5 into which the silicon wafer 3 is inserted is not restricted by the thickness of the silicon wafer 3, so that a sufficient margin may be given to the thickness of the silicon wafer 3.

【0019】次にシリコンウエハ3を補強板2と密着さ
せる為、もう1つの治具8aの凸部83aをシリコンウ
エハ3の上へ装着して上に積み重ねていき、真空中で加
熱し合金化を行う。
Next, in order to bring the silicon wafer 3 into close contact with the reinforcing plate 2, the convex portion 83a of the other jig 8a is mounted on the silicon wafer 3 and stacked on top of it, and heated in a vacuum to be alloyed. I do.

【0020】このように本実施例によれば、治具本体8
の凹部81により補強板2を固定し、補強板2に装着さ
れた位置決め部材5の開口部51にウエハ3を載置して
ウエハ3と補強板2との位置決めを行うようにしたの
で、ウエハ3が比較的大きく反り返っていてもウエハを
破損することなく補強板2と精度のよい同軸度を得るこ
とができ、またミネラルオイルを用いないため半導体素
子が汚染される心配もない。
As described above, according to this embodiment, the jig body 8
Since the reinforcing plate 2 is fixed by the concave portion 81 of the wafer 3 and the wafer 3 is placed in the opening 51 of the positioning member 5 mounted on the reinforcing plate 2, the wafer 3 and the reinforcing plate 2 are positioned. Even if 3 is relatively warped, it is possible to obtain a precise coaxiality with the reinforcing plate 2 without damaging the wafer, and since mineral oil is not used, there is no concern that the semiconductor element is contaminated.

【0021】[0021]

【発明の効果】以上のように、この発明によれば、補強
板とウエハとを別々の部材を用いて固定する構成とし、
補強板を固定してからウエハを装着固定するようにした
ので、ウエハ厚以上の反りが生じてもウエハの割れ、半
導体素子への汚染が発生せず合金ができるとともに、作
業性の向上を図ることができる効果がある。
As described above, according to the present invention, the reinforcing plate and the wafer are fixed using separate members,
Since the reinforcing plate is fixed and then the wafer is mounted and fixed, even if a warp more than the thickness of the wafer occurs, the wafer can be alloyed without cracking of the wafer and contamination of semiconductor elements, and workability is improved. There is an effect that can be.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例による半導体製造治具の構
成図。
FIG. 1 is a configuration diagram of a semiconductor manufacturing jig according to an embodiment of the present invention.

【図2】従来の半導体製造治具の構成図。FIG. 2 is a configuration diagram of a conventional semiconductor manufacturing jig.

【図3】従来の他の半導体製造治具の構成図。FIG. 3 is a configuration diagram of another conventional semiconductor manufacturing jig.

【符号の説明】 1 固定治具本体 2 補強板 3 シリコンウエハ 4a Al蒸着層 4b Al蒸着層 5 位置決め部材 51 開口部 52 段差部 6 位置決め固定治具 7 ミネラルオイル膜 8 固定治具本体 8a 他の治具本体 81 凹部 82 段部 83 凸部 83a 他の治具本体の凸部[Explanation of reference numerals] 1 fixing jig main body 2 reinforcing plate 3 silicon wafer 4a Al vapor deposition layer 4b Al vapor deposition layer 5 positioning member 51 opening 52 step difference 6 positioning fixing jig 7 mineral oil film 8 fixing jig main body 8a other Jig main body 81 Recessed portion 82 Stepped portion 83 Convex portion 83a Convex portion of other jig main body

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体素子を有するウエハと補強板とを
ロー材を用いて合金化するする工程で使用される半導体
製造治具において、 その内部に補強板を固定するための凹部を有する治具本
体と、 上記治具本体に固定された補強板に装着され、該補強板
上方にウエハを載置してこれを位置決めするための開口
を有する位置決め部材とを用いて上記補強板とウエハと
の位置決めを行うことを特徴とする半導体製造治具。
1. A semiconductor manufacturing jig used in the step of alloying a wafer having a semiconductor element and a reinforcing plate with a brazing material, wherein the jig has a recess for fixing the reinforcing plate therein. Using the main body and a positioning member mounted on the reinforcing plate fixed to the jig main body and having an opening for mounting the wafer on the reinforcing plate and positioning the wafer, the reinforcing plate and the wafer are separated. A semiconductor manufacturing jig characterized by performing positioning.
【請求項2】 半導体素子を有するウエハと補強板とを
ロー材を用いて合金化する工程を有する半導体素子の製
造方法において、 その外部下方に凸部を有する治具本体内部の凹部へロー
材を蒸着した補強板を配置する工程と、 段差部を有するリング状の位置決め部材を上記補強板へ
装着する工程と、 上記リング状の位置決め部材の開口に、ロー材を蒸着し
たウエハを載置する工程と、 上記治具本体と同一構成の他の治具本体の外部下方の凸
部を上記ウエハに重ねて密着させて合金化を行う工程と
を含むことを特徴とする半導体素子の製造方法。
2. A method of manufacturing a semiconductor element, which comprises a step of alloying a wafer having a semiconductor element and a reinforcing plate with a brazing material, wherein a brazing material is provided to a concave portion inside a jig main body having a convex portion at a lower portion outside thereof. A step of disposing a reinforcing plate having vapor deposited thereon, a step of mounting a ring-shaped positioning member having a step portion on the reinforcing plate, and a wafer having a brazing material deposited thereon being placed in the opening of the ring-shaped positioning member. A method of manufacturing a semiconductor device, comprising: a step; and a step of superimposing an outer lower convex portion of another jig main body having the same configuration as the jig main body on the wafer and closely adhering the convex portion, thereby alloying.
JP14870592A 1992-05-15 1992-05-15 Semiconductor manufacturing jig and manufacutre of semiconductor element Pending JPH05326351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14870592A JPH05326351A (en) 1992-05-15 1992-05-15 Semiconductor manufacturing jig and manufacutre of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14870592A JPH05326351A (en) 1992-05-15 1992-05-15 Semiconductor manufacturing jig and manufacutre of semiconductor element

Publications (1)

Publication Number Publication Date
JPH05326351A true JPH05326351A (en) 1993-12-10

Family

ID=15458756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14870592A Pending JPH05326351A (en) 1992-05-15 1992-05-15 Semiconductor manufacturing jig and manufacutre of semiconductor element

Country Status (1)

Country Link
JP (1) JPH05326351A (en)

Similar Documents

Publication Publication Date Title
JP3045089B2 (en) Device package structure and method of manufacturing the same
JP2001073135A (en) Device for treating substrate
US11712745B2 (en) Semiconductor substrate support with multiple electrodes and method for making same
JPH1040584A (en) Manufacture of disk body such as optical disk
KR20060107287A (en) Anodic bonder, anodic bonding method and method of manufacturing acceleration sensor
JPH07221324A (en) Semiconductor sensor manufactured by anode coupling and its manufacture
JPH05326351A (en) Semiconductor manufacturing jig and manufacutre of semiconductor element
US9682539B2 (en) Substrate composite, method and device for bonding of substrates
JP6550198B1 (en) SiC film structure
CN114203617A (en) Electrostatic chuck and method of making same
KR102558926B1 (en) Semiconductor substrate support with multiple electrodes and method for manufacturing same
JP2002134759A (en) Acceleration sensor and manufacturing method therefor
CN217709658U (en) Wafer sputtering jig and wafer sputtering device
JP6699765B2 (en) Wafer holder
WO2023136096A1 (en) Holding device
JP2542446B2 (en) Semiconductor chip alignment equipment
JPH08124858A (en) Thick film forming method
JPH0897438A (en) Semiconductor sensor and its manufacture
JPH09246127A (en) Anode junction
JPH04112578A (en) Flat type semiconductor device
KR20230151273A (en) Oled metal mask multi-step vertical coating method
JPH1040579A (en) Optical disk and its manufacture
KR20190081169A (en) Electrostatic chuck
JPH08250448A (en) Formation of electrode for semiconductor device
JPH0273973A (en) Sputtering device