CN217709658U - Wafer sputtering jig and wafer sputtering device - Google Patents
Wafer sputtering jig and wafer sputtering device Download PDFInfo
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- CN217709658U CN217709658U CN202222079337.9U CN202222079337U CN217709658U CN 217709658 U CN217709658 U CN 217709658U CN 202222079337 U CN202222079337 U CN 202222079337U CN 217709658 U CN217709658 U CN 217709658U
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Abstract
The utility model provides a wafer sputtering jig and a wafer sputtering device, the wafer sputtering jig comprises a placing platform and a fixed pressing piece, the placing platform is provided with a bearing plane which is used for being jointed with the lower side surface of a wafer, the fixed pressing piece is arranged above the bearing plane and is used for pressing at least the edge of the upper side surface of the wafer so as to tightly press and fix the wafer on the bearing plane; the fixed pressing piece is provided with a plurality of through holes, and the plurality of through holes are used for corresponding to the plurality of metal columns arranged on the edge of the wafer one by one. Compared with the prior art, the utility model provides a wafer sputtering tool and wafer sputtering device, it can avoid the wafer from top to bottom simultaneously receive the bombardment and lead to the wafer to be punctured by the ion from top to bottom, can avoid the unusual discharge phenomenon on wafer surface simultaneously, promote sputtering efficiency to can realize the accurate positioning to the wafer.
Description
Technical Field
The utility model relates to a chip manufacturing technical field particularly, relates to a wafer sputtering tool and wafer sputtering device.
Background
With the rapid development of the semiconductor industry, wafer level packaging is divided into fan-out (fan-out) and fan-in (fan-in), a sputtering deposition technique is often used in the wafer packaging process, and sputtering deposition refers to a method of bombarding a target material with high-energy particles to sputter atoms in the target material, so as to deposit the atoms on the surface of a substrate to form a thin film. The wafer is fixed in a reaction chamber of a wafer sputtering device, and the wafer is easily broken down by ions due to the fact that the electrostatic ion bombardment process exists on the surface of the wafer in the sputtering process, so that a hidden crack point appears on the back surface of the wafer, and abnormal discharge phenomena such as arc discharge (arc) and the like are easily formed on the surface of the wafer, so that the normal operation of the wafer is influenced, and the yield is reduced. Meanwhile, the conventional wafer jig has insufficient circumferential positioning capability on the wafer, so that the wafer is easy to deviate, and the stable operation of a subsequent sputtering process is not facilitated.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a wafer sputtering tool and wafer sputtering device, it can avoid the wafer from top to bottom receive the bombardment simultaneously and lead to the wafer from top to bottom to be punctured by the electric ion, can avoid the unusual discharge phenomenon on wafer surface simultaneously to can realize the accurate positioning to the wafer.
The embodiment of the utility model is realized like this:
in a first aspect, the utility model provides a wafer sputtering jig, include:
the placing platform is provided with a bearing plane, and the bearing plane is used for being attached to the lower side surface of the wafer;
the fixed pressing piece is arranged above the bearing plane and is used for pressing at least the edge of the upper side surface of the wafer so as to press and fix the wafer on the bearing plane;
the fixed pressing piece is provided with a plurality of sputtering holes in a penetrating mode, and the plurality of sputtering holes are used for corresponding to the plurality of metal columns arranged on the edge of the wafer one to one.
In an optional embodiment, the fixed pressing member has a sputtering opening formed therethrough, and the sputtering opening is used to correspond to the upper surface of the wafer to expose the sputtering surface of the wafer.
In an alternative embodiment, the fixed pressing piece is annular, and the plurality of sputtering holes are distributed on the fixed pressing piece along the same circumference.
In an optional embodiment, the bearing plane has a fitting region adapted to the shape and size of the wafer, an inner diameter of the fixed pressing member is smaller than a diameter of the fitting region, and an outer diameter of the fixed pressing member is greater than or equal to the diameter of the fitting region, so that the fixed pressing member is pressed on the edge of the wafer.
In an optional embodiment, the placing platform is in a circular truncated cone shape, and the fixed pressing piece and the placing platform are placed concentrically.
In an alternative embodiment, the diameter of the placement platform is greater than or equal to the outer diameter of the fixation crimp.
In an alternative embodiment, the placing platform is an insulating platform, the fixed pressing piece is an insulating ring, and the thickness of the placing platform in the axial direction is greater than the thickness of the fixed pressing piece in the same direction.
In an optional embodiment, the placing platform is provided with a plurality of vacuum suction holes, the plurality of vacuum suction holes are communicated with the bearing plane, and the plurality of vacuum suction holes are communicated with a vacuum pipeline, so that the wafer is fixedly absorbed on the bearing plane.
In an optional implementation manner, a vacuum manifold cavity is built in the placement platform, the plurality of vacuum adsorption holes are distributed in the bearing plane in an array manner, each vacuum adsorption hole is communicated with the vacuum manifold cavity, a negative pressure joint is further arranged on the side surface of the placement platform, the vacuum manifold cavity is communicated with the negative pressure joint, and the negative pressure joint is communicated with the vacuum pipeline.
In a second aspect, the present invention provides a wafer sputtering apparatus, which comprises a reaction chamber and a wafer sputtering jig according to any one of the foregoing embodiments, wherein the wafer sputtering jig is placed in the reaction chamber.
The utility model discloses beneficial effect includes:
the utility model provides a wafer sputtering tool and wafer sputtering device, through setting up place the platform, and place the platform has a bearing plane of laminating mutually with wafer downside surface, thereby can cover the downside surface of wafer, the downside surface of static ion bombardment wafer has been avoided, utilize the edge of fixed pressfitting piece pressfitting at the upside surface of wafer simultaneously, thereby compress tightly the wafer and fix on bearing plane, wafer and bearing plane clearance are avoided appearing, thereby the downside surface of static ion bombardment wafer has further been prevented, fixed pressfitting piece pressfitting is at the edge of wafer simultaneously, also can avoid the edge of static ion bombardment wafer and cause the latent phenomenon of splitting. In addition, the edge of the wafer is also provided with a metal column, the fixed pressing piece is provided with a sputtering hole, the sputtering hole corresponds to the metal column, and the metal column and the sputtering hole can keep the same electric potential on the two side surfaces of the wafer during sputtering, so that the upper part and the lower part of the wafer are further prevented from being broken down by ions due to the bombardment of static ions on the wafer, and the phenomena of hidden cracking points and abnormal discharge on the back surface are also avoided. In addition, the sputtering holes are designed to correspond to the metal columns, the metal columns can be used as starting points of sputtering deposition, sputtering efficiency in the sputtering process is greatly improved, the sputtering holes are used as positioning points of the wafer, the sputtering holes correspond to the metal columns, and accordingly accuracy of wafer placement is improved. Compared with the prior art, the utility model provides a wafer sputtering tool and wafer sputtering device, it can avoid the wafer from top to bottom simultaneously receive the bombardment and lead to the wafer to be punctured by the electric ion from top to bottom, can avoid the unusual discharge phenomenon on wafer surface simultaneously to can realize the accurate positioning to the wafer.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a wafer sputtering jig according to a first embodiment of the present invention;
fig. 2 is an assembly view of a wafer sputtering apparatus according to a first embodiment of the present invention in a first state;
fig. 3 is an assembly view of the wafer sputtering apparatus according to the first embodiment of the present invention in a second state;
fig. 4 is a schematic structural view of the placement platform in fig. 3.
Icon:
100-wafer sputtering jig; 110-a placement platform; 111-a carrier plane; 113-vacuum adsorption holes; 115-vacuum manifold chamber; 117-negative pressure connection; 130-fixing the press part; 131-sputtering holes; 133-sputtering an opening; 200-a wafer; 210-metal posts.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without making creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate the directions or positional relationships based on the directions or positional relationships shown in the drawings, or the directions or positional relationships that the products of the present invention are usually placed when used, and are only for the convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element indicated must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
First embodiment
Referring to fig. 1 to 4, the embodiment provides a wafer sputtering fixture 100, which can prevent the wafer 200 from being bombarded up and down at the same time, so as to cause the wafer 200 to be broken down by ions, and can prevent the abnormal discharge phenomenon on the surface of the wafer 200, and can realize the accurate positioning of the wafer 200, and greatly improve the sputtering deposition efficiency.
The wafer sputtering apparatus 100 provided in this embodiment includes a placing platform 110 and a fixing pressing member 130, wherein the placing platform 110 has a carrying plane 111, the carrying plane 111 is used for being attached to the lower surface of the wafer 200, and the fixing pressing member 130 is disposed above the carrying plane 111 and is used for pressing at least the edge of the upper surface of the wafer 200, so as to press and fix the wafer 200 on the carrying plane 111; the fixed pressing piece 130 has a plurality of sputtering holes 131 formed therethrough, and the sputtering holes 131 are used to correspond to the metal posts 210 disposed on the edge of the wafer 200.
In this embodiment, the placing platform 110 may be fixedly disposed on a base, and the fixing pressing member 130 may be driven by a robot or a driving assembly, so that the fixing pressing member 130 can approach or leave the placing platform 110 within a certain range. When the wafer 200 is actually loaded, the fixed pressing member 130 is firstly away from the placing platform 110, so that the wafer 200 has a sufficient installation space, then the wafer 200 is placed on the placing platform 110, and then the fixed pressing member 130 is close to the placing platform 110 and is pressed on the edge of the wafer 200, so that the wafer 200 is firmly pressed on the placing platform 110, the fixation is realized, and the subsequent processes such as sputtering deposition or sputtering etching can be performed.
It should be noted that, in the embodiment, the metal column 210 is disposed at the edge of the wafer 200, the metal column 210 penetrates through the two side surfaces of the wafer 200, and the metal column 210 may be prepared in advance, when performing a sputtering process, the wafer 200 is placed on the placing platform 110, and the fixed pressing member 130 is pressed on, and at this time, the sputtering hole 131 of the fixed pressing member 130 corresponds to the metal column 210, so that the metal column 210 is exposed, on one hand, it can be ensured that the upper and lower side surfaces of the wafer 200 maintain an equal potential, and a problem that the upper and lower surfaces of the wafer 200 are broken down by ions due to an electrostatic ion bombardment process easily existing on the surface of the wafer 200 during the sputtering process, so that a hidden crack point occurs on the back surface of the wafer 200, and abnormal discharge phenomena such as arc discharge (arc discharge) formed on the surface of the wafer 200 are avoided, thereby affecting the normal operation of the wafer 200, and reducing the yield. Meanwhile, the structural strength of the edge of the wafer 200 can be improved by arranging the metal column 210, and the fixed pressing piece 130 is pressed on the edge of the wafer 200 and correspondingly pressed with the metal column 210, so that the phenomenon that the edge of the wafer 200 is damaged due to pressing of the fixed pressing piece 130 is avoided. On the other hand, the sputtering holes 131 correspond to the metal pillars 210, so that the metal pillars 210 are used as the starting points of the sputtering deposition in the sputtering deposition process, thereby improving the sputtering efficiency in the sputtering process.
This embodiment is through setting up place table 110, and place table 110 has a bearing plane 111 of laminating mutually with wafer 200 downside surface, thereby can cover the downside surface of wafer 200, the downside surface of wafer 200 has been avoided static ion bombardment, utilize the edge of fixed closing member 130 pressfitting at the upside surface of wafer 200 simultaneously, thereby compress tightly wafer 200 and fix on bearing plane 111, wafer 200 and bearing plane 111 clearance is avoided appearing, thereby the downside surface of wafer 200 has further been prevented static ion bombardment, fixed closing member 130 pressfitting is at the edge of wafer 200 simultaneously, also can avoid static ion bombardment the edge of wafer 200 and cause the subfissure phenomenon. In addition, the edge of the wafer 200 is further provided with a metal column 210, the fixed pressing piece 130 is provided with a sputtering hole 131, the sputtering hole 131 corresponds to the metal column 210, and during sputtering, the metal column 210 and the sputtering hole 131 can keep the same electric potential on the two side surfaces of the wafer 200, so that the wafer 200 is further prevented from being broken down by ions due to the bombardment of electrostatic ions, and the back surface is also prevented from having a hidden crack point and abnormal discharge. In addition, the sputtering holes 131 are designed to correspond to the metal pillars 210, so that the metal pillars 210 can be used as starting points for sputtering deposition, sputtering efficiency in the sputtering process is greatly improved, and the sputtering holes 131 are used as positioning points of the wafer 200, so that the sputtering holes 131 correspond to the metal pillars 210, and the placement accuracy of the wafer 200 is improved.
In the present embodiment, the fixed pressing member 130 has a sputtering opening 133 formed therethrough, and the sputtering opening 133 is configured to correspond to the upper surface of the wafer 200 to expose the sputtering surface of the wafer 200. Specifically, the sputtering opening 133 is circular, and the size of the sputtering opening 133 is smaller than that of the wafer 200, so that the sputtering surface can be exposed while the wafer 200 is pressed, and sputtering deposition or sputtering etching is facilitated.
In this embodiment, the fixing pressing member 130 is annular, and the plurality of sputtering holes 131 are distributed on the fixing pressing member 130 along the same circumference. Specifically, the fixed pressing member 130 may be made of a non-metal material, such as ceramic, and has a ring structure, which is adapted to the shape of the wafer 200, so as to ensure that the fixed pressing member 130 is only pressed on the edge region of the wafer 200, thereby ensuring uniformity of the sputtering surface, shielding the edge region of the wafer 200, and facilitating cutting in the subsequent process.
In this embodiment, the carrier plane 111 has a bonding area adapted to the shape and size of the wafer 200, the inner diameter of the fixing pressing member 130 is smaller than the diameter of the bonding area, and the outer diameter of the fixing pressing member 130 is greater than or equal to the diameter of the bonding area, so that the fixing pressing member 130 is pressed on the edge of the wafer 200. Specifically, the bonding area is circular and has the same diameter as the wafer 200, i.e., the inner diameter of the fixing pressing member 130 is smaller than the diameter of the wafer 200, and the outer diameter is greater than or equal to the diameter of the wafer 200. Preferably, the outer diameter of the fixed pressing member 130 is slightly larger than the diameter of the wafer 200, so that the edge of the wafer 200 can be pressed on the inner side of the outer edge of the fixed pressing member 130, and the fixed pressing member 130 also has a certain shielding effect to prevent the electrostatic ions from directly bombarding the edge region of the wafer 200.
In this embodiment, the placing platform 110 is in a circular truncated cone shape, and the fixing pressing element 130 is concentrically placed with the placing platform 110. Specifically, the center of the circular table, the center of the wafer 200, and the center of the fixed pressing member 130 are placed on the same line, thereby ensuring the mounting accuracy of the wafer 200.
In the present embodiment, the diameter of the placing platform 110 is greater than or equal to the outer diameter of the fixing fastener 130. Preferably, the diameter of the placing platform 110 in this embodiment is equal to the outer diameter of the fixed pressing member 130, so that the bearing plane 111 on the placing platform 110 can completely cover the lower surface of the wafer 200, thereby serving as a shielding function to prevent the electrostatic ions from bombarding the lower surface of the wafer 200.
In this embodiment, the placing platform 110 is an insulating platform, the fixing pressing member 130 is an insulating ring, and the thickness of the placing platform 110 in the axial direction is greater than the thickness of the fixing pressing member 130 in the same direction. Specifically, the placing stage 110 may be a ceramic stage, and the fixing pressing member 130 may also be a ceramic ring, which can avoid affecting the potential on the surface of the wafer 200, and at the same time, does not affect the potential balance on the surface of the wafer 200. The placing platform 110 has a large thickness in the axial direction, so that a stable supporting function can be achieved.
In the embodiment, the placing stage 110 is provided with a plurality of vacuum suction holes 113, the plurality of vacuum suction holes 113 penetrate the supporting plane 111, and the plurality of vacuum suction holes 113 are communicated with a vacuum pipeline, so that the wafer 200 is fixedly absorbed on the supporting plane 111. The wafer 200 is vacuum-adsorbed on the bearing plane 111, so that the wafer 200 can be fixed, and the stable installation of the wafer 200 is further ensured. In this embodiment, the vacuum suction may be started after the wafer 200 is positioned and adjusted.
In this embodiment, a vacuum manifold cavity 115 is built in the placing platform 110, a plurality of vacuum absorption holes 113 are distributed on the bearing plane 111 in an array manner, each vacuum absorption hole 113 is communicated with the vacuum manifold cavity 115, a negative pressure joint 117 is further disposed on a side surface of the placing platform 110, the vacuum manifold cavity 115 is communicated with the negative pressure joint 117, and the negative pressure joint 117 is communicated with a vacuum pipeline. Specifically, through setting up vacuum manifold 115 and negative pressure joint 117, can realize gas transmission, take away adsorbed gas to keep negative pressure state all the time in vacuum adsorption hole 113 department, further guaranteed the firm installation of wafer 200.
In summary, the embodiment provides a wafer sputtering apparatus 100, wherein the placing platform 110 is disposed, and the placing platform 110 has a supporting plane 111 attached to the lower surface of the wafer 200, so as to cover the lower surface of the wafer 200, thereby preventing the static ions from bombarding the lower surface of the wafer 200, and the fixing pressing member 130 is pressed on the edge of the upper surface of the wafer 200, thereby pressing and fixing the wafer 200 on the supporting plane 111, avoiding the gap between the wafer 200 and the supporting plane 111, further preventing the static ions from bombarding the lower surface of the wafer 200, and meanwhile, the fixing pressing member 130 is pressed on the edge of the wafer 200, thereby preventing the static ions from bombarding the edge of the wafer 200 and causing the subfissure phenomenon. In addition, the edge of the wafer 200 is further provided with a metal column 210, the fixed pressing piece 130 is provided with a sputtering hole 131, the sputtering hole 131 corresponds to the metal column 210, and during sputtering, the metal column 210 and the sputtering hole 131 can keep the same electric potential on the two side surfaces of the wafer 200, so that the upper and lower surfaces of the wafer 200 are further prevented from being broken down by ions due to the bombardment of electrostatic ions on the wafer 200, and the phenomena of hidden cracking points and abnormal discharge on the back surface are also avoided. In addition, the sputtering holes 131 are designed to correspond to the metal pillars 210, so that the metal pillars 210 can be used as starting points for sputtering deposition, sputtering efficiency in the sputtering process is greatly improved, and the sputtering holes 131 are used as positioning points of the wafer 200, so that the sputtering holes 131 correspond to the metal pillars 210, and the placement accuracy of the wafer 200 is improved. The wafer sputtering jig 100 and the wafer 200 sputtering apparatus provided by the embodiment can prevent the wafer 200 from being bombarded up and down at the same time to cause the wafer 200 to be broken down by the ions up and down, can prevent the abnormal discharge phenomenon on the surface of the wafer 200, and can realize the accurate positioning of the wafer 200.
Second embodiment
The present embodiment provides a wafer sputtering apparatus, which includes a reaction chamber and a wafer sputtering fixture 100, wherein the basic structure and principle of the wafer sputtering fixture 100 and the resulting technical effects are the same as those of the first embodiment, and for the sake of brief description, reference may be made to the corresponding contents in the first embodiment for the parts that are not mentioned in this embodiment.
In the present embodiment, the wafer sputtering apparatus includes a reaction chamber and a wafer sputtering apparatus 100, the wafer sputtering apparatus 100 includes a placing platform 110 and a fixing pressing member 130, the placing platform 110 has a bearing plane 111, the bearing plane 111 is used for being attached to the lower surface of the wafer 200, the fixing pressing member 130 is disposed above the bearing plane 111 and is used for pressing at least the edge of the upper surface of the wafer 200, so as to press and fix the wafer 200 on the bearing plane 111; a plurality of sputtering holes 131 are formed through the fixed pressing member 130, and the plurality of sputtering holes 131 are used for corresponding to the plurality of metal posts 210 arranged at the edge of the wafer 200 one by one. The wafer sputtering jig 100 is placed in a reaction chamber.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A wafer sputtering jig is characterized by comprising:
the placing platform is provided with a bearing plane, and the bearing plane is used for being attached to the lower side surface of the wafer;
the fixed pressing piece is arranged above the bearing plane and is used for pressing at least the edge of the upper side surface of the wafer so as to press and fix the wafer on the bearing plane;
the fixed pressing piece is provided with a plurality of sputtering holes in a penetrating mode, and the plurality of sputtering holes are used for corresponding to the plurality of metal columns arranged on the edge of the wafer one by one.
2. The wafer sputtering fixture according to claim 1, wherein the fixed pressing member has a sputtering opening formed therethrough, the sputtering opening being adapted to correspond to an upper surface of the wafer to expose a sputtering surface of the wafer.
3. The wafer sputtering jig according to claim 2, wherein the fixed pressing member is annular, and the plurality of sputtering holes are distributed on the fixed pressing member along the same circumference.
4. The wafer sputtering jig according to claim 3, wherein the bearing plane has a bonding area adapted to the shape and size of the wafer, the inner diameter of the fixing pressing member is smaller than the diameter of the bonding area, and the outer diameter of the fixing pressing member is larger than or equal to the diameter of the bonding area, so that the fixing pressing member is pressed on the edge of the wafer.
5. The wafer sputtering jig according to claim 3, wherein the placing platform is in a shape of a circular truncated cone, and the fixed pressing member is placed concentrically with the placing platform.
6. The wafer sputtering fixture according to claim 5, wherein the diameter of the placement platform is larger than or equal to the outer diameter of the fixed pressing piece.
7. The wafer sputtering jig according to claim 5, wherein the placing platform is an insulating platform, the fixed pressing piece is an insulating ring, and the thickness of the placing platform in the axial direction is greater than the thickness of the fixed pressing piece in the same direction.
8. The wafer sputtering tool according to any one of claims 1 to 7, wherein the placing platform has a plurality of vacuum suction holes, the plurality of vacuum suction holes are connected to the supporting plane, and the plurality of vacuum suction holes are connected to a vacuum pipe, so that the wafer is fixed on the supporting plane by suction.
9. The wafer sputtering jig according to claim 8, wherein a vacuum manifold chamber is disposed in the placement platform, a plurality of the vacuum holes are distributed on the bearing plane in an array manner, each of the vacuum holes is communicated with the vacuum manifold chamber, a negative pressure joint is further disposed on a side surface of the placement platform, the vacuum manifold chamber is communicated with the negative pressure joint, and the negative pressure joint is communicated with the vacuum pipeline.
10. A wafer sputtering apparatus, comprising a reaction chamber and the wafer sputtering jig according to any one of claims 1 to 9, wherein the wafer sputtering jig is placed in the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222079337.9U CN217709658U (en) | 2022-08-05 | 2022-08-05 | Wafer sputtering jig and wafer sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222079337.9U CN217709658U (en) | 2022-08-05 | 2022-08-05 | Wafer sputtering jig and wafer sputtering device |
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| Publication Number | Publication Date |
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| CN217709658U true CN217709658U (en) | 2022-11-01 |
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| CN202222079337.9U Active CN217709658U (en) | 2022-08-05 | 2022-08-05 | Wafer sputtering jig and wafer sputtering device |
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