JPH0532500A - Control of oxidizing and diffusing treatment condition under atmospheric pressure - Google Patents
Control of oxidizing and diffusing treatment condition under atmospheric pressureInfo
- Publication number
- JPH0532500A JPH0532500A JP19149591A JP19149591A JPH0532500A JP H0532500 A JPH0532500 A JP H0532500A JP 19149591 A JP19149591 A JP 19149591A JP 19149591 A JP19149591 A JP 19149591A JP H0532500 A JPH0532500 A JP H0532500A
- Authority
- JP
- Japan
- Prior art keywords
- atmospheric pressure
- change
- film thickness
- oxidizing
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、酸化・拡散処理装置の
大気圧変動に対する、酸化・拡散処理条件の制御方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of controlling oxidation / diffusion processing conditions with respect to atmospheric pressure fluctuation of an oxidation / diffusion processing apparatus.
【０００２】[0002]
【従来の技術】従来の酸化・拡散処理装置では、大気圧
の変動による膜厚の影響への対応はされていない。その
ため、設定条件を変更しないで処理を続けていると、大
気圧の変化により酸化膜厚も変化し、製品歩留り率が低
下する問題があった。2. Description of the Related Art In a conventional oxidation / diffusion processing device, the influence of the film thickness due to the fluctuation of atmospheric pressure is not dealt with. Therefore, if the processing is continued without changing the set conditions, there is a problem that the oxide film thickness also changes due to the change in atmospheric pressure, and the product yield rate decreases.
【０００３】[0003]
【発明が解決しようとする課題】従来のものは、大気圧
の変化により酸化膜厚が変化し、製品歩留り率が低下す
る問題があった。本発明は、大気圧の変化で処理条件を
変更することにより、酸化膜厚の変化を無くし、製品歩
留り率向上を目的とする、大気圧による酸化・拡散処理
条件の制御方法である。The conventional one has a problem that the oxide film thickness changes due to the change in atmospheric pressure, and the product yield rate decreases. The present invention is a method for controlling the conditions of oxidation / diffusion treatment under atmospheric pressure for the purpose of eliminating the change in the oxide film thickness by changing the treatment conditions according to the change in atmospheric pressure and improving the product yield rate.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
に、処理時の大気圧を測定し、大気圧と膜厚の関係よ
り、大気圧の変化に対応した、処理条件の変更量を算出
する。これを出力し処理することで、膜厚の変化を無く
し、製品の歩留り率を向上させた、大気圧による酸化・
拡散処理条件の制御方法である。In order to achieve the above object, the atmospheric pressure during processing is measured, and the change amount of the processing condition corresponding to the change in atmospheric pressure is calculated from the relationship between the atmospheric pressure and the film thickness. To do. By outputting and processing this, the change in film thickness is eliminated and the product yield rate is improved.
This is a method of controlling diffusion processing conditions.
【０００５】[0005]
【作用】大気圧による酸化・拡散処理条件の制御方法に
より、処理時の大気圧を測定し、大気圧と膜厚の関係か
ら、処理条件を変更すれば、膜厚の変化が無くなり、製
品の歩留り率が向上する。[Function] The atmospheric pressure during the process is measured by the method of controlling the oxidation / diffusion process condition by the atmospheric pressure, and if the process condition is changed from the relationship between the atmospheric pressure and the film thickness, the change in the film thickness disappears, and the product The yield rate is improved.
【０００６】[0006]
【実施例】半導体製造装置である酸化・拡散処理装置
は、約１０００℃の高温にした石英管の処理室内に、シ
リコンウェハを挿入し、酸素ガスあるいは水蒸気を流
し、ウェハ表面に酸化膜を形成させる装置である。これ
までの酸化・拡散処理では、温度，ガス（Ｎ2，Ｏ2，Ｈ
2）流量，ガス流量比（Ｏ2／Ｎ2，Ｈ2／Ｏ2)、そして時
間の処理条件により、膜質と膜厚をコントロールしてき
た。しかし、大気圧による膜厚への影響が、図４に示す
ように明らかになった。理論的には、拡散律速で酸化速
度が圧力に比例し、酸化膜厚を一定とした場合、圧力と
酸化時間の積は一定である。大気圧は、温度，ガス流
量，時間の３条件と異なり、人為的に設定することはで
きない。従って、大気圧の情報を読み取り、設定条件を
変えることになる。以下に、３つの実施例を示す。[Example] In an oxidation / diffusion processing apparatus which is a semiconductor manufacturing apparatus, a silicon wafer is inserted into a processing chamber of a quartz tube heated to a temperature of about 1000 ° C., oxygen gas or water vapor is caused to flow, and an oxide film is formed on the wafer surface. Device. In the conventional oxidation / diffusion treatment, temperature, gas (N 2 , O 2 , H
2 ) The film quality and film thickness have been controlled by the processing conditions of flow rate, gas flow rate ratio (O 2 / N 2 , H 2 / O 2 ), and time. However, the influence of atmospheric pressure on the film thickness was clarified as shown in FIG. Theoretically, the oxidation rate is proportional to the pressure under the diffusion control, and when the oxide film thickness is constant, the product of the pressure and the oxidation time is constant. The atmospheric pressure cannot be artificially set unlike the three conditions of temperature, gas flow rate and time. Therefore, the atmospheric pressure information is read and the setting conditions are changed. Three examples will be shown below.
【０００７】実施例１ 図１に実施例１の制御内容を示す。大気圧計１より、処
理時の大気圧が随時、電子計算機２に情報としてはいっ
て来る。電子計算機２では、大気圧と酸化膜厚の関係
式、あるいは設定データより、処理終了時点の酸化膜厚
が、規定値になるように条件の変更を行う。その変更さ
れた条件は、制御装置３に送られ、実際に条件の変更を
行っていく。基本は、大気圧の変動量を酸化時間にフィ
ードバックさせ、酸化量の補正を行うが、この他に、ガ
ス流量比により、酸化速度の補正を行っても良い。この
動作は、大気圧が変化する度に繰り返され、結果とし
て、規格値に収まった酸化膜を得ることになる。First Embodiment FIG. 1 shows the control contents of the first embodiment. The atmospheric pressure at the time of processing is input from the atmospheric pressure gauge 1 to the electronic computer 2 as information at any time. In the electronic computer 2, the conditions are changed so that the oxide film thickness at the time of the processing end becomes a specified value from the relational expression between the atmospheric pressure and the oxide film thickness or the setting data. The changed conditions are sent to the control device 3, and the conditions are actually changed. Basically, the fluctuation amount of the atmospheric pressure is fed back to the oxidation time to correct the oxidation amount. However, besides this, the oxidation rate may be corrected by the gas flow rate ratio. This operation is repeated every time the atmospheric pressure changes, and as a result, an oxide film within the standard value is obtained.
【０００８】実施例２ 図２に実施例２の制御内容を示す。実施例１では、温
度，ガス流量，時間を人が設定入力し、その数値を電子
計算機２が、いくらの膜を付けるのか判断し、大気圧計
１の情報と掛け合わせて、出力するものである。実施例
２では付けたい膜厚だけを入力すれば、また工程名だけ
入力すれば、最良の条件で処理をすることになる。そし
て、制御装置３に処理シーケンス全体を制御する機能を
もたせることで、より効率のよい処理を行うことができ
る。Second Embodiment FIG. 2 shows the control contents of the second embodiment. In the first embodiment, a person sets and inputs the temperature, the gas flow rate, and the time, and the electronic computer 2 judges how much the film should be attached, multiplies it with the information of the atmospheric pressure gauge 1, and outputs it. .. In the second embodiment, if only the desired film thickness is input or only the process name is input, the processing is performed under the best conditions. By providing the control device 3 with the function of controlling the entire processing sequence, more efficient processing can be performed.
【０００９】実施例３ 図３に実施例３の制御内容を示す。処理室周囲の大気圧
は、処理室全体を覆う容器内であるため、容器内に封入
する不活性ガスを増減させることで、気圧を一定に保つ
ことが出来る。大気圧計１で、容器内の大気圧を監視
し、変化した場合には、制御装置３に信号を出力し、制
御装置３では、容器内の不活性ガスの量を制御し、大気
圧計１の読みが、基準大気圧になるまで、継続してこの
動作を行う。これにより、温度，ガス流量，時間を変化
させたくないとき有効であり、電子計算機２による、大
気圧の変化量を、温度，ガス流量，時間の変化量に換算
する必要は無くなり、制御方法としては簡単になる。Third Embodiment FIG. 3 shows the control contents of the third embodiment. Since the atmospheric pressure around the processing chamber is in the container that covers the entire processing chamber, the atmospheric pressure can be kept constant by increasing or decreasing the inert gas sealed in the container. The atmospheric pressure meter 1 monitors the atmospheric pressure in the container, and when it changes, outputs a signal to the control device 3. The control device 3 controls the amount of the inert gas in the container, and the atmospheric pressure meter 1 This operation is continuously performed until the reading reaches the reference atmospheric pressure. This is effective when it is not desired to change the temperature, the gas flow rate, and the time, and it is not necessary to convert the change amount of the atmospheric pressure by the electronic computer 2 into the change amount of the temperature, the gas flow rate, and the time. Will be easier.
【００１０】[0010]
【発明の効果】本発明によれば、大気圧の変化で、処理
条件を変更することにより、酸化膜厚を一定にすること
ができ、製品の歩留り率を向上することができる。According to the present invention, the oxide film thickness can be made constant by changing the processing conditions by changing the atmospheric pressure, and the product yield rate can be improved.
【図１】実施例１の構成図である。FIG. 1 is a configuration diagram of a first embodiment.
【図２】実施例２の構成図である。FIG. 2 is a configuration diagram of a second embodiment.
【図３】実施例３の構成図である。FIG. 3 is a configuration diagram of a third embodiment.
【図４】大気圧と酸化膜厚を対比したグラフを示す図で
ある。FIG. 4 is a diagram showing a graph comparing atmospheric pressure and oxide film thickness.
１…大気圧計、２…電子計算機、３…制御装置。 1 ... Atmospheric pressure gauge, 2 ... Electronic computer, 3 ... Control device.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 湯澤 義樹 茨城県勝田市堀口字長久保832番地２ 日 立計測エンジニアリング株式会社内 (72)発明者 青柳 隆 茨城県勝田市市毛882番地 株式会社日立 製作所那珂工場内 (72)発明者 梶山 隆雄 茨城県勝田市市毛882番地 株式会社日立 製作所那珂工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshiki Yuzawa 832 Nagakubo, Horiguchi, Katsuta, Ibaraki Prefecture 2 Nissei Measurement Engineering Co., Ltd. Inside the Naka Factory (72) Inventor Takao Kajiyama 882, Mao, Katsuta City, Ibaraki Prefecture Hitachi Co., Ltd. Inside the Naka Factory
Claims (1)
ら、処理条件の変化量を算出する電子計算機と、変化量
から設定条件を変更する制御装置とで、酸化処理時の大
気圧を測定し、電子計算機から算出された変化量を、制
御装置により設定条件を制御することを特徴とする大気
圧による酸化・拡散処理条件の制御方法。Claim: What is claimed is: 1. A computer for calculating the amount of change in the processing conditions from the relational expression and data of the atmospheric pressure and the oxide film thickness, and a controller for changing the setting conditions based on the amount of the oxidation. A method of controlling oxidation / diffusion processing conditions by atmospheric pressure, characterized in that the atmospheric pressure during processing is measured, and the amount of change calculated from an electronic computer is controlled by a controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19149591A JPH0532500A (en) | 1991-07-31 | 1991-07-31 | Control of oxidizing and diffusing treatment condition under atmospheric pressure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19149591A JPH0532500A (en) | 1991-07-31 | 1991-07-31 | Control of oxidizing and diffusing treatment condition under atmospheric pressure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0532500A true JPH0532500A (en) | 1993-02-09 |
Family
ID=16275598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19149591A Pending JPH0532500A (en) | 1991-07-31 | 1991-07-31 | Control of oxidizing and diffusing treatment condition under atmospheric pressure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0532500A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997046744A1 (en) * | 1996-06-04 | 1997-12-11 | Siemens Aktiengesellschaft | Process and device to compensate for fluctuations in atmospheric pressure during thermal oxidation processes |
| US5798141A (en) * | 1994-12-19 | 1998-08-25 | Kokusai Electric Co., Ltd. | Method for semiconductor filming |
| US7280884B2 (en) | 2003-02-24 | 2007-10-09 | Seiko Epson Corporation | Optimization method of deposition time and an optimization system of deposition time |
| CN103811335A (en) * | 2014-03-07 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Silicon oxide film preparation method, oxide film thickness control device and oxidization furnace |
| CN109545715A (en) * | 2018-11-21 | 2019-03-29 | 武汉新芯集成电路制造有限公司 | A kind of wafer processing and the adjusting method of boiler tube wafer process time |
| CN113410126A (en) * | 2021-06-18 | 2021-09-17 | 上海华虹宏力半导体制造有限公司 | Method and system for automatically regulating thickness of silicon oxide film in thermal oxidation process |
-
1991
- 1991-07-31 JP JP19149591A patent/JPH0532500A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5798141A (en) * | 1994-12-19 | 1998-08-25 | Kokusai Electric Co., Ltd. | Method for semiconductor filming |
| WO1997046744A1 (en) * | 1996-06-04 | 1997-12-11 | Siemens Aktiengesellschaft | Process and device to compensate for fluctuations in atmospheric pressure during thermal oxidation processes |
| US7280884B2 (en) | 2003-02-24 | 2007-10-09 | Seiko Epson Corporation | Optimization method of deposition time and an optimization system of deposition time |
| US7831329B2 (en) | 2003-02-24 | 2010-11-09 | Seiko Epson Corporation | Optimization method of deposition time and an optimization system of deposition time |
| CN103811335A (en) * | 2014-03-07 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Silicon oxide film preparation method, oxide film thickness control device and oxidization furnace |
| CN109545715A (en) * | 2018-11-21 | 2019-03-29 | 武汉新芯集成电路制造有限公司 | A kind of wafer processing and the adjusting method of boiler tube wafer process time |
| CN113410126A (en) * | 2021-06-18 | 2021-09-17 | 上海华虹宏力半导体制造有限公司 | Method and system for automatically regulating thickness of silicon oxide film in thermal oxidation process |
| CN113410126B (en) * | 2021-06-18 | 2024-03-08 | 上海华虹宏力半导体制造有限公司 | Method and system for automatically regulating thickness of silicon oxide film in thermal oxidation process |
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