CN109545715A - A kind of wafer processing and the adjusting method of boiler tube wafer process time - Google Patents
A kind of wafer processing and the adjusting method of boiler tube wafer process time Download PDFInfo
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- CN109545715A CN109545715A CN201811394171.1A CN201811394171A CN109545715A CN 109545715 A CN109545715 A CN 109545715A CN 201811394171 A CN201811394171 A CN 201811394171A CN 109545715 A CN109545715 A CN 109545715A
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- boiler tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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Abstract
The present invention relates to technical field of semiconductors more particularly to a kind of wafer processings, comprising: boiler tube is stored with the time parameter of the wafer handling time for controlling boiler tube；Baroceptor, for acquiring the atmospheric pressure information outside boiler tube；Processor is separately connected boiler tube and baroceptor, the time parameter of the atmospheric pressure information to be acquired according to baroceptor and the amendment data prestored adjusting boiler tube；And a kind of adjusting method of boiler tube wafer process time；Include: step S1, acquires the atmospheric pressure information outside boiler tube；Step S2 adjusts the time parameter of boiler tube according to the atmospheric pressure information of preset amendment data and baroceptor acquisition；Manual adjustment boiler tube is not needed, the automatic adjustment of boiler tube process time is realized, ensure that the accuracy and real-time of adjusting.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of wafer processing and boiler tube wafer process times
Adjusting method.
Background technique
In semiconductor processing technology, there is very high requirement to the thickness of film, and to some important films
Layer is even more important, such as oxide layer-nitride layer-oxide layer film, high pressure zone, low pressure layer etc., if thicknesses of layers deviation is larger,
Scrap of the product may be directly resulted in.
Having many important film layers at present is grown in boiler tube, and boiler tube, which grows film layer, has film layer densification, quality
High, the features such as flatness is good, and the cost of boiler tube is relatively low.General board mixes up relevant configuration after time-based maintenance, and one
The growth of corresponding film layer can be adapted to and require by only needing to adjust process time in year.
However, existing boiler tube still has certain problem, the thickness and ambient pressure for essentially consisting in film layer have very
Strong correlation.When ambient pressure increases, the thickness of film layer just be will increase, and when ambient pressure declines, the thickness of film layer will subtract
It is few.When cataclysm occurs for weather, air pressure can also change fiercely, simple not can guarantee accurate type by artificially allotment being gone to set, can not
Cope with the situation of the various uncertainties in reaction process.
Summary of the invention
In view of the above-mentioned problems, the invention proposes a kind of wafer processings, wherein include:
Boiler tube is stored with the time parameter of the wafer handling time for controlling the boiler tube；
Baroceptor, for acquiring the atmospheric pressure information outside the boiler tube；
Processor is separately connected the boiler tube and the baroceptor, with the institute acquired according to the baroceptor
It states atmospheric pressure information and the amendment data that prestore adjusts the time parameter of the boiler tube.
Above-mentioned wafer processing, wherein described to correct the time after data are adjusted according to following formula
Parameter:
T1=(P1-P) * p0/(-t0)+T
In formula, T1 is the time parameter after adjusting；T is the time parameter of standard；P1 is described after adjusting
Atmospheric pressure parameter；P is the atmospheric pressure parameter of standard；p0Influence system for the atmospheric pressure parameter to wafer thickness
Number；t0Influence coefficient for the time parameter to wafer thickness.
Above-mentioned wafer processing, wherein the boiler tube has operating mode, and the operating mode includes preparing mould
Formula, tupe and anneal mode；
The wafer handling time is runing time of the boiler tube under the tupe.
Above-mentioned wafer processing, wherein the temperature under the tupe in the boiler tube is 900~1100 DEG C
(degree Celsius).
Above-mentioned wafer processing, wherein the duration of the ready mode is 2~4h (hour).
A kind of adjusting method of boiler tube wafer process time, wherein be applied to a boiler tube, the boiler tube is stored with for controlling
Make the time parameter of the wafer handling time of the boiler tube；The adjusting method includes:
Step S1 acquires the atmospheric pressure information outside the boiler tube；
Step S2 is adjusted according to the atmospheric pressure information of preset amendment data and baroceptor acquisition
The time parameter of the boiler tube.
Above-mentioned adjusting method, wherein described to correct the time parameter after data are adjusted according to following formula:
T1=(P1-P) * p0/(-t0)+T
In formula, T1 is the time parameter after adjusting；T is the time parameter of standard；P1 is described after adjusting
Atmospheric pressure parameter；P is the atmospheric pressure parameter of standard；p0Influence system for the atmospheric pressure parameter to wafer thickness
Number；t0Influence coefficient for the time parameter to wafer thickness.
Above-mentioned adjusting method, wherein the boiler tube has operating mode, and the operating mode includes ready mode, place
Reason mode and anneal mode；
The wafer handling time is runing time of the boiler tube under the tupe.
Above-mentioned adjusting method, wherein the temperature under the tupe in the boiler tube is 900~1100 DEG C.
Above-mentioned adjusting method, wherein the duration of the ready mode is 2~4h.
The utility model has the advantages that a kind of wafer processing proposed by the present invention and the adjusting method of boiler tube wafer process time, no
Manual adjustment boiler tube is needed, the automatic adjustment of boiler tube process time is realized, ensure that the accuracy and real-time of adjusting.
Detailed description of the invention
Fig. 1 is the structure principle chart of the boiler tube of wafer processing in one embodiment of the invention；
Fig. 2 is the step flow chart of the adjusting method of boiler tube wafer process time in one embodiment of the invention.
Specific embodiment
Invention is further explained with reference to the accompanying drawings and examples.
Embodiment one
In a preferred embodiment, as shown in Figure 1, proposing a kind of wafer processing, wherein include:
Boiler tube is stored with the time parameter of the wafer handling time for controlling boiler tube；
Baroceptor, for acquiring the atmospheric pressure information outside boiler tube；
Processor is separately connected boiler tube and baroceptor, the atmospheric pressure information to be acquired according to baroceptor and
The amendment data prestored adjust the time parameter of boiler tube.
In above-mentioned technical proposal, the configuration of boiler tube can be a certain fixing situation；The structural principle of boiler tube can be such as Fig. 1 institute
Show, which may include reaction tube 10, cassette 20, pedestal 30, and wherein cassette 20 is set in reaction tube 10 for carrying crystalline substance
Circle, pedestal 30 can be set in 20 bottom of cassette for carrying wafer；Gas is transported to reaction tube 10 by corresponding pipeline
In, such as nitrogen and/or hydrogen and/or oxygen etc.；Baroceptor is generally positioned at outside boiler tube；Processor can be collection
At on boiler tube, being also possible to independent processing equipment；Amendment data can be in actual production process to wafer growth
Thicknesses of layers carries out long-term record formation, the data of reflecting time parameter and the correlation of atmospheric pressure information；Air pressure sensing
Device can have digital wash.
In a preferred embodiment, the time parameter after amendment data are adjusted according to following formula:
T1=(P1-P) * p0/(-t0)+T
In formula, T1 is the time parameter after adjusting；T is the time parameter of standard；P1 is the atmospheric pressure parameter after adjusting；
P is the atmospheric pressure parameter of standard；p0Influence coefficient for atmospheric pressure parameter to wafer thickness；t0It is time parameter to wafer
The influence coefficient of thickness.
Amendment Data Summary in above-mentioned technical proposal forms formula, and in other cases, amendment data can also be
Continuous or discrete other forms, such as data and curves or data form etc..
In the above parameter, in same wafer preparation process, the time parameter T of standard and the atmospheric pressure parameter of standard
P is preset amendment data at normal atmospheric pressure, is constant parameter, and in different wafer preparation processes, standard
Time parameter T and the atmospheric pressure parameter P preset amendment data at normal atmospheric pressure of standard be different.
Similarly, influence coefficient p of the atmospheric pressure parameter to wafer thickness0Influence coefficient with time parameter to wafer thickness
t0It is also preset amendment data in actual production process, and is directed to the preparation process of the wafer of different-thickness, atmospheric pressure
Influence coefficient p of the parameter to wafer thickness0Influence coefficient t with time parameter to wafer thickness0It is variation, for example, for same
In one wafer preparation process, for preparing the bigger wafer of thickness, influence coefficient p of the atmospheric pressure parameter to wafer thickness0With
Influence coefficient t of the time parameter to wafer thickness0It is bigger.
In a preferred embodiment, boiler tube has operating mode, which may include ready mode, processing
Mode and anneal mode；
Wafer handling time is runing time of the boiler tube under tupe.
In above-mentioned technical proposal, boiler tube generally forms an elevated temp under ready mode, when temperature rise to enough into
After the degree of row reaction, then enters tupe and reacted and handled, then carry out anneal mode after the completion and cool down.
In above-described embodiment, it is preferable that temperature under tupe in boiler tube is 900~1100 DEG C, for example, can be with
It is 920 DEG C or 950 DEG C or 980 DEG C or 1000 DEG C or 1050 DEG C or 1080 DEG C etc..
In above-described embodiment, it is preferable that the duration of ready mode is 2~4h, for example, it can be 2.2h, or
2.5h or 2.8h or 3.0h or 3.5h or 3.8h or 3.9h etc..
Embodiment two
As shown in Fig. 2, in a preferred embodiment, it is also proposed that a kind of adjusting side of boiler tube wafer process time
Method, which is characterized in that be applied to a boiler tube, boiler tube is stored with the time parameter of the wafer handling time for controlling boiler tube；It adjusts
Section method includes:
Step S1 acquires the atmospheric pressure information outside boiler tube；
Step S2, according to it is preset amendment data and baroceptor acquisition atmospheric pressure information, adjust boiler tube when
Between parameter.
In above-mentioned technical proposal, amendment data, which can be in actual production process, grows the thicknesses of layers of wafer growth
Phase, which records, to be formed, the data of reflecting time parameter and the correlation of atmospheric pressure information.
In a preferred embodiment, the time parameter after amendment data are adjusted according to following formula:
T1=(P1-P) * p0/(-t0)+T
In formula, T1 is the time parameter after adjusting；T is the time parameter of standard；P1 is the atmospheric pressure parameter after adjusting；
P is the atmospheric pressure parameter of standard；p0Influence coefficient for atmospheric pressure parameter to wafer thickness；t0It is time parameter to wafer
The influence coefficient of thickness.
Amendment Data Summary in above-mentioned technical proposal forms formula, and in other cases, amendment data can also be
Continuous or discrete other forms, such as data and curves or data form etc..
In the above parameter, in same wafer preparation process, the time parameter T of standard and the atmospheric pressure parameter of standard
P is preset amendment data at normal atmospheric pressure, is constant parameter, and in different wafer preparation processes, standard
Time parameter T and the atmospheric pressure parameter P preset amendment data at normal atmospheric pressure of standard be different.
Similarly, influence coefficient p of the atmospheric pressure parameter to wafer thickness0Influence coefficient with time parameter to wafer thickness
t0It is also preset amendment data in actual production process, and is directed to the preparation process of the wafer of different-thickness, atmospheric pressure
Influence coefficient p of the parameter to wafer thickness0Influence coefficient t with time parameter to wafer thickness0It is variation, for example, for same
In one wafer preparation process, for preparing the bigger wafer of thickness, influence coefficient p of the atmospheric pressure parameter to wafer thickness0With
Influence coefficient t of the time parameter to wafer thickness0It is bigger.
In a preferred embodiment, boiler tube has operating mode, which includes ready mode, tupe
And anneal mode；
Wafer handling time is runing time of the boiler tube under tupe.
In above-mentioned technical proposal, boiler tube generally forms an elevated temp under ready mode, when temperature rise to enough into
After the degree of row reaction, then enters tupe and reacted and handled, then carry out anneal mode after the completion and cool down.
In above-described embodiment, it is preferable that temperature under tupe in boiler tube is 900~1100 DEG C, for example, can be with
It is 920 DEG C or 950 DEG C or 980 DEG C or 1000 DEG C or 1050 DEG C or 1080 DEG C etc..
In above-described embodiment, it is preferable that the duration of ready mode is 2~4h, for example, it can be 2.2h, or
2.5h or 2.8h or 3.0h or 3.5h or 3.8h or 3.9h etc..
In conclusion a kind of wafer processing proposed by the present invention and the adjusting method of boiler tube wafer process time, no
Manual adjustment boiler tube is needed, the automatic adjustment of boiler tube process time is realized, ensure that the accuracy and real-time of adjusting.
By description and accompanying drawings, the exemplary embodiments of the specific structure of specific embodiment are given, based on present invention essence
Mind can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly be will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering true intention and range of the invention as.It is weighing
The range and content of any and all equivalences, are all considered as still belonging to the intent and scope of the invention within the scope of sharp claim.
Claims (10)
1. a kind of wafer processing characterized by comprising
Boiler tube is stored with the time parameter of the wafer handling time for controlling the boiler tube；
Baroceptor, for acquiring the atmospheric pressure information outside the boiler tube；
Processor is separately connected the boiler tube and the baroceptor, described big to be acquired according to the baroceptor
Air pressure force information and the amendment data prestored adjust the time parameter of the boiler tube.
2. wafer processing according to claim 1, which is characterized in that the amendment data are obtained according to following formula
The time parameter after adjusting:
T1=(P1-P) * p0/(-t0)+T
In formula, T1 is the time parameter after adjusting；T is the time parameter of standard；P1 is the atmosphere after adjusting
Pressure parameter；P is the atmospheric pressure parameter of standard；p0Influence coefficient for the atmospheric pressure parameter to wafer thickness；t0
Influence coefficient for the time parameter to wafer thickness.
3. wafer processing according to claim 1, which is characterized in that the boiler tube has operating mode, the work
Operation mode includes ready mode, tupe and anneal mode；
The wafer handling time is runing time of the boiler tube under the tupe.
4. wafer processing according to claim 3, which is characterized in that the temperature under the tupe in the boiler tube
Degree is 900~1100 DEG C.
5. wafer processing according to claim 3, which is characterized in that the duration of the ready mode be 2~
4h。
6. a kind of adjusting method of boiler tube wafer process time, which is characterized in that be applied to a boiler tube, the boiler tube storage is useful
In the time parameter for the wafer handling time for controlling the boiler tube；The adjusting method includes:
Step S1 acquires the atmospheric pressure information outside the boiler tube；
Step S2, according to the atmospheric pressure information of preset amendment data and baroceptor acquisition, described in adjusting
The time parameter of boiler tube.
7. adjusting method according to claim 6, which is characterized in that the amendment data are adjusted according to following formula
The time parameter afterwards:
T1=(P1-P) * p0/(-t0)+T
In formula, T1 is the time parameter after adjusting；T is the time parameter of standard；P1 is the atmosphere after adjusting
Pressure parameter；P is the atmospheric pressure parameter of standard；p0Influence coefficient for the atmospheric pressure parameter to wafer thickness；t0
Influence coefficient for the time parameter to wafer thickness.
8. adjusting method according to claim 6, which is characterized in that the boiler tube has operating mode, the Working mould
Formula includes ready mode, tupe and anneal mode；
The wafer handling time is runing time of the boiler tube under the tupe.
9. adjusting method according to claim 8, which is characterized in that the temperature under the tupe in the boiler tube is
900~1100 DEG C.
10. adjusting method according to claim 8, which is characterized in that the duration of the ready mode is 2~4h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811394171.1A CN109545715A (en) | 2018-11-21 | 2018-11-21 | A kind of wafer processing and the adjusting method of boiler tube wafer process time |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811394171.1A CN109545715A (en) | 2018-11-21 | 2018-11-21 | A kind of wafer processing and the adjusting method of boiler tube wafer process time |
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| CN109545715A true CN109545715A (en) | 2019-03-29 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0532500A (en) * | 1991-07-31 | 1993-02-09 | Hitachi Ltd | Control of oxidizing and diffusing treatment condition under atmospheric pressure |
| WO1997046744A1 (en) * | 1996-06-04 | 1997-12-11 | Siemens Aktiengesellschaft | Process and device to compensate for fluctuations in atmospheric pressure during thermal oxidation processes |
| CN1643667A (en) * | 2002-04-19 | 2005-07-20 | 东京毅力科创株式会社 | Film formation method |
| US20090192641A1 (en) * | 2003-02-24 | 2009-07-30 | Seiko Epson Corporation | Optimization method of deposition time and an optimization system of deposition time |
| CN103811335A (en) * | 2014-03-07 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Silicon oxide film preparation method, oxide film thickness control device and oxidization furnace |
| CN105200399A (en) * | 2015-08-31 | 2015-12-30 | 上海华力微电子有限公司 | Method for controlling thickness of thin film growing in normal-pressure furnace pipe |
-
2018
- 2018-11-21 CN CN201811394171.1A patent/CN109545715A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0532500A (en) * | 1991-07-31 | 1993-02-09 | Hitachi Ltd | Control of oxidizing and diffusing treatment condition under atmospheric pressure |
| WO1997046744A1 (en) * | 1996-06-04 | 1997-12-11 | Siemens Aktiengesellschaft | Process and device to compensate for fluctuations in atmospheric pressure during thermal oxidation processes |
| CN1643667A (en) * | 2002-04-19 | 2005-07-20 | 东京毅力科创株式会社 | Film formation method |
| US20090192641A1 (en) * | 2003-02-24 | 2009-07-30 | Seiko Epson Corporation | Optimization method of deposition time and an optimization system of deposition time |
| CN103811335A (en) * | 2014-03-07 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Silicon oxide film preparation method, oxide film thickness control device and oxidization furnace |
| CN105200399A (en) * | 2015-08-31 | 2015-12-30 | 上海华力微电子有限公司 | Method for controlling thickness of thin film growing in normal-pressure furnace pipe |
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Application publication date: 20190329 |
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