JPS60107840A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS60107840A
JPS60107840A JP21394183A JP21394183A JPS60107840A JP S60107840 A JPS60107840 A JP S60107840A JP 21394183 A JP21394183 A JP 21394183A JP 21394183 A JP21394183 A JP 21394183A JP S60107840 A JPS60107840 A JP S60107840A
Authority
JP
Japan
Prior art keywords
water content
oxygen
quartz
quartz pipe
small amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21394183A
Inventor
Hideo Honma
Naohiro Monma
Masami Naito
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21394183A priority Critical patent/JPS60107840A/en
Publication of JPS60107840A publication Critical patent/JPS60107840A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass

Abstract

PURPOSE:To obtain an oxide film having uniform film thickness with excellent reproducibility by heating a semiconductor substrate in an oxidizing atmosphere gas containing a very small amount of water content in quantity more than maximum water content discharged from an oxidizing atmosphere system and less than 1,000ppm when the oxide film is formed on the surface of the substrate. CONSTITUTION:A quartz jig 3 on which a large number of Si substrates 1 are erected at intervals is received in a quartz pipe 2 surrounded by a heating furnace 12, oxygen to which a very small amount of water content is added is flowed into the quartz pipe 2 and the substrates 1 are heated at approximately 1,000 deg.C, and SiO2 films are formed on the surfaces of the substrates. In the constitution, a purifier 4 for oxygen is disposed outside the quartz pipe 2, oxygen from the purifier is bubbled in a quartz vessel 6 receiving pure water 7 fitted in a thermostatic chamber 5, and water content is regulated by a water content densitometer while a very small amount of water content is made to be contained in oxygen and oxygen is flowed into the quartz pipe 2. Water content is regulated in quantity more than maximum water content discharged from the quartz pipe 2 and less than 1,000ppm.
JP21394183A 1983-11-16 1983-11-16 Manufacture of semiconductor element Pending JPS60107840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21394183A JPS60107840A (en) 1983-11-16 1983-11-16 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21394183A JPS60107840A (en) 1983-11-16 1983-11-16 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS60107840A true JPS60107840A (en) 1985-06-13

Family

ID=16647578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21394183A Pending JPS60107840A (en) 1983-11-16 1983-11-16 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS60107840A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880041A (en) * 1994-05-27 1999-03-09 Motorola Inc. Method for forming a dielectric layer using high pressure
US6239041B1 (en) 1997-03-05 2001-05-29 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit device
US7049187B2 (en) 2001-03-12 2006-05-23 Renesas Technology Corp. Manufacturing method of polymetal gate electrode
US7053459B2 (en) 2001-03-12 2006-05-30 Renesas Technology Corp. Semiconductor integrated circuit device and process for producing the same

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880041A (en) * 1994-05-27 1999-03-09 Motorola Inc. Method for forming a dielectric layer using high pressure
US7053007B2 (en) 1997-03-05 2006-05-30 Renesas Technology Corp. Method for fabricating semiconductor integrated circuit device
US6417114B2 (en) 1997-03-05 2002-07-09 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit device
US6518201B1 (en) 1997-03-05 2003-02-11 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit device
US6518202B2 (en) 1997-03-05 2003-02-11 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit device
US6528431B2 (en) 1997-03-05 2003-03-04 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit drive using an oxygen and hydrogen catalyst
US6569780B2 (en) 1997-03-05 2003-05-27 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit device
US6596650B2 (en) 1997-03-05 2003-07-22 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit device
US6855642B2 (en) 1997-03-05 2005-02-15 Renesas Technology Corp. Method for fabricating semiconductor integrated circuit device
US6962880B2 (en) 1997-03-05 2005-11-08 Renesas Technology Corp. Method for fabricating semiconductor integrated circuit device
US6239041B1 (en) 1997-03-05 2001-05-29 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit device
US7008880B2 (en) 1997-03-05 2006-03-07 Renesas Technology Corp. Method for fabricating semiconductor integrated circuit device
US7250376B2 (en) 1997-03-05 2007-07-31 Renesas Technology Corp. Method for fabricating semiconductor integrated circuit device
US6962881B2 (en) 1997-03-05 2005-11-08 Renesas Technology Corp. Method for fabricating semiconductor integrated circuit device
US7799690B2 (en) 1997-03-05 2010-09-21 Renesas Electronics Corporation Method for fabricating semiconductor integrated circuit device
US7144766B2 (en) 2001-03-12 2006-12-05 Renesas Technology Corp. Method of manufacturing semiconductor integrated circuit device having polymetal gate electrode
US7049187B2 (en) 2001-03-12 2006-05-23 Renesas Technology Corp. Manufacturing method of polymetal gate electrode
US7300833B2 (en) 2001-03-12 2007-11-27 Renesas Technology Corp. Process for producing semiconductor integrated circuit device
US7375013B2 (en) 2001-03-12 2008-05-20 Renesas Technology Corp. Semiconductor integrated circuit device and process for manufacturing the same
US7632744B2 (en) 2001-03-12 2009-12-15 Renesas Technology Corp. Semiconductor integrated circuit device and process for manufacturing the same
US7053459B2 (en) 2001-03-12 2006-05-30 Renesas Technology Corp. Semiconductor integrated circuit device and process for producing the same

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