JPH05320897A - Magnetron sputtering cathode - Google Patents

Magnetron sputtering cathode

Info

Publication number
JPH05320897A
JPH05320897A JP15451192A JP15451192A JPH05320897A JP H05320897 A JPH05320897 A JP H05320897A JP 15451192 A JP15451192 A JP 15451192A JP 15451192 A JP15451192 A JP 15451192A JP H05320897 A JPH05320897 A JP H05320897A
Authority
JP
Japan
Prior art keywords
magnet
target
annular
annular intermediate
central
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15451192A
Other languages
Japanese (ja)
Inventor
Hidenori Suwa
秀則 諏訪
Shunichi Imamura
俊一 今村
Hideaki Haga
日出明 羽賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP15451192A priority Critical patent/JPH05320897A/en
Publication of JPH05320897A publication Critical patent/JPH05320897A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To provide a magnetron sputtering cathode capable of improving the use efficiency of targets not under limited conditions even but in conditions covering a wide range. CONSTITUTION:In a magnetron sputtering cathode where a central magnet 5 is annularly surrounded with plural annular intermediate magnets 6a, 6b and an annular peripheral magnet 7 in this order to form a magnet device which is arranged in the back of a target 1 and by which the curved magnetic field is formed in a space in the vicinity of the surface of the target 1, the central magnet 5 and the annular peripheral magnet 7 are fixed, and on the other hand, the position variable means is provided only for the annular intermediate magnets 6a, 6b. By this means, the position of the annular intermediate magnets is made variable to make the spacing between the annular intermediate magnets 6a, 6b and the target 1 freely variable.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、ターゲットの表面近
傍の空間に形成される磁場分布を調整することの出来る
マグネトロンスパッタカソードに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputter cathode capable of adjusting the magnetic field distribution formed in the space near the surface of a target.

【0002】[0002]

【従来の技術】従来のマグネトロンスパッタカソードは
図4および図5に示されており、これらの図において、
ターゲット1はバッキングプレート2の表面に取り付け
られ、また、バッキングプレート2の背後には磁石装置
3が配設されている。磁石装置3は、固定ヨーク4の中
央部に立設された中央磁石5と、中央磁石5の廻りを囲
むように固定ヨーク4に立設された2つの環状中間磁石
6a、6bと、外側の環状中間磁石6bの廻りを囲むよ
うに固定ヨーク4に立設された環状周縁磁石7とを備え
た構成になっている。そして、中央磁石5、2つの環状
中間磁石6a、6bおよび環状周縁磁石7は横断面が方
形をした永久磁石で出来ている。なお、8はベース、9
はベース8に固定ヨーク4を支持する支持部材である。
2. Description of the Prior Art A conventional magnetron sputter cathode is shown in FIGS. 4 and 5, in which:
The target 1 is attached to the surface of the backing plate 2, and the magnet device 3 is arranged behind the backing plate 2. The magnet device 3 includes a central magnet 5 erected in the center of the fixed yoke 4, two annular intermediate magnets 6a and 6b erected on the fixed yoke 4 so as to surround the periphery of the central magnet 5, and an outer magnet. An annular peripheral magnet 7 is provided upright on the fixed yoke 4 so as to surround the annular intermediate magnet 6b. The central magnet 5, the two annular intermediate magnets 6a and 6b, and the annular peripheral magnet 7 are permanent magnets having a rectangular cross section. 8 is the base and 9
Is a support member that supports the fixed yoke 4 on the base 8.

【0003】このようなマグネトロンスパッタカソード
においては、中央磁石5、2つの環状中間磁石6a、6
bおよび環状周縁磁石7によって、ターゲット1の表面
近傍の空間に湾曲した磁場を形成し、そこに高密度のプ
ラズマを発生させ、プラズマ中のイオンでターゲット1
をスパッタするようにしている。
In such a magnetron sputter cathode, the central magnet 5 and the two annular intermediate magnets 6a, 6 are provided.
A curved magnetic field is formed in the space near the surface of the target 1 by b and the annular peripheral magnet 7, and high-density plasma is generated in the curved magnetic field.
Is sputtered.

【0004】[0004]

【発明が解決しようとする課題】従来のマグネトロンス
パッタカソードは、上記のように中央磁石5、2つの環
状中間磁石6a、6bおよび環状周縁磁石7が固定ヨー
ク4に立設され、可動しない。そのため、磁石装置3を
製品化する前に、中央磁石5、2つの環状中間磁石6
a、6bおよび環状周縁磁石7の配列、形状、種類を決
定し、磁石装置3の性能を実験した後でないと、ターゲ
ット1を均一にエロージョンして、ターゲットの使用効
率を良くさせることが出来ず、更に、一旦、最適の磁石
装置3を決定したとしても、ターゲットの使用効率がタ
ーゲットの寸法、ターゲットの材質、操作圧力、スパッ
タパワー等の条件の変化によっても変動するので、限定
された条件の下でしか磁石装置3を使用でない問題があ
った。
In the conventional magnetron sputter cathode, the central magnet 5, the two annular intermediate magnets 6a and 6b and the annular peripheral magnet 7 are erected on the fixed yoke 4 as described above, and are not movable. Therefore, before commercializing the magnet device 3, the central magnet 5 and the two annular intermediate magnets 6 are formed.
Unless the arrangements, shapes, and types of the a and 6b and the annular peripheral magnet 7 are determined and the performance of the magnet device 3 is tested, the target 1 can be uniformly eroded and the efficiency of use of the target cannot be improved. Further, even if the optimum magnet device 3 is once determined, the use efficiency of the target varies depending on changes in conditions such as the size of the target, the material of the target, the operating pressure, and the sputtering power. There was a problem that the magnet device 3 was not used only below.

【0005】この発明の目的は、従来の上記問題を解決
して、限定された条件ではなく、広範囲な条件の下で
も、ターゲットの使用効率を良好に出来るマグネトロン
スパッタカソードを提供することにある。
An object of the present invention is to solve the above-mentioned problems of the prior art and to provide a magnetron sputter cathode capable of improving the use efficiency of a target not only under limited conditions but also under a wide range of conditions.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に、この発明は、中央磁石の廻りを複数の環状中間磁
石、環状周縁磁石の順序でリング状に囲んでいる磁石装
置をターゲット背部に配設し、ターゲットの表面近傍の
空間に湾曲した磁場を磁石装置によって形成するマグネ
トロンスパッタカソードにおいて、上記中央磁石と環状
周縁磁石を固定する一方で、上記環状中間磁石のみに位
置可変手段を設け、この位置可変手段で上記環状中間磁
石の位置を上下方向に可変させ、上記環状中間磁石とタ
ーゲットの裏面との間隔を可変自在にしたことを特徴と
するものである。
In order to achieve the above object, the present invention provides a magnet device in which a circumference of a central magnet is surrounded by a plurality of ring-shaped intermediate magnets and ring-shaped peripheral magnets in a ring shape in a target back portion. In the magnetron sputter cathode which is arranged and forms a curved magnetic field in the space near the surface of the target by the magnet device, while fixing the central magnet and the annular peripheral magnet, the position varying means is provided only in the annular intermediate magnet, The position changing means changes the position of the annular intermediate magnet in the vertical direction, so that the distance between the annular intermediate magnet and the back surface of the target can be changed.

【0007】[0007]

【作用】この発明は、位置可変手段で環状中間磁石をの
位置を可変させ、環状中間磁石とターゲットの裏面との
間隔を可変自在にしているので、ターゲットの表面近傍
の空間に形成される磁場分布を調整することが出来る。
そのため、ターゲットの寸法、ターゲットの材質、操作
圧力、スパッタパワー等の条件が変化しても、安定した
ターゲットの使用効率を維持することが可能になる。
According to the present invention, the position of the annular intermediate magnet is changed by the position changing means so that the distance between the annular intermediate magnet and the back surface of the target can be changed freely. Therefore, the magnetic field formed in the space near the surface of the target is changed. The distribution can be adjusted.
Therefore, even if conditions such as the size of the target, the material of the target, the operating pressure, and the sputtering power are changed, it is possible to maintain the stable target use efficiency.

【0008】[0008]

【実施例】以下、この発明の実施例について図面を参照
しながら説明する。この発明の実施例のマグネトロンス
パッタカソードは図1および図2に示されており、これ
らの図において、ターゲット1はバッキングプレート2
の表面に取り付けられ、また、バッキングプレート2の
背後には磁石装置3が配設されている。磁石装置3は、
固定された中央ヨーク11と、この中央ヨーク11の廻
りにこれと間隔をおいて環状に固定配置された環状周縁
ヨーク12と、中央ヨーク11と環状周縁ヨーク12と
の間を通過でき、これらのヨーク11、12より下方に
位置する環状中間ヨーク13と、中央ヨーク11に立設
された中央磁石5と、中央磁石5の廻りを囲むように環
状中間ヨーク13に直接又は鉄製スペーサ14を介して
立設され、取り付け位置に格差のもつ2つの環状中間磁
石6a、6bと、外側の環状中間磁石6bの廻りを囲む
ように環状周縁ヨーク12に立設された環状周縁磁石7
とを備え、環状中間ヨーク13の位置を変えたり、ある
いは、鉄製スペーサ14の高さを変えたりすることによ
って、2つの環状中間磁石6a、6bと、ターゲット1
の裏面との間隔を可変自在にしている。そして、中央磁
石5、2つの環状中間磁石6a、6bおよび環状周縁磁
石7は横断面が方形をした永久磁石で出来ている。な
お、8はベース、15はベース8に中央ヨーク11を支
持する中央支持部材、16はベース8に環状中間ヨーク
13を支持する中間支持部材、17はベース8に環状周
縁ヨーク12支持する周縁支持部材である。
Embodiments of the present invention will be described below with reference to the drawings. A magnetron sputter cathode of an embodiment of the present invention is shown in FIGS. 1 and 2, in which target 1 is backing plate 2
The magnet device 3 is mounted on the surface of the backing plate 2 and behind the backing plate 2. The magnet device 3 is
The fixed central yoke 11, the annular peripheral yoke 12 fixedly arranged around the central yoke 11 at a distance from the fixed central yoke 11, and the central yoke 11 and the annular peripheral yoke 12 can pass between these. An annular intermediate yoke 13 located below the yokes 11 and 12, a central magnet 5 standing on the central yoke 11, and an annular intermediate yoke 13 surrounding the central magnet 5 either directly or via an iron spacer 14 Two annular intermediate magnets 6a, 6b, which are erected and have different mounting positions, and an annular peripheral magnet 7 which is erected on an annular peripheral yoke 12 so as to surround the circumference of the outer annular intermediate magnet 6b.
By changing the position of the annular intermediate yoke 13 or changing the height of the iron spacer 14, the two annular intermediate magnets 6a and 6b and the target 1 are provided.
The distance from the back of the is variable. The central magnet 5, the two annular intermediate magnets 6a and 6b, and the annular peripheral magnet 7 are permanent magnets having a rectangular cross section. Reference numeral 8 is a base, 15 is a central support member that supports the central yoke 11 on the base 8, 16 is an intermediate support member that supports the annular intermediate yoke 13 on the base 8, and 17 is a peripheral edge support that supports the annular peripheral yoke 12 on the base 8. It is a member.

【0009】このような実施例においては、環状中間ヨ
ーク13の位置を変えたり、あるいは、鉄製スペーサ1
4の高さを変えたりすることによって、2つの環状中間
磁石6a、6bと、ターゲット1の裏面との間隔を可変
自在にしているので、ターゲット1の表面近傍の空間に
形成される磁場分布を図3の実線から破線に示されるよ
うに調整することが出来る。そのため、ターゲット1の
寸法、ターゲット1の材質、操作圧力、スパッタパワー
等の条件が変化しても、安定したターゲットの使用効率
を維持することが可能になる。
In such an embodiment, the position of the annular intermediate yoke 13 is changed, or the iron spacer 1 is used.
The distance between the two annular intermediate magnets 6a and 6b and the back surface of the target 1 is made variable by changing the height of the magnetic field 4, so that the magnetic field distribution formed in the space near the surface of the target 1 can be changed. It can be adjusted as shown by the solid line to the broken line in FIG. Therefore, even if the conditions such as the size of the target 1, the material of the target 1, the operating pressure, and the sputtering power are changed, it is possible to maintain stable use efficiency of the target.

【0010】ところで、上記実施例の環状中間ヨーク1
3を中間支持部材で支持する代わりに、モータ駆動の上
下動移動機構で支持し、環状中間ヨーク13を動かすこ
とによって、2つの環状中間磁石6a、6bと、ターゲ
ット1の裏面との間隔を可変自在にしてもよい。
By the way, the annular intermediate yoke 1 of the above embodiment.
3 is supported by a motor-driven vertical movement mechanism instead of being supported by an intermediate support member, and the annular intermediate yoke 13 is moved to change the distance between the two annular intermediate magnets 6a and 6b and the back surface of the target 1. You may set it freely.

【0011】[0011]

【発明の効果】この発明は、位置可変手段で環状中間磁
石をの位置を可変させ、環状中間磁石とターゲットの裏
面との間隔を可変自在にしているので、ターゲットの表
面近傍の空間に形成される磁場分布を調整することが出
来る。そのため、ターゲットの寸法、ターゲットの材
質、操作圧力、スパッタパワー等の条件が変化しても、
広範囲な条件の下で、ターゲットの使用効率を良好に出
来る効果を奏すようになる。
According to the present invention, the position of the ring-shaped intermediate magnet is changed by the position changing means and the distance between the ring-shaped intermediate magnet and the back surface of the target is made variable, so that it is formed in the space near the surface of the target. The magnetic field distribution can be adjusted. Therefore, even if conditions such as target size, target material, operating pressure, and sputter power change,
Under a wide range of conditions, the efficiency of using the target can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の実施例の断面図FIG. 1 is a sectional view of an embodiment of the present invention.

【図2】図1のA−A線より見た矢視図FIG. 2 is a view seen from the line AA of FIG.

【図3】この発明の実施例によって調整される磁場分布
を示すグラフ
FIG. 3 is a graph showing a magnetic field distribution adjusted according to an embodiment of the present invention.

【図4】従来のマグネトロンスパッタカソードの断面図FIG. 4 is a sectional view of a conventional magnetron sputter cathode.

【図5】図5のB−B線より見た矢視図5 is an arrow view seen from the line BB of FIG.

【符号の説明】[Explanation of symbols]

1・・・・・・・ターゲット 2・・・・・・・バッキングプレート 3・・・・・・・磁石装置 5・・・・・・・中央磁石 6a・・・・・・環状中間磁石 6b・・・・・・環状中間磁石 7・・・・・・・環状周縁磁石 11・・・・・・中央ヨーク 12・・・・・・環状周縁ヨーク 13・・・・・・環状中間ヨーク 14・・・・・・鉄製スペーサ 1 ... Target 2 ... Backing plate 3 ... Magnet device 5 ... Central magnet 6a ... Annular intermediate magnet 6b ··· Annular intermediate magnet 7 ···· Annular peripheral magnet 11 ··· Central yoke 12 ··· Annular peripheral yoke 13 .... Iron spacers

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】中央磁石の廻りを複数の環状中間磁石、環
状周縁磁石の順序でリング状に囲んでいる磁石装置をタ
ーゲット背部に配設し、ターゲットの表面近傍の空間に
湾曲した磁場を磁石装置によって形成するマグネトロン
スパッタカソードにおいて、上記中央磁石と環状周縁磁
石を固定する一方で、上記環状中間磁石のみに位置可変
手段を設け、この位置可変手段で上記環状中間磁石の位
置を可変させ、上記環状中間磁石とターゲットの裏面と
の間隔を可変自在にしたことを特徴とするマグネトロン
スパッタカソード。
1. A magnet device, which surrounds a central magnet in a ring shape in the order of a plurality of annular intermediate magnets and annular peripheral magnets, is arranged at the back of a target, and a curved magnetic field is generated in a space near the surface of the target. In the magnetron sputter cathode formed by the apparatus, while fixing the central magnet and the annular peripheral magnet, the position varying means is provided only in the annular intermediate magnet, and the position of the annular intermediate magnet is varied by the position varying means, A magnetron sputter cathode, wherein the distance between the annular intermediate magnet and the back surface of the target is variable.
JP15451192A 1992-05-20 1992-05-20 Magnetron sputtering cathode Pending JPH05320897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15451192A JPH05320897A (en) 1992-05-20 1992-05-20 Magnetron sputtering cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15451192A JPH05320897A (en) 1992-05-20 1992-05-20 Magnetron sputtering cathode

Publications (1)

Publication Number Publication Date
JPH05320897A true JPH05320897A (en) 1993-12-07

Family

ID=15585853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15451192A Pending JPH05320897A (en) 1992-05-20 1992-05-20 Magnetron sputtering cathode

Country Status (1)

Country Link
JP (1) JPH05320897A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008291337A (en) * 2007-05-28 2008-12-04 Ulvac Japan Ltd Magnetron sputtering electrode and sputtering system equipped with magnetron sputtering electrode
JP2009057622A (en) * 2007-09-03 2009-03-19 Ulvac Japan Ltd Magnetron sputtering cathode
JP2009209386A (en) * 2008-02-29 2009-09-17 Fujitsu Ltd Magnet unit for magnetron sputtering apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008291337A (en) * 2007-05-28 2008-12-04 Ulvac Japan Ltd Magnetron sputtering electrode and sputtering system equipped with magnetron sputtering electrode
JP2009057622A (en) * 2007-09-03 2009-03-19 Ulvac Japan Ltd Magnetron sputtering cathode
JP2009209386A (en) * 2008-02-29 2009-09-17 Fujitsu Ltd Magnet unit for magnetron sputtering apparatus

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