JPH0941135A - Magnetron sputtering cathode - Google Patents
Magnetron sputtering cathodeInfo
- Publication number
- JPH0941135A JPH0941135A JP19176295A JP19176295A JPH0941135A JP H0941135 A JPH0941135 A JP H0941135A JP 19176295 A JP19176295 A JP 19176295A JP 19176295 A JP19176295 A JP 19176295A JP H0941135 A JPH0941135 A JP H0941135A
- Authority
- JP
- Japan
- Prior art keywords
- magnet
- target
- annular magnet
- inner annular
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、低圧力の下でも
放電を起こすことができるマグネトロンスパッタカソー
ドに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputter cathode capable of causing a discharge even under a low pressure.
【０００２】[0002]
【従来の技術】従来のマグネトロンスパッタカソードを
図５、図６および図７に示す。図５、図６において、タ
ーゲット１はターゲット電極２の表面に取り付けられ、
また、ターゲット電極２の背後には磁石装置３が配設さ
れている。磁石装置３は、円板の形をしたマグネットプ
レート４と、このマグネットプレート４上に配置された
円形の内側環状磁石５と、この内側環状磁石５の廻りを
内側環状磁石５と一定の間隔をおいてリング状に囲むよ
うに、マグネットプレート４上に配置された円形の外側
環状磁石６とで構成されている。そして、内側環状磁石
５のターゲット電極２に隣接した先端と外側環状磁石６
のターゲット電極２に隣接した先端とは互いに極性が異
なっている。図７は棒磁石７をリング状に並べたもので
あり、棒磁石の両開放端がＮ極、Ｓ極となっている2. Description of the Related Art A conventional magnetron sputter cathode is shown in FIGS. In FIG. 5 and FIG. 6, the target 1 is attached to the surface of the target electrode 2,
A magnet device 3 is arranged behind the target electrode 2. The magnet device 3 includes a disk-shaped magnet plate 4, a circular inner annular magnet 5 arranged on the magnet plate 4, and a circumference of the inner annular magnet 5 at a constant distance from the inner annular magnet 5. A circular outer annular magnet 6 is disposed on the magnet plate 4 so as to surround it in a ring shape. The tip of the inner annular magnet 5 adjacent to the target electrode 2 and the outer annular magnet 6
The polarities are different from those of the tip adjacent to the target electrode 2. FIG. 7 shows bar magnets 7 arranged in a ring shape, and both open ends of the bar magnets are N poles and S poles.
【０００３】なお、図５および図６において、８は磁石
装置３を回転または走査させるための機構である。９は
ターゲット電極２に負バイアス電圧を印加する直流電
源、10は放電ガス導入口11と真空排気口12とが設けられ
た真空槽、13は真空槽10内にターゲット１と対向して配
設された基板、14はヒーター15が設けられた基板ホルダ
ーである。In FIGS. 5 and 6, reference numeral 8 is a mechanism for rotating or scanning the magnet device 3. Reference numeral 9 is a DC power source for applying a negative bias voltage to the target electrode 2, 10 is a vacuum chamber provided with a discharge gas introduction port 11 and a vacuum exhaust port 12, and 13 is disposed in the vacuum chamber 10 facing the target 1. A substrate holder 14 is provided with a heater 15.
【０００４】このようなマグネトロンスパッタカソード
においては、たとえば、内側環状磁石５のターゲット電
極２に隣接した先端をＮ極とし、外側環状磁石６のター
ゲット電極２に隣接した先端をＳ極とすれば、磁石装置
３の内側環状磁石５のターゲット電極２に隣接した先端
から流出した磁力線が、ターゲット１の表面近傍の空間
において湾曲してから磁石装置３の外側環状磁石６のタ
ーゲット電極２に隣接した先端に流入し、ターゲット１
の表面近傍の空間に湾曲した磁場が形成されるようにな
る。そして、真空槽10内を排気しながら放電ガスを導入
して真空槽10内の圧力を10-1Pa台に保ち、直流電源９よ
りターゲット電極２に負のバイアス電圧を印加すると、
ターゲット１の表面近傍の空間で湾曲した磁場が形成さ
れた領域に放電が起き、ターゲット１はこの放電に曝さ
れたところが放電中のイオンでスパッタされるようにな
る。In such a magnetron sputter cathode, for example, if the tip of the inner annular magnet 5 adjacent to the target electrode 2 is the N pole and the tip of the outer annular magnet 6 adjacent to the target electrode 2 is the S pole, The magnetic field lines flowing out from the tip of the inner annular magnet 5 of the magnet device 3 adjacent to the target electrode 2 are curved in the space near the surface of the target 1 and then the tip of the outer annular magnet 6 of the magnet device 3 adjacent to the target electrode 2. Into the target 1
A curved magnetic field is formed in the space near the surface of the. Then, while exhausting the inside of the vacuum chamber 10, a discharge gas is introduced to maintain the pressure in the vacuum chamber 10 at the level of 10 −1 Pa, and a negative bias voltage is applied from the DC power source 9 to the target electrode 2,
A discharge is generated in a region where a curved magnetic field is formed in a space near the surface of the target 1, and the target 1 is exposed to the discharge and is sputtered by the ions during the discharge.
【０００５】[0005]
【発明が解決しようとする課題】従来のマグネトロンス
パッタカソードは、上記のように内側環状磁石５と外側
環状磁石６との間隔を一定にしているか、または棒磁石
を並べたものから構成されているため、ターゲット１の
表面近傍の空間に形成される湾曲した磁場の強度は一定
になる。そのため、真空槽10内の圧力を１×10-1Pa以下
の低圧力にすると、ある圧力領域において放電を起こす
のに必要な磁場の強度が不足し、電源９よりターゲット
電極２に負のバイアス電圧を印加しても放電を起こすこ
とができない問題が起きた。我々の検討によれば放電開
始圧力と磁場強度の関係は図４に示すごとくであり、図
４の放電領域中にない条件では放電されることが判明し
た。A conventional magnetron sputter cathode has a constant gap between the inner annular magnet 5 and the outer annular magnet 6 as described above, or is formed by arranging bar magnets. Therefore, the strength of the curved magnetic field formed in the space near the surface of the target 1 is constant. Therefore, when the pressure in the vacuum chamber 10 is set to a low pressure of 1 × 10 −1 Pa or less, the strength of the magnetic field necessary to cause discharge in a certain pressure region is insufficient, and the power source 9 applies a negative bias to the target electrode 2. There was a problem that discharge could not occur even if a voltage was applied. According to our study, the relationship between the discharge starting pressure and the magnetic field strength is as shown in FIG. 4, and it has been found that the discharge is performed under the condition not in the discharge region of FIG.
【０００６】磁力強度の強い磁石を使用するか、または
内側環状磁石５もしくは外側環状状磁石６の径を変える
ことにより、内側環状磁石５と外側環状磁石６との間隔
を全体的に狭め、ターゲット１の表面近傍の空間に形成
される湾曲した磁場の強度を全体的に強くすると、真空
槽10内の圧力を１×10-1Pa以下の低圧力にしても放電を
起こすことが可能になるが、前者においては、入手可能
な高磁力磁石はおのずと限界があり、後者の方法におい
てはターゲット１の表面近傍の空間で湾曲した磁場が形
成される領域が狭くなるため、ターゲット１の表面近傍
の空間で起きる放電の領域が狭くなってしまう。そのた
め、ターゲット１は放電に曝されるところが狭くなり、
換言すれば、エローション領域が狭くなり、ターゲット
１の使用効率が非常に悪くなるという問題が新たに発生
する。By using a magnet having a strong magnetic force or changing the diameter of the inner annular magnet 5 or the outer annular magnet 6, the gap between the inner annular magnet 5 and the outer annular magnet 6 is narrowed as a whole, and the target is reduced. When the strength of the curved magnetic field formed in the space near the surface of 1 is increased as a whole, it is possible to cause discharge even if the pressure in the vacuum chamber 10 is a low pressure of 1 × 10 -1 Pa or less. However, in the former case, the available high magnetic force magnets are naturally limited, and in the latter method, the region where the curved magnetic field is formed in the space near the surface of the target 1 becomes narrow, so that the vicinity of the surface of the target 1 is reduced. The area of discharge that occurs in space becomes narrow. Therefore, the target 1 becomes narrower in the area exposed to the discharge,
In other words, the erosion region becomes narrower, and the problem that the efficiency of use of the target 1 is extremely deteriorated newly occurs.
【０００７】この発明の目的は、従来の上記問題を解決
して、低圧力の下でも放電を起こすことができると共
に、ターゲットの使用効率がよいマグネトロンスパッタ
カソードを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art and to provide a magnetron sputter cathode capable of causing a discharge even under a low pressure and having a high use efficiency of a target.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、この発明のマグネトロンスパッタカソードは、内側
環状磁石の廻りをこの内側環状磁石と間隔をおいて外側
環状磁石でリング状に囲んでいる磁石装置をターゲット
の背後に配設し、この磁石装置によってターゲットの表
面近傍の空間に湾曲した磁場を形成するマグネトロンス
パッタカソードにおいて、上記磁石装置の内側環状磁石
と外側環状磁石との間隔に広狭をつけ、上記ターゲット
の表面近傍の空間に形成される湾曲した磁場の強度に強
弱をつけることを特徴とするものである。To achieve the above object, in the magnetron sputtering cathode of the present invention, the circumference of the inner ring magnet is surrounded by the outer ring magnet in a ring shape with a space from the inner ring magnet. In a magnetron sputter cathode in which a magnet device is arranged behind the target and a curved magnetic field is formed in the space near the surface of the target by the magnet device, the gap between the inner annular magnet and the outer annular magnet of the magnet device is widened. In addition, the strength of the curved magnetic field formed in the space near the surface of the target is increased or decreased.
【０００９】[0009]
【作用】この発明においては、磁石装置の内側環状磁石
と外側環状磁石との間隔に広狭をつけ、ターゲットの表
面近傍の空間に形成される湾曲した磁場の強度に強弱を
つけているので、磁石装置の内側環状磁石と外側環状磁
石との間隔を狭め、ターゲットの表面近傍の空間に形成
される湾曲した磁場の強度を強めたところでは、低圧力
の下でも放電が起きるようになる。そして、この放電が
種放電となって磁場に沿って広がってゆき、内側環状磁
石と外側環状磁石との間隔を広げ、ターゲットの表面近
傍の空間に形成される湾曲した磁場の強度を弱めたとこ
ろでも放電が起きるようになる。According to the present invention, the gap between the inner ring magnet and the outer ring magnet of the magnet device is widened to weaken the strength of the curved magnetic field formed in the space near the surface of the target. When the gap between the inner ring magnet and the outer ring magnet of the device is narrowed and the strength of the curved magnetic field formed in the space near the surface of the target is increased, the discharge can be generated even under a low pressure. Then, this discharge becomes a seed discharge and spreads along the magnetic field, widening the distance between the inner annular magnet and the outer annular magnet, and weakening the strength of the curved magnetic field formed in the space near the surface of the target. Will also be discharged.
【００１０】また、ターゲットの表面近傍の空間で湾曲
した磁場が形成される領域も広くなるため、ターゲット
の表面近傍の空間で起きる放電領域が広がり、ターゲッ
ト使用効率がよくなる。Further, since the region where the curved magnetic field is formed in the space near the surface of the target is also widened, the discharge region occurring in the space near the surface of the target is widened and the target is used efficiently.
【００１１】[0011]
【発明の実施の形態】以下、この発明の実施の形態を図
示実施例に基づいて説明する。Embodiments of the present invention will be described below with reference to the drawings.
【実施例】この発明の第１実施例のマグネトロンスパッ
タカソードは従来のものを改良したもので図１および図
２に示されている。これらの図において、ターゲット21
はターゲット電極22の表面に取り付けられ、また、ター
ゲット電極22の背後には磁石装置23が配設されている。
磁石装置23は、円板の形をしたマグネットプレート24
と、このマグネットプレート24の中心軸より中心軸をず
らしてマグネットプレート24上に配置された円形の内側
環状磁石25と、この内側環状磁石25の廻りを、マグネッ
トプレート24の円周側においては内側環状磁石25と狭い
間隔をおき、マグネットプレート24の外周側においては
内側環状磁石25と広い間隔をおいてリング状に囲むよう
に、マグネットプレート24上に配置された円形の外側環
状磁石26とで構成されている。そして、内側環状磁石25
のターゲット電極22に隣接した先端はＮ極となり、ま
た、外側環状磁石26のターゲット電極22に隣接した先端
はＳ極となっている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The magnetron sputter cathode of the first embodiment of the present invention is an improved version of the conventional one and is shown in FIGS. In these figures, target 21
Is attached to the surface of the target electrode 22, and a magnet device 23 is arranged behind the target electrode 22.
The magnet device 23 includes a magnet plate 24 in the shape of a disk.
And a circular inner annular magnet 25 arranged on the magnet plate 24 with the central axis displaced from the central axis of the magnet plate 24, and the circumference of the inner annular magnet 25, the inner side on the circumferential side of the magnet plate 24. A circular outer annular magnet 26 is arranged on the magnet plate 24 so as to have a narrow interval with the annular magnet 25, and to surround the inner annular magnet 25 with a wide interval on the outer peripheral side of the magnet plate 24 in a ring shape. It is configured. And the inner ring magnet 25
The tip of the outer annular magnet 26 adjacent to the target electrode 22 has an N pole, and the tip of the outer annular magnet 26 adjacent to the target electrode 22 has an S pole.
【００１２】次に、図３に示すこの発明の第２実施例に
ついて説明する。同図において、外側環状磁石26は、内
側環状磁石25の廻りを、マグネットプレート24の内周側
においては内側環状磁石25と広い間隔をおき、マグネッ
トプレート24の外周側においては内側環状磁石25と狭い
間隔をおいてリング状に囲むように、マグネットプレー
ト24上に配置されている。Next, a second embodiment of the present invention shown in FIG. 3 will be described. In the figure, the outer annular magnet 26 has a wide space around the inner annular magnet 25, which is spaced apart from the inner annular magnet 25 on the inner peripheral side of the magnet plate 24 and the inner annular magnet 25 on the outer peripheral side of the magnet plate 24. It is arranged on the magnet plate 24 so as to surround it in a ring shape with a narrow interval.
【００１３】このような第１実施例および第２実施例に
おいては、磁石装置23の内側環状磁石25と外側環状磁石
26との間隔に広狭をつけ、ターゲット21の表面近傍の空
間に形成される湾曲した磁場の強度に強弱をつけている
ので、磁石装置23の内側環状磁石25と外側環状磁石26と
の間隔を狭め、ターゲット21の表面近傍の空間に形成さ
れる湾曲した磁場の強度を強めたところでは、低圧力の
下でも放電が起きるようになる。そして、この放電が種
放電となって磁場に沿って広がってゆき、内側環状磁石
25と外側環状磁石26との間隔を広げ、ターゲット21の表
面近傍の空間に形成される湾曲した磁場の強度を弱めた
ところでも放電が起きるようになる。In the first and second embodiments, the inner ring magnet 25 and the outer ring magnet of the magnet device 23 are used.
The gap between the inner and outer magnets 26 of the magnet device 23 is set to be wide and narrow, and the strength of the curved magnetic field formed in the space near the surface of the target 21 is weakened. At a place where the strength of the curved magnetic field formed in the space near the surface of the target 21 is made narrower, the electric discharge is generated even under a low pressure. Then, this discharge becomes a seed discharge and spreads along the magnetic field.
Discharge will occur even if the distance between the outer ring magnet 25 and the outer ring magnet 26 is widened to weaken the strength of the curved magnetic field formed in the space near the surface of the target 21.
【００１４】また、ターゲット21の表面近傍の空間で湾
曲した磁場が形成される領域が広くなるため、ターゲッ
ト21の表面近傍の空間で起きる放電の領域が広くなる。
そのため、ターゲット21は放電に曝されるところが広く
なり、ターゲット21の使用効率がよくなる。Further, since the region where the curved magnetic field is formed is wide in the space near the surface of the target 21, the region of the discharge occurring in the space near the surface of the target 21 is wide.
Therefore, the target 21 is exposed to a wider area, and the target 21 is used more efficiently.
【００１５】例えば、内側環状磁石25と外側環状磁石26
との間隔を狭め、ターゲット21の表面近傍の空間に形成
される湾曲した磁場の強度を強めたところの水平磁場の
強度を53mT（ミリテスラ）、内側環状磁石25と外側環状
磁石26との間隔を広げ、ターゲット21の表面近傍の空間
に形成される湾曲した磁場の強度を弱めたところの水平
磁場の強度を35mTとすると、真空槽内の圧力を５×10-2
Paの低圧力にしても放電を起こすことができた。これ
は、図４に示すターゲット21の表面近傍の空間に形成さ
れる湾曲した磁場の水平磁場の強度と、放電を起こすこ
とができる真空槽内の圧力との関係を満たさず、磁石配
置に広狭をつけることにより、低圧力でより放電が容易
になったことを示している。For example, the inner annular magnet 25 and the outer annular magnet 26
The horizontal magnetic field strength is 53 mT (millitesla) when the curved magnetic field formed in the space near the surface of the target 21 is strengthened by narrowing the distance between the inner ring magnet 25 and the outer ring magnet 26. If the horizontal magnetic field strength is 35 mT when the strength of the curved magnetic field formed in the space near the surface of the target 21 is weakened, the pressure in the vacuum chamber is 5 × 10 -2.
Even with a low pressure of Pa, discharge could be generated. This does not satisfy the relationship between the strength of the horizontal magnetic field of the curved magnetic field formed in the space near the surface of the target 21 shown in FIG. 4 and the pressure in the vacuum chamber capable of causing discharge, and the magnet arrangement is wide and narrow. It is shown that the discharge becomes easier at a low pressure by adding a mark.
【００１６】ところで、上記実施例では、磁石装置23の
内側環状磁石25および外側環状磁石26の形状を円形とし
ているが、この形状は円形以外であってもよい。By the way, in the above embodiment, the inner annular magnet 25 and the outer annular magnet 26 of the magnet device 23 are circular in shape, but the shapes may be other than circular.
【００１７】[0017]
【発明の効果】この発明は、上記のように、磁石装置の
内側環状磁石と外側環状磁石との間隔に広狭をつけ、タ
ーゲットの表面近傍の空間に形成される湾曲した磁場の
強度に強弱をつけているので、磁石装置の内側環状磁石
と外側環状磁石との間隔を狭め、ターゲットの表面近傍
の空間に形成される湾曲した磁場の強度を強めたところ
では、低圧力の下でも放電が起きるようになる。そし
て、この放電が種放電となって磁場に沿って広がってゆ
き、内側環状磁石と外側環状磁石との間隔を広げ、ター
ゲットの表面近傍の空間に形成される湾曲した磁場の強
度を弱めたところでも放電が起きるようになる。As described above, according to the present invention, the gap between the inner annular magnet and the outer annular magnet of the magnet device is widened to increase or decrease the strength of the curved magnetic field formed in the space near the surface of the target. Since it is attached, the gap between the inner annular magnet and the outer annular magnet of the magnet device is narrowed, and at the place where the strength of the curved magnetic field formed in the space near the surface of the target is strengthened, discharge occurs even under low pressure Like Then, this discharge becomes a seed discharge and spreads along the magnetic field, widening the distance between the inner annular magnet and the outer annular magnet, and weakening the strength of the curved magnetic field formed in the space near the surface of the target. Will also be discharged.
【００１８】また、ターゲットの表面近傍の空間で湾曲
した磁場が形成される領域が広くなるため、ターゲット
の表面近傍の空間で起きる放電の領域が広くなる。その
ため、ターゲットは放電に曝されるところが広くなり、
ターゲットの使用効率がよくなる。Further, since the region where the curved magnetic field is formed becomes wider in the space near the surface of the target, the region of discharge occurring in the space near the surface of the target becomes wider. As a result, the target will be exposed to a wider area,
Uses the target more efficiently.
【図１】 この発明の第１実施例の断面図。FIG. 1 is a sectional view of a first embodiment of the present invention.
【図２】 図１のＡ−Ａ線より見た矢視図。FIG. 2 is a view seen from the line AA of FIG.
【図３】 この発明の第２実施例の要部を示す説明図。FIG. 3 is an explanatory diagram showing a main part of a second embodiment of the present invention.
【図４】 ターゲットの表面近傍の空間に形成される湾
曲した磁場の水平磁場の強度と、放電を起こすことがで
きる真空槽内の圧力との関係を示すグラフ。FIG. 4 is a graph showing the relationship between the horizontal magnetic field strength of a curved magnetic field formed in the space near the surface of the target and the pressure in the vacuum chamber capable of causing a discharge.
【図５】 従来のマグネトロンスパッタカソードの断面
図。FIG. 5 is a sectional view of a conventional magnetron sputter cathode.
【図６】 図４のＢ−Ｂ線より見た矢視図。FIG. 6 is a view seen from the line BB of FIG.
【図７】 従来のマグネトロンスパッタカソードの別の
例の要部の概略図。FIG. 7 is a schematic view of a main part of another example of a conventional magnetron sputter cathode.
21・・・・ターゲット 22・・・・ターゲット電極 23・・・・磁石装置 24・・・・マグネットプレート 25・・・・内側環状磁石 26・・・・外側環状磁石 21 ・ ・ ・ ・ Target 22 ・ ・ ・ ・ Target electrode 23 ・ ・ ・ ・ ・ ・ Magnet device 24 ・ ・ ・ ・ Magnet plate 25 ・ ・ ・ ・ Inner ring magnet 26 ・ ・ ・ ・ Outer ring magnet
フロントページの続き (72)発明者 永谷 浩治 鹿児島県姶良郡横川町上ノ3313 アルバッ ク九州株式会社鹿児島事業所内Front Page Continuation (72) Inventor Koji Nagatani 3313 Ueno, Yokokawa-cho, Aira-gun, Kagoshima Aruba Kyushu Co., Ltd. Kagoshima Plant
Claims (1)
と間隔をおいて外側環状磁石でリング状に囲んでいる磁
石装置をターゲットの背後に配設し、この磁石装置によ
ってターゲットの表面近傍の空間に湾曲した磁場を形成
するマグネトロンスパッタカソードにおいて、上記磁石
装置の内側環状磁石と外側環状磁石との間隔に広狭をつ
け、上記ターゲットの表面近傍の空間に形成される湾曲
した磁場の強度に強弱をつけることを特徴とするマグネ
トロンスッパタカソード。1. A magnet device, which surrounds the inner annular magnet around the inner annular magnet in a ring shape with an outer annular magnet, is arranged behind the target, and the magnet device is provided near the surface of the target. In a magnetron sputter cathode that forms a curved magnetic field in space, the gap between the inner annular magnet and the outer annular magnet of the magnet device is widened to increase or decrease the strength of the curved magnetic field formed in the space near the surface of the target. Magnetron spatter cathode, which is equipped with a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19176295A JP3629305B2 (en) | 1995-07-27 | 1995-07-27 | Magnetron sputter cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19176295A JP3629305B2 (en) | 1995-07-27 | 1995-07-27 | Magnetron sputter cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0941135A true JPH0941135A (en) | 1997-02-10 |
| JP3629305B2 JP3629305B2 (en) | 2005-03-16 |
Family
ID=16280096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19176295A Expired - Lifetime JP3629305B2 (en) | 1995-07-27 | 1995-07-27 | Magnetron sputter cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3629305B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6183614B1 (en) | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
| US6290825B1 (en) | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
| US6440282B1 (en) | 1999-07-06 | 2002-08-27 | Applied Materials, Inc. | Sputtering reactor and method of using an unbalanced magnetron |
| US6491801B1 (en) | 2001-08-07 | 2002-12-10 | Applied Materials, Inc. | Auxiliary vertical magnet outside a nested unbalanced magnetron |
| US6497802B2 (en) | 1999-02-12 | 2002-12-24 | Applied Materials, Inc. | Self ionized plasma sputtering |
| US6663754B2 (en) | 2001-04-13 | 2003-12-16 | Applied Materials, Inc. | Tubular magnet as center pole in unbalanced sputtering magnetron |
| US6790323B2 (en) | 1999-02-12 | 2004-09-14 | Applied Materials, Inc. | Self ionized sputtering using a high density plasma source |
| US7485210B2 (en) | 2004-10-07 | 2009-02-03 | International Business Machines Corporation | Sputtering target fixture |
| JP2012136780A (en) * | 2012-02-13 | 2012-07-19 | Ulvac Japan Ltd | Magnet system, magnetron sputtering apparatus |
-
1995
- 1995-07-27 JP JP19176295A patent/JP3629305B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6183614B1 (en) | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
| US6290825B1 (en) | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
| US6497802B2 (en) | 1999-02-12 | 2002-12-24 | Applied Materials, Inc. | Self ionized plasma sputtering |
| US6790323B2 (en) | 1999-02-12 | 2004-09-14 | Applied Materials, Inc. | Self ionized sputtering using a high density plasma source |
| US7335282B2 (en) | 1999-02-12 | 2008-02-26 | Jianming Fu | Sputtering using an unbalanced magnetron |
| US6440282B1 (en) | 1999-07-06 | 2002-08-27 | Applied Materials, Inc. | Sputtering reactor and method of using an unbalanced magnetron |
| US6663754B2 (en) | 2001-04-13 | 2003-12-16 | Applied Materials, Inc. | Tubular magnet as center pole in unbalanced sputtering magnetron |
| US6491801B1 (en) | 2001-08-07 | 2002-12-10 | Applied Materials, Inc. | Auxiliary vertical magnet outside a nested unbalanced magnetron |
| US7485210B2 (en) | 2004-10-07 | 2009-02-03 | International Business Machines Corporation | Sputtering target fixture |
| US8157970B2 (en) | 2004-10-07 | 2012-04-17 | International Business Machines Corporation | Sputtering target fixture |
| JP2012136780A (en) * | 2012-02-13 | 2012-07-19 | Ulvac Japan Ltd | Magnet system, magnetron sputtering apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3629305B2 (en) | 2005-03-16 |
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