JPH05319945A - Brazing material for producing ceramic substrate joined to metallic plate - Google Patents

Brazing material for producing ceramic substrate joined to metallic plate

Info

Publication number
JPH05319945A
JPH05319945A JP15558192A JP15558192A JPH05319945A JP H05319945 A JPH05319945 A JP H05319945A JP 15558192 A JP15558192 A JP 15558192A JP 15558192 A JP15558192 A JP 15558192A JP H05319945 A JPH05319945 A JP H05319945A
Authority
JP
Japan
Prior art keywords
brazing material
ceramic substrate
metal
oxide
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15558192A
Other languages
Japanese (ja)
Inventor
Yasutaka Ito
康隆 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP15558192A priority Critical patent/JPH05319945A/en
Publication of JPH05319945A publication Critical patent/JPH05319945A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To uniformly disperse a joined part and an unjoined part in the joining face of a ceramic substrate and a metallic plate and prevent concentration of stress and improve thermal shock resistance by uniformly including an oxide in a prescribed amount in a brazing material. CONSTITUTION:The brazing material is formed of powder having 0.1-10mum average particle diameter and has 0.01-2mum thickness and contains 0.01-50wt.% oxide. This brazing material can be formed of mixed powder of oxide particles having 0.1-8mum average particle diameter and a brazing material powder having 0.1-10mum average particle diameter. Further, this brazing material can be formed of silver of a main component and 0.1-10wt.% active metal selected from among titanium, niobium and zirconia. A joined part and unjoined part are uniformly dispersed in a joining face of the ceramic substrate and the metallic plate and concentration of stress is prevented by the brazing material uniformly containing this oxide to provide a ceramic substrate joined to a metallic plate, excellent in thermal shock resistance.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、金属板接合セラミック
基板を製造するためのろう材に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a brazing material for producing a metal plate bonded ceramic substrate.

【0002】[0002]

【従来の技術】従来、セラミック基板表面に金属板を冶
金的に接合する方法としては、種々の方法が知られてい
る。例えば、 1.セラミック基板の表面にモリブデンとタングステン
を主成分とする粉末と有機バインダ−の混合物を塗布
し、加湿した雰囲気中で1400〜1700℃に加熱し
て反応させることにより金属層を形成させた後、前記金
属層表面にNiメッキを施し、次いで、該Niメッキに
金属板(例えば銅板)をPb−Sn系ハンダなどにより
接合する方法。 2.金属板とセラミック基板とをAu,Ptのような貴
金属、つまり酸素との親和力の小さい金属を主成分とす
る合金を用いて接合する方法。 3.金属板とセラミック基板との接合部にTi,Nb,
Zrなどの活性金属または熱処理によって活性金属に変
換される活性金属水素化物を介在させた後、高温,高圧
下で接合する方法等が知られている。
2. Description of the Related Art Conventionally, various methods have been known as methods for metallurgically joining a metal plate to the surface of a ceramic substrate. For example, 1. A mixture of a powder containing molybdenum and tungsten as main components and an organic binder is applied to the surface of the ceramic substrate, and the mixture is heated to 1400 to 1700 ° C. in a humidified atmosphere to react with each other to form a metal layer. A method of applying Ni plating to the surface of the metal layer, and then joining a metal plate (for example, a copper plate) to the Ni plating with Pb-Sn solder or the like. 2. A method of joining a metal plate and a ceramic substrate using a noble metal such as Au or Pt, that is, an alloy whose main component is a metal having a small affinity for oxygen. 3. At the joint between the metal plate and the ceramic substrate, Ti, Nb,
A method is known in which an active metal such as Zr or an active metal hydride that is converted into an active metal by heat treatment is interposed and then bonded at high temperature and high pressure.

【0003】しかしながら、上記1の方法は、エレクト
ロニクス部品において、絶縁体としてのセラミック基板
表面に導体としての銅板を接合する場合に多用されてい
る方法であるが、工程数が多く煩雑であるという欠点を
有し、上記2の方法は、簡単な工程で接合できるもの
の、高価な貴金属を使用するため経済的ではなく、しか
も金属母材とセラミックス母材が十分に接触するように
高い圧力を必要として、変形を嫌うエレクトロニクス部
品などの接合には好ましくない。さらに、上記3の方法
では、活性金属により強固な接合を行えるものの、高い
接合圧力を必要とするため前記2の方法と同様、変形を
嫌うエレクトロニクス部品などの接合には好ましくない
という欠点を有していた。
However, the above-mentioned method 1 is often used in the case of joining a copper plate as a conductor to the surface of a ceramic substrate as an insulator in an electronic component, but has a drawback that it involves many steps and is complicated. Although the above method 2 can be joined in a simple process, it is not economical because it uses an expensive noble metal, and requires high pressure so that the metal base material and the ceramic base material come into sufficient contact with each other. However, it is not preferable for joining electronic parts and the like that are not susceptible to deformation. Further, the above method 3 has a drawback that it is not preferable for bonding electronic parts which are not susceptible to deformation, like the above method 2, although strong bonding can be achieved by the active metal, but high bonding pressure is required. Was there.

【0004】このようなことから、例えばTi,Zrな
どの活性金属とCu,Ni,Feなどの遷移金属との合
金を使用し、その共晶組成領域で活性金属の単体の融点
(Ti;1720℃、Zr;1860℃)および遷移金
属単体の融点(Cu;1083℃,Ni;1453℃,
Fe;1534℃)と比較して融点が数100℃低いこ
とに着目し、遷移金属母材とセラミックス母材との接合
部に活性金属を介在させ、該接合部を遷移金属および活
性金属の合金の融点より高く、遷移金属の融点より低い
温度に加熱し、遷移金属と活性金属との原子を相互に拡
散させて合金化し、この合金によって遷移金属母材とセ
ラミックス母材とを接合する方法が米国特許第2857
663号明細書に開示されている。かかる方法によれ
ば、接合時において接合部に遷移金属と活性金属との合
金の融液により満たされ、金属母材とセラミックス母材
とを濡らすので、各母材を十分接触させるための接合時
の加圧をほとんど必要とせず、かつ、活性金属の効果に
よりそれら母材を強固に接合できる。
For this reason, for example, an alloy of an active metal such as Ti or Zr and a transition metal such as Cu, Ni or Fe is used, and the melting point (Ti; 1720) of the active metal alone is used in the eutectic composition region. ℃, Zr; 1860 ℃) and melting point of the transition metal simple substance (Cu; 1083 ℃, Ni; 1453 ℃,
Fe; 1534 ° C.), the melting point is several hundred ° C. lower than that of Fe; 1534 ° C.), and an active metal is interposed in the joint between the transition metal base material and the ceramic base material, and the joint portion is an alloy of the transition metal and the active metal. Is higher than the melting point of the transition metal and lower than the melting point of the transition metal, the atoms of the transition metal and the active metal are mutually diffused to form an alloy, and the alloy is used to join the transition metal base material and the ceramic base material. U.S. Pat. No. 2857
No. 663 is disclosed. According to such a method, the joining portion is filled with the melt of the alloy of the transition metal and the active metal at the time of joining and wets the metal base material and the ceramic base material, so that the base materials are sufficiently contacted at the time of joining. Almost no pressurization is required, and the base materials can be strongly bonded by the effect of the active metal.

【0005】ところで、金属とセラミックとは原子結合
状態が全く異なる物質である。このため金属とセラミッ
クスとを接合する場合、それらの反応性などの化学的性
質、熱膨張率、電気電導度などの物理的性質は大きく異
なる。従って、金属とセラミックとの接合部材に熱衝撃
を加えると、セラミック自体にクラックが発生する欠点
があり、金属とセラミックとを冶金的に接合し、熱衝撃
に対する耐久性に優れた信頼性の高い接合体を得ること
は極めて困難であった。
By the way, metals and ceramics are substances having completely different atomic bonding states. Therefore, when metals and ceramics are joined, their chemical properties such as reactivity, physical properties such as coefficient of thermal expansion, and electrical conductivity are greatly different. Therefore, when a thermal shock is applied to the joining member of the metal and the ceramic, the ceramic itself has a defect that cracks occur, and the metal and the ceramic are metallurgically joined to each other, which is excellent in durability against thermal shock and has high reliability. Obtaining a bonded body was extremely difficult.

【0006】[0006]

【発明が解決しようとする課題】本発明は、前述のよう
な欠点を解決し、熱衝撃に対する耐久性に優れた信頼性
の高い金属板接合セラミック基板を製造するためのろう
材を提供することを目的とするものである。
DISCLOSURE OF THE INVENTION The present invention solves the above-mentioned drawbacks and provides a brazing material for producing a highly reliable metal plate-bonded ceramic substrate having excellent durability against thermal shock. The purpose is.

【0007】[0007]

【課題を解決するための手段および作用】本発明者は、
前述の如き課題を解決すべく鋭意研究した結果、酸化物
を均一に存在させたろう材によって、セラミック基板と
金属板とを接合面内に接合部分と非接合部分をほぼ均一
に分散した状態で存在させ接合することができ、接合面
内における応力の集中を防止でき、耐熱衝撃性が著しく
向上した金属板接合セラミック基板を製造することがで
きることを新規に知見するに至り、本発明を完成した。
Means and Actions for Solving the Problems
As a result of earnest research to solve the above-mentioned problems, as a result of the brazing filler metal in which the oxide is uniformly present, the ceramic substrate and the metal plate are present in the joint surface with the joint portion and the non-joint portion being almost evenly dispersed. The present invention has been completed based on the new finding that it is possible to manufacture a metal plate bonded ceramic substrate that can be bonded by performing the bonding, prevent concentration of stress in the bonding surface, and have significantly improved thermal shock resistance.

【0008】以下、本発明を詳細に説明する。本発明の
ろう材は、酸化物を含有するものであることが必要であ
る。その理由は、前記ろう材はセラミック基板と金属板
とを接合せしめるためのものであり、酸化物を含有する
ろう材を使用して接合すると、セラミック基板と金属板
との接合時に接合面の界面に酸化物が存在するため、接
合面に非接合部分を生成せしめた状態で接合させること
ができ、接合面内における応力の集中を防止し、耐熱衝
撃性が著しく向上した金属板接合セラミック基板を製造
することができるからである。
The present invention will be described in detail below. The brazing material of the present invention needs to contain an oxide. The reason is that the brazing material is used for joining the ceramic substrate and the metal plate, and when the brazing material containing an oxide is used for joining, the interface between the joining surfaces at the time of joining the ceramic substrate and the metal plate. Since the oxide is present in the joint, it can be joined in a state where a non-joint portion is created on the joint surface, prevents the concentration of stress in the joint surface, and improves the thermal shock resistance of the metal plate-bonded ceramic substrate. This is because it can be manufactured.

【0009】本発明のろう材は、酸化物を0.01〜5
0重量%含有するものであることが必要である。その理
由は、前記酸化物が0.01重量%より少ないとセラミ
ック基板と金属板との接合面に酸化物を均一に存在させ
ることが困難で、接合面に非接合部分を生成量が不十分
になり易く、一方50重量%より多いとセラミック基板
と金属板との接合面の非接合部分が多くなるため強固な
接合を得ることが困難になるからである。
The brazing material of the present invention contains an oxide in an amount of 0.01-5.
It is necessary that the content is 0% by weight. The reason is that if the amount of the oxide is less than 0.01% by weight, it is difficult to make the oxide evenly present on the joint surface between the ceramic substrate and the metal plate, and the amount of non-joint portion formed on the joint surface is insufficient. On the other hand, if it is more than 50% by weight, it is difficult to obtain a strong bond because the non-bonded portion of the bonded surface between the ceramic substrate and the metal plate increases.

【0010】本発明のろう材は、平均粒径が0.1〜1
0μmの粉末であって、0.01〜2μmの厚さの酸化
被膜を有してなるものであることが好ましい。前記ろう
材が、平均粒径が0.1〜10μmの粉末よりなるもの
であることが好ましい理由は、前記範囲の粒径を有する
粉末からなるろう材は均一なろう材層を形成することが
容易であるからであり、また、前記ろう材の酸化被膜の
厚さが0.01〜2μmであることが好ましい理由は、
前記酸化被膜の厚さが、0.01μmより薄いとセラミ
ック基板と金属板との接合面に酸化物を均一に存在させ
ることが困難で、接合面に非接合部分を生成量が不十分
になり易く、一方2μmより厚いとセラミック基板と金
属板との接合が不完全になり易く強固な接合を得ること
が困難になるからである。
The brazing material of the present invention has an average particle size of 0.1 to 1
The powder is preferably 0 μm and has an oxide film with a thickness of 0.01 to 2 μm. The reason why the brazing material is preferably made of powder having an average particle diameter of 0.1 to 10 μm is that the brazing material made of powder having a particle diameter in the above range forms a uniform brazing material layer. This is because it is easy, and the reason why the thickness of the oxide film of the brazing material is preferably 0.01 to 2 μm is
When the thickness of the oxide film is less than 0.01 μm, it is difficult to make the oxide uniformly exist on the joint surface between the ceramic substrate and the metal plate, and the amount of non-joint portion formed on the joint surface becomes insufficient. On the other hand, if it is thicker than 2 μm, the bonding between the ceramic substrate and the metal plate is likely to be incomplete and it becomes difficult to obtain a strong bonding.

【0011】本発明のろう材は、平均粒径が0.1〜8
μmの酸化物粒子と平均粒径が0.1〜10μmのろう
材粉末との混合粉末であることが好ましい。前記ろう材
が、平均粒径が0.1〜8μmの酸化物粒子を含有する
ものであることが好ましい理由は、平均粒径が0.1〜
8μmの酸化物粒子を含有することによってセラミック
基板と金属板との接合面に酸化物を均一に存在させるこ
とができるからであり、また前記ろう材が、前記範囲の
粉末であることが好ましい理由は、容易に均一なろう材
層を形成することができるからである。
The brazing material of the present invention has an average particle size of 0.1-8.
A mixed powder of oxide particles of μm and a brazing filler metal powder having an average particle size of 0.1 to 10 μm is preferable. The reason why the brazing material preferably contains oxide particles having an average particle diameter of 0.1 to 8 μm is that the average particle diameter is 0.1 to 0.1 μm.
This is because the inclusion of 8 μm oxide particles enables the oxide to be uniformly present on the joint surface between the ceramic substrate and the metal plate, and the reason why the brazing material is preferably a powder in the above range The reason is that a uniform brazing material layer can be easily formed.

【0012】本発明のろう材は、厚さが1〜100μm
の薄板であり、0.1〜100μmの酸化物粒子を含有
してなるものであることが好ましい。前記ろう材が、厚
さが前記範囲の薄板であることが好ましい理由は、厚さ
が1μmより薄いとろう材層を均一に形成することが困
難であるからであり、一方100μmより厚いと強固な
接合をすることが困難になるからである。また内部に前
記範囲内の酸化物粒子を含有してなるものであることが
好ましい理由は、前記酸化物粒子の粒径が0.1μmよ
り小さいと酸化物を界面に均一に分散させて存在させる
ことが困難であるからであり、一方100μmより厚い
と接合面の非接合部分が多くなるため強固な接合を得る
ことが困難になるからである。
The brazing material of the present invention has a thickness of 1 to 100 μm.
It is preferable that it is a thin plate containing 0.1 to 100 μm of oxide particles. The reason why the brazing filler metal is preferably a thin plate having a thickness within the above range is that it is difficult to uniformly form a brazing filler metal layer when the thickness is less than 1 μm, whereas when the brazing filler metal layer is thicker than 100 μm, it is strong. This is because it becomes difficult to perform proper joining. Further, the reason why it is preferable to contain the oxide particles within the above range inside is that when the particle size of the oxide particles is smaller than 0.1 μm, the oxide is present evenly dispersed at the interface. On the other hand, if it is thicker than 100 μm, the non-bonded portion of the bonded surface increases, and it becomes difficult to obtain a strong bond.

【0013】本発明のろう材は、銀を主成分とし、チタ
ン、ニオブおよびジルコニアから選択されるいずれか少
なくとも一種の活性金属を0.1〜10重量%含有して
なるものであることが好ましい。前記ろう材が、チタ
ン、ニオブおよびジルコニアから選択されるいずれか少
なくとも一種の活性金属を含有してすることが好ましい
理由は、前記活性金属は、セラミック基板に拡散し易く
セラミック基板に容易に拡散層を形成し、セラミック基
板とろう材とを極めて強固に接合することができるから
である。前記活性金属は、セラミック基板のろう材との
接触面において基板に拡散し、セラミック基板とろう材
とを強固に接合せしめるものと考えられる。また、前記
活性金属の含有量が、0.1〜10重量%であることが
好ましい理由は、前記活性金属の含有量が0.1重量%
より少ないとセラミックに活性金属の拡散層を十分に形
成することが困難で接合強度が不十分になり易く、一方
10重量%より多いとろう材の延性が著しく低下し、冷
却時の熱応力の吸収が不十分になるためセラミックにク
ラックが生じ易いばかりでなく、セラミック内の拡散層
が必要以上に厚くなりセラミック自体の強度劣化が生じ
易いからである。
The brazing material of the present invention preferably contains silver as a main component and 0.1 to 10% by weight of at least one active metal selected from titanium, niobium and zirconia. .. The reason why the brazing material preferably contains at least one active metal selected from titanium, niobium and zirconia is that the active metal easily diffuses into the ceramic substrate and easily diffuses into the ceramic substrate. This is because the ceramic substrate and the brazing filler metal can be bonded to each other extremely strongly. It is considered that the active metal diffuses into the substrate at the contact surface of the ceramic substrate with the brazing material to firmly bond the ceramic substrate and the brazing material. The reason why the content of the active metal is preferably 0.1 to 10% by weight is that the content of the active metal is 0.1% by weight.
If it is less than 10% by weight, it is difficult to sufficiently form a diffusion layer of an active metal on the ceramic and the joint strength tends to be insufficient. This is because not only absorption is insufficient but cracks are likely to occur in the ceramic, but also the diffusion layer in the ceramic becomes unnecessarily thick and the strength of the ceramic itself tends to deteriorate.

【0014】以下、本発明のろう材を使用した金属板接
合セラミック基板の製造方法の一例について述べる。本
発明のろう材を使用する場合には、例えば、セラミック
基板に金属板をろう材を介して載置し、700℃まで酸
化性雰囲気中で焼成し、次いで非酸化性雰囲気中で75
0〜950℃に約10分間加熱することにより金属板を
接合することができる。前述の如き条件で接合すること
によって、セラミック基板と金属板との接合面内に接合
部分と非接合部分がほぼ均一に分散した状態で存在させ
ることができ、応力の集中を防止し、耐熱衝撃性が著し
く向上した金属板接合セラミック基板を製造することが
できる。
An example of a method for producing a metal plate-bonded ceramic substrate using the brazing material of the present invention will be described below. When the brazing material of the present invention is used, for example, a metal plate is placed on a ceramic substrate via the brazing material, fired up to 700 ° C. in an oxidizing atmosphere, and then in a non-oxidizing atmosphere.
The metal plates can be joined by heating to 0 to 950 ° C. for about 10 minutes. By joining under the conditions as described above, the joined portion and the non-joined portion can be present in the joining surface of the ceramic substrate and the metal plate in a substantially evenly dispersed state, preventing the concentration of stress and preventing thermal shock. It is possible to manufacture a metal plate-bonded ceramic substrate having significantly improved properties.

【0015】本発明の金属板接合セラミック基板は、接
合面に対する非接合部分の面積比率が0.01から50
%であることが有利である。その理由は、前記面積比率
が0.01%より低いと熱膨張収縮に起因する応力を吸
収する効果が殆ど期待できないからであり、一方50%
より高いと十分な接合強度が得られないであるからであ
る。
In the metal plate-bonded ceramic substrate of the present invention, the area ratio of the non-bonded portion to the bonded surface is 0.01 to 50.
% Is advantageous. The reason is that if the area ratio is lower than 0.01%, the effect of absorbing stress due to thermal expansion and contraction can hardly be expected, while 50%
This is because if it is higher, sufficient bonding strength cannot be obtained.

【0016】本発明の金属板接合セラミック基板の接合
部分は、0.01〜100mm2 の島状の接合部分が、
点在してなるものであるか、または1〜104 μm2
島状の非接合部分が島状に点在してなるものであること
が好ましい。その理由は、上記のような形態とすること
により、接合部において発生する応力を分散させ微小化
し、接合面端部における応力を低減させるため、接合強
度のバラツキが小さく、かつ応力の集中を受け難い接合
を得ることができるからである。本発明のろう材は、ア
ルミナ、ムライト、コージェライト等の酸化物基板や窒
化珪素、窒化アルミニウム等の非酸化物基板に好適であ
る。
The metal plate-bonded ceramic substrate of the present invention has an island-shaped bond of 0.01 to 100 mm 2 at the bond.
It is preferable that the particles are scattered or the island-shaped non-bonded portions of 1 to 10 4 μm 2 are scattered in an island shape. The reason is that the above-mentioned configuration disperses and miniaturizes the stress generated at the joint, and reduces the stress at the end of the joint surface.Therefore, variations in joint strength are small and stress is not concentrated. This is because it is possible to obtain a difficult joint. The brazing material of the present invention is suitable for oxide substrates such as alumina, mullite and cordierite, and non-oxide substrates such as silicon nitride and aluminum nitride.

【0017】本発明のろう材を使用して接合される金属
板としては、銅、ニッケル、鉄あるいはその合金を使用
することが有利である。その理由は、前記金属板の融点
は、前記ろう材の融点より高く、しかもろう材と容易に
合金を形成し易いからである。
It is advantageous to use copper, nickel, iron or an alloy thereof as the metal plate to be joined using the brazing material of the present invention. The reason is that the melting point of the metal plate is higher than the melting point of the brazing filler metal, and moreover, it is easy to form an alloy with the brazing filler metal.

【0018】本発明の金属板接合セラミック基板は、セ
ラミック基板の厚さが、0.1〜5mm、金属板の厚さ
が、0.02〜1mmおよびろう材層の厚さが、0.0
03〜0.03mmであることが有利である。セラミッ
ク基板の厚さが、0.1〜5mmであることが有利ある
理由は、0.1mmより薄いと熱応力等ににより破壊さ
れ易いからであり、一方5mmより厚いとセラミック基
板の厚さが必要以上に厚くなるからである。また、金属
板の厚さが、0.02〜1mmであることが有利である
理由は、0.02mmより薄いと回路としての抵抗値が
高く実用的でないからであり、一方1mmより厚いと加
熱冷却時に多大な応力が発生し、セラミック基板が破壊
され易いからである。
The metal plate-bonded ceramic substrate of the present invention has a ceramic substrate thickness of 0.1 to 5 mm, a metal plate thickness of 0.02 to 1 mm, and a brazing material layer thickness of 0.0.
Advantageously, it is between 03 and 0.03 mm. The reason why the thickness of the ceramic substrate is 0.1 to 5 mm is advantageous because if it is thinner than 0.1 mm, the ceramic substrate is easily broken by thermal stress, and if it is thicker than 5 mm, the thickness of the ceramic substrate is large. This is because it becomes thicker than necessary. Moreover, the reason why the thickness of the metal plate is 0.02 to 1 mm is advantageous because if it is thinner than 0.02 mm, the resistance value as a circuit is high and it is not practical, while if it is thicker than 1 mm, heating is performed. This is because a large amount of stress is generated during cooling and the ceramic substrate is easily broken.

【0019】前記ろう材層の厚さが、0.003〜0.
03mmであることが有利ある理由は、この範囲とする
ことにより、セラミック基板とろう材との好適な接合強
度を得ることができるからである。以下に本発明のろう
材を用いた金属板接合セラミック基板の製造方法を実施
例に基づいて詳細に説明する。
The thickness of the brazing material layer is 0.003 to 0.
The reason why it is advantageous that the thickness is 03 mm is that a preferable bonding strength between the ceramic substrate and the brazing material can be obtained by setting the thickness within this range. Hereinafter, a method of manufacturing a metal plate-bonded ceramic substrate using the brazing material of the present invention will be described in detail based on examples.

【0020】[0020]

【実施例】【Example】

(実施例1)平均粒径が5μmで銀を70.5重量部、
銅を27.5重量部、チタンを2重量部の割合で含有
し、表面に酸化被膜を8重量%の割合で含有するろう材
ペーストを、45mm×45mm×0.635mmの板
状の窒化珪素焼結体よりなる基板の表面にスクリーン印
刷し、10mm×20mmの形状で25μmの膜厚のろ
う材層を形成した後、室温で30分間レベリングし、さ
らに60℃の温度で30分間乾燥した。次いで10mm
×20mm×0.3mmの銅板を前記ろう材層を介して
窒化珪素焼結体よりなる基板に載置して加熱接合した。
加熱接合は、酸素濃度約1ppmの酸化性雰囲気下で5
00℃に加熱し1時間保持した後、さらに3×10-5
orrの減圧下で800℃に加熱し10分間保持するこ
とにより実施した。なお、前記銅板には、接合時に10
0g/cm2 の荷重を加えた。
Example 1 70.5 parts by weight of silver having an average particle size of 5 μm,
A brazing filler metal paste containing copper in an amount of 27.5 parts by weight, titanium in an amount of 2 parts by weight, and an oxide film in an amount of 8% by weight on a surface thereof is formed into a plate-like silicon nitride of 45 mm × 45 mm × 0.635 mm. Screen printing was performed on the surface of a substrate made of a sintered body to form a brazing material layer having a film thickness of 25 μm and a shape of 10 mm × 20 mm, leveling was performed at room temperature for 30 minutes, and further drying was performed at a temperature of 60 ° C. for 30 minutes. Then 10 mm
A × 20 mm × 0.3 mm copper plate was placed on the substrate made of a silicon nitride sintered body through the brazing material layer and heat-bonded.
The heat bonding is performed under an oxidizing atmosphere with an oxygen concentration of about 1 ppm.
After heating to 00 ° C and holding for 1 hour, further 3 × 10 -5 T
It was carried out by heating to 800 ° C. under a reduced pressure of orr and holding for 10 minutes. It should be noted that the copper plate is bonded to the copper plate at 10
A load of 0 g / cm 2 was applied.

【0021】得られた金属板接合セラミック基板の非接
合部比率は、20%で極めて良好な接合状態であった。
The non-bonded portion ratio of the obtained metal plate bonded ceramic substrate was 20%, which was a very good bonded state.

【0022】(実施例2)実施例1と同様であるが、平
均粒径が5μmの酸化物粒子と平均粒径が5μmのろう
材粉末との混合粉末であり、前記酸化物粒子を5重量%
含有するろう材を使用し、金属板接合セラミック基板を
得た。得られた金属板接合セラミック基板の非接合部比
率は、25%で極めて良好な接合状態であった。
(Example 2) The same as Example 1, except that it was a mixed powder of oxide particles having an average particle size of 5 μm and a brazing filler metal powder having an average particle size of 5 μm. %
Using the brazing material contained therein, a metal plate-bonded ceramic substrate was obtained. The non-bonded portion ratio of the obtained metal plate-bonded ceramic substrate was 25%, which was a very good bonded state.

【0023】(実施例3)実施例1と同様であるが、厚
さが20μmの薄板であり、内部に5μmの酸化物粒子
を5重量%含有してなるろう材を使用し、金属板接合セ
ラミック基板を得た。得られた金属板接合セラミック基
板の非接合部比率は、25%で極めて良好な接合状態で
あった。
(Embodiment 3) Similar to Embodiment 1, except that a thin plate having a thickness of 20 μm is used and a brazing material containing 5% by weight of oxide particles having a thickness of 5 μm is used. A ceramic substrate was obtained. The non-bonded portion ratio of the obtained metal plate-bonded ceramic substrate was 25%, which was a very good bonded state.

【0024】実施例1〜3で得られた金属板接合セラミ
ック基板を使用して−65〜150℃までを約30分間
で温度変化させる繰り返し加熱冷却試験を実施したが、
いずれの基板も銅板の剥離や、基板へのクラック等の不
具合は全く認められなかった。
Using the metal plate-bonded ceramic substrates obtained in Examples 1 to 3, repeated heating and cooling tests were conducted in which the temperature was changed from -65 to 150 ° C in about 30 minutes.
No defects such as peeling of the copper plate or cracks in the substrates were observed in any of the substrates.

【0025】[0025]

【発明の効果】本発明のろう材を使用することにより、
熱膨張率が大きく異なる金属板とセラミック基板を接合
しても耐熱衝撃性に優れた信頼性の高い金属板、接合セ
ラミック基板を製造することができる。
By using the brazing material of the present invention,
Even if a metal plate and a ceramic substrate having a large coefficient of thermal expansion are bonded, a highly reliable metal plate and a bonded ceramic substrate having excellent thermal shock resistance can be manufactured.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 酸化物を0.01〜50重量%含有して
なる金属板接合セラミック基板製造用ろう材。
1. A brazing material for producing a metal plate-bonded ceramic substrate, which comprises 0.01 to 50% by weight of an oxide.
【請求項2】 前記ろう材は、平均粒径が0.1〜10
μmの粉末であって、0.01〜2μmの厚さの酸化被
膜を有してなる請求項1記載の金属板接合セラミック基
板製造用ろう材。
2. The brazing material has an average particle size of 0.1 to 10.
The brazing material for producing a metal plate-bonded ceramic substrate according to claim 1, wherein the brazing material is a powder having a thickness of 0.01 μm and has an oxide film with a thickness of 0.01 to 2 μm.
【請求項3】 前記ろう材は、平均粒径が0.1〜8μ
mの酸化物粒子と平均粒径が0.1〜10μmのろう材
粉末との混合粉末である請求項1記載の金属板接合セラ
ミック基板製造用ろう材。
3. The brazing material has an average particle size of 0.1 to 8 μm.
The brazing material for producing a metal plate-bonded ceramic substrate according to claim 1, which is a mixed powder of oxide particles of m and a brazing material powder having an average particle diameter of 0.1 to 10 µm.
【請求項4】 前記ろう材は、厚さが1〜100μmの
薄板であり、粒径が0.1〜100μmの酸化物粒子を
含有してなる請求項1記載の金属板接合セラミック基板
製造用ろう材。
4. The metal plate-bonded ceramic substrate manufacturing method according to claim 1, wherein the brazing filler metal is a thin plate having a thickness of 1 to 100 μm and contains oxide particles having a particle diameter of 0.1 to 100 μm. Brazing material.
【請求項5】 前記ろう材は、銀を主成分とし、チタ
ン、ニオブおよびジルコニアから選択されるいずれか少
なくとも一種の活性金属を0.1〜10重量%含有して
なる請求項1記載の金属板接合セラミック基板製造用ろ
う材。
5. The metal according to claim 1, wherein the brazing material contains silver as a main component and contains 0.1 to 10% by weight of at least one active metal selected from titanium, niobium and zirconia. A brazing material for manufacturing plate-bonded ceramic substrates.
JP15558192A 1992-05-22 1992-05-22 Brazing material for producing ceramic substrate joined to metallic plate Pending JPH05319945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15558192A JPH05319945A (en) 1992-05-22 1992-05-22 Brazing material for producing ceramic substrate joined to metallic plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15558192A JPH05319945A (en) 1992-05-22 1992-05-22 Brazing material for producing ceramic substrate joined to metallic plate

Publications (1)

Publication Number Publication Date
JPH05319945A true JPH05319945A (en) 1993-12-03

Family

ID=15609176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15558192A Pending JPH05319945A (en) 1992-05-22 1992-05-22 Brazing material for producing ceramic substrate joined to metallic plate

Country Status (1)

Country Link
JP (1) JPH05319945A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008181940A (en) * 2007-01-23 2008-08-07 Mitsubishi Materials Corp Production process of substrate for power module and substrate for power module and power module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008181940A (en) * 2007-01-23 2008-08-07 Mitsubishi Materials Corp Production process of substrate for power module and substrate for power module and power module
JP4702294B2 (en) * 2007-01-23 2011-06-15 三菱マテリアル株式会社 Power module substrate manufacturing method, power module substrate, and power module

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