JPH05315406A - Film carrier and its manufacture - Google Patents

Abstract

PURPOSE:To eliminate migration of a metal layer, and finish the working of an insulating film, in a period shorter than the conventional case, by forming an adhesive agent layer, a third insulator layer and a conductor layer in orer on the single surface of a first insulator layer. CONSTITUTION:In the title film carrier, an adhesive agent layer 3, a second insulator layer 2 and a conductor layer 1 are formed on the single surface of a first insulator layer 4. Since a metal layer 1 as a conducting layer is not in contact with the adhesive agent layer 3, migration in the metal layer 1 which migration is to be caused by impurity ions in the adhesive agent layer 3 does not occur. The second insulating layer 2 to be etched is sufficiently thin, By simultaneously applying flash etching to the relatively thick part and the relatively thin part, the thin part is eliminated earlier than the thick part, and consequently patterning is finished. Since a photo-lithography method is not necessary, etching process does not require a long time.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called film carrier used for mounting a semiconductor integrated circuit represented by LSI, VLSI and the like, and more particularly to a manufacturing method thereof.

[0002]

2. Description of the Related Art A conventional film carrier has a device hole 6, a sprocket hole and a support ring 5 formed by mechanical punching on an insulating film (first insulating layer 4 in the present invention) as shown in FIG. Etc., the metal layer 1 is adhered to the insulating film via the adhesive 3, and the lead terminals are formed by performing the photolithography method and the etching method, and as shown in (FIG. 11). Then, the metal layer 1 is provided on the insulating film 4 by the sputtering method and the electroplating method, and the insulating film 4 is subjected to the photolithography method, the etching method, etc.
Providing sprocket holes and support rings 5, etc.,
Further, it was a two-layer film carrier in which lead terminals were formed by performing photolithography and etching on the metal layer 1. Then, a semiconductor element is mounted on these film carriers, the lead terminals and the insulating film are cut, and they are mounted at predetermined positions on the wiring board.

In a three-layer film carrier, such as the one described above, the adhesive 3 because the metal layer 1 is in contact with the adhesive.
There is a problem that the impurity ions therein cause a problem such as migration of the metal layer 1. Further, in the two-layer film carrier, the device hole 6, the sprocket hole, the support ring 5, etc. are provided by performing the photolithography method and the etching method on the insulating film 4 having a high chemical resistance and a thickness of about 50 μm. There was a problem that it took a lot of time.

[0004]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to eliminate the problems such as migration of a metal layer and to process an insulating film more than before. Another object is to provide a film carrier and a manufacturing method thereof in a short time.

[0005]

Means provided by the present invention for solving the above-mentioned problems are as follows: at least in a so-called film carrier in which a wiring pattern made of a conductive material is provided on a film surface, The film carrier is characterized in that an adhesive layer, a second insulator layer and a conductor layer are provided in this order on one surface of the first insulator layer.

Further, preferably, in the film carrier, another conductor layer is provided on a surface of the first insulator layer different from the above.

Also, preferably, in the film carrier, another conductor layer is provided between the first insulator layer and the adhesive layer.

Alternatively, in a so-called film carrier manufacturing method in which a wiring pattern made of a conductive material is provided on a film surface, at least the following steps, ie, (a) a conductive layer is provided on one surface of a thin insulating film. (B) A device hole or a sprocket hole is opened and another insulating film thicker than the thin insulating film is provided with an adhesive layer on one surface, and the adhesive layer is provided on the other surface of the thin insulating film. And (c) the thin insulating film is etched, and (a) to (c) above are provided.

Preferably, in the method for producing a film carrier, the other insulating film shown in (b) above is provided with an adhesive layer on one side and a conductive layer on the other side. The method for producing a film carrier is characterized in that it is adhered to the remaining surface of the thin insulating film via the adhesive layer.

As another preferred embodiment, in the method for producing a film carrier, the other insulating film shown in (b) is provided with a conductive layer and an adhesive layer on one side in this order, The method for producing a film carrier is characterized in that it is adhered to the remaining surface of the thin insulating film via the adhesive layer.

Alternatively, in a so-called film carrier manufacturing method in which a wiring pattern made of a conductive material is provided on the film surface, at least the following steps, that is, (d) a thin insulating layer is provided on one surface of the conductive foil. A step of (e) an insulating film having a device hole or a sprocket hole opened is provided with an adhesive layer on one surface and is adhered to the other surface of the thin insulating layer via the adhesive layer; G) A method of manufacturing a film carrier, characterized by comprising the steps (d) to (g) of etching the thin insulating layer.

Further, preferably, in the method for producing a film carrier, the insulating film shown in (e) above is provided with an adhesive layer on one surface and a conductive layer on the other surface, and the thin insulating film is provided. The method for producing a film carrier is characterized in that the film carrier is adhered to the remaining surface of the layer via the adhesive layer.

Preferably, in the method for producing a film carrier, the insulating film shown in (e) above is provided with a conductive layer and an adhesive layer in this order on one side,
The method for producing a film carrier is characterized in that it is adhered to the remaining surface of the thin insulating layer via the adhesive layer.

Alternatively, in a so-called film carrier manufacturing method in which a wiring pattern made of a conductive material is provided on a film surface, a support ring is formed by applying a lithographic method to manufacture the film carrier. Is the way.

Further, preferably, in the method of manufacturing the film carrier, a photosensitive resin is used as the insulating layer material forming the support ring, in particular, the method of manufacturing the film carrier.

[0016]

As shown in (FIG. 1), according to the film carrier and the manufacturing method thereof according to the present invention, the metal layer 1 as a conductive layer (provided on the surface of the film carrier) is used.
Is not in contact with the adhesive layer 3, there is no problem such as migration of the metal layer 1 generated by impurity ions in the adhesive layer 3. In addition, the second insulating layer 2 to be etched is sufficiently thin, and by performing flash etching simultaneously on the entire relatively thick portion and thin portion, the thin portion is removed first, resulting in Since the patterning is performed and the photolithography method is not necessary, the etching process does not take much time. still,
If we touch on the subject of flash etching, the etching solution acts on the entire surface of the object to be etched at the same time to thinly remove the surface layer. If there is a part, the thin part will be removed first within the same required time, so there is no need for a mask for patterning,
If flash etching is performed in the same manner as the entire surface is etched, desired patterning can be obtained.

[0017]

[Embodiment] <Embodiment 1> (FIG. 5) to (FIG. 9) shows <Embodiment 1> according to the present invention. Cu foil 9 with a thickness of 35 μm
Polyimide resin 10 was coated on one surface of the above to a thickness of 10 μm and cured by heating to form a polyimide resin film (substrate A (FIG. 5)).

On the polyimide film 12 having a thickness of 50 μm,
A 10 μm-thick epoxy adhesive film 11 is laminated, a sprocket hole and a device hole 6 are opened by punching with a mold, and the sprocket hole is used for alignment, and then the substrate is provided with the adhesive film 11. A was adhered (FIG. 8).

Next, the polyimide resin having a thickness of 10 μm exposed from the device hole 6 and the like was flash-etched by using an etching solution containing hydrazine hydrate and caustic potash to expose the Cu surface ( (Figure 9).

Then, a photoresist is coated on the Cu surface, a predetermined pattern is exposed and developed, and Cu is etched using an etching solution composed of ferric chloride solution (liquid temperature 40 ° C., 665 g / l). , A lead terminal portion made of Cu was formed.

Next, the photoresist is removed to remove Cu.
A film carrier was produced by exposing the surface and forming an Sn layer thereon to a thickness of 0.2 to 0.4 μm by an electroless plating method.

Example 2 A Cu layer having a thickness of 1,000 Å was formed on one surface of a polyimide film having a thickness of 10 μm by a sputtering method, and then a Cu layer was made to have a thickness of 1 μm by an electroplating method. Formed (substrate A).

An epoxy adhesive film having a thickness of 10 μm is laminated on a polyimide film having a thickness of 50 μm,
The sprocket hole, the device hole 6 and the like were opened by punching with a die, the sprocket hole was used for alignment, and the substrate A was bonded via an adhesive film.

Next, a photoresist is coated on the Cu surface, a predetermined pattern is exposed and developed, and Cu is provided on the exposed Cu surface by electroplating to a thickness of 34 μm to form an uneven shape corresponding to the lead terminal portion. Formed.

Then, the photoresist film is peeled off, and the 10 μm-thick polyimide film exposed from the device holes 6 and the like is flash-etched by using an etching solution composed of hydrazine hydrate and caustic potash.
The surface was exposed.

Next, the surface of the Cu portion formed by the sputtering method and the electroplating method was coated with an etching solution of ferric chloride solution (liquid temperature 40 ° C., 665 g / l) to a thickness of 2 μm. To a thickness of 0.2 by electroless plating on the Cu surface.
The film carrier was made by forming a Sn layer of ~ 0.4 μm.

Example 3 A Cu layer having a thickness of 1,000 Å was formed on one surface of a polyimide film having a thickness of 10 μm by a sputtering method, and then a Cu layer having a thickness of 1 μm was formed by an electroplating method (substrate C). ).

A Cu layer having a thickness of 1,000 is formed on one surface of a polyimide film having a thickness of 50 μm by a sputtering method.
Then, the Cu layer is formed to a thickness of 1 μm by electroplating, and the thickness is 10 μm on the side opposite to the Cu side.
After the epoxy adhesive film of m is laminated (substrate D), the sprocket hole, the device hole 6 and the through hole are opened by punching with a mold, and the sprocket hole is used for alignment, and the adhesive film is used. Substrate A was adhered. Here, an epoxy adhesive film having a thickness of about 10 μm may be laminated on the Cu layer side.

Next, the polyimide film was flash-etched to a thickness of 10 μm exposed from the device holes 6 and the like using an etching solution containing hydrazine hydrate and caustic potash to expose the Cu surface.

Next, Cu is formed on the entire surface by electroless plating to bring Cu of the substrate C and Cu of the substrate D into conduction,
Photoresist is coated on the Cu surface, exposed and developed, and a thickness of 34 μm of Cu is formed by electroplating. Lead terminals are formed on the substrate C side. Also, Cu in the through hole and on the substrate D side is thickened. went.

Next, the photoresist film was peeled off, and the Cu surface formed by the sputtering method and the electroplating method was made to have a thickness by using an etching solution composed of ferric chloride solution (solution temperature 40 ° C., 665 g / l). A film carrier was prepared by flash etching about 2 μm, and then forming an Sn layer on the Cu surface by electroless plating to a thickness of 0.2 to 0.4 μm.

Example 4 A 30 μm thick Cu foil was coated on one side with a polyimide resin to a thickness of 10 μm and cured by heating (substrate E).

A Cu layer having a thickness of 1,000 is formed on one side of a polyimide film having a thickness of 50 μm by a sputtering method.
Å, and then a Cu layer is formed to a thickness of 1 μm by an electroplating method, and then a thickness of 1 is formed on the side opposite to the Cu layer side.
After laminating a 0 μm epoxy adhesive film (substrate F), punching with a die opens sprocket holes, device holes 6, through holes, etc., and aligns with the sprocket holes. Substrate A was adhered. Here, an epoxy adhesive film having a thickness of about 10 μm may be laminated on the Cu layer side.

Next, the polyimide resin having a thickness of 10 μm exposed from the portion such as the device hole 6 was flash-etched by using an etching solution containing hydrazine hydrate and caustic potash to expose the Cu surface.

Then, Cu is formed on the entire surface by electroless plating to bring Cu of the substrate C and Cu of the substrate D into conduction,
Further, a Cu layer having a thickness of 5 μm is provided by an electroplating method, a Cu surface is coated with a photoresist, and a predetermined pattern is exposed and developed, and a ferric chloride solution (solution temperature 40
C, using an etching solution of 665 g / l)
The u foil was etched to form a lead terminal portion on the substrate E side.

Next, the photoresist is stripped off and Cu
A Sn layer with a thickness of 0.2 ~ is formed on the surface by electroless plating.
A film carrier was prepared by forming it to 0.4 μm.

Example 5 A Cu layer having a thickness of 1,000 Å was formed on one surface of a polyimide film having a thickness of 10 μm by a sputtering method, and then a Cu layer having a thickness of 1 μm was formed by an electroplating method (substrate A). ).

An epoxy adhesive film having a thickness of 10 μm is laminated on a polyimide film having a thickness of 50 μm,
The sprocket hole, the device hole 6 and the like were opened by punching with a die, the sprocket hole was used for alignment, and the substrate A was bonded via an adhesive film.

Then, a photoresist is coated on the Cu surface and the device hole, and a predetermined pattern is exposed and exposed.
Development was performed, a resist pattern of a support ring was formed in the device hole 6, and a lead terminal portion was formed on the Cu side by electroplating.

Then, a 10 μm-thick polyimide film exposed from the device holes and the like was flash-etched by using an etching solution containing hydrazine hydrate and caustic potash to form a support ring.

Next, ferric chloride solution (liquid temperature 40 ° C., 665
The thickness of the surface of the Cu layer formed by the sputtering method and the electroplating method is about 2 μm by flash etching using an etching solution of g / l), and then the Sn layer is formed on the Cu surface by the electroless plating method. 0.
A film carrier was prepared by forming the film carrier to have a thickness of 2 to 0.4 μm.

Regarding the support ring, the polyimide film exposed from the device hole 6 or the like may be entirely flash-etched, and then the support ring may be formed by a screen printing method or the like.

[0043]

As described above, according to the film carrier and the method for producing the same according to the present invention, since the metal layer is not in contact with the adhesive layer, the migration of the metal layer caused by the impurity ions in the adhesive agent occurs. There is no problem such as, and the insulating film to be etched is sufficiently thin,
Moreover, since the photolithography method is not required, the etching process does not take much time. Further, the sprocket hole is mainly formed by mechanical punching, so that the accuracy is good.

[0044]

[Brief description of the figure]

FIG. 1 is an explanatory view showing an embodiment of a film carrier according to the present invention by using a sectional view of the film carrier.

FIG. 2 shows an example of a film carrier according to the present invention,
It is explanatory drawing which shows an example of a prior art using the top view of a film carrier.

FIG. 3 is an explanatory view showing an example in which the support ring of the film carrier according to the present invention is made of only an insulating layer, using a sectional view of the film carrier.

FIG. 4 is an explanatory view showing an embodiment in which a through hole of the film carrier according to the present invention is provided, using a cross-sectional view of the film carrier.

FIG. 5 is an explanatory view showing, using a cross-sectional view, a step of coating a Cu foil with a polyimide resin in an example of a method for producing a film carrier according to the present invention.

FIG. 6 is an explanatory view showing a step of laminating an adhesive film on a polyimide film of an embodiment of the method for producing a film carrier according to the present invention, using a sectional view.

FIG. 7 shows a process of opening a sprocket hole, a device hole and the like by punching with a die in one embodiment of a method for manufacturing a film carrier according to the present invention,
It is explanatory drawing shown using a cross-sectional view.

8 is a cross-sectional view showing a step of adhering the intermediate bodies shown in FIG. 5 and FIG. 7 to each other in one embodiment of the method for producing a film carrier according to the present invention. It is a figure.

FIG. 9 is an explanatory view showing, using a cross-sectional view, a step of flash etching a polyimide resin in an example of a method for manufacturing a film carrier according to the present invention.

FIG. 10 is an explanatory view showing an example of a film carrier according to a conventional technique using a sectional view. (Trilayer film carrier)

FIG. 11 is an explanatory view showing another example of the film carrier according to the related art, using a sectional view. (Double layer film carrier)

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Metal layer 2 ... 2nd insulator layer 3 ... Adhesive layer 4 ... 1st insulator layer 5 ... Support ring 6 ... Device hole 7 ... Metal Layer 8 ... Through hole 9 ... Cu foil 10 ... Polyimide resin 11 ... Adhesive film 12 ... Polyimide film

Claims (11)

[Claims] 1. In a so-called film carrier in which a wiring pattern made of a conductive material is provided on a film surface, an adhesive layer, a second insulating layer and a conductive material are provided on at least one surface of the first insulating layer. A film carrier, characterized in that the body layers are provided in this order. 2. The film carrier according to claim 1, wherein in the film carrier, another conductor layer is provided on a surface of the first insulator layer different from the surface. 3. The film carrier according to claim 1, wherein another conductor layer is provided between the first insulating layer and the adhesive layer in the film carrier. 4. A method for producing a so-called film carrier in which a wiring pattern made of a conductive material is provided on a film surface, at least the following steps, namely, (a) a conductive layer is provided on one surface of a thin insulating film. (B) A device hole or a sprocket hole is opened and another insulating film thicker than the thin insulating film is provided with an adhesive layer on one side, and the adhesive layer is provided on the other side of the thin insulating film. A step of adhering the thin insulating film by means of (c), a step of etching the thin insulating film, and (a) to (c) above. 5. The thin insulating film according to the method for producing a film carrier, wherein another insulating film shown in (b) is provided with an adhesive layer on one side and a conductive layer on the other side. The method for producing a film carrier according to claim 4, wherein the film carrier is adhered to the remaining surface of the film via the adhesive layer. 6. In the method for producing a film carrier, the other insulating film shown in (b) is provided with a conductive layer and an adhesive layer on one surface in this order, and on the other surface of the thin insulating film. The method for producing a film carrier according to claim 4, wherein the film carrier is adhered via the adhesive layer. 7. A method for producing a so-called film carrier in which a wiring pattern made of a conductive material is provided on a film surface, in at least the following steps: (d) A thin insulating layer is provided on one surface of the conductive foil. (E) Insulating film with device hole or sprocket hole opened, adhesive layer provided on one side,
A step of adhering to the other surface of the thin insulating layer via the adhesive layer; (g) a step of etching the thin insulating layer; and (d) to (g) above. Of manufacturing film carrier. 8. The method for producing a film carrier as described above, wherein the insulating film shown in (e) above is provided with an adhesive layer on one side and a conductive layer on the other side, and the rest of the thin insulating layer is left. The method for manufacturing a film carrier according to claim 7, wherein the film carrier is adhered to the surface of the film via the adhesive layer. 9. In the method for producing a film carrier, the insulating film shown in (e) above is provided with a conductive layer and an adhesive layer on one surface in this order, and the adhesive film is formed on the remaining surface of the thin insulating layer. The method for producing a film carrier according to claim 7, wherein the film carrier is adhered via an agent layer. 10. A method for manufacturing a so-called film carrier in which a wiring pattern made of a conductive material is provided on a film surface, wherein a support ring is formed by subjecting an insulating layer to a lithographic method. Carrier manufacturing method. 11. The method of manufacturing a film carrier according to claim 10, wherein in the method of manufacturing the film carrier, a photosensitive resin is used as an insulating layer material forming a support ring.