JPH05315313A - Leaf-type ultrasonic processing equipment - Google Patents

Leaf-type ultrasonic processing equipment

Info

Publication number
JPH05315313A
JPH05315313A JP11385892A JP11385892A JPH05315313A JP H05315313 A JPH05315313 A JP H05315313A JP 11385892 A JP11385892 A JP 11385892A JP 11385892 A JP11385892 A JP 11385892A JP H05315313 A JPH05315313 A JP H05315313A
Authority
JP
Japan
Prior art keywords
liquid
processing
processed
treatment
ultrasonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11385892A
Other languages
Japanese (ja)
Inventor
Niwaji Majima
庭司 間島
Kazuhiro Watanabe
和廣 渡辺
Mineo Watashiro
峰雄 渡代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11385892A priority Critical patent/JPH05315313A/en
Publication of JPH05315313A publication Critical patent/JPH05315313A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To conduct the most efficient processing by placing an object to be processed on loops of standing wave generated in processing liquid. CONSTITUTION:A leaf-type ultrasonic processing equipment 10 consists of a processing bath 1 and a liquid surface raising means 2. Processing liquid 3 is made to flow abundantly by being partitioned by bulkheads 1a which are provided in front and at back of the processing bath 1. An ultrasonic transmitter 6 is provided on the bottom of the processing bath 1. Ultrasonic processing can be conducted at the optimum efficiency, if rising up of movable bulkheads 7 is controlled in such way that the height of liquid surface of the processing liquid 3 which has been raised up from an object to be processed has relation with wavelength L of standing wave generated in the processing liquid 3, as the formula of H=L/2 indicates. As a result, processing time can be shortened by obtaining the most efficient processing effects.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は枚葉式超音波処理装置に
係わり、超音波処理装置に処理液の液面嵩上げ手段を設
け、超音波処理に際して最も効率のよい処理ができる枚
葉式超音波処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer ultrasonic processing apparatus, and more particularly to a single-wafer ultrasonic processing apparatus which is provided with means for raising the level of a processing liquid in the ultrasonic processing apparatus and which can perform the most efficient ultrasonic processing. ..

【0002】近年、半導体装置の高密度・高集積化を実
現するために、半導体素子の製造プロセスにおいては、
大きなウェーハに超微細なパターニングが行われ、パタ
ーンルールはサブミクロンの領域に入ってきている。ま
た、液晶表示装置などのフラットディスプレイにおいて
も、大表示容量と大画面を実現するために、表面素子の
製造プロセスにおいては、大きな基板に微細なパターニ
ングを行う方向に進展している。
In recent years, in order to realize high density and high integration of semiconductor devices, in the manufacturing process of semiconductor elements,
Ultra-fine patterning has been performed on large wafers, and the pattern rule is entering the submicron range. Further, in flat displays such as liquid crystal display devices as well, in order to realize a large display capacity and a large screen, in the manufacturing process of surface elements, there is progressing toward fine patterning on a large substrate.

【0003】こうしたいろいろな電子装置の素子の製造
プロセスにおいて行われている基板の表面処理は、表面
のエッチング、レジストなどの表面塗膜の剥離、表面に
付着した汚染物質の除去、処理薬液を最終的に基板から
除去するための有機溶剤や水による置換、基板表面の清
浄などで、どの処理も重要な工程となっている。しか
も、これらの工程は、複数の工程を連続して行うことが
多い。
The surface treatment of the substrate, which is carried out in the process of manufacturing the elements of various electronic devices, includes the etching of the surface, the peeling of the surface coating film such as resist, the removal of contaminants adhering to the surface, and the final treatment chemical solution. Every process is an important step, such as replacement with an organic solvent or water to remove it from the substrate, cleaning the substrate surface, and so on. Moreover, in many of these steps, a plurality of steps are continuously performed.

【0004】ところで、こうしたいろいろな表面処理に
おいては、処理液を超音波で振って効率よく処理するこ
とがよく行われていが、処理する基板を一枚ずつ枚葉式
に移動させながら連続的に処理する装置においては、超
音波処理を如何に効率よく行うかが課題の一つになって
いる。
By the way, in such various surface treatments, it is often practiced that the treatment liquid is shaken by ultrasonic waves for efficient treatment. However, the substrates to be treated are continuously moved while being moved one by one. In a processing apparatus, one of the issues is how efficiently ultrasonic processing is performed.

【0005】[0005]

【従来の技術】図4は従来の枚葉式超音波処理装置の説
明図で、図4(A)は模式的な側面図、図4(B)は超
音波処理の処理効果の説明図である。図において、1は
処理槽、1aは隔壁、1bは溢流面、3は処理液、3aは液
面、3bは流入口、3cは流出口、4はころコンベア、5は
被処理物、9aは搬入口、9bは搬出口、10は枚葉式超音波
処理装置である。
2. Description of the Related Art FIG. 4 is an explanatory view of a conventional single-wafer ultrasonic processing apparatus, FIG. 4 (A) is a schematic side view, and FIG. 4 (B) is an explanatory drawing of processing effects of ultrasonic processing. In the figure, 1 is a processing tank, 1a is a partition wall, 1b is an overflow surface, 3 is a processing liquid, 3a is a liquid surface, 3b is an inlet, 3c is an outlet, 4 is a roller conveyor, 5 is an object to be treated, 9a. Is a carry-in port, 9b is a carry-out port, and 10 is a single-wafer ultrasonic processing device.

【0006】図4(A)において、従来の枚葉式超音波
処理装置10は、処理槽1の底部に開口した流入口3bから
処理液3が送り込まれ、その処理液3が処理槽1を仕切
った隔壁1aの溢流面1bから溢れ出て液面3aを一定に保つ
ようになっている。そして、溢流した処理液3は流出口
3cから吐き出されるようになっている。
In FIG. 4 (A), in the conventional single-wafer processing apparatus 10, the processing liquid 3 is fed from an inflow port 3b opened at the bottom of the processing tank 1, and the processing liquid 3 partitions the processing tank 1. The overflow surface 1b of the partition wall 1a overflows to keep the liquid surface 3a constant. And the overflowed processing liquid 3 is the outlet.
It is supposed to be exhaled from 3c.

【0007】処理液3は、被処理物5の処理工程によっ
ていろいろな薬液が用いられ、例えば、被処理物5を構
成する基板を洗浄する水や洗浄液、レジストの現像液や
剥離液、基板に被着されているいろいろな膜のエッチン
グ液などである。
Various chemicals are used as the treatment liquid 3 depending on the treatment process of the object 5 to be treated. For example, water or a washing liquid for washing the substrate constituting the object 5 to be treated, a developing solution or a stripping solution for the resist, or a substrate. It is an etchant for various films that have been deposited.

【0008】ところで、被処理物5は、水平に並設され
て回動駆動されるころコンベア4に乗せられて搬送され
る。そのため、処理槽1には被処理物5が衝き当たらな
いように開口した搬入口9aと搬出口9bが設けられてお
り、処理液3の液面3aを一定に保つ隔壁1aの溢流面1bも
搬送される被処理物5が衝き当たらない程度の高さに構
成されている。
The object 5 to be processed is carried on a roller conveyor 4 which is horizontally arranged and driven to rotate. Therefore, the processing tank 1 is provided with a carry-in port 9a and a carry-out port 9b which are opened so as not to hit the object 5 to be processed, and the overflow surface 1b of the partition wall 1a for keeping the liquid level 3a of the processing liquid 3 constant. Also, the height of the workpiece 5 to be conveyed is set so as not to hit it.

【0009】超音波発振器6は、処理槽1の底部に配設
されている。そして、被処理物5がころコンベア4に乗
って処理槽1の中央部に搬入されて停止すると、流入口
3bから送り込まれた処理液3が隔壁1aの溢流面1bから溢
れ流れて液面3aが一定に保たれる。そして、処理液3が
超音波発振器6によって下方から揺さぶられ、被処理物
5が所定の時間超音波処理されるようになっている。
The ultrasonic oscillator 6 is arranged at the bottom of the processing tank 1. Then, when the object to be processed 5 rides on the roller conveyor 4 and is carried into the central portion of the processing tank 1 and stopped, the inlet port
The processing liquid 3 fed from 3b overflows from the overflow surface 1b of the partition wall 1a to keep the liquid surface 3a constant. Then, the processing liquid 3 is shaken from below by the ultrasonic oscillator 6, and the object 5 is ultrasonically processed for a predetermined time.

【0010】超音波処理が終われば、被処理物5はころ
コンベア4に乗って搬出口9bから運び出され、次の被処
理物5が搬入口9aから運び込まれて処理槽1の中央部で
停止し、超音波処理が順次繰り返される。
When the ultrasonic treatment is finished, the object 5 to be processed is carried on the roller conveyor 4 and carried out from the carry-out port 9b, and the next object 5 to be processed is carried in from the carry-in port 9a and stopped at the central portion of the processing tank 1. Then, the ultrasonic treatment is sequentially repeated.

【0011】このように、被処理物5を一枚ずつ搬入し
ては超音波処理して搬出する枚葉式の枚葉式超音波処理
装置10においては、液面3aを保つ隔壁1aが搬送される被
処理物5が衝き当たらない高さに構成されている。その
ために、超音波処理を行う際に、溢流面1bから処理液3
を溢流させると、液面3aの高さが被処理物5の表面から
数mmの僅かな高さしか嵩上げされない。つまり、被処
理物5は処理液3の中に没せず、液面3aに殆ど浮いた状
態で処理が行われる。
In this way, in the single-wafer type single-wafer ultrasonic processing apparatus 10 in which the objects 5 to be processed are carried in one by one, ultrasonically processed and carried out, the partition wall 1a for keeping the liquid surface 3a is carried. The height of the object to be processed 5 is set so as not to hit it. Therefore, when performing ultrasonic treatment, the treatment liquid 3 is discharged from the overflow surface 1b.
When the liquid is overflowed, the height of the liquid surface 3a is raised from the surface of the object to be treated 5 by only a few mm. That is, the object to be processed 5 is not submerged in the processing liquid 3, and the processing is performed in a state where it is almost floating on the liquid surface 3a.

【0012】一方、図4(B)において、超音波発振器
によって発生した処理液3の中の定在波6aは、例えば、
超音波の周波数:25kHzで、液中音速:1,500 m/s
とすると、定在波6aの振幅が最小(=0)の節から節ま
での波長Lは、L=30mmとなる。そこで液面3aからみ
て、処理液3が最も大きく振動し、従って処理効率が最
大となる定在波6aの腹の位置は、液面3aからL/2=15
mmである。
On the other hand, in FIG. 4B, the standing wave 6a in the processing liquid 3 generated by the ultrasonic oscillator is, for example,
Ultrasonic frequency: 25 kHz, sound velocity in liquid: 1,500 m / s
Then, the wavelength L from the node where the amplitude of the standing wave 6a is the minimum (= 0) is L = 30 mm. Therefore, when viewed from the liquid level 3a, the position of the antinode of the standing wave 6a at which the processing liquid 3 vibrates most and thus the processing efficiency is maximum is L / 2 = 15 from the liquid level 3a.
mm.

【0013】[0013]

【発明が解決しようとする課題】ところが、従来の枚葉
式超音波処理装置10においては、処理槽1に被処理物5
を搬入したり搬出したりするために、処理液3が溢れる
隔壁1aの溢流面1bを被処理物5の搬送経路よりも高くす
ることができない。つまり、被処理物5に対する処理液
3の液面3aを、超音波処理に際して定在波6aの腹が位置
する高さ、つまりこの例でいえば被処理物5を処理液3
の液面3aから15mmの深さに位置させることができなか
った。そのために、効率の最適な超音波処理ができなか
った。
However, in the conventional single-wafer type ultrasonic processing apparatus 10, the object to be processed 5 is placed in the processing tank 1.
Therefore, the overflow surface 1b of the partition wall 1a where the processing liquid 3 overflows cannot be higher than the transport path of the object 5 to be processed. That is, the liquid surface 3a of the processing liquid 3 with respect to the processing object 5 is at a height at which the antinode of the standing wave 6a is located during the ultrasonic processing, that is, in the present example, the processing object 3 is treated with the processing liquid 3a.
It was not possible to position it at a depth of 15 mm from the liquid surface 3a. Therefore, ultrasonic treatment with optimum efficiency could not be performed.

【0014】そこで本発明においては、超音波処理装置
に処理液の液面嵩上げ手段を設け、超音波処理に際して
最も効率のよい処理ができる枚葉式超音波処理装置を提
供することを目的としている。
Therefore, it is an object of the present invention to provide a single-wafer type ultrasonic processing apparatus which is provided with a means for raising the level of a processing liquid in the ultrasonic processing apparatus and which can perform the most efficient ultrasonic processing.

【0015】[0015]

【課題を解決するための手段】上で述べた課題は、処理
槽と、液面嵩上げ手段を有し、前記処理槽は、隔壁で仕
切られた処理液を溢流しながら、並設されたころコンベ
アによって枚葉式に搬入・搬出される被処理物を、底部
に配設された超音波発振器によって超音波処理するもの
であり、前記液面嵩上げ手段は、前記被処理物が超音波
処理される際に、前記処理液の液面から該被処理物まで
の深さを、前記超音波発振器によって該処理液の中に発
生した定在波の波長Lの1/2に相当する距離にするも
のであるように構成された枚葉式超音波処理装置によっ
て解決される。
[Means for Solving the Problems] The above-mentioned problem has a treatment tank and a liquid level raising means, and the treatment tanks are arranged in parallel while overflowing the treatment liquid partitioned by partition walls. An object to be processed that is carried in and out in a single-wafer manner by a conveyor is ultrasonically processed by an ultrasonic oscillator disposed at the bottom, and the liquid level raising means is an ultrasonically processed object. In doing so, the depth from the liquid surface of the treatment liquid to the object to be treated is set to a distance corresponding to 1/2 of the wavelength L of the standing wave generated in the treatment liquid by the ultrasonic oscillator. It is solved by a single-wafer sonicator configured to be one.

【0016】[0016]

【作用】本発明においては、被処理物を枚葉式に搬送し
ながら超音波処理をする際に、被処理物を最も効率よく
超音波処理される位置に配置するようにしている。
In the present invention, when the ultrasonic treatment is carried out while the object to be treated is conveyed in a single-wafer manner, the object to be treated is arranged at the position where the ultrasonic treatment is most efficiently performed.

【0017】すなわち、処理液は発生した定在波の振幅
が最大の腹の部分で最も大きく揺さぶられ、その腹の位
置は処理液の液面からの深さが定在波の波長Lの1/2
になっている。従って、この位置に被処理物を位置させ
るようにしている。
That is, the treatment liquid is shaken most at the antinode where the amplitude of the generated standing wave is maximum, and the depth of the antinode is 1 from the liquid surface of the treatment liquid at the wavelength L of the standing wave. / 2
It has become. Therefore, the object to be processed is positioned at this position.

【0018】そのために、被処理物を搬送する際には、
搬送を妨げないように液面の上を移動させ、超音波処理
を行う際には、被処理物に対して相対的に処理液の液面
を液面嵩上げ手段によって嵩上げするようにしている。
Therefore, when the object to be processed is transported,
When the ultrasonic treatment is performed by moving the liquid surface so as not to hinder the conveyance, the liquid surface raising means relatively raises the liquid surface of the treatment liquid relative to the object to be treated.

【0019】こうすると、被処理物が最も効率よく超音
波処理されるので、特に複数の処理槽を連設して一連の
処理プロセスを連続して行う場合には、プロセスの効率
をより上げることができる。
In this way, the object to be treated is ultrasonically treated most efficiently, so that the efficiency of the process should be further improved, especially when a plurality of treatment tanks are connected in series and a series of treatment processes are carried out continuously. You can

【0020】[0020]

【実施例】図1は本発明の一実施例の説明図、図2は図
1の要部の拡大断面図で、図2(A)は被処理物の搬送
時、図2(B)は被処理物の超音波処理時、図3は本発
明の他の実施例の説明図で、図3(A)は要部の斜視
図、図3(B)は被処理物の超音波処理時である。図に
おいて 1は処理槽、1aは隔壁、1bは溢流面、2は液面
嵩上げ手段、3は処理液、3aは液面、4はころコンベ
ア、5は被処理物、6は超音波発振器、6aは定在波、7
は可動隔壁、7aは溢流孔、7bはラック、7cはピニオン、
8は可動ころコンベア、8aはシリンダ、8bは駆動歯車、
10は枚葉式超音波処理装置である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an explanatory view of an embodiment of the present invention, FIG. 2 is an enlarged cross-sectional view of an essential part of FIG. 1, FIG. 3 is an explanatory view of another embodiment of the present invention during ultrasonic processing of the object to be processed, FIG. 3 (A) is a perspective view of a main part, and FIG. 3 (B) is during ultrasonic processing of the object. Is. In the figure, 1 is a processing tank, 1a is a partition wall, 1b is an overflow surface, 2 is a liquid level raising means, 3 is a processing liquid, 3a is a liquid level, 4 is a roller conveyor, 5 is an object to be processed, 6 is an ultrasonic oscillator. , 6a is a standing wave, 7
Is a movable partition wall, 7a is an overflow hole, 7b is a rack, 7c is a pinion,
8 is a movable roller conveyor, 8a is a cylinder, 8b is a drive gear,
Reference numeral 10 is a single-wafer ultrasonic processing device.

【0021】実施例:1 図1〜図2において、枚葉式超音波処理装置10は、処理
槽1と液面嵩上げ手段2とで構成されており、処理液3
は隔壁1aの前後に設けられた隔壁1aに仕切られて溢流す
るようになっている。また、処理槽1の底部には超音波
発振器6が配設されている。
Embodiment 1: In FIGS. 1 and 2, a single-wafer ultrasonic treatment apparatus 10 comprises a treatment tank 1 and a liquid level raising means 2, and a treatment liquid 3
Is partitioned by the partition walls 1a provided before and after the partition wall 1a to overflow. An ultrasonic oscillator 6 is arranged at the bottom of the processing tank 1.

【0022】一方、液面嵩上げ手段2は、処理槽1の前
後に設けられた隔壁1aのそれぞれに近接して設けられた
可動隔壁7から構成されている。この可動隔壁7は、中
間部に横長の溢流孔7aが設けられている。また、左右の
両端部にはラック7bが突設されており、このラック7bに
噛合して回転駆動されるピニオン7cがよって上下動する
ようになっている。
On the other hand, the liquid level raising means 2 is composed of movable partition walls 7 provided in proximity to the partition walls 1a provided at the front and rear of the processing tank 1, respectively. The movable partition 7 is provided with a horizontally long overflow hole 7a in the middle thereof. Further, racks 7b are projectingly provided at both left and right ends, and a pinion 7c which is meshed with the racks 7b and driven to rotate is vertically moved.

【0023】ころコンベア4に乗った被処理物5が処理
槽1に搬入されたり、処理槽1から搬出されたりする場
合には、図2(A)に示したように可動隔壁7が下降し
た状態になっている。この際には、被処理物5が溢流孔
7aを自在に通過できるようになっている。
When the object 5 to be processed on the roller conveyor 4 is carried into or out of the processing tank 1, the movable partition wall 7 is lowered as shown in FIG. 2 (A). It is in a state. At this time, the object to be treated 5 is overflow hole.
It can pass 7a freely.

【0024】それに対して、被処理物5を超音波処理す
る場合には、被処理物5が処理槽1の中央部に停止しか
ら可動隔壁7を上昇させる。そうすると、図2(B)に
示したように可動隔壁7の溢流孔7aが持ち上がる。従っ
て、処理液3の溢流する位置が高くなり、処理液3の液
面3aが嵩上げされる。
On the other hand, when the object 5 to be processed is subjected to ultrasonic treatment, the movable partition 7 is raised after the object 5 is stopped at the center of the processing tank 1. Then, as shown in FIG. 2B, the overflow hole 7a of the movable partition 7 is lifted. Therefore, the position where the processing liquid 3 overflows is increased, and the liquid surface 3a of the processing liquid 3 is raised.

【0025】被処理物5から嵩上げされた処理液3の液
面3aの高さHが、処理液3の中で発生する定在波の波長
Lに対して、H≒L/2なる関係になるように可動隔壁
7の上昇を制御すれば、超音波処理を最適な効率で行う
ことができる。
The height H of the liquid surface 3a of the processing liquid 3 raised from the object to be processed 5 has a relationship of H≈L / 2 with respect to the wavelength L of the standing wave generated in the processing liquid 3. If the rise of the movable partition 7 is controlled so as to achieve the above, the ultrasonic treatment can be performed with optimum efficiency.

【0026】実施例:2 図3において、処理槽1の中に設けられた可動ころコン
ベア8が液面嵩上げ手段2となっている。すなわち、処
理槽1の中に配設されている複数本のころコンベアを連
設して一体となし、例えば、シリンダ8aによって上下動
できるようになっている。
Embodiment 2 In FIG. 3, the movable roller conveyor 8 provided in the processing tank 1 serves as the liquid level raising means 2. That is, a plurality of roller conveyors arranged in the processing tank 1 are continuously arranged to be integrated, and can be moved up and down by a cylinder 8a, for example.

【0027】いま、可動ころコンベア8が上昇した際に
は、例えば、駆動歯車8bに噛合して可動ころコンベア8
全体が回動し、ころコンベア4と水平に並んで被処理物
5を搬入したり搬出したりするようになっている。
When the movable roller conveyor 8 moves up, for example, the movable roller conveyor 8 meshes with the drive gear 8b.
The whole is rotated so that the object to be processed 5 can be carried in and out in parallel with the roller conveyor 4.

【0028】それに対して、被処理物5を超音波処理す
る際には、可動ころコンベア8が下降して処理液3の中
に没する。そして、可動ころコンベア8の下降の程度、
つまり被処理物5の処理液3に没する深さを制御すれ
ば、図3(B)に示したように被処理物5から嵩上げさ
れた処理液3の液面3aの高さHを、処理液3の中で発生
する定在波の波長Lに対して、H≒L/2になるように
できる。従って、超音波処理を最も効率よく行うことが
できる。
On the other hand, when the object 5 to be processed is ultrasonically processed, the movable roller conveyor 8 descends and is immersed in the processing liquid 3. And, the degree of lowering of the movable roller conveyor 8,
That is, if the depth of the processing object 5 submerged in the processing solution 3 is controlled, the height H of the liquid surface 3a of the processing solution 3 raised from the processing object 5 as shown in FIG. It is possible to set H≈L / 2 for the wavelength L of the standing wave generated in the treatment liquid 3. Therefore, the ultrasonic treatment can be performed most efficiently.

【0029】こうして、被処理物5を超音波処理する際
には、超音波発振器6で発生した定在波6aの腹が被処理
物5の位置に対応するようにして、最も効率のよい超音
波処理を行うことができる。
Thus, when ultrasonically treating the object 5 to be processed, the antinode of the standing wave 6a generated by the ultrasonic oscillator 6 corresponds to the position of the object 5 to be processed. Sonication can be performed.

【0030】液面嵩上げ手段にはいろいろな手段が採れ
るが、本発明によれば、処理液が溢流する高さを制御し
ても、被処理物が処理液中に没する深さを制御しても全
く同一の効果を得ることができる。そしてこうした手段
は、こゝで例示した以外に種々の変形が可能である。
Although various means can be adopted as the liquid level raising means, according to the present invention, even if the height at which the processing liquid overflows is controlled, the depth at which the object to be processed is submerged in the processing liquid is controlled. However, the same effect can be obtained. Further, such means can be modified in various ways other than those exemplified here.

【0031】[0031]

【発明の効果】本発明によれば、枚葉式の超音波処理を
するに際して、処理液の中で発生した定在波の腹に被処
理物が位置するようにして、最も効率のよい処理効果を
得て処理時間の短縮も行うことができる。
According to the present invention, when performing a single-wafer ultrasonic treatment, the object to be treated is positioned at the antinode of the standing wave generated in the treatment liquid, and the most efficient treatment is achieved. The effect can be obtained and the processing time can be shortened.

【0032】その結果、例えば、フラットディスプレイ
の製造プロセスにおいて、ガラス基板の処理を超音波処
理を適宜介在させて一連のプロセスを連続式に行う場合
などに、プロセスの効率を上げることができる。
As a result, for example, in a flat display manufacturing process, the process efficiency can be improved in the case where a series of processes are continuously performed by appropriately interposing ultrasonic treatment for the glass substrate.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の一実施例の説明図である。FIG. 1 is an explanatory diagram of an embodiment of the present invention.

【図2】 図1の要部の拡大断面図で、(A)は被処理
物の搬送時、(B)は被処理物の超音波処理時である。
2A and 2B are enlarged cross-sectional views of the main part of FIG. 1, in which FIG. 2A is the time when the object to be processed is conveyed, and FIG.

【図3】 本発明の他の実施例の説明図で、(A)は要
部の斜視図、(B)は被処理物の超音波処理時である。
3A and 3B are explanatory views of another embodiment of the present invention, in which FIG. 3A is a perspective view of a main part, and FIG.

【図4】 従来の枚葉式超音波処理装置の説明図で、
(A)は模式的な側面図、(B)は超音波処理の処理効
果の説明図である。
FIG. 4 is an explanatory view of a conventional single-wafer ultrasonic processing device,
(A) is a schematic side view, (B) is an explanatory view of the processing effect of ultrasonic processing.

【符号の説明】[Explanation of symbols]

1 処理槽 1a 隔壁 1b
溢流面 2 液面嵩上げ手段 3 処理液 3a 液面 4 ころコンベア 5 被処理物 6 超音波発振器 6a 定在波 7 可動隔壁 7a 溢流孔 7b
ラック 7c ピニオン 8 可動ころコンベア 8a シリンダ 8b
駆動歯車 10 枚葉式超音波処理装置
1 Processing tank 1a Partition wall 1b
Overflow surface 2 Liquid level raising means 3 Treatment liquid 3a Liquid surface 4 Roller conveyor 5 Object to be treated 6 Ultrasonic oscillator 6a Standing wave 7 Movable partition 7a Overflow hole 7b
Rack 7c Pinion 8 Movable roller conveyor 8a Cylinder 8b
Drive gear 10-sheet type ultrasonic processing device

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 処理槽(1) と、液面嵩上げ手段(2) を有
し、 前記処理槽(1) は、隔壁(1a)で仕切られた処理液(3) を
溢流しながら、並設されたころコンベア(4) によって枚
葉式に搬入・搬出される被処理物(5) を、底部に配設さ
れた超音波発振器(6) によって超音波処理するものであ
り、 前記液面嵩上げ手段(2) は、前記被処理物(5) が超音波
処理される際に、前記処理液(3) の液面(3a)から該被処
理物(5) までの深さを、前記超音波発振器(6)によって
該処理液(3) の中に発生した定在波(6a)の波長Lの1/
2に相当する距離にするものであることを特徴とする枚
葉式超音波処理装置。
1. A treatment tank (1) and a liquid level raising means (2) are provided, and the treatment tank (1) is arranged in parallel while overflowing the treatment liquid (3) partitioned by a partition wall (1a). The object to be processed (5), which is carried in and out in a single-wafer manner by the roller conveyor (4) provided, is ultrasonically processed by an ultrasonic oscillator (6) arranged at the bottom, The raising means (2), when the object to be treated (5) is subjected to ultrasonic treatment, the depth from the liquid surface (3a) of the treatment liquid (3) to the object to be treated (5) is 1 / wavelength L of the standing wave (6a) generated in the treatment liquid (3) by the ultrasonic oscillator (6)
A single-wafer ultrasonic processing device, characterized in that the distance is equivalent to 2.
【請求項2】 前記液面嵩上げ手段(2) は、前記処理槽
(1) の隔壁(1a)に近接して上下動可能に設けられ、かつ
中間部に溢流孔(7a)を具えた可動隔壁(7) を有するもの
であり、 前記可動隔壁(7) は、前記被処理物(5) が搬入・搬出さ
れる際には、該被処理物(5) が溢流孔(7a)を通過自在に
下降し、該被処理物(5) が超音波処理される際には、該
溢流孔(7a)が前記処理液(3) の液面(3a)を嵩上げさせる
ように上昇するものである請求項1記載の枚葉式超音波
処理装置。
2. The liquid level raising means (2) is the processing tank.
The movable partition wall (7) is provided so as to be vertically movable close to the partition wall (1a) of (1), and has a movable partition wall (7) having an overflow hole (7a) at an intermediate portion thereof. When the object to be processed (5) is carried in and out, the object to be processed (5) descends freely through the overflow hole (7a), and the object to be processed (5) is subjected to ultrasonic treatment. The single-wafer ultrasonic processing apparatus according to claim 1, wherein the overflow hole (7a) rises so as to raise the liquid level (3a) of the treatment liquid (3) when the treatment is performed.
【請求項3】 前記液面嵩上げ手段(2) は、前記被処理
物(5) が乗って搬送され、かつ前記処理槽(1) の中に上
下動可能に設けられた可動ころコンベア(8)を有するも
のであり、 前記可動ころコンベア(8) は、前記被処理物(5) が搬入
・搬出される際には、該被処理物(5) が乗れるように前
記ころコンベア(4) と面一に上昇し、該被処理物(5) が
超音波処理される際には、前記処理液(3) の液面(3a)を
嵩上げさせるように下降するものである請求項1記載の
枚葉式超音波処理装置。
3. The liquid level raising means (2) is a movable roller conveyor (8) which is carried by the object (5) to be processed and is vertically movable in the processing tank (1). ), The movable roller conveyor (8), when the object to be processed (5) is carried in and out, the roller conveyor (4) so that the object to be processed (5) can be loaded. The surface of the treatment liquid (3) rises flush with the surface of the treatment liquid (5) and is lowered so as to raise the liquid surface (3a) of the treatment liquid (3) when the treatment object (5) is ultrasonically treated. Single-wafer ultrasonic processing device.
JP11385892A 1992-05-07 1992-05-07 Leaf-type ultrasonic processing equipment Withdrawn JPH05315313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11385892A JPH05315313A (en) 1992-05-07 1992-05-07 Leaf-type ultrasonic processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11385892A JPH05315313A (en) 1992-05-07 1992-05-07 Leaf-type ultrasonic processing equipment

Publications (1)

Publication Number Publication Date
JPH05315313A true JPH05315313A (en) 1993-11-26

Family

ID=14622846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11385892A Withdrawn JPH05315313A (en) 1992-05-07 1992-05-07 Leaf-type ultrasonic processing equipment

Country Status (1)

Country Link
JP (1) JPH05315313A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004030838A1 (en) * 2002-10-07 2004-04-15 Star Cluster Co., Ltd. Ultrsonic washing equipment and ultrasonic washing method
JP2009268948A (en) * 2008-05-01 2009-11-19 Dainippon Printing Co Ltd Film cleaning method and film cleaning device
CN108682620A (en) * 2018-06-07 2018-10-19 通威太阳能(安徽)有限公司 A kind of improvement method and its device of the idler wheel with liquid etched quarter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004030838A1 (en) * 2002-10-07 2004-04-15 Star Cluster Co., Ltd. Ultrsonic washing equipment and ultrasonic washing method
JP2009268948A (en) * 2008-05-01 2009-11-19 Dainippon Printing Co Ltd Film cleaning method and film cleaning device
CN108682620A (en) * 2018-06-07 2018-10-19 通威太阳能(安徽)有限公司 A kind of improvement method and its device of the idler wheel with liquid etched quarter

Similar Documents

Publication Publication Date Title
KR920003879B1 (en) Surface treatment method of semiconductor substrate
US6626196B2 (en) Arrangement and method for degassing small-high aspect ratio drilled holes prior to wet chemical processing
JP2007059868A (en) Substrate processing equipment
KR20010082586A (en) Ultrasonic processing device and electronic parts fabrication method using the same
JPH05315313A (en) Leaf-type ultrasonic processing equipment
JP3624116B2 (en) Processing apparatus and processing method
JP2850118B2 (en) Transport processing equipment
JP3535706B2 (en) Substrate processing equipment
JP2002009033A (en) Washing device for semiconductor wafer
JP3663277B2 (en) Thin glass substrate cleaning method and apparatus
JP2837725B2 (en) Liquid processing equipment for semiconductor wafers
JP2004296810A (en) Etching apparatus and method of substrate
US7332440B2 (en) Wet etching apparatus and method
JP2001170582A (en) Ultrasonic treatment apparatus and manufacture of electronic part using the same
JP2001170584A (en) Ultrasonic treatment apparatus
JP2003303807A (en) Apparatus and method for treatment of substrate
JP2008004890A (en) Ultrasonic cleaning device
JP3374894B2 (en) Substrate processing equipment
JPH05267264A (en) Manufacture of liquid-crystal display device
JPH0448629A (en) Liquid processor for semiconductor wafer
JP4335576B2 (en) Method and apparatus for forming fine circuit on printed circuit board
KR20200017165A (en) Apparatus for Treating Mask and the Method Thereof
JP2004241639A (en) Development processing method and development processor
JPH05206095A (en) Ultrasonic treating tub and single wafer type substrate treating device
KR0146272B1 (en) Method for cleaning board using megasonic

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990803