JPH05315302A - Light exciting reactor - Google Patents
Light exciting reactorInfo
- Publication number
- JPH05315302A JPH05315302A JP12165892A JP12165892A JPH05315302A JP H05315302 A JPH05315302 A JP H05315302A JP 12165892 A JP12165892 A JP 12165892A JP 12165892 A JP12165892 A JP 12165892A JP H05315302 A JPH05315302 A JP H05315302A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- substrate
- chamber
- light source
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は光励起反応を利用した半
導体製造プロセス用の光励起反応装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoexcitation reaction apparatus for a semiconductor manufacturing process utilizing a photoexcitation reaction.
【0002】[0002]
【従来の技術】ハロゲンガスと紫外線を利用し、シリコ
ン基板表面をドライエッチングあるいは、洗浄する方法
がある。この方法は反応ガスを紫外線により活性化する
ため、プラズマを使用する方法よりも基板の損傷を少な
くできる利点がある。2. Description of the Related Art There is a method of dry etching or cleaning the surface of a silicon substrate using halogen gas and ultraviolet rays. Since this method activates the reaction gas by ultraviolet rays, it has an advantage that damage to the substrate can be reduced as compared with the method using plasma.
【0003】しかし、光源を基板と一緒に反応室に入れ
れば光励起反応は光源の近傍で起こり易く、基板表面で
十分な反応を得にくく、光源を痛める可能性がある。ま
た反応室に窓を設け、外部から光を照射する場合は、窓
材の肉厚が厚くなり、紫外線が減衰し十分な紫外線強度
を得られず、処理時間が長くなるという問題がある。However, if the light source is placed in the reaction chamber together with the substrate, the photoexcited reaction is likely to occur near the light source, and it is difficult to obtain a sufficient reaction on the surface of the substrate, which may damage the light source. Further, when a window is provided in the reaction chamber and light is irradiated from the outside, there is a problem that the wall thickness of the window material becomes large, ultraviolet rays are attenuated, sufficient ultraviolet ray intensity cannot be obtained, and processing time becomes long.
【0004】[0004]
【発明が解決しようとする課題】本発明の目的は、基板
上で十分な光励起反応を得られる光励起反応装置を提供
することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a photoexcitation reaction apparatus capable of obtaining a sufficient photoexcitation reaction on a substrate.
【0005】[0005]
【課題を解決するための手段】反応室を光源側と基板側
の二つに石英板等により分割し、二つの部屋を個別に真
空排気し、二つの部屋の圧力が同じになるようにする。
これにより窓材の肉厚を薄くすることが可能になる。ま
た光源側の部屋には、紫外線の吸収の少ない窒素、アル
ゴンなどの不活性ガスを基板側の部屋に流すハロゲンガ
ス等の反応ガスと同量流すことにより基板上で減衰の少
ない紫外線を得ることが可能になり、十分な光励起反応
を得ることが出来る。A reaction chamber is divided into a light source side and a substrate side by a quartz plate or the like, and the two chambers are individually evacuated so that the pressures in the two chambers become the same. ..
This makes it possible to reduce the wall thickness of the window material. In addition, in the room on the light source side, an inert gas such as nitrogen or argon, which absorbs less ultraviolet rays, is passed in the same amount as the reaction gas such as halogen gas, which flows into the room on the substrate side. It becomes possible to obtain a sufficient photoexcitation reaction.
【0006】[0006]
【作用】本発明による光励起反応装置は上記の方法によ
り基板上での紫外線照度を上げ、基板上で光励起反応を
得るものである。The photoexcitation reaction apparatus according to the present invention is to obtain the photoexcitation reaction on the substrate by increasing the illuminance of ultraviolet rays on the substrate by the above method.
【0007】[0007]
【実施例】本発明による実施例を図面を用いて説明す
る。図1は本発明に係る光洗浄装置の概略図である。反
応室1は仕切り窓5により光源側と基板側に分けられて
いる。光源側の部屋(以下、ランプハウス2)には光源
として低圧水銀ランプがセットされており、不活性ガス
導入チューブ6より窒素等の不活性ガスが導入され、バ
ルブ16により流量を制御できるようになっている。基
板側の部屋(以下、処理室3)には反応ガス導入チュー
ブ7より反応ガスが導入され、バルブ17により流量を
制御されている。また、ランプハウス2,処理室3共
に、真空ポンプ13により真空排気され両部屋の圧力は
同じになるようにバルブ18,19及び、ガス導入バル
ブ16,17により調節されている。被処理物である基
板11は処理室3内の温度コントロールのできるステー
ジ12の上にセットされ、所定の処理を施される。Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic view of an optical cleaning device according to the present invention. The reaction chamber 1 is divided into a light source side and a substrate side by a partition window 5. A low-pressure mercury lamp is set as a light source in a room on the light source side (hereinafter referred to as a lamp house 2), and an inert gas such as nitrogen is introduced from an inert gas introducing tube 6 so that a flow rate can be controlled by a valve 16. Is becoming A reaction gas is introduced through a reaction gas introduction tube 7 into a chamber on the substrate side (hereinafter referred to as a processing chamber 3), and a flow rate is controlled by a valve 17. Further, both the lamp house 2 and the processing chamber 3 are evacuated by the vacuum pump 13 and the pressures in the two chambers are adjusted to be the same by the valves 18 and 19 and the gas introduction valves 16 and 17, respectively. The substrate 11, which is the object to be processed, is set on the stage 12 capable of controlling the temperature in the processing chamber 3, and is subjected to a predetermined process.
【0008】次に、この装置を用いた本発明の基板処理
について説明する。ランプハウス2,処理室3は、真空
ポンプ13の圧力を排気バルブ18,19及び、ガス導
入バルブ16,17で20〜0.02Torr に制御する。
ランプハウス2には光源として低圧水銀ランプがセット
され不活性ガスである窒素を流し、処理室3には反応ガ
スが流されている。この時処理室側の圧力をランプハウ
ス側の圧力より多少高くすることにより反応ガスの純度
を高く保つことも可能である。またランプハウスに紫外
線を吸収するオゾン等を混合させることにより基板表面
での紫外線強度をコントロールし、光励起反応をコント
ロールすることも出来る。基板11はロードロック室1
4よりゲートバルブ15を通り温度コントロールされて
いるヒータ12の上に載せられ表面処理を施される。処
理の終了した基板はゲートバルブ15を通り、成膜等の
次工程に送られる。Next, the substrate processing of the present invention using this apparatus will be described. In the lamp house 2 and the processing chamber 3, the pressure of the vacuum pump 13 is controlled to 20 to 0.02 Torr by the exhaust valves 18 and 19 and the gas introduction valves 16 and 17.
A low-pressure mercury lamp is set as a light source in the lamp house 2, nitrogen as an inert gas is flown therein, and a reaction gas is flown in the processing chamber 3. At this time, it is possible to keep the purity of the reaction gas high by making the pressure on the processing chamber side slightly higher than the pressure on the lamp house side. It is also possible to control the photoexcitation reaction by controlling the intensity of ultraviolet rays on the substrate surface by mixing ozone or the like that absorbs ultraviolet rays into the lamp house. Substrate 11 is load lock chamber 1
4 is passed through the gate valve 15 and placed on the temperature-controlled heater 12 to be surface-treated. The processed substrate passes through the gate valve 15 and is sent to the next step such as film formation.
【0009】[0009]
【発明の効果】本発明によれば、基板表面上での光励起
反応を効率的に行うことが出来る。According to the present invention, the photoexcitation reaction on the substrate surface can be efficiently performed.
【図1】本発明による光洗浄装置のブロック図。FIG. 1 is a block diagram of an optical cleaning device according to the present invention.
1…反応室、2…ランプハウス、3…処理室、5…仕切
り窓、6…ガス導入チューブ、7…ガス導入チューブ、
8…排気チューブ、9…排気チューブ、10…低圧水銀
ランプ、11…基板、12…ヒータ、13…真空ポン
プ、14…ロードロック室、15…ゲートバルブ、16
…ガス流量調節バルブ、17…ガス流量調節バルブ、1
8…排気速度調節バルブ、19…排気速度調節バルブ。1 ... Reaction chamber, 2 ... Lamp house, 3 ... Processing chamber, 5 ... Partition window, 6 ... Gas introduction tube, 7 ... Gas introduction tube,
8 ... Exhaust tube, 9 ... Exhaust tube, 10 ... Low-pressure mercury lamp, 11 ... Substrate, 12 ... Heater, 13 ... Vacuum pump, 14 ... Load lock chamber, 15 ... Gate valve, 16
… Gas flow rate control valve, 17… Gas flow rate control valve, 1
8 ... Exhaust speed control valve, 19 ... Exhaust speed control valve.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木村 剛 東京都青梅市藤橋888番地 株式会社日立 製作所青梅工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tsuyoshi Kimura 888 Fujibashi, Ome-shi, Tokyo Hitachi Ltd. Ome factory
Claims (3)
を導入するとともに紫外線を照射して前記基板の表面を
処理する光励起反応を利用した基板処理装置において、
前記反応室に前記基板と光源を隔て、紫外線を透過する
石英板の窓を設け、反応室を二つに分け、二つの反応室
を個別に真空ポンプにより排気させることを特徴とする
光励起反応装置。1. A substrate processing apparatus utilizing a photoexcited reaction in which a substrate is placed in a reaction chamber, a predetermined reaction gas is introduced, and ultraviolet rays are irradiated to treat the surface of the substrate.
A photoexcited reaction apparatus characterized in that a quartz plate window that transmits ultraviolet rays is provided in the reaction chamber to separate the substrate and the light source, the reaction chamber is divided into two, and the two reaction chambers are individually evacuated by a vacuum pump. ..
別にガスを供給することが出来る光励起反応装置。2. The photoexcited reaction device according to claim 1, wherein a gas can be individually supplied to the two reaction chambers.
力を個別に制御することが出来る光励起反応装置。3. The photoexcitation reaction device according to claim 1, wherein the pressures of the two reaction chambers can be individually controlled.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12165892A JPH05315302A (en) | 1992-05-14 | 1992-05-14 | Light exciting reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12165892A JPH05315302A (en) | 1992-05-14 | 1992-05-14 | Light exciting reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05315302A true JPH05315302A (en) | 1993-11-26 |
Family
ID=14816701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12165892A Pending JPH05315302A (en) | 1992-05-14 | 1992-05-14 | Light exciting reactor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05315302A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015119127A (en) * | 2013-12-20 | 2015-06-25 | ウシオ電機株式会社 | Light irradiation device |
-
1992
- 1992-05-14 JP JP12165892A patent/JPH05315302A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015119127A (en) * | 2013-12-20 | 2015-06-25 | ウシオ電機株式会社 | Light irradiation device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1026549B1 (en) | Processing system adapted for semiconductor device manufacture | |
US4689112A (en) | Method and apparatus for dry processing of substrates | |
US4936940A (en) | Equipment for surface treatment | |
JPH10512100A (en) | Apparatus and method for conditioning a surface | |
JPS631097B2 (en) | ||
JPH06181188A (en) | Method and system for etching | |
US6143477A (en) | Dual wavelength UV lamp reactor and method for cleaning/ashing semiconductor wafers | |
JPH05315302A (en) | Light exciting reactor | |
JP3184988B2 (en) | Crystal plane anisotropic dry etching method | |
JPS6037733A (en) | Dry etching apparatus | |
JPS593931A (en) | Forming of thin film | |
JPH03229415A (en) | Method of dry-cleaning semiconductor device | |
JPS6075327A (en) | Ultraviolet ray generating device and material treating device using it | |
JPS61119028A (en) | Photo-chemical vapor deposition equipment | |
JPH0717146Y2 (en) | Wafer processing equipment | |
JPH03268320A (en) | Optical cvd system | |
JPS6212121A (en) | Photo processing equipment | |
JPH0555186A (en) | Surface processing method | |
JP2002530859A (en) | Equipment for UV wafer heating and photochemistry | |
JPH07135150A (en) | Organic substance eliminating method and organic substance eliminating equipment | |
JPS63133627A (en) | Light irradiating apparatus | |
JPS63126229A (en) | Processor | |
JPH0821560B2 (en) | Method for manufacturing semiconductor device | |
JPH05347247A (en) | Photochemical reaction device | |
JPS61288431A (en) | Manufacture of insulating layer |