JPH05312642A - Infrared ray detector - Google Patents
Infrared ray detectorInfo
- Publication number
- JPH05312642A JPH05312642A JP4122388A JP12238892A JPH05312642A JP H05312642 A JPH05312642 A JP H05312642A JP 4122388 A JP4122388 A JP 4122388A JP 12238892 A JP12238892 A JP 12238892A JP H05312642 A JPH05312642 A JP H05312642A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- infrared
- infrared ray
- shaped support
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、赤外線のエネルギーを
電気信号に変換して検出する赤外線検知器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detector for converting infrared energy into an electric signal for detection.
【０００２】上述の赤外線検知器は、室温（ 300Ｋ）の
持つエネルギーｋＴ（ｋはボルツマン定数，Ｔは絶対温
度）の影響を除くために、液体窒素, 或いはジュールト
ムソン冷却器によって、極めて低い温度（80Ｋ前後）に
冷却して使用している。In order to eliminate the influence of the energy kT (k is the Boltzmann constant, T is the absolute temperature) at room temperature (300K), the infrared detector described above uses liquid nitrogen or a Joule-Thomson cooler to make the temperature extremely low ( It is used by cooling to around 80K.
【０００３】[0003]
【従来の技術】図３は、従来例を分離した形で示す斜視
図である。図３において、１は、サファイア等からなる
基板である。2. Description of the Related Art FIG. 3 is a perspective view showing a conventional example in a separated form. In FIG. 3, reference numeral 1 is a substrate made of sapphire or the like.
【０００４】２は、基板１の表面に等ピッチで配列形成
した赤外線検出素子である。それぞれの赤外線検出素子
２は、HgCdTe等の角片（一辺が50μm 〜100 μm)で相対
向する側縁からそれぞれ出力導体パターン３を導出して
いる。Reference numeral 2 denotes an infrared detecting element arranged on the surface of the substrate 1 at an equal pitch. Each infrared detection element 2 is a square piece (each side is 50 μm to 100 μm) of HgCdTe or the like, and the output conductor pattern 3 is derived from each side edge facing each other.
【０００５】10は、Ｚn S よりなる赤外線透過ブロック
である。赤外線透過ブロック10の底面にアルミニウム等
を蒸着して不透明膜11を形成し、その不透明膜11にそれ
ぞれの赤外線検出素子２に対応して、赤外線が透過する
角形の窓15を設けている。Reference numeral 10 is an infrared transmitting block made of Z n S. An opaque film 11 is formed by vapor-depositing aluminum or the like on the bottom surface of the infrared transmitting block 10, and the opaque film 11 is provided with a rectangular window 15 for transmitting infrared light corresponding to each infrared detecting element 2.
【０００６】この窓15の寸法は、赤外線検出素子２の平
面視寸法にほぼ等しい。従来は、上述の基板１の両端部
にそれぞれに所望に高い（数10μm の所定の高さ) バン
プ５を設け、このバンプ５に赤外線透過ブロック10を載
置し赤外線透過ブロック10の底面（不透明膜11部分）を
基板１に接着剤を用いて接着している。The size of the window 15 is substantially equal to the size of the infrared detecting element 2 in plan view. Conventionally, a desired high bump 5 (predetermined height of several tens of μm) is provided on each end of the above-mentioned substrate 1, and the infrared transmission block 10 is mounted on the bump 5 and the bottom surface of the infrared transmission block 10 (opaque). The film 11 portion) is adhered to the substrate 1 using an adhesive.
【０００７】従来は上述のようにバンプ５によって、赤
外線検出素子２の受光面と赤外線透過ブロック10の窓15
間の高さを定めて、赤外線検出素子の視野角を決定する
とともに、迷光を防止して、赤外線検知器の空間分解能
の向上を計っている。Conventionally, the light receiving surface of the infrared detecting element 2 and the window 15 of the infrared transmitting block 10 are formed by the bumps 5 as described above.
The height of the gap is determined to determine the viewing angle of the infrared detection element, stray light is prevented, and the spatial resolution of the infrared detector is improved.
【０００８】[0008]
【発明が解決しようとする課題】ところで、赤外線検知
器の温度は、不使用時は室温（ 300Ｋ）であるが、稼働
時は約80Ｋである。The temperature of the infrared detector is room temperature (300K) when it is not used, but is about 80K when it is in operation.
【０００９】一方、基板の熱膨張係数（サファイアの熱
膨張係数は5.3 ×10-6／Ｋ）と赤外線透過ブロックの熱
膨張係数（Ｚn S の熱膨張係数は6.9 ×10-6／Ｋ）とは
異なる。On the other hand, the coefficient of thermal expansion of the substrate (the coefficient of thermal expansion of sapphire is 5.3 × 10 −6 / K) and the coefficient of thermal expansion of the infrared transmitting block (the coefficient of thermal expansion of Z n S is 6.9 × 10 −6 / K). Is different from.
【００１０】この熱膨張係数の差に起因して、従来の構
造の赤外線検知器は、赤外線透過ブロックが破壊する恐
れがあった。また、バンプは金属を蒸着等して設けたも
のである。このバンプ形成には、設備費の高い蒸着装置
が必要であり且つ形成に要する時間が長い。即ち従来の
赤外線検知器はコスト高になる恐れがあった。Due to this difference in coefficient of thermal expansion, in the infrared detector having the conventional structure, the infrared transmitting block may be broken. The bumps are formed by vapor-depositing metal. This bump formation requires a vapor deposition apparatus with high equipment cost and takes a long time to form the bump. That is, the conventional infrared detector may have a high cost.
【００１１】本発明はこのような点に鑑みて創作された
もので、赤外線透過ブロックが破壊する恐れがなく且つ
低コストの赤外線検知器を提供することを目的としてい
る。The present invention was created in view of the above points, and it is an object of the present invention to provide an infrared detector which is free from the risk of breaking the infrared transmitting block and which is low in cost.
【００１２】[0012]
【課題を解決するための手段】上記の目的を達成するた
めに本発明は、図１に例示したように、表面に赤外線検
出素子２が並列した基板１と、基板１の表面に固着する
枠形支持台20と、底面に形成した不透明膜11部分に、そ
れぞれの赤外線検出素子２に対応して窓15が並列した、
枠形支持台20上に固着する赤外線透過ブロック10とを、
備えた構造とする。In order to achieve the above object, the present invention, as illustrated in FIG. 1, has a substrate 1 on which infrared detection elements 2 are arranged in parallel, and a frame fixed to the surface of the substrate 1. The window 15 is arranged in parallel with the shape support base 20 and the opaque film 11 portion formed on the bottom surface so as to correspond to each infrared detection element 2.
Infrared transmission block 10 fixed on the frame-shaped support 20,
The structure will be provided.
【００１３】そして、枠形支持台20の熱膨張係数が、基
板１の熱膨張係数と赤外線透過ブロック10の熱膨張係数
との中間値を有する材料を選択するものとする。基板１
をサファイアとし、枠形支持台20をゲルマニュームまた
はセラミックスとし、赤外線透過ブロック10をＺn S と
する。Then, it is assumed that a material whose thermal expansion coefficient of the frame-shaped support 20 is an intermediate value between the thermal expansion coefficient of the substrate 1 and the thermal expansion coefficient of the infrared transmitting block 10 is selected. Board 1
Is sapphire, the frame-shaped support 20 is germanium or ceramics, and the infrared transmission block 10 is Z n S.
【００１４】或いは、赤外線透過ブロック10の底部を押
入する額縁形凹部25を、枠形支持台20の中央に設け、額
縁形凹部25の段端面26と枠形支持台20の底面21間の高さ
Ｈを、所定に設定するものとする。Alternatively, a frame-shaped recess 25 for pressing the bottom of the infrared transmitting block 10 is provided in the center of the frame-shaped support 20, and the height between the step end face 26 of the frame-shaped recess 25 and the bottom 21 of the frame-shaped support 20 is increased. The height H is set to a predetermined value.
【００１５】[0015]
【作用】本発明によれば、基板と赤外線透過ブロックと
は直接密着しているものでなく、両者のほぼ中間の熱膨
張係数を有する枠形支持台を介して密着している。According to the present invention, the substrate and the infrared ray transmitting block are not in direct contact with each other, but are in close contact with each other through a frame-shaped support having a coefficient of thermal expansion approximately in the middle between them.
【００１６】即ち、本発明に係わる赤外線検知器は、室
温ー低温（ 300Ｋー80Ｋ）という温度差が大きいサイク
ルが繰り返えされても、基板と枠形支持台間、及び枠形
支持台と赤外線透過ブロック間に発生する熱応力が小さ
いので、赤外線透過ブロックが破壊することがない。That is, in the infrared detector according to the present invention, even if a cycle in which the temperature difference between room temperature and low temperature (300K-80K) is large is repeated, the infrared detector between the substrate and the frame-shaped support and the frame-shaped support are Since the thermal stress generated between the infrared transmitting blocks is small, the infrared transmitting blocks do not break.
【００１７】一方、ゲルマニュームまたはセラミックス
等の枠形支持台の中央部の額縁形凹部、及び額縁形凹部
の段端面と枠形支持台の底面間の高さは、エッチング加
工・研磨加工等で比較的簡単に高精度に形成することが
できる。On the other hand, the frame-shaped recess at the center of the frame-shaped support such as germanium or ceramics, and the height between the step end surface of the frame-shaped recess and the bottom of the frame-shaped support are compared by etching or polishing. It can be formed easily and accurately.
【００１８】したがって、本発明の赤外線検知器は低コ
ストである。なお、中央部に額縁形凹部を設けた枠形支
持台は、外周部の板厚が所望に大きいので、強度が強
い。Therefore, the infrared detector of the present invention is low in cost. The frame-shaped support base provided with a frame-shaped recess in the central portion has a large plate thickness at the outer peripheral portion, and therefore has a high strength.
【００１９】[0019]
【実施例】以下図を参照しながら、本発明を具体的に説
明する。なお、全図を通じて同一符号は同一対象物を示
す。The present invention will be described in detail with reference to the drawings. The same reference numerals denote the same objects throughout the drawings.
【００２０】図１は、本発明の実施例の一部破断斜視図
であり、図２は枠形支持台の詳細図である。図１におい
て、１は、サファイア（熱膨張係数は5.3 ×10-6／Ｋ）
からなる基板である。FIG. 1 is a partially cutaway perspective view of an embodiment of the present invention, and FIG. 2 is a detailed view of a frame-shaped support base. In FIG. 1, 1 is sapphire (coefficient of thermal expansion is 5.3 × 10 −6 / K)
It is a substrate consisting of.
【００２１】基板１の表面に等ピッチで角片状の赤外線
検出素子２を並列して設け、それぞれの赤外線検出素子
２の相対向する側縁からそれぞれ出力導体パターン３を
導出している。On the surface of the substrate 1, infrared detecting elements 2 in the shape of a rectangular piece are provided in parallel at equal pitches, and output conductor patterns 3 are derived from the side edges of the infrared detecting elements 2 facing each other.
【００２２】一方、Ｚn S （熱膨張係数は6.9 ×10-6／
Ｋ）よりなる赤外線透過ブロック10の底面に、アルミニ
ウム等を蒸着して不透明膜11（膜厚は数μm 程度) を形
成し、その不透明膜11にそれぞれの赤外線検出素子２に
対応して、赤外線が透過する角形の窓15を設けている。On the other hand, Z n S (coefficient of thermal expansion is 6.9 × 10 -6 /
On the bottom surface of the infrared ray transmitting block 10 made of K), an opaque film 11 (having a thickness of about several μm) is formed by vapor-depositing aluminum or the like. Is provided with a rectangular window 15 through which light is transmitted.
【００２３】20は、ゲルマニューム（熱膨張係数は6.0
×10-6／Ｋ）、またはセラミックス（熱膨張係数は6.5
×10-6／Ｋ）よりなる、外形寸法が赤外線透過ブロック
10に相似でそれよりも所望に大きい枠形支持台である。20 is germanium (coefficient of thermal expansion 6.0
× 10 -6 / K) or ceramics (coefficient of thermal expansion is 6.5
X10 -6 / K) outer dimensions are infrared transparent blocks
A frame-shaped support similar to 10 and larger than that desired.
【００２４】詳細を図２に示したように、枠形支持台20
の中央部に、赤外線透過ブロック10の底部を挿入する額
縁形凹部25を設けている。この額縁形凹部25の段端面26
と枠形支持台20の底面21間の高さＨは、所望の視野角と
なる設定された高さ（数10μm の所定の高さ) である。As shown in detail in FIG. 2, the frame type support 20
A frame-shaped recess 25 into which the bottom of the infrared transmitting block 10 is inserted is provided in the center of the. The step end surface 26 of this frame-shaped recess 25
The height H between the frame-shaped support 20 and the bottom surface 21 of the frame-shaped support 20 is set to a desired viewing angle (a predetermined height of several tens of μm).
【００２５】なお、枠形支持台20、枠形支持台20の中央
部の額縁形凹部25、及び額縁形凹部の段端面と枠形支持
台の底面間の高さＨは、エッチング加工・研磨加工等で
比較的簡単に高精度に形成することができる。The frame-shaped support 20, the frame-shaped recess 25 at the center of the frame-shaped support 20, and the height H between the step end face of the frame-shaped recess and the bottom of the frame-shaped support are etched and polished. It can be formed relatively easily with high precision by processing or the like.
【００２６】上述の枠形支持台20の額縁形凹部25に、赤
外線透過ブロック10の底部を押入し、赤外線透過ブロッ
ク10の底面を段端面26に当接させた状態で、赤外線透過
ブロック10の外周面と額縁形凹部25の側壁とを接着剤で
接着する等して、赤外線透過ブロック10を枠形支持台20
に固着している。The bottom portion of the infrared transmission block 10 is pushed into the frame-shaped recess 25 of the frame-shaped support 20 described above, and the bottom surface of the infrared transmission block 10 is brought into contact with the step end face 26, so that the infrared transmission block 10 The infrared transmission block 10 is fixed to the frame-shaped support 20 by bonding the outer peripheral surface and the side wall of the frame-shaped recess 25 with an adhesive agent.
Is stuck to.
【００２７】そして、赤外線検出素子２の直上に窓15が
位置するように位置合わせして、枠形支持台20の底面21
を基板１に当接して載置し、接着剤28を用いて枠形支持
台20を基板１に接着している。Then, the window 15 is aligned so that the window 15 is located directly above the infrared detecting element 2, and the bottom surface 21 of the frame-shaped support 20 is positioned.
Is placed in contact with the substrate 1 and the frame-shaped support 20 is adhered to the substrate 1 using an adhesive 28.
【００２８】なお、この接着剤28の膜厚は非常に薄い
(0.1μm 程度) ものである。したがって、赤外線検出素
子２の受光面と窓15との距離は、額縁形凹部25の段端面
26と枠形支持台20の底面21間の高さＨによって定まる。The thickness of the adhesive 28 is very thin.
(About 0.1 μm). Therefore, the distance between the light-receiving surface of the infrared detection element 2 and the window 15 is determined by the step end surface of the frame-shaped recess 25.
It is determined by the height H between 26 and the bottom surface 21 of the frame-shaped support 20.
【００２９】したがって、本発明の赤外線検知器は、所
定の視野角が容易に得られので、空間分解能が良好であ
る。一方、基板１と赤外線透過ブロック10とは、両者の
熱膨張係数のほぼ中間の熱膨張係数の枠形支持台20を介
して固着している。したがって、 300Ｋー80Ｋという温
度差が大きいサイクルが繰り返えされても、赤外線透過
ブロック10は破壊することがない。Therefore, the infrared detector of the present invention can easily obtain a predetermined viewing angle, and thus has good spatial resolution. On the other hand, the substrate 1 and the infrared ray transmitting block 10 are fixed to each other via a frame-shaped support base 20 having a coefficient of thermal expansion which is approximately in the middle of the coefficient of thermal expansion of both. Therefore, even if a cycle with a large temperature difference of 300K-80K is repeated, the infrared transmitting block 10 is not destroyed.
【００３０】なお、単なる薄い平板（板厚が数10μm)よ
りなる枠形支持台ではなく、枠厚が十分に厚い枠形支持
台に額縁形凹部を設けることで、枠形支持台の強度が強
くなるという利点がある。It is to be noted that the frame-shaped support base is provided with a frame-shaped concave portion on the frame-shaped support base having a sufficiently thick frame thickness, instead of the frame-shaped support base formed of a simple thin flat plate (thickness is several tens of μm). It has the advantage of becoming stronger.
【００３１】[0031]
【発明の効果】以上説明したように、本発明の赤外線検
知器は、所定の視野角が容易に得られて空間分解能が良
好であるばかりでなく、赤外線透過ブロック或いは枠形
支持台が損傷しないという優れた効果を有する。As described above, according to the infrared detector of the present invention, not only the predetermined viewing angle is easily obtained and the spatial resolution is good, but also the infrared transmitting block or the frame-shaped support is not damaged. It has an excellent effect.
【００３２】また、安価の製造設備で、高精度の枠形支
持台を簡単製作することができるので、赤外線検知器が
低コストである。Further, since the highly accurate frame-shaped support can be easily manufactured with inexpensive manufacturing equipment, the cost of the infrared detector is low.
【図１】 本発明の実施例の一部破断斜視図FIG. 1 is a partially cutaway perspective view of an embodiment of the present invention.
【図２】 枠形支持台の詳細図[Fig. 2] Detailed view of frame-shaped support
【図３】 従来例を分離した形で示す斜視図FIG. 3 is a perspective view showing a conventional example in a separated form.
１ 基板 ２ 赤外線検出素子 ３ 出力導体パターン 10 赤外線透過ブロック 11 不透明膜 15 窓 20 枠形支持台 25 額縁形凹部 1 substrate 2 infrared detection element 3 output conductor pattern 10 infrared transmission block 11 opaque film 15 window 20 frame-shaped support 25 frame-shaped recess
───────────────────────────────────────────────────── フロントページの続き (72)発明者 廣田 耕治 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 上田 知史 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koji Hirota 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor Tomofumi Ueda, 1015, Kamedotachu, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited
Claims (3)
板(1) と、 該基板(1) の表面に固着する枠形支持台(20)と、 底面に形成した不透明膜(11)部分に、それぞれの該赤外
線検出素子(2) に対応して窓(15)が並列した、該枠形支
持台(20)上に固着する赤外線透過ブロック(10とを備
え、 該枠形支持台(20)の熱膨張係数が、該基板(1) の熱膨張
係数と該赤外線透過ブロック(10)の熱膨張係数との中間
値を有することを特徴とする赤外線検知器。1. A substrate (1) having infrared detection elements (2) arranged in parallel on the surface, a frame-shaped support (20) fixed to the surface of the substrate (1), and an opaque film (11) formed on the bottom surface. The frame-shaped support base is provided with an infrared-transmissive block (10) which is fixed to the frame-shaped support base (20) in which a window (15) is juxtaposed corresponding to each of the infrared detection elements (2). An infrared detector characterized in that the coefficient of thermal expansion of (20) has an intermediate value between the coefficient of thermal expansion of the substrate (1) and the coefficient of thermal expansion of the infrared transmitting block (10).
形支持台(20)の材料がゲルマニュームまたはセラミック
スであり、赤外線透過ブロック(10)の材料がＺn S であ
ることを特徴とする請求項１記載の赤外線検知器。Wherein a material of the substrate (1) is sapphire, the material of the frame-shaped supporting base (20) is germanium or ceramics, and wherein a material of the infrared transmission block (10) is Z n S The infrared detector according to claim 1.
る額縁形凹部(25)を、枠形支持台(20)の中央に設け、該
額縁形凹部(25)の段端面(26)と該枠形支持台(20)の底面
(21)間の高さ（Ｈ）を、所定に設定したことを特徴とす
る請求項１または請求項２記載の赤外線検知器。3. A frame-shaped recess (25) for pushing the bottom of the infrared transparent block (10) is provided at the center of the frame-shaped support (20), and a step end surface (26) of the frame-shaped recess (25) is formed. Bottom of the frame-shaped support (20)
The infrared detector according to claim 1 or 2, wherein the height (H) between the (21) is set to a predetermined value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4122388A JPH05312642A (en) | 1992-05-15 | 1992-05-15 | Infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4122388A JPH05312642A (en) | 1992-05-15 | 1992-05-15 | Infrared ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05312642A true JPH05312642A (en) | 1993-11-22 |
Family
ID=14834566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4122388A Withdrawn JPH05312642A (en) | 1992-05-15 | 1992-05-15 | Infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05312642A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010175302A (en) * | 2009-01-27 | 2010-08-12 | Panasonic Electric Works Co Ltd | Infrared sensor |
| JP2010197335A (en) * | 2009-02-27 | 2010-09-09 | Ritsumeikan | Infrared sensor and method for manufacturing infrared sensor |
| WO2013190793A1 (en) * | 2012-06-18 | 2013-12-27 | パナソニック株式会社 | Infrared detection device |
-
1992
- 1992-05-15 JP JP4122388A patent/JPH05312642A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010175302A (en) * | 2009-01-27 | 2010-08-12 | Panasonic Electric Works Co Ltd | Infrared sensor |
| JP2010197335A (en) * | 2009-02-27 | 2010-09-09 | Ritsumeikan | Infrared sensor and method for manufacturing infrared sensor |
| WO2013190793A1 (en) * | 2012-06-18 | 2013-12-27 | パナソニック株式会社 | Infrared detection device |
| JPWO2013190793A1 (en) * | 2012-06-18 | 2016-02-08 | パナソニックＩｐマネジメント株式会社 | Infrared detector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990803 |