JPH05304220A - Resin sealed semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a resin sealed semiconductor device in which stress to be exerted on a crossing part of upper and lower conductive films by sealing resin is lessened and a chip is downsized without sacrifice of reliability of the conductive film. CONSTITUTION:Crossing part of a first conductive film 3 formed on a semiconductor substrate and a second conductive film 5 formed thereon through an interlayer insulation film is isolated from other parts and the first conductive film 3 is connected through through holes 7, 8 made through the interlayer insulation film with an isolated part 53 of the second conductive film 5 which is connected with an isolated part 33 of the first conductive film 3 thus crossing the conductive films while converting the layers. This structure facilitates sliding of each of the conductive films 3, 5 and lessens stress of resin.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a semiconductor device in which stress in a conductor film for wiring is relaxed.

[0002]

2. Description of the Related Art Conventionally, in a resin-sealed semiconductor device, a stress caused by a wiring conductor film has been generated. For example,
The crossing of the power supply line and the ground line in the peripheral portion of the semiconductor device chip will be described as an example. FIG. 6 is a plan view, and FIG. 7 is a cross-sectional view taken along the line D-D. As shown in these drawings, a semiconductor element region 1A is formed on one main surface of the semiconductor substrate 1,
A first conductive film 3 for ground wiring is formed of aluminum or the like through the first interlayer insulating film 2, and a second conductive film for power wiring is formed through a second interlayer insulating film 4 such as an oxide film. Membrane 5
And is covered with a protective insulating film 6 such as phosphorus silicate glass or silicon nitride film. Second conductive film 5
A power supply bonding pad 51 is formed on a part of
The protective insulating film 6 is exposed through a window obtained by etching.

In such a resin-encapsulated semiconductor device, it has been clarified in a temperature cycle test or the like that cracks occur in the protective insulating film and the interlayer insulating film due to the stress of the mold resin or the like. In particular, the stress from the resin acts remarkably at the location where the first and second conductive films 3 and 5 intersect.
Due to this stress, cracks at this intersection are significant. For this reason, conventionally, a slit is formed in a conductive film formed of aluminum or the like (Japanese Patent Publication No.
No. 63-046981), or a conductive film for dummy is formed adjacent to the conductive film to reduce the stress.

[0004]

However, as a measure for forming slits in the conductive film, the cross-sectional area of the conductive film is reduced and the current density is increased, which causes reliability problems such as heat generation and resistance. Further, in the countermeasure for forming the dummy conductive film, it is necessary to secure a region for extending the dummy conductive film, which is a problem in that it is an obstacle to downsizing the chip size. It is an object of the present invention to provide a resin-encapsulated semiconductor device that enables miniaturization of a chip without lowering reliability of a conductive film.

[0005]

According to the present invention, a portion where a first conductive film formed on a semiconductor substrate and a second conductive film formed on the semiconductor film via an interlayer insulating film cross each other is provided. The first conductive film is separated from the other parts respectively, and the first conductive film is connected to the separated part of the second conductive film through the through hole formed in the interlayer insulating film, and the second conductive film is separated from the first conductive film. The conductive films are connected to each other and converted into layers to cross each other.

[0006]

That is, the present inventor evaluated the stress applied to the semiconductor device sealed with the mold resin, and as a result, the stress was concentrated on the peripheral portion of the chip of the semiconductor device and the width of the conductive film formed was narrow. It was found that the protective film and the interlayer insulating film did not crack so much. This is because the conductive film having a narrow width has a smaller stress generated in the film itself and the conductive film itself slides more easily, and this effect becomes more remarkable as the conductive film in the upper layer. From this, in the present invention, the conductive film formed on the semiconductor substrate has a structure in which sliding is as easy as possible.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. 1 is a plan view showing a first embodiment of the present invention, FIG. 2 is a sectional view taken along the line AA of FIG. 1, and FIG. 3 is a sectional view taken along the line BB of FIG. As shown in these figures, in the present embodiment, the present invention is applied to the intersections of the wide wiring conductive films such as the power supply lines and the ground lines at the chip corners. 1 to 3
In, the first interlayer insulating film 2 is formed on the semiconductor substrate 1, and the first conductive film 3 is formed thereon. Further, a second interlayer insulating film 4 is formed on this, and a second conductive film 5 is formed on this. A protective insulating film 6 is deposited on the second conductive film 5. Here, the first conductive film 3 is for ground wiring and is formed along the corner portion of the chip. Further, the second conductive film 5 is used here for power supply wiring, a power supply bonding pad 51 is formed at one end thereof, and the other end 52 is connected to the element region as power supply wiring.

Here, at the intersection of the first conductive film 3 and the second conductive film 5, respective overlapping portions 3 are formed.
3,53 is separated from other parts, and these separated parts 33,5
By electrically connecting 3 to each other through the through holes 7 and 8 provided in the second interlayer insulating film 4, the conductive films 3 and 5 are connected to each other in an exchanged state. That is, the power supply bonding pad 51 formed of the second conductive film 5 is connected to the separation portion 33 of the first conductive film 3 through the through hole 8, and the power supply is again supplied from the separation portion 33 through the through hole 8. It is connected to the second conductive film 52 for wiring. or,
The first conductive film 31 for ground wiring is connected to the separated portion 53 of the second conductive film 5 through the through hole 7, and from this separated portion 53 again through the through hole 7 for the other ground wiring. 1 is connected to the conductive film 32. The first and second conductive films 3 and 5 are made of an aluminum material here, and have a width of 100 μm and a thickness of 0.7 μm. The first interlayer insulating film 2 is a BPSG film having a thickness of 0.5 μm, the second interlayer insulating film 4 is a plasma oxide film having a thickness of 0.7 μm, and the protective insulating film 6 is a plasma nitride film having a thickness of 1.0 μm. .

Therefore, according to this structure, since the conductive films of the first and second conductive films 3 and 5 are exchanged with each other at the intersecting portions, this portion is separated from the other and easily slides. Has become. Therefore, the occurrence of cracks in the protective insulating film and the interlayer insulating film is suppressed.
As a result, in the past, cracks were generated due to the stress generated when conductive films having a width of 30 μm or more were crossed, but in the present invention, cracks are generated even when conductive films having a width of 100 μm are crossed. It can be prevented.

FIG. 4 is a plan view showing a second embodiment of the present invention, and FIG. 5 is a sectional view taken along line CC of FIG. In the above-mentioned embodiment, since the conductive films are exchanged only at the intersections of the first and second conductive films 3 and 5, the direction parallel to the power supply line (the line BB in FIG. 1 shown in FIG. 3) is used. Although the second conductive film 5 does not have a step in the cross-sectional direction), only the second conductive film 5 exists in the direction parallel to the ground line (the cross-sectional direction of the line AA in FIG. 1 shown in FIG. 2). Second due to wiring step
The stress on the conductive film is increased.

Therefore, in this embodiment, the second conductive films 54 and 55 are formed on the ground wiring portions 31 and 32 formed of the first conductive film 3 with the second interlayer insulating film 4 interposed therebetween. However, this is configured as a dummy wiring. By forming the dummy wirings 54 and 55, no wiring step is formed in the second conductive film 5, and the stress applied to the second conductive film 5 is reduced. Since the dummy wirings 54 and 55 are formed only on the first conductive films 31 and 32, even if a crack occurs in the second interlayer insulating film 4 below the dummy wirings, the electrical characteristics of the semiconductor device will not be affected. Does not affect.

[0012]

As described above, according to the present invention, in the resin-sealed semiconductor device, the wiring layers are mutually converted only at the portions where the lower wiring layer and the upper wiring layer intersect with each other through the interlayer insulating film. Since the upper and lower wiring layers are easily slid by the stress of the molding resin or the like, cracks are less likely to be formed in the interlayer insulating film and the protective insulating film, and the reliability of the wiring can be significantly improved.

[Brief description of drawings]

FIG. 1 is a plan view of an essential part of a first embodiment of the present invention.

FIG. 2 is a sectional view taken along the line AA of FIG.

FIG. 3 is a sectional view taken along line BB of FIG.

FIG. 4 is a plan view of an essential part of a second embodiment of the present invention.

5 is a cross-sectional view taken along the line CC of FIG.

FIG. 6 is a plan view of a corner portion of a conventional semiconductor device.

7 is a cross-sectional view taken along the line DD of FIG.

[Explanation of symbols]

 1 Semiconductor Substrate 2 First Interlayer Insulating Film 3 First Conductive Film 4 Second Interlayer Insulating Film 5 Second Conductive Film 6 Protective Insulating Film 7,8 Through Hole 33,53 Separation Part

Claims (1)

[Claims] 1. A semiconductor device comprising a first conductive film formed on a semiconductor substrate and a second conductive film formed thereon via an interlayer insulating film and sealed with a resin, The intersecting portions of the first and second conductive films are separated from each other, and the first conductive film is connected to the separated portion of the second conductive film through the through hole formed in the interlayer insulating film.
The conductive film of (1) is connected to the separated portion of the first conductive film, and the conductive films are layer-converted and crossed, and the resin-encapsulated semiconductor device.