JPH05297346A - Active matrix type liquid crystal display device - Google Patents

Abstract

PURPOSE:To reduce the influence of parasitic capacity upon display characteristics by connecting a light shield film, formed overlapping. a pixel electrode and an adjacent gate electric conductor, to the counter electrode of a counter substrate through the gate electric conductor. CONSTITUTION:A pixel positioned in the center is an (N-1)th pixel and the pixel above it is an (N)th pixel. The light shield film 10a which is formed overlapping with the (N)th pixel electrode 14 and the (N-1)th gate electric conductor 2 adjoining to the pixel electrode 14 is connected to the counter electrode on the counter substrate side thorugh the gate electric conductor 2. Consequently, part of the parasitic capacity generated between the pixel electrode 14 and light shield film 10a, and the pixel electrode 14 and gate electric conductor 2 as shown by hatching is connected in parallel to the capacity of liquid crystal and can be utilized as storage capacity. The extent of the influence of the parasitic capacity upon the display characteristics is represented as the ratio (parasitic capacity)/(capacity of liquid crystal + storage capacity + parasitic capacity) and the denominator of the expression becomes large, so the extent of the influence becomes small.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device.

[0002]

2. Description of the Related Art A liquid crystal display device having a feature of thinness and low power consumption has been attracting attention as a display device replacing a CRT (cathoderay tube). Among them, an active matrix drive type liquid crystal display device using a thin film transistor (hereinafter abbreviated as TFT) array as a switching element has advantages such as high response speed of liquid crystal and high display quality. Especially amorphous silicon (hereinafter a-S
Since a TFT using (abbreviated as i) can be formed at a low temperature, it is considered that it is possible to increase the screen size, the definition, and the cost of a display device, and in recent years, the technical development thereof has been active.

FIG. 12 is a plan view showing an example of a conventional liquid crystal display device of the TFT type. FIG. 13 shows A- of FIG.
FIG. 14 is a cross-sectional view taken along line A ′, and FIG. 14 is BB ′ of FIG. 12.
It is sectional drawing by a line.

This display device includes a pixel electrode 114 and a TF.
The counter substrate 123 is disposed so as to face the active matrix substrate 122 in which T124 is formed in a matrix, and the liquid crystal layer 116 is sandwiched between the two substrates 122 and 123.

The active matrix substrate 122 is
A gate wiring 102 as a scanning line that is long in the lateral direction is formed on a glass substrate 101 as an insulating substrate, which is the lowermost layer, and the gate wiring 102 branches off from the gate wiring 102.
The gate electrode 102a of the FT 124 is formed.

The gate wiring 102 and the gate electrode 10
A first insulating film 103 is formed by depositing SiN _x on the glass substrate 101 on which 2a has been formed. Further, on the first insulating film 103, a first insulating film 103 is formed so as to cover the formation position of the gate electrode 102a. -Si layer 104 is laminated, and SiN _{x is formed} thereon.
A second insulating film 105 made of is formed. On the glass substrate 101 in such a state, a metal is deposited to form a source wiring 107 as a signal line in the vertical direction, and the TFT 124 branches off from the source wiring 107.
Source electrode 107a is formed. The source electrode 107a partially overlaps with the left side portion of the gate electrode 102a. The drain electrode / light-shielding film 108 of the TFT 124 is formed on the right side of the gate electrode 102a. The right side portion of the drain electrode / shading film 108 is formed so as to partially overlap the gate wiring 102,
The overlapping portion also serves as a light shielding film. A light shielding film 110 is formed on the side of the gate wiring 102 adjacent to the gate wiring 102 where the drain electrode / light shielding film 108 overlaps with the pixel electrode 114 interposed therebetween so as to partially overlap the gate wiring 102.

Further, on the glass substrate 101 in this state, a third insulating film 112 partially having a contact hole 113 is formed almost all over the surface. The contact hole 113 is formed on the third insulating film 112.
The pixel electrode 114 is formed by depositing ITO in a state of being in contact with the drain electrode / light-shielding film 108 via
Further, an alignment film 115 is formed on it.

The counter substrate 123, which is disposed so as to face the active matrix substrate 122, has a color filter 120 formed on a glass substrate 121 as an insulating substrate, and a transparent conductive film faces the entire surface thereof. Electrode 118
Is formed as. Further, a counter substrate side alignment film 117 is formed thereon. The color filter 120
May be omitted if unnecessary.

The active matrix type liquid crystal display device having such a structure is manufactured by the following method.

First, a method of manufacturing the active matrix substrate 122 will be described. A metal thin film is deposited on the transparent insulating substrate 101 to form a gate wiring 102 and a gate electrode 102a as scanning lines having a pattern as illustrated.

Next, SiN _x to be the first insulating film 103 is formed.
The film is deposited over the entire surface and becomes a semiconductor layer in sequence a-
After the Si layer 104 and the SiN _x film to be the second insulating film 105 are continuously deposited over the entire surface, the second insulating film 105 is patterned as shown in the figure.

Next, after depositing a metal thin film, a source wiring 107 and a source electrode 107a as signal lines having a pattern as shown in the figure, a light shielding film 108 also serving as a drain electrode, and a light shielding film 109 are formed. However, before forming the source wiring 107 and the like, the a-Si layer 1 doped with P for forming ohmic contact with the a-Si layer 104 is formed.
06 is formed.

Next, an insulating film is deposited over the entire surface of the substrate 101 in this state to form a third insulating film 112, and a contact hole 113 is formed in the third insulating film 112. Third so as to overlap the contact hole 113
A transparent conductive film is deposited on the insulating film 112 of the pixel electrode 1
14 is formed, the alignment film 115 is applied over the entire surface of the substrate 101 in this state, and a rubbing process is performed, so that the substrate 122 is manufactured.

On the other hand, the counter substrate 123 is an insulating substrate 121.
After forming a color filter 120 if necessary, a transparent conductive film is deposited on the entire surface to form a counter electrode 118, a counter substrate side alignment film 117 is applied, and a rubbing process is performed.

After that, the active matrix substrate 122
Liquid crystal is injected into the liquid crystal layer 116 by sticking the counter substrate 123 to the counter substrate 123. As a result, a liquid crystal display device is manufactured.

In the active matrix type liquid crystal display device manufactured as described above, the reason why the drain electrode / light-shielding film 108 and the light-shielding film 110 are provided along the gate wiring 102 is as follows. When the resolution is increased, the interval between adjacent pixels becomes smaller. Therefore, when 1H driving is performed to invert the polarity of the signal written to the pixel electrode for each scanning line, an interaction occurs between the adjacent pixel electrodes on the scanning line. The electric field is disturbed. As a result, the liquid crystal molecules are disturbed, and in the case of normally white, light leakage occurs when displaying black and the contrast deteriorates. A light-shielding film is provided to prevent this reduction in contrast.

On the other hand, there is also a method of forming a light shielding film on the source wiring side which is a signal line on the active matrix substrate.
(M.Tumura et al., "High-Resolution 10.3-in.-Diagona
l Multicolor TFT-LCD "SID 91 DIGEST, pp215-218).
In the case of this method, when the 1V inversion drive that inverts the polarity of the signal to be written in the pixel electrode for each signal line is surely performed, light leakage due to the disturbance of the electric field generated on the signal line is blocked, so that the contrast is deteriorated. Can be prevented. However, as described above, at the time of 1H inversion driving, the electric field is disturbed on the scanning line to cause light leakage. Therefore, this method cannot prevent the contrast from being lowered. Further, in the 1V inversion drive, it is not possible to drive the counter substrate side to assist writing in the pixel, so that the load on the drive IC becomes large.

[0018]

As can be seen from FIGS. 13 and 14, in the conventional display device, the light shielding film 110 and the gate wiring 102 are provided between the drain electrode / light shielding film 108 and the gate wiring 102. Or pixel electrode 114
Since a parasitic capacitance is generated between the gate wiring 102 and the gate wiring 102, display characteristics are deteriorated. The magnitude of the influence of this parasitic capacitance on the display characteristics is (parasitic capacitance) / (liquid crystal capacitance + storage capacitance +
It is expressed by the value of the ratio of (parasitic capacitance). Since the conventional display device has no storage capacitance, the parasitic capacitance has a large effect on the display characteristics. However, if an attempt is made to attach a storage capacitor to each pixel in order to solve this problem, the storage capacitor wiring and the like have to be formed, so that the aperture ratio decreases. Further, if the storage capacitor wiring is formed of a transparent conductor in order to prevent the reduction of the aperture ratio, there is a problem that the yield is reduced because the number of steps is increased.

The present invention solves the problems of the prior art as described above, does not lower the aperture ratio, can prevent the yield from lowering due to the increase in the number of processes, and can improve the display characteristics. An object is to provide an active matrix liquid crystal display device.

[0020]

In the active matrix type liquid crystal display device of the present invention, signal lines and scanning lines are arranged in a grid pattern on an insulating substrate that transmits light or a transparent substrate coated with a transparent insulating film. A pixel electrode is formed in a region surrounded by adjacent signal lines and adjacent scanning lines, and a switching element for transmitting a signal sent to the signal line to the pixel electrode is formed. An active matrix liquid crystal in which a counter substrate is opposed to an active matrix substrate whose liquid crystal is sandwiched between the active matrix substrates which are on / off controlled by the scanning lines on the downstream side in the sending direction of the signal sent to the signal line among the adjacent scan lines. A display device, which covers, on the active matrix substrate, a gap between a scanning line on the downstream side in the feed direction and a downstream pixel electrode adjacent to the pixel electrode with the scanning line interposed therebetween. A light-shielding film made of metal is formed so as to be electrically connected to the scanning line in a state of overlapping with the scanning line and the peripheral portion of the downstream-side pixel electrode along the scanning line. The overlapping portion with is used as a storage capacitor electrode, and is electrically connected to the counter electrode formed on the liquid crystal side of the counter substrate via the scanning line, whereby the above object is achieved.

In addition to the light-shielding film, a second light-shielding film also serves as a drain electrode of the switching element along a scanning line on the downstream side in the feed direction and on a peripheral portion of an upstream pixel electrode sandwiching the scanning line. Alternatively, it may be formed separately from the drain electrode.

The light-shielding film and the second light-shielding film formed in the same pixel may be electrically connected.

The means for connecting the light-shielding film and the second light-shielding film may be composed of a portion extending from either one of the light-shielding films. Alternatively, it may be composed of a transparent conductive connecting piece other than the both light-shielding films.

The light-shielding film is a peripheral portion of the same pixel electrode, passes near the signal line sandwiched by the adjacent scan lines, and is a scan line downstream of the adjacent scan lines sandwiching the pixel electrode. It may be formed so as to extend to a portion along the line.

The light-shielding film and / or the second light-shielding film may be made of the same material as the signal line.

A counter substrate side light shielding film is also formed on the counter substrate, and the counter substrate side light shielding film is a gap between the light shielding film on the active matrix substrate side and the scanning line and / or a second film on the active matrix substrate side. It may be formed so as to cover the gap between the light shielding film and the scanning line.

[0027]

The light-shielding film formed so as to overlap the pixel electrode and the gate wiring adjacent thereto is connected to the counter electrode on the counter substrate side via the gate wiring. Therefore, a part of the parasitic capacitance generated between the light shielding film and the gate wiring, between the pixel electrode and the gate wiring, and the like is connected in parallel to the capacitance of the liquid crystal and can be used as a storage capacitance. Therefore, the denominator becomes large and the magnitude of the influence of the parasitic capacitance on the display characteristics becomes small.

[0028]

EXAMPLES Examples of the present invention will be described below.

<First Embodiment> FIG. 1 is a plan view showing an active matrix substrate of an active matrix type liquid crystal display device of this embodiment, and FIG. 2 is a sectional view taken along the line CC 'of FIG.

In this active matrix type liquid crystal display device, a counter substrate is arranged opposite to an active matrix substrate having TFTs 24 formed in a matrix, and a liquid crystal layer is sandwiched between both substrates.

In this active matrix substrate, a gate wiring 2 as a scanning line which is long in the lateral direction is formed on a glass substrate 1 as an insulating substrate which is the lowermost layer, and a TFT 24 is branched from the gate wiring 2 to form a TFT 24. Gate electrode 2a is formed.

The glass substrate 1 on which the gate wiring 2 and the gate electrode 2a are formed is coated with SiN _x to form a first layer.
Is formed on the first insulating film 3, and an a-Si layer is further laminated on the first insulating film 3 so as to cover the formation position of the gate electrode 2a, and SiN _x is deposited thereon to form the second insulating film. The film 5 is formed. On the glass substrate 1 in such a state,
A source wire 7 as a signal line is formed in the vertical direction by depositing metal, and a source electrode 7a of the TFT 24 is formed branching from the source wire 7. This source electrode 7a
Partially overlaps the left side portion of the gate electrode 2a, and the drain electrode 9 of the TFT 24 is formed on the right side portion of the gate electrode 2a. A light shielding film 10b is formed further to the right of the drain electrode 9 so as to partially overlap the gate wiring 2. Another light-shielding film 10a is formed on the opposite side of the light-shielding film 10b with the gate wiring 2 interposed therebetween so as to partially overlap the gate wiring 2.

Further, on the glass substrate 1 in this state,
A third insulating film 12 partially having a contact hole 13 is formed on almost the entire surface. This third insulating film 1
A pixel electrode 14 is formed on the second electrode 2 by depositing ITO so as to contact the portion corresponding to the drain electrode through the contact hole 13, and an alignment film is further formed thereon.

The counter substrate arranged to face the active matrix substrate has the same structure as the conventional example.

Next, a method of manufacturing the active matrix type liquid crystal display device having such a structure will be described with reference to FIG.

First, as shown in FIG. 3A, a Ta film is formed on the glass substrate 1 to have a thickness of, for example, 3000 Å, and then patterned to form the gate wiring 2 and the gate electrode 2a.

Next, the gate wiring 2 and the gate electrode 2
A SiN _x film to be the first insulating film 3 is deposited to a thickness of, for example, 3000 angstroms on the entire surface of the glass substrate 1 having been subjected to a by sputtering or a plasma CVD method to sequentially form TFT 24 layers, for example, 300
Angstrom thick a-Si layer, second insulating film 5
For example, Si having a thickness of 2000 angstroms
After the N _x film is continuously deposited over the entire surface, the second insulating film 5 is formed into a pattern as shown in FIG. 1B by etching. Here, the gate wiring 2 and the gate electrode 2a may be anodized to form an insulating film before depositing the first insulating film 3, or SiN may be used as the insulating film.
Materials other than _x may be used.

Next, P-doped a-Si is deposited over the entire surface by plasma CVD to a thickness of, for example, 500 angstrom, and then patterned by a-.
A Si layer is formed, and a Mo layer is deposited by sputtering to have a thickness of, for example, 2000 angstrom. Then, the Mo layer is patterned by etching as shown in FIG. The electrode 7a and the drain electrode 9 are formed.

Next, a Cr layer is formed by sputtering.
For example, after applying a thickness of 1000 Å,
By etching the Cr layer into a pattern as shown in FIG. 1C, the light shielding films 10a and 10b are formed.

Finally, an organic protective film having a thickness of, for example, 1 μm is deposited on the entire surface of the glass substrate 1 having the above structure to form the third insulating film 12, and the contact hole 13 is used as the third insulating film 12. Is formed by etching on the third insulating film 12, and ITO of 1000 angstrom, for example, is deposited by sputtering on the third insulating film 12 so as to overlap the contact hole 13 and the light shielding films 10a and 10b, and then the pixel electrode 14 is formed by etching. By forming, the active matrix substrate of this embodiment is obtained.

Here, as the organic protective film which becomes the third insulating film 12, an acrylic resin such as JSS-7215 manufactured by Japan Synthetic Rubber, a polyimide film such as PIX-8803 manufactured by Hitachi Chemical, or 5414 manufactured by Toray. A photosensitive polyimide film or the like can be used. In addition to the organic film,
An inorganic film such as SiN _x or SiO ₂ may be used.

The light-shielding films 10a and 10b can be simplified by forming the source wiring 7 and the source electrode 7a by using a source wiring metal.

The counter substrate is manufactured in the same manner as in the conventional example, and then the active matrix substrate and the counter substrate are bonded to each other to inject liquid crystal into the liquid crystal layer. As a result, the active matrix type liquid crystal display device of this embodiment is manufactured.

During the fabrication, each gate wiring 2 is electrically connected to the counter electrode on the counter substrate side. As the connection structure, for example, the end portion of the gate wiring 2 is connected by a single wiring, and the terminal provided at the end portion of the wiring and the terminal provided at the counter electrode are connected by a wire. ..
It is optional to take other structures.

Therefore, the active matrix type liquid crystal display device thus manufactured has the following actions. Here, the pixel located in the center of FIG.
The -1) th pixel and the pixel above it are the Nth pixel.

The light-shielding film 10a formed so as to overlap the N-th pixel electrode 14 and the (N-1) -th gate wiring 2 adjacent thereto is provided on the counter electrode on the counter substrate side via the gate wiring 2. It is connected. Therefore, a part of the parasitic capacitance generated between the pixel electrode 14 and the light-shielding film 10a, between the pixel electrode 14 and the gate wiring 2, which is the shaded portion in FIG. 1, is connected in parallel with the liquid crystal capacitance. , Available as storage capacity. Therefore, the magnitude of the influence of the above-mentioned parasitic capacitance on the display characteristics is small because the denominator of the equation is large, and the display characteristics can be improved. Further, since it is not necessary to separately form the storage capacitor wiring, it is possible to prevent the aperture ratio from being lowered and to prevent the yield from being lowered due to the increase in the number of steps.

<Second Embodiment> FIG. 4 is a plan view showing an active matrix substrate of an active matrix type liquid crystal display device of this embodiment, and FIG. 5 is a sectional view taken along the line CC 'of FIG. Here, it is assumed that the pixel located in the center of FIG. 4 is the (N-1) th pixel and the pixel above it is the Nth pixel.
The parts having the same functions as those in the first embodiment are designated by the same reference numerals as those in FIG.

In the active matrix type liquid crystal display device of this embodiment, the drain electrode 9 and the light shielding film 10b of the active matrix substrate which are separately provided in the first embodiment are provided.
It has an integrated drain electrode / light-shielding film 8, and the other structure is similar to that of the first embodiment. Regarding the manufacturing method, in the first embodiment, when the drain electrode 9 is formed by etching the Mo layer, the drain electrode / light-shielding film 8 is formed in a pattern as shown in FIG. Except that the film 10 is formed in the pattern shown.
This is similar to the manufacturing method of the first embodiment.

Therefore, the active matrix type liquid crystal display device thus manufactured has the following actions. The light-shielding film 10 formed so as to overlap the Nth pixel electrode 14 and the (N-1) th gate wiring 2 adjacent thereto is connected to the counter electrode on the counter substrate side via the gate wiring 2. There is. Therefore, a part of the parasitic capacitance generated between the pixel electrode 14 and the light-shielding film 10, between the pixel electrode 14 and the gate wiring 2, which corresponds to the shaded portion in FIG. 4, is connected in parallel with the capacitance of the liquid crystal and accumulated. Since it can be used as a capacity, the same effect as that of the first embodiment can be obtained. In addition, the drain electrode 9 in the first embodiment
Since the drain electrode / light-shielding film 8 is formed so as to eliminate the gap between the light-shielding film 10b and the light-shielding film 10b, it is possible to further prevent a decrease in contrast due to light leakage.

<Third Embodiment> FIG. 6 is a plan view showing an active matrix substrate of an active matrix type liquid crystal display device of this embodiment, and FIG. 7 is a sectional view taken along the line CC 'of FIG. Here, it is assumed that the pixel located in the center of FIG. 6 is the (N-1) th pixel and the pixel above it is the Nth pixel.
The parts having the same functions as those of the second embodiment are given the same numbers as in FIG.

In addition to the second embodiment, the active matrix type liquid crystal display device of the present embodiment has a transparent conductive connecting piece 11 for connecting the drain electrode / light shielding film 8 and the light shielding film 10 of the active matrix substrate. The other structure is the same as that of the second embodiment. The connection piece 11 functions as a drain electrode wiring. Regarding the manufacturing method as well, in the second embodiment, after forming the light-shielding film 10, an ITO layer is deposited by sputtering to a thickness of 1000 Å, and then etching is performed to form a connecting piece having a pattern as shown in FIG. 11 to form a third on it
The manufacturing method is the same as that of the second embodiment except that the insulating film 12 is formed.

Therefore, in the active matrix type liquid crystal display device manufactured as described above, a part of the parasitic capacitance generated between the pixel electrode 14 and the gate wiring 2 corresponding to the shaded portion in FIG. Connected in parallel,
It can be used as storage capacity. Further, since the light-shielding film 10 is connected to the pixel electrode 14 via the drain / light-shielding film 8, the parasitic capacitance is smaller than that in the first and second embodiments. Therefore, although the portion using the parasitic capacitance as the storage capacitance is smaller than that in the first and second embodiments, the size of the parasitic capacitance itself is small, and as a result, an image with good display quality can be obtained.

Further, as shown in FIGS. 8A and 8B, the drain electrode / light-shielding film 8 and the light-shielding film 10 are formed, and a portion extending from one light-shielding film serves as the other light-shielding film. It may be configured to be electrically connected, or as shown in FIG. 8C, a light-shielding film may be integrally formed on three peripheral portions of the peripheral portion of the pixel electrode including both scanning lines. .. By doing so, the manufacturing process can be simplified.

<Fourth Embodiment> FIG. 9 is a plan view showing an active matrix type liquid crystal display device of this embodiment.
Reference numeral 0 is a sectional view taken along the line CC ′ of FIG. 9. The parts having the same functions as those of the second embodiment are given the same numbers as in FIG.

In this active matrix type liquid crystal display device, a counter substrate 23 is disposed so as to face an active matrix substrate 22 having TFTs 24 formed in a matrix, and a liquid crystal layer 16 is sandwiched between the two substrates 22 and 23. It is composed.

Active matrix substrate 22 of this embodiment
Is an active matrix substrate which has a structure similar to that of the second embodiment, but in which the drain electrode / light-shielding film 8 is formed so as to have a gap with the gate wiring 2.

On the other hand, the counter substrate 23 arranged to face the active matrix substrate 22 is provided with the counter substrate side light shielding film 19 on the glass substrate 21 as an insulating substrate. The counter substrate side light shielding film 19 is It is formed so as to cover the gap. Further, a color filter 20 is formed so as to face the pixel electrode 14 of the active matrix substrate 22, and an alignment film 15 is formed thereon. The color filter may be omitted if unnecessary.

Next, a method of manufacturing the active matrix type liquid crystal display device having such a structure will be described.

The active matrix substrate 22 is the same as that of the second embodiment and is as described above.

In the counter substrate 23, first, the counter substrate side light-shielding film 19 is formed on the glass substrate 21 in a pattern as shown in FIG. 11, and ITO serving as the counter electrode 18 is deposited on the entire surface thereof. Then, polyimide is deposited on the entire surface to form the counter substrate side alignment film 17, and the alignment film 17 is rubbed. Further, if necessary, a color-filled film 20 is formed in a portion facing the pixel electrode 14.

Finally, the active matrix substrate 22 and the counter substrate 23 are bonded together, and liquid crystal is injected between the two substrates 22 and 23 to form the liquid crystal layer 16.

Therefore, in the active matrix type display device thus manufactured, in addition to the effect obtained by using the parasitic capacitance as the storage capacitance, the light leakage from the gate wiring as the scanning line is completely blocked. By doing so, the effect of improving the display characteristics can be obtained.

In the present embodiment, the counter substrate side light-shielding film 1
9 is provided so as to block the gap between the drain electrode / light-shielding film 8 and the gate wiring 2, but is opposed so as to fill the gap between the drain electrode 2 and the light-shielding film 10 as shown in a and b of FIG. 9, for example. The substrate-side light-shielding film 19 may be provided.

However, in any of the embodiments, the structure of the active matrix type liquid crystal display device is not limited to the above embodiments, and the manufacturing method is not limited to the above embodiments.

[0065]

As is apparent from the above description, according to the active matrix type liquid crystal device of the present invention, it is possible to prevent the yield ratio from being lowered due to the increase in the number of steps without lowering the aperture ratio, and the display characteristics. Can be improved.

[Brief description of drawings]

FIG. 1 is a plan view showing an active matrix substrate of an active matrix type liquid crystal display device of a first embodiment.

FIG. 2 is a cross-sectional view taken along the line C-C ′ of FIG.

3A to 3D are views showing a manufacturing process of the active matrix substrate of FIG.

FIG. 4 is a plan view showing an active matrix substrate of an active matrix liquid crystal display device of a second embodiment.

5 is a cross-sectional view taken along the line C-C ′ of FIG.

FIG. 6 is a plan view showing an active matrix substrate of an active matrix type liquid crystal display device of a third embodiment.

7 is a cross-sectional view taken along the line C-C ′ of FIG.

FIG. 8 is a plan view showing an application example of an active matrix substrate of an active matrix type liquid crystal display device of a third embodiment.

FIG. 9 is a plan view showing an active matrix liquid crystal display device of a fourth embodiment.

10 is a cross-sectional view taken along the line C-C ′ of FIG.

11 is a diagram showing a pattern of a light-shielding film on the counter substrate side of the active matrix liquid crystal display device of FIG.

FIG. 12 is a plan view showing an example of a conventional active matrix type liquid crystal display device of a TFT system.

13 is a cross-sectional view taken along the line A-A ′ of FIG.

14 is a cross-sectional view taken along the line B-B ′ of FIG.

[Explanation of symbols]

 1 Glass Substrate 2 Gate Wiring 2a Gate Electrode 3 First Insulating Film 5 Second Insulating Film 7 Source Wiring 7a Source Electrode 8 Drain Electrode / Light Shielding Film 9 Drain Electrodes 10, 10a, 10b Light Shielding Film 11 Drain Electrode Wiring 12 Third Insulating film 13 Contact hole 14 Pixel electrode 15 Alignment film 16 Liquid crystal layer 17 Counter substrate side alignment film 19 Counter substrate side light shielding film 18 Counter electrode 20 Color filter 21 Glass substrate 22 Active matrix substrate 23 Counter substrate 24 TFT

Claims (8)

[Claims] 1. A signal line and a scanning line are wired vertically and horizontally on an insulating substrate which transmits light or a transparent substrate coated with a transparent insulating film so as to form a grid pattern, and adjacent signal lines are adjacent to each other. A pixel electrode is formed in a region surrounded by matching scan lines, and a switching element that transmits a signal sent to the signal line to the pixel electrode is sent by a switching element that is sent to a signal line of the adjacent scan lines. An active matrix type liquid crystal display device in which a counter substrate is arranged to face an active matrix substrate which is on / off controlled by a scanning line on the downstream side with a liquid crystal interposed therebetween. A state in which the gap between the scanning line on the downstream side in the direction and the downstream pixel electrode adjacent to the pixel electrode sandwiching the scanning line is covered and overlapped with the peripheral edge of the scanning line and the downstream pixel electrode along the scanning line. ,
A light-shielding film made of metal is formed so as to be electrically connected to the scan line, and the light-shielding film is used on the liquid crystal side of the counter substrate while the overlapping portion with the downstream pixel electrode is used as a storage capacitor electrode. Active-matrix liquid crystal display device electrically connected to the opposite electrode formed through the scanning line. 2. In addition to the light-shielding film, a second light-shielding film is provided along a scanning line on the downstream side in the feeding direction, and a drain electrode of the switching element is provided on a peripheral portion of an upstream pixel electrode sandwiching the scanning line. The active matrix liquid crystal display device according to claim 1, which is also formed separately or separately from the drain electrode. 3. The active matrix type liquid crystal display device according to claim 2, wherein the light-shielding film and the second light-shielding film formed in the same pixel are electrically connected. 4. The active matrix liquid crystal display device according to claim 3, wherein the means for connecting the light-shielding film and the second light-shielding film comprises a portion extending from one of the light-shielding films. 5. The active matrix type liquid crystal display device according to claim 3, wherein the means for connecting the light-shielding film and the second light-shielding film comprises a transparent conductive connecting piece different from the both light-shielding films. .. 6. The light-shielding film passes through a peripheral portion of the same pixel electrode, near a signal line sandwiched by the adjacent scanning lines, and on a downstream side of the adjacent scanning lines sandwiching the pixel electrode. The active matrix liquid crystal display device according to claim 1, wherein the active matrix liquid crystal display device is formed so as to extend to a portion along a scanning line. 7. The active matrix type liquid crystal display device according to claim 2, wherein the light-shielding film and / or the second light-shielding film is formed of the same material as the signal line. 8. A counter substrate-side light-shielding film is also formed on the counter substrate, and the counter-substrate-side light-shielding film has a gap between the light-shielding film on the active matrix substrate side and the scanning line and / or a first light-shielding film on the active matrix substrate side. 8. The active matrix liquid crystal display device according to claim 1, wherein the active matrix liquid crystal display device is formed so as to cover a gap between the light shielding film 2 and the scanning line.