JPH0529650A - Optical device - Google Patents
Optical deviceInfo
- Publication number
- JPH0529650A JPH0529650A JP3179593A JP17959391A JPH0529650A JP H0529650 A JPH0529650 A JP H0529650A JP 3179593 A JP3179593 A JP 3179593A JP 17959391 A JP17959391 A JP 17959391A JP H0529650 A JPH0529650 A JP H0529650A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- case
- light emitting
- recess
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は光学装置に関し、特に発
光チップまたは受光チップを搭載するための凹部を有す
る樹脂ケースを備え、前記凹部を含む樹脂ケースに立体
的に金属メッキ配線を施し、前記凹部の金属メッキ配線
上に前記発光チップまたは受光チップが載置、樹脂封止
されてなる光学装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical device, and more particularly to a resin case having a recess for mounting a light emitting chip or a light receiving chip, and the resin case including the recess is three-dimensionally metal-plated wiring, The present invention relates to an optical device in which the light emitting chip or the light receiving chip is placed on a metal-plated wiring in a recess and resin-sealed.
【０００２】[0002]
【従来の技術】従来の技術について、図７乃至図１０を
参照して説明する。2. Description of the Related Art A conventional technique will be described with reference to FIGS.
【０００３】ここでは、立体的なケースに金属メッキに
よる配線を施したフレームレス構造の受発光素子及び反
射型フォトインタラプタ（以下、それぞれ単に受発光素
子または反射型フォトインタラプタと記す）について説
明する。Here, a light emitting / receiving element and a reflection type photo interrupter (hereinafter, simply referred to as a light receiving / emitting element or a reflection type photo interrupter) having a frameless structure in which wiring is formed by metal plating on a three-dimensional case will be described.
【０００４】図７（ａ）は従来例による樹脂注入前の発
光素子の平面図、図７（ｂ）は図７（ａ）のＡ−Ａ’線
断面図、図８（ａ）及び（ｂ）は図７（ａ）及び（ｂ）
に示す発光素子の樹脂注入過程図である。ここでは発光
素子について説明するが、受光素子についても同様の構
造である。FIG. 7A is a plan view of a conventional light emitting device before resin injection, FIG. 7B is a sectional view taken along the line AA 'of FIG. 7A, and FIGS. 8A and 8B. ) Is shown in FIGS. 7 (a) and 7 (b).
FIG. 6 is a resin injection process diagram of the light emitting element shown in FIG. Although the light emitting element will be described here, the light receiving element has the same structure.
【０００５】従来の発光素子は、図７（ａ）及び（ｂ）
に示すように、金属メッキによる導体配線１を有する立
体的な樹脂ケース２の凹部２’の中に半導体チップ３を
導電性接着剤４によって接着し、次にワイヤー５による
ワイヤーボンディングにより半導体チップ３上の電極と
ケース２上の電極を接続し、更に図８（ａ）に示すよう
に樹脂６をケース２に注入し、その後図８（ｂ）に示す
ように樹脂６を硬化し封止を行っていた。A conventional light emitting device is shown in FIGS. 7 (a) and 7 (b).
As shown in FIG. 3, the semiconductor chip 3 is bonded by the conductive adhesive 4 in the recess 2 ′ of the three-dimensional resin case 2 having the conductor wiring 1 formed by metal plating, and then the semiconductor chip 3 is wire-bonded by the wire 5. The upper electrode and the electrode on the case 2 are connected to each other, and the resin 6 is injected into the case 2 as shown in FIG. 8A, and then the resin 6 is cured and sealed as shown in FIG. 8B. I was going.
【０００６】ここで、ケース２の天面部の導体配線１が
施された箇所と施されていない箇所では、導体配線１の
金属メッキ厚分の段差が生じ、この段差部を伝って樹脂
流出が発生しやすいという問題点があった。これに対す
る対策を施した他の従来例による発光素子について、以
下説明する。Here, a difference in the thickness of the metal plating of the conductor wiring 1 occurs between the portion of the top surface of the case 2 where the conductor wiring 1 is formed and the portion where the conductor wiring 1 is not formed. There was a problem that it was likely to occur. Another conventional light emitting device that takes measures against this will be described below.
【０００７】図９は他の従来例による樹脂注入前の発光
素子の断面図、図１０（ａ）及び（ｂ）は図９の発光素
子の樹脂注入過程図である。FIG. 9 is a sectional view of a light emitting device before resin injection according to another conventional example, and FIGS. 10A and 10B are resin injection process diagrams of the light emitting device of FIG.
【０００８】図９に示す様にケース２天面の全面にコー
ティング材７を塗布し、ケース天面部の高さを揃えるこ
とにより導体配線１の端部の段差部からの樹脂６の流出
を防止できる構造とし、以下図７及び図８の従来例と同
様の工程を行なう。即ち、ケース２中に半導体チップ３
を接続し、次にワイヤー５のワイヤーボンディングによ
り半導体チップ３上の電極とケース２上の電極を接続
し、更に図１０（ａ）に示すように樹脂６をケース２に
注入し、その後図１０（ｂ）に示すように樹脂６を硬化
し封止を行っていた。As shown in FIG. 9, the coating material 7 is applied to the entire top surface of the case 2 so that the height of the top surface of the case is made uniform to prevent the resin 6 from flowing out from the stepped portion at the end of the conductor wiring 1. Then, the steps similar to those of the conventional example shown in FIGS. 7 and 8 are performed. That is, the semiconductor chip 3 in the case 2
Then, the electrode on the semiconductor chip 3 and the electrode on the case 2 are connected by wire bonding of the wire 5, and the resin 6 is injected into the case 2 as shown in FIG. As shown in (b), the resin 6 was cured and sealed.
【０００９】ここで、コーティング材７には、注入する
樹脂６をはじく効果の無いものが使われていた。Here, as the coating material 7, a material having no effect of repelling the injected resin 6 was used.
【００１０】図１１（ａ）は従来例による反射型フォト
インタラプタの平面図、図１１（ｂ）は図１１（ａ）の
Ｂ−Ｂ’線断面図、図１２（ａ）及び（ｂ）は図１１
（ａ）及び（ｂ）の反射型フォトインタラプタの樹脂注
入過程図である。FIG. 11A is a plan view of a conventional reflective photo interrupter, FIG. 11B is a sectional view taken along the line BB 'of FIG. 11A, and FIGS. Figure 11
It is a resin injection process figure of the reflection type photo interrupter of (a) and (b).
【００１１】従来の反射型フォトインタラプタは、図１
１（ａ）及び（ｂ）に示すように金属メッキによる導体
配線１１を有する立体的な凹型ケース１２の発光チップ
搭載用凹部１７及び受光チップ搭載用凹部１８のそれぞ
れに、発光チップ１３及び受光チップ１９を導電性接着
剤１４によって接着し、次にワイヤー１５によるワイヤ
ーボンディングにより発光チップ１３及び受光チップ１
９上の電極とケース１２上の電極とを接続し、更に図１
２（ａ）に示すように樹脂６をケース１２に注入し、そ
の後図１２（ｂ）に示すように樹脂６を硬化し封止を行
っていた。The conventional reflective photo interrupter is shown in FIG.
1A and 1B, the light emitting chip 13 and the light receiving chip are mounted in the light emitting chip mounting recess 17 and the light receiving chip mounting recess 17 of the three-dimensional recessed case 12 having the conductor wiring 11 formed by metal plating, respectively. 19 is bonded by a conductive adhesive 14, and then the light emitting chip 13 and the light receiving chip 1 are bonded by wire bonding with a wire 15.
9 and the electrode on the case 12 are connected to each other.
The resin 6 was injected into the case 12 as shown in FIG. 2 (a), and then the resin 6 was cured and sealed as shown in FIG. 12 (b).
【００１２】[0012]
【発明が解決しようとする課題】ところで、前述の図７
乃至図１０に示した従来の発光素子においては以下のよ
うな問題点があった。By the way, the above-mentioned FIG.
The conventional light emitting device shown in FIG. 10 has the following problems.
【００１３】即ち、ケース２に注入された樹脂６は硬化
時に収縮を起こすため体積が減少し、図８（ｂ）及び図
１０（ｂ）に示すように樹脂６の表面が凹状にへこんだ
形状となる。この結果、発光チップ３からの放射光が樹
脂６表面の凹レンズ効果により分散され発光輝度が低下
してしまう。That is, since the resin 6 injected into the case 2 contracts during curing, the volume is reduced, and the surface of the resin 6 is recessed as shown in FIGS. 8 (b) and 10 (b). Becomes As a result, the radiated light from the light emitting chip 3 is dispersed by the concave lens effect on the surface of the resin 6 and the emission brightness is reduced.
【００１４】また、図１１及び図１２に示したフォトイ
ンタラプタについても同様の問題がある。即ち、図１２
（ｂ）に示すように樹脂６が硬化時に収縮し、表面が凹
状にへこむ。このため、発光チップ１３からの放射光が
樹脂６表面の凹レンズ効果で分散され発光輝度が低下し
てしまう。The photo interrupter shown in FIGS. 11 and 12 also has the same problem. That is, FIG.
As shown in (b), the resin 6 contracts during curing, and the surface is dented. For this reason, the emitted light from the light emitting chip 13 is dispersed by the concave lens effect on the surface of the resin 6, and the emission brightness is reduced.
【００１５】また外部より受光チップ１９に入射する光
も樹脂６表面の凹レンズ効果により分散されるため、受
光チップ１９にまで到達する光の強度が低下してしま
う。Further, since the light incident on the light receiving chip 19 from the outside is also dispersed by the concave lens effect on the surface of the resin 6, the intensity of the light reaching the light receiving chip 19 is lowered.
【００１６】そこで、フレームレス構造の発光素子及び
反射型フォトインタラプタにおいて、樹脂６の表面が凹
状にへこまないようにするには、樹脂注入時に熱硬化時
の収縮分を見込んで樹脂６を多めに注入する必要があ
る。Therefore, in the frameless structure of the light emitting element and the reflection type photo interrupter, in order to prevent the surface of the resin 6 from being depressed, a large amount of the resin 6 should be included in consideration of the shrinkage during thermosetting at the time of resin injection. Need to be injected.
【００１７】ところが、高粘度の樹脂を使用しても、樹
脂注入時は樹脂６の表面張力が大きいため、ある注入量
の範囲内ならばケース２または１２上に凸状に盛り上げ
ることができるが、熱硬化時には温度上昇により樹脂粘
度が大きく低下するので、結局樹脂６がケース外へ流出
してしまう。However, even if a high-viscosity resin is used, the surface tension of the resin 6 is large when the resin is injected, so that it can be raised in a convex shape on the case 2 or 12 within a certain injection amount range. At the time of heat curing, the resin viscosity greatly decreases due to the temperature rise, so that the resin 6 eventually flows out of the case.
【００１８】このように従来は、熱硬化後の樹脂表面形
状を平面または凸状にすることが不可能であった。As described above, conventionally, it has been impossible to make the surface shape of the resin after thermosetting flat or convex.
【００１９】さらに、前述のように樹脂６をケース２，
１２上に凸状に盛り上げた場合は、熱硬化時にケース外
部へ流出した樹脂６が半田付用端子に付着し、半田付性
を妨げるという問題がある。また、フォトインタラプタ
の場合、発光チップ搭載用凹部１７と受光チップ搭載用
凹部１８とが隣接しているため、注入した樹脂６が受発
光凹部間でつながり、発光チップ１３からの光が受光チ
ップ１９にリークするという問題がある。Further, as described above, the resin 6 is attached to the case 2,
When the protrusions 12 are raised in a convex shape, there is a problem in that the resin 6 flowing out of the case during thermosetting adheres to the soldering terminals and hinders solderability. Further, in the case of the photo interrupter, since the light emitting chip mounting recess 17 and the light receiving chip mounting recess 18 are adjacent to each other, the injected resin 6 is connected between the light receiving and emitting recesses, and the light from the light emitting chip 13 is received. There is a problem of leaking to.
【００２０】また、樹脂注入時において、発光素子の場
合、２ｍｍ3程度以下（フォトインタラプタの場合、受
発光チップのそれぞれの搭載用凹部がそれぞれ１．３〜
１．５ｍｍ3程度）の小さなケースに、ほぼケース体積
に等しい量の樹脂６を注入するので、注入装置の樹脂吐
出量がわずかにばらついても、そのばらついた量のケー
ス体積に対する割合が大きいため、樹脂表面形状が大き
く変化しやすい。このためケース体積が大きい場合に比
べ、樹脂６のケース外への流出が発生し易いという問題
があった。In the case of a light emitting element, when resin is injected, about 2 mm 3 or less (in the case of a photo interrupter, the mounting recesses of the light receiving and emitting chips are 1.3 to 3 mm, respectively).
The amount of resin 6 injected into a small case (about 1.5 mm 3 ) is approximately equal to the case volume. Therefore, even if the resin discharge amount of the injection device varies slightly, the ratio of the varied amount to the case volume is large. The resin surface shape is likely to change greatly. Therefore, there is a problem that the resin 6 is more likely to flow out of the case than when the case volume is large.
【００２１】上記対策として、熱硬化時の高温でも粘度
が高く樹脂流出が発生しない樹脂を使用する方法もある
が、この場合は高粘度のためケース２，１２への注型時
間が非常に長くなり、製造効率が低下すると共に、注型
時気泡を巻き込み易く、信頼性が低下するという問題が
あった。As a countermeasure for the above, there is a method of using a resin which has a high viscosity even at a high temperature during thermosetting and does not cause resin outflow, but in this case, the casting time to cases 2 and 12 is very long because of the high viscosity. Therefore, there is a problem that the manufacturing efficiency is lowered, bubbles are easily caught in the casting, and the reliability is lowered.
【００２２】そこで本発明の目的は、立体的なケースに
金属メッキによる配線を施したフレームレス構造の受発
光素子及び反射型フォトインタラプタ等の光学装置にお
いて、上述したような問題点を解消した光学装置を提供
することにある。Therefore, an object of the present invention is to solve the above-mentioned problems in an optical device such as a frameless structure light receiving and emitting element in which a three-dimensional case is provided with wiring by metal plating and a reflection type photo interrupter. To provide a device.
【００２３】[0023]
【課題を解決するための手段】前記目的を達成するため
に本発明は、発光チップまたは受光チップを搭載するた
めの凹部を有する樹脂ケースを備え、前記凹部を含む樹
脂ケースに立体的に金属メッキ配線を施し、前記凹部の
金属メッキ配線上に前記発光チップまたは受光チップが
載置、樹脂封止されてなる光学装置において、前記凹部
の開口面に、前記封止用樹脂をはじくコーティング材を
施してなることを特徴とする。To achieve the above object, the present invention comprises a resin case having a recess for mounting a light emitting chip or a light receiving chip, and the resin case including the recess is three-dimensionally metal-plated. In an optical device in which wiring is provided and the light emitting chip or the light receiving chip is placed on the metal-plated wiring of the recess and resin-sealed, a coating material that repels the sealing resin is applied to the opening surface of the recess. It is characterized by
【００２４】ここで、前記封止用樹脂及びコーティング
材の組み合わせとして、例えば前記封止用樹脂にエポキ
シ系樹脂を、また前記コーティング材にシリコン系樹脂
を使用してなることを特徴とする。As a combination of the sealing resin and the coating material, for example, an epoxy resin is used as the sealing resin and a silicon resin is used as the coating material.
【００２５】また、前記光学装置において、前記封止用
樹脂の表面を開口面と平坦か、それ以上に盛り上がるよ
うに形成することを特徴とする。Further, in the above-mentioned optical device, the surface of the sealing resin is formed so as to be flat with the opening surface or to be raised more than that.
【００２６】[0026]
【作用】発光チップまたは受光チップを搭載するための
凹部を有する樹脂ケースを備え、前記凹部を含む樹脂ケ
ースに立体的に金属メッキ配線を施し、前記凹部の金属
メッキ配線上に前記発光チップまたは受光チップが載
置、樹脂封止されてなる光学装置において、前記凹部の
開口面の断面に、前記封止用樹脂をはじくコーティング
材を施してなるので、封止用樹脂を硬化時の収縮分を見
込んで、或いは注入装置の誤差によって凹部に凸状に盛
り上げるように注入しても、コーティング材によっては
じかれるのでケース外部には流出しない。A resin case having a recess for mounting a light emitting chip or a light receiving chip is provided, and metal plating wiring is three-dimensionally provided on the resin case including the recess, and the light emitting chip or the light receiving is provided on the metal plating wiring of the recess. In an optical device in which a chip is placed and resin-sealed, a cross-section of the opening surface of the recess is provided with a coating material that repels the sealing resin. Even if the liquid is poured into the concave portion in a convex shape due to an error in the filling device or due to an error in the filling device, it is repelled by the coating material and does not flow out of the case.
【００２７】従って、硬化後の封止用樹脂の表面を樹脂
ケースの凹部の開口部断面と平坦か、それ以上に盛り上
がるようにできるので、従来のように封止用樹脂の表面
が硬化後に凹状にへこみ、その表面の凹レンズ効果によ
って光が分散してしまうという現象を解消でき、発光輝
度や受光量を向上できる。Therefore, the surface of the sealing resin after curing can be made flat with the cross section of the opening of the recess of the resin case or raised more than that, so that the surface of the sealing resin is concave after curing as in the conventional case. It is possible to eliminate the phenomenon that the light is dispersed due to the dent and the concave lens effect on the surface, and it is possible to improve the light emission brightness and the light reception amount.
【００２８】さらに、ケース外部への封止用樹脂の流出
がないので樹脂が半田付用端子に付着し半田付性が妨げ
られることもなく歩留まりを向上できる。Further, since the sealing resin does not flow out of the case, the yield is improved without the resin adhering to the soldering terminals and hindering the solderability.
【００２９】また、反射型フォトインタラプタにおいて
は、受発光チップ間が流出した封止用樹脂によって光学
的に接続されることがないので、光リークが無く信頼性
を向上できる。Further, in the reflection type photo interrupter, since there is no optical connection between the light receiving and emitting chips due to the sealing resin flowing out, there is no light leakage and the reliability can be improved.
【００３０】また、封止用樹脂にエポキシ系樹脂を、コ
ーティング材にシリコン系樹脂を使用すれば、材料の入
手も容易であり有用な組み合わせである。If an epoxy resin is used as the sealing resin and a silicone resin is used as the coating material, the materials are easily available and a useful combination.
【００３１】[0031]
【実施例】本発明の一実施例について、図１及び図２を
参照して説明する。図１は本実施例による発光素子の断
面図、図２（ａ）及び（ｂ）は図１の発光素子の樹脂注
入過程図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view of a light emitting device according to this embodiment, and FIGS. 2A and 2B are resin injection process diagrams of the light emitting device of FIG.
【００３２】なお、受光素子の場合も同様である。ま
た、図７乃至図１０に示す従来例と同一機能部分には同
一記号を付している。The same applies to the case of the light receiving element. Further, the same functional parts as those of the conventional example shown in FIGS. 7 to 10 are designated by the same symbols.
【００３３】本実施例の発光素子は図１に示すように、
金属メッキにより配線導体１が形成された樹脂製のケー
ス２の凹部２’天面に例えばシリコーン系樹脂より成る
コーティング材８を形成する。As shown in FIG. 1, the light emitting device of this embodiment has
A coating material 8 made of, for example, silicone resin is formed on the top surface of the recess 2'of the resin case 2 on which the wiring conductor 1 is formed by metal plating.
【００３４】ここで、シリコーン系樹脂のコーティング
材８は後述する注入用の熱硬化性エポキシ樹脂６をはじ
く性質を有する材料である。The silicone resin coating material 8 is a material having a property of repelling the thermosetting epoxy resin 6 for injection, which will be described later.
【００３５】次に、ケース２の底面に例えばＧａＡｌＡ
ｓのＬＥＤチップ３をＡｇを含有する導電性エポキシ系
接着剤４で接着硬化する。その後例えばＡｕ製のワイヤ
ー５によりＬＥＤチップ３上の電極とケースの電極を接
続する。Next, on the bottom surface of the case 2, for example, GaAlA
The LED chip 3 of s is adhered and cured with a conductive epoxy adhesive 4 containing Ag. After that, the electrode on the LED chip 3 and the electrode of the case are connected by the wire 5 made of Au, for example.
【００３６】次に、図２（ａ）に示すように熱硬化性エ
ポキシ樹脂６を硬化収縮を見込んでケース２の容積より
約１０％多く凸型の形状に注入する。Next, as shown in FIG. 2A, the thermosetting epoxy resin 6 is injected into the convex shape by about 10% more than the volume of the case 2 in consideration of the curing shrinkage.
【００３７】次に１００〜１８０℃のオーブン中で２〜
１２時間加熱することにより、エポキシ樹脂の硬化を行
う。この時、硬化時の温度上昇により一旦樹脂粘度が低
下するため樹脂６がケース２の外へ流出し易くなるが、
ケース２の凹部２’天面がエポキシ樹脂をはじくコーテ
ィング材８で覆われているため、流出が起こらず凸型の
形状を保ったまま硬化反応が進む。硬化と同時に収縮が
起こるため最終的には図２（ｂ）に示すように注入樹脂
体積が約１０％減少し、樹脂６の表面の形状が平面とな
ったＬＥＤを得る。Next, in an oven at 100 to 180 ° C., 2 to
The epoxy resin is cured by heating for 12 hours. At this time, since the resin viscosity temporarily decreases due to the temperature rise during curing, the resin 6 easily flows out of the case 2,
Since the top surface of the recess 2 ′ of the case 2 is covered with the coating material 8 that repels the epoxy resin, the curing reaction proceeds while the outflow does not occur and the convex shape is maintained. Since shrinkage occurs at the same time as curing, finally, as shown in FIG. 2B, the volume of injected resin is reduced by about 10%, and an LED having a flat surface shape of the resin 6 is obtained.
【００３８】図３は本発明の他の実施例による発光素子
の樹脂硬化後の断面図である。FIG. 3 is a sectional view of a light emitting device according to another embodiment of the present invention after resin curing.
【００３９】図３に示すように、樹脂６の注入量をケー
ス容量の１０％以上で調整することによって硬化後の樹
脂６の表面形状を凸状に盛り上げることができる。この
形状によれば表面形状が平坦時に比べて、さらに発光輝
度を向上できる。As shown in FIG. 3, the surface shape of the cured resin 6 can be raised to a convex shape by adjusting the injection amount of the resin 6 at 10% or more of the case capacity. According to this shape, the emission brightness can be further improved as compared with the case where the surface shape is flat.
【００４０】図４及び図５は、本発明を反射型フォトイ
ンタラプタに適用した場合の実施例を示す。4 and 5 show an embodiment in which the present invention is applied to a reflection type photo interrupter.
【００４１】図４は本実施例による反射型フォトインタ
ラプタの断面図、図５（ａ）及び（ｂ）は図４の反射型
フォトインタラプタの樹脂注入過程図である。FIG. 4 is a sectional view of the reflective photo interrupter according to this embodiment, and FIGS. 5A and 5B are resin injection process diagrams of the reflective photo interrupter of FIG.
【００４２】なお、図１１及び図１２に示す従来例と同
一機能部分には同一記号を付している。The same functional parts as those of the conventional example shown in FIGS. 11 and 12 are designated by the same symbols.
【００４３】本実施例の反射型フォトインタラプタは、
図４に示すように金属メッキにより、配線導体１１が形
成された樹脂製のケース１２の天面に例えばシリコーン
系樹脂より成るコーティング材８を形成する。The reflection type photo interrupter of this embodiment is
As shown in FIG. 4, the coating material 8 made of, for example, silicone resin is formed on the top surface of the resin case 12 on which the wiring conductor 11 is formed by metal plating.
【００４４】ここで、シリコーン系樹脂のコーティング
材８は注入用の熱硬化性エポキシ樹脂６をはじく性質を
有する材料である。Here, the silicone resin coating material 8 is a material having a property of repelling the thermosetting epoxy resin 6 for injection.
【００４５】次に、ケース１２の底面にＧａＡｓのＬＥ
Ｄチップ１３及びＳｉのフォトトランジスタチップ１９
をＡｇを含有する導電性エポキシ系接着剤１４で接着硬
化する。その後、例えばＡｕ製のワイヤー５により、Ｌ
ＥＤチップ１３及びフォトトランジスタチップ１９上の
電極とケース１２上の電極を接続する。Next, LE of GaAs is formed on the bottom surface of the case 12.
D chip 13 and Si phototransistor chip 19
Is adhesively cured with a conductive epoxy adhesive 14 containing Ag. After that, for example, with the wire 5 made of Au, L
The electrodes on the ED chip 13 and the phototransistor chip 19 are connected to the electrodes on the case 12.
【００４６】次に、図５（ａ）に示すように熱硬化性エ
ポキシ樹脂６を硬化収縮を見込んで最終的に必要な樹脂
体積より１０％程度多く凸型の形状に注入する。Next, as shown in FIG. 5A, the thermosetting epoxy resin 6 is injected into the convex shape by about 10% more than the finally required resin volume in consideration of curing shrinkage.
【００４７】次に１００〜１８０℃のオーブン中で２〜
１２時間加熱することにより樹脂６の硬化を行う。硬化
時の温度上昇により一旦樹脂粘度が低下するため、樹脂
６がケース１２の外へ流出し易くなるが、ケース天面が
樹脂６をはじくコーティング材８で覆われているため、
流出が起こらず凸型の形状を保ったまま硬化反応が進
む。硬化と同時に収縮が起こるため最終的には注入樹脂
体積が１０％程度減少し、図５（ｂ）に示すように樹脂
表面形状が平面となったフォトインタラプタが得られ
る。Then, in an oven at 100 to 180 ° C.
The resin 6 is cured by heating for 12 hours. Since the resin viscosity temporarily decreases due to the temperature rise during curing, the resin 6 easily flows out of the case 12, but the top surface of the case is covered with the coating material 8 that repels the resin 6.
The curing reaction proceeds while maintaining the convex shape without any outflow. Since the shrinkage occurs at the same time as the curing, the volume of the injected resin finally decreases by about 10%, and a photointerrupter having a flat resin surface shape as shown in FIG. 5B is obtained.
【００４８】また、図５（ｂ）に示す反射型フォトイン
タラプタにおいて、コーティング材８に遮光性の添加剤
を混入することによって、両チップ間の光リークを確実
に解消でき有用である。Further, in the reflection type photo interrupter shown in FIG. 5B, it is useful to mix the light-shielding additive in the coating material 8 to surely eliminate the light leak between the two chips.
【００４９】図６は本発明の他の実施例による反射型フ
ォトインタラプタの樹脂硬化後の断面図である。FIG. 6 is a sectional view of a reflective photo interrupter according to another embodiment of the present invention after resin curing.
【００５０】図６に示すように、樹脂６の注入量を調整
することによって硬化後の樹脂６の表面形状を凸状に盛
り上げることができる。ここで、樹脂６の盛り上りによ
る受発光チップ間の光もれを防止するために、Ｃ部のよ
うに両チップ間のしきい壁を高く形成している。As shown in FIG. 6, the surface shape of the cured resin 6 can be raised to a convex shape by adjusting the injection amount of the resin 6. Here, in order to prevent light leakage between the light emitting / receiving chips due to the swelling of the resin 6, a threshold wall between the two chips is formed to be high like the C portion.
【００５１】以上の構造によれば、樹脂６の表面形状が
平坦時に比べて、発光チップ１３側の発光輝度及び受光
チップ１９側の受光量をさらに向上でき、高感度の反射
型フォトインタラプタが得られる。According to the above structure, the light emission brightness on the light emitting chip 13 side and the amount of light received on the light receiving chip 19 side can be further improved as compared with when the surface shape of the resin 6 is flat, and a highly sensitive reflective photointerrupter is obtained. To be
【００５２】以上のように本発明による受発光素子及び
反射型フォトインタラプタにおいては、ケース２，１２
への樹脂６の注入時にケース内容量を多少越える樹脂を
注入してもケース２，１２の天面に樹脂６をはじくコー
ティング材８を塗布しているので熱硬化時に樹脂６がケ
ース外へ流出することはない。本発明によればケース内
容量の１０〜３０％を余分に注入してもケース外へ樹脂
６が流出することはない。従って熱硬化後の樹脂６の表
面を平坦または凸状にでき凹状になることを避けられ
る。As described above, in the light emitting / receiving element and the reflection type photo interrupter according to the present invention, the cases 2 and 12 are used.
When the resin 6 is injected into the resin, the coating material 8 that repels the resin 6 is applied to the top surfaces of the cases 2 and 12 even if the resin that slightly exceeds the capacity of the case is injected, so the resin 6 flows out of the case during thermosetting. There is nothing to do. According to the present invention, the resin 6 does not flow out of the case even if 10 to 30% of the capacity of the case is additionally injected. Therefore, the surface of the resin 6 after thermosetting can be made flat or convex and can be prevented from becoming concave.
【００５３】このため、従来、発光チップ３，１３から
の放射光または受光チップ１９への外部からの入射光が
樹脂６の表面の凹レンズ効果により分散するといった事
態を解消でき発光輝度や受光量を向上できる。Therefore, it is possible to solve the problem that the emitted light from the light emitting chips 3 and 13 or the incident light from the outside to the light receiving chip 19 is dispersed due to the concave lens effect on the surface of the resin 6 in the related art. Can be improved.
【００５４】さらに、樹脂６がケース２，１２の外へ流
出することがないので、半田付用の導体端子１，１１に
樹脂６が付着することは無く良好な半田性を確保でき歩
留りを向上できる。Further, since the resin 6 does not flow out of the cases 2 and 12, the resin 6 does not adhere to the conductor terminals 1 and 11 for soldering, good solderability can be secured, and the yield is improved. it can.
【００５５】また、反射型フォトインタラプタの場合、
樹脂６の流出が無いことから、発光チップ搭載用凹部１
７及び受光チップ搭載用凹部１８内の樹脂６が互いにつ
ながって発光チップ１３からの光が受光チップ１９にリ
ークするのを防止できる。In the case of a reflection type photo interrupter,
Since the resin 6 does not flow out, the recess 1 for mounting the light emitting chip 1
It is possible to prevent the light 7 from the light emitting chip 13 from leaking to the light receiving chip 19 due to the resin 7 in the light receiving chip mounting recess 18 being connected to each other.
【００５６】なお、図１乃至図６に示した実施例におい
ては、樹脂６として熱硬化性エポキシ樹脂を、またコー
ティング材８としてシリコン系樹脂を使用したが、コー
ティング材８が樹脂６をはじく組み合わせであればこれ
に限るものではない。例えば、樹脂６としてシリコン系
樹脂を、またコーティング材８としてエポキシ系樹脂を
使用する組み合わせであっても良い。In the embodiment shown in FIGS. 1 to 6, the thermosetting epoxy resin is used as the resin 6 and the silicone resin is used as the coating material 8. However, the combination of the coating material 8 repelling the resin 6 is used. If so, it is not limited to this. For example, a combination may be used in which a silicone resin is used as the resin 6 and an epoxy resin is used as the coating material 8.
【００５７】[0057]
【発明の効果】以上説明したように本発明によれば、発
光チップまたは受光チップを搭載するための凹部を有す
る樹脂ケースを有し、前記凹部を含む樹脂ケースに立体
的に金属メッキ配線を施し、前記凹部金属メッキ配線上
に前記発光チップまたは受光チップが載置、樹脂封止さ
れてなる光学装置において、硬化後の封止樹脂表面を平
坦または凸状にでき、封止樹脂表面が凹状になって光が
分散されてしまうことを防止でき、発光輝度や受光量を
向上できる。As described above, according to the present invention, the resin case having the recess for mounting the light emitting chip or the light receiving chip is provided, and the resin case including the recess is three-dimensionally metal-plated. In an optical device in which the light emitting chip or the light receiving chip is placed on the recessed metal plating wiring and resin-sealed, the cured sealing resin surface can be flat or convex, and the sealing resin surface can be concave. Therefore, it is possible to prevent the light from being dispersed, and it is possible to improve the emission brightness and the amount of received light.
【００５８】また、ケース外部への封止樹脂の流出を防
止できるので歩留りの向上や光リークの解消を図れる。Further, since the sealing resin can be prevented from flowing out of the case, the yield can be improved and the light leakage can be eliminated.
【図１】本発明の一実施例による樹脂封止前の発光素子
の断面図である。FIG. 1 is a cross-sectional view of a light emitting device before resin sealing according to an embodiment of the present invention.
【図２】（ａ）及び（ｂ）は本発明の一実施例による発
光素子の樹脂封止過程図である。2A and 2B are resin encapsulation process diagrams of a light emitting device according to an embodiment of the present invention.
【図３】本発明の他の実施例による発光素子の断面図で
ある。FIG. 3 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
【図４】本発明の一実施例による反射型フォトインタラ
プタの断面図である。FIG. 4 is a sectional view of a reflective photo interrupter according to an embodiment of the present invention.
【図５】（ａ）及び（ｂ）は本発明の一実施例による反
射型フォトインタラプタの樹脂封止過程図である。5A and 5B are process diagrams of resin encapsulation of a reflective photo interrupter according to an embodiment of the present invention.
【図６】本発明の他の実施例による反射型フォトインタ
ラプタの断面図である。FIG. 6 is a cross-sectional view of a reflective photo interrupter according to another embodiment of the present invention.
【図７】（ａ）は従来例による発光素子の樹脂封止前の
平面図、（ｂ）は（ａ）のＡ−Ａ’線断面図である。7A is a plan view of a conventional light emitting device before resin sealing, and FIG. 7B is a sectional view taken along line AA ′ of FIG.
【図８】（ａ）及び（ｂ）は従来例による発光素子の樹
脂封止過程図である。8A and 8B are resin sealing process diagrams of a light emitting device according to a conventional example.
【図９】他の従来例による発光素子の樹脂封止前の断面
図である。FIG. 9 is a cross-sectional view of another conventional light emitting device before resin sealing.
【図１０】（ａ）及び（ｂ）は他の従来例による発光素
子の樹脂封止過程図である。10A and 10B are resin sealing process diagrams of a light emitting device according to another conventional example.
【図１１】（ａ）は従来例による樹脂封止前の反射型フ
ォトインタラプタの平面図、（ｂ）は（ａ）のＢ−Ｂ’
線断面図である。11A is a plan view of a reflective photointerrupter before resin sealing according to a conventional example, and FIG. 11B is a BB ′ of FIG.
It is a line sectional view.
【図１２】（ａ）及び（ｂ）は従来例による反射型フォ
トインタラプタの樹脂封止過程図である。12A and 12B are resin encapsulation process diagrams of a reflective photo interrupter according to a conventional example.
１，１１ 金属メッキ配線 ２，１２ 樹脂ケース ２’ 凹部 ３，１３ 発光チップ ６ 封止用樹脂 ８ コーティング材 １７ 発光チップ搭載用凹部 １８ 受光チップ搭載用凹部 １９ 受光チップ 1,11 Metal plating wiring 2,12 resin case 2'recess 3,13 light emitting chip 6 Sealing resin 8 coating materials 17 Light emitting chip mounting recess 18 Light receiving chip mounting recess 19 Light receiving chip
Claims (3)
ための凹部を有する樹脂ケースを備え、前記凹部を含む
樹脂ケースに立体的に金属メッキ配線を施し、前記凹部
の金属メッキ配線上に前記発光チップまたは受光チップ
が載置、樹脂封止されてなる光学装置において、 前記凹部の開口面に、前記封止用樹脂をはじくコーティ
ング材を施してなることを特徴とする光学装置。1. A resin case having a recess for mounting a light emitting chip or a light receiving chip is provided, metal plating wiring is three-dimensionally applied to the resin case including the recess, and the light emitting chip is provided on the metal plating wiring of the recess. Alternatively, an optical device in which a light-receiving chip is placed and resin-sealed, wherein an opening surface of the recess is coated with a coating material that repels the sealing resin.
において、 前記封止用樹脂の表面を開口面と平坦か、それ以上に盛
り上がるよう形成してなることを特徴とする光学装置。2. The optical device according to claim 1, wherein the surface of the sealing resin is formed so as to be flat with the opening surface or to be raised more than that.
載の光学装置において、 前記封止用樹脂にエポキシ系樹脂を、また前記コーティ
ング材にシリコーン系樹脂を使用してなることを特徴と
する光学装置。3. The optical device according to claim 1 or 2, wherein an epoxy resin is used as the sealing resin and a silicone resin is used as the coating material. Characterized optical device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17959391A JP2781475B2 (en) | 1991-07-19 | 1991-07-19 | Optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17959391A JP2781475B2 (en) | 1991-07-19 | 1991-07-19 | Optical device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0529650A true JPH0529650A (en) | 1993-02-05 |
| JP2781475B2 JP2781475B2 (en) | 1998-07-30 |
Family
ID=16068445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17959391A Expired - Fee Related JP2781475B2 (en) | 1991-07-19 | 1991-07-19 | Optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2781475B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722652A (en) * | 1993-06-30 | 1995-01-24 | Matsushita Electric Works Ltd | Injection molded printed board and its manufacture |
| JPH08264823A (en) * | 1995-01-27 | 1996-10-11 | Sharp Corp | Photocoupler |
| US6060729A (en) * | 1997-11-26 | 2000-05-09 | Rohm Co., Ltd. | Light-emitting device |
| JP2001196644A (en) * | 2000-01-11 | 2001-07-19 | Nichia Chem Ind Ltd | Optical semiconductor device and manufacturing method thereof |
| WO2003001612A1 (en) * | 2001-06-20 | 2003-01-03 | Nichia Corporation | Semiconductor device and its fabriction method |
| JP2006173536A (en) * | 2004-12-20 | 2006-06-29 | Nec Lighting Ltd | Surface-mounted led and its manufacturing method |
| JP2010171424A (en) * | 2009-01-23 | 2010-08-05 | Yiguang Electronic Ind Co Ltd | Light-emitting diode package structure |
| JP2012063764A (en) * | 2010-08-20 | 2012-03-29 | Citizen Holdings Co Ltd | Base plate having optical structure and optical element using the same |
| JP2012142410A (en) * | 2010-12-28 | 2012-07-26 | Rohm Co Ltd | Light emitting element unit and method for manufacturing the same, light emitting element package, and lighting system |
| WO2017217280A1 (en) * | 2016-06-16 | 2017-12-21 | 株式会社村田製作所 | Optical sensor and method for manufacturing same |
| JP2018174267A (en) * | 2017-03-31 | 2018-11-08 | 旭化成エレクトロニクス株式会社 | Optical device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100678A (en) * | 1978-01-25 | 1979-08-08 | Omron Tateisi Electronics Co | Photo coupler |
| JPS55156447U (en) * | 1979-04-24 | 1980-11-11 | ||
| JPS63274188A (en) * | 1987-05-06 | 1988-11-11 | Sharp Corp | Optical coupling element |
| JPH01305547A (en) * | 1988-06-03 | 1989-12-08 | New Japan Radio Co Ltd | Manufacture of optical semiconductor device |
| JPH02102563A (en) * | 1988-10-12 | 1990-04-16 | Shindengen Electric Mfg Co Ltd | Semiconductor device and manufacture thereof |
| JPH02201396A (en) * | 1988-11-29 | 1990-08-09 | Valeo Vision | Light emitting strip |
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1991
- 1991-07-19 JP JP17959391A patent/JP2781475B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100678A (en) * | 1978-01-25 | 1979-08-08 | Omron Tateisi Electronics Co | Photo coupler |
| JPS55156447U (en) * | 1979-04-24 | 1980-11-11 | ||
| JPS63274188A (en) * | 1987-05-06 | 1988-11-11 | Sharp Corp | Optical coupling element |
| JPH01305547A (en) * | 1988-06-03 | 1989-12-08 | New Japan Radio Co Ltd | Manufacture of optical semiconductor device |
| JPH02102563A (en) * | 1988-10-12 | 1990-04-16 | Shindengen Electric Mfg Co Ltd | Semiconductor device and manufacture thereof |
| JPH02201396A (en) * | 1988-11-29 | 1990-08-09 | Valeo Vision | Light emitting strip |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722652A (en) * | 1993-06-30 | 1995-01-24 | Matsushita Electric Works Ltd | Injection molded printed board and its manufacture |
| JPH08264823A (en) * | 1995-01-27 | 1996-10-11 | Sharp Corp | Photocoupler |
| US6060729A (en) * | 1997-11-26 | 2000-05-09 | Rohm Co., Ltd. | Light-emitting device |
| JP2001196644A (en) * | 2000-01-11 | 2001-07-19 | Nichia Chem Ind Ltd | Optical semiconductor device and manufacturing method thereof |
| WO2003001612A1 (en) * | 2001-06-20 | 2003-01-03 | Nichia Corporation | Semiconductor device and its fabriction method |
| JP2006173536A (en) * | 2004-12-20 | 2006-06-29 | Nec Lighting Ltd | Surface-mounted led and its manufacturing method |
| JP2010171424A (en) * | 2009-01-23 | 2010-08-05 | Yiguang Electronic Ind Co Ltd | Light-emitting diode package structure |
| EP2211394A3 (en) * | 2009-01-23 | 2013-12-25 | Everlight Electronics Co., Ltd. | Light emitting diode package structure |
| JP2012063764A (en) * | 2010-08-20 | 2012-03-29 | Citizen Holdings Co Ltd | Base plate having optical structure and optical element using the same |
| JP2012142410A (en) * | 2010-12-28 | 2012-07-26 | Rohm Co Ltd | Light emitting element unit and method for manufacturing the same, light emitting element package, and lighting system |
| US9082945B2 (en) | 2010-12-28 | 2015-07-14 | Rohm Co., Ltd. | Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device |
| US9997682B2 (en) | 2010-12-28 | 2018-06-12 | Rohm Co., Ltd. | Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device |
| WO2017217280A1 (en) * | 2016-06-16 | 2017-12-21 | 株式会社村田製作所 | Optical sensor and method for manufacturing same |
| JP2018174267A (en) * | 2017-03-31 | 2018-11-08 | 旭化成エレクトロニクス株式会社 | Optical device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2781475B2 (en) | 1998-07-30 |
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