JPH0529143U - Electrode structure of semiconductor device - Google Patents

Abstract

(57) [Abstract] [Purpose] To improve the bonding yield by reducing the variation when inputting / correcting the bonding coordinates and reducing the amount of bonding deviation. [Structure] A protruding pattern 1-5 is drawn from the end of the electrode metal film 1 in the direction of the scribe line 3. The projecting pattern 1-5 is drawn out near the center of the electrode width 1-2 at the end of the electrode metal film 1, and the drawing direction is
Protrusion pattern 1-
5 is used to improve the position accuracy.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode structure of a semiconductor device, and more particularly to an electrode structure which eliminates a short circuit between electrodes due to a bonding deviation during wire bonding.

[0002]

[Prior Art]

 A conventional technique will be described with reference to the drawings. FIG. 7 is a plan view of an electrode portion of a conventional semiconductor device. A desired number of electrode metal films 1 are provided in parallel with the scribe line 3 in the vicinity of the scribe line 3 which is the outer edge of a semiconductor device (hereinafter referred to as LSI). An opening 2 is provided in the insulating film on the electrode metal film 1 so that a part of the electrode metal film 1 is exposed to the outside.

The shape of the opening 2 is usually rectangular, and the side parallel to the scribe line 3 is called the opening width 2-1 and the vertical side is called the opening length 2-2. Therefore, the area of the exposed metal 1-1 is equal to the product of the opening width and the opening length.

On the other hand, the electrode metal film is electrically connected to the internal wiring pattern 4 through the through holes 5 and the like, and is led to an electric circuit inside the LSI (not shown).

Generally, a wire bonding method is used as a means for electrically connecting an LSI having such an electrode structure and a package. At that time, in order to stabilize the adhesion between the wire and the exposed metal pad, a slight unevenness is formed on the surface of the exposed metal 1 in advance by a treatment such as a wet etching method.

In recent years, the degree of integration of LSI has been improved, and the number of electrodes has been dramatically increased accordingly. Since it is necessary to provide as many electrodes as possible on the LSI having a limited area, the electrode pitch (pad pitch) is being reduced, and as a result, the electrode width 1-2, the opening width 2-1 and the electrode spacing are provided. All of 1-3 are becoming smaller.

As the electrode pitch (pad pitch) is reduced, defects during wire bonding are increasing.

That is, there is a short circuit between adjacent electrodes due to a contact between a capillary (tool) and an adjacent wire at the time of bonding, a short circuit between wires, and a misalignment of bonding at an electrode portion. In particular, as the electrode pitch (pad pitch) becomes finer to a certain extent, the margin for bonding displacement is extremely reduced, and the problem of short circuit between adjacent electrodes cannot be ignored.

As a method of mitigating the influence of the bonding deviation, there is a method of matching the electrode shape with the wire direction as shown in FIG. The basic configuration is the same as in FIG. That is, the electrode metal film 1, the opening 2, the scribe line 3, the internal wiring pattern 4, and the through hole 5. However, since the shape of the electrode and the direction of the wire 6 are made to coincide with each other, the opening 2 and the electrode metal film 1 are not rectangular, but the shape of the parallelogram is reduced, and the size of the electrode is also reduced. , The larger the area is, the closer to the LSI corner (because of radial wiring).

Further, the electrode interval 1-3 is different between the scribe line side and the internal wiring pattern side. From the above, although there is a margin for bonding deviation, it is not possible to lay out at high density due to the electrode arrangement. Therefore, it is assumed that the wire directions are all parallel in the design for the fine pitch electrode of 150 μm or less. As a current situation, electrodes having rectangular openings as shown in FIG. 7 are arranged.

[0011]

[Problems to be solved by the device]

 It was mentioned in the previous section that if the electrode pitch is reduced using the conventional electrode structure, the margin for bonding displacement will decrease and the risk of short-circuiting between adjacent electrodes will increase. In particular, in the area where the electrode pitch is 120 μm or less, even if the accuracy of the wire bonder itself is stable, erroneous input of data and erroneous correction are likely to occur at the time of inputting and correcting the bonding coordinates, so that the bonding deviation occurs. It tends to occur. This is shown in FIG.

FIG. 9 shows a state of the electrode part of the LSI projected on the wire bonder screen. The cross mark 7 serves as an index for storing the position in the IC memory on the wire bonder side or another storage device when the bonding coordinates are input and corrected.

When the electrode pitch (pad pitch) is 120 μm or less, the electrode interval 1-3 cannot be separated as shown in the figure, and the positional accuracy in the lateral direction on the screen is deteriorated to about ± 10 μm as compared with ± 5 μm. However, this causes a problem that a short circuit occurs between the adjacent electrodes as shown in FIG.

As a conventional technique for preventing this, as shown in FIG. 11, when a target mark 1-4 having a step is provided on an exposed metal portion in an opening portion and a coordinate is inputted / corrected by a cross mark, There is a case to secure the position accuracy (Japanese Patent Application No. 3-006147).

However, since the surface of the exposed metal portion is roughened by wet etching, the contrast is lowered on the screen of the wire bonder, and the target mark 14 cannot be clearly discriminated. No effect.

An object of the present invention is to provide an electrode structure of a semiconductor device, which reduces variations in inputting / correcting bonding coordinates and reduces the amount of bonding deviation, thereby improving the bonding yield. ..

[0017]

[Means for Solving the Problems]

 In order to achieve the above-mentioned object, an electrode structure of a semiconductor device according to the present invention is an electrode structure having an opening in an insulating film on an electrode metal film and exposing a part of the electrode metal film, It has a protruding pattern in which the end portion of the electrode metal film is drawn out at a right angle to the scribe line direction.

In addition, a structure is provided in which a slit is provided in the protrusion pattern in a direction perpendicular to the scribe line.

[0019]

[Action]

 At the end of the electrode metal film, there is a protruding pattern drawn out in the scribe line direction. By having this protruding pattern, the positional accuracy at the time of inputting and correcting the bonding coordinates is secured to 5 μm or less even at an electrode pitch of 120 μm pitch or less where the electrode interval is unclear.

[0020]

【Example】

 Next, the present invention will be described with reference to the drawings.

(Embodiment 1) FIG. 1 is a plan view showing an electrode structure of a semiconductor device according to Embodiment 1 of the present invention.

In FIG. 1, a desired number of electrode metal films 1 are provided in the vicinity of the scribe line 3 in a direction parallel to the scribe line 3. An opening 2 is provided in the insulating film on the electrode metal film 1 so that a part of the electrode metal film 1 is exposed to the outside. The exposed metal 1-1 exposed to the outside has slight irregularities formed on its surface in advance by a process such as a wet etching method. The shape of the opening 2 is rectangular, the side parallel to the scribe line 3 is called the opening width 2-1, and the vertical side is called the opening length 2-2.

On the other hand, the electrode metal film 1 is electrically connected to the internal wiring pattern 4 via the through holes 5 and the like, and is led to an electric circuit inside the LSI (not shown).

The protruding pattern 1-5 is drawn out from the end of the electrode metal film 1 on the scribe line side in a direction perpendicular to the scribe line. The part where the protrusion pattern 1-5 is pulled out is the central part with respect to the electrode width.

When a sample having an electrode pitch (pad pitch) of 120 μm or less is captured by a wire bonder camera in the electrode structure having the above-described configuration, an image as shown in FIG. 2 is displayed on the screen.

It is difficult to identify the electrode interval 1-3, but by aligning the cross mark 7 on the protruding pattern 1-5, the position by coordinate input and correction can be compared with the case where the protruding pattern 1-5 is not present. The accuracy is improved by about 5 μm.

(Embodiment 2) FIG. 3 is a plan view showing an electrode structure of a semiconductor device according to Embodiment 2 of the present invention. Since the main components are the same as in the first embodiment, only the differences will be described here.

In the second embodiment, a slit 1-6 is provided at the center of the protruding pattern 1-5. The root of the slit 1-6 is located at the center of the electrode width at the end of the electrode metal film 1, and the width of the slit 1-6 is about 3 to 5 μm.

In the electrode structure having the above-described structure, when a sample having an electrode pitch (pad pitch) of 120 μm or less is captured by a wire bonder camera, an image as shown in FIG. 4 is displayed on the screen. Also in this case, it is difficult to identify the electrode interval 1-3, but by matching the slits 1-6 of the protrusion pattern 1-5 with the cross mark 7, the coordinate input, The position accuracy at the time of correction is improved by about 5 to 10 μm.

(Third Embodiment) FIG. 5 is a plan view showing an electrode structure of a semiconductor device according to a third embodiment of the present invention. Since the main components are the same as in the first and second embodiments, only the differences will be described here.

In the third embodiment, the protrusion pattern 1-5 is provided with the slit 1-6 and the sharpened portion 1-7 that closes the tip of the slit 1-6 and is formed in an acute angle.

The base of the slit 1-6 is located at the center of the electrode width at the end of the electrode metal film 1, and the width of the slit 1-6 is about 3 to 5 μm.

On the other hand, the distance L (see FIG. 5) from the center 2-3 of the opening 2 to the sharpened portion 1-7 is from the intersection 7a to the upper end 7b of the cross mark 7 of the wire bonder device used. Is set to a distance that matches the distance (see FIG. 6) on the screen.

FIG. 6 shows a sample having an electrode pitch (pad pitch) of 120 μm or less captured by a wire bonder camera and projected on the screen in the electrode structure having the above-described configuration. Also in this case, it is difficult to identify the electrode interval 1-3, but by making the slits 1-6 and the cross mark 7 coincide with each other, the positional accuracy at the time of coordinate input and correction is better than that when there is no protruding pattern. It is improved by about 5 to 10 μm.

Further, also in the depth direction of the electrode, since the positional accuracy can be secured by aligning the upper end portion 7b of the cross mark 7 with the sharpened portion 1-7 of the protruding pattern 1-5, the total accuracy is 2. It becomes about 5 μm, and fine pitch bonding can be performed stably.

[0036]

[Effect of the device]

 As described above, the present invention has the protruding pattern in which the end portion of the electrode metal film is drawn out in the scribe line direction, and the lead-out portion of this protruding pattern is near the center of the electrode width of the electrode metal film end and Since the direction is perpendicular to the scribe line, the positional accuracy at the time of inputting and correcting the bonding coordinates can be secured to 5 μm or less even at an electrode pitch of 120 μm or less where the electrode spacing is unclear. This has the effect of reducing bonding misalignment defects and improving yield.

[Brief description of drawings]

FIG. 1 is a plan view showing a first embodiment of the present invention.

FIG. 2 is a diagram showing an image of Example 1 displayed on a CRT screen of a wire bonder.

FIG. 3 is a plan view showing a second embodiment of the present invention.

FIG. 4 is a diagram showing an image of Example 2 displayed on a CRT screen of a wire bonder.

FIG. 5 is a plan view showing a third embodiment of the present invention.

FIG. 6 is a diagram showing an image of Example 3 displayed on a CRT screen of a wire bonder.

FIG. 7 is a plan view showing a conventional example.

FIG. 8 is a plan view showing a conventional example in which the wire direction and the electrode shape are aligned.

FIG. 9 is a diagram showing an image in the conventional example of FIG. 7 projected on a CRT screen of a wire bonder.

FIG. 10 is a conceptual diagram showing a short circuit defect between adjacent electrodes due to a bonding shift.

FIG. 11 is a plan view showing a conventional example in which a target mark is provided on an exposed metal portion.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electrode metal film 1-1 Exposed metal 1-2 Electrode width 1-3 Electrode spacing 1-4 Target mark 1-5 Projection pattern 1-6 Slit of projection pattern 1-7 Sharp tip 2 of projection pattern 2 Opening 2- 1 Opening width 2-2 Opening length 3 Scribing line 4 Internal wiring pattern 5 Through hole 6 Wire 7 Cross mark

Claims (2)

[Scope of utility model registration request] 1. An opening is formed in an insulating film on an electrode metal film,
An electrode structure for exposing a part of an electrode metal film, the electrode structure of a semiconductor device having a protruding pattern in which an end portion of the electrode metal film is drawn out at a right angle to a scribe line direction. 2. The electrode structure of a semiconductor device according to claim 1, wherein a slit is provided in the protrusion pattern in a direction perpendicular to the scribe line.