JPH05291076A - Method of forming outer electrode of laminated ceramic capacitor - Google Patents

Method of forming outer electrode of laminated ceramic capacitor

Info

Publication number
JPH05291076A
JPH05291076A JP11825792A JP11825792A JPH05291076A JP H05291076 A JPH05291076 A JP H05291076A JP 11825792 A JP11825792 A JP 11825792A JP 11825792 A JP11825792 A JP 11825792A JP H05291076 A JPH05291076 A JP H05291076A
Authority
JP
Japan
Prior art keywords
ceramic capacitor
weight
dielectric
parts
glass frit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11825792A
Other languages
Japanese (ja)
Other versions
JP3253028B2 (en
Inventor
Shinichiro Kuroiwa
慎一郎 黒岩
Masayoshi Maeda
昌禎 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP11825792A priority Critical patent/JP3253028B2/en
Publication of JPH05291076A publication Critical patent/JPH05291076A/en
Application granted granted Critical
Publication of JP3253028B2 publication Critical patent/JP3253028B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To enable an outer electrode high enough in adhesive strength to be formed on a dielectric body of Pb composite perovskite ceramic without causing cracks to it, restraining a ceramic capacitor element from decreasing in insulation resistance even after the outer electrode is plated with metal such as nickel or the like. CONSTITUTION:Conductive paste containing 100 parts by weight of Ag powder and 18 to 27 parts by weight of glass frit of PbO-B2O3-SiO2 whose softening point is below 400 deg.C is applied onto a laminated ceramic capacitor element 3 where Pb composite perovskite ceramic is made to serve as dielectric body 1 and baked at a temperature lower than 600 deg.C for the formation of an outer electrode 4.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、積層セラミックコン
デンサに関し、詳しくは、Pb系複合ペロブスカイト型
セラミックを誘電体として用いた積層セラミックコンデ
ンサの外部電極形成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monolithic ceramic capacitor, and more particularly to a method of forming an external electrode of a monolithic ceramic capacitor using a Pb-based composite perovskite type ceramic as a dielectric.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】この発
明が関連する積層セラミックコンデンサとしては、例え
ば、図1に示すように、BaTiO3系誘電体セラミッ
ク(高温焼成セラミック)からなる誘電体11中に複数
層の内部電極(例えば、Pd電極)12を積層して積層
セラミックコンデンサ素子13を形成し、その両端側に
導電ペーストを塗布、焼付けして外部電極14を形成す
るとともに、ニッケル、スズ、あるいは半田などのメッ
キを施し、外部電極14上に金属メッキ膜15を形成し
て、実装時の半田付け工程における銀くわれを防止した
り、半田付け性を向上させたりした積層セラミックコン
デンサがある。
2. Description of the Related Art As a monolithic ceramic capacitor to which the present invention is related, for example, as shown in FIG. 1, a dielectric 11 made of a BaTiO 3 -based dielectric ceramic (high temperature fired ceramic) is used. A plurality of layers of internal electrodes (for example, Pd electrodes) 12 are laminated to form a monolithic ceramic capacitor element 13, and a conductive paste is applied and baked on both ends of the monolithic ceramic capacitor element 13 to form external electrodes 14, and nickel, tin, and Alternatively, there is a monolithic ceramic capacitor that is plated with solder or the like and a metal plating film 15 is formed on the external electrode 14 to prevent silver nicks in the soldering process at the time of mounting or to improve solderability. ..

【0003】そして、上記のような積層セラミックコン
デンサおいては、近年、小型化、大容量化への要求が大
きくなり、その要求に応えるために高い誘電率を有する
Pb系複合ペロブスカイト型セラミックが誘電体として
用いられるに至っている。
In recent years, in the above-mentioned monolithic ceramic capacitor, there is an increasing demand for miniaturization and large capacity, and in order to meet the demand, a Pb-based composite perovskite ceramic having a high dielectric constant is used as a dielectric. It has been used as a body.

【0004】このPb系複合ペロブスカイト型セラミッ
クは、高い誘電率を有するとともに、900〜1000
℃という低温で焼結できるという特徴を有しており、積
層セラミックコンデンサの誘電体として使用した場合、
焼結温度を低くすることが可能であるため、内部電極と
して、耐熱性に優れた高価なPtやPdを用いることな
く、Agの含有率が高く経済的なAg−Pd合金を用い
ることができるという長所がある。
This Pb-based composite perovskite-type ceramic has a high dielectric constant and is 900-1000.
It has the characteristic that it can be sintered at a low temperature of ℃, and when used as a dielectric for a monolithic ceramic capacitor,
Since the sintering temperature can be lowered, an economical Ag-Pd alloy having a high Ag content can be used as the internal electrode without using expensive Pt or Pd having excellent heat resistance. There is an advantage called.

【0005】しかし、Pb系複合ペロブスカイト型セラ
ミックを誘電体として用いた積層セラミックコンデンサ
において外部電極を形成する場合、導電ペーストを積層
セラミックコンデンサ素子に塗布して800℃以上の温
度で焼付けを行うと、ガラスフリットとPb系複合ペロ
ブスカイト型セラミック(誘電体)が反応してガラス成
分が誘電体の粒界に侵入し、誘電体にクラックが発生し
て、内部電極切れを生じ、静電容量が変動するという問
題点がある。
However, when forming external electrodes in a laminated ceramic capacitor using a Pb-based composite perovskite type ceramic as a dielectric, if a conductive paste is applied to the laminated ceramic capacitor element and baked at a temperature of 800 ° C. or higher, The glass frit reacts with the Pb-based composite perovskite ceramic (dielectric), the glass component enters the grain boundaries of the dielectric, cracks occur in the dielectric, internal electrode breakage occurs, and the capacitance fluctuates. There is a problem.

【0006】また、Pb系複合ペロブスカイト型セラミ
ックは、BaTiO3系セラミックなどの高温焼成セラ
ミックに比べて化学的耐久性(特に耐酸性)が低いた
め、外部電極にメッキ処理を施す工程でメッキ液が外部
電極を経て誘電体(Pb系複合ペロブスカイト型セラミ
ック)にまで達し、誘電体を侵して対向電極間の絶縁不
良を生じさせ、特性を劣化させるという問題点がある。
Further, the Pb-based composite perovskite-type ceramic has lower chemical durability (particularly acid resistance) than high-temperature fired ceramics such as BaTiO 3 -based ceramics, so that the plating solution is used in the step of plating the external electrodes. There is a problem that it reaches the dielectric (Pb-based composite perovskite type ceramics) through the external electrodes, penetrates the dielectric, causes insulation failure between the counter electrodes, and deteriorates the characteristics.

【0007】この発明は、上記問題点を解決するもので
あり、Pb系複合ペロブスカイト型セラミックからなる
誘電体にクラック(内部クラック)を発生させず、ニッ
ケルやスズなどの金属メッキを行った後にも対向電極間
の絶縁抵抗を低下させることがなく、接着強度にも優れ
た外部電極を形成することが可能な積層セラミックコン
デンサの外部電極形成方法を提供することを目的とす
る。
The present invention solves the above-mentioned problems and does not cause cracks (internal cracks) in a dielectric body made of a Pb-based composite perovskite ceramic, and can be used even after metal plating such as nickel or tin is performed. An object of the present invention is to provide a method of forming an external electrode of a laminated ceramic capacitor, which can form an external electrode having excellent adhesive strength without lowering insulation resistance between opposed electrodes.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、この発明の積層セラミックコンデンサの外部電極形
成方法は、Pb系複合ペロブスカイト型セラミックから
なる誘電体中に内部電極が積層された積層セラミックコ
ンデンサ素子に外部電極を形成するとともに、該外部電
極にニッケルメッキなどの金属メッキを施してなる積層
セラミックコンデンサの外部電極形成方法であって、A
g粉末100重量部と、軟化点が400℃以下のPbO
−B23−SiO2系ガラスフリット18〜27重量部
とを含有する導電ペーストを、積層セラミックコンデン
サ素子に塗布し、600℃以下の温度で焼付けを行うこ
とにより外部電極を形成することを特徴とする。
In order to achieve the above object, a method of forming an external electrode of a monolithic ceramic capacitor according to the present invention is a monolithic ceramic in which an internal electrode is laminated in a dielectric made of a Pb-based composite perovskite type ceramic. A method for forming an external electrode of a monolithic ceramic capacitor, comprising forming an external electrode on a capacitor element and plating the external electrode with a metal such as nickel.
100 parts by weight of powder and PbO having a softening point of 400 ° C. or less
A conductive paste containing 18 to 27 parts by weight of —B 2 O 3 —SiO 2 -based glass frit is applied to a multilayer ceramic capacitor element and baked at a temperature of 600 ° C. or less to form an external electrode. Characterize.

【0009】なお、上記ガラスフリットは、Al23
Na2O、K2O、及びZnOの1種または2種以上を1
0重量%以下の割合で含有するものであってもよい。
The glass frit is made of Al 2 O 3 ,
1 or 2 or more of Na 2 O, K 2 O, and ZnO
It may be contained in a proportion of 0% by weight or less.

【0010】[0010]

【作用】積層セラミックコンデンサ素子に塗布した導電
ペーストの焼付けが低温で行われるため、Pb系複合ペ
ロブスカイト型セラミックからなる誘電体にクラック
(内部クラック)を発生させることなく、内部電極の断
線(内部電極切れ)による静電容量の変動(劣化)を防
止することが可能になるとともに、外部電極中のガラス
成分が金属メッキ液の誘電体への浸透を阻止して、対向
電極間の絶縁抵抗の劣化を防止し、良好な特性を保持す
ることを可能にする。
Since the conductive paste applied to the monolithic ceramic capacitor element is baked at a low temperature, the internal electrode disconnection (internal electrode) does not occur without causing cracks (internal cracks) in the dielectric made of the Pb-based composite perovskite type ceramic. It is possible to prevent the fluctuation (deterioration) of the electrostatic capacitance due to breakage, and prevent the glass component in the external electrodes from permeating the metal plating solution into the dielectric, which deteriorates the insulation resistance between the opposing electrodes. And it is possible to maintain good characteristics.

【0011】また、Ag粉末に添加されるガラスフリッ
トとして、軟化点が低いガラスフリットが用いられてい
るため、焼付け温度を低くしても十分な接着強度を得る
ことができる。
Further, since a glass frit having a low softening point is used as the glass frit added to the Ag powder, sufficient adhesive strength can be obtained even if the baking temperature is lowered.

【0012】[0012]

【実施例】以下、この発明の実施例を比較例とともに示
してその特徴をさらに詳しく説明する。
EXAMPLES Hereinafter, examples of the present invention will be shown together with comparative examples to further explain the features thereof.

【0013】この実施例においては、式: Pb(Mg1/3Nb2/3)O3−Pb(Zn1/3Nb2/3
3−PbTiO3 で表されるPb系複合ペロブスカイト型セラミックを誘
電体として用い、この誘電体中にAg−Pdからなる内
部電極を積層するとともに、下記の実施例1〜4及び比
較例1〜3に示すような導電ペーストを用い、これをP
b系複合ペロブスカイト型セラミックからなる誘電体に
塗布し、所定の焼成条件で焼付けを行って外部電極を形
成するとともに、外部電極が形成された積層セラミック
コンデンサ素子を多数の通液孔が形成されたバレルに入
れ、例えば、硫酸ニッケルや硫酸スズなどを含有するメ
ッキ液に浸漬し、バレルを回転させて外部電極上にニッ
ケルメッキ、スズ、あるいは半田などをメッキすること
により、積層セラミックコンデンサを製造した。すなわ
ち、この積層セラミックコンデンサは、図1に示すよう
に、誘電体1中に複数層の内部電極2が積層された積層
セラミックコンデンサ素子3の両端側に外部電極4を設
け、さらに、外部電極4上に金属メッキ膜5を配設する
ことにより形成されている。
In this example, the formula: Pb (Mg 1/3 Nb 2/3 ) O 3 -Pb (Zn 1/3 Nb 2/3 )
A Pb-based composite perovskite type ceramic represented by O 3 -PbTiO 3 is used as a dielectric, and an internal electrode made of Ag-Pd is laminated in the dielectric, and the following Examples 1 to 4 and Comparative Examples 1 to 1 are used. Use a conductive paste as shown in 3
An external electrode was formed by applying it to a dielectric made of b-type composite perovskite ceramic and baking it under a predetermined baking condition, and a multilayer ceramic capacitor element having the external electrode was formed with a large number of liquid passage holes. A monolithic ceramic capacitor was manufactured by placing it in a barrel and immersing it in a plating solution containing nickel sulfate, tin sulfate, etc., and rotating the barrel to plate nickel plating, tin, or solder on the external electrodes. .. That is, in this monolithic ceramic capacitor, as shown in FIG. 1, external electrodes 4 are provided on both ends of a monolithic ceramic capacitor element 3 in which a plurality of layers of internal electrodes 2 are laminated in a dielectric 1, and further external electrodes 4 are provided. It is formed by disposing the metal plating film 5 on the top.

【0014】実施例1 Ag粉末 : 100重量部 ガラスフリット : 18重量部 (組成)……PbO:B23:SiO2:Al23=8
5:11:2:2(重量比) (軟化点)…330℃ 有機ビヒクル : 40重量部 を含有する導電ペーストを外部電極として塗布し、52
0℃の温度条件下に焼付けを行った後、Niメッキ、ス
ズメッキ、及び半田メッキのいずれかを施すことにより
積層セラミックコンデンサを製造する。
Example 1 Ag powder: 100 parts by weight Glass frit: 18 parts by weight (composition) ... PbO: B 2 O 3 : SiO 2 : Al 2 O 3 = 8
5: 11: 2: 2 (weight ratio) (softening point) ... 330 ° C. Organic vehicle: A conductive paste containing 40 parts by weight was applied as an external electrode.
After baking under the temperature condition of 0 ° C., any of Ni plating, tin plating, and solder plating is applied to manufacture a monolithic ceramic capacitor.

【0015】実施例2〜4 ガラスフリットの添加量を20重量部(実施例2)、2
3重量部(実施例3)、27重量部(実施例4)に変え
たこと以外は上記実施例1と同一の条件、方法により積
層セラミックコンデンサを製造する。
Examples 2 to 4 Add 20 parts by weight of glass frit (Example 2), 2
A monolithic ceramic capacitor is manufactured under the same conditions and methods as those of Example 1 above, except that the amounts of these components are changed to 3 parts by weight (Example 3) and 27 parts by weight (Example 4).

【0016】比較例1〜3 ガラスフリットの添加量を15重量部(比較例1)、1
6重量部(比較例2)、30重量部(比較例3)に変え
たこと以外は上記実施例1と同一の条件、方法により積
層セラミックコンデンサを製造する。
Comparative Examples 1 to 3 15 parts by weight of glass frit (Comparative Example 1), 1
A monolithic ceramic capacitor is manufactured under the same conditions and methods as in Example 1 above, except that the amount was changed to 6 parts by weight (Comparative Example 2) and 30 parts by weight (Comparative Example 3).

【0017】上記のようにして製造した積層セラミック
コンデンサについて、メッキ後に発生した絶縁不良数、
及び電極引張強度を調べるとともに、誘電体の内部クラ
ックの発生の有無などを観察した。その結果を表1に示
す。
With respect to the multilayer ceramic capacitor manufactured as described above, the number of insulation defects generated after plating,
Also, the tensile strength of the electrode was examined, and the presence or absence of internal cracks in the dielectric was observed. The results are shown in Table 1.

【0018】[0018]

【表1】 [Table 1]

【0019】なお、表1において、「絶縁不良数」は、
直流16Vを印加し、一分後に、logIR<8.50と
なる試料の数(試料数100個当りの数)を示し、「電
極引張強度」は、引張り試験において電極破壊が生じた
ときの荷重(試料100個の平均値)を示している。
In Table 1, the "number of defective insulation" is
The number of samples (log per 100 samples) with logIR <8.50 after 1 minute of application of DC 16V is shown. "Electrode tensile strength" is the load when the electrode breaks in the tensile test. (Average value of 100 samples) is shown.

【0020】なお、比較例3の試料については、外部電
極形成後(導電ペーストの焼付け後)に誘電体(Pb系
複合ペロブスカイト型セラミック)に内部クラックの発
生が認められたため、絶縁不良数、及び電極引張強度の
測定(評価)は行わなかった。この内部クラックは、導
電ペースト中のガラスフリットの含有量が多いため、焼
成時の体積収縮による応力が大きくなることにより生じ
たものとみられる。
In the sample of Comparative Example 3, since the occurrence of internal cracks in the dielectric (Pb-based composite perovskite ceramic) after forming the external electrodes (after baking the conductive paste), the number of insulation defects and The electrode tensile strength was not measured (evaluated). It is considered that the internal cracks were caused by a large amount of glass frit contained in the conductive paste, and thus increased stress due to volume contraction during firing.

【0021】また、図2は、ガラスフリット添加量と絶
縁不良発生率及び電極引張強度との関係を示す線図であ
る。
FIG. 2 is a diagram showing the relationship between the glass frit addition amount, the insulation failure occurrence rate and the electrode tensile strength.

【0022】表1に示すように、ガラスフリットの添加
量が18重量部未満の比較例1及び比較例2において
は、試料100個につき、6個(比較例1),及び3個
(比較例2)の試料について絶縁不良の発生が認められ
た。
As shown in Table 1, in Comparative Example 1 and Comparative Example 2 in which the amount of glass frit added was less than 18 parts by weight, 6 pieces (Comparative Example 1) and 3 pieces (Comparative Example) per 100 samples. Insulation failure was observed in the sample 2).

【0023】また、表2から、ガラスフリットの添加量
が増加すると絶縁不良発生率が減少し、Ag粉末100
重量部に対するガラスフリットの添加量が18重量部を
越えると絶縁不良が発生しなくなることがわかる。した
がって、ガラスフリットの添加量は、18重量部以上で
あることが好ましい。
Further, from Table 2, the increase in the amount of glass frit added decreases the incidence of insulation failure, and the Ag powder 100
It can be seen that when the addition amount of the glass frit with respect to parts by weight exceeds 18 parts by weight, insulation failure does not occur. Therefore, the addition amount of the glass frit is preferably 18 parts by weight or more.

【0024】また、表1及び図2より、ガラスフリット
の添加量が増加するとともに電極引張強度も増大する
が、ガラスフリットの添加量が27重量部を越え、30
重量部に達すると前述のように誘電体にクラックが発生
するため、ガラスフリットの添加量は、27重量部以下
であることが好ましい。
From Table 1 and FIG. 2, the addition amount of glass frit increases and the tensile strength of the electrode also increases, but the addition amount of glass frit exceeds 27 parts by weight and 30
When the amount of the glass frit reaches the weight part, cracks are generated in the dielectric as described above. Therefore, the addition amount of the glass frit is preferably 27 parts by weight or less.

【0025】なお、上記実施例においては、式: Pb(Mg1/3Nb2/3)O3−Pb(Zn1/3Nb2/3
3−PbTiO3 で表されるPb系複合ペロブスカイト型セラミックを誘
電体として用いた場合について説明したが、Pb系複合
ペロブスカイト型セラミックは、上記実施例のセラミッ
クに限られるものではなく、その他の種々のPb系複合
ペロブスカイト型セラミックを用いることができる。
In the above embodiment, the formula: Pb (Mg 1/3 Nb 2/3 ) O 3 -Pb (Zn 1/3 Nb 2/3 )
Although the case where the Pb-based composite perovskite-type ceramic represented by O 3 -PbTiO 3 is used as the dielectric has been described, the Pb-based composite perovskite-type ceramic is not limited to the ceramics of the above-described examples, and other various types. The Pb-based composite perovskite-type ceramic can be used.

【0026】また、PbO−B23−SiO2系ガラス
フリットの成分比率についても上記実施例に限定される
ものではなく、上記実施例とは異なる成分比率にするこ
とが可能であり、さらに、Al23、Na2O、K2O、
ZnOの1種または2種以上を10重量%以下の割合で
含有させることも可能である。
Further, the component ratio of the PbO-B 2 O 3 -SiO 2 glass frit is not limited to that in the above embodiment, and it is possible to make the component ratio different from that in the above embodiment. , Al 2 O 3 , Na 2 O, K 2 O,
It is also possible to contain one kind or two or more kinds of ZnO in a proportion of 10% by weight or less.

【0027】また、この発明の積層セラミックコンデン
サの外部電極の形成方法においては、積層セラミックコ
ンデンサ素子の形状や外部電極の形状に特に制約はな
く、必要に応じて種々の形状に形成することが可能であ
る。
Further, in the method of forming the external electrodes of the monolithic ceramic capacitor of the present invention, there is no particular restriction on the shape of the monolithic ceramic capacitor element or the shape of the external electrodes, and various shapes can be formed as necessary. Is.

【0028】[0028]

【発明の効果】上述のように、この発明の積層セラミッ
クコンデンサの外部電極形成方法は、Ag粉末100重
量部と、軟化点が400℃以下のPbO−B23−Si
2系ガラスフリット18〜27重量部とを含有する導
電ペーストを積層セラミックコンデンサ素子に塗布し、
600℃以下の温度で焼付けを行うことにより外部電極
を形成するようにしているので、ペロブスカイト型セラ
ミックからなる誘電体にクラック(内部クラック)を発
生させることがなく、静電容量の変動(劣化)を防止す
ることができるとともに、金属メッキ液の誘電体への浸
透を阻止し、対向電極間の絶縁抵抗の劣化を防止して良
好な特性を保持することが可能になる。
According to the present invention as described above, the external electrode forming method of a multilayer ceramic capacitor of the present invention, a Ag powder 100 parts by weight, a softening point of 400 ° C. or less of PbO-B 2 O 3 -Si
A conductive paste containing O 2 -based glass frit 18 to 27 parts by weight is applied to the laminated ceramic capacitor element,
Since the external electrodes are formed by baking at a temperature of 600 ° C. or lower, no crack (internal crack) is generated in the dielectric made of perovskite type ceramic, and fluctuation (deterioration) in capacitance is caused. It is possible to prevent the metal plating solution from penetrating into the dielectric and prevent the insulation resistance between the counter electrodes from deteriorating, thereby maintaining good characteristics.

【0029】また、Ag粉末に添加されるガラスフリッ
トとして、軟化点が低いガラスフリットが用いられてい
るため、焼付け温度を低くしても十分な接着強度を得る
ことができる。
Further, since the glass frit having a low softening point is used as the glass frit added to the Ag powder, sufficient adhesive strength can be obtained even if the baking temperature is lowered.

【0030】したがって、この発明の積層セラミックコ
ンデンサの外部電極の形成方法によれば、十分な強度を
有する外部電極を形成することができるとともに、金属
メッキを施した後の絶縁抵抗の劣化を抑制して良好な特
性を維持することができる。
Therefore, according to the method of forming the external electrode of the monolithic ceramic capacitor of the present invention, the external electrode having sufficient strength can be formed and the deterioration of the insulation resistance after the metal plating is suppressed. And good characteristics can be maintained.

【0031】さらに、絶縁抵抗を劣化させることなくメ
ッキ処理を施すことができるため、実装時の半田付け工
程における銀くわれを防止し(ニッケルメッキを施した
場合)、あるいは半田付け性を向上させる(スズメッキ
あるいは半田メッキを施した場合)ことが可能になる。
Further, since the plating treatment can be performed without deteriorating the insulation resistance, silver cracks can be prevented (when nickel plating is applied) in the soldering process at the time of mounting or the solderability is improved. (When tin-plated or solder-plated) is possible.

【図面の簡単な説明】[Brief description of drawings]

【図1】図1はこの発明の一実施例にかかる方法により
外部電極を形成した積層セラミックコンデンサを示す断
面図である。
FIG. 1 is a sectional view showing a monolithic ceramic capacitor having external electrodes formed by a method according to an embodiment of the present invention.

【図2】ガラスフリットの添加量と、絶縁不良発生率及
び電極引張強度との関係を示す線図である。
FIG. 2 is a diagram showing the relationship between the addition amount of glass frit, the insulation failure occurrence rate, and the electrode tensile strength.

【符号の説明】[Explanation of symbols]

1 誘電体(Pb系複合ペロブスカイト型セ
ラミック) 2 内部電極 3 積層セラミックコンデンサ素子 4 外部電極 5 金属メッキ膜
1 Dielectric (Pb-based composite perovskite ceramic) 2 Internal electrode 3 Multilayer ceramic capacitor element 4 External electrode 5 Metal plating film

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 Pb系複合ペロブスカイト型セラミック
からなる誘電体中に内部電極が積層された積層セラミッ
クコンデンサ素子に外部電極を形成するとともに、該外
部電極にニッケルメッキなどの金属メッキを施してなる
積層セラミックコンデンサの外部電極形成方法であっ
て、Ag粉末100重量部と、軟化点が400℃以下の
PbO−B23−SiO2系ガラスフリット18〜27
重量部とを含有する導電ペーストを、積層セラミックコ
ンデンサ素子に塗布し、600℃以下の温度で焼付けを
行うことにより外部電極を形成することを特徴とする積
層セラミックコンデンサの外部電極形成方法。
1. A laminated body in which an external electrode is formed on a laminated ceramic capacitor element in which an internal electrode is laminated in a dielectric made of a Pb-based composite perovskite ceramic, and the external electrode is plated with a metal such as nickel. an external electrode forming method of a ceramic capacitor, a Ag powder 100 parts by weight, a softening point of 400 ° C. or less PbO-B 2 O 3 -SiO 2 based glass frit 18-27
A method for forming an external electrode of a multilayer ceramic capacitor, comprising forming a external electrode by applying a conductive paste containing 1 part by weight to a multilayer ceramic capacitor element and baking at a temperature of 600 ° C. or less.
JP11825792A 1992-04-09 1992-04-09 External electrode forming method of multilayer ceramic capacitor Expired - Lifetime JP3253028B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11825792A JP3253028B2 (en) 1992-04-09 1992-04-09 External electrode forming method of multilayer ceramic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11825792A JP3253028B2 (en) 1992-04-09 1992-04-09 External electrode forming method of multilayer ceramic capacitor

Publications (2)

Publication Number Publication Date
JPH05291076A true JPH05291076A (en) 1993-11-05
JP3253028B2 JP3253028B2 (en) 2002-02-04

Family

ID=14732148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11825792A Expired - Lifetime JP3253028B2 (en) 1992-04-09 1992-04-09 External electrode forming method of multilayer ceramic capacitor

Country Status (1)

Country Link
JP (1) JP3253028B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561587A (en) * 1993-12-10 1996-10-01 Murata Manufacturing Co., Ltd. Conductive paste and multilayer ceramic capacitor
US6489875B1 (en) * 1999-07-07 2002-12-03 Tdk Corporation Multi-layer ferrite chip inductor array and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100616677B1 (en) * 2005-04-11 2006-08-28 삼성전기주식회사 Glass frit for dielectric ceramic composition, dielectric ceramic composition, multilayer laminated ceramic capacitor and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561587A (en) * 1993-12-10 1996-10-01 Murata Manufacturing Co., Ltd. Conductive paste and multilayer ceramic capacitor
US6489875B1 (en) * 1999-07-07 2002-12-03 Tdk Corporation Multi-layer ferrite chip inductor array and manufacturing method thereof

Also Published As

Publication number Publication date
JP3253028B2 (en) 2002-02-04

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