JPH05283556A - Electronic component and manufacture thereof - Google Patents

Electronic component and manufacture thereof

Info

Publication number
JPH05283556A
JPH05283556A JP4076820A JP7682092A JPH05283556A JP H05283556 A JPH05283556 A JP H05283556A JP 4076820 A JP4076820 A JP 4076820A JP 7682092 A JP7682092 A JP 7682092A JP H05283556 A JPH05283556 A JP H05283556A
Authority
JP
Japan
Prior art keywords
alumina substrate
oxide
electrode
electronic component
glaze
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4076820A
Other languages
Japanese (ja)
Other versions
JP2713005B2 (en
Inventor
Koichi Ikemoto
浩一 池本
Hiroshi Takeuchi
寛 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4076820A priority Critical patent/JP2713005B2/en
Publication of JPH05283556A publication Critical patent/JPH05283556A/en
Application granted granted Critical
Publication of JP2713005B2 publication Critical patent/JP2713005B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Magnetic Films (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Hall/Mr Elements (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

PURPOSE:To obtain an electronic component of a fine pattern of a thin film having an element which has no irregularity in shape by obtaining a glazed alumina board having very small warpage. CONSTITUTION:An alkali-free glaze 2 having smaller thermal expansion coefficient than that of an alumina board 1 is baked at a high temperature to be formed at a recess side of the board 1 which is warped by a predetermined amount in a predetermined direction obtained by utilizing a difference of shrinkage factors generated at the time of burning due to differences of particle size and distribution of alumina powder. Thus, a glazed alumina board having a low cost, high strength, excellent environmental resistant reliability and surface smoothness and very small warpage is obtained. Since an electronic component is obtained through photolithography technique by using the board, an irregularity in exposure of the pattern due to warpage of the board can be eliminated. When the board is divided into individual products after an element is formed, the component having a micropattern of a thin film state having excellent quality in the element can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はアルミナ基板と、このア
ルミナ基板の片面上に形成されたガラスグレーズと、基
板の一部に形成された電極と、電極と接続する素子部を
有する電子部品及びその製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component having an alumina substrate, a glass glaze formed on one side of the alumina substrate, an electrode formed on a part of the substrate, and an element portion connected to the electrode. The present invention relates to a manufacturing method thereof.

【0002】[0002]

【従来の技術】近年、薄膜の微細なパターンを素子部と
する電子部品の下地基板には、低価格、高強度、耐環境
信頼性と表面平滑性に優れることを利点に、アルミナを
主成分とするセラミック粉末に、有機結合剤と、可塑剤
と、溶剤を加えて混合・攪はんしてスラリー状にし、ド
クターブレード法でシート状に造膜した(以下、グリー
ンシートという)後焼成して得られた不規則に反ったア
ルミナ基板の片面上に、酸化珪素、酸化バリウム等を主
成分とするアルカリフリーの高転移点ガラスが約110
0〜1200℃の高温において焼成されたものがよく使
用されている。そして、この基板に電極を形成し、表面
に例えば蒸着等により薄膜を形成した後、ホトリソグラ
フィ技術を用いて電極と接続された所定の微細なパター
ン形状の素子部を形成し、さらにグレーズ、素子部、表
面電極を無機や有機の膜で覆うことにより電子部品を構
成している。
2. Description of the Related Art In recent years, alumina-based materials have been used as a base substrate for electronic parts having thin film fine patterns as element parts because of their advantages of low cost, high strength, environmental reliability and surface smoothness. An organic binder, a plasticizer, and a solvent are added to the ceramic powder to be mixed and stirred to form a slurry, which is then formed into a sheet by the doctor blade method (hereinafter referred to as a green sheet) and then fired. Alkali-free high-transition-temperature glass containing silicon oxide, barium oxide, or the like as a main component was formed on one surface of the irregularly warped alumina substrate obtained by about 110.
Those that are fired at a high temperature of 0 to 1200 ° C. are often used. Then, an electrode is formed on this substrate, a thin film is formed on the surface by, for example, vapor deposition, and then an element portion having a predetermined fine pattern connected to the electrode is formed by using a photolithography technique. An electronic component is configured by covering the portion and the surface electrode with an inorganic or organic film.

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記のよ
うな構成では、粒度分布が大きいアルミナ粉を無機を主
成分とするグリーンシートを焼成したアルミナ基板(熱
膨張係数75〜80×10-7/℃)の凸側に、酸化珪
素、酸化バリウム等を主成分とするアルカリフリーの高
転移点ガラス(熱膨張係数が60〜70×10-7/℃)
を約1100〜1200℃の高温において焼成すること
によりグレーズを形成しているため、グレーズ側が凸に
2インチ当り約100μm反った基板となり、さらに、
マスク汚れに対する歩留向上のためにプロキシミティー
アライナを用いてギャップを設けて、基板中心に焦点を
合わせて露光しているので、形成されるパターンの形状
は、基板中心から離れる程、解像度の悪化によって、マ
スクのそれからかけ離れたものとなっていた。即ち、例
えば素子部形成後に基板を分割して個々の製品とする場
合には、抵抗値の分布が大きくなるという問題点を有し
ていた。
However, in the above structure, an alumina substrate (coefficient of thermal expansion of 75 to 80 × 10 −7 / ° C.) obtained by firing a green sheet whose main component is an alumina powder having a large particle size distribution is used. ), The alkali-free high-transition-point glass (coefficient of thermal expansion is 60 to 70 × 10 −7 / ° C.) whose main component is silicon oxide, barium oxide, etc.
Since the glaze is formed by baking at a high temperature of about 1100 to 1200 ° C., a substrate in which the glaze side is convexly warped by about 100 μm per 2 inches, and further,
The proximity aligner is used to form a gap to improve the yield against mask contamination, and the exposure is focused on the center of the substrate. Therefore, the resolution of the formed pattern becomes worse as the distance from the center of the substrate increases. Was far from that of the mask. That is, for example, when the substrate is divided into individual products after the element portion is formed, there is a problem that the distribution of the resistance value becomes large.

【0004】本発明は上記課題に鑑み、反りの非常に小
さいグレーズドアルミナ基板を得ることにより、薄膜の
微細なパターンであって、かつ形状ばらつきが無い素子
部を有する電子部品及びその製造方法を提供するもので
ある。
In view of the above problems, the present invention provides an electronic component having an element portion which is a fine pattern of a thin film and has no shape variation by obtaining a glazed alumina substrate having a very small warp, and a manufacturing method thereof. To do.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に本発明の電子部品は、アルミナ基板と、このアルミナ
基板の片面上に形成された酸化珪素、酸化バリウム等を
主成分とするアルカリフリーのガラスグレーズと、前記
アルミナ基板の一部に形成された電極用の導体と、ガラ
スグレーズ上に電極と接続するように形成した所定の形
状の導電体または誘電体もしくは抵抗体などの薄膜から
なる素子部とで構成したものである。
In order to achieve the above object, an electronic component of the present invention comprises an alumina substrate and an alkali-free aluminum oxide formed on one surface of the alumina substrate, containing silicon oxide, barium oxide or the like as a main component. Glass glaze, a conductor for an electrode formed on a part of the alumina substrate, and a thin film such as a conductor or a dielectric or resistor having a predetermined shape formed on the glass glaze so as to be connected to the electrode. It is composed of an element part.

【0006】また、その製造方法は、アルミナの平均粒
径が異なるグリーンシートを二枚以上積層圧着した後焼
成して一定方向に一定量反ったアルミナ基板を得る工程
と、このアルミナ基板の片面上に酸化珪素、酸化アルミ
ニウム、酸化バリウム、酸化カルシウム等を主成分とす
るガラスペーストをスクリーン印刷した後、焼成して反
りの小さいグレーズドアルミナ基板を得る工程と、この
グレーズドアルミナ基板の一部に導体を蒸着等の薄膜形
成法、あるいは導体ペーストの焼成等の厚膜形成法によ
り形成する工程と、グレーズ上に導電体または誘電体も
しくは抵抗体などの薄膜を形成し、レジスト塗布、露
光、現像、エッチング、レジスト剥離を経て所定形状の
電極と接した素子部を形成する工程とからなるものであ
る。
Further, the manufacturing method thereof includes a step of laminating and pressing two or more green sheets having different average particle diameters of alumina, followed by firing to obtain an alumina substrate which is warped in a certain direction by a certain amount, and on one surface of the alumina substrate. After screen-printing a glass paste containing silicon oxide, aluminum oxide, barium oxide, calcium oxide, etc. as a main component, the firing is performed to obtain a glazed alumina substrate with small warpage, and a conductor is provided on a part of the glazed alumina substrate. Forming by a thin film forming method such as vapor deposition or a thick film forming method such as firing a conductor paste, and forming a thin film such as a conductor, a dielectric or a resistor on the glaze, resist coating, exposure, development, etching And a step of forming an element portion in contact with an electrode having a predetermined shape through resist stripping.

【0007】[0007]

【作用】この構成によれば、アルミナ粉の粒径と分布の
違いにより、焼成時に生じる収縮率の違いを利用して得
た一定方向に一定量反ったアルミナ基板の凹側に、それ
より熱膨張係数の小さいアルカリフリーのグレーズを高
温で焼成し形成することにより、低価格、高強度、耐環
境信頼性と表面平滑性に優れた反りが非常に小さいグレ
ーズドアルミナ基板を得、その基板を用いて、ホトリソ
グラフィ技術を通して電子部品を得るため、従来課題で
あった基板の反りに起因していたパターンの露光ばらつ
きを無くすことができる。そのため素子部形成後に基板
を分割して個々の製品とする場合には、例えば抵抗値の
分布が小さいものといった、品質に優れた薄膜状の微細
なパターンを素子部に持つ電子部品を提供することがで
きる。
According to this structure, due to the difference in the particle size and distribution of the alumina powder, the difference in shrinkage that occurs during firing is used to obtain a certain amount of heat in the concave side of the alumina substrate that is warped in a certain direction. By baking an alkali-free glaze with a small expansion coefficient at a high temperature to form it, we obtained a glazed alumina substrate with low warp, high strength, environmental reliability and surface smoothness and very small warpage. Since the electronic component is obtained through the photolithography technique, it is possible to eliminate the exposure variation of the pattern due to the warp of the substrate, which is a conventional problem. Therefore, when the substrate is divided into individual products after the element portion is formed, it is necessary to provide an electronic component having a fine film-like fine pattern in the element portion, which is excellent in quality, such as one having a small resistance value distribution. You can

【0008】[0008]

【実施例】(実施例1)以下、本発明の一実施例の電子
部品として磁気抵抗効果素子を例にとって図面を参照し
ながら説明する。図1は本発明の一実施例における磁気
抵抗効果素子の断面図、図2は上面図である。また、
(表1)は本発明の一実施例の磁気抵抗効果素子と従来
の磁気抵抗効果素子のパターン幅、抵抗値、中点電位値
を示したものである。
(Embodiment 1) A magnetoresistive effect element will be described below as an electronic component of an embodiment of the present invention with reference to the drawings. FIG. 1 is a sectional view of a magnetoresistive effect element according to an embodiment of the present invention, and FIG. 2 is a top view. Also,
Table 1 shows the pattern width, resistance value, and midpoint potential value of the magnetoresistive effect element according to one embodiment of the present invention and the conventional magnetoresistive effect element.

【0009】図1において、1はアルミナ基板、2はこ
のアルミナ基板1の片面上に形成された酸化珪素、酸化
バリウム等を主成分とするアルカリフリーのガラスグレ
ーズ、3は金属薄膜、4は電極で、この電極4はアルミ
ナ基板1の両端部において、アルミナ基板1の上面から
底面にかけて形成され、そして素子部を構成する金属薄
膜3は、電極4に両端部が重なるようにガラスグレーズ
2上に形成することにより電極4に接続されている。5
は金属薄膜3を覆うように形成した保護膜である。
In FIG. 1, 1 is an alumina substrate, 2 is an alkali-free glass glaze composed mainly of silicon oxide, barium oxide, etc. formed on one side of this alumina substrate 1, 3 is a metal thin film, and 4 is an electrode. The electrodes 4 are formed at both ends of the alumina substrate 1 from the top surface to the bottom surface of the alumina substrate 1, and the metal thin film 3 constituting the element portion is formed on the glass glaze 2 so that both ends overlap the electrodes 4. It is connected to the electrode 4 by being formed. 5
Is a protective film formed so as to cover the metal thin film 3.

【0010】本発明の一実施例の磁気抵抗効果素子は、
アルミナ基板1上に酸化珪素60wt%と酸化バリウム
25wt%を主成分とするガラスグレーズ2があり、そ
の上に、厚みが0.1μm、幅が10μmのパーマロイ
がストライプを折り返したような形状の強磁性体の金属
薄膜3が形成されている。また、銀:パラジウムの比が
13:87の電極4が強磁性体の金属薄膜3に接してお
り、そして強磁性体の金属薄膜3とガラスグレーズ2と
電極4をエポキシ系樹脂からなる保護膜5が覆った構成
である。
The magnetoresistive element according to one embodiment of the present invention is
On the alumina substrate 1, there is a glass glaze 2 having 60 wt% of silicon oxide and 25 wt% of barium oxide as its main components, and on top of that, a permalloy having a thickness of 0.1 μm and a width of 10 μm is formed into a stripe-like shape. A magnetic thin metal film 3 is formed. Further, the electrode 4 having a silver: palladium ratio of 13:87 is in contact with the ferromagnetic metal thin film 3, and the ferromagnetic metal thin film 3, the glass glaze 2 and the electrode 4 are protected by an epoxy resin. 5 is a covered structure.

【0011】以上のように構成された磁気抵抗効果素子
について、従来素子との比較評価結果を示す。
With respect to the magnetoresistive effect element constructed as described above, the results of comparative evaluation with the conventional element will be shown.

【0012】評価は本発明の一実施例の磁気抵抗効果素
子と従来素子のパターン幅、抵抗値、中点電位値の比較
で行った。
The evaluation was carried out by comparing the pattern width, the resistance value, and the midpoint potential value of the magnetoresistive effect element of one embodiment of the present invention and the conventional element.

【0013】パターン幅は走査型電子顕微鏡観察におい
て行った。抵抗値、中点電位値は図2の様に構成して測
定した。図2において、6は電流供給端子(+)、7は
GND端子、8,9は出力端子である。抵抗値は6−7
間を測定した。中点電位値は、6−7間に5Vを印加し
た時の7−8間、7−9間の電位を求めた。
The pattern width was measured by observing with a scanning electron microscope. The resistance value and the midpoint potential value were measured by configuring as shown in FIG. In FIG. 2, 6 is a current supply terminal (+), 7 is a GND terminal, and 8 and 9 are output terminals. Resistance value is 6-7
The interval was measured. As the midpoint potential value, the potential between 7-8 and 7-9 when 5 V was applied during 6-7 was determined.

【0014】[0014]

【表1】 [Table 1]

【0015】(表1)より明らかなように、本発明の一
実施例の磁気抵抗効果素子のパターン幅、抵抗値、中点
電位値は従来素子のそれらに比べてバラツキが小さくな
っており、特性の精度が向上したことがわかる。
As is clear from (Table 1), the pattern width, the resistance value, and the midpoint potential value of the magnetoresistive effect element according to one embodiment of the present invention are smaller than those of the conventional element. It can be seen that the accuracy of the characteristics has improved.

【0016】(実施例2)次に実施例1の磁気抵抗効果
素子の製造方法について説明する。
(Embodiment 2) Next, a method of manufacturing the magnetoresistive effect element of Embodiment 1 will be described.

【0017】アルミナ(平均粒径0.2μm)粉末を基
板材料の無機成分とし、有機バインダーとしてポリビニ
ルブチラール、可塑剤としてヂ−n−ブチルフタレー
ト、溶剤としてトルエンとエタノールの混合液(60対
40比)を以下の割合で混合し、湿式微粉砕を行ってス
ラリーとした。
Alumina (average particle size 0.2 μm) powder was used as the inorganic component of the substrate material, polyvinyl butyral as the organic binder, di-n-butyl phthalate as the plasticizer, and a mixed solution of toluene and ethanol as the solvent (60:40 ratio). ) Was mixed in the following proportions, and wet pulverization was performed to obtain a slurry.

【0018】 アルミナ粉末 100部 ポリビニルブチラール 15部 ヂ−n−ブチルフタレート 10部 トルエンとエタノールの混合液 20部 次に真空脱気処理によりスラリーから気泡を除去し、粘
度調整を行った。スラリーをドクターブレードを用いて
ポリエステルフィルム支持体上に塗布し、炉を通して乾
燥し、0.5ミリの厚さのグリーンシートを作製した。
グリーンシートを支持体より取り外し、80ミリ角に切
断した。
Alumina powder 100 parts Polyvinyl butyral 15 parts Di-n-butyl phthalate 10 parts Mixed solution of toluene and ethanol 20 parts Next, air bubbles were removed from the slurry by vacuum degassing to adjust the viscosity. The slurry was coated on a polyester film support using a doctor blade and dried in an oven to prepare a green sheet having a thickness of 0.5 mm.
The green sheet was removed from the support and cut into 80 mm squares.

【0019】一方、アルミナの平均粒径が異なった2μ
mのものを用いて同様の方法によって80ミリ角のグリ
ーンシートを作製した。次に、上記2種類のグリーンシ
ートを積層し、温度100℃、100kg/cm2で加圧し
た。その後、100℃/hの速度で昇温して1600℃
で1時間保持した後、室温にて取り出した。取り出した
アルミナ基板をレーザで所定サイズに切断し、さらにス
ルーホールを形成した。アルミナ基板の凹面上に、例え
ば酸化珪素60wt%と酸化バリウム25wt%を主成
分とするガラスの熱膨張係数が68×10-7のガラスペ
ーストをスクリーン印刷し1100℃で焼成した後、さ
らに例えばパラジウムと銀の比が13:87である導体
ペーストをスルーホール部とランドにスクリーン印刷し
850℃で焼成した。この基板を真空蒸着機に設置し、
所定の真空度に排気した後、パーマロイを0.1μmの
厚さで蒸着した。そして、レジスト塗布、独立したパタ
ーンの集合体であるマスクを用いた露光、現像、エッチ
ング、レジスト剥離を行って目的形状の素子部を得た。
次に、例えばエポキシ系樹脂を基板全面にスクリーン印
刷し硬化した後、各スルーホールを4分割するようにダ
イシングして図1,図2に示したような素子を255個
得、その後、裏面電極にリード線をはんだ付けした。
On the other hand, the average particle size of alumina is 2 μm.
An 80 mm square green sheet was produced by the same method using the m sheet. Next, the above two kinds of green sheets were laminated and pressed at a temperature of 100 ° C. and 100 kg / cm 2 . After that, the temperature is raised at a rate of 100 ° C / h to 1600 ° C.
After holding for 1 hour at room temperature, it was taken out at room temperature. The alumina substrate taken out was cut into a predetermined size with a laser, and a through hole was further formed. On the concave surface of the alumina substrate, for example, a glass paste containing 60 wt% of silicon oxide and 25 wt% of barium oxide as a main component and having a thermal expansion coefficient of 68 × 10 −7 is screen-printed and baked at 1100 ° C. A conductor paste having a silver to silver ratio of 13:87 was screen-printed on the through holes and the lands and fired at 850 ° C. Place this substrate on the vacuum deposition machine,
After evacuation to a predetermined vacuum degree, permalloy was vapor-deposited to a thickness of 0.1 μm. Then, resist coating, exposure using a mask that is an aggregate of independent patterns, development, etching, and resist stripping were performed to obtain an element portion having a target shape.
Next, for example, an epoxy resin is screen-printed on the entire surface of the substrate and cured, and then each through hole is diced into four parts to obtain 255 elements as shown in FIG. 1 and FIG. The lead wire was soldered to.

【0020】(表2)及び(表3)に基板分割前の素子
の位置と抵抗体のパターン幅、抵抗値、中点電位値の関
係を本実施例の製造方法によって得られた素子と従来素
子について比較して示す。図3に各素子の基板分割前の
位置を示す。図3中の丸中数字は(表2),(表3)の
それに一致する。
Tables 2 and 3 show the relationship between the position of the element before the substrate is divided and the pattern width of the resistor, the resistance value, and the midpoint potential value in comparison with the element obtained by the manufacturing method of the present embodiment. The elements are shown for comparison. FIG. 3 shows the position of each element before the substrate is divided. Numbers in circles in FIG. 3 correspond to those in (Table 2) and (Table 3).

【0021】[0021]

【表2】 [Table 2]

【0022】[0022]

【表3】 [Table 3]

【0023】(表2),(表3)より明らかなように、
本実施例の製造方法によって得られた素子は分割前の基
板上の位置に依存することなく設計値付近の特性を有し
たが、従来素子では位置に依存して、即ち基板中心から
外れるほど設計値からのズレが大きかったことがわか
る。
As is clear from (Table 2) and (Table 3),
The element obtained by the manufacturing method of the present example had characteristics close to the design value without depending on the position on the substrate before division, but in the conventional element, the design depends on the position, that is, the more the design deviates from the center of the substrate. It can be seen that the deviation from the value was large.

【0024】(表4)に本実施例におけるグレーズドア
ルミナ基板と従来例におけるグレーズドアルミナ基板の
反り値(ここでいう反り値は、基板の長辺方向の測定値
を意味する)を示す。
Table 4 shows the warp values of the glazed alumina substrate of this example and the conventional example (the warp value here means a measured value in the long side direction of the substrate).

【0025】[0025]

【表4】 [Table 4]

【0026】この(表4)より明らかなように、本実施
例におけるグレーズドアルミナ基板の反りは従来例にお
けるグレーズドアルミナ基板の反りの1/5以下である
ことがわかる。
As is clear from this (Table 4), the warp of the glazed alumina substrate in this example is 1/5 or less of the warp of the glazed alumina substrate in the conventional example.

【0027】(表5)に本実施例の製造方法によって得
られた素子と従来の製造方法によって得られた素子の歩
留(良品は抵抗値と中点電位値により選別し、基準は従
来素子と同じ)を示す。
Table 5 shows the yields of the devices obtained by the manufacturing method of this embodiment and the devices manufactured by the conventional manufacturing method (good products are selected according to the resistance value and the midpoint potential value, and the standard is the conventional device). Same as).

【0028】[0028]

【表5】 [Table 5]

【0029】この(表5)より明らかなように、本実施
例の製造方法によって磁気抵抗効果素子を得た場合、歩
留が従来方法に比べて35%向上したことがわかる。
As is clear from (Table 5), when the magnetoresistive effect element is obtained by the manufacturing method of this embodiment, the yield is improved by 35% as compared with the conventional method.

【0030】以上のように本実施例によれば、ドクター
ブレード法により得られたアルミナの平均粒径が異なる
グリーンシートを二枚以上積層圧着し焼成して一定方向
に一定量反ったアルミナ基板を得た後、このアルミナ基
板の凹面上にガラス時の熱膨張係数がアルミナより少し
小さい酸化珪素、酸化バリウム等を主成分とするガラス
ペーストをスクリーン印刷し、その後1000℃以上で
焼成して得た反りの小さいグレーズドアルミナ基板を用
い、このグレーズドアルミナ基板に素子部を形成する構
成であるため、以前生じていた露光バラツキによるパタ
ーン幅の分布が、1素子当りにおいて3%あったものが
0.5%に、基板当りにおいて10%あったものが2%
にまで減少でき、それに伴う抵抗値や中点電位値等の特
性の精度も同様に向上し、従って製造歩留も従来方法に
比べて35%向上する。
As described above, according to this embodiment, two or more green sheets having different average particle diameters of alumina obtained by the doctor blade method are laminated and pressure-bonded and fired to form an alumina substrate warped in a certain direction by a certain amount. After obtained, a glass paste containing silicon oxide, barium oxide, etc., whose main coefficient of thermal expansion was slightly smaller than that of alumina, was screen-printed on the concave surface of this alumina substrate and then baked at 1000 ° C. or higher. Since the element portion is formed on the glazed alumina substrate having a small warpage, the pattern width distribution due to the exposure variation that has occurred before is 3% per element. %, 2% was 10% per substrate
The accuracy of characteristics such as resistance value and midpoint potential value is also improved, and the manufacturing yield is improved by 35% as compared with the conventional method.

【0031】(実施例3)図4は本発明の他の実施例に
おける磁気抵抗効果素子の断面図である。
(Embodiment 3) FIG. 4 is a sectional view of a magnetoresistive effect element according to another embodiment of the present invention.

【0032】本実施例においては、ガラスグレーズ2を
電極4と面一に接触するように形成したものである。な
お、この場合、ガラスグレーズ2は電極4と完全に面一
になっていなくてもよい。例えば、一部が電極4に重な
る構造でもよい。
In this embodiment, the glass glaze 2 is formed so as to come into flush contact with the electrode 4. In this case, the glass glaze 2 may not be flush with the electrode 4. For example, the structure may be such that a part thereof overlaps the electrode 4.

【0033】本実施例の磁気抵抗効果素子の構成は、ア
ルミナ基板上に酸化鉛50wt%と酸化ホウ素5wt%
と酸化珪素35wt%と酸化アルミニウム5wt%を主
成分とするガラスグレーズ2を形成する点をのぞくと、
実施例1の構成と同様である。
The structure of the magnetoresistive effect element according to this embodiment is such that lead oxide 50 wt% and boron oxide 5 wt% are formed on an alumina substrate.
And except that the glass glaze 2 containing 35 wt% of silicon oxide and 5 wt% of aluminum oxide as main components is formed,
The configuration is the same as that of the first embodiment.

【0034】なお、ガラスグレーズ2の表面粗度は0.
20μmRa以下であった。以上のように構成された磁
気抵抗効果素子について、従来素子との比較評価結果を
示す。
The surface roughness of the glass glaze 2 is 0.
It was 20 μmRa or less. The results of comparative evaluation of the magnetoresistive effect element configured as described above with the conventional element are shown.

【0035】評価は実施例1と同様に本実施例の磁気抵
抗効果素子と従来素子のパターン幅、抵抗値、中点電位
値の比較で行った。
The evaluation was carried out by comparing the pattern width, resistance value and midpoint potential value of the magnetoresistive effect element of this example and the conventional element as in the case of Example 1.

【0036】パターン幅は走査型電子顕微鏡観察におい
て行った。抵抗値、中点電位値は実施例1と同様に図2
の様に構成して測定した。中点電位値は、6−7間に5
Vを印加した時の7−8間、7−9間の電位を求めた。
The pattern width was measured by scanning electron microscope observation. The resistance value and the midpoint potential value are as shown in FIG.
It was configured and measured as follows. The midpoint potential value is 5 during 6-7.
The potential between 7-8 and 7-9 when V was applied was determined.

【0037】同じく(表1)より明らかなように、本発
明の一実施例の磁気抵抗効果素子のパターン幅、抵抗
値、中点電位値は従来素子のそれらに比べてバラツキが
小さくなっており、特性の精度が向上したことがわか
る。
Similarly, as is clear from (Table 1), variations in the pattern width, resistance value, and midpoint potential value of the magnetoresistive effect element of one embodiment of the present invention are smaller than those of the conventional element. It can be seen that the accuracy of the characteristics has improved.

【0038】(実施例4)次に実施例3の磁気抵抗効果
素子の製造方法について説明する。
(Embodiment 4) Next, a method of manufacturing the magnetoresistive effect element of Embodiment 3 will be described.

【0039】アルミナスルーホール基板の片面上に酸化
鉛50wt%と酸化ホウ素5wt%と酸化珪素35wt
%と酸化アルミニウム5wt%を無機分中の主成分とす
るガラスペーストをスクリーン印刷後850℃で焼成
し、さらにパラジウムと銀の比が13:87である導体
ペーストをスルーホール部とランドにスクリーン印刷後
800℃で焼成した。その後、焼成した基板を真空蒸着
機に設置し、所定の真空度に排気した後、パーマロイを
0.1μmの厚さで蒸着した。そして、レジスト塗布、
独立したパターンの集合体であるマスクを用いた露光、
現像、エッチング、レジスト剥離を経て目的形状の素子
部を得た。次に、エポキシ系樹脂を基板全面にスクリー
ン印刷し硬化した後、各スルーホールを4分割するよう
にダイシングして図4に示すような素子を255個得、
その後、裏面電極にリード線をはんだ付けした。
50 wt% of lead oxide, 5 wt% of boron oxide, and 35 wt% of silicon oxide were formed on one surface of the alumina through-hole substrate.
% And aluminum oxide 5 wt% as a main component in the inorganic content are screen-printed and then fired at 850 ° C., and a conductor paste having a palladium to silver ratio of 13:87 is screen-printed on the through holes and lands. Then, it was baked at 800 ° C. After that, the fired substrate was placed in a vacuum vapor deposition machine, evacuated to a predetermined degree of vacuum, and then permalloy was vapor deposited to a thickness of 0.1 μm. And resist coating,
Exposure using a mask, which is a collection of independent patterns,
After development, etching, and resist stripping, an element portion having a target shape was obtained. Next, after epoxy-based resin is screen-printed on the entire surface of the substrate and cured, each through hole is diced into four parts to obtain 255 elements as shown in FIG.
Then, a lead wire was soldered to the back electrode.

【0040】(表6)に本実施例の製造方法によって得
られた素子について、基板分割前の素子の位置と抵抗体
のパターン幅、抵抗値、中点電位値の関係を示す。
Table 6 shows the relationship between the position of the element before the substrate is divided, the pattern width of the resistor, the resistance value, and the midpoint potential value of the element obtained by the manufacturing method of this embodiment.

【0041】各素子の基板分割前の位置を示す番号は図
3中の丸数字に一致する。
The numbers indicating the positions of the respective elements before the substrate is divided correspond to the circled numbers in FIG.

【0042】[0042]

【表6】 [Table 6]

【0043】(表3),(表6)より明らかなように、
本実施例の製造方法によって得られた素子は分割前の基
板上の位置に依存することなく設計値付近の特性を有し
たが、従来素子では位置に依存して、即ち基板中心から
外れるほど設計値からのズレが大きかったことがわか
る。
As is clear from (Table 3) and (Table 6),
The element obtained by the manufacturing method of the present example had characteristics close to the design value without depending on the position on the substrate before division, but in the conventional element, the design depends on the position, that is, the more the design deviates from the center of the substrate. It can be seen that the deviation from the value was large.

【0044】以上のように本実施例においても、実施例
3と同様な効果が得られる。 (実施例5)次に、実施例3の製造方法の他の例を説明
する。
As described above, also in this embodiment, the same effect as that of the third embodiment can be obtained. (Fifth Embodiment) Next, another example of the manufacturing method of the third embodiment will be described.

【0045】アルミナスルーホール基板の片面上に酸化
鉛15wt%と酸化ホウ素5wt%と酸化珪素70wt
%と酸化アルミニウム5wt%とアルカリ金属酸化物2
wt%を無機分中の主成分とするガラスペーストをスク
リーン印刷後900℃で焼成し、さらにパラジウムと銀
の比が13:87である導体ペーストをスルーホール部
とランドにスクリーン印刷後850℃で焼成した。その
後、焼成した基板を真空蒸着機に設置し、所定の真空度
に排気した後、パーマロイを0.1μmの厚さで蒸着し
た。そして、レジスト塗布、独立したパターンの集合体
であるマスクを用いた露光、現像、エッチング、レジス
ト剥離を経て目的形状の素子部を得た。次に、エポキシ
系樹脂を基板全面にスクリーン印刷し硬化した後、各ス
ルーホールを4分割するようにダイシングして図4に示
すような素子を255個得、その後、裏面電極にリード
線をはんだ付けした。
15 wt% of lead oxide, 5 wt% of boron oxide, and 70 wt% of silicon oxide were formed on one surface of the alumina through-hole substrate.
%, Aluminum oxide 5 wt% and alkali metal oxide 2
A glass paste containing wt% as a main component in the inorganic content is screen-printed and fired at 900 ° C., and a conductor paste having a palladium: silver ratio of 13:87 is screen-printed on through holes and lands at 850 ° C. Baked. Then, the fired substrate was placed in a vacuum vapor deposition machine, evacuated to a predetermined vacuum degree, and then permalloy was vapor deposited to a thickness of 0.1 μm. Then, an element portion having a target shape was obtained through resist coating, exposure using a mask which is an aggregate of independent patterns, development, etching, and resist stripping. Next, epoxy resin is screen-printed on the entire surface of the substrate and cured, and each through hole is diced into four parts to obtain 255 elements as shown in FIG. 4, and then lead wires are soldered to the back surface electrodes. I attached it.

【0046】本実施例において得られた磁気抵抗効果素
子においても、実施例4と同様な効果が得られた。
Also in the magnetoresistive effect element obtained in this example, the same effect as in Example 4 was obtained.

【0047】(実施例6)次に本発明の他の実施例につ
いて説明する。
(Sixth Embodiment) Next, another embodiment of the present invention will be described.

【0048】本実施例の磁気抵抗効果素子は、図4に示
すようにアルミナ基板1の一部に銀:パラジウムの比が
13:87の電極4が有り、酸化鉛50wt%と酸化ホ
ウ素5wt%と酸化珪素35wt%と酸化アルミニウム
5wt%を主成分とするガラスグレーズ2が導体電極4
の一部に重なってアルミナ基板1を覆っている。その上
に、厚みが0.1μm、幅が10μmのパーマロイがス
トライプを折り返したような形状をして電極に接してあ
り、パーマロイ膜とガラスグレーズ2とアルミナ基板1
上面にある電極4をエポキシ系樹脂が覆った構成であ
る。グレーズ2の表面粗度は0.20μmRa以下であ
った。
In the magnetoresistive element of this example, as shown in FIG. 4, there was an electrode 4 having a silver: palladium ratio of 13:87 on a part of an alumina substrate 1, 50 wt% of lead oxide and 5 wt% of boron oxide. The glass glaze 2 mainly composed of 35 wt% of silicon oxide and 5 wt% of aluminum oxide is the conductor electrode 4
, So as to cover the alumina substrate 1. On top of that, a permalloy having a thickness of 0.1 μm and a width of 10 μm is in contact with the electrode in the shape of a folded stripe, and the permalloy film, the glass glaze 2, and the alumina substrate 1 are formed.
The electrode 4 on the upper surface is covered with an epoxy resin. The surface roughness of the glaze 2 was 0.20 μmRa or less.

【0049】以上のように構成された磁気抵抗効果素子
について、従来素子との比較評価結果を(表7)に示
す。
The results of comparative evaluation of the magnetoresistive effect element having the above-described structure with the conventional element are shown in Table 7.

【0050】評価は本発明の一実施例の磁気抵抗効果素
子と従来素子のパターンの断線と虫食われの発生数の比
較で行った。
The evaluation was carried out by comparing the number of occurrences of breaks in the pattern of the magnetoresistive effect element of the embodiment of the present invention and the conventional element and the occurrence of worm eating.

【0051】[0051]

【表7】 [Table 7]

【0052】(表7)より明らかなように、本発明の一
実施例の磁気抵抗効果素子では、従来素子であったパタ
ーンの断線や虫食われが無いことがわかる。
As is clear from (Table 7), the magnetoresistive effect element according to the embodiment of the present invention is free from the disconnection of the pattern and the erosion of the worm which is the conventional element.

【0053】以上のように本実施例によれば、断線や虫
食われの無い薄膜の微細なパターンからなる素子部を持
つ電子部品が得られた。
As described above, according to this embodiment, an electronic component having an element portion composed of a fine pattern of a thin film free from disconnection and insect erosion was obtained.

【0054】(実施例7)次に実施例6の製造方法につ
いて説明する。
(Embodiment 7) Next, a manufacturing method of Embodiment 6 will be described.

【0055】アルミナスルーホール基板のランドとスル
ーホール部に、パラジウムと銀の比が13:87である
導体ペーストをスクリーン印刷後850℃で焼成し、片
面上に、酸化鉛50wt%と酸化ホウ素5wt%と酸化
珪素35wt%と酸化アルミニウム5wt%を無機分中
の主成分とするガラスペーストをスクリーン印刷後75
0℃で焼成し、その後、焼成した基板を真空蒸着機に設
置し、所定の真空度に排気した後、パーマロイを0.1
μmの厚さで蒸着した。そして、レジスト塗布、独立し
たパターンの集合体であるマスクを用いた露光、現像、
エッチング、レジスト剥離を経て目的形状の素子部を得
た。次に、エポキシ系樹脂を基板全面にスクリーン印刷
し硬化した後、各スルーホールを4分割するようにダイ
シングして図4に示すような素子を255個得、その
後、裏面電極にリード線をはんだ付けした。
A conductive paste having a palladium: silver ratio of 13:87 was screen-printed on the lands and through-holes of the alumina through-hole substrate and baked at 850 ° C., and 50 wt% of lead oxide and 5 wt% of boron oxide were formed on one surface. %, Silicon oxide 35% by weight, and aluminum oxide 5% by weight after screen printing a glass paste containing inorganic components as main components in the inorganic content 75
After firing at 0 ° C., the fired substrate is placed in a vacuum vapor deposition machine and evacuated to a predetermined vacuum degree, and then Permalloy is set to 0.1.
It was deposited to a thickness of μm. Then, resist coating, exposure using a mask that is an aggregate of independent patterns, development,
After the etching and the resist peeling, an element portion having a target shape was obtained. Next, epoxy resin is screen-printed on the entire surface of the substrate and cured, and each through hole is diced into four parts to obtain 255 elements as shown in FIG. 4, and then lead wires are soldered to the back surface electrodes. I attached it.

【0056】(表8)に本実施例の製造方法によって得
られた素子と従来の製造方法によって得られた素子の歩
留を示す。
Table 8 shows the yields of the device obtained by the manufacturing method of this example and the device obtained by the conventional manufacturing method.

【0057】[0057]

【表8】 [Table 8]

【0058】(表8)より明らかなように、本実施例の
製造方法によって磁気抵抗効果素子を得た場合、歩留
(良品は抵抗値と中点電位値により選別し、基準は従来
素子と同じ)が従来方法に比べて10%向上したことが
わかる。
As is clear from Table 8, when the magnetoresistive effect element is obtained by the manufacturing method of this embodiment, the yield (good products are selected according to the resistance value and the midpoint potential value, and the standard is the conventional element). It is understood that the same) is improved by 10% as compared with the conventional method.

【0059】以上のように本実施例によれば、製造歩留
を向上させることができる。 (実施例8)次に、実施例6の製造方法の他の例を示
す。
As described above, according to this embodiment, the manufacturing yield can be improved. (Embodiment 8) Next, another example of the manufacturing method of Embodiment 6 will be described.

【0060】アルミナスルーホール基板のランドとスル
ーホール部に、パラジウムと銀の比が13:87である
導体ペーストをスクリーン印刷後900℃で焼成し、片
面上に、酸化鉛15wt%と酸化ホウ素5wt%と酸化
珪素70wt%と酸化アルミニウム5wt%と、アルカ
リ金属酸化物2wt%を無機分中の主成分とするガラス
ペーストをスクリーン印刷後850℃で焼成し、その
後、焼成した基板を真空蒸着機に設置し、所定の真空度
に排気した後、パーマロイを0.1μmの厚さで蒸着し
た。そして、レジスト塗布、独立したパターンの集合体
であるマスクを用いた露光、現像、エッチング、レジス
ト剥離を経て目的形状の素子部を得た。次に、エポキシ
系樹脂を基板全面にスクリーン印刷し硬化した後、各ス
ルーホールを4分割するようにダイシングして図4に示
すような素子を255個得、その後、裏面電極にリード
線をはんだ付けした。
A conductive paste having a palladium: silver ratio of 13:87 was screen-printed on the lands and through-holes of the alumina through-hole substrate and baked at 900 ° C., and 15 wt% lead oxide and 5 wt% boron oxide were formed on one surface. %, Silicon oxide 70 wt%, aluminum oxide 5 wt%, and a glass paste containing alkali metal oxide 2 wt% as a main component in the inorganic content is screen-printed and fired at 850 ° C., and then the fired substrate is placed in a vacuum deposition machine. After being installed and evacuated to a predetermined vacuum degree, permalloy was vapor-deposited to a thickness of 0.1 μm. Then, an element portion having a target shape was obtained through resist coating, exposure using a mask which is an aggregate of independent patterns, development, etching, and resist stripping. Next, epoxy resin is screen-printed on the entire surface of the substrate and cured, and then each through hole is diced so as to be divided into four to obtain 255 elements as shown in FIG. 4. After that, a lead wire is soldered to the back electrode. I attached it.

【0061】本実施例8において得られた磁気抵抗効果
素子においても、実施例7と同様の製造歩留の結果が得
られた。
Also in the magnetoresistive effect element obtained in this Example 8, the same production yield result as in Example 7 was obtained.

【0062】[0062]

【発明の効果】以上のように本発明によれば、従来基板
の反りが大きかったがために生じた、パターン形状のば
らつきを除去することができ、特性の精度と歩留が向上
した電子部品及びその製造方法を実現することができ
る。
As described above, according to the present invention, it is possible to eliminate the variation in the pattern shape caused by the large warp of the conventional substrate, and improve the accuracy of the characteristics and the yield. And the manufacturing method thereof can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による磁気抵抗効果素子の断
面図
FIG. 1 is a sectional view of a magnetoresistive effect element according to an embodiment of the present invention.

【図2】同磁気抵抗効果素子の上面図FIG. 2 is a top view of the magnetoresistive effect element.

【図3】本発明及び従来の磁気抵抗効果素子において、
各素子の基板分割前の位置を示したアルミナスルーホー
ル基板の上面図
FIG. 3 shows a magnetoresistive element according to the present invention and a conventional magnetoresistive element.
Top view of alumina through-hole substrate showing the position of each element before substrate division

【図4】本発明の他の実施例による磁気抵抗効果素子の
断面図
FIG. 4 is a sectional view of a magnetoresistive effect element according to another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 アルミナ基板 2 ガラスグレーズ 3 金属薄膜 4 電極 1 Alumina substrate 2 Glass glaze 3 Metal thin film 4 Electrode

Claims (15)

【特許請求の範囲】[Claims] 【請求項1】アルミナ基板と、このアルミナ基板の片面
上に形成されかつ酸化鉛と酸化ホウ素と酸化珪素と酸化
アルミニウムを主成分とするガラスグレーズと、前記ア
ルミナ基板の両端部に形成された電極と、前記ガラスグ
レーズ上に電極と接続するように形成した所定の形状の
導電体または誘電体もしくは抵抗体などの薄膜からなる
素子部とからなる電子部品。
1. An alumina substrate, a glass glaze formed on one surface of the alumina substrate and containing lead oxide, boron oxide, silicon oxide, and aluminum oxide as main components, and electrodes formed on both ends of the alumina substrate. And an element part formed of a thin film such as a conductor or a dielectric or a resistor having a predetermined shape, which is formed on the glass glaze so as to be connected to the electrode.
【請求項2】アルミナ基板と、このアルミナ基板の片面
上に形成されたアルカリフリーのガラスグレーズと、前
記アルミナ基板の両端部に形成された電極と、前記ガラ
スグレーズ上に電極と接続するように形成された所定の
形状の導電体または誘電体もしくは抵抗体などの薄膜か
らなる素子部とからなる電子部品。
2. An alumina substrate, an alkali-free glass glaze formed on one surface of the alumina substrate, electrodes formed at both ends of the alumina substrate, and an electrode formed on the glass glaze so as to be connected to each other. An electronic component including an element portion formed of a formed conductor or a thin film such as a dielectric or a resistor.
【請求項3】アルミナ基板と、このアルミナ基板の両端
部に形成された電極と、一部が電極に重なる、あるいは
電極と面一に接触するように前記アルミナ基板の片面上
に形成されかつ酸化鉛と酸化ホウ素と酸化珪素と酸化ア
ルミニウムを主成分とするガラスグレーズと、前記電極
と接続するようにガラスグレーズ上に形成された所定の
形状の導電体または誘電体もしくは抵抗体などの薄膜か
らなる素子部とからなる電子部品。
3. An alumina substrate and electrodes formed on both ends of the alumina substrate, and formed on one side of the alumina substrate so as to partially overlap the electrode or come into flush contact with the electrode and to be oxidized. It consists of a glass glaze containing lead, boron oxide, silicon oxide, and aluminum oxide as main components, and a thin film such as a conductor or a dielectric or resistor of a predetermined shape formed on the glass glaze so as to be connected to the electrode. An electronic component consisting of an element section.
【請求項4】グレーズの表面粗度が0.20μmRa以
下であることを特徴とする請求項1または3記載の電子
部品。
4. The electronic component according to claim 1, wherein the surface roughness of the glaze is 0.20 μmRa or less.
【請求項5】ガラスグレーズには、酸化鉛が10〜70
wt%、酸化珪素が30〜80wt%の範囲で、かつ両
者の和が60wt%以上100wt%未満含まれること
を特徴とする請求項1または3記載の電子部品。
5. The glass glaze contains 10 to 70 lead oxide.
The electronic component according to claim 1 or 3, characterized in that the wt% and silicon oxide are in the range of 30 to 80 wt%, and the sum of the two is contained in an amount of 60 wt% or more and less than 100 wt%.
【請求項6】ガラスグレーズ中に含まれるアルカリ金属
の酸化物が2wt%以下であることを特徴とする請求項
1または3記載の電子部品。
6. The electronic component according to claim 1, wherein the content of the alkali metal oxide contained in the glass glaze is 2 wt% or less.
【請求項7】素子部のパターン幅が50μm以下である
ことを特徴とする請求項2記載の電子部品。
7. The electronic component according to claim 2, wherein the pattern width of the element portion is 50 μm or less.
【請求項8】素子部のパターン幅のばらつきが2%以内
であることを特徴とする請求項2記載の電子部品。
8. The electronic component according to claim 2, wherein the variation in the pattern width of the element portion is within 2%.
【請求項9】アルミナ基板の片面上に酸化鉛と酸化ホウ
素と酸化珪素を主成分とするガラスペーストをスクリー
ン印刷後焼成する工程と、アルミナ基板の両端部に電極
として導体ペーストをスクリーン印刷後焼成する工程
と、グレーズ上に導電体または誘電体もしくは抵抗体な
どの薄膜を形成し、所定形状の素子部を形成する工程と
を有することを特徴とする電子部品の製造方法。
9. A step of baking a glass paste containing lead oxide, boron oxide and silicon oxide as main components on one surface of an alumina substrate after screen printing, and a conductor paste as an electrode on both ends of the alumina substrate after screen printing and baking. And a step of forming a thin film such as a conductor or a dielectric or a resistor on the glaze to form an element portion having a predetermined shape.
【請求項10】アルミナの平均粒径が異なるグリーンシ
ートを二枚以上積層圧着した後焼成して一定方向に一定
量反ったアルミナ基板を得る工程と、このアルミナ基板
の片面上に酸化珪素、酸化バリウム等を主成分とするガ
ラスペーストをスクリーン印刷した後、焼成して反りの
小さいグレーズドアルミナ基板を得る工程と、このグレ
ーズドアルミナ基板の一部に電極として導体を形成する
工程と、グレーズ上に導電体または誘電体もしくは抵抗
体などの薄膜を形成し、所定形状の電極と接した素子部
を形成する工程とを有することを特徴とする電子部品の
製造方法。
10. A step of laminating and press-bonding two or more green sheets having different average particle diameters of alumina, followed by firing to obtain an alumina substrate having a certain amount of warpage in a certain direction, and silicon oxide and oxide on one side of the alumina substrate. After screen-printing a glass paste containing barium or the like as a main component, firing it to obtain a warped small glaze alumina substrate, forming a conductor as an electrode on a part of this glaze alumina substrate, and conducting on the glaze. And a step of forming a thin film such as a body or a dielectric or a resistor, and forming an element part in contact with an electrode having a predetermined shape.
【請求項11】アルミナ基板に電極として導体ペースト
をスクリーン印刷後焼成する工程と、一部が電極に重な
る、あるいは電極と面一に接触するようにアルミナ基板
の片面上に酸化鉛と酸化ホウ素と酸化珪素と酸化アルミ
ニウムを主成分とするガラスペーストをスクリーン印刷
後焼成する工程と、ガラスグレーズのある面に導電体ま
たは誘電体もしくは抵抗体などの薄膜を形成する工程
と、この薄膜から電極と接続するように所定形状の素子
部を形成する工程とを有することを特徴とする電子部品
の製造方法。
11. A step of screen-printing a conductor paste as an electrode on an alumina substrate, followed by firing, and lead oxide and boron oxide on one surface of the alumina substrate so as to partially overlap the electrode or make flush contact with the electrode. Screen-printing a glass paste containing silicon oxide and aluminum oxide as the main components, baking it, forming a thin film such as a conductor, dielectric, or resistor on the glass glaze surface, and connecting the thin film to an electrode And a step of forming an element portion having a predetermined shape.
【請求項12】アルミナ基板と、このアルミナ基板の片
面上に形成された酸化鉛と酸化ホウ素と酸化珪素を主成
分とするガラスグレーズとからなる状態の基板の反りが
20μm以下であることを特徴とする請求項9記載の電
子部品の製造方法。
12. A warp of a substrate consisting of an alumina substrate and a glass glaze containing lead oxide, boron oxide and silicon oxide as main components formed on one surface of the alumina substrate is 20 μm or less. The method for manufacturing an electronic component according to claim 9.
【請求項13】ガラスペーストの焼成温度が600℃か
ら950℃であることを特徴とする請求項9または11
記載の電子部品の製造方法。
13. The firing temperature of the glass paste is 600 ° C. to 950 ° C., as claimed in claim 9 or 11.
A method for manufacturing the described electronic component.
【請求項14】アルミナ基板と、このアルミナ基板の片
面上に形成された酸化珪素、酸化バリウム等を主成分と
するアルカリフリーのガラスグレーズで構成される基板
の反りが20μm以下であることを特徴とする請求項1
0記載の電子部品の製造方法。
14. A warp of an alumina substrate and a substrate composed of an alkali-free glass glaze containing silicon oxide, barium oxide or the like as a main component formed on one surface of the alumina substrate has a warp of 20 μm or less. Claim 1
0. A method of manufacturing an electronic component according to item 0.
【請求項15】反りが20μm以下であるグレーズドア
ルミナ基板を、アルミナ基板の凹面上に酸化珪素、酸化
バリウム等を主成分とするガラス時の熱膨張係数がアル
ミナより小さいガラスペーストをスクリーン印刷した後
1000℃以上で焼成して得ることを特徴とする請求項
10記載の電子部品の製造方法。
15. A screened glass paste having a warp of 20 μm or less is printed on the concave surface of the alumina substrate, the glass paste containing silicon oxide, barium oxide or the like as a main component and having a coefficient of thermal expansion smaller than that of alumina. The method of manufacturing an electronic component according to claim 10, wherein the method is obtained by firing at 1000 ° C. or higher.
JP4076820A 1992-03-31 1992-03-31 Electronic component and method of manufacturing the same Expired - Fee Related JP2713005B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4076820A JP2713005B2 (en) 1992-03-31 1992-03-31 Electronic component and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4076820A JP2713005B2 (en) 1992-03-31 1992-03-31 Electronic component and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH05283556A true JPH05283556A (en) 1993-10-29
JP2713005B2 JP2713005B2 (en) 1998-02-16

Family

ID=13616312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4076820A Expired - Fee Related JP2713005B2 (en) 1992-03-31 1992-03-31 Electronic component and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP2713005B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012235080A (en) * 2011-04-29 2012-11-29 Samsung Electro-Mechanics Co Ltd Chip-type coil component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012235080A (en) * 2011-04-29 2012-11-29 Samsung Electro-Mechanics Co Ltd Chip-type coil component

Also Published As

Publication number Publication date
JP2713005B2 (en) 1998-02-16

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