JPH05275605A - Resin sealed semiconductor device and manufacture thereof - Google Patents

Resin sealed semiconductor device and manufacture thereof

Info

Publication number
JPH05275605A
JPH05275605A JP6766892A JP6766892A JPH05275605A JP H05275605 A JPH05275605 A JP H05275605A JP 6766892 A JP6766892 A JP 6766892A JP 6766892 A JP6766892 A JP 6766892A JP H05275605 A JPH05275605 A JP H05275605A
Authority
JP
Japan
Prior art keywords
lead frame
resin
semiconductor device
reinforcing plate
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6766892A
Other languages
Japanese (ja)
Inventor
Shoichi Furuhata
昌一 古畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP6766892A priority Critical patent/JPH05275605A/en
Publication of JPH05275605A publication Critical patent/JPH05275605A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To place no limit on the design of pattern of a lead frame, and to handle the lead frame safely in the manufacture of a semiconductor device. CONSTITUTION:On the assembled body on which a semiconductor chip 2 is mounted on the die pad 1a of a lead frame 1 and a wire 3 is bonded between the semiconductor chip and a lead 1b, the lead 1b is maintained in such a manner that its hanging down is prevented by adhering in advance an insulative reinforcement plate 4 on the region, to be resin-sealed, of the lead frame 1, and a package 6 is molded and resin-sealed by a transfer molding method in the above-mentioned state.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、リードフレームを用い
て組立てた樹脂封止形半導体装置、およびその製造方法
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device assembled using a lead frame and a method for manufacturing the same.

【0002】[0002]

【従来の技術】頭記した樹脂封止形半導体装置として、
リードフレームのダイパッドに半導体チップをマウント
し、さらに半導体チップとリードとの間にワイヤボンデ
ィングを施した組立体をトランスファ成形法により樹脂
封止した構成のものが周知である。
2. Description of the Related Art As the above-mentioned resin-sealed semiconductor device,
It is well known that a semiconductor chip is mounted on a die pad of a lead frame, and an assembly obtained by wire bonding between the semiconductor chip and the leads is resin-sealed by a transfer molding method.

【0003】一方、前記リードフレームはよく知られて
いるように厚さの薄い金属製リボン(例えば肉厚0.5mm
程度)にダイパッド,リード,タイバー,連結条などを
パターン形成したものであり、半導体チップの搭載後に
樹脂封止を行う際には、リードフレームをモールド金型
の上型と下型との間にの合わせ面に挟持しして所定に位
置に保持し、この状態で金型のキャビティに注型樹脂を
圧入して樹脂封止を行うようにしている。
On the other hand, as is well known, the lead frame has a thin metal ribbon (for example, a wall thickness of 0.5 mm).
Pattern is formed with die pads, leads, tie bars, connecting strips, etc., and when the resin is sealed after mounting the semiconductor chip, the lead frame is placed between the upper die and the lower die of the molding die. It is sandwiched between the mating surfaces and held at a predetermined position, and in this state, the casting resin is press-fitted into the cavity of the die for resin sealing.

【0004】[0004]

【発明が解決しようとする課題】ところで、前記のよう
にリードフレームの組立体をモールド金型にセットして
トランスファ成形を行う場合に、従来のリードフレーム
では取扱い面で次記のような難点がある。すなわち、前
記のようにリードフレームは極く薄い金属リボンで作ら
れたものであり、ダイパッドは少なくとも両端の二箇所
で吊り細条を介して連結帯に連結されているが、これに
対してダイパッドの周域を取り囲むように配列して形成
されたリードは、先端が個々に分断されてタイバーで相
互連結されている。このために半導体チップが小面積
で、かつリード本数も少ないダイオード,トランジスタ
などではリード長も短くてさほど問題にはならないが、
チップ面積が大きく、かつリード本数も多い大形のIC
などでは、ダイパッドの周域に配列した各リードの自由
端長さ(タイバーから先端までの長さ寸法)が長くな
る。特に、パッケージからリードを同じ方向に引出した
シングルインラインパッケージでは、パッケージ内でリ
ードの一部がダイパッドの側方を迂回してリード引出し
端と反対側の箇所まで延在しているため、前記したリー
ドの自由端長さ寸法がさらに長くなる。
By the way, when the lead frame assembly is set in the molding die for transfer molding as described above, the conventional lead frame has the following problems in handling. is there. That is, as described above, the lead frame is made of an extremely thin metal ribbon, and the die pad is connected to the connecting strip through the suspending strips at at least two places on both ends. The leads formed by arranging so as to surround the peripheral region of are separated from each other at their tips and are interconnected by tie bars. For this reason, the semiconductor chip has a small area and the number of leads is small, and the lead length is short in a diode or a transistor, which is not a big problem.
Large IC with a large chip area and a large number of leads
In such a case, the free end length (length from the tie bar to the tip) of each lead arranged in the peripheral area of the die pad becomes long. In particular, in a single in-line package in which leads are pulled out in the same direction from the package, some of the leads bypass the sides of the die pad and extend to the location on the opposite side of the lead lead-out end. The length of the free end of the lead becomes even longer.

【0005】したがって、自由端長さ寸法の長いリード
は自重に耐えられなくなってリードの先端が垂れ下がる
ようになる。このために、リードフレームに半導体チッ
プのマウント,ワイヤボンディングを施した組立後の状
態でリードフレームを次工程へ搬送するために水平姿勢
に持ち上げると、リード先端の垂れ下がりによりワイヤ
が引っ張られて断線したりするトラブルが生じる。ま
た、モールド工程でリードフレームの組立体を金型にセ
ットした状態でも、前記のようなリードの垂れ下がりが
あるとリード先端が金型のキャビティ底面に接触し、成
形後の状態ではリードが樹脂封止層の表面に露出してし
まうといった不具合が発生する。
Therefore, a lead having a long free end length cannot bear its own weight, and the tip of the lead hangs down. For this reason, if the lead frame is lifted in a horizontal position to be transported to the next step after mounting the semiconductor chip and wire bonding on the lead frame, the wire is pulled and broken due to the hanging of the lead tip. Trouble occurs. Even when the lead frame assembly is set in the mold during the molding process, if the lead droops as described above, the lead tips will contact the cavity bottom surface of the mold, and after molding, the leads will be sealed with resin. There is a problem that it is exposed on the surface of the stop layer.

【0006】そのために、従来ではリードフレームの板
厚を厚くしたり、リードの幅寸法を広くして剛性を高め
ることで対処しているが、板厚の厚いリードフレームを
採用することは材料費が嵩むし、個々のリード幅寸法を
大きくとるとリードフレームのパターン設計の自由度が
制限されるなどの問題が残る。本発明は上記の点にかん
がみなされたものであり、その目的は前記課題を解決
し、リードフレームのパターン設計に制限を加えること
なく、しかも半導体装置の製造工程ではリードフレーム
を安全に取り扱えることができるようにした樹脂封止形
半導体装置、およびその製造方法を提供することにあ
る。
For this reason, conventionally, the lead frame is made thicker or the width of the lead is made wider to increase the rigidity. However, it is costly to use a lead frame having a thick plate. However, if the individual lead widths are increased, the degree of freedom in designing the lead frame pattern remains limited. The present invention has been made in view of the above points, and an object of the present invention is to solve the above-mentioned problems, to allow the lead frame to be safely handled in the manufacturing process of a semiconductor device without limiting the pattern design of the lead frame. It is an object of the present invention to provide a resin-encapsulated semiconductor device and a method for manufacturing the same.

【0007】[0007]

【課題を解決するための手段】上記目的は、本発明によ
り、封止樹脂で覆われるリードフレームの領域に絶縁材
の補強板を貼り合わせて構成することにより達成され
る。また、前記構成の実施態様として次記の構成があ
る。 (1)補強板には、リードフレームのダイパッドとの対
向面域に熱放散用の窓穴を開口する。
According to the present invention, the above object can be achieved by bonding a reinforcing plate made of an insulating material to a region of a lead frame covered with a sealing resin. Further, there is the following configuration as an embodiment of the above configuration. (1) In the reinforcing plate, a window hole for heat dissipation is opened in a surface area of the lead frame facing the die pad.

【0008】(2)補強板をリードフレームの裏面側に
貼り合わせる。 (3)補強板を半導体チップをマウントしたリードフレ
ームの主面側に貼り合わせる。 一方、前記構成の樹脂封止形半導体装置は、本発明によ
り、リードフレームに補強板を貼り合わせる工程と、リ
ードフレームに半導体チップを実装する工程と、補強板
を貼り合わせたチップ実装済みリードフレームの組立体
をトランスファ成形法により樹脂封止するモールド工程
と、リードフレームの不要部分をカットするリード加工
工程とで製造するものとする。
(2) A reinforcing plate is attached to the back side of the lead frame. (3) The reinforcing plate is attached to the main surface side of the lead frame on which the semiconductor chip is mounted. On the other hand, according to the present invention, the resin-sealed semiconductor device having the above-described structure includes a step of attaching a reinforcing plate to a lead frame, a step of mounting a semiconductor chip on the lead frame, and a chip mounted lead frame in which the reinforcing plate is attached The assembly is manufactured by a molding step of resin-sealing the assembly by a transfer molding method and a lead processing step of cutting unnecessary portions of the lead frame.

【0009】そして、前記方法の実施態様として、補強
板に外縁より引出した連結細条を設け、モールド工程で
は前記連結細条をモールド金型の合わせ面に挟持してリ
ードフレームを金型内の所定位置に位置決め支持し、リ
ード加工工程で封止樹脂層からはみ出した連結細条をカ
ットする方法がある。
As an embodiment of the above-mentioned method, a reinforcing strip is provided with connecting strips drawn from the outer edge, and in the molding step, the connecting strips are sandwiched between the mating surfaces of the mold and the lead frame is placed inside the die. There is a method of positioning and supporting it at a predetermined position and cutting the connecting strip protruding from the sealing resin layer in the lead processing step.

【0010】[0010]

【作用】上記のようにリードフレームに絶縁材の補強板
を貼り合わせることにより、リードフレームにパターン
形成されたリードの自由端は補強板に支えられて自重で
垂れ下がることがなくなる。したがって半導体チップを
実装した後のリードフレームの取扱い時にボンディング
ワイヤが不当に引っ張られて断線したり、トランスファ
成形により樹脂封止した状態でリードがパッケージの外
面に露出するなどといった欠陥が防止される。また、リ
ードフレームのダイパッドと対向する補強板の部位に熱
放散用の窓穴を明けておくことにより、半導体チップの
発熱は前記の窓穴を通して外部に熱放散するので、補強
板が半導体チップの熱放散性を阻害するおそれはない。
さらに、補強板から引出した連結細条は、リードフレー
ムをトランスファ成形用金型にセットする際の位置決め
部材として有効に働く。
By attaching the reinforcing plate made of an insulating material to the lead frame as described above, the free ends of the leads patterned on the lead frame are supported by the reinforcing plate and do not hang down by its own weight. Therefore, it is possible to prevent defects such as the bonding wire being unduly pulled and broken during handling of the lead frame after mounting the semiconductor chip, and the leads being exposed to the outer surface of the package in a resin-sealed state by transfer molding. Further, by forming a window for heat dissipation in the portion of the reinforcing plate facing the die pad of the lead frame, the heat generated by the semiconductor chip is dissipated to the outside through the window hole, so the reinforcing plate is There is no risk of impairing heat dissipation.
Further, the connecting strips pulled out from the reinforcing plate work effectively as a positioning member when setting the lead frame in the transfer molding die.

【0011】[0011]

【実施例】以下本発明の実施例を図面に基づいて説明す
る。まず、図1,図2は本発明により製造されたシング
ルインラインパッケージの樹脂封止形半導体装置の構造
を示すものである。図において、1はリードフレーム、
2はリードフレーム1のダイパッド1aにマウントした
半導体チップ、3は半導体チップ2とダイパッド1aの
周域に配列してパターン形成された各リード1bとの間
を接続したボンディングワイヤ、4はリードフレーム1
の裏面側に接着剤5で貼り合わせた例えばエポシキ樹脂
などの絶縁材よりなる平板状の補強板、6はリードフレ
ーム1の主要部,半導体チップ2,ボンディングワイヤ
3,補強板4を覆って樹脂封止したパッケージである。
なお、前記補強板4には、リードフレーム1のダイパッ
ド1aと対向する部位に熱放散用の窓穴4aが開口して
いる。
Embodiments of the present invention will be described below with reference to the drawings. First, FIGS. 1 and 2 show the structure of a single-in-line package resin-sealed semiconductor device manufactured by the present invention. In the figure, 1 is a lead frame,
Reference numeral 2 is a semiconductor chip mounted on the die pad 1a of the lead frame 1, 3 is a bonding wire connecting between the semiconductor chip 2 and each of the leads 1b patterned and arranged in the peripheral region of the die pad 1a, and 4 is the lead frame 1
A flat plate-like reinforcing plate made of an insulating material such as epoxy resin, which is attached to the back side of the substrate with an adhesive 5, 6 is a resin covering the main part of the lead frame 1, the semiconductor chip 2, the bonding wires 3, and the reinforcing plate 4. It is a sealed package.
A window hole 4a for heat dissipation is formed in the reinforcing plate 4 at a portion facing the die pad 1a of the lead frame 1.

【0012】また、図3は前記半導体装置の組立て用に
採用したリードフレーム1の原形パターン図であり、前
記したダイパッド1a,先端をダイパッド1aの周囲に
対向させて左右に一列に配列した多数本のリード1bの
ほかに、各リード1bの間を相互連結したタイバー1
c,連結条(サイドレール)1d,ダイパッド1aの一
端に連結したリード1e,および他端に連結した支持片
1fが図示のようにパターン形成されている。
FIG. 3 is an original pattern diagram of the lead frame 1 used for assembling the semiconductor device. The die pad 1a described above is arranged in a row on the left and right with the tips facing the periphery of the die pad 1a. In addition to the lead 1b, the tie bar 1 interconnected between the leads 1b
c, a connecting strip (side rail) 1d, a lead 1e connected to one end of the die pad 1a, and a support piece 1f connected to the other end are patterned as shown.

【0013】一方、補強板4の原形パターンは図4に示
すごとくであり、補強板4の中央部位には先記した熱放
散用の窓穴4aが開口し、さらに外縁の両端から引出し
た細状4bを介して連結条(サイドレール)4cに連結
されている。次に、図3,図4に示したリードフレーム
1,補強板4を使用して組立てた先記樹脂封止形半導体
装置の製造方法を述べる。まず、最初の工程では図3の
リードフレーム1と図4の補強板4を互いに位置決めし
て重ね、接着剤で両者の間を貼り合わせる。このように
リードフレーム1と補強板4を貼り合わせることによ
り、リードフレーム1のダイパッド周域に並ぶ各リード
1bが補強板4に支えられて同一面上に保持される。し
たがって、リード1bのタイバーから先の自由端が自重
で垂れ下がるといって不具合は一切生じない。
On the other hand, the original pattern of the reinforcing plate 4 is as shown in FIG. 4, and the above-mentioned window hole 4a for heat dissipation is opened in the central portion of the reinforcing plate 4, and the thin pattern is drawn from both ends of the outer edge. It is connected to the connecting strip (side rail) 4c through the shape 4b. Next, a method of manufacturing the above-mentioned resin-sealed semiconductor device assembled using the lead frame 1 and the reinforcing plate 4 shown in FIGS. 3 and 4 will be described. First, in the first step, the lead frame 1 of FIG. 3 and the reinforcing plate 4 of FIG. 4 are positioned and overlapped with each other, and the two are bonded with an adhesive. By bonding the lead frame 1 and the reinforcing plate 4 in this manner, the leads 1b arranged in the peripheral area of the die pad of the lead frame 1 are supported by the reinforcing plate 4 and held on the same surface. Therefore, no trouble occurs even if the free end of the lead 1b beyond the tie bar hangs down by its own weight.

【0014】次にリードフレーム1と補強板4との貼り
合わせ体を半導体チップ実装工程に送り込み、ここでリ
ードフレーム1のダイパッド1aに半導体チップ2をマ
ウントし、さらに半導体チップ2の電極とダイパッドの
周域に並ぶ各リード1bとの間をワイヤボンディングし
て接続する。このリードフレームの組立状態を図5に示
す。
Next, the bonded body of the lead frame 1 and the reinforcing plate 4 is sent to the semiconductor chip mounting step, where the semiconductor chip 2 is mounted on the die pad 1a of the lead frame 1, and the electrodes of the semiconductor chip 2 and the die pad are mounted. The leads 1b arranged in the peripheral region are connected by wire bonding. The assembled state of this lead frame is shown in FIG.

【0015】半導体チップの実装が済むと、次に図5に
示したリードフレーム組立体をモールド工程に移し、図
6で示すようにトランスファ成形用金型の上型7と下型
8との間に図5のリードフレーム組立体をセットする。
ここで、リードフレーム1の各リード1b,および補強
板4の細条4bを支持部材として上型7と下型8との間
に挟持し、半導体チップ2をマウントしたリードフレー
ム1の主要部を金型キャビティ内の所定位置に位置決め
保持させる。そして、金型のキャビティに注型樹脂9を
注入して図5の鎖線領域に樹脂パッケージ6を成形して
半導体チップ2を含む組立体の主要部を樹脂封止する。
なお、リードフレーム1を金型内にセットした状態では
リードフレーム1が補強板4に支えられているので、各
リードの自由先端が金型のキャビティ内で垂れ下がるこ
とがなく、これにより樹脂封止が確実に行える。
After mounting the semiconductor chip, the lead frame assembly shown in FIG. 5 is moved to a molding step, and as shown in FIG. 6, the lead frame assembly is placed between the upper die 7 and the lower die 8 of the transfer molding die. Set the lead frame assembly shown in FIG.
Here, each lead 1b of the lead frame 1 and the strip 4b of the reinforcing plate 4 are sandwiched between the upper mold 7 and the lower mold 8 as a supporting member, and the main part of the lead frame 1 on which the semiconductor chip 2 is mounted is mounted. Position and hold it in place in the mold cavity. Then, the casting resin 9 is injected into the cavity of the mold, the resin package 6 is molded in the chain line area of FIG. 5, and the main part of the assembly including the semiconductor chip 2 is resin-sealed.
Since the lead frame 1 is supported by the reinforcing plate 4 when the lead frame 1 is set in the mold, the free tips of the leads do not hang down in the cavity of the mold. Can be done reliably.

【0016】モールド工程が済むめば、組立体を金型か
ら取出した後にリード加工工程に移し、ここでリードフ
レーム1の不要な部分であるタイバー1c,連結条1
d,およびパッケージ6の外面から突出した補強板4の
細条4bをカットし、さらにバリ取りなどの仕上げ加工
を施して図1,図2に示した半導体装置の製品が完成す
る。
When the molding process is completed, the assembly is taken out of the mold and then moved to the lead processing process, where the tie bar 1c and the connecting strip 1 which are unnecessary portions of the lead frame 1 are removed.
d, and the strips 4b of the reinforcing plate 4 protruding from the outer surface of the package 6 are cut, and finishing processing such as deburring is performed to complete the product of the semiconductor device shown in FIGS.

【0017】なお、前記実施例では、補強板4をリード
フレーム1の裏面側に貼り合わせた例を述べたが、応用
実施例として補強板4を半導体チップ2をマウントした
リードフレーム1の主面側に貼り合わせて実施すること
もできる。この場合にはボンディングワイヤ3と補強板
4との干渉を避けるために、あらかじめ窓穴4aを大き
く開口しておく必要がある。このように、補強板4をリ
ードフレーム1の主面側に張り合わせた構成とすれば、
リードフレーム1の裏面とパッケージ6の底面との間の
距離を縮めることができ、これにより半導体装置をヒー
トシンクなどに取付けた使用状態での放熱性を改善でき
る。
Although the reinforcing plate 4 is attached to the back surface of the lead frame 1 in the above embodiment, the main surface of the lead frame 1 on which the semiconductor chip 2 is mounted on the reinforcing plate 4 is an applied embodiment. It can also be attached to the side. In this case, in order to avoid the interference between the bonding wire 3 and the reinforcing plate 4, it is necessary to open the window hole 4a in advance. In this way, if the reinforcing plate 4 is attached to the main surface side of the lead frame 1,
The distance between the back surface of the lead frame 1 and the bottom surface of the package 6 can be shortened, which can improve heat dissipation when the semiconductor device is mounted on a heat sink or the like.

【0018】[0018]

【発明の効果】以上述べたように、本発明によれば、リ
ードフレームに絶縁材の補強板を貼り合わせて樹脂封止
形半導体装置を組立構成したことにより、半導体装置の
製造工程でリードフレームを取り扱う場合に、リードフ
レームにパターン形成されたリードの先端が自重で垂れ
下がるといった状態が生じなくなり、これによりリード
先端に接続されたボンディングワイヤの断線,あるいは
トランスファモールドで成形された封止樹脂層の外面に
リードが露出するなどの欠陥を未然に防止することがで
き、製品の歩留り向上が図れる。
As described above, according to the present invention, the resin-encapsulated semiconductor device is assembled by bonding the reinforcing plate of the insulating material to the lead frame, and the lead frame is manufactured in the manufacturing process of the semiconductor device. When handling, the tip of the lead formed in the pattern on the lead frame does not hang down by its own weight, which causes the disconnection of the bonding wire connected to the tip of the lead or the encapsulation resin layer formed by transfer molding. It is possible to prevent defects such as the leads being exposed on the outer surface, and improve the product yield.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例による樹脂封止形半導体装置の
組立構造を示す横断平面図
FIG. 1 is a cross-sectional plan view showing an assembly structure of a resin-sealed semiconductor device according to an embodiment of the present invention.

【図2】図1の矢視X−X断面図FIG. 2 is a sectional view taken along line XX of FIG.

【図3】図1の半導体装置に使用するリードフレームの
原形パターン図
3 is an original pattern diagram of a lead frame used in the semiconductor device of FIG.

【図4】図1の半導体装置に使用する補強板の原形パタ
ーン図
FIG. 4 is an original pattern diagram of a reinforcing plate used in the semiconductor device of FIG.

【図5】リードフレームに半導体チップを実装した組立
状態の平面図
FIG. 5 is a plan view of an assembled state in which a semiconductor chip is mounted on a lead frame.

【図6】図5の組立体を樹脂封止するモールド工程の状
態図
6 is a state diagram of a molding process for resin-sealing the assembly of FIG.

【符号の説明】[Explanation of symbols]

1 リードフレーム 1a ダイパッド 1b リード 1c タイバー 1d 連結条 2 半導体チップ 3 ボンディングワイヤ 4 補強板 4a 熱放散用窓穴 4c 連結細条 5 接着剤 6 樹脂パッケージ 7 トランスファ成形用金型の上型 8 トランスファ成形用金型の下型 1 Lead frame 1a Die pad 1b Lead 1c Tie bar 1d Connecting strip 2 Semiconductor chip 3 Bonding wire 4 Reinforcing plate 4a Heat dissipation window hole 4c Connecting strip 5 Adhesive 6 Resin package 7 Upper die for transfer molding 8 For transfer molding Lower mold of mold

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】リードフレームのダイパッドに半導体チッ
プをマウントし、かつ半導体チップとリードとの間にワ
イヤボンディングを施した組立体を封止樹脂で覆った樹
脂封止形半導体装置において、封止樹脂で覆われるリー
ドフレームの領域に絶縁材の補強板を貼り合わせて構成
したことを特徴とする樹脂封止形半導体装置。
1. A resin-encapsulated semiconductor device in which a semiconductor chip is mounted on a die pad of a lead frame, and an assembly having wire bonding between the semiconductor chip and the lead is covered with a sealing resin. A resin-encapsulated semiconductor device, characterized in that a reinforcing plate made of an insulating material is bonded to an area of a lead frame covered with.
【請求項2】請求項1記載の樹脂封止形半導体装置にお
いて、補強板のダイパッドとの対向面域に熱放散用の窓
穴を開口したことを特徴とする樹脂封止形半導体装置。
2. The resin-encapsulated semiconductor device according to claim 1, wherein a window hole for heat dissipation is opened in a surface area of the reinforcing plate facing the die pad.
【請求項3】請求項1,2記載の樹脂封止形半導体装置
において、補強板をリードフレームの裏面側に貼り合わ
せたことを特徴とする樹脂封止形半導体装置。
3. The resin-encapsulated semiconductor device according to claim 1, wherein a reinforcing plate is attached to the back side of the lead frame.
【請求項4】請求項1,2記載の樹脂封止形半導体装置
において、補強板を半導体チップをマウントしたリード
フレームの主面側に貼り合わせたことを特徴とする樹脂
封止形半導体装置。
4. The resin-encapsulated semiconductor device according to claim 1, wherein a reinforcing plate is attached to the main surface side of the lead frame on which the semiconductor chip is mounted.
【請求項5】請求項1記載の樹脂封止形半導体装置の製
造方法あって、リードフレームに補強板を貼り合わせる
工程と、リードフレームに半導体チップを実装する工程
と、補強板を貼り合わせたチップ実装済みリードフレー
ムの組立体をトランスファ成形法により樹脂封止するモ
ールド工程と、リードフレームの不要部分をカットする
リード加工工程とからなることを特徴とする樹脂封止形
半導体装置の製造方法。
5. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein a step of attaching a reinforcing plate to the lead frame, a step of mounting a semiconductor chip on the lead frame, and an attaching of the reinforcing plate. 1. A method of manufacturing a resin-sealed semiconductor device, comprising: a molding step of resin-sealing an assembly of lead frames on which chips are mounted by a transfer molding method; and a lead processing step of cutting unnecessary portions of the lead frame.
【請求項6】請求項5記載の製造方法において、補強板
にその外縁より引出した連結細条を設け、モールド工程
では前記連結細条をモールド金型の合わせ面に挟持して
リードフレームを金型内の所定位置に位置決め支持し、
リード加工工程で封止樹脂層からはみ出した連結細条を
カットすることを特徴とする樹脂封止形半導体装置の製
造方法。
6. The manufacturing method according to claim 5, wherein the reinforcing plate is provided with connecting strips drawn from the outer edge thereof, and in the molding step, the connecting strips are sandwiched between the mating surfaces of the mold and the lead frame is made of metal. Positioning and supporting at a predetermined position in the mold,
A method of manufacturing a resin-encapsulated semiconductor device, which comprises cutting a connecting strip protruding from an encapsulating resin layer in a lead processing step.
JP6766892A 1992-03-26 1992-03-26 Resin sealed semiconductor device and manufacture thereof Pending JPH05275605A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6766892A JPH05275605A (en) 1992-03-26 1992-03-26 Resin sealed semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6766892A JPH05275605A (en) 1992-03-26 1992-03-26 Resin sealed semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH05275605A true JPH05275605A (en) 1993-10-22

Family

ID=13351616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6766892A Pending JPH05275605A (en) 1992-03-26 1992-03-26 Resin sealed semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH05275605A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671478B2 (en) * 2005-09-02 2010-03-02 Honeywell International Inc. Low height vertical sensor packaging

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671478B2 (en) * 2005-09-02 2010-03-02 Honeywell International Inc. Low height vertical sensor packaging

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