JPH05270968A - Single crystal pulling apparatus and pulling method - Google Patents
Single crystal pulling apparatus and pulling methodInfo
- Publication number
- JPH05270968A JPH05270968A JP9341292A JP9341292A JPH05270968A JP H05270968 A JPH05270968 A JP H05270968A JP 9341292 A JP9341292 A JP 9341292A JP 9341292 A JP9341292 A JP 9341292A JP H05270968 A JPH05270968 A JP H05270968A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- pulling
- dash
- silicon single
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＣＺ（Czochralski）
法による単結晶引上装置およびその引上方法に関するも
のである。The present invention relates to CZ (Czochralski)
The present invention relates to a single crystal pulling apparatus and a pulling method thereof.
【０００２】[0002]
【従来の技術】従来、大口径および長尺の円柱状シリコ
ン単結晶棒の製造に適したＣＺ法は、シリコン融液にシ
リコン単結晶の種子結晶を浸し、この種子結晶を回転さ
せながら徐々に引き上げ、種子結晶と同じ結晶方位の大
口径のシリコン単結晶棒を成長させるものである。この
場合、種子結晶に存在していた転位がシリコン単結晶棒
中に伝播しないように、種子結晶から成長させるとき、
シリコン単結晶棒を一旦細く絞ってから太らせる、いわ
ゆるダッシュズネック（Dash's neck）を形成して、シ
リコン単結晶棒を無転位化させることが行われている。
一方、シリコン単結晶棒は、より大口径化、より長尺化
の傾向にあり、その自重を増大させている。2. Description of the Related Art Conventionally, the CZ method, which is suitable for manufacturing a large-diameter and long cylindrical silicon single crystal ingot, immerses a silicon single crystal seed crystal in a silicon melt and gradually rotates the seed crystal while rotating the seed crystal. It is pulled up to grow a large diameter silicon single crystal ingot having the same crystal orientation as the seed crystal. In this case, when growing from the seed crystal so that the dislocations existing in the seed crystal do not propagate into the silicon single crystal rod,
A silicon single crystal ingot is made into a dislocation-free state by forming a so-called Dash's neck in which the silicon single crystal ingot is narrowed and then thickened.
On the other hand, the silicon single crystal ingot tends to have a larger diameter and a longer length, increasing its own weight.
【０００３】[0003]
【発明が解決しようとする課題】このような従来のＣＺ
法の単結晶引上方法にあっては、ダッシュズネックの細
く絞った直径は３〜４ｍｍ、その長さは数１０ｍｍ、そ
の機械的強度は１００〜２００ｋｇｆ／ｃｍ2であっ
た。この強度はシリコン単結晶棒の引張強度である。し
かしながら、シリコン単結晶棒のダッシュズネックは上
述のごとく絞られているので、材料力学的に弱く、シリ
コン単結晶棒の大口径化、長尺化を制限してしまうとい
う課題があった。一方、ダッシュズネックを限界値を超
えて太くすると、種子結晶中の転位がシリコン単結晶棒
に伝播し、シリコン単結晶棒を無転位化できないという
問題点があった。[Problems to be Solved by the Invention] Such a conventional CZ
In the single crystal pulling method of the above method, the diameter of the dash neck narrowed down was 3 to 4 mm, its length was several tens of mm, and its mechanical strength was 100 to 200 kgf / cm 2 . This strength is the tensile strength of the silicon single crystal rod. However, since the dash's neck of the silicon single crystal rod is narrowed as described above, there is a problem in that it is weak in terms of material dynamics and limits the increase in diameter and length of the silicon single crystal rod. On the other hand, when the dash's neck is made thicker than the limit value, there is a problem that dislocations in the seed crystal propagate to the silicon single crystal rod and the silicon single crystal rod cannot be dislocation-free.
【０００４】そこで、本発明は、シリコン単結晶棒のダ
ッシュズネック部を補強して、その材料力学的強度の向
上を図ることができる単結晶引上装置およびその引上方
法を提供することを、その目的とする。Therefore, the present invention provides a single crystal pulling apparatus and a pulling method for the same which can strengthen the dash neck portion of a silicon single crystal rod to improve the material mechanical strength. , And its purpose.
【０００５】[0005]
【課題を解決するための手段】請求項１に記載の単結晶
引上装置は、結晶融液を保持する坩堝と、種子結晶を把
持し、該種子結晶を上記結晶融液から引き上げつつ、該
種子結晶から該種子結晶より直径の大きい単結晶棒を成
長させる引上機構と、を備えた単結晶引上装置におい
て、上記種子結晶が上記結晶融液の液面から所定距離引
き上げられたとき、該単結晶棒のダッシュズネック部を
取り囲む筒状の型部材と、この型部材の一部が上記単結
晶棒に接触し、該型部材内に液状硬化物を注入する注入
機構と、を備えるものである。A single crystal pulling apparatus according to claim 1, wherein a crucible holding a crystal melt and a seed crystal are held, and the seed crystal is pulled from the crystal melt, In a single crystal pulling apparatus equipped with a pulling mechanism for growing a single crystal rod having a diameter larger than that of the seed crystal, when the seed crystal is pulled a predetermined distance from the liquid surface of the crystal melt, A cylindrical mold member surrounding a dash neck portion of the single crystal ingot, and an injection mechanism for injecting a liquid cured product into the mold member, with a part of the die member contacting the single crystal ingot. It is a thing.
【０００６】また、請求項２に記載の単結晶引上方法
は、単結晶棒のダッシュズネック部、肩部、直胴部を連
続的に形成する単結晶引上方法において、上記単結晶棒
の直胴部の長さが所定距離に達したとき、上記単結晶棒
の肩部に筒状の型部材の下部をダッシュズネック部を取
り囲むように接触させる工程と、液状硬化物を上記型部
材内に注ぎ、上記単結晶棒のダッシュズネック部を該液
状硬化物で覆う工程と、を有するものである。The method for pulling a single crystal according to claim 2 is a method for pulling a single crystal in which a dash neck portion, a shoulder portion and a straight body portion of a single crystal rod are continuously formed. When the length of the straight body portion reaches a predetermined distance, a step of bringing the lower portion of the cylindrical die member into contact with the shoulder portion of the single crystal rod so as to surround the dash's neck portion, and the liquid cured product to the die And the step of pouring it into the member and covering the dash neck portion of the single crystal rod with the liquid cured product.
【０００７】[0007]
【作用】本発明に係る単結晶引上方法にあっては、種子
結晶から単結晶棒のダッシュズネック部、肩部、直胴部
をそれぞれ形成する。そして、所定長さだけ単結晶棒の
直胴部を成長させる。この後、単結晶棒の肩部に型部材
を接触させる。この型部材に液状硬化物を注ぐ。液状硬
化物として、例えばポリ４フッ化エチレン（ＰＴＦ
Ｅ）、ポリフッ化エチレンプロピレン（ＦＥＰ）、ＰＦ
Ａ、ポリクロロトリフルオロエチレン（ＰＣＴＦＥ）、
ＦＲ−ＥＰＴ、ポリエチレン（ＰＥ）、ポリオレフィ
ン、フッ素ゴム（ＦＫＭ）、または、シリコンゴム
（Ｑ）、ポリイミド、ポリピロールなどの熱硬化性樹脂
などがある。液状硬化物は、単結晶棒のダッシュズネッ
ク部に付着しながら、ダッシュズネック部を覆ってい
く。引き上げにより単結晶棒の温度が徐々に下がるの
で、液状硬化物も温度が下がる。液状硬化物がその融点
以下の温度に下がると、液状硬化物は徐々に硬化し始め
る。この硬化により、単結晶棒のダッシュズネック部は
補強される。したがって、単結晶棒のダッシュズネック
部は、材料力学的に強化されるものである。In the method for pulling a single crystal according to the present invention, the dash's neck portion, shoulder portion and straight body portion of a single crystal rod are formed from a seed crystal. Then, the straight body portion of the single crystal ingot is grown by a predetermined length. After that, the mold member is brought into contact with the shoulder portion of the single crystal rod. A liquid cured product is poured into this mold member. As the liquid cured product, for example, polytetrafluoroethylene (PTF)
E), polyfluorinated ethylene propylene (FEP), PF
A, polychlorotrifluoroethylene (PCTFE),
Examples include FR-EPT, polyethylene (PE), polyolefin, fluororubber (FKM), or thermosetting resin such as silicone rubber (Q), polyimide, and polypyrrole. The liquid cured product covers the dash's neck while adhering to the dash's neck of the single crystal rod. Since the temperature of the single crystal ingot is gradually lowered by pulling up, the temperature of the liquid cured product is also lowered. When the temperature of the liquid cured product falls below its melting point, the liquid cured product gradually begins to cure. By this hardening, the dash neck portion of the single crystal rod is reinforced. Therefore, the dash's neck portion of the single crystal ingot is reinforced by material dynamics.
【０００８】[0008]
【実施例】以下、本発明の実施例を図面に基づいて説明
する。図１は本発明の一実施例に係る単結晶引上装置の
断面図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a single crystal pulling apparatus according to an embodiment of the present invention.
【０００９】この図に示すように、チャンバ（図示略）
内には回転自在であって、かつ、昇降自在に坩堝軸１が
直立した状態で設けられている。この坩堝軸１の上端に
は、有底円筒状の黒鉛サセプタ２が固定されている。こ
の黒鉛サセプタ２内には、石英坩堝３が着脱可能に保持
されている。この石英坩堝３も有底円筒状をなしてい
る。この石英坩堝３内には、メルト状態のシリコン融液
４が注入、保持されている。黒鉛サセプタ２の外側に
は、シリコン融液４の加熱用ヒータ５がこの黒鉛サセプ
タ２を取り囲むように配設されている。さらに、石英坩
堝３の上方には、その半径が略一定の（例えば口径８イ
ンチ）シリコン単結晶棒９を引き上げるための引上機構
（図示略）が設けられている。As shown in this figure, a chamber (not shown)
Inside, a crucible shaft 1 is provided in an upright state so as to be rotatable and to move up and down. A cylindrical graphite susceptor 2 having a bottom is fixed to the upper end of the crucible shaft 1. A quartz crucible 3 is detachably held in the graphite susceptor 2. This quartz crucible 3 also has a bottomed cylindrical shape. A silicon melt 4 in a melted state is injected and held in the quartz crucible 3. A heater 5 for heating the silicon melt 4 is disposed outside the graphite susceptor 2 so as to surround the graphite susceptor 2. Further, above the quartz crucible 3, a pulling mechanism (not shown) for pulling up the silicon single crystal ingot 9 having a substantially constant radius (for example, a diameter of 8 inches) is provided.
【００１０】この引上機構によって、引上ワイヤ６が石
英坩堝３の上方で、石英坩堝３と反対方向に回転しつつ
上下動するようになっている。この引上ワイヤ６の先端
には、シードチャック７を介してシリコン単結晶の種子
結晶８が取り付けられている。この種子結晶８を、シリ
コン融液４に浸した後上昇させることにより、種子結晶
８を始点として順次成長したシリコン単結晶棒９がアル
ゴン雰囲気中で引き上げられるものである。この引き上
げの際に、種子結晶８に存在していた転位がシリコン単
結晶棒９中に伝播しないように、種子結晶８から成長さ
せるとき、シリコン単結晶棒９を一旦細く絞ってから太
らせる、いわゆるダッシュズネック部１０を形成して、
シリコン単結晶棒９を無転位化させている。By this pulling mechanism, the pulling wire 6 is moved above the quartz crucible 3 while rotating in the direction opposite to the quartz crucible 3 while moving up and down. A seed crystal 8 of silicon single crystal is attached to the tip of the pulling wire 6 via a seed chuck 7. By dipping this seed crystal 8 in the silicon melt 4 and then raising it, the silicon single crystal rods 9 sequentially grown starting from the seed crystal 8 are pulled up in an argon atmosphere. When growing from the seed crystal 8 so that dislocations existing in the seed crystal 8 do not propagate into the silicon single crystal rod 9 during this pulling, the silicon single crystal rod 9 is once narrowed and then thickened. The so-called dash neck 10 is formed,
The silicon single crystal ingot 9 is dislocation free.
【００１１】石英坩堝３の上方には、円筒１１が支持板
１３に軸線を鉛直にした状態で保持されている。支持板
１３はチャンバの内壁に、所定高さ位置で固定されてい
る。引上ワイヤ６は円筒１１内を挿通する。この円筒１
１は、フッ素樹脂製で、内径が６０ｍｍで、高さが２０
０ｍｍである。シリコン単結晶棒９が、シリコン融液の
液面より１ｍ程度引き上げられたとき、円筒１１の下端
がシリコン単結晶棒９の肩部１２に当接しダッシュズネ
ック部１０を囲むことになる。また、円筒１１の下端
は、図２に示すように、テーパ形状に加工されている。
円筒１１の下端とシリコン単結晶棒９の肩部１２との接
触の際に隙間ができ難いようにしてある。なお、この円
筒１１の下端にＯリングを設け、上記接触の際の隙間を
防止してもよい。Above the quartz crucible 3, a cylinder 11 is held by a support plate 13 with its axis being vertical. The support plate 13 is fixed to the inner wall of the chamber at a predetermined height position. The pull-up wire 6 is inserted through the cylinder 11. This cylinder 1
1 is made of fluororesin, has an inner diameter of 60 mm and a height of 20
It is 0 mm. When the silicon single crystal rod 9 is pulled up from the liquid surface of the silicon melt by about 1 m, the lower end of the cylinder 11 comes into contact with the shoulder portion 12 of the silicon single crystal rod 9 and surrounds the dash's neck portion 10. The lower end of the cylinder 11 is processed into a tapered shape as shown in FIG.
A gap is not easily formed when the lower end of the cylinder 11 and the shoulder portion 12 of the silicon single crystal ingot 9 are brought into contact with each other. An O-ring may be provided at the lower end of the cylinder 11 to prevent a gap during the above contact.
【００１２】この当接後、円筒１１は、支持板１３より
離れ、シリコン単結晶棒９の引き上げと共に上昇する。
注入機構１４は、液状硬化物、例えばポリ４フッ化エチ
レン（ＰＴＦＥ）の液１５を円筒１１の内側に注入する
ものである。注入機構１４は、支持板１３より高い位置
で、チャンバ内の所定高さ位置に設けられている。な
お、液状硬化物としてはＰＴＦＥの液１５の他に、ポリ
フッ化エチレンプロピレン（ＦＥＰ）、ＰＦＡ、ポリク
ロロトリフルオロエチレン（ＰＣＴＦＥ）、ＦＲ−ＥＰ
Ｔ、ポリエチレン（ＰＥ）、ポリオレフィン、フッ素ゴ
ム（ＦＫＭ）、または、シリコンゴム（Ｑ）、ポリイミ
ド、ポリピロール等の熱硬化性樹脂などがある。特に、
ＦＥＰ，ＦＲ−ＥＰＴ，ＦＫＭが望ましい。注入された
ＰＴＦＥの液１５は、ダッシュズネック部１０の周りに
付着しながらダッシュズネック部１０を覆う。シリコン
単結晶棒９の引き上げによる肩部１２の温度の低下とと
もに、ＰＴＦＥの液１５は徐々に硬化する。このＰＴＦ
Ｅ液１５の硬化により、シリコン単結晶棒９のダッシュ
ズネック部１０は補強される。したがって、シリコン単
結晶棒９のダッシュズネック部１０は、材料力学的に強
化されるものである。After this contact, the cylinder 11 separates from the support plate 13 and rises as the silicon single crystal ingot 9 is pulled up.
The injection mechanism 14 injects a liquid cured product, for example, a liquid 15 of polytetrafluoroethylene (PTFE) into the inside of the cylinder 11. The injection mechanism 14 is provided at a position higher than the support plate 13 and at a predetermined height in the chamber. As the liquid cured product, in addition to the PTFE liquid 15, polyfluorinated ethylene propylene (FEP), PFA, polychlorotrifluoroethylene (PCTFE), FR-EP
Thermosetting resins such as T, polyethylene (PE), polyolefin, fluororubber (FKM), silicone rubber (Q), polyimide, polypyrrole, and the like are available. In particular,
FEP, FR-EPT and FKM are preferred. The injected PTFE liquid 15 covers the dash's neck portion 10 while adhering around the dash's neck portion 10. As the temperature of the shoulder 12 is lowered by pulling up the silicon single crystal ingot 9, the PTFE liquid 15 is gradually hardened. This PTF
The dash neck portion 10 of the silicon single crystal ingot 9 is reinforced by the hardening of the E liquid 15. Therefore, the dash's neck portion 10 of the silicon single crystal ingot 9 is reinforced by material dynamics.
【００１３】次に、シリコン単結晶棒の引上方法を説明
する。引き上げに先立って、黒鉛サセプタ２内にある石
英坩堝３内に高純度多結晶シリコン、および、ボロンを
高濃度にドープしたシリコン結晶の小片を入れる。これ
ら全体を坩堝軸１に取り付ける。チャンバ内を真空装置
で真空にした後、これにアルゴンガスを供給し、チャン
バ内を１０〜２０Ｔｏｒｒのアルゴン雰囲気にする。ヒ
ータ５に通電して石英坩堝３を加熱し原料のシリコン等
を溶融する。そして、シードチャック７にシリコン単結
晶の種子結晶８を取り付け、この種子結晶８をシリコン
融液４の液面の中心に接触させる。この接触と同時に、
モータで坩堝軸１を所定の坩堝回転速度で一方向に回転
させるともに、引上機構により、所定の結晶回転速度で
種子結晶８を、坩堝回転速度とは逆方向に回転させなが
らゆっくり上昇させる。Next, a method for pulling up a silicon single crystal ingot will be described. Prior to the pulling, high-purity polycrystalline silicon and a small piece of silicon crystal doped with boron at a high concentration are put in a quartz crucible 3 in the graphite susceptor 2. The whole of these is attached to the crucible shaft 1. After the inside of the chamber is evacuated by a vacuum device, argon gas is supplied to the inside of the chamber so that the inside of the chamber becomes an argon atmosphere of 10 to 20 Torr. The heater 5 is energized to heat the quartz crucible 3 to melt the raw material silicon or the like. Then, a silicon single crystal seed crystal 8 is attached to the seed chuck 7, and the seed crystal 8 is brought into contact with the center of the liquid surface of the silicon melt 4. At the same time as this contact
The motor rotates the crucible shaft 1 in one direction at a predetermined crucible rotation speed, and the pulling mechanism slowly raises the seed crystal 8 at a predetermined crystal rotation speed while rotating it in the opposite direction to the crucible rotation speed.
【００１４】この引き上げの開始後は所定速度で引き上
げ、種子結晶８の下端に連続してダッシュズネック部１
０を形成する。このダッシュズネック部１０の大径部の
直径は１０ｍｍ、その小径部の直径は３ｍｍ、その長さ
は２００ｍｍとする。この後、引上速度を遅くし、シリ
コン単結晶棒９の直径を増大して肩部１２を形成する。
この後、引上速度等を変化させて、シリコン単結晶棒９
の直胴部１６（例えば口径２００ｍｍ）を形成する。そ
して、このシリコン単結晶棒９の直胴部１６がシリコン
融液４の液面より１ｍ程度の長さに引き上げ成長したと
き、支持板１３に載置している円筒１１の下端がシリコ
ン単結晶棒９の肩部１２に接触する。このときのシリコ
ン単結晶棒９の肩部１２の温度は、２００℃程度まで下
がっている。この結果、ダッシュズネック部１０を取り
囲むように、円筒１１はシリコン単結晶棒９の上に載置
される。さらに、シリコン単結晶棒９が引き上げられる
と、その上昇にともない、シリコン単結晶棒９の肩部１
２に載置し続けた状態で、円筒１１は支持板１３から離
れる。After starting the pulling, the pulling is performed at a predetermined speed, and the dash's neck portion 1 is continuously connected to the lower end of the seed crystal 8.
Form 0. The diameter of the large diameter portion of the dash's neck portion 10 is 10 mm, the diameter of the small diameter portion thereof is 3 mm, and the length thereof is 200 mm. Thereafter, the pulling speed is slowed down and the diameter of the silicon single crystal ingot 9 is increased to form the shoulder portion 12.
After that, the pulling speed is changed to change the silicon single crystal rod 9
The straight body portion 16 (for example, a diameter of 200 mm) is formed. When the straight body portion 16 of the silicon single crystal ingot 9 is pulled up and grown to a length of about 1 m from the liquid surface of the silicon melt 4, the lower end of the cylinder 11 placed on the support plate 13 is the silicon single crystal. It contacts the shoulder 12 of the rod 9. At this time, the temperature of the shoulder portion 12 of the silicon single crystal ingot 9 has dropped to about 200 ° C. As a result, the cylinder 11 is placed on the silicon single crystal ingot 9 so as to surround the dash neck portion 10. Further, when the silicon single crystal ingot 9 is pulled up, the shoulder portion 1 of the silicon single crystal ingot 9 is accompanied by the rise.
The cylinder 11 is separated from the support plate 13 while being continuously mounted on the support plate 2.
【００１５】次いで、所定高さ位置で、注入機構１４を
用いて、ＰＴＦＥの液１５を、円筒１１からあふれない
程度の所定量ほど、円筒１１の内側と肩部１２に囲まれ
た空間に、注入機構１４のノズルより注入する。このＰ
ＴＦＥの液１５は、円筒１１２内でシリコン単結晶棒９
の肩部１２上に溜り、ダッシュズネック部１０の周りに
付着する。注入されたＰＴＦＥの液１５は、耐熱連続使
用温度が２８８℃なので、気化、燃焼することもなく、
チャンバ内にＰＴＦＥの不純物を放散させることもな
い。なお、この場合、円筒１１の下端と肩部１２との接
触面に隙間ができたとしても、ＰＴＦＥの液１５は粘性
率が高いので、円筒１１の外側に洩れることはない。こ
の後、シリコン単結晶棒９の引き上げによる肩部１２の
温度の低下に従い、ＰＴＦＥの液１５は徐々に温度を下
げる。ＰＴＦＥの液１５の温度が融点以下に下がると、
ＰＴＦＥの液１５は徐々に硬化する。ついには、ＰＴＦ
Ｅの液１５は固化する。この硬化にともない、ＰＴＦＥ
１５は熱収縮する。この熱収縮により、シリコン単結晶
棒９のダッシュズネック部１０は、材料力学的に補強さ
れる。次に、シリコン単結晶棒９の直胴部１６を長さ２
ｍになるまで引き上げ成長させる。この後、シリコン単
結晶棒９の結晶径を徐々に減少させ、テイル処理を完了
する。完了後、円筒１１をシリコン単結晶棒９より外
す。Next, at a predetermined height position, a pouring mechanism 14 is used to fill a space surrounded by the inside of the cylinder 11 and the shoulder 12 by a predetermined amount such that the PTFE liquid 15 does not overflow from the cylinder 11. It is injected from the nozzle of the injection mechanism 14. This P
The TFE liquid 15 is stored in the cylinder 112 in the silicon single crystal rod 9
Accumulates on the shoulders 12 and adheres around the dash neck 10. Since the injected PTFE liquid 15 has a heat resistant continuous use temperature of 288 ° C., it does not vaporize or burn,
Also, the impurities of PTFE are not diffused into the chamber. In this case, even if a gap is formed on the contact surface between the lower end of the cylinder 11 and the shoulder portion 12, the PTFE liquid 15 has a high viscosity and therefore does not leak to the outside of the cylinder 11. After that, as the temperature of the shoulder 12 is lowered by pulling up the silicon single crystal ingot 9, the temperature of the PTFE liquid 15 is gradually lowered. When the temperature of the PTFE liquid 15 drops below the melting point,
The PTFE liquid 15 gradually hardens. Finally, PTF
The liquid 15 of E solidifies. With this curing, PTFE
15 heat-shrinks. Due to this heat shrinkage, the dash's neck portion 10 of the silicon single crystal ingot 9 is reinforced by material dynamics. Next, the straight body portion 16 of the silicon single crystal ingot 9 is set to the length 2
Pull up and grow until m. After that, the crystal diameter of the silicon single crystal ingot 9 is gradually reduced, and the tail treatment is completed. After the completion, the cylinder 11 is removed from the silicon single crystal ingot 9.
【００１６】以上の結果、シリコン単結晶棒９のダッシ
ュズネック部１０を材料力学的に補強することにより、
シリコン融液４中にシリコン単結晶棒９が自重により落
下することはない。したがって、直径８インチ、長さ２
０００ｍｍ、重さ１５０ｋｇ程度のシリコン単結晶棒９
を安全に引き上げ成長させることができる。As a result of the above, by reinforcing the dash's neck portion 10 of the silicon single crystal ingot 9 mechanically,
The silicon single crystal ingot 9 does not drop into the silicon melt 4 due to its own weight. Therefore, 8 inches in diameter and 2 in length
Silicon single crystal rod 9 with a weight of 000 mm and a weight of 150 kg
Can be safely pulled up and grown.
【００１７】[0017]
【発明の効果】以上説明してきたように本発明に係る単
結晶引上装置およびその引上方法によれば、単結晶棒の
ダッシュズネック部を材料力学的に補強することによ
り、結晶融液中に単結晶棒が自重により落下することは
ない。As described above, according to the apparatus for pulling a single crystal and the method for pulling the same according to the present invention, the dash-neck portion of the single crystal rod is mechanically reinforced to form a crystal melt. The single crystal rod does not fall inside due to its own weight.
【図１】本発明の一実施例に係る単結晶引上装置の断面
図である。FIG. 1 is a sectional view of a single crystal pulling apparatus according to an embodiment of the present invention.
【図２】本発明の一実施例に係る単結晶引上装置の要部
の断面図である。FIG. 2 is a sectional view of a main part of a single crystal pulling apparatus according to an embodiment of the present invention.
３ 石英坩堝 ４ シリコン融液（結晶融液） ５ ヒータ ８ シリコン単結晶の種子結晶 ９ シリコン単結晶棒 １０ ダッシュズネック部 １１ 円筒（型） １２ 肩部 １４ 注入機構 １５ ＰＴＦＥの液 １６ 胴体部 3 Quartz Crucible 4 Silicon Melt (Crystal Melt) 5 Heater 8 Silicon Single Crystal Seed Crystal 9 Silicon Single Crystal Rod 10 Dash's Neck Part 11 Cylinder (Model) 12 Shoulder 14 Injection Mechanism 15 PTFE Liquid 16 Body
───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐平 健彰 埼玉県大宮市北袋町一丁目297番地 三菱 マテリアル株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takeaki Sahira 1-297 Kitabukurocho, Omiya City, Saitama Prefecture Central Research Laboratory, Mitsubishi Materials Corporation
Claims (2)
上げつつ、該種子結晶から該種子結晶より直径の大きい
単結晶棒を成長させる引上機構と、を備えた単結晶引上
装置において、 上記種子結晶が上記結晶融液の液面から所定距離引き上
げられたとき、該単結晶棒のダッシュズネック部を取り
囲む筒状の型部材と、 この型部材の一部が上記単結晶棒に接触し、該型部材内
に液状硬化物を注入する注入機構と、を備えることを特
徴とする単結晶引上装置。1. A crucible for holding a crystal melt, and a pulling means for holding a seed crystal, pulling the seed crystal from the crystal melt, and growing a single crystal rod having a diameter larger than the seed crystal from the seed crystal. In an apparatus for pulling a single crystal comprising an upper mechanism, when the seed crystal is pulled up from a liquid surface of the crystal melt by a predetermined distance, a cylindrical mold member surrounding a dash neck portion of the single crystal rod. A single crystal pulling apparatus comprising: an injection mechanism for injecting a liquid cured product into the mold member, a part of the mold member being in contact with the single crystal rod.
直胴部を連続的に形成する単結晶引上方法において、 上記単結晶棒の直胴部の長さが所定距離に達したとき、 上記単結晶棒の肩部に筒状の型部材の下部をダッシュズ
ネック部を取り囲むように接触させる工程と、 液状硬化物を上記型部材内に注ぎ、上記単結晶棒のダッ
シュズネック部を該液状硬化物で覆う工程と、を有する
ことを特徴とする単結晶引上方法。2. A dash's neck portion, a shoulder portion of a single crystal rod,
In the single crystal pulling method of continuously forming the straight body part, when the length of the straight body part of the single crystal rod reaches a predetermined distance, the lower part of the cylindrical mold member is attached to the shoulder part of the single crystal rod. And a step of contacting the dash's neck so as to surround the dash's neck, and pouring a liquid cured product into the mold member to cover the dash's neck of the single crystal rod with the liquid cured product. Method for pulling single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9341292A JP2946935B2 (en) | 1992-03-19 | 1992-03-19 | Single crystal pulling apparatus and pulling method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9341292A JP2946935B2 (en) | 1992-03-19 | 1992-03-19 | Single crystal pulling apparatus and pulling method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05270968A true JPH05270968A (en) | 1993-10-19 |
| JP2946935B2 JP2946935B2 (en) | 1999-09-13 |
Family
ID=14081590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9341292A Expired - Fee Related JP2946935B2 (en) | 1992-03-19 | 1992-03-19 | Single crystal pulling apparatus and pulling method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2946935B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0899363A1 (en) * | 1997-08-28 | 1999-03-03 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Process and apparatus for reducing the load on a seed crystal |
| EP0942276A2 (en) * | 1998-03-13 | 1999-09-15 | Shin-Etsu Handotai Company Limited | Apparatus and method for measuring mechanical strength of neck portion of seed crystal and method for producing silicon single crystal |
| US6022411A (en) * | 1997-03-28 | 2000-02-08 | Super Silicon Crystal Research Institute Corp. | Single crystal pulling apparatus |
| US6033472A (en) * | 1997-03-28 | 2000-03-07 | Super Silicon Crystal Research Institute Corp. | Semiconductor single crystal manufacturing apparatus |
| US6077348A (en) * | 1997-03-31 | 2000-06-20 | Super Silicon Crystal Research Institute Corp. | Single crystal pulling apparatus, single crystal support mechanism, and single crystal pulling method |
| US6117234A (en) * | 1997-03-27 | 2000-09-12 | Super Silicon Crystal Research Institute Corp. | Single crystal growing apparatus and single crystal growing method |
| US6130500A (en) * | 1997-12-03 | 2000-10-10 | Lg Electronics Inc. | Doming effect resistant shadow mask for cathode ray tube and its fabricating method |
| CN104178805A (en) * | 2014-09-05 | 2014-12-03 | 苏州洛特兰新材料科技有限公司 | Improved seed crystal clamp |
| CN104330314A (en) * | 2014-11-24 | 2015-02-04 | 重庆大学 | Clamping mechanism for device for testing high-temperature direct tensile strength of ultrahigh-temperature ceramics |
-
1992
- 1992-03-19 JP JP9341292A patent/JP2946935B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6117234A (en) * | 1997-03-27 | 2000-09-12 | Super Silicon Crystal Research Institute Corp. | Single crystal growing apparatus and single crystal growing method |
| US6033472A (en) * | 1997-03-28 | 2000-03-07 | Super Silicon Crystal Research Institute Corp. | Semiconductor single crystal manufacturing apparatus |
| US6022411A (en) * | 1997-03-28 | 2000-02-08 | Super Silicon Crystal Research Institute Corp. | Single crystal pulling apparatus |
| US6077348A (en) * | 1997-03-31 | 2000-06-20 | Super Silicon Crystal Research Institute Corp. | Single crystal pulling apparatus, single crystal support mechanism, and single crystal pulling method |
| EP0899363A1 (en) * | 1997-08-28 | 1999-03-03 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Process and apparatus for reducing the load on a seed crystal |
| US6059874A (en) * | 1997-08-28 | 2000-05-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Process and device for reducing the load on a seed crystal |
| KR100294763B1 (en) * | 1997-08-28 | 2001-10-26 | 게르트 켈러 | METHOD AND APPARATUS FOR REDUCING LOAD IN CLOSED TOP |
| US6130500A (en) * | 1997-12-03 | 2000-10-10 | Lg Electronics Inc. | Doming effect resistant shadow mask for cathode ray tube and its fabricating method |
| EP0942276A2 (en) * | 1998-03-13 | 1999-09-15 | Shin-Etsu Handotai Company Limited | Apparatus and method for measuring mechanical strength of neck portion of seed crystal and method for producing silicon single crystal |
| EP0942276A3 (en) * | 1998-03-13 | 2001-10-17 | Shin-Etsu Handotai Company Limited | Apparatus and method for measuring mechanical strength of neck portion of seed crystal and method for producing silicon single crystal |
| KR100592964B1 (en) * | 1998-03-13 | 2006-06-23 | 신에쯔 한도타이 가부시키가이샤 | Apparatus and method for measuring mechanical strength of neck portion of seed crystal |
| CN104178805A (en) * | 2014-09-05 | 2014-12-03 | 苏州洛特兰新材料科技有限公司 | Improved seed crystal clamp |
| CN104330314A (en) * | 2014-11-24 | 2015-02-04 | 重庆大学 | Clamping mechanism for device for testing high-temperature direct tensile strength of ultrahigh-temperature ceramics |
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|---|---|
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