JPH05267698A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
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- JPH05267698A JPH05267698A JP4093445A JP9344592A JPH05267698A JP H05267698 A JPH05267698 A JP H05267698A JP 4093445 A JP4093445 A JP 4093445A JP 9344592 A JP9344592 A JP 9344592A JP H05267698 A JPH05267698 A JP H05267698A
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- Prior art keywords
- amorphous semiconductor
- type amorphous
- semiconductor film
- photovoltaic device
- film
- Prior art date
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、光起電力装置に関す
る。FIELD OF THE INVENTION This invention relates to photovoltaic devices.
【０００２】[0002]
【従来の技術】一般に、光起電力装置としては、例えば
ガラス等の絶縁性基板と、該基板上に順に積層された透
明電極と、ｐ−ｉ−ｎの順に積層した非晶質半導体と、
裏面電極とを有するものが知られている。2. Description of the Related Art Generally, as a photovoltaic device, an insulating substrate such as glass, a transparent electrode sequentially laminated on the substrate, an amorphous semiconductor laminated in the order p-i-n,
Those having a back electrode are known.
【０００３】裏面電極としては光反射率の高い銀等が主
流を占めており、ｐ−ｉ−ｎの順に積層した非晶質半導
体としては、アモルファスシリコン、アモルファスシリ
コンカーバイド、アモルファスシリコンゲルマニウム等
が用いられる。また、透明電極としては、酸化錫（Ｓｎ
Ｏ2 ）、酸化インジウム（Ｉｎ2 Ｏ3 ）、酸化インジウ
ム錫（ＩＴＯ）、酸化亜鉛（ＺｎＯ）等が用いられる。As the back surface electrode, silver having a high light reflectance occupies the mainstream, and as an amorphous semiconductor laminated in the order of pin, amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, etc. are used. Be done. Further, as the transparent electrode, tin oxide (Sn
O 2 ), indium oxide (In 2 O 3 ), indium tin oxide (ITO), zinc oxide (ZnO) and the like are used.
【０００４】この従来の光起電力装置においては、変換
効率を高めるため、光入射側の透明電極膜の表面に凹凸
を形成し、非晶質半導体層の表面と裏面の一方又は双方
を微細な凹凸を有する凹凸面、いわゆるテクスチャー構
造に形成して裏面電極の表面で光を散乱させ、非晶質半
導体を透過する裏面電極の反射光の光路長を長くするよ
うにして、いわゆる光閉じ込め効果を利用している。In this conventional photovoltaic device, in order to improve conversion efficiency, unevenness is formed on the surface of the transparent electrode film on the light incident side, and one or both of the front surface and the back surface of the amorphous semiconductor layer are finely divided. A so-called light trapping effect is obtained by forming an uneven surface having unevenness, that is, a so-called texture structure to scatter light on the surface of the back electrode and lengthen the optical path length of the reflected light of the back electrode that transmits the amorphous semiconductor. We are using.
【０００５】[0005]
【発明が解決しようとする課題】前記光閉じ込め構造に
おいては、凹凸形状により、光活性層内での実行的な光
の走行距離を増加せしめ、光起電力装置の短絡電流は増
加できる。しかしその反面、開放電圧が著しく低下する
問題があった。In the above light confinement structure, the uneven shape can increase the effective travel distance of light in the photoactive layer, and can increase the short-circuit current of the photovoltaic device. However, on the other hand, there is a problem that the open circuit voltage is significantly reduced.
【０００６】この原因は、光入射側の透明電極膜の表面
に形成された凹凸の程度が、一導電型非晶質半導体の膜
厚と比較して非常に大きいものであることから、この一
導電型非晶質半導体膜が良好に形成出来ないからであ
る。The cause of this is that the degree of unevenness formed on the surface of the transparent electrode film on the light incident side is extremely large compared with the film thickness of one conductivity type amorphous semiconductor. This is because the conductive amorphous semiconductor film cannot be formed well.
【０００７】この発明は、光閉じ込め効果を十分に保つ
ことができ、開放電圧及び短絡電流とも大きな値を持つ
高性能な光起電力装置を提供することを目的とするもの
である。It is an object of the present invention to provide a high-performance photovoltaic device which can maintain a sufficient light confinement effect and has a large open circuit voltage and short circuit current.
【０００８】[0008]
【課題を解決するための手段】この発明の光起電力装置
は、光入射側より、一導電型非晶質半導体膜、ｉ型非晶
質半導体膜、他導電型非晶質半導体膜及び裏面電極を積
層してなる光起電力装置記において、前記ｉ型非晶質半
導体膜内の前記他導電型非晶質半導体側近傍に、その表
面に凹凸状が形成された不純物濃度の高い非晶質シリコ
ンゲルマニウム膜を設けたこと特徴とする。A photovoltaic device according to the present invention comprises a one-conductivity type amorphous semiconductor film, an i-type amorphous semiconductor film, another conductivity type amorphous semiconductor film and a back surface from the light incident side. In a photovoltaic device formed by stacking electrodes, an amorphous material having a high impurity concentration, in which irregularities are formed on the surface of the i-type amorphous semiconductor film in the vicinity of the other conductivity type amorphous semiconductor side. And a high quality silicon germanium film is provided.
【０００９】また、この発明の光起電力装置は、光入射
側より、一導電型非晶質半導体膜、ｉ型非晶質半導体
膜、他導電型非晶質半導体膜及び裏面電極を積層してな
る光起電力装置において、前記他導電型非晶質半導体膜
内の前記裏面電極側近傍に、その表面に凹凸形状が形成
された不純物濃度の高い非晶質シリコンゲルマニウム膜
を設けたことを特徴とする。Further, in the photovoltaic device of the present invention, one conductivity type amorphous semiconductor film, i-type amorphous semiconductor film, another conductivity type amorphous semiconductor film and the back electrode are laminated from the light incident side. In the photovoltaic device formed as described above, an amorphous silicon germanium film having a high impurity concentration and having an uneven shape formed on its surface is provided in the vicinity of the back electrode side in the other conductivity type amorphous semiconductor film. Characterize.
【００１０】更に、前記凹凸形状は、酸素、炭素並びに
窒素等の不純物をバンドギャップの変化として１％以内
に収まる量として添加された非晶質シリコンゲルマニウ
ム膜の表面を水素等のガス雰囲気中でプラズマ放電を行
うことにより形成すると良い。Further, the irregular shape has a surface of an amorphous silicon germanium film in which impurities such as oxygen, carbon, and nitrogen are added in an amount within 1% as a change in band gap in a gas atmosphere such as hydrogen. It may be formed by performing plasma discharge.
【００１１】[0011]
【作用】この発明によれば、ｉ型非晶質半導体膜内の前
記他導電型非晶質半導体側近傍に、その表面に凹凸状が
形成された不純物濃度の高い非晶質シリコンゲルマニウ
ム（以下、ａ−ＳｉＧｅという。）膜を介在させること
により、光入射側の透明電極の表面に形成された凹凸の
程度を一導電型非晶質半導体膜が良好に形成できるよう
に極力小さくしても、光閉じ込め効果を充分保つことが
出来、開放電圧、短絡電流とも大きな値を持つ高性能な
光起電力装置が得られる。According to the present invention, in the i-type amorphous semiconductor film, near the side of the other conductivity type amorphous semiconductor, unevenness is formed on the surface of the amorphous silicon germanium (hereinafter referred to as high impurity concentration). , A-SiGe), even if the degree of unevenness formed on the surface of the transparent electrode on the light incident side is made as small as possible so that the one conductivity type amorphous semiconductor film can be formed well. In addition, a high-performance photovoltaic device can be obtained which can sufficiently maintain the light confinement effect and has large values of open circuit voltage and short circuit current.
【００１２】[0012]
【実施例】この発明の実施例に係る光起電力装置を図面
に基づき具体的に説明すれば、以下の通りである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The photovoltaic device according to the embodiments of the present invention will be described below in detail with reference to the drawings.
【００１３】図１の模式図に示すように、この光起電力
装置は、ガラス等からなる透明基板１と、これの一面に
順に積層された透明電極としてのＴＣＯ膜２、非晶質半
導体層３及び裏面電極４とを備える。As shown in the schematic view of FIG. 1, this photovoltaic device has a transparent substrate 1 made of glass or the like, a TCO film 2 as a transparent electrode laminated in this order on one surface, and an amorphous semiconductor layer. 3 and the back surface electrode 4.
【００１４】ＴＣＯ膜２は例えば酸化錫（ＳｎＯ2 ）、
酸化インジウム（Ｉｎ2 Ｏ3 ）、酸化インジウム錫（Ｉ
ＴＯ）、酸化亜鉛（ＺｎＯ）等で構成すればよいが、こ
こでは酸化錫（ＳｎＯ2 ）を用いている。The TCO film 2 is, for example, tin oxide (SnO 2 ),
Indium oxide (In 2 O 3 ), indium tin oxide (I
TO), zinc oxide (ZnO) or the like may be used, but tin oxide (SnO 2 ) is used here.
【００１５】非晶質半導体層３は、それぞれプラズマＣ
ＶＤ法によって形成されたｐ型アモルファスシリコンカ
ーバイド（ａ−ＳｉＣ）からなるｐ型非晶質半導体層３
１、ｉ型アモルファスシリコンゲルマニウム（ａ−Ｓｉ
Ｇｅ）からなるｉ型非晶質半導体層３２、ｎ型アモルフ
ァスシリコンからなるｎ型非晶質半導体層３３及びこの
ｎ型非晶質半導体層近傍に形成されたこの発明の特徴で
ある不純物が添加されたａ−ＳｉＧｅ層３５とを備え
る。The amorphous semiconductor layers 3 are formed of plasma C, respectively.
P-type amorphous semiconductor layer 3 made of p-type amorphous silicon carbide (a-SiC) formed by VD method
1, i-type amorphous silicon germanium (a-Si
Ge), i-type amorphous semiconductor layer 32, n-type amorphous semiconductor layer 33 made of n-type amorphous silicon, and an impurity which is a feature of the present invention and is formed in the vicinity of the n-type amorphous semiconductor layer. A-SiGe layer 35 that has been formed.
【００１６】裏面電極４はアルミニウム（Ａｌ）を蒸着
法によって形成すればよい。The back electrode 4 may be formed of aluminum (Al) by a vapor deposition method.
【００１７】さて、この発明者等は、ａ−ＳｉＧｅに酸
素、炭素並びに窒素等の不純物をバンドギャップの変化
として１％以内に収まる量として添加し、水素等のガス
雰囲気中でプラズマ放電を行うと、その表面に凹凸が形
成されることを見出した。この発明は、ａ−ＳｉＧｅ表
面に凹凸を形成し、この凹凸面を用いていわゆるテクス
チャー構造を形成し、裏面電極の表面で光を散乱させる
ように構成したものである。The inventors of the present invention add impurities such as oxygen, carbon, and nitrogen to a-SiGe in an amount within 1% as a change in band gap, and perform plasma discharge in a gas atmosphere such as hydrogen. Then, it was found that unevenness was formed on the surface. The present invention is configured such that unevenness is formed on the surface of a-SiGe, a so-called texture structure is formed using this uneven surface, and light is scattered on the surface of the back electrode.
【００１８】表１にアモルファスシリコンゲルマニウム
（ａ−ＳｉＧｅ）の形成条件を示し、表２にｉ型非晶質
半導体層３２とこの発明の特徴である不純物が添加され
たａ−ＳｉＧｅ層３５との不純物量を示す。Table 1 shows conditions for forming amorphous silicon germanium (a-SiGe), and Table 2 shows the i-type amorphous semiconductor layer 32 and the impurity-added a-SiGe layer 35 which is a feature of the present invention. Indicates the amount of impurities.
【００１９】不純物の添加方法としては、脱ガス／リー
ク量の少ないプラズマＣＶＤの反応室にリークポートを
設け、意図的に空気を導入し、脱ガス／リーク量を増や
すことによる。As a method of adding impurities, a leak port is provided in a reaction chamber of plasma CVD with a small amount of degassing / leakage, and air is intentionally introduced to increase the amount of degassing / leakage.
【００２０】[0020]
【表１】 [Table 1]
【００２１】[0021]
【表２】 [Table 2]
【００２２】図４はＳｉＧｅの組成及び膜中不純物の異
なるａ−ＳｉＧｅ膜の表面にＨ2〜１００ＳＣＣＭ、基
板温度〜１８０℃、パワー密度１７０ｍＷ／ｃｍ2の条
件で水素プラズマ処理を２分施し、ＳＴＭで観測した状
態を示す模式図である。図４（ａ）（ｂ）は上記ｉ層３
２に示す不純物濃度のものであり、（ａ）はａ−Ｓｉ
0.87Ｇｅ0.13の組成、（ｂ）はａ−Ｓｉ0.64Ｇｅ0.36の
組成のものである。図４（ｃ）（ｄ）は上記ａ−ＳｉＧ
ｅ層３５に示す不純物濃度のものであり、（ｃ）はａ−
Ｓｉ0.87Ｇｅ0.13の組成、（ｄ）はａ−Ｓｉ0.64Ｇｅ
0.36の組成のものである。この図４から分かるように不
純物の増加により、その部分が容易にエッチングされ表
面の凹凸が大きくなる。更にＧｅ量の多いほど凹凸が大
きくなる。従って、テクスチャ効果をより得ようとする
と、図４（ｄ）で示す組成並びに不純物濃度のものをａ
−ＳｉＧｅ層３５に用い。これに水素プラズマ処理を施
して、凹凸面を形成すれば良い。In FIG. 4, the surface of an a-SiGe film having different composition and impurities of SiGe is subjected to hydrogen plasma treatment for 2 minutes under the conditions of H 2 to 100 SCCM, substrate temperature to 180 ° C. and power density 170 mW / cm 2 . It is a schematic diagram which shows the state observed by STM. 4A and 4B show the i layer 3 described above.
2 has an impurity concentration shown in FIG. 2, and (a) is a-Si.
The composition is 0.87 Ge 0.13 , and (b) is the composition a-Si 0.64 Ge 0.36 . 4C and 4D show the a-SiG.
The impurity concentration shown in the e layer 35 is shown in FIG.
Composition of Si 0.87 Ge 0.13 , (d) is a-Si 0.64 Ge
It has a composition of 0.36 . As can be seen from FIG. 4, due to the increase of impurities, that portion is easily etched and the surface unevenness becomes large. Further, the larger the amount of Ge, the larger the unevenness. Therefore, in order to obtain a better texture effect, the composition and impurity concentration shown in FIG.
-Used for the SiGe layer 35. Hydrogen plasma treatment may be applied to this to form an uneven surface.
【００２３】このａ−ＳｉＧｅ層３５上に、ｎ型非晶質
半導体層３３及び裏面電極４を設けることで、光入射側
の透明電極２の表面に凹凸の程度をｐ型非晶質半導体膜
３１が良好に形成できるように極力小さくしても、光閉
じ込め効果を充分に保つことが出来る。By providing the n-type amorphous semiconductor layer 33 and the back surface electrode 4 on the a-SiGe layer 35, the degree of unevenness on the surface of the transparent electrode 2 on the light incident side is reduced to the p-type amorphous semiconductor film. Even if it is made as small as possible so that 31 can be formed well, the light confinement effect can be sufficiently maintained.
【００２４】次に、この発明の光起電力装置の製造例を
図３を参照して説明すると、基板１上にｐ型非晶質半導
体膜３１が良好に形成できるように凹凸の程度を極力小
さくした透明電極２を形成し、その上にａ−ＳｉＣから
成るｐ型非晶質半導体膜３１を形成する。その後、ａ−
ＳｉＧｅからなるｉ型層３２の形成を所定膜厚行った
後、酸素等の不純物とＧｅの比率を上記の表２のように
増加させた膜３５を形成する。そして、Ｈ2〜１００Ｓ
ＣＣＭ、基板温度〜１８０℃、パワー密度１７０ｍＷ／
ｃｍ2の水素プラズマ処理を２分施して、その表面に凹
凸を形成する。その後、ｎ型非晶質半導体層３３及び裏
面電極４を形成する。Next, a manufacturing example of the photovoltaic device of the present invention will be described with reference to FIG. 3. The degree of unevenness is minimized so that the p-type amorphous semiconductor film 31 can be formed well on the substrate 1. The reduced transparent electrode 2 is formed, and the p-type amorphous semiconductor film 31 made of a-SiC is formed thereon. After that, a-
After the i-type layer 32 made of SiGe is formed to a predetermined thickness, a film 35 in which the ratio of Ge such as oxygen and Ge is increased as shown in Table 2 above is formed. Then, H 2 ~100S
CCM, substrate temperature ~ 180 ° C, power density 170mW /
A hydrogen plasma treatment of cm 2 is applied for 2 minutes to form irregularities on the surface. Then, the n-type amorphous semiconductor layer 33 and the back surface electrode 4 are formed.
【００２５】この発明の他の実施例を図２に示す。この
ではｎ型非晶質半導体層にｎ型ａ−ＳｉＧｅを用い、そ
の裏面電極４側に、酸素等の不純物を多くしたｎ型ａ−
ＳｉＧｅ膜３５を設けてその表面を水素プラズマ処理を
行うことで凹凸面を形成し、その後に裏面電極４を形成
している。この実施例のその他の構成は、上記実施例と
同じである。Another embodiment of the present invention is shown in FIG. In this case, n-type a-SiGe is used for the n-type amorphous semiconductor layer, and n-type a- with a large amount of impurities such as oxygen is provided on the back electrode 4 side.
The SiGe film 35 is provided, and the surface of the SiGe film 35 is subjected to hydrogen plasma treatment to form an uneven surface, and then the back electrode 4 is formed. The other structure of this embodiment is the same as that of the above embodiment.
【００２６】[0026]
【発明の効果】以上説明したように、この発明によれ
ば、光入射側の透明電極の表面に形成された凹凸の程度
を一導電型非晶質半導体膜が良好に形成できるように極
力小さくしても、光閉じ込め効果を充分保つことが出
来、開放電圧、短絡電流とも大きな値を持つ高性能な光
起電力装置が得られる。As described above, according to the present invention, the degree of unevenness formed on the surface of the transparent electrode on the light incident side is made as small as possible so that the one-conductive type amorphous semiconductor film can be formed well. Even so, the light confinement effect can be sufficiently maintained, and a high-performance photovoltaic device having large values of open circuit voltage and short circuit current can be obtained.
【図１】この発明の一実施例の模式図である。FIG. 1 is a schematic view of an embodiment of the present invention.
【図２】この発明の他の実施例の模式図である。FIG. 2 is a schematic view of another embodiment of the present invention.
【図３】この発明の光起電力装置の製造例を示す模式図
である。FIG. 3 is a schematic view showing a manufacturing example of the photovoltaic device of the present invention.
【図４】ＳｉＧｅの組成及び膜中不純物の異なるａ−Ｓ
ｉＧｅ膜の表面に水素プラズマ処理を施し、ＳＴＭで観
測した状態を示す模式図である。FIG. 4 is a-S having different composition of SiGe and different impurities in the film.
It is a schematic diagram which shows the state which performed the hydrogen plasma process on the surface of the iGe film, and observed by STM.
１ 基板 ２ 透明電極 ３ 非晶質半導体層 ４ 裏面電極 ３１ ｐ型非晶質半導体層 ３２ ｉ型非晶質半導体層 ３３ ｎ型非晶質半導体層 ３５ ａ−ＳｉＧｅ層 DESCRIPTION OF SYMBOLS 1 Substrate 2 Transparent electrode 3 Amorphous semiconductor layer 4 Back electrode 31 p-type amorphous semiconductor layer 32 i-type amorphous semiconductor layer 33 n-type amorphous semiconductor layer 35 a-SiGe layer
Claims (3)
膜、ｉ型非晶質半導体膜、他導電型非晶質半導体膜及び
裏面電極を積層してなる光起電力装置において、前記ｉ
型非晶質半導体膜内の前記他導電型非晶質半導体側近傍
に、その表面に凹凸形状が形成された不純物濃度の高い
非晶質シリコンゲルマニウム膜を設けたことを特徴とす
る光起電力装置。1. A photovoltaic device comprising a one-conductivity type amorphous semiconductor film, an i-type amorphous semiconductor film, another conductivity type amorphous semiconductor film and a back electrode laminated in this order from the light incident side. i
Photovoltaic device characterized in that an amorphous silicon germanium film having a high impurity concentration and having irregularities formed on the surface thereof is provided in the vicinity of the other conductivity type amorphous semiconductor side in the type amorphous semiconductor film. apparatus.
膜、ｉ型非晶質半導体膜、他導電型非晶質半導体膜及び
裏面電極を積層してなる光起電力装置において、前記他
導電型非晶質半導体膜内の前記裏面電極側近傍に、その
表面に凹凸形状が形成された不純物濃度の高い非晶質シ
リコンゲルマニウム膜を設けたことを特徴とする光起電
力装置。2. A photovoltaic device comprising a one-conductivity type amorphous semiconductor film, an i-type amorphous semiconductor film, another conductivity type amorphous semiconductor film and a back electrode stacked in this order from the light incident side. A photovoltaic device, characterized in that an amorphous silicon germanium film having a high impurity concentration and having irregularities formed on its surface is provided in the vicinity of the back electrode side in the other conductivity type amorphous semiconductor film.
等の不純物をバンドギャップの変化として１％以内に収
まる量として添加された非晶質シリコンゲルマニウム膜
の表面を水素等のガス雰囲気中でプラズマ放電を行うこ
とにより形成されていることを特徴とする請求項１又は
２に記載の光起電力装置。3. The concavo-convex shape is such that impurities such as oxygen, carbon and nitrogen are added in an amount of 1% or less as a change in band gap to the surface of an amorphous silicon germanium film in a gas atmosphere such as hydrogen. The photovoltaic device according to claim 1 or 2, wherein the photovoltaic device is formed by performing plasma discharge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09344592A JP3358164B2 (en) | 1992-03-19 | 1992-03-19 | Method for manufacturing photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09344592A JP3358164B2 (en) | 1992-03-19 | 1992-03-19 | Method for manufacturing photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05267698A true JPH05267698A (en) | 1993-10-15 |
| JP3358164B2 JP3358164B2 (en) | 2002-12-16 |
Family
ID=14082528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09344592A Expired - Fee Related JP3358164B2 (en) | 1992-03-19 | 1992-03-19 | Method for manufacturing photovoltaic device |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332605A (en) * | 2002-05-15 | 2003-11-21 | Sharp Corp | Surface roughening method of semiconductor substrate and solar battery |
-
1992
- 1992-03-19 JP JP09344592A patent/JP3358164B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332605A (en) * | 2002-05-15 | 2003-11-21 | Sharp Corp | Surface roughening method of semiconductor substrate and solar battery |
| JP4518731B2 (en) * | 2002-05-15 | 2010-08-04 | シャープ株式会社 | Method for forming irregularities on the surface of a polycrystalline silicon substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3358164B2 (en) | 2002-12-16 |
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