JPH05267380A - Bonding thin wire for semiconductor - Google Patents

Bonding thin wire for semiconductor

Info

Publication number
JPH05267380A
JPH05267380A JP3063430A JP6343091A JPH05267380A JP H05267380 A JPH05267380 A JP H05267380A JP 3063430 A JP3063430 A JP 3063430A JP 6343091 A JP6343091 A JP 6343091A JP H05267380 A JPH05267380 A JP H05267380A
Authority
JP
Japan
Prior art keywords
resin
bonding
layer
thin wire
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3063430A
Other languages
Japanese (ja)
Inventor
Ryoichi Suzuki
良一 鈴木
Hiroyuki Kondo
裕之 近藤
Kohei Tatsumi
宏平 巽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP3063430A priority Critical patent/JPH05267380A/en
Publication of JPH05267380A publication Critical patent/JPH05267380A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/321Disposition
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    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

PURPOSE:To unuse means such as fluid spray, absorption, or the like at bonding operations and obtain thin metal wire which is excellent in insulation, thermostability, junction ability, and abrasion resistance by a method wherein resin having different characteristics is formed in two layers on the surface of the thin metal wire and a film is coated which bears its share in the respective layers. CONSTITUTION:On the surface of a thin metal wire 13, a first layer 14 is formed with resin which is composed of at least one of polyurethane, polyesterimide, and polyimide and which is excellent in abrasion resistance and insulation. Next, a second layer 15 is formed with resin which is composed of at least one of aromatic polyester and polycarbonate and which is excellent in insulation and thermostability, and a consecutive junction ability at a low temperature. Therefore, the resin of each of the layers 14, 15 is readily separated in forming a ball in a first bonding part, and it prevents from being melted upwardly of the ball thereof by the thermostability of the resin of the second layer 15. Further, it can favorably be connected in a second bonding part by thermocompression bonding.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体チップの電極
(パッド)とリードを結ぶボンディング細線に関するも
のであり、特に、絶縁性と耐摩耗性、耐熱性を有する被
覆層を設けたボンディング細線に係わるものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding thin wire connecting an electrode (pad) of a semiconductor chip and a lead, and more particularly to a bonding thin wire provided with a coating layer having insulation, abrasion resistance and heat resistance. It is related.

【0002】[0002]

【従来の技術】半導体チップと、外部出力端子であるリ
ードとは、ボンディング細線で連結されることが多い。
例えば図2に示すように、タブ部1に搭載されたチップ
3の上には回路端子(パッド)4が設けられ、このパッ
ド4と、外部出力端子(インナーリード)5とを、ボン
ディング細線6の各端部で接合して連結されている。ボ
ンディング細線は、図示していないリールから繰り出さ
れ、ローラー9、クランパー8等で案内されボンディン
グ工具(キャピラリー)7の通孔10先端に達する。キ
ャピラリー7の先端部で細線の先端は、アーク加熱また
はガス加熱等の手段によって加熱溶融され、ボール11
を形成する。このボールはキャピラリーでパッド上に熱
間圧着あるいは超音波振動を併用して圧着され、接合部
12(第一ボンド)をつくる。次いでキャピラリーより
導出された細線は、キャピラリー先端でインナーリード
上に接触し、キャピラリーの超音波振動を併用した熱圧
着により接合される(第二ボンド)。
2. Description of the Related Art A semiconductor chip and a lead, which is an external output terminal, are often connected by a bonding thin wire.
For example, as shown in FIG. 2, a circuit terminal (pad) 4 is provided on the chip 3 mounted on the tab portion 1, and the pad 4 and the external output terminal (inner lead) 5 are connected to each other by a bonding thin wire 6. Are joined and joined at their ends. The bonding thin wire is fed from a reel (not shown), guided by a roller 9, a clamper 8 and the like and reaches the tip of the through hole 10 of the bonding tool (capillary) 7. The tip of the thin wire at the tip of the capillary 7 is heated and melted by means such as arc heating or gas heating, and the ball 11
To form. This ball is pressure-bonded on the pad with a capillary by using hot pressure bonding or ultrasonic vibration together to form a bonding portion 12 (first bond). Next, the thin wire led out from the capillary comes into contact with the inner lead at the tip of the capillary and is bonded by thermocompression bonding together with ultrasonic vibration of the capillary (second bond).

【0003】ボンディング細線は、通常Au,Cu,A
l等の金属細線が用いられ、所定のループ高さを形成す
るようパッドとリードとを連結するが、細線はパッドに
熱圧着された部分から引き出されるためしばしばループ
にたわみを生じ、半導体チップと細線のショートが起こ
ることがある。特に、近時集積回路の大規模化に伴っ
て、多ピン構造になるとパッドとリード接合部の距離が
長くなる傾向になり、これに伴いワイヤスパンが長尺化
されると前記たわみが起き易くなると共に細線のカール
現象により、隣接細線が接触し、細線間のショートが起
こることがある。すなわちこのようなことが原因とな
り、電気的な接触不良が発生するという問題点があっ
た。
Bonding thin wires are usually Au, Cu, A
A thin metal wire such as 1 is used to connect the pad and the lead so as to form a predetermined loop height. However, since the thin wire is pulled out from the portion thermocompression bonded to the pad, the thin wire often bends in the loop and is not connected to the semiconductor chip. A thin wire short may occur. In particular, with the recent increase in the scale of integrated circuits, the multi-pin structure tends to increase the distance between the pad and the lead joint portion, and if the wire span is lengthened accordingly, the above-mentioned deflection easily occurs. In addition, due to the curling phenomenon of thin wires, adjacent thin wires may come into contact with each other, causing a short circuit between the thin wires. That is, there is a problem in that electrical contact failure occurs due to such a cause.

【0004】このような問題点を解決するために、細線
表面に絶縁物質を被覆するという提案が特開昭58−2
339号公報や特開昭59−154054号公報に開示
されている。これらの公報に開示されている絶縁物質は
高分子樹脂材料であるが、これらの樹脂によっては、前
記第一ボンドにおいて形成するボール下部に炭化物など
の樹脂成分が残留することがあり、これが原因でパッド
との接合不良を起こすという問題がある。
In order to solve such a problem, a proposal of coating the surface of a thin wire with an insulating material is disclosed in Japanese Patent Laid-Open No. 58-2.
It is disclosed in Japanese Patent No. 339 and Japanese Patent Laid-Open No. 59-154054. The insulating substances disclosed in these publications are polymer resin materials, but depending on these resins, resin components such as carbides may remain in the lower portion of the ball formed in the first bond, which is the cause. There is a problem of causing a defective joint with the pad.

【0005】一方、ボール部分の溶けた樹脂の飛散や、
溶け上がりによる塊の形成によって起こる接合不良を防
ぐため、不活性ガス等の流体を吹き付け、溶融した樹脂
を吹き飛ばすと共にこれを吸引する手段を設けたボンデ
ィング方法及び装置が特開昭63−318132号公報
に開示されている。しかしこのような手段を、多数の細
線を小間隔で、しかも高速、連続的に結線する設備に付
設するには複雑に過ぎるという難点がある。また、現在
すでに一般的に使用されているボンディング装置を改造
するのは困難である。
On the other hand, scattering of melted resin in the ball portion,
In order to prevent a bonding failure caused by the formation of a lump due to melting, a method and apparatus for bonding, in which a fluid such as an inert gas is sprayed to blow away the molten resin and suck the molten resin, is disclosed in Japanese Patent Laid-Open No. 63-318132. Is disclosed in. However, there is a drawback that such means is too complicated to attach to a facility in which a large number of thin wires are connected at small intervals and at high speed and continuously. In addition, it is difficult to modify the bonding apparatus that is already commonly used at present.

【0006】本願発明者らは、上記のような複雑な手段
を用いることなしに、物性を特定した芳香族ポリエステ
ルやポリカーボネート樹脂を被覆した絶縁性に優れたボ
ンディング細線を、特開平2−285648号公報、及
び特開平2−294046号公報で提案している。
The inventors of the present invention have disclosed a bonding thin wire excellent in insulating property, which is coated with an aromatic polyester or a polycarbonate resin whose physical properties are specified, without using the above-mentioned complicated means, and is disclosed in Japanese Patent Application Laid-Open No. 2-285648. It is proposed in the official gazette and JP-A-2-294046.

【0007】[0007]

【発明が解決しようとする課題】絶縁被覆した細線には
次の代表的な物性が要求される。すなわち、 絶縁性(細線と半導体チップ及び細線間のショートの
防止) 耐熱性(ボール上方部への溶け上がり(めくれ上が
り)や樹脂封止時における溶融防止) 接合性(細線の連続ボンディング性、及び接合強度の
保持)がそれであり、これらの特性は、前記した本発明
者らが提案した発明には十分に備えているが、さらにこ
の種の被覆には、 耐摩耗性が要求される。 すなわち、前記細線のボンディング作業において、被覆
細線は搬送時及び停止時にボンディング設備と接触す
る。例えば細線の搬送・停止時におけるクランパーによ
るクランプや、第一ボンディングから第二ボンディング
に移る際のキャピラリー内面での接触、さらに第二ボン
ディング時のキャピラリーの超音波振動や、接合後クラ
ンプで引っ張り切断するときなどによって、被覆面と強
い接触があり、そのため被覆樹脂に傷や剥離が起こる。
このような表面状況では十分な絶縁機能が果たせない。
The following typical physical properties are required for an insulating coated fine wire. Insulation (prevention of short-circuit between thin wire and semiconductor chip and thin wire) Heat resistance (melting up to upper part of ball (turning up) or melting prevention during resin sealing) Bondability (continuous bonding of thin wire, and That is the retention of the bonding strength), and these characteristics are sufficiently provided in the invention proposed by the present inventors, but further, this type of coating requires abrasion resistance. That is, in the bonding work of the thin wire, the covered thin wire comes into contact with the bonding equipment at the time of transportation and at the time of stopping. For example, clamping with a clamper when carrying or stopping a thin wire, contact with the inner surface of the capillary when moving from the first bonding to the second bonding, ultrasonic vibration of the capillary at the time of second bonding, and pulling and cutting with a clamp after bonding At times, there is strong contact with the coated surface, which causes scratches and peeling of the coated resin.
In such a surface condition, a sufficient insulating function cannot be achieved.

【0008】ところで上述した諸特性を備えた絶縁被覆
の要望は強いにも拘らず、今までこれらを十分に満足す
る被覆細線は製造されていない。
[0008] Despite the strong demand for an insulating coating having the above-mentioned various properties, a coated thin wire that fully satisfies these requirements has not been manufactured so far.

【0009】本発明はこの要望に応え、かつボンディン
グ作業時に流体吹き付けや吸引などの特別の手段が不用
であって、絶縁性、耐熱性、接合性は勿論のこと、耐摩
耗性に優れた樹脂を被覆した金属細線を提供することを
目的とするものである。
The present invention responds to this demand and requires no special means such as fluid spraying or suction at the time of bonding work, and the resin has excellent abrasion resistance as well as insulation, heat resistance and bondability. An object of the present invention is to provide a thin metal wire coated with.

【0010】[0010]

【課題を解決するための手段】本発明は、上記した目的
を達成するために、金属細線の表面に、耐摩耗性と耐熱
性の優れた樹脂の第一層を設け、その上部に絶縁性、耐
熱性の優れた樹脂の第二層を被覆したことを特徴とする
半導体用ボンディング細線を要旨とするものであり、ま
た、前記第一の被覆層がポリウレタン、ポリエステルイ
ミド及びポリイミドの少なくとも一種から選ばれた一層
または多層からなり、第二層の被覆がポリアリレート樹
脂等の芳香族ポリエステル樹脂及びポリカーボネート樹
脂の少なくとも一種からなることを特徴とし、そして第
一の被覆層の厚みが0.1〜1.0μm、第二の被覆層
の厚みが0.1〜1.2μmの範囲にあり、また第一の
層と第二の層の合計厚みが0.2〜1.6μmであるこ
とを特徴とする半導体用ボンディング細線をそれぞれ要
旨とする。
In order to achieve the above-mentioned object, the present invention provides a first layer of a resin having excellent wear resistance and heat resistance on the surface of a thin metal wire, and an insulating property on the upper surface thereof. The present invention is based on a semiconductor bonding thin wire characterized by being coated with a second layer of a resin having excellent heat resistance, and the first coating layer is made of at least one of polyurethane, polyesterimide and polyimide. It is characterized in that it is composed of one or more layers selected, and the coating of the second layer is composed of at least one of an aromatic polyester resin such as a polyarylate resin and a polycarbonate resin, and the thickness of the first coating layer is 0.1 to 0.1. 1.0 μm, the thickness of the second coating layer is in the range of 0.1 to 1.2 μm, and the total thickness of the first layer and the second layer is 0.2 to 1.6 μm And semi-conductor And gist use bonding thin lines, respectively.

【0011】以下本発明を詳細に説明する。前述したよ
うに、高分子樹脂を表面に一層被覆した絶縁性細線はす
でに提案されているが、これらの樹脂で本発明の目的と
する特性を十分付与することは困難である。
The present invention will be described in detail below. As described above, insulating fine wires whose surface is further coated with a polymer resin have already been proposed, but it is difficult to sufficiently impart the characteristics intended by the present invention with these resins.

【0012】本発明は、図1に示すように細線13の表
面に特性の異なった樹脂を2層(14,15)に形成
し、それぞれの層で役割を分担させた被覆構成にした点
に最大の特徴を有するものである。すなわち第一層14
を形成する樹脂としてはポリウレタン、ポリエステルイ
ミド、及びポリイミドの少なくとも一種からなり、優れ
た耐摩耗性と絶縁性を有する。また、第二層15を形成
する樹脂としてはポリアリレート等の芳香族ポリエステ
ル及びポリカーボネートの少なくとも一種からなり、絶
縁性と耐熱性に優れ、且つ低温での連続接合性にも優れ
た性質を有する。これら各層の樹脂は第一ボンディング
部でのボール形成において容易に剥離し、且つ第二層の
樹脂の耐熱性によって樹脂のボール上方へ溶け上がり
(めくれ上がり)を防止し、また第二ボンディング部で
の熱圧着での接合がきわめて良好に行える。
In the present invention, as shown in FIG. 1, two layers (14, 15) of resins having different characteristics are formed on the surface of the thin wire 13, and the respective layers share the roles. It has the greatest characteristics. That is, the first layer 14
The resin forming the resin is made of at least one of polyurethane, polyester imide, and polyimide, and has excellent wear resistance and insulating properties. The resin forming the second layer 15 is made of at least one kind of aromatic polyester such as polyarylate and polycarbonate, and has excellent insulating properties and heat resistance, and also has excellent properties of continuous bonding at low temperature. The resin of each of these layers is easily peeled off during ball formation at the first bonding portion, and the heat resistance of the resin of the second layer prevents the resin from melting up (balling up) above the ball, and at the second bonding portion. Can be bonded very well by thermocompression bonding.

【0013】本発明において、第一層の厚さは、絶縁性
の点からは厚いほど優れているが、あまり厚くすると接
合性が低下するので上限を1.0μmとした。また、薄
い程接合性は向上するが、あまり薄くすると絶縁性(帯
電性)が悪くなるので下限を0.1μmとした。また、
第二層は細線先端にボールを形成する際に、アークの発
生に伴う熱によって、被覆樹脂が溶け上がることを防止
すると共に接合性を維持するために0.1〜1.2μm
の範囲とする。その好ましい範囲は0.2〜1.0μm
であり、最も好ましくは0.2〜0.6μmである。第
一層及び第二層の合計厚みは0.2〜1.6μmである
ことが好ましく、より好ましくは0.3〜1.5μmで
ある。第一の被覆層の完全度を増すために、耐摩耗性樹
脂を複数回塗布することにより多層構造とすることも好
ましい。
In the present invention, the thickness of the first layer is better as it is thicker from the standpoint of insulation, but if it is too thick, the bondability will decrease, so the upper limit was made 1.0 μm. Further, the thinner the thickness, the better the bondability, but if the thickness is too thin, the insulating property (chargeability) deteriorates, so the lower limit was made 0.1 μm. Also,
The second layer has a thickness of 0.1 to 1.2 μm in order to prevent the coating resin from being melted by the heat generated by the arc when the ball is formed at the tip of the thin wire and to maintain the bondability.
The range is. The preferable range is 0.2 to 1.0 μm
And most preferably 0.2 to 0.6 μm. The total thickness of the first layer and the second layer is preferably 0.2 to 1.6 μm, more preferably 0.3 to 1.5 μm. In order to increase the completeness of the first coating layer, it is also preferable to apply the abrasion resistant resin a plurality of times to form a multilayer structure.

【0014】尚、本発明における第二層を形成する樹脂
は、メルトインデックス(ASTM−D1238準拠:
温度280℃、荷重2.160kg)として1.0〜10
0g/10min.の範囲にあることが好ましい。すなわ
ち、1.0/10min.未満では粘度が高すぎ、被覆層が
均一な厚みとなりにくく、100g/10min.を越える
と粘度が低すぎ絶縁性が劣るからである。
The resin forming the second layer in the present invention is a melt index (according to ASTM-D1238:
1.0 to 10 as a temperature of 280 ° C and a load of 2.160 kg)
It is preferably in the range of 0 g / 10 min. That is, if it is less than 1.0 / 10 min., The viscosity is too high, and it is difficult to form a uniform thickness of the coating layer, and if it exceeds 100 g / 10 min., The viscosity is too low and the insulating property is poor.

【0015】本発明における被覆層の形成方法は、押し
出し被覆法、静電粉体コーティング法、スプレーコーテ
ィング法、電着コーティング法及び浸漬塗り工法等が考
えられるが、2層被覆を均一に行うためには浸漬塗り工
法を採用することが好ましい。尚、本発明に用いる樹脂
には老化防止剤、難燃剤、充填剤、電圧安定剤、潤滑
剤、紫外線吸収剤等の添加助剤を適宜配合しても良い。
The method of forming the coating layer in the present invention may be an extrusion coating method, an electrostatic powder coating method, a spray coating method, an electrodeposition coating method, a dip coating method or the like. However, two-layer coating is performed uniformly. It is preferable to adopt a dip coating method. Incidentally, the resin used in the present invention may be appropriately blended with an additive aid such as an antiaging agent, a flame retardant, a filler, a voltage stabilizer, a lubricant and an ultraviolet absorber.

【0016】[0016]

【実施例】線径30μmのAu線に、第一層をポリウレ
タン、第二層をポリアリレートの各樹脂で2層被覆し、
厚さの異なる8種類のボンディング細線を作成した。別
の例として同細線に第一層をポリウレタン、第二層をポ
リカーボネートの2層被覆し、厚さの異なる4種類のボ
ンディング細線を作成した。なお、試料Oについては第
一層を0.2μm厚みで3回被覆して0.6μm厚みと
した。被覆方法はいずれも浸漬塗り工法によった。各試
料の被覆厚さ(層厚)を表1及び表2に示した。層厚が
本発明の範囲から外れる比較例をI,J,K,及びPに
示した。また、各試料について連続ボンディング性(接
合性)、絶縁性、耐熱性及び耐摩耗性の試験を行った結
果を表3に示した。
EXAMPLE An Au wire having a wire diameter of 30 μm was coated with two layers of polyurethane resin for the first layer and polyarylate resin for the second layer,
Eight types of bonding thin wires having different thicknesses were prepared. As another example, the same thin wire was covered with two layers of a first layer of polyurethane and a second layer of polycarbonate to prepare four types of bonding thin wires having different thicknesses. In the case of sample O, the first layer was coated with a thickness of 0.2 μm three times to have a thickness of 0.6 μm. The coating methods were all dip coating methods. The coating thickness (layer thickness) of each sample is shown in Tables 1 and 2. Comparative examples I, J, K, and P in which the layer thickness is out of the range of the present invention are shown. Table 3 shows the results of tests of continuous bondability (bondability), insulation, heat resistance, and wear resistance of each sample.

【0017】[0017]

【表1】 [Table 1]

【0018】[0018]

【表2】 [Table 2]

【0019】[0019]

【表3】 [Table 3]

【0020】連続ボンディング性は、被覆細線とリード
フレームとの連続接合を20000回行い、そのうちボ
ンディングできなかったもの及びプルテスト(細線にフ
ックをかけ上方に0.5mm/分で引き上げて細線が破断
するか、細線がパッドもしくはリードから剥がれるとき
の最大荷重を測定)で4g以下のものの割合(%)を不
良率とし、○印は不良率0.01%未満、△印は不良率
0.01〜0.1%未満、×印は0.1%以上である。
絶縁性は被膜耐電圧を測定し○印は30V以上の場合、
×印は30V未満の値をあらわす。耐熱性は接合時細線
先端に形成したボールの上部200μm以上にわたって
被膜が剥がれた場合を×印とし、200μm未満であれ
ば○印とした。耐摩耗性は細線長さ方向2mmスパンに1
ケ以上の剥れがあれば×印とし、それ以外は○印とし
た。
For continuous bonding, continuous coating of the coated thin wire and the lead frame is carried out 20,000 times, of which unbonded one and pull test (a hook is applied to the thin wire and the wire is pulled upward at 0.5 mm / min to break the thin wire). Alternatively, the percentage (%) of those having a fine wire of 4 g or less when measuring the maximum load when peeled off from the pad or the lead is defined as a defective rate, and ○ indicates a defective rate of less than 0.01% and Δ indicates a defective rate of 0.01 to Less than 0.1%, x mark is 0.1% or more.
For insulation, measure the withstand voltage of the coating, and if the ○ mark is 30 V or more,
The x mark represents a value of less than 30V. The heat resistance was marked with X when the coating was peeled off over 200 μm or more of the ball formed at the tip of the thin wire at the time of bonding, and was marked with O when it was less than 200 μm. Abrasion resistance is 1 in 2mm span in the length direction of fine wire
If there was more peeling than the mark, it was marked with X, and other than that, it was marked with O.

【0021】表3に示した結果から明らかなように本発
明の試料はいずれも合格であり(○ないし△)それぞれ
良好な特性を示している。比較例のI,Jは一層被覆で
あり耐熱性、耐摩耗性が悪く、被膜厚さの薄い試料Pは
実用上使用が困難であることがわかった。尚、2層の合
計厚さが厚い試料Kはボンディング性が劣っていた。
As is clear from the results shown in Table 3, all the samples of the present invention were acceptable (∘ to Δ) and each showed good characteristics. It was found that the samples I and J of the comparative examples are more coated and have poor heat resistance and wear resistance, and the sample P having a small film thickness is practically difficult to use. The sample K having a large total thickness of the two layers was inferior in bondability.

【0022】[0022]

【発明の効果】以上説明したように、本発明の2層被覆
したボンディング細線は絶縁性、接合性、耐摩耗性に優
れると共に耐熱性に優れており、従ってボンディング不
良もなく、かつ剥離傷や細線どうし及び半導体チップと
のショートを防ぐことができ、さらにリード間隔を縮小
して集積回路の大規模化を図ることができる。また、製
品歩留も高く、工業的な価値がきわめて大きい。
As described above, the double-layered bonding fine wire of the present invention is excellent in insulating property, bonding property, wear resistance and heat resistance, and therefore has no bonding failure and peeling scratches. It is possible to prevent short circuits between the thin wires and to the semiconductor chip, and further reduce the lead interval to increase the scale of the integrated circuit. In addition, the product yield is high and the industrial value is extremely high.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a),(b)は本発明の横,縦の断面を示す
図。
1A and 1B are views showing horizontal and vertical cross sections of the present invention.

【図2】ボンディング工程の一例であって、(a)はボ
ールの形成、(b)は接合状況を説明する図。
2A and 2B are views illustrating an example of a bonding process, in which FIG. 2A is a diagram for forming a ball and FIG.

【符号の説明】[Explanation of symbols]

1 :タブ 2 :接着剤 3 :半導体チップ 4 :パッド 5 :インナーリード 6,13:細線 6′ :絶縁被覆 7 :キャピラリー 8 :クランパー 9 :ガイドロール 10 :案内穴 11 :ボール 12 :ボンディング部(第一) 14 :第一層被覆 15 :第二層被覆 1: Tab 2: Adhesive 3: Semiconductor chip 4: Pad 5: Inner lead 6, 13: Fine wire 6 ': Insulating coating 7: Capillary 8: Clamper 9: Guide roll 10: Guide hole 11: Ball 12: Bonding part ( 1st) 14: First layer coating 15: Second layer coating

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 金属細線の表面に、耐摩耗性と絶縁性を
有する樹脂の第一の被覆層を、その外側に耐熱性、絶縁
性を有する樹脂の第二の被覆層を設けたことを特徴とす
る半導体用ボンディング細線。
1. A first coating layer of a resin having abrasion resistance and insulation is provided on the surface of a thin metal wire, and a second coating layer of a resin having heat resistance and insulation is provided outside thereof. The characteristic bonding wire for semiconductors.
【請求項2】 第一の被覆層が、ポリウレタン、ポリエ
ステルイミド、及びポリイミドの少なくとも一種からな
り、第二の被覆層が芳香族ポリエステル樹脂、芳香族ポ
リカーボネート樹脂の少なくとも一種からなる請求項1
記載の半導体用ボンディング細線。
2. The first coating layer is made of at least one of polyurethane, polyesterimide and polyimide, and the second coating layer is made of at least one of aromatic polyester resin and aromatic polycarbonate resin.
Bonding thin wire for semiconductor described.
【請求項3】 第一の被覆層が、ポリウレタン、ポリエ
ステルイミド及びポリイミドの少なくとも一種からなる
層を多層積層してなる請求項1記載の半導体用ボンディ
ング細線。
3. The thin bonding wire for a semiconductor according to claim 1, wherein the first coating layer is formed by laminating multiple layers of at least one of polyurethane, polyesterimide and polyimide.
【請求項4】 第一の被覆層の厚みが、0.1〜1.0
μm、第二の被覆層の厚みが0.1〜1.2μmであ
り、第一層と第二層の合計厚みが0.2〜1.6μmで
ある請求項1,2あるいは3のいずれかに記載の半導体
用ボンディング細線。
4. The thickness of the first coating layer is 0.1 to 1.0.
The thickness of the second coating layer is 0.1 to 1.2 μm, and the total thickness of the first layer and the second layer is 0.2 to 1.6 μm. The thin bonding wire for semiconductor according to.
JP3063430A 1991-03-27 1991-03-27 Bonding thin wire for semiconductor Pending JPH05267380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3063430A JPH05267380A (en) 1991-03-27 1991-03-27 Bonding thin wire for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3063430A JPH05267380A (en) 1991-03-27 1991-03-27 Bonding thin wire for semiconductor

Publications (1)

Publication Number Publication Date
JPH05267380A true JPH05267380A (en) 1993-10-15

Family

ID=13229053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3063430A Pending JPH05267380A (en) 1991-03-27 1991-03-27 Bonding thin wire for semiconductor

Country Status (1)

Country Link
JP (1) JPH05267380A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227126A (en) * 2007-03-13 2008-09-25 National Institute Of Advanced Industrial & Technology Fine coaxial wire, its manufacturing method, and semiconductor device
KR20160029035A (en) * 2013-07-03 2016-03-14 로젠버거 호흐프리쿠벤츠테흐닉 게엠베하 운트 코. 카게 A substrate less die package having wires with dielectric and metal coatings and the method of manufacturing the same
JP2016526793A (en) * 2013-07-03 2016-09-05 ローゼンベルガー ホーフフレクベンツテクニーク ゲーエムベーハー ウント ツェーオー カーゲー Mixed impedance bond wire bonding and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227126A (en) * 2007-03-13 2008-09-25 National Institute Of Advanced Industrial & Technology Fine coaxial wire, its manufacturing method, and semiconductor device
KR20160029035A (en) * 2013-07-03 2016-03-14 로젠버거 호흐프리쿠벤츠테흐닉 게엠베하 운트 코. 카게 A substrate less die package having wires with dielectric and metal coatings and the method of manufacturing the same
JP2016526793A (en) * 2013-07-03 2016-09-05 ローゼンベルガー ホーフフレクベンツテクニーク ゲーエムベーハー ウント ツェーオー カーゲー Mixed impedance bond wire bonding and manufacturing method thereof
JP2016531416A (en) * 2013-07-03 2016-10-06 ローゼンベルガー ホーフフレクベンツテクニーク ゲーエムベーハー ウント ツェーオー カーゲー Substrateless die package having wire coated with dielectric and metal and method of manufacturing the same
US20160372402A1 (en) * 2013-07-03 2016-12-22 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Mixed impedance leads for die packages and method of making the same
US10340209B2 (en) 2013-07-03 2019-07-02 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Mixed impedance leads for die packages and method of making the same

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