JPH05267191A - Device for heating semiconductor wafer - Google Patents

Device for heating semiconductor wafer

Info

Publication number
JPH05267191A
JPH05267191A JP6476092A JP6476092A JPH05267191A JP H05267191 A JPH05267191 A JP H05267191A JP 6476092 A JP6476092 A JP 6476092A JP 6476092 A JP6476092 A JP 6476092A JP H05267191 A JPH05267191 A JP H05267191A
Authority
JP
Japan
Prior art keywords
annular member
cylindrical body
flange
electrodes
disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6476092A
Other languages
Japanese (ja)
Other versions
JP3131010B2 (en
Inventor
和宏 ▲のぼり▼
Kazuhiro Nobori
Ryusuke Ushigoe
隆介 牛越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP04064760A priority Critical patent/JP3131010B2/en
Publication of JPH05267191A publication Critical patent/JPH05267191A/en
Application granted granted Critical
Publication of JP3131010B2 publication Critical patent/JP3131010B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To prevent corrosion of electrodes, terminals, thermocouples, etc., and also discharge and leakage between electrodes by providing an annular member of soft metal between a disk-shaped base body and end face of column- like body and pressing the disk-shaped base body and column-like body to the annular member. CONSTITUTION:A disk-shaped ceramic heater consists of a disk-shaped base body 2 and a resistor heating element 3 buried within the base body. An annular member 7 is provided between a flange 6a and the surface of main body 2. The cross section in the width direction of the annular member 7 is circular and made of soft metal. By tightening a bolt 22 which is a pressing member, a holding plate and a supporting member 4 are coupled together so that a load is applied between the main body 2 and the column-like body 6, and the annular member 7 is pressed against the flange 6a and a rear surface 2b, so as to obtain sealing. Since an electrode 9 and a terminal 12 are not exposed to the atmosphere of an inner space 14 within a vessel, corrosion of the electrode 9 and discharge and leakage between electrodes or between the electrode and a vessel 17 in vacuum will not take place.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、プラズマCVD 、減圧CV
D 、プラズマエッチング、光エッチング装置等に使用さ
れる半導体ウエハー加熱装置に関するものである。
FIELD OF THE INVENTION The present invention is applicable to plasma CVD, low pressure CV.
The present invention relates to a semiconductor wafer heating device used in D, plasma etching, photo-etching devices and the like.

【0002】[0002]

【従来の技術】スーパークリーン状態を必要とする半導
体製造用装置では、腐食性ガス、エッチング用ガス、ク
リーニング用ガスとして塩素系ガス、弗素系ガス等の腐
食性ガスが使用されている。このため、ウエハーをこれ
らの腐食性ガスに接触させた状態で加熱するための加熱
装置として、抵抗発熱体の表面をステンレススチール、
インコネル等の金属により被覆した従来のヒーターを使
用すると、これらのガスの曝露によって、塩化物、酸化
物、弗化物等の粒径数μm の、好ましくないパーティク
ルが発生する。また、いわゆる間接加熱方式の半導体ウ
エハー加熱装置が開発されている。ところがこの方式の
ものは、直接加熱式のものに比較して熱損失が大きいこ
と、温度上昇に時間がかかること、赤外線透過窓へのCV
D 膜の付着により赤外線の透過が次第に妨げられ、赤外
線透過窓で熱吸収が生じて窓が過熱すること等の問題が
あった。
2. Description of the Related Art Corrosive gases such as chlorine gas and fluorine gas are used as a corrosive gas, an etching gas, and a cleaning gas in a semiconductor manufacturing apparatus requiring a super clean state. Therefore, as a heating device for heating the wafer in contact with these corrosive gases, the surface of the resistance heating element is made of stainless steel,
When a conventional heater coated with a metal such as Inconel is used, exposure to these gases produces undesired particles such as chlorides, oxides and fluorides having a particle size of several μm. Also, a so-called indirect heating type semiconductor wafer heating device has been developed. However, this type has a larger heat loss than the direct heating type, it takes time to raise the temperature, and CV to the infrared transmission window
The attachment of the D film gradually hinders the transmission of infrared rays, and there is a problem that the infrared transmission window absorbs heat and overheats the window.

【0003】[0003]

【発明が解決しようとする課題】上記の問題を解決する
ため、本発明者等は、円盤状の緻密質セラミックス内に
抵抗発熱体を埋設し、このセラミックスヒーターをグラ
ファイト製ケースで保持した加熱装置について検討し
た。その結果この加熱装置は、上述のような問題点を一
掃した極めて優れた装置であることが判明した。しか
し、こうした加熱装置では、円盤状セラミックスヒータ
ーの背面側に、電力供給用の電極や端子、熱電対などを
取り付ける必要がある。そして、これらの金属製部材が
高温の腐食性ガスに曝されると、腐食を受ける。また、
セラミックスヒーターの背面に、導電性膜が徐々に堆積
してくると、一対の電極の間で、また電極とケースとの
間で、放電や漏電が起こる。本発明の課題は、電力供給
用の電極や端子、熱電対等の腐食や、電極間の放電、漏
電を防止できるようにすることである。
SUMMARY OF THE INVENTION In order to solve the above problems, the present inventors have developed a heating device in which a resistance heating element is embedded in a disc-shaped dense ceramic, and the ceramic heater is held by a graphite case. Was examined. As a result, it was found that this heating device was an extremely excellent device that eliminated the above-mentioned problems. However, in such a heating device, it is necessary to attach electrodes and terminals for power supply, a thermocouple, etc. on the back side of the disk-shaped ceramics heater. When these metal members are exposed to a high temperature corrosive gas, they are corroded. Also,
When the conductive film is gradually deposited on the back surface of the ceramics heater, discharge or electric leakage occurs between the pair of electrodes and between the electrode and the case. An object of the present invention is to make it possible to prevent corrosion of electrodes and terminals for power supply, thermocouples, etc., and prevent discharge and leakage between electrodes.

【0004】[0004]

【課題を解決するための手段】本発明は、緻密質セラミ
ックスからなる盤状基体の内部に抵抗発熱体を埋設して
なるセラミックスヒーターと、緻密質セラミックスから
なり、両端が開口している筒状体と、前記盤状基体と前
記筒状体の端面との間に設置された軟質金属製の環状部
材と、前記セラミックスヒーターの側周面を支持する支
持部材と、前記筒状体を前記盤状基体の方へと押圧する
押圧用部材とを備え、前記盤状基体及び前記筒状体を前
記環状部材に押しつけることにより前記盤状基体と前記
筒状体との間を気密にシールできるように構成された、
半導体ウエハー加熱装置に係るものである。
DISCLOSURE OF THE INVENTION The present invention is directed to a ceramic heater in which a resistance heating element is embedded in a board-shaped substrate made of dense ceramics, and a cylindrical heater made of dense ceramics and having both ends open. A body, an annular member made of a soft metal installed between the plate-shaped base body and the end face of the cylindrical body, a support member for supporting a side peripheral surface of the ceramic heater, and the cylindrical body as the plate. A pressing member for pressing the plate-shaped base body toward the annular member, and by pressing the plate-shaped base body and the cylindrical body against the annular member, an airtight seal can be formed between the plate-shaped base body and the cylindrical body. Configured to,
The present invention relates to a semiconductor wafer heating device.

【0005】上記の半導体ウエハー加熱装置において、
押圧用部材を、実質的に恒温状態にあるばねとし、この
ばねの圧縮荷重又は引張荷重を利用して筒状体を盤状基
体の方へと押しつけると特に好ましい。ここで、「実質
的に恒温状態にある」とは、ばねの周囲温度がほぼ一定
に保たれ、従ってばねのばね定数がほぼ一定に保たれて
いる状態にあることをいう。
In the above semiconductor wafer heating device,
It is particularly preferable that the pressing member is a spring in a substantially constant temperature state, and the compressive load or tensile load of this spring is used to press the tubular body toward the disk-shaped substrate. Here, "substantially in a constant temperature state" means that the ambient temperature of the spring is kept substantially constant, and thus the spring constant of the spring is kept substantially constant.

【0006】[0006]

【実施例】図1は、半導体製造装置に本実施例の加熱装
置を取り付けた状態を示す断面図である。容器17に貫通
孔15, 16が設けられ、容器17の内部空間14に本実施例の
加熱装置が設置されている。容器17の上側壁面に、円形
貫通孔20A と水冷ジャケット18が設けられている。円筒
状体6は、緻密でガスタイトなセラミックスからなり、
円筒形状の本体6cと、本体6cの末端に設けられた円環状
のフランジ6aとから構成されている。本体6cが円形貫通
孔20A に挿通、固定され、本体6cと容器17とがOリング
8で気密にシールされる。
EXAMPLE FIG. 1 is a sectional view showing a state in which the heating apparatus of this example is attached to a semiconductor manufacturing apparatus. Through holes 15 and 16 are provided in the container 17, and the heating device of this embodiment is installed in the internal space 14 of the container 17. A circular through hole 20A and a water cooling jacket 18 are provided on the upper wall surface of the container 17. The cylindrical body 6 is made of dense and gastight ceramics,
It is composed of a cylindrical main body 6c and an annular flange 6a provided at the end of the main body 6c. The main body 6c is inserted and fixed in the circular through hole 20A, and the main body 6c and the container 17 are hermetically sealed by the O-ring 8.

【0007】略円盤状のセラミックスヒーター1は、略
円盤状の基体2と、基体2の内部に埋設された抵抗発熱
体3とからなる。基体2は、緻密でガスタイトなセラミ
ックスからなる。抵抗発熱体3は、例えば渦巻状に埋設
されており、抵抗発熱体3の両末端が、それぞれ端子12
に連結されている。各端子12の表面が、基体2の背面2b
側に露出し、各端子12の露出面に丸棒状の電極9が連結
され、各電極9の末端にリード線10が接続されている。
また、基体2の背面2bに熱電対11の先端が固定される。
電極9及び熱電対11は、円筒状体6の内側空間6b内を上
下方向に延びる。基体2の外周面には円環状のフランジ
2aが形成され、支持部材4の下部内周面にフランジ4aが
形成されており、フランジ4aの上にフランジ2aが載置さ
れる。支持部材4の上に押え板5が設置され、支持部材
4と押え板5とが、ボルト等で締結されている。
The substantially disk-shaped ceramics heater 1 is composed of a substantially disk-shaped base 2 and a resistance heating element 3 embedded in the base 2. The base 2 is made of dense and gastight ceramics. The resistance heating element 3 is, for example, embedded in a spiral shape, and both ends of the resistance heating element 3 are connected to the terminals 12 respectively.
Is linked to. The surface of each terminal 12 is the back surface 2b of the base 2.
A round rod-shaped electrode 9 is connected to the exposed surface of each terminal 12, and a lead wire 10 is connected to the end of each electrode 9.
Further, the tip of the thermocouple 11 is fixed to the back surface 2b of the base 2.
The electrode 9 and the thermocouple 11 vertically extend in the inner space 6b of the cylindrical body 6. An annular flange is provided on the outer peripheral surface of the base body 2.
2a is formed, a flange 4a is formed on the lower inner peripheral surface of the support member 4, and the flange 2a is placed on the flange 4a. A holding plate 5 is installed on the support member 4, and the support member 4 and the holding plate 5 are fastened with bolts or the like.

【0008】押え板5の円形貫通孔5aに本体6cが挿通さ
れ、押え板5の下側面にフランジ6aが当接している。フ
ランジ6aと基体2の表面との間に、円環状部材7が設置
される。この円環状部材7の幅方向断面は円形であり、
軟質金属からなる。押圧用部材であるボルト22を締めつ
けることによって押え板と支持部材4とを締結し、基体
2と円筒状体6との間に負荷を加え、円環状部材7をフ
ランジ6a及び背面2bに対して加圧し、気密にシールす
る。これにより、隙間13A と内側空間6bとの間の通気が
ほぼ遮断される。
The body 6c is inserted into the circular through hole 5a of the holding plate 5, and the flange 6a is in contact with the lower surface of the holding plate 5. An annular member 7 is installed between the flange 6a and the surface of the base 2. A cross section in the width direction of the annular member 7 is circular,
Made of soft metal. The holding plate and the support member 4 are fastened by tightening the bolt 22 which is a pressing member, a load is applied between the base body 2 and the cylindrical body 6, and the annular member 7 is attached to the flange 6a and the back surface 2b. Pressurize and seal hermetically. As a result, the ventilation between the gap 13A and the inner space 6b is almost shut off.

【0009】セラミックスヒーター1は、ホットプレス
焼結、常圧焼結によって製造することができる。円筒状
体6については、射出成形又は押し出し成形、プレス成
形、静水圧プレス成形し、常圧焼結して製造することが
できる。
The ceramic heater 1 can be manufactured by hot press sintering or normal pressure sintering. The cylindrical body 6 can be manufactured by injection molding, extrusion molding, press molding, isostatic press molding, and normal pressure sintering.

【0010】本実施例の加熱装置によれば、従来の金属
ヒーターの場合のような汚染や、間接加熱方式の場合の
ような熱効率の悪化の問題を解決できる。また、電極
9、端子12が容器の内部空間14の雰囲気に曝されないの
で、電極9等の腐食、電極9からの汚染、さらには、真
空中での電極間又は電極と容器17との間の放電、漏電の
おそれがない。
According to the heating device of the present embodiment, the problems of contamination as in the case of the conventional metal heater and the deterioration of the thermal efficiency as in the case of the indirect heating method can be solved. Further, since the electrodes 9 and the terminals 12 are not exposed to the atmosphere of the internal space 14 of the container, the electrodes 9 and the like are corroded, the electrodes 9 are contaminated, and further, between the electrodes in vacuum or between the electrodes and the container 17. There is no risk of discharge or leakage.

【0011】また、本出願人の研究によれば、特に真空
中の場合、熱電対の周囲のガス分子の挙動は、大気圧〜
1torrの状態においては粘性流域にあるが、真空度が高
まると分子流域に移行し、これに伴って熱電対における
熱移動の態様が大幅に変化するため、正確な温度測定が
できなくなることが判っている。また、粘性流域におい
ても、圧力変動が大きい場合は温度測定誤差が存在する
ことが判っている。この点、本実施例では、熱電対11が
容器内雰囲気に曝されないので、上記のような温度測定
誤差の問題は生じない。
Further, according to the research conducted by the applicant of the present invention, the behavior of gas molecules around the thermocouple is found to be from atmospheric pressure to
It is in the viscous flow region in the state of 1 torr, but when the degree of vacuum increases, it moves to the molecular flow region, and the mode of heat transfer in the thermocouple changes significantly with it, and it is clear that accurate temperature measurement cannot be performed. ing. It is also known that there is a temperature measurement error when the pressure fluctuation is large even in the viscous flow region. In this respect, in the present embodiment, since the thermocouple 11 is not exposed to the atmosphere in the container, the above-mentioned problem of temperature measurement error does not occur.

【0012】また、円筒状体6とセラミックスヒーター
1とを、軟質金属からなる円環状部材7でシールできる
ことが重要であり、これによりシールが非常に容易にな
るし、かつ安定になる。本発明者は、セラミックスヒー
ター1と円筒状体6とをガラス接合することも検討した
が、両者の接合強度を大きくし、接合部分のクラックや
破壊を防止するのは、製造上かなり難しいことが解っ
た。これは、ガラス接合部分に熱応力が集中するからで
あった。また、こうしたガラス接合を行うには、一般に
1400℃以上での加熱処理が必要であるが、この際にタン
グステン線の劣化等の悪影響があった。
Further, it is important that the cylindrical body 6 and the ceramic heater 1 can be sealed with the annular member 7 made of a soft metal, which makes the sealing very easy and stable. The present inventor has also studied glass-bonding the ceramic heater 1 and the cylindrical body 6, but it is considerably difficult in manufacturing to increase the bonding strength of both and prevent cracks and breakage of the bonded portion. I understand. This is because the thermal stress concentrates on the glass bonded portion. Moreover, in order to perform such glass bonding, generally,
Although heat treatment at 1400 ° C or higher is required, there was an adverse effect such as deterioration of the tungsten wire at this time.

【0013】なお、ゴム製のOリングを用いることも検
討したが、この使用温度の上限は高々300 ℃であり、低
温用途のみに限定されてしまう。また、インコネルやス
テンレス製のメタルOリング、メタルCリングでは、セ
ラミックス同士を気密にシールすることは難しく、気密
性を上げようとして大きな荷重をかけると、セラミック
スにクラックが生ずる場合があった。
The use of a rubber O-ring has also been examined, but the upper limit of the operating temperature is 300 ° C. at most, and it is limited to low temperature applications. Further, it is difficult to hermetically seal ceramics with Inconel or stainless metal O-rings and metal C-rings, and cracks may occur in ceramics when a large load is applied to increase hermeticity.

【0014】また、円筒状体6と、セラミックスヒータ
ー1とが別体であるので、いずれかにクラック等の故障
が生じた場合には、両者を分離し、故障した方だけを交
換することができる。円筒状体6とセラミックスヒータ
ー1とをガラス接合すると、接合部分にクラックが入り
易いうえに、一度クラックが入ると一括して取り換える
しかない。しかも、軟質金属製の円環状部材7には応力
緩和作用があるので、各部材の熱応力を吸収できる。ま
た、ボルト22の締結力を調整することで、円環状部材7
に加わる圧力を変更でき、従って円環状部材7によるシ
ール性能を適宜変化させることができる。
Further, since the cylindrical body 6 and the ceramic heater 1 are separate bodies, if a failure such as a crack occurs in either of them, it is possible to separate the two and replace only the failed one. it can. When the cylindrical body 6 and the ceramics heater 1 are glass-bonded to each other, cracks are likely to occur in the bonded portion, and once cracked, they must be replaced all at once. Moreover, since the annular member 7 made of soft metal has a stress relaxing action, the thermal stress of each member can be absorbed. Further, by adjusting the fastening force of the bolt 22, the annular member 7
It is possible to change the pressure applied to, and thus the sealing performance of the annular member 7 can be changed appropriately.

【0015】円環状部材7を構成する軟質金属として
は、耐蝕性と融点が高い白金が最も好ましい。他に、ニ
ッケル、銀、金が耐蝕性の点で好ましい。銅は、半導体
に悪影響を及ぼしうる。
As the soft metal forming the annular member 7, platinum having the high corrosion resistance and high melting point is most preferable. In addition, nickel, silver and gold are preferable in terms of corrosion resistance. Copper can adversely affect semiconductors.

【0016】基体2、円筒状体6の材質としては、シリ
コンナイトライド、サイアロン、窒化アルミニウム等が
好ましく、シリコンナイトライドやサイアロンが耐熱衝
撃性の点で更に好ましい。また、ハロゲン系腐食性ガス
に対する耐蝕性の点では、窒化アルミニウムが最も好ま
しい。抵抗発熱体3の材質としては、タングステン、モ
リブデン、白金等が好ましい。容器17と円筒状体6との
間のシールは、図1に示すOリングの他、拡散接合、摩
擦圧接、表面にスパッタリングで金属薄膜を設けたうえ
での摩擦圧接、ガラス接合、メタルバッキング等による
ことができる。
As materials for the substrate 2 and the cylindrical body 6, silicon nitride, sialon, aluminum nitride and the like are preferable, and silicon nitride and sialon are more preferable in terms of thermal shock resistance. Aluminum nitride is most preferable from the viewpoint of corrosion resistance against halogen-based corrosive gas. The material of the resistance heating element 3 is preferably tungsten, molybdenum, platinum or the like. The seal between the container 17 and the cylindrical body 6 is, in addition to the O-ring shown in FIG. 1, diffusion bonding, friction welding, friction welding after a metal thin film is formed on the surface by sputtering, glass joining, metal backing, etc. You can

【0017】円環状部材7は、例えば図2に示すように
して、容易に製造することができる。まず図2(a)に示す
ように、軟質金属からなる線材7Aを用意し、図2(b)に示
すように、線材7Aを円形に加工して両端をスポット溶接
する。図中、23は溶接による膨張部分である。次いで、
膨張部分を削り落とし、図2(c)に示す円環状部材7を得
る。
The annular member 7 can be easily manufactured, for example, as shown in FIG. First, as shown in FIG. 2 (a), a wire rod 7A made of a soft metal is prepared, and as shown in FIG. 2 (b), the wire rod 7A is processed into a circle and spot welded at both ends. In the figure, 23 is an expanded portion by welding. Then
The expanded portion is scraped off to obtain the annular member 7 shown in FIG. 2 (c).

【0018】図3に示すように、フランジ6aの下端面に
リング形状の溝19を形成することもできる。この溝19の
幅方向断面形状は長方形であり、溝19内に円環状部材7
の上半部を収容する。
As shown in FIG. 3, a ring-shaped groove 19 may be formed on the lower end surface of the flange 6a. The cross-sectional shape of the groove 19 in the width direction is rectangular, and the annular member 7 is formed in the groove 19.
Accommodates the upper half of the.

【0019】図4は、他の実施例に係る加熱装置を容器
17に取り付けた状態を示す断面図である。図1に示した
ものと同一の部材には同一の符号を付け、その説明は省
略する。本実施例では、幅の比較的広い筒状体26を用い
る。円筒状本体26c の上端に、外側へと広がる円環状の
支持フランジ26d が設けられる。円筒状本体26c の下端
に、やはり円環状のフランジ26a が突設される。容器17
の上側壁面に円形貫通孔20B が設けられ、円筒状本体26
c が円形貫通孔20b に挿通され、支持フランジ26d が容
器17の上側壁面に架け渡されている。支持フランジ26d
と容器17との間が、Oリング8によって気密にシールさ
れる。
FIG. 4 shows a heating device according to another embodiment of the present invention.
FIG. 18 is a cross-sectional view showing a state of being attached to 17. The same members as those shown in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted. In this embodiment, the tubular body 26 having a relatively wide width is used. An annular support flange 26d is provided at the upper end of the cylindrical main body 26c and extends outward. An annular flange 26a is also projectingly provided at the lower end of the cylindrical body 26c. Container 17
A circular through hole 20B is provided on the upper wall of the
The c is inserted into the circular through hole 20b, and the support flange 26d is bridged over the upper wall surface of the container 17. Support flange 26d
An O-ring 8 hermetically seals between the container 17 and the container 17.

【0020】支持部材4の上端に押え板21がボルト22に
よって締結され、フランジ26a の上に押え板21が支持さ
れる。フランジ26a と背面2bとの間に円環状部材7Bを設
置し、これによって、内側空間26b と隙間13B との間を
気密にシールする。
A holding plate 21 is fastened to the upper end of the support member 4 by bolts 22, and the holding plate 21 is supported on the flange 26a. An annular member 7B is installed between the flange 26a and the back surface 2b, and thereby the inner space 26b and the gap 13B are hermetically sealed.

【0021】本実施例においては、前述の効果に加え、
以下の効果を奏しうる。 (1) 筒状体26の直径が大きく、基体2の直径に匹敵する
ため、荷重が分散し、セラミックスの破壊が生じにく
い。 (2) 熱CVD 装置の場合には、半導体ウエハー以外に堆積
したCVD 膜をプラズマでクリーニングする必要がある。
この場合、内側空間26b にプラズマ用電極を配置するこ
とができるため、プラズマ用電極が容器内のガスの雰囲
気にさらされないという特徴がある。 (3) 内側空間26b に冷却構造を取り付けることにより、
冷却時の応答性を良好とすることができる。 (4) 内側空間26b に、半導体ウエハーのチャック面の温
度分布に合わせて断熱、冷却手段を設けることにより、
このチャック面の温度分布をコントロールできる。
In this embodiment, in addition to the above effects,
The following effects can be achieved. (1) Since the cylindrical body 26 has a large diameter and is comparable to the diameter of the substrate 2, the load is dispersed and the ceramics are less likely to be broken. (2) In the case of a thermal CVD device, it is necessary to clean the CVD film deposited other than the semiconductor wafer with plasma.
In this case, since the plasma electrode can be arranged in the inner space 26b, the plasma electrode is not exposed to the gas atmosphere in the container. (3) By installing the cooling structure in the inner space 26b,
The response during cooling can be improved. (4) By providing heat insulation and cooling means in the inner space 26b according to the temperature distribution of the chuck surface of the semiconductor wafer,
The temperature distribution on the chuck surface can be controlled.

【0022】図1に示す加熱装置を作製した。円環状部
材7は白金で形成し、基体2、円筒状体6、支持部材
4、押え板5はシリコンナイトライドで形成し、抵抗発
熱体3、端子12、電極9はタングステンで形成した。容
器17内の圧力を1×10-4mmHgとし、ヒーター表面を1000
℃に加熱し、内側空間6bにヘリウムガスを流し、リーク
試験を行った。リーク量は、6.5 ×10-9atm ・cc/秒以
下であった。
A heating device shown in FIG. 1 was produced. The annular member 7 was made of platinum, the substrate 2, the cylindrical body 6, the support member 4, and the holding plate 5 were made of silicon nitride, and the resistance heating element 3, the terminal 12, and the electrode 9 were made of tungsten. The pressure inside the container 17 is set to 1 × 10 -4 mmHg and the heater surface is set to 1000
A leak test was performed by heating to ℃ and flowing helium gas into the inner space 6b. The leak amount was 6.5 × 10 −9 atm · cc / sec or less.

【0023】上記の各例において、略円盤状の基体2、
円筒状体6、筒状体26の形状は種々変更できるし、これ
に伴って円環状部材7, 7B の平面的形状も種々変更でき
る。また、円環状部材7, 7B の幅方向断面の外形も、リ
ング状、C字形等に変更することができる。
In each of the above examples, the substantially disk-shaped base body 2,
The shapes of the cylindrical body 6 and the tubular body 26 can be variously changed, and accordingly, the planar shapes of the annular members 7 and 7B can be variously changed. Also, the outer shape of the cross section of the annular members 7, 7B in the width direction can be changed to a ring shape, a C shape, or the like.

【0024】図5は、本発明の他の実施例に係る半導体
ウエハー加熱装置を容器17に取り付けた状態を概略的に
示す断面図である。本実施例においては、支持部材27の
下端内周面にフランジ27a が設けられ、支持部材27の上
端外周面のフランジ27b が、ボルト22で容器17に固定さ
れている。円盤状基体2のフランジ2aが、円環状の断熱
材30A を介してフランジ27a 上に支持される。フランジ
2aの外周面と支持部材27との間に、断熱材30B が挟まれ
ている。断熱材30A, 30Bは、アルミナ等によって形成す
ることが好ましい。
FIG. 5 is a sectional view schematically showing a state in which a semiconductor wafer heating apparatus according to another embodiment of the present invention is attached to a container 17. In this embodiment, a flange 27a is provided on the inner peripheral surface of the lower end of the support member 27, and a flange 27b on the outer peripheral surface of the upper end of the support member 27 is fixed to the container 17 with bolts 22. The flange 2a of the disk-shaped substrate 2 is supported on the flange 27a via the annular heat insulating material 30A. Flange
A heat insulating material 30B is sandwiched between the outer peripheral surface of 2a and the support member 27. The heat insulating materials 30A and 30B are preferably made of alumina or the like.

【0025】容器17の壁面に貫通孔20C が設けられ、貫
通孔20C を囲むように上方へと円筒状の突設部28が延設
されている。円板状基体2の背面2bの上方に、円筒状体
6が設置され、フランジ部6aと背面2bとの間が円環状部
材7でシールされている。円筒状体6は、貫通孔20C を
通り、突設部28の上方まで延びている。突設部28の上端
内周と円筒状体6の外周面との間が、Oリング8Aで気密
シールされ、突設部28の外周を囲むように冷却ジャケッ
ト29が設置されている。本実施例では、端子12A に雌ネ
ジを形成し、丸棒状の電極9の先端に雄ネジを形成し、
この雌ネジと雄ネジとを螺合させる。また、熱電対11A
を背面2b側に固定してある。
A through hole 20C is provided on the wall surface of the container 17, and a cylindrical projecting portion 28 extends upward so as to surround the through hole 20C. The cylindrical body 6 is installed above the back surface 2b of the disk-shaped substrate 2, and the annular member 7 seals between the flange portion 6a and the back surface 2b. The cylindrical body 6 passes through the through hole 20C and extends above the protruding portion 28. An O-ring 8A hermetically seals between the inner periphery of the upper end of the protruding portion 28 and the outer peripheral surface of the cylindrical body 6, and a cooling jacket 29 is installed so as to surround the outer periphery of the protruding portion 28. In this embodiment, a female screw is formed on the terminal 12A, and a male screw is formed on the tip of the round rod-shaped electrode 9.
The female screw and the male screw are screwed together. Also, thermocouple 11A
Is fixed to the rear side 2b.

【0026】容器17の上側壁面に、シャフト31を、好ま
しくは複数本、ネジ止め等によって固定する。ベースプ
レート34の所定位置に貫通孔34a を設け、各貫通孔34a
にシャフト31をそれぞれ挿通する。シャフト31のうち一
部に雌ネジ(図示せず)を設け、これらにナット32を嵌
め合わせ、ナット32とベースプレート34との間に皿ばね
33を固定する。ベースプレート34の内側に円形の内側プ
レート35を設置し、内側プレート35の貫通孔に、電極9
及び熱電対11A を挿通し、電極9及び熱電対11A と内側
プレート35との間をOリング8Cでシールする。
The shaft 31 is fixed to the upper wall surface of the container 17 preferably by a plurality of shafts 31 with screws or the like. A through hole 34a is provided at a predetermined position of the base plate 34, and each through hole 34a
Insert the shaft 31 into each. A female screw (not shown) is provided on a part of the shaft 31, a nut 32 is fitted to these, and a disc spring is provided between the nut 32 and the base plate 34.
Fix 33. A circular inner plate 35 is installed inside the base plate 34, and the electrode 9 is inserted in the through hole of the inner plate 35.
And the thermocouple 11A is inserted, and the electrode 9 and the thermocouple 11A and the inner plate 35 are sealed with an O-ring 8C.

【0027】治具36の上端面に半球状の座36a を形成
し、座36a を内側プレート35の中央部に当接させる。治
具36の内側に電極9及び熱電対11A を通し、治具36の内
周面の下半部に円筒形状の窪み36b を設ける。窪み36b
の中に円筒状体6の上端部を収容し、円筒状体6の上端
面と治具36との間に、軟質金属からなる緩衝材37を挟
む。円筒状体6の外周面と、治具36の下端内周面との間
を、Oリング8で気密にシールする。治具36の下半部の
外周を囲むように、冷却ジャケット29を設置する。
A hemispherical seat 36a is formed on the upper end surface of the jig 36, and the seat 36a is brought into contact with the central portion of the inner plate 35. The electrode 9 and the thermocouple 11A are passed inside the jig 36, and a cylindrical recess 36b is provided in the lower half of the inner peripheral surface of the jig 36. Depression 36b
The upper end portion of the cylindrical body 6 is accommodated in the inside of the container, and a cushioning material 37 made of a soft metal is sandwiched between the upper end surface of the cylindrical body 6 and the jig 36. An O-ring 8 hermetically seals between the outer peripheral surface of the cylindrical body 6 and the inner peripheral surface of the lower end of the jig 36. A cooling jacket 29 is installed so as to surround the outer periphery of the lower half of the jig 36.

【0028】ナット32を締結して皿ばね33に圧縮荷重を
かけ、ベースプレート34及び内側プレート35を下方へと
押圧し、球座36a を下方へと押し下げる。この押圧力
は、治具36、緩衝材37、円筒状体6を介して、円環状部
材7、背面2bへと伝わる。シャフト31及び支持部材27
は、共に容器17に固定されている。
The nut 32 is fastened to apply a compressive load to the disc spring 33 to press the base plate 34 and the inner plate 35 downward, and the ball seat 36a downward. This pressing force is transmitted to the annular member 7 and the back surface 2b via the jig 36, the cushioning material 37, and the cylindrical body 6. Shaft 31 and support member 27
Are both fixed to the container 17.

【0029】本実施例によれば、図1の例で述べた効果
を奏しうる。しかも、押圧用部材である皿ばね33が、容
器17の外側にあることが重要である。即ち、セラミック
スヒーター1を高温にしたときにも、皿ばね33が容器外
にあることから、皿ばね33の弾性復元力は実質的に変化
しない。従って、セラミックスヒーター1が発熱すると
きにも、円環状部材7へと加わる加圧力はあまり変わら
ず、従ってこれによるシール性能も保持できる。
According to this embodiment, the effects described in the example of FIG. 1 can be obtained. Moreover, it is important that the disc spring 33, which is a pressing member, is outside the container 17. That is, even when the ceramic heater 1 is heated to a high temperature, the elastic restoring force of the disc spring 33 does not substantially change because the disc spring 33 is outside the container. Therefore, even when the ceramics heater 1 generates heat, the pressure applied to the annular member 7 does not change so much, and thus the sealing performance can be maintained.

【0030】また、内側プレート35と治具36とを別体に
したことが重要である。即ち、これらが一体であるとす
ると、皿ばね33により負荷された応力が平面的にみて円
周方向に均等に分散されていないと、セラミックス製の
円筒状体6の端面に大きな偏荷重(曲げ応力、せん断応
力)がまともにかかってしまい、円筒状体6が破壊する
おそれがある。また、プレート34, 35と、治具36を別体
にした場合にも、両部材を平面的に固体接触させるもの
とすると、接触面を非常に精度良く加工しなければ、こ
の平面同士の接触部分の公差によって偏荷重を与えるこ
とになる。このような高精度加工は、困難であり、高コ
ストでもある。本実施例では、治具36をプレートと別体
とし、かつ治具36の中心の球座36a に一旦荷重を集中さ
せることで、上記の問題を解決している。
Further, it is important that the inner plate 35 and the jig 36 are separate bodies. That is, assuming that these are integrated, if the stress applied by the disc spring 33 is not evenly distributed in the circumferential direction in a plan view, a large eccentric load (bending force) is applied to the end surface of the ceramic cylindrical body 6. Therefore, the cylindrical body 6 may be destroyed. Even when the plates 34 and 35 and the jig 36 are separate bodies, if the two members are to be brought into solid contact with each other in a plane, contact between the planes should be made unless the contact surface is processed with extremely high precision. Unbalanced loads will be given due to the tolerance of the parts. Such high-precision machining is difficult and expensive. In this embodiment, the jig 36 is separated from the plate, and the load is once concentrated on the ball seat 36a at the center of the jig 36 to solve the above problem.

【0031】また、銅、金、ニッケル等からなる緩衝材
37を円筒状体6の端面に当接させることで、この端面に
かかる偏荷重を緩和し、円筒状体6を構成するセラミッ
クスの破壊や欠けを防止する。また、本例では、円筒状
体6と容器17との間を、ゴム製のOリング8Aでシールし
ている。本発明者は、メタルパッキングについても検討
したが、加工時の寸法精度とコストの点で不利であっ
た。しかし、セラミックスヒーター1を高温にすると、
大量の熱が発生し、Oリング8Aが溶けるおそれがでてく
る。そこで、延設部28の先端でシールすることでOリン
グ8Aとヒーターとの間隔を大きくし、かつ冷却ジャケッ
ト29でOリング8Aの周辺を冷却する。また、上記と同様
の理由から、治具36と円筒状体6との間をOリング8Bで
シールし、かつその外側に冷却ジャケット29を設置す
る。
A cushioning material made of copper, gold, nickel or the like
By bringing 37 into contact with the end face of the cylindrical body 6, an eccentric load applied to this end face is relaxed, and the ceramics constituting the cylindrical body 6 are prevented from being broken or chipped. Further, in this example, the space between the cylindrical body 6 and the container 17 is sealed by a rubber O-ring 8A. The present inventor also studied metal packing, but was disadvantageous in terms of dimensional accuracy and cost during processing. However, if the ceramic heater 1 is heated to a high temperature,
A large amount of heat is generated, which may melt the O-ring 8A. Therefore, the gap between the O-ring 8A and the heater is increased by sealing at the tip of the extended portion 28, and the periphery of the O-ring 8A is cooled by the cooling jacket 29. For the same reason as above, the jig 36 and the cylindrical body 6 are sealed with an O-ring 8B, and a cooling jacket 29 is installed on the outside thereof.

【0032】また、断熱材30A, 30Bによって、セラミッ
クスヒーター1の熱が支持部材27へと伝わるのを防止す
る。こうした支持部材27は金属製であり、高温に曝され
ると熱膨脹し、半導体ウエハー設置面の容器中における
位置がズレるため、生産性が低下する場合がある。ま
た、支持部材27中の金属成分の一部が、高温中で蒸散
し、汚染源となるおそれがある。そこで、断熱材30A, 3
0Bで、支持部材27の温度上昇を極力抑えた。
The heat insulating materials 30A and 30B prevent the heat of the ceramic heater 1 from being transferred to the support member 27. Such a supporting member 27 is made of metal and thermally expands when exposed to a high temperature, and the position of the semiconductor wafer mounting surface in the container is displaced, which may reduce the productivity. Further, a part of the metal component in the support member 27 may evaporate at high temperature and become a pollution source. Therefore, the heat insulating material 30A, 3
With 0B, the temperature rise of the support member 27 was suppressed as much as possible.

【0033】また、断熱材30A, 30Bを構成する材料とし
ては、アルミナが好ましい。本発明者は、ClF3, NF3
のハロゲン系腐蝕性ガスに対してアルミナが安定である
ことを確認している。ただし、アルミナは引張強度が低
いが、本例では、断熱材30Aには圧縮応力がかかってい
るので、これらをアルミナで形成しても、破壊はしにく
い。またアルミナからなる断熱材30A を厚くすると、ア
ルミナの耐熱衝撃性が低いことから、熱衝撃破壊を起こ
すおそれがある。そこで、例えば厚さ1.5 mmの薄い板で
断熱材30A を形成し、かつ断熱材30A を2枚以上積層す
ることで、断熱材30A の熱衝撃破壊を防止した。
Alumina is preferable as a material for the heat insulating materials 30A and 30B. The present inventor has confirmed that alumina is stable against halogen-based corrosive gases such as ClF 3 and NF 3 . However, although alumina has a low tensile strength, in this example, since the heat insulating material 30A is subjected to compressive stress, even if these are formed of alumina, they are not easily broken. Further, if the heat insulating material 30A made of alumina is thickened, the thermal shock resistance of alumina is low, so that there is a risk of thermal shock fracture. Therefore, for example, the heat insulating material 30A is formed of a thin plate having a thickness of 1.5 mm, and two or more heat insulating materials 30A are laminated to prevent thermal shock destruction of the heat insulating material 30A.

【0034】[0034]

【発明の効果】本発明の加熱装置によれば、従来の金属
ヒーターの場合のような汚染や、間接加熱方式の場合の
ような熱効率の悪化の問題を解決できる。また、電極、
端子等が容器の内部空間の雰囲気に曝されていないの
で、電極等の腐食、電極からの汚染、さらには、真空中
での電極間又は電極と容器との間の放電、漏電のおそれ
がない。
According to the heating device of the present invention, it is possible to solve the problems such as the contamination as in the case of the conventional metal heater and the deterioration of the thermal efficiency as in the case of the indirect heating method. Also, the electrodes,
Since the terminals, etc. are not exposed to the atmosphere of the inner space of the container, there is no risk of corrosion of the electrodes, contamination from the electrodes, discharge between the electrodes in a vacuum or between the electrode and the container, and electric leakage. ..

【0035】また、筒状体とセラミックスヒーターと
を、軟質金属からなる環状部材でシールできることが重
要であり、これによりシールが非常に容易になるし、か
つ安定になり、また製造も容易になる。また筒状体とセ
ラミックスヒーターが別体であるので、いずれかにクラ
ック等の故障が生じた場合は、両者を分離し、故障した
方だけを交換することができる。また、環状部材に応力
緩和作用があるので、筒状体やセラミックスヒーターが
破壊しにくい。また、筒状体を盤状基体の方へと押圧す
る押圧用部材を備えており、この押圧用部材による押圧
力を調整することで、環状部材に加わる圧力を調整し、
そのシール性能を調整することができる。
Further, it is important that the tubular member and the ceramics heater can be sealed with an annular member made of a soft metal, which makes sealing very easy and stable, and facilitates manufacturing. .. In addition, since the cylindrical body and the ceramic heater are separate bodies, if a failure such as a crack occurs in either of them, the two can be separated and only the failed one can be replaced. In addition, since the annular member has a stress relieving action, the tubular body and the ceramic heater are less likely to break. In addition, a pressing member that presses the tubular body toward the disk-shaped substrate is provided, and by adjusting the pressing force by this pressing member, the pressure applied to the annular member is adjusted,
The sealing performance can be adjusted.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例に係る加熱装置を容器17に取り
付けた状態を示す断面図である。
FIG. 1 is a cross-sectional view showing a state in which a heating device according to an embodiment of the present invention is attached to a container 17.

【図2】(a), (b)及び(c) は、円環状部材7の各作製段
階を示す平面図である。
2 (a), (b) and (c) are plan views showing respective steps of producing the annular member 7. FIG.

【図3】円環状部材7を溝19に収容する例について図示
する部分拡大断面図である。
FIG. 3 is a partially enlarged sectional view illustrating an example in which the annular member 7 is housed in a groove 19.

【図4】他の実施例に係る加熱装置を容器17に取り付け
た状態を示す断面図である。
FIG. 4 is a cross-sectional view showing a state in which a heating device according to another embodiment is attached to a container 17.

【図5】更に他の実施例に係る加熱装置を容器17に取り
付けた状態を示す断面図である。
FIG. 5 is a cross-sectional view showing a state in which a heating device according to another embodiment is attached to a container 17.

【符号の説明】[Explanation of symbols]

1 セラミックスヒーター 2 円盤状基体 2b 背面 3 抵抗発熱体 4,27 支持部材 6 円筒状体 7, 7B 円環状部材 9 電極 11, 11A 熱電対 12, 12A 端子 22 ボルト(押圧用部材の例) 26 筒状体 33 皿ばね(押圧用部材の例) 1 Ceramics heater 2 Disc-shaped substrate 2b Back surface 3 Resistance heating element 4,27 Supporting member 6 Cylindrical body 7, 7B Annular member 9 Electrode 11, 11A Thermocouple 12, 12A terminal 22 Bolt (example of pressing member) 26 Tube Shape 33 Disc spring (example of pressing member)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 緻密質セラミックスからなる盤状基体の
内部に抵抗発熱体を埋設してなるセラミックスヒーター
と、緻密質セラミックスからなり、両端が開口している
筒状体と、前記盤状基体と前記筒状体の端面との間に設
置された軟質金属製の環状部材と、前記セラミックスヒ
ーターの側周面を支持する支持部材と、前記筒状体を前
記盤状基体の方へと押圧する押圧用部材とを備え、前記
盤状基体及び前記筒状体を前記環状部材に押しつけるこ
とにより前記盤状基体と前記筒状体との間を気密にシー
ルできるように構成された、半導体ウエハー加熱装置。
1. A ceramic heater in which a resistance heating element is embedded in a board-shaped substrate made of dense ceramics, a cylindrical body made of dense ceramics and having both ends opened, and the board-shaped substrate. An annular member made of a soft metal installed between the end face of the tubular body, a support member supporting the side peripheral surface of the ceramics heater, and the tubular body being pressed toward the plate-shaped substrate. A semiconductor wafer heating device that includes a pressing member, and is configured to seal the space between the plate-shaped base body and the cylindrical body by pressing the plate-shaped base body and the cylindrical body against the annular member. apparatus.
【請求項2】 前記押圧用部材が、実質的に恒温状態に
あるばねであることを特徴とする、請求項1記載の半導
体ウエハー加熱装置。
2. The semiconductor wafer heating apparatus according to claim 1, wherein the pressing member is a spring in a substantially constant temperature state.
JP04064760A 1992-03-23 1992-03-23 Semiconductor wafer heating equipment Expired - Lifetime JP3131010B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04064760A JP3131010B2 (en) 1992-03-23 1992-03-23 Semiconductor wafer heating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04064760A JP3131010B2 (en) 1992-03-23 1992-03-23 Semiconductor wafer heating equipment

Publications (2)

Publication Number Publication Date
JPH05267191A true JPH05267191A (en) 1993-10-15
JP3131010B2 JP3131010B2 (en) 2001-01-31

Family

ID=13267460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04064760A Expired - Lifetime JP3131010B2 (en) 1992-03-23 1992-03-23 Semiconductor wafer heating equipment

Country Status (1)

Country Link
JP (1) JP3131010B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243495A (en) * 2002-10-30 2003-08-29 Ibiden Co Ltd Ceramic substrate
US7268321B2 (en) 2002-09-18 2007-09-11 Sumitomo Electric Industries, Ltd. Wafer holder and semiconductor manufacturing apparatus
US7285152B2 (en) 2003-05-08 2007-10-23 Sumitomo Electric Industries, Ltd. Method of manufacturing chain-structure metal powder
JP2010135448A (en) * 2008-12-03 2010-06-17 Advanced Display Process Engineering Co Ltd Sensing unit and substrate processing apparatus having same
US7837798B2 (en) 2002-03-05 2010-11-23 Sumitomo Electric Industries, Ltd. Semiconductor processing apparatus with a heat resistant hermetically sealed substrate support
CN110959306A (en) * 2018-07-13 2020-04-03 日本碍子株式会社 Ceramic heater

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4060684B2 (en) 2002-10-29 2008-03-12 日本発条株式会社 stage

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7837798B2 (en) 2002-03-05 2010-11-23 Sumitomo Electric Industries, Ltd. Semiconductor processing apparatus with a heat resistant hermetically sealed substrate support
US7268321B2 (en) 2002-09-18 2007-09-11 Sumitomo Electric Industries, Ltd. Wafer holder and semiconductor manufacturing apparatus
JP2003243495A (en) * 2002-10-30 2003-08-29 Ibiden Co Ltd Ceramic substrate
US7285152B2 (en) 2003-05-08 2007-10-23 Sumitomo Electric Industries, Ltd. Method of manufacturing chain-structure metal powder
JP2010135448A (en) * 2008-12-03 2010-06-17 Advanced Display Process Engineering Co Ltd Sensing unit and substrate processing apparatus having same
CN110959306A (en) * 2018-07-13 2020-04-03 日本碍子株式会社 Ceramic heater
CN110959306B (en) * 2018-07-13 2022-02-11 日本碍子株式会社 Ceramic heater

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