JPH05267115A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) [Summary] [Object] The present invention relates to a method for manufacturing a semiconductor device, in which a resist pattern can be formed with the same shift amount without being affected by the opening size, and the dimensional accuracy of the pattern in the entire exposure region can be improved. An object of the present invention is to provide a method of manufacturing a semiconductor device that can be improved. In a method of transferring a mask pattern to a resist on a wafer by using a mask having a mask pattern composed of a light shielding film pattern having different opening dimensions in an exposure area, the resist pattern shift amount with respect to the mask pattern is the same exposure amount. A mask is formed so that an optimum shift amount is given for each opening size of the mask pattern so that the mask pattern of the mask is transferred to a resist to form a resist pattern. To do.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more specifically, it uses a mask having a mask pattern such as a chrome pattern having different opening sizes in the same exposure area to form a mask pattern on a resist on a wafer. The present invention can be applied to a transfer method, and particularly relates to a semiconductor device manufacturing method capable of forming a resist pattern with the same shift amount without being affected by the opening size.

In recent years, with the high integration of semiconductor devices,
Although the pattern for forming each semiconductor element is miniaturized, the dimensional difference from the pattern for forming a peripheral circuit and the like is also increasing. Therefore, a method of manufacturing a semiconductor device capable of transferring all patterns from a pattern having the largest opening size to a pattern having the smallest opening size in the same exposure area on a mask as a resist pattern on a wafer with higher accuracy is provided. Is required.

[0003]

2. Description of the Related Art A method of forming a resist pattern is a method of transferring a mask pattern to a resist on a wafer by using a mask having a mask pattern composed of a light shielding film pattern of Cr or the like having different opening dimensions in an exposure region. There is. As described above, when transferring a mask pattern to a resist, conventionally, a pattern of the light-shielding film pattern on the mask, which has the strictest dimension control (for example, a pattern near the resolution limit), is formed as an optimum resist pattern. To give an exposure amount that

[0004]

However, in the above-described conventional method for manufacturing a semiconductor device, in the pattern near the resolution limit where the size control should be performed most strictly, the shift of the resist pattern size with respect to the mask pattern opening size on the mask is shifted. When the amount is the optimum value, the shift amount becomes larger than the optimum value when using the positive resist when the pattern size is larger than the pattern in the vicinity of the resolution limit where dimensional control is most strict. In a pattern smaller than the pattern near the image limit, the shift amount becomes smaller than the optimum value. As described above, when the opening dimension is increased or decreased with respect to the pattern near the resolution limit, the pattern fidelity is changed in each pattern. Therefore, when it is necessary to form a resist pattern so that the shift amount from the mask pattern is the same for two or more types of patterns having different opening sizes among the mask patterns on the same exposure region of the mask. Cannot perform the same shift amount, and exposure is performed with an exposure amount intermediate between the respective exposure amounts where the shift amount of the pattern having each opening size is optimum.
Therefore, two or more types of patterns having different opening sizes cannot be formed as resist patterns having the same shift amount, which causes a problem that the dimensional accuracy is reduced.

Therefore, the present invention provides a method of manufacturing a semiconductor device, which can form a resist pattern with the same shift amount without being affected by the opening size and improve the dimensional accuracy of the pattern in the entire exposure region. It is intended to be provided.

[0006]

In order to achieve the above-mentioned object, a method of manufacturing a semiconductor device according to the present invention uses a mask having a mask pattern composed of a light shielding film pattern having different opening sizes in an exposure area to form a resist on a wafer. In the method of transferring the mask pattern, a mask formed by giving an optimum shift amount for each opening dimension of the mask pattern is used so that the resist pattern shift amount with respect to the mask pattern becomes the same at the same exposure amount. It includes a step of forming a resist pattern by transferring the mask pattern of the mask to a resist.

Examples of the mask according to the present invention include a mask used in a batch transfer exposure apparatus and a mask called a reticle used in a stepper.

[0008]

In the present invention, as shown in FIG. 1 which will be described later, a mask 3 in which an optimum shift amount is added to the mask pattern 3b for each opening size is used, and the mask pattern 3b of this mask 3 is used.
Since the resist pattern 4 is transferred to the resist to form the resist pattern 4, the resist pattern 4 can be formed with the same shift amount without being affected by the opening size.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. Figure
1 is a semiconductor device manufacturing method according to an embodiment of the present invention.
FIG. 6 is a diagram illustrating a method of forming a resist pattern in FIG.
It In FIG. 1, P₁~ P_FourIs design data, and
L shown in 1 (b)₁~ L_FourIs the opening size, 1 is the design
Data P₁~ P _FourOpening size l₁~ L_FourFormed based on
The mask 1 is a mask made of quartz glass or the like.
The plate 1a and the dimensions formed on the substrate 1a are l₁
~ L_FourLight shielding film such as Cr having a square opening
And a mask pattern 1b consisting of turns
It Next, 2 is the setting data P₁~ P_FourFormed based on
The mask pattern 1b of the mask 1 thus formed is transferred and formed.
Is a resist pattern formed by₁₁~ L₁₄Resist
Each opening size of pattern 2 is S₁~ S_FourIs a mask
It is the shift amount of the resist pattern 2 with respect to the turn 1b.
It Next, 3 is a resist for the mask pattern 1b
Shift amount S of pattern 2₁~ S_FourTo cancel
Mask pattern formed on the substrate 3a such as quartz glass for
Shift amount to the mask pattern 3b for each opening size of the screen 3b
t₁~ T_FourIs a mask with₁~ L_FourMa
The shift amount t for each opening dimension of the mask pattern 3b₁~ T_FourBut
It is each opening size of the added mask 3. And 4 is
The mask pattern 3b of the mask 3 is transferred and formed.
This is a distant pattern and is shown in FIG.₁~ L_FourIs
The opening dimensions of the resist pattern 4 are shown.

Next, the step of forming the resist pattern will be described. First, as shown in FIG. 1 (a), based on the opening dimension l ₁ to l ₄ of the design data P ₁ to P ₄ 1
As shown in (b), a mask 1 having a mask pattern 1b having square openings having opening sizes of l ₁ to l ₄ is formed. Then, as shown in FIG. 1 (c), a resist pattern 2 opening dimension is l ₁₁ to l ₁₄ by transferring the mask pattern 1b of the mask 1 in the resist. In this transfer, the exposure amount is such that the opening size l ₁₁ of the resist pattern 2 is the optimum value with respect to the opening size l ₁ of the mask 1 near the resolution limit where the size of the opening is the smallest and the size control is most strict. To do. Therefore, the mask pattern 1
The shift amount of the resist pattern 2 with respect to b is Sn = l ₁
n-ln, and S ₁ = O (l
₁₁ ) <S ₂ (l ₁₂ ) <S ₃ (l ₁₃ ) <S ₄ (l ₁₄ ), and the shift amount gradually increases as the aperture size increases.

Next, as shown in FIG. 2, this shift amount S
₁ to S ₄ the optimum shift amount T ₁ through T ₄ to be added to the mask pattern 3b shown in FIG. 1 (d) necessary for canceling the
Ask for. Then, a mask pattern 3b which opening dimension on the basis of the shift amount T ₁ through T ₄ is L ₁ ~L _4. Then, by using the mask 3 in which the optimum shift amounts T _{1 to} T ₄ are added to the mask pattern 3b for each opening size, and transferring the mask pattern 3b of the mask 3 to the resist, as shown in FIG. , Design data P _{1 to} P
Mask pattern 1b of mask 1 formed based on ₄
It is possible to obtain the resist pattern 4 having the same opening size as the opening sizes l _{1 to} l ₄ .

As described above, in this embodiment, the mask 3 in which the optimum shift amounts T _{1 to} T ₄ are added to the mask pattern 3b for each opening size is used, and the mask pattern 3 of this mask 3 is used.
Since b is transferred to the resist to form the resist pattern 4, the resist pattern can be formed with the same shift amount without being affected by the opening size.
Therefore, it is possible to improve the dimensional accuracy of the pattern in the entire exposure region and improve the characteristics of the semiconductor device.

In the above embodiment, the case where a resist pattern having a square opening shape is formed using a mask having a square opening shape has been described, but the present invention is not limited to this. Instead, the resist pattern may have a rectangular or triangular opening shape using a mask in which the opening shape of the mask pattern is rectangular or triangular.

[0014]

According to the present invention, the resist pattern can be formed with the same shift amount without being affected by the opening size, and the dimensional accuracy of the pattern in the entire exposure region can be improved, and the semiconductor device of the semiconductor device can be manufactured. There is an effect that the characteristics can be improved.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a method of forming a resist pattern in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a method of obtaining an optimum shift amount to be added to a mask pattern of a mask according to an embodiment of the present invention.

[Explanation of symbols]

 1 Mask 1a Substrate 1b Mask Pattern 2 Resist Pattern 3 Mask 3a Substrate 3b Mask Pattern 4 Resist Pattern

Claims (1)

[Claims] 1. A method for transferring a mask pattern to a resist on a wafer by using a mask having a mask pattern composed of a light shielding film pattern having different opening sizes in an exposure area, wherein the exposure amount is the same as the resist pattern shift amount with respect to the mask pattern. A step of forming a resist pattern by transferring the mask pattern of the mask to a resist using a mask formed by giving an optimum shift amount for each opening dimension of the mask pattern so that the mask patterns have the same amount. A method for manufacturing a semiconductor device, comprising: