JPH03215861A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPH03215861A
JPH03215861A JP1109690A JP1109690A JPH03215861A JP H03215861 A JPH03215861 A JP H03215861A JP 1109690 A JP1109690 A JP 1109690A JP 1109690 A JP1109690 A JP 1109690A JP H03215861 A JPH03215861 A JP H03215861A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
pattern
patterns
device
line
transferred
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1109690A
Inventor
Manabu Tominaga
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve the electric characteristic and the yield of a device by comparing a transfer pattern to be masked with the shape of a pattern formed on a mask and correcting the pattern of the mask whose fidelity is deteriorated.
CONSTITUTION: The line patterns 12a - 12e are obtained when the line patterns 11a - 11e are transferred on a wafer being a side to be transferred by an exposure device and the patterns 12a - 12e are compared with the patterns 11a - 11e. By the aberration of the lens of the exposure device, the shape of the pattern 12a on the left side among the patterns 12a - 12e is smaller than the pattern 11a and the shape of the pattern 12e on the right side is larger than the pattern 11e. However, when the deformed quantity thereof is over a prescribed allowable quantity, the shapes of the patterns 11a and 11e are corrected and formed so that the pattern 11a becomes large by as much as the deterioration of the fidelity {a broken line (c)} and the pattern 11e becomes small by as much as the deterioration of the fidelity {a broken line (d)}. Then, the patterns 11a - 11e are transferred on the wafer by the exposure device.
COPYRIGHT: (C)1991,JPO&Japio
JP1109690A 1990-01-19 1990-01-19 Formation of pattern Pending JPH03215861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1109690A JPH03215861A (en) 1990-01-19 1990-01-19 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1109690A JPH03215861A (en) 1990-01-19 1990-01-19 Formation of pattern

Publications (1)

Publication Number Publication Date
JPH03215861A true true JPH03215861A (en) 1991-09-20

Family

ID=11768473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1109690A Pending JPH03215861A (en) 1990-01-19 1990-01-19 Formation of pattern

Country Status (1)

Country Link
JP (1) JPH03215861A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5426007A (en) * 1992-06-25 1995-06-20 Seiko Epson Corporation Photomask and process of making semiconductor device by the use of the photomask
US5436095A (en) * 1991-07-11 1995-07-25 Hitachi, Ltd. Manufacturing method or an exposing method for a semiconductor device for a semiconductor integrated circuit device and a mask used therefor
JPH08339074A (en) * 1995-03-22 1996-12-24 Hyundai Electron Ind Co Ltd Manufacture of exposure mask
US6548312B1 (en) 1999-08-27 2003-04-15 Hitachi, Ltd. Manufacturing method of semiconductor integrated circuit devices and mask manufacturing methods

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436095A (en) * 1991-07-11 1995-07-25 Hitachi, Ltd. Manufacturing method or an exposing method for a semiconductor device for a semiconductor integrated circuit device and a mask used therefor
US5426007A (en) * 1992-06-25 1995-06-20 Seiko Epson Corporation Photomask and process of making semiconductor device by the use of the photomask
JPH08339074A (en) * 1995-03-22 1996-12-24 Hyundai Electron Ind Co Ltd Manufacture of exposure mask
US6548312B1 (en) 1999-08-27 2003-04-15 Hitachi, Ltd. Manufacturing method of semiconductor integrated circuit devices and mask manufacturing methods

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