JPH0526354B2 - - Google Patents
Info
- Publication number
- JPH0526354B2 JPH0526354B2 JP58049318A JP4931883A JPH0526354B2 JP H0526354 B2 JPH0526354 B2 JP H0526354B2 JP 58049318 A JP58049318 A JP 58049318A JP 4931883 A JP4931883 A JP 4931883A JP H0526354 B2 JPH0526354 B2 JP H0526354B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- crystalline
- semiconductor
- cell
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 86
- 239000010409 thin film Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H01L31/0236—
-
- H01L31/03685—
-
- H01L31/078—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58049318A JPS59175170A (ja) | 1983-03-24 | 1983-03-24 | タンデム型太陽電池 |
| US06/528,988 US4496788A (en) | 1982-12-29 | 1983-09-02 | Photovoltaic device |
| DE8383112159T DE3379565D1 (en) | 1982-12-29 | 1983-12-02 | Photovoltaic device |
| EP83112159A EP0113434B2 (fr) | 1982-12-29 | 1983-12-02 | Dispositif photovoltaique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58049318A JPS59175170A (ja) | 1983-03-24 | 1983-03-24 | タンデム型太陽電池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59175170A JPS59175170A (ja) | 1984-10-03 |
| JPH0526354B2 true JPH0526354B2 (fr) | 1993-04-15 |
Family
ID=12827612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58049318A Granted JPS59175170A (ja) | 1982-12-29 | 1983-03-24 | タンデム型太陽電池 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59175170A (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63180952U (fr) * | 1987-05-13 | 1988-11-22 | ||
| JP2738557B2 (ja) * | 1989-03-10 | 1998-04-08 | 三菱電機株式会社 | 多層構造太陽電池 |
| JPH0795603B2 (ja) * | 1990-09-20 | 1995-10-11 | 三洋電機株式会社 | 光起電力装置 |
| JPH05299677A (ja) * | 1992-04-24 | 1993-11-12 | Fuji Electric Co Ltd | 太陽電池およびその製造方法 |
| DE69811511T2 (de) * | 1997-03-21 | 2004-02-19 | Sanyo Electric Co., Ltd., Moriguchi | Herstellungsverfahren für ein photovoltaisches bauelement |
| WO2008124160A2 (fr) * | 2007-04-09 | 2008-10-16 | The Regents Of The University Of California | Jonctions à effet tunnel à faible résistance destinées à des cellules solaires tandem à haut rendement |
| US7947523B2 (en) | 2008-04-25 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
| US7951656B2 (en) | 2008-06-06 | 2011-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN104350607B (zh) | 2012-06-13 | 2018-01-12 | 三菱电机株式会社 | 太阳能电池及其制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633888A (en) * | 1979-08-29 | 1981-04-04 | Seiko Epson Corp | Solar battery |
| JPS5713185A (en) * | 1980-06-26 | 1982-01-23 | Asahi Chem Ind Co Ltd | Photoelectrolysis device |
| JPS5760875A (en) * | 1980-09-25 | 1982-04-13 | Sharp Corp | Photoelectric conversion element |
| JPS57124482A (en) * | 1981-01-27 | 1982-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Solar cell |
-
1983
- 1983-03-24 JP JP58049318A patent/JPS59175170A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633888A (en) * | 1979-08-29 | 1981-04-04 | Seiko Epson Corp | Solar battery |
| JPS5713185A (en) * | 1980-06-26 | 1982-01-23 | Asahi Chem Ind Co Ltd | Photoelectrolysis device |
| JPS5760875A (en) * | 1980-09-25 | 1982-04-13 | Sharp Corp | Photoelectric conversion element |
| JPS57124482A (en) * | 1981-01-27 | 1982-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59175170A (ja) | 1984-10-03 |
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