JPH05263216A - Method for forming metallic pattern on substrate and production of thin-film magnetic head - Google Patents

Abstract

PURPOSE:To form metallic patterns on a substrate by enabling stable lifting off without generation of the unstability of a lift-off and a change in the shape of the patterns and patterning without the generation of the change in the shape, thereby enabling the formation of the fine patterns by smooth stages. CONSTITUTION:This method includes a stage for successively laminating a first SiO2 layer 2 and a second 2MgO SiO2 layer 3 on a substrate 1, a stage for forming the resist substrates 4 on the above-mentioned second layer, a stage for forming the groove parts of the patterns by selectively removing the first layer 2 and the second layer 3, a stage for removing the above- mentioned resist patterns 4, a stage for coating the surface of the second layer 2 and the groove parts of the patterns with a metallic layer, a stage for removing the metallic layer with which the surface of the second layer 2 is coated until at least a part thereof of the second layer 2 appears exclusive of at least a part of the metallic layer in the groove parts of the patterns and a stage for removing the second layer 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a metal pattern on a substrate and a method of manufacturing a thin film magnetic head,
According to the first viewpoint, the former method is particularly useful for forming a conductor layer or magnetic layer of a thin film magnetic head or the like, and according to the second viewpoint, the latter method is more detailed in the thin film magnetic head. The present invention relates to a method for removing a protective layer formed on a pad portion of a conductor layer.

[0002]

2. Description of the Related Art With respect to the first aspect, the technology of forming a metal layer on a substrate in accordance with a predetermined pattern is in the field of thin film magnetic heads, electronic devices, etc. in response to recent advances in electronic circuit technology. This is an important technique, and various improvements have been tried so far.

A conventional method of forming a metal pattern will be described with reference to FIG. 2 by taking as an example a method of forming a conductor pattern by a lift-off method using a photoresist employed in a thin film magnetic head.

On the substrate 11 whose surface is polished as a mirror surface, an insulating layer 12, a first resist layer 13 and a second resist layer are provided.
14 are sequentially stacked. The first resist layer 13 and the second resist layer 14 are both formed of resist materials made of an organic material and having different etching rates, or only the upper part of the first resist layer made of an organic material is chemically treated to form a first resist layer. A second resist layer can also be used (Fig. (A)).

Next, the first resist layer 13 and the second resist layer 14 are selectively removed by etching to form a pattern groove portion 16 and an exposed surface 12A of the insulating layer 12 is formed on the bottom surface of the groove. At this time, the first resist layer 13 is undercut by utilizing the difference in etching rate between the first and second resist layers to form an overbang 14A in the second resist layer 14 for facilitating lift-off. Yes (the same figure
(B)).

Next, the conductor layer 15 is formed by sputtering or vacuum deposition. The conductor layer 15 is formed on the surface of the second resist layer 14 and the groove 16 on the exposed surface 12A of the insulating layer 12, as shown in FIG. Finally, the respective resist layers are sequentially removed through a suitable etching solution such as the second resist layer 14 and the first resist layer 13, respectively.
The conductor layer 15 as shown in (D), that is, a fine pattern of metal is left on the insulating layer 12 on the substrate 11. Thereafter, another insulating layer is formed in the gap 15A between the conductor layers, and the upper surface of the conductor layer and the upper surface of the other insulating layer formed in the gap are flattened.

In relation to the second aspect of the present invention, the thin film magnetic head is bulky due to its possibility of downsizing and good high frequency characteristics due to the recent demand for higher recording density in magnetic storage devices. The magnetic head tends to be used more and more frequently.

As shown in FIG. 4 which is a plan view of the thin film magnetic head except the protective layer of the electromagnetic conversion element portion, the thin film magnetic head 10 has an electromagnetic conversion element portion on a magnetic or non-magnetic substrate 1. Upper and lower magnetic layers 2 and 6 made of sendust or amorphous, and a coil conductor layer 4 made of conductive material such as Cu (coil portion 4a and pad portion 4b)
And an insulating layer or the like made of an organic material or an inorganic material is laminated and formed through a predetermined thin film forming means and fine processing means, and a protective layer that covers the whole from above and mechanically protects the thin film magnetic head is finally formed. It is formed.

In the electromagnetic transducer thus formed, signals are exchanged between the magnetic gap 9 formed at the tips of the upper and lower magnetic films 2 and 6 and the magnetic recording medium. This signal is transmitted to and received from the lower magnetic film and the coil portion conductor layer 4a, and this signal is transmitted to the pad portion 4b (terminal) integrally formed by being connected to the coil portion conductor layer 4a and formed integrally with each other. A signal is transmitted between the electronic circuit and the external electronic circuit.

In the conventional thin film magnetic head, the entire pad portion 4b, which is formed in contact with the coil portion conductor layer 4a and serves as a connection portion with an external wire, is once covered with a protective layer which is the final layer. It was removed again by etching later. As an etching method, there have been used a dry etching method such as an ion beam etching method using argon or a reactive etching method using a fluorocarbon gas, and a wet etching method using hydrofluoric acid. There is also proposed a method in which the formation of such a thick protective layer is blocked by a mask, and then only the protective layer which cannot be blocked by the mask is removed by wet etching using hydrofluoric acid.

[0011]

In relation to the first aspect of the present invention, in the conventional metal pattern forming method, a pattern of photoresist layers 13 and 14 made of an organic material having a two-layer structure is formed, For example, a fine pattern of metal such as a coil conductor layer of a magnetic thin film head is formed by sputtering, vacuum deposition or the like through the pattern of these photoresist layers.

Generally, a photoresist layer made of an organic material is inferior in heat resistance to an inorganic material, and is affected by heat when forming a metal film during sputtering or vapor deposition,
The pattern shape itself is changed, or the property as a resist material is changed by heat curing or the like, and the dissolution property in an etchant is apt to change. Due to this shape change, there is a problem that a desired metal pattern cannot be obtained, or the resist layer is not completely removed (lifted off) due to a change in the dissolution property, and a desired metal pattern cannot be formed.

In view of the above problems, the present invention is a method of forming a metal pattern on a substrate, wherein the resist pattern shape may change during sputtering or vacuum deposition, and an etching solution may be used. Eliminating the risk of incomplete resist removal due to changes in dissolution characteristics, thereby providing an improved method for forming a metal pattern that enables accurate fine pattern formation and easy resist lift-off. The purpose is to do.

Further, in the first aspect, the present invention provides a method for forming a metal pattern for achieving the above object, which is capable of obtaining a good flat surface without causing unevenness on the surface of the metal layer during patterning. It is also intended to do.

In relation to the second aspect of the present invention, in the conventional method for manufacturing a thin film magnetic head, in the case of removing the protective layer of the pad portion by dry etching, a vacuum chamber for dry etching is used. However, there is a problem that the manufacturing cost rises because this equipment is extremely large-scale. On the other hand, in the case of removing the protective layer by wet etching using hydrofluoric acid, hydrofluoric acid is highly dangerous because it has extremely strong chemical properties and is harmful. There is a problem that special care must be taken when handling hydrofluoric acid.

According to a second aspect of the present invention, when removing the protective layer employed in the conventional method for manufacturing a thin film magnetic head as described above, the protective layer is removed at the lowest possible cost, and the etching step and An object of the present invention is to provide a method for manufacturing a thin film magnetic head improved by adopting a method of removing a protective layer which is less dangerous in handling.

[0017]

In a first aspect of the present invention, the object is to provide at least two layers on the substrate (first
Layer (bottom layer) and second or more inorganic material layers are sequentially laminated (a), a resist pattern is formed on the inorganic material layer (b), the inorganic material layer is used as a mask. (C) of selectively removing the above to form a patterned groove portion, step (d) of removing the resist pattern, and step (e) of covering the surface of the uppermost layer of the inorganic material layer and the groove portion with a metal layer. ), Leaving at least a part of the metal layer of the groove part, and removing the metal layer covering the surface of the uppermost layer of the inorganic material layer until at least a part of the uppermost layer of the inorganic material layer appears. f), and a step (g) of removing at least one inorganic material layer including at least the uppermost layer of the inorganic material layer, and thereby achieving the method for forming a metal pattern on a substrate.

In the step (g), preferably, a layer including at least the lowermost layer among the inorganic material layers is left.

The step (c) is preferably carried out using different etching media having different etching characteristics for the layer including at least the lowermost layer and the layer including at least the uppermost layer of the inorganic material layers.

The etching medium is preferably an etching solution having a selective solubility with respect to the layer containing at least the lowermost layer or the layer containing at least the uppermost layer, respectively.

The step (a) is preferably performed by forming a layer containing at least the lowermost layer insoluble in the carboxylic acid solution and a layer containing at least the uppermost layer soluble in the carboxylic acid solution. ), A carboxylic acid solution is used for selective etching of a layer including at least the uppermost layer of the inorganic material layers, and an etching solution that selectively etches a layer including at least the lowermost layer is used. Used for etching the layer.

The layer including at least the uppermost layer of the inorganic material layers is preferably a 2MgO.SiO ₂ layer.

The layer including at least the lowermost layer of the inorganic material layers is preferably a SiO ₂ layer.

The 2MgO.SiO ₂ layer is preferably formed by sputtering in a mixed gas of an inert gas and oxygen under reduced pressure. For example, it is formed by sputtering in a mixed gas of 95% Ar and 5% O ₂ (pressure of about 0.4 Pa).

The step (f) is preferably performed by ion beam etching in which the ion beam is irradiated at an ion incident angle of 75 ° or more with respect to the normal line of the substrate.

The layer including at least the uppermost layer among the inorganic material layers after the step (c) preferably has a slope not larger than the ion incident angle in the step (f).

As the inorganic material layer, for example, SiO ₂ ,
_{Al 2 O 3, MgO, 2MgO} -SiO 2, oxides of GeO ₂ or the like is used. In order to selectively remove the inorganic material layer, ion beam etching, wet etching with acid or the like, reactive etching or the like can be adopted, and hydrofluoric acid, carboxylic acid or the like is used as an etchant, and reactive etching is used. Include those using CFC-based gas.

[0028] For example inorganic material layer, SiO, when the SiO ₂ and 2MgO · SiO ₂ is employed, SiO, SiO ₂ is preferably hydrofluoric acid (hydrofluoric acid), also 2MgO · SiO ₂ is Carboxylic acids are preferred.

Preferably, one or more layers including the uppermost layer of the inorganic material layers (however, at least the lowermost layer is excluded) are used under a reduced pressure (for example, at about 0.4 Pa) and an inert gas such as Ar and O ₂ gas. 2MgO · S formed by a sputtering method in a mixed gas atmosphere (containing about 5% O ₂ ).
Using iO ₂ (forsterite), a carboxylic acid-insoluble inorganic material layer (for example, a SiO ₂ layer) is used as one or more layers including the lowermost layer of the inorganic material layers. The 2MgO.SiO ₂ used as the uppermost layer is soluble in carboxylic acids such as acetic acid, oxalic acid and formic acid.

In a second aspect of the present invention, the object is to provide a method for manufacturing a thin film magnetic head in which at least a magnetic layer, a coil conductor layer, an insulating layer and a protective layer are laminated on a substrate by a thin film forming means. According to a method for manufacturing a thin film magnetic head, including a step of etching the protective layer formed on the external wire connection pad portion formed to be connected to the coil conductor layer with a solution containing COO ⁻ ions. To be achieved.

For removing the protective layer, for example, acetic acid, oxalic acid,
A solution containing COO ⁻ ions such as formic acid is used, and the constituent material of the protective layer is, for example, MgO · SiO ₂ or 2MgO · SiO ₂ (preferably an inert gas (eg Ar) under reduced pressure (eg 0.4 Pa)). And O ₂ mixed gas atmosphere (eg 5%
The degree of O ₂ including) those formed by sputtering _{in), MgO, GeO 2, MgO} -SiO 2 based composition, MgO-SiO ₂ -Al
An inorganic material such as a ₂ O ₃ composition is used.

Preferably, at least one of the magnetic layers (lower and upper magnetic layers) and the coil conductor layer is formed by the metal pattern forming method according to the first aspect of the present invention.

[0033]

From the first viewpoint, the resist layer is already removed at the time of forming the metal layer, and the pattern groove portion made of the inorganic material layer is changed in shape due to heat at the time of forming the metal layer, and lift-off is difficult. Therefore, there is no possibility that the heat when forming the metal layer causes a change in the shape of the metal pattern or the metal pattern cannot be formed.

A preferable example of the metal pattern formed by the above structure is a pattern of a coil conductor layer of a thin film magnetic head, which can also be used as a pattern of a lower magnetic film and an upper magnetic film of the thin film magnetic head. It is also useful for forming a metal conductor pattern of a device.

Second Viewpoint In the case of wet etching in which a solution containing COO ⁻ ions is adopted for removing the protective layer, large-scale equipment such as a vacuum chamber is not required unlike the conventional dry etching, and Carboxylic acid itself is not a harmful substance and its chemical properties are not so strong, so there is no danger unlike conventional wet etching using hydrofluoric acid, so it is necessary to pay close attention to the etching process and the handling of its materials. Nor.

[0036]

【Example】

[First Embodiment] An embodiment of the present invention will be described with reference to FIG. In this description, as a method of forming a metal pattern, a method of forming a conductor layer pattern in a thin film magnetic head or the like will be described as an example, and the description will be added according to the order of steps shown in FIGS.

In FIG. 1A, reference numeral 1 denotes a substrate, on which a first inorganic material layer 2 made of SiO ₂ is formed by sputtering as a film having a thickness of 3 μm, and 2MgO · SiO is formed thereon. _{A second} inorganic material layer 3 of 2 is formed as a 2 μm layer.

Next, a photoresist to be the resist layer 4 is applied on the inorganic material layer (FIG. 1B). As the resist layer 4, either a negative type or a positive type photoresist can be adopted, and an organic material is used. In the case of this embodiment, the coating thickness is about 7 μm.

After the stabilization process in which the resist layer 4 is preheated to about 100.degree. C., a predetermined mask pattern is transferred by exposure, and the wet treatment is performed with an etchant.
Normal patterning is performed (FIG. 2C).

When the patterning of the resist layer 4 is completed, the resist layer 4 is used as a mask pattern and the inorganic material layers 2 and 3 are patterned by an etching process such as ion beam etching. As a result, the pattern groove portion 6 is formed, and the exposed surface 1A is formed on the substrate 1 at the bottom surface of the groove portion 6. At the time of this patterning, reactive etching using a chlorofluorocarbon-based gas or the like can also be adopted, or SiO ₂ which is the first inorganic material layer is hydrofluoric acid,
The second inorganic material layer, 2MgO · SiO _2, is carboxylic acid,
It is also possible to select an appropriate etchant and adopt the wet method.

When the patterning of the second inorganic material layer 3 and the first inorganic material layer 2 is completed ((D) in the figure), the resist layer 4 is removed using an etchant such as acetone,
The surface 3A of the second inorganic material layer 3 made of an inorganic material is exposed ((E) in the figure). The surface 3A of the second inorganic material layer 3
And a conductor layer of Cu or the like is applied to the groove 6 above the exposed surface 1A, which is a part of the substrate surface, by the same thickness as the thickness 3 μm of the first inorganic material layer 2, and the surface 3A of the second inorganic material layer 3 is formed. The conductor layer
51 and 53, and the conductor layer 52 is formed in the groove portion 6 (FIG. 6 (F)). In this case, the conductor layer 5 is formed by sputtering or vapor deposition.

Next, the conductor layers 51 and 53 on the surface 3A of the second inorganic material layer are etched by an ion beam or the like.
In this case, directions a and b inclined by a predetermined angle α with respect to the vertical line n of the substrate surface
The conductor layer 51 is etched by the ion beam irradiated from the. An ion beam incident angle α of about 75 degrees is adopted, and with this angle, the same height as the conductor layer 51 and the first inorganic material layer deposited on the upper surface 3A of the second inorganic material layer 3 of the conductor layer 5 is adopted. Only the conductor layer 53 (the portion shown by the broken line in the figure) formed at the deep position is removed by this ion etching. However, the conductor layer 52 deposited in the groove portion 6 on the exposed surface 1A of the substrate is the conductor layer 51 on the second inorganic material layer and the conductor layer 53 and the second inorganic material after the conductor layer 51 is removed. Shielded from the ion beam by layer 3,
It is left as it is before the final stage and is slightly etched in the final stage to form a flat surface.

When the ion beam etching of the conductor layers 51 and 53 progresses and the surface of the insulating layer 2 is completely or partially exposed as needed (G in the same figure), the ion beam etching is completed, and then the second inorganic layer is formed. The material layer 3 is removed by, for example, a wet method (FIG. 11H). At this time, as the etchant, an etchant capable of selectively removing the second inorganic material layer without affecting or adversely affecting the conductor layer, preferably oxalic acid, acetic acid,
An acid having a COO ⁻ ion (carboxyl ion) such as formic acid is used.

When the second inorganic material layer 3 is removed, the first inorganic material layer 2 and the conductor layer 5 are left as substantially the same thickness and are formed as flat surfaces. Unlike the above, there is no need to newly form another insulating layer between the conductor layers, and a planarization step is not necessary for the next step subsequent to the method for forming a metal pattern of the present invention.

In the present embodiment, the ion beam incident angle α is set to 75 °, but the angle θ of the second inorganic material layer slope is preferably 75 ° or more. That is, it is preferable that the angle θ of the inclined surface and the ion beam incident angle α satisfy the condition of the equation.

[Theta] ≤ [alpha] -Equation According to the above method, since the organic resist material forming the resist layer 4 has already been removed when the conductor layer 5 is sputtered, the resist which has been a problem in the past when the sputtering is performed. There is no fear that the pattern shape of the layer will change or the dissolution characteristics with respect to the etchant will change.

Further, unlike the conventional method, the conductor layer surface is not uneven, and the conductor layer and the inorganic material layer surface are formed flat.

In this embodiment, the case where the number of the inorganic material layers is two has been described, but it goes without saying that the same effect can be obtained when the number of the inorganic material layers is two or more.

[0049]

[Second Embodiment] Removal of a protective layer in a method of manufacturing a thin film magnetic head according to an embodiment of the present invention will be described with reference to FIG.
Will be described. The figure shows (a) to (c) respectively sectional views of the thin film magnetic head manufacturing method of this embodiment before forming the protective layer, after forming the protective layer, and after removing the protective layer on the pad portion, These are the thin film magnetic head 10 shown in FIG.
2 is also a view of the electromagnetic conversion element section of FIG.

In FIG. 1A, the lower magnetic layer 2 is first formed on the substrate 1 by sputtering or the like, and then the insulating layer 3, the coil conductor layer 4 and the insulating layer 5, the gap layer 8 and the upper magnetic layer 6 are formed. , Is sequentially formed as a thin film on the lower magnetic layer 2, and is patterned according to a predetermined shape.

The coil conductor layer 4 includes a coil portion conductor layer 4a,
A pad portion 4b which is formed at the same time as the coil portion conductor layer 4a and is connected to each other and configured as an external lead wire connecting terminal, and the pad portion 4b is connected to an external wiring after the completion of the thin film magnetic head, It is used as an external terminal for transmitting the signal voltage generated in the conductor layer 4a to the outside.

The insulating layer 5 is patterned according to a predetermined shape by an ion beam or the like for forming a magnetic gap layer immediately after it is formed as a layer by vacuum vapor deposition or sputtering. During this patterning, the pad portion is formed. The insulating layer 5 formed on the upper portion 4b is also removed at the same time.

Next, the protective layer 11 is formed so as to cover the entire electromagnetic conversion element portion of the thin film magnetic head 10. The protective layer 11 is made of an inorganic material that easily dissolves in a solution containing COO ⁻ ions, such as 2MgO · Si.
It is made of O ₂ and has a thickness of, for example, 45 μm, which is extremely thick in comparison with other laminated portions due to requirements such as mechanical strength. This insulating layer is formed by, for example, sputtering. (Figure (b)).

Next, a photoresist layer (not shown) is applied to the surface of the protective film 11, and patterning is performed by a known method such as exposure and development, so that only the photoresist layer applied on and around the pad portion 4b is removed. The pad portion 4b is removed corresponding to the shape thereof. By using this photoresist layer as a mask, only the protective layer 11 on the pad portion 4b is removed by an oxalic acid solution which is a kind of solution containing COO ⁻ ions, and the protective layer 11 on the pad portion 4b is connected to an external lead wire. Form a window. After that, the photoresist layer applied and left on other portions is removed by a known method (see FIG.
(c)). After this, a wiring to be an external lead wire is bonded to the pad portion 4b.

In the case of the method of manufacturing the thin film magnetic head according to the present embodiment, 2MgO.
Although an example using SiO ₂ is shown, other materials for the protective layer include, for example, MgO / SiO _{2 and} other MgO-SiO ₂ composition, MgO.
-SiO ₂ -Al ₂ O ₃ -based composition, MgO, GeO _{2 and the} like can also be used, and other materials that can be dissolved in a solution containing COO ⁻ ions can be used.

As the solution containing COO ⁻ ions, acetic acid, oxalic acid, formic acid, etc. can be used, and all of them have safer and more chemical properties than hydrofluoric acid which is an inorganic acid conventionally used for removing the protective layer. It is not so strong and requires less care than hydrofluoric acid during the etching process and handling of the material.

[0057]

According to the first aspect of the present invention, unlike the conventional method of forming a metal pattern, there is no instability of lift-off due to the use of a photoresist which is an organic material, and no change in the shape of the pattern. It is possible to provide a method for forming a metal pattern on a substrate, which enables patterning without lift-off and shape change and thus enables fine pattern formation by a smooth process.

Further, according to the invention of the first aspect, the unevenness of the conductor layer that is finally left can be flattened in the same step, and there is no fear of generating irregularities on the surface of the metal layer.
Therefore, the next step following the metal pattern forming method of the present invention is facilitated.

In the structure of the method for manufacturing a thin film magnetic head according to the second aspect of the present invention, the step of removing the protective layer formed on the pad portion of the conductor layer by wet etching using a solution containing COO ⁻ ions is performed. By adopting,
Unlike dry etching such as ion beam, which requires large-scale equipment such as a vacuum tank, it does not require large-scale equipment, so the manufacturing cost of the thin-film magnetic head can be reduced, and hydrofluoric acid is used as an etching material. Compared with the wet etching adopted, the solution containing COO ⁻ ions is not so strong in chemical nature and poses less danger to the operator, so the process and materials are easy to handle, and therefore the manufacturing cost can be reduced. Thus, it is possible to provide a method for manufacturing a thin film magnetic head in which the etching operation itself is easy.

[Brief description of drawings]

1A to 1H are cross-sectional views of respective layers showing the state of each layer sequentially in each step according to a method for forming a metal pattern on a substrate according to an embodiment of the first aspect of the present invention. Is.

FIG. 2 is a view similar to FIG. 1 according to a conventional method of forming a metal pattern for a first aspect.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Insulating layer 3 ... First resist layer 4 ... Second resist layer 5 ... Conductor layer 6 ... Groove 1A ... Exposed surface 3A ... First resist layer surface

FIG. 3 is an electromagnetic conversion element part which is a main part of a thin film magnetic head for showing a state of removing a protective layer on a pad part which is an embodiment of a method of manufacturing a thin film magnetic head according to a second aspect of the present invention. In the cross-sectional view of (a) before the protective layer formation, (b) after the protective layer formation,
(c) is a figure which respectively shows after removing a protective layer on a pad part.

FIG. 4 is a schematic plan view of an electromagnetic conversion element portion showing a structure of a conventional thin film magnetic head and a thin film magnetic head according to a second aspect of the present invention without a protective layer.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Lower magnetic film 3 ... Insulating layer 4 ... Coil conductor layer 4a ... Coil part 4b ... Pad part 5 ... Insulating layer 6 ... Upper magnetic film 10 ... Thin film magnetic head 11 ... Protective layer

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[Procedure amendment]

[Submission date] January 13, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

[1] (A) ~ (E) is first according to the method of forming a metal pattern on a substrate according to one embodiment of the viewpoint, each cross-sectional view showing a state of sequentially layers for each step of the present invention Is.

2 (F) to (H) are one implementation of the first aspect of the present invention.
According to the method of forming a metal pattern on a substrate according to an example
FIG. 3 is a cross-sectional view of each layer showing the state of each layer in sequence for each step.
It

FIG. 3 Forming a conventional metal pattern relating to the first aspect
2 is a view similar to FIG. 1 according to the method of FIG.

[Explanation of symbols] 1 ... Substrate 2 ... Insulation layer 3 ... First resist layer 4 ... Second resist layer 5 ... Conductor layer 6 ... Groove 1A ... exposed surface 3A ... First resist layer surface

FIG. 4 is a method of manufacturing a thin film magnetic head according to a second aspect of the present invention .
How to remove the protective layer on the pad part, which is one example of the method
An electromagnetic conversion element part which is a main part of a thin film magnetic head for showing
2A is a cross-sectional view of (a) before forming a protective layer, (b) is a protective layer type
After formation, (c) is a diagram showing respectively after removing the protective layer on the pad portion.
Is.

FIG. 5 is a schematic plan view of an electromagnetic conversion element section showing a structure of a conventional thin film magnetic head and a thin film magnetic head of the present invention from a second viewpoint, with a protective layer removed.

[Explanation of symbols] 1 ... Substrate 2 ... Lower magnetic film 3 ... Insulating layer 4 ... Coil conductor layer 4a ... Coil part 4b ... Pad section 5 ... Insulating layer 6 ... Upper magnetic film 10 ... Thin film magnetic head 11 ... Protective layer

[Procedure Amendment 2]

[Document name to be corrected] Drawing

[Correction target item name] All drawings

[Correction method] Change

[Correction content]

[Figure 1]

[Fig. 2]

[Figure 5]

[Figure 3]

[Figure 4]

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Claims (13)

[Claims] 1. A step (a) of sequentially laminating at least two or more inorganic material layers on a substrate, a step (b) of forming a resist pattern on the inorganic material layer, and a step of forming the resist pattern on the inorganic material layer. A step (c) of selectively removing the resist pattern using a mask to form a pattern groove, a step (d) of removing the resist pattern, and a metal layer covering the surface of the uppermost layer of the inorganic material layer and the pattern groove. Step (e), leaving at least a part of the metal layer of the pattern groove portion, and covering the surface of the uppermost layer of the inorganic material layer with a metal layer until at least a part of the uppermost layer of the inorganic material layer appears. A method of forming a metal pattern on a substrate, comprising: (f) removing, and (g) removing one or more inorganic material layers including at least the uppermost layer of the inorganic material layers. .. 2. The method according to claim 1, wherein in the step (g), a layer including at least the lowermost layer of the inorganic material layers is left. 3. The step (c) is performed by using different etching media having different etching characteristics with respect to a layer including at least the lowermost layer and a layer including at least the uppermost layer among the inorganic material layers. The method of claim 1, wherein 4. The method according to claim 3, wherein the etching medium is an etching solution having a selective solubility with respect to the layer including at least the lowermost layer or the layer including at least the uppermost layer. 5. The step (a) is performed by forming a layer containing at least the lowermost layer insoluble in the carboxylic acid solution and a layer containing at least the uppermost layer soluble in the carboxylic acid solution, and the step (c) above. In, using a carboxylic acid solution for the selective etching of a layer including at least the uppermost layer of the inorganic material layer, an etching solution for selectively etching the layer including at least the lowermost layer, the layer including at least the lowermost layer The method according to claim 4, wherein the method is used for etching. 6. The method according to claim 3, wherein the layer including at least the uppermost layer of the inorganic material layers is a 2MgO.SiO ₂ layer. 7. The method according to claim 3, wherein a layer including at least the lowermost layer of the inorganic material layers is a SiO ₂ layer. 8. The method according to claim 6, wherein the 2MgO.SiO ₂ layer is formed by sputtering in a mixed gas of Ar and O ₂ . 9. The step (f) is performed with respect to the substrate normal.
The method according to claim 1, which is performed by ion beam etching in which the ion beam is irradiated at an ion incident angle of 5 ° or more. 10. The layer including at least the uppermost layer of the inorganic material layers after the step (c) is the step (f).
10. The method according to claim 9, wherein the method has a slope less than or equal to the ion incident angle of. 11. A method of manufacturing a thin film magnetic head in which at least a magnetic layer, a coil conductor layer, an insulating layer and a protective layer are laminated on a substrate by a thin film forming means, and the thin film magnetic head is formed so as to be connected to the coil conductor layer. A method of manufacturing a thin film magnetic head, comprising the step of etching the protective layer formed on the line connection pad portion with a solution containing COO ⁻ ions. 12. The protective layer is composed of an inorganic material soluble in a solution containing COO ⁻ ions.
1. The method for manufacturing the thin film magnetic head described in 1. 13. The method according to claim 1, wherein at least one layer of the magnetic layer and the coil conductor layer is formed by the method of forming a metal pattern according to claim 1.
2. The method for manufacturing a thin film magnetic head as described in 2.