JPH05259529A - Insulating substrate and manufacturing method thereof - Google Patents

Insulating substrate and manufacturing method thereof

Info

Publication number
JPH05259529A
JPH05259529A JP4086650A JP8665092A JPH05259529A JP H05259529 A JPH05259529 A JP H05259529A JP 4086650 A JP4086650 A JP 4086650A JP 8665092 A JP8665092 A JP 8665092A JP H05259529 A JPH05259529 A JP H05259529A
Authority
JP
Japan
Prior art keywords
insulating substrate
metal powder
powder
electrode
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4086650A
Other languages
Japanese (ja)
Inventor
Masao Takemura
政夫 竹村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nidec Sankyo Corp
Original Assignee
Nidec Sankyo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nidec Sankyo Corp filed Critical Nidec Sankyo Corp
Priority to JP4086650A priority Critical patent/JPH05259529A/en
Publication of JPH05259529A publication Critical patent/JPH05259529A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H05K3/4061Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To provide the title insulating substrate forming through electrodes completely stopping up through holes without entailing cost up as well as the manufacturing method thereof. CONSTITUTION:Through electrodes 3 are formed by filling up through holes 2 with the first metallic powder 3A in the particle diameter of 10-90% of the diameter of the through holes 2 e.g. exceeding one particle, the second metallic powder 3B in the particle diameter smaller than that of the first metallic powder 3A e.g. multiple particles as well as glass powder 3C to be sintered later. In such a constitution, a conductive paste blended with a solvent, resin, etc., is not to be used for the metallic powder different from any conventional metallic powder so that the contraction of the metallic powder may be restrained during the sintering step and thereby the through electrodes 3 completely stopping up the through holes enabled to be formed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ブラシレスモータのロ
ータ磁極位置等の磁気を検出するために用いられるホー
ル素子等を形成する絶縁基板及びその製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulating substrate for forming a Hall element or the like used for detecting magnetism such as a rotor magnetic pole position of a brushless motor, and a method of manufacturing the same.

【0002】[0002]

【従来の技術】この種のホール素子等をブラシレスモー
タに用いる場合、ブラシレスモータの軸方向を短小とし
た扁平化の要求に応じるため、ホール素子自体を扁平化
することが行なわれている。図7はこのように扁平化を
図ったホール素子を形成する絶縁基板を示すものであ
る。図7において、11はセラミックやガラス等からな
る方形状の絶縁基板で、この絶縁基板11の四隅の近傍
には表裏方向に貫通する透孔12が設けられている。こ
の透孔12内には導電性の貫通電極13が設けられて、
この上下の端面は絶縁基板11の表裏面と同一となるよ
うに露出されている。
2. Description of the Related Art When this type of Hall element is used in a brushless motor, the Hall element itself is flattened in order to meet the demand for flattening the brushless motor in a short axial direction. FIG. 7 shows an insulating substrate for forming such a flattened Hall element. In FIG. 7, reference numeral 11 denotes a rectangular insulating substrate made of ceramic, glass, or the like, and through holes 12 penetrating in the front-back direction are provided near the four corners of the insulating substrate 11. A conductive through electrode 13 is provided in the through hole 12,
The upper and lower end surfaces are exposed so as to be the same as the front and back surfaces of the insulating substrate 11.

【0003】絶縁基板11の表面にはインジュームアン
チモン等のホール効果を有する薄膜状の感磁膜14が形
成され、さらに感磁膜14と貫通電極13とを接続する
導電膜15が形成され、これら感磁膜14と導電膜15
を被覆する保護膜16が形成されている。一方、絶縁基
板11の裏面に露出した貫通電極13の端面には電極部
17が形成され、さらにこの電極部17の表面には、図
示しない外部の配線基板のパターン等に接続するための
半田バンプ18が形成されている。また保護膜16を含
む絶縁基板11の表面側にはエポキシ樹脂等からなる保
護被覆部19が設けられている。
On the surface of the insulating substrate 11, a thin magnetic film 14 having a Hall effect such as indium antimony is formed, and a conductive film 15 connecting the magnetic film 14 and the through electrode 13 is formed. These magnetic sensitive film 14 and conductive film 15
A protective film 16 is formed to cover the. On the other hand, an electrode portion 17 is formed on the end surface of the through electrode 13 exposed on the back surface of the insulating substrate 11, and on the surface of the electrode portion 17, solder bumps for connecting to a pattern or the like of an external wiring board not shown. 18 is formed. A protective coating portion 19 made of epoxy resin or the like is provided on the surface side of the insulating substrate 11 including the protective film 16.

【0004】このようなホール素子を形成する絶縁基板
11において、大きなホール電圧を出力させるためには
感磁膜14と電極部17との間の電気的抵抗をできるだ
け小さくすることが必要であり、このために貫通電極1
3は透孔12を完全に塞ぐように形成される。ここで貫
通電極13の形成は、金属粉末に溶剤や樹脂やガラス粉
末等を混合した導電ペーストを用いて透孔13内に充填
した後、絶縁基板11を加熱して金属粉末を焼結させる
ことが行なわれる。
In the insulating substrate 11 forming such a Hall element, in order to output a large Hall voltage, it is necessary to minimize the electric resistance between the magneto-sensitive film 14 and the electrode section 17. For this purpose, the through electrode 1
3 is formed so as to completely close the through hole 12. Here, the through electrode 13 is formed by filling the inside of the through hole 13 with a conductive paste prepared by mixing a metal powder with a solvent, resin, glass powder or the like, and then heating the insulating substrate 11 to sinter the metal powder. Is performed.

【0005】[0005]

【発明が解決しようとする課題】ところで従来の絶縁基
板では、透孔内に充填した導電ペーストが焼結処理時に
体積が収縮するので、透孔を完全に塞ぐように貫通電極
を形成するのが不可能であるという問題がある。
By the way, in the conventional insulating substrate, since the volume of the conductive paste filled in the through holes shrinks during the sintering process, it is preferable to form the through electrodes so as to completely close the through holes. The problem is that it is impossible.

【0006】これは、用いられている金属粉末が一般に
1μm以下の微粒径であるため焼結処理時に収縮が進む
ようになるからである。このような欠点を除くには導電
ペーストを数回透孔内に充填して焼結処理を繰り返さね
ばならず、コストアップが避けられなくなる。
This is because the metal powder used generally has a fine particle size of 1 .mu.m or less, so that shrinkage proceeds during the sintering process. In order to eliminate such a defect, it is necessary to fill the through holes with the conductive paste several times and repeat the sintering process, which inevitably leads to an increase in cost.

【0007】本発明は以上のような問題に対処してなさ
れたもので、コストアップを伴うことなく透孔を完全に
塞ぐように貫通電極を形成する絶縁基板およびその製造
方法を提供することを目的とするものである。
The present invention has been made in consideration of the above problems, and provides an insulating substrate in which a through electrode is formed so as to completely close a through hole without increasing the cost, and a manufacturing method thereof. It is intended.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明の絶縁基板は、表裏方向に貫通する透孔内に
導電性の貫通電極を有し、この貫通電極が金属粉末焼結
体で形成された絶縁基板において、上記貫通電極が上記
透孔の径の10乃至90%の粒径を持つ第1の金属粉末
とこの第1の金属粉末よりも粒径の小さい第2の金属粉
末とガラス粉末とから形成されたことを特徴とするもの
である。
In order to achieve the above object, the insulating substrate of the present invention has a conductive through electrode in a through hole penetrating in the front and back direction, and the through electrode is a metal powder sintered body. In an insulating substrate formed of a body, the through electrode has a first metal powder having a particle diameter of 10 to 90% of the diameter of the through hole, and a second metal having a particle diameter smaller than the first metal powder. It is characterized by being formed from powder and glass powder.

【0009】また、本発明の絶縁基板は、少なくとも1
粒以上の第1の金属粉末と複数粒の第2の金属粉末とガ
ラス粉末とから形成されたことを特徴とするものであ
る。
The insulating substrate of the present invention has at least 1
It is characterized in that it is formed from a first metal powder having a grain size or more, a second metal powder having a plurality of grains, and a glass powder.

【0010】さらに、本発明の絶縁基板の製造方法は、
(a)絶縁基板の透孔の径の10乃至90%の粒径を持
つ少なくとも1粒以上の第1の金属粉末とこの第1の金
属粉末よりも粒径の小さい複数粒の第2の金属粉末と第
1の金属粉末よりも粒径の小さい複数粒のガラス粉末と
を上記透孔内に充填する工程と、(b)上記絶縁基板を
加熱して上記第1の金属粉末と上記第2の金属粉末と上
記ガラス粉末とを焼結する工程と、(c)上記絶縁基板
の表裏面を平面研磨する工程と、を少なくとも有するこ
とを特徴とするものである。
Further, the method of manufacturing an insulating substrate of the present invention is
(A) At least one or more first metal powders having a grain size of 10 to 90% of the diameter of the through holes of the insulating substrate and a plurality of second metal grains having a grain size smaller than that of the first metal powders A powder and a plurality of glass powders having a particle size smaller than that of the first metal powder in the through hole; and (b) heating the insulating substrate to form the first metal powder and the second metal powder. At least the step of sintering the metal powder and the glass powder described above and (c) the step of planarly polishing the front and back surfaces of the insulating substrate.

【0011】[0011]

【作用】本発明の絶縁基板によれば、貫通電極は透孔の
径の10乃至90%の粒径を持つ例えば1粒以上の第1
の金属粉末と、この第1の金属粉末よりも粒径の小さい
例えば複数粒の第2の金属粉末とガラス粉末とから形成
され、導電ペーストと異なって大きな金属粉末によって
形成されているので、焼結処理時に体積の収縮が抑えら
れる。従って透孔を完全に塞ぐことができる。
According to the insulating substrate of the present invention, the through electrode has, for example, one or more first particles having a particle diameter of 10 to 90% of the diameter of the through hole.
Of the second metal powder and a glass powder having a smaller particle size than the first metal powder and a plurality of second metal powders and a glass powder. Shrinkage of volume is suppressed during binding treatment. Therefore, the through hole can be completely closed.

【0012】本発明の絶縁基板の製造方法によれば、透
孔内に上記第1の金属粉末と第2の金属粉末とガラス粉
末とを充填後焼結し、平面研磨を行なうので、第1の金
属粉末と第2の金属粉末とガラス粉末とを混合して溶融
することにより、透孔内を完全に塞ぐような貫通電極を
形成することができ、さらに貫通電極の上下の端面を絶
縁基板の表裏面と同一にすることができる。
According to the method for manufacturing an insulating substrate of the present invention, the first metal powder, the second metal powder, and the glass powder are filled in the through holes and then sintered and flattened. By mixing and melting the above metal powder, the second metal powder, and the glass powder, it is possible to form a through electrode that completely closes the inside of the through hole, and the upper and lower end surfaces of the through electrode can be insulated from each other. It can be the same as the front and back surfaces of.

【0013】[0013]

【実施例】以下図面を参照して本発明の実施例を説明す
る。図1及び図2は本発明の絶縁基板の実施例を示す断
面図及び斜視図である。1はセラミックやガラス等から
なる方形状の絶縁基板、2はこの絶縁基板1の四隅の近
傍に表裏方向に貫通するように設けられた透孔、3は透
孔2内に設けられた貫通電極でこの貫通電極3の端面は
絶縁基板1の表裏面と同一となるように露出されてい
る。
Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are a sectional view and a perspective view showing an embodiment of an insulating substrate of the present invention. Reference numeral 1 is a rectangular insulating substrate made of ceramic or glass, 2 is a through hole provided in the vicinity of four corners of the insulating substrate 1 so as to penetrate in the front and back directions, and 3 is a through electrode provided in the through hole 2. The end faces of the through electrode 3 are exposed so as to be the same as the front and back faces of the insulating substrate 1.

【0014】ここで、貫通電極3は、上記透孔2の径の
10乃至90%の粒径を持つ例えば1粒以上の第1の金
属粉末3Aと、この第1の金属粉末3Aよりも粒径の小
さい例えば複数粒の第2の金属粉末と第1の金属粉末よ
りも粒径の小さいガラス粉末とが焼結されて形成されて
いる。これら金属粉末としては、金、銀、銅、銀−パラ
ジューム合金等、あるいは銅に銀メッキした導電性材料
が用いられる。
Here, the through electrode 3 has, for example, one or more first metal powders 3A having a particle size of 10 to 90% of the diameter of the through hole 2 and particles more than the first metal powder 3A. For example, a plurality of second metal powders having a small diameter and a glass powder having a smaller particle diameter than the first metal powder are sintered and formed. As the metal powder, gold, silver, copper, silver-palladium alloy, or the like, or a conductive material obtained by plating copper with silver is used.

【0015】4は絶縁基板1の表面に形成されたインジ
ュームアンチモン等のホール効果を有する薄膜状の感磁
膜、5は感磁膜4と貫通電極3とを接続する導電膜、6
はこれら感磁膜4と導電膜5を被覆する保護膜である。
7は絶縁基板1の裏面に露出した貫通電極3の端面に形
成された電極部、8は電極部7の表面に形成され、図示
しない外部の配線基板のパターン等に接続するための半
田バンプ、9は保護膜5を含む絶縁基板1の表面側に設
けられたエポキシ樹脂等からなる保護被覆部である。こ
の保護被覆部9は絶縁基板1に形成するホール素子の信
頼性を高めるために設けられ、耐湿性を向上すると同時
に機械的強度を上げるようにしている。
Reference numeral 4 is a thin film-shaped magnetosensitive film having a Hall effect, such as indium antimony, formed on the surface of the insulating substrate 1, and 5 is a conductive film for connecting the magnetosensitive film 4 and the through electrode 3.
Is a protective film that covers the magnetic sensitive film 4 and the conductive film 5.
Reference numeral 7 denotes an electrode portion formed on the end surface of the through electrode 3 exposed on the back surface of the insulating substrate 1, reference numeral 8 denotes a solder bump formed on the surface of the electrode portion 7 for connecting to a pattern or the like of an external wiring substrate (not shown), Reference numeral 9 denotes a protective coating portion made of epoxy resin or the like provided on the front surface side of the insulating substrate 1 including the protective film 5. The protective coating portion 9 is provided to enhance the reliability of the Hall element formed on the insulating substrate 1, and improves the moisture resistance and at the same time the mechanical strength.

【0016】次にこのような絶縁基板1を製造する本発
明の絶縁基板の製造方法を工程順に説明する。まず、図
3に示したように、予めその四隅に透孔2を設けたセラ
ミックやガラス等からなる方形状の絶縁基板1を用意す
る。次に、図4に示したように、透孔2内にこの透孔2
の径の10乃至90%の粒径を持つ例えば1粒以上の第
1の金属粉末3Aと、この第1の金属粉末3Aよりも粒
径の小さい例えば複数粒の第2の金属粉末3Bと第1の
金属粉末3Aよりも粒径の小さいガラス粉末3Cとを充
填する。これら金属粉末の充填方法は、初めに粒径の大
きな第1の金属粉末3Aを充填した後に粒径の小さい第
2の金属粉末3Bと粒径の小さいガラス粉末3Cとを充
填する方法、あるいは予め混合した第1及び第2の金属
粉末とガラス粉末を充填する方法等をとることができ
る。一例として、混合粉末を絶縁基板1の表面に拡げて
ゴムローラ等で加圧して透孔2内に充填すると、良く詰
まった状態で金属粉末を充填することができる。この場
合余った金属粉末とガラス粉末はヘラ等で取去するよう
にする。
Next, a method of manufacturing an insulating substrate according to the present invention for manufacturing such an insulating substrate 1 will be described step by step. First, as shown in FIG. 3, a rectangular insulating substrate 1 made of ceramic, glass or the like having through holes 2 provided at its four corners in advance is prepared. Next, as shown in FIG.
The first metal powder 3A having a particle size of 10 to 90% of the diameter of the first metal powder 3A, and the second metal powder 3B having a particle size smaller than the first metal powder 3A, such as a plurality of particles. 1 glass powder 3C having a smaller particle size than the metal powder 3A. These metal powders can be filled by first filling the first metal powder 3A having a large particle size and then filling the second metal powder 3B having a small particle size and the glass powder 3C having a small particle size, or in advance. A method of filling the mixed first and second metal powders and glass powder can be used. As an example, when the mixed powder is spread on the surface of the insulating substrate 1 and pressed by a rubber roller or the like to fill the inside of the through hole 2, the metal powder can be filled in a well-filled state. In this case, the excess metal powder and glass powder should be removed with a spatula or the like.

【0017】次に、図5に示したように、絶縁基板1を
加熱することにより第1及び第2の金属粉末3A,3B
とガラス粉末3Cとを溶融結合させて焼結する。この場
合加熱処理の雰囲気を金属粉末の種類によって変えるよ
うにする。例えば銅の金属粉末を用いた場合は、不活性
雰囲気中で800℃で2時間加熱処理を行なう。
Next, as shown in FIG. 5, the insulating substrate 1 is heated to heat the first and second metal powders 3A and 3B.
And glass powder 3C are melt-bonded and sintered. In this case, the atmosphere of heat treatment is changed depending on the type of metal powder. For example, when copper metal powder is used, heat treatment is performed at 800 ° C. for 2 hours in an inert atmosphere.

【0018】続いて、図6に示したように、図5のL部
に沿って絶縁基板1の表裏面を平面研磨することによ
り、絶縁基板1の表裏面と上下の端面を同一にした貫通
電極3を形成する。次に、この貫通電極3とオーミック
コンタクトする導電膜5を絶縁基板1の表面に形成した
後、この導電膜5間に感磁膜4を形成する。次に感磁膜
4と導電膜5を保護するために酸化膜等からなる保護膜
6を形成した後、さらにエポキシ樹脂等からなる保護被
覆部9を形成する。
Subsequently, as shown in FIG. 6, the front and back surfaces of the insulating substrate 1 are planar-polished along the portion L of FIG. The electrode 3 is formed. Next, after forming the conductive film 5 which makes ohmic contact with the through electrode 3 on the surface of the insulating substrate 1, the magneto-sensitive film 4 is formed between the conductive films 5. Next, a protective film 6 made of an oxide film or the like is formed to protect the magnetic sensitive film 4 and the conductive film 5, and then a protective coating portion 9 made of an epoxy resin or the like is further formed.

【0019】一方、絶縁基板1の裏面に貫通電極3とオ
ーミックコンタクトする電極部7を形成した後、この電
極部7の表面に半田リフローによって半田バンプ8を形
成する。以上の各工程によって図1の絶縁基板1が製造
される。
On the other hand, after forming the electrode portion 7 which makes ohmic contact with the through electrode 3 on the back surface of the insulating substrate 1, the solder bump 8 is formed on the surface of the electrode portion 7 by solder reflow. The insulating substrate 1 of FIG. 1 is manufactured by the above steps.

【0020】このような本実施例の絶縁基板1によれ
ば、透孔2内に形成される貫通電極3は、透孔2の径の
10乃至90%の粒径を持つ例えば1粒以上の第1の金
属粉末3Aと、この第1の金属粉末3Aよりも粒径の小
さい例えば複数粒の第2の金属粉末3Bと複数粒のガラ
ス粉末3Cとが焼結されて形成されており、従来のよう
に1μm以下の微粉末金属を混合した導電ペーストは用
いないので、焼結処理時に体積の収縮が抑えられる。従
って透孔2を完全に塞ぐ貫通電極3を得ることができ
る。
According to the insulating substrate 1 of this embodiment, the through electrode 3 formed in the through hole 2 has a particle size of 10 to 90% of the diameter of the through hole 2, for example, one or more particles. The first metal powder 3A is formed by sintering a second metal powder 3B having a grain size smaller than that of the first metal powder 3A, for example, a plurality of grains of the second metal powder 3B, and a plurality of grains of the glass powder 3C. Since the conductive paste in which the fine powder metal of 1 μm or less is mixed is not used as described above, the shrinkage of the volume can be suppressed during the sintering process. Therefore, the through electrode 3 that completely closes the through hole 2 can be obtained.

【0021】また、本発明の絶縁基板の製造方法によれ
ば、透孔2内に上記第1の金属粉末3Aと第2の金属粉
末3Bとガラス粉末3Cを充填後焼結し、平面研磨を行
なうようにしたので、焼結処理を繰り返すことなく、透
孔2を完全に塞ぐ貫通電極3を形成することができる。
従って1度の焼結処理によって目的の貫通電極3を形成
できるので、コストアップを防止することができる。
Further, according to the method for manufacturing an insulating substrate of the present invention, the first metal powder 3A, the second metal powder 3B and the glass powder 3C are filled in the through hole 2 and then sintered and flattened. Since this is performed, the through electrode 3 that completely closes the through hole 2 can be formed without repeating the sintering process.
Therefore, the target through electrode 3 can be formed by one-time sintering treatment, so that an increase in cost can be prevented.

【0022】さらに、粒径の大きな第1の金属粉末3A
を粒径の小さい第2の金属粉末3Bと粒径の小さいガラ
ス粉末3Cと混合して充填するため、焼結処理時の体積
の収縮をより小さく抑えることができる。また、微粒化
した金属粉末を用いると元の金属の融点よりも低い温度
で溶融させることができるので、低温焼結で各金属粉末
を完全に溶融接続することができる。
Furthermore, the first metal powder 3A having a large particle size
Is mixed and filled with the second metal powder 3B having a small particle diameter and the glass powder 3C having a small particle diameter, so that the volume shrinkage during the sintering process can be further suppressed. Further, when the atomized metal powder is used, the metal powder can be melted at a temperature lower than the melting point of the original metal, so that the metal powders can be completely melted and connected by low temperature sintering.

【0023】[0023]

【発明の効果】以上述べたように本発明によれば、粒径
の大きな第1の金属粉末と粒径の小さい第2の金属粉末
とガラス粉末とを絶縁基板の透孔内に充填し焼結して貫
通電極を形成するようにしたので、コストアップを伴う
ことなく透孔を完全に塞いだ貫通電極を有する絶縁基板
及びその製造方法を提供することができる。
As described above, according to the present invention, the first metal powder having a large particle diameter, the second metal powder having a small particle diameter, and the glass powder are filled in the through holes of the insulating substrate and baked. Since the through electrodes are connected to each other to form the through electrodes, it is possible to provide the insulating substrate having the through electrodes in which the through holes are completely closed and the manufacturing method thereof, without increasing the cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の絶縁基板の実施例を示す断面図であ
る。
FIG. 1 is a sectional view showing an embodiment of an insulating substrate of the present invention.

【図2】本発明の絶縁基板の実施例を示す斜視図であ
る。
FIG. 2 is a perspective view showing an embodiment of an insulating substrate of the present invention.

【図3】本発明の絶縁基板の製造方法の一工程を示す断
面図である。
FIG. 3 is a cross-sectional view showing a step in the method for producing an insulating substrate of the present invention.

【図4】本発明の絶縁基板の製造方法の他工程を示す断
面図である。
FIG. 4 is a cross-sectional view showing another step of the method for manufacturing an insulating substrate of the present invention.

【図5】本発明の絶縁基板の製造方法の他工程を示す断
面図である。
FIG. 5 is a cross-sectional view showing another step of the method for manufacturing an insulating substrate of the present invention.

【図6】本発明の絶縁基板の製造方法の他工程を示す断
面図である。
FIG. 6 is a cross-sectional view showing another step of the method for manufacturing an insulating substrate of the present invention.

【図7】従来の絶縁基板を示す断面図である。FIG. 7 is a cross-sectional view showing a conventional insulating substrate.

【符号の説明】[Explanation of symbols]

1 絶縁基板 2 透孔 3 貫通電極 3A 第1の金属粉末 3B 第2の金属粉末 3C ガラス粉末 4 感磁膜 5 導電膜 6 保護膜 7 電極部 8 半田バンプ 9 保護被覆部 1 Insulating Substrate 2 Through Hole 3 Through Electrode 3A First Metal Powder 3B Second Metal Powder 3C Glass Powder 4 Magnetic Sensitive Film 5 Conductive Film 6 Protective Film 7 Electrode Part 8 Solder Bump 9 Protective Cover Part

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 表裏方向に貫通する透孔内に導電性の貫
通電極を有し、この貫通電極が金属粉末焼結体で形成さ
れた絶縁基板において、上記貫通電極が上記透孔の径の
10乃至90%の粒径を持つ第1の金属粉末とこの第1
の金属粉末よりも粒径の小さい第2の金属粉末とガラス
粉末とから形成されたことを特徴とする絶縁基板。
1. An insulating substrate having a conductive through electrode in a through hole penetrating in the front-back direction, the through electrode being formed of a metal powder sintered body, wherein the through electrode has a diameter of the through hole. A first metal powder having a particle size of 10 to 90% and this first
An insulating substrate formed from a second metal powder having a particle diameter smaller than that of the above metal powder and a glass powder.
【請求項2】 少なくとも1粒以上の第1の金属粉末と
複数粒の第2の金属粉末とガラス粉末とから形成された
ことを特徴とする請求項1記載の絶縁基板。
2. The insulating substrate according to claim 1, wherein the insulating substrate is formed from at least one or more particles of the first metal powder, a plurality of particles of the second metal powder, and a glass powder.
【請求項3】 (a)絶縁基板の透孔の径の10乃至9
0%の粒径を持つ少なくとも1粒以上の第1の金属粉末
とこの第1の金属粉末よりも粒径の小さい複数粒の第2
の金属粉末と第1の金属粉末よりも粒径の小さい複数粒
のガラス粉末とを上記透孔内に充填する工程と、(b)
上記絶縁基板を加熱して上記第1の金属粉末と上記第2
の金属粉末と上記ガラス粉末とを焼結する工程と、
(c)上記絶縁基板の表裏面を平面研磨する工程と、を
少なくとも有することを特徴とする絶縁基板の製造方
法。
3. (a) The diameter of the through hole of the insulating substrate is 10 to 9
At least one or more first metal powders having a particle size of 0% and a plurality of second powders having a particle size smaller than that of the first metal powders.
And (b) filling the through hole with the metal powder of No. 1 and a plurality of glass powders having a particle size smaller than that of the first metal powder,
The insulating substrate is heated to heat the first metal powder and the second metal powder.
A step of sintering the metal powder and the glass powder,
(C) A step of polishing the front and back surfaces of the insulating substrate by plane polishing, at least.
JP4086650A 1992-03-11 1992-03-11 Insulating substrate and manufacturing method thereof Withdrawn JPH05259529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4086650A JPH05259529A (en) 1992-03-11 1992-03-11 Insulating substrate and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4086650A JPH05259529A (en) 1992-03-11 1992-03-11 Insulating substrate and manufacturing method thereof

Publications (1)

Publication Number Publication Date
JPH05259529A true JPH05259529A (en) 1993-10-08

Family

ID=13892914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4086650A Withdrawn JPH05259529A (en) 1992-03-11 1992-03-11 Insulating substrate and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH05259529A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2720520A4 (en) * 2011-06-08 2015-05-27 Kyocera Corp Circuit board and electronic device provided with same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2720520A4 (en) * 2011-06-08 2015-05-27 Kyocera Corp Circuit board and electronic device provided with same
US9820379B2 (en) 2011-06-08 2017-11-14 Kyocera Corporation Circuit board and electronic device including same

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