JPH0525536B2 - - Google Patents

Info

Publication number
JPH0525536B2
JPH0525536B2 JP61061395A JP6139586A JPH0525536B2 JP H0525536 B2 JPH0525536 B2 JP H0525536B2 JP 61061395 A JP61061395 A JP 61061395A JP 6139586 A JP6139586 A JP 6139586A JP H0525536 B2 JPH0525536 B2 JP H0525536B2
Authority
JP
Japan
Prior art keywords
substrate
anode
plasma
cathode
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61061395A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62216637A (ja
Inventor
Tatsuo Asamaki
Kyoshi Hoshino
Katsuzo Ukai
Yoichi Ino
Toshio Adachi
Tsutomu Tsukada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP6139586A priority Critical patent/JPS62216637A/ja
Priority to JP61239765A priority patent/JP2613377B2/ja
Publication of JPS62216637A publication Critical patent/JPS62216637A/ja
Publication of JPH0525536B2 publication Critical patent/JPH0525536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP6139586A 1986-03-19 1986-03-19 プラズマ処理装置 Granted JPS62216637A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6139586A JPS62216637A (ja) 1986-03-19 1986-03-19 プラズマ処理装置
JP61239765A JP2613377B2 (ja) 1986-03-19 1986-10-08 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6139586A JPS62216637A (ja) 1986-03-19 1986-03-19 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61239765A Division JP2613377B2 (ja) 1986-03-19 1986-10-08 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS62216637A JPS62216637A (ja) 1987-09-24
JPH0525536B2 true JPH0525536B2 (zh) 1993-04-13

Family

ID=13169922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6139586A Granted JPS62216637A (ja) 1986-03-19 1986-03-19 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS62216637A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2792558B2 (ja) * 1987-12-07 1998-09-03 株式会社日立製作所 表面処理装置および表面処理方法
JP2662656B2 (ja) * 1988-12-19 1997-10-15 東京エレクトロン株式会社 オゾン発生方法およびこれを用いたアッシング方法
JPH05335244A (ja) * 1992-05-29 1993-12-17 Anelva Corp アモルファスシリコン薄膜の成膜方法
US6896773B2 (en) 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US7095179B2 (en) 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
JP4643933B2 (ja) * 2004-07-06 2011-03-02 パナソニック株式会社 プラズマ処理方法およびプラグ形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105627A (en) * 1980-01-28 1981-08-22 Fuji Photo Film Co Ltd Manufacture of amorphous semiconductor
JPS60215777A (ja) * 1984-03-03 1985-10-29 エステイ−シ−　ピ−エルシ− 表面処理方法
JPS61213221A (ja) * 1985-03-19 1986-09-22 Japan Synthetic Rubber Co Ltd プラズマ重合膜の製法
JPS62103371A (ja) * 1985-10-30 1987-05-13 Hitachi Ltd プラズマ化学蒸着法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105627A (en) * 1980-01-28 1981-08-22 Fuji Photo Film Co Ltd Manufacture of amorphous semiconductor
JPS60215777A (ja) * 1984-03-03 1985-10-29 エステイ−シ−　ピ−エルシ− 表面処理方法
JPS61213221A (ja) * 1985-03-19 1986-09-22 Japan Synthetic Rubber Co Ltd プラズマ重合膜の製法
JPS62103371A (ja) * 1985-10-30 1987-05-13 Hitachi Ltd プラズマ化学蒸着法

Also Published As

Publication number Publication date
JPS62216637A (ja) 1987-09-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term