JPH05251756A - Current limiting element - Google Patents
Current limiting elementInfo
- Publication number
- JPH05251756A JPH05251756A JP4046770A JP4677092A JPH05251756A JP H05251756 A JPH05251756 A JP H05251756A JP 4046770 A JP4046770 A JP 4046770A JP 4677092 A JP4677092 A JP 4677092A JP H05251756 A JPH05251756 A JP H05251756A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- current
- temperature
- film
- superconducting film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、短絡電流を限流する
限流素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a current limiting element for limiting a short circuit current.
【０００２】[0002]
【従来の技術】図１は、例えば特開平２−２８１７６６
号公報に示された限流素子を示す斜視図である。図にお
いて、１は基材で、例えばチタン酸ストロンチウムでつ
くられたセラミック基板が用いられており、２はセラミ
ック基板１の上に形成された超電導膜、４は超電導膜２
の上に形成され、リ−ド線３Ａ、３Ｂに電気的に接続さ
れ、超電導膜２を安定化するための金属膜で、金属膜４
の抵抗値は超電導膜２の常電導抵抗値より小さくなるよ
うに構成されている。2. Description of the Related Art FIG. 1 shows, for example, Japanese Patent Laid-Open No. 2-281766.
It is a perspective view which shows the current limiting element shown by the publication. In the figure, 1 is a base material, for example, a ceramic substrate made of strontium titanate is used, 2 is a superconducting film formed on the ceramic substrate 1, and 4 is a superconducting film 2.
A metal film for stabilizing the superconducting film 2, which is formed on the upper surface of the metal film 4 and electrically connected to the lead wires 3A and 3B.
Of the superconducting film 2 is smaller than the normal conducting resistance value of the superconducting film 2.
【０００３】電流はリ−ド線３Ａ、金属膜４、超電導膜
２、金属膜４、リ−ド線３Ｂの経路で流れる。短絡事故
が発生して短絡電流が超電導膜２の臨界電流を越える
と、超電導膜２がクエンチして常電導状態になり超電導
膜２に常電導抵抗が発生し、電流が金属膜４に分流する
が、短絡電流は超電導膜２の常電導抵抗と金属膜４の抵
抗の合成抵抗で限流される。しかしながら、この時点で
は超電導膜２の温度は超電導膜２の臨界温度より低いの
で、短絡電流は僅かしか限流されない。超電導膜２に流
れる電流によるジュ―ル加熱によって超電導膜２の温度
が上昇し、超電導膜２の温度が超電導膜２の臨界温度を
越えると超電導膜２は高い抵抗を発生し、短絡電流が急
激に限流され、その後、超電導膜２が高い抵抗を維持
し、超電導膜２に流れる電流が小さい状態が持続され、
電流波形は図７のようになる。A current flows through the lead wire 3A, the metal film 4, the superconducting film 2, the metal film 4, and the lead wire 3B. When a short-circuit accident occurs and the short-circuit current exceeds the critical current of the superconducting film 2, the superconducting film 2 is quenched and enters the normal conducting state, the normal conducting resistance is generated in the superconducting film 2, and the current is shunted to the metal film 4. However, the short-circuit current is limited by the combined resistance of the normal conducting resistance of the superconducting film 2 and the resistance of the metal film 4. However, since the temperature of the superconducting film 2 is lower than the critical temperature of the superconducting film 2 at this point, the short-circuit current is limited only slightly. The temperature of the superconducting film 2 rises due to the jar heating due to the current flowing through the superconducting film 2, and when the temperature of the superconducting film 2 exceeds the critical temperature of the superconducting film 2, the superconducting film 2 generates high resistance and the short-circuit current suddenly increases. Current, the superconducting film 2 maintains a high resistance, and the state in which the current flowing through the superconducting film 2 is small is maintained.
The current waveform is as shown in FIG.
【０００４】[0004]
【発明が解決しようとする課題】従来の限流素子では、
金属膜４の抵抗値が超電導膜２の常電導抵抗値より小さ
くなるように構成されているので、短絡電流が超電導膜
２の臨界電流を越え超電導膜２がクエンチして常電導状
態になった後、超電導膜２に流れる電流が小さい。その
結果、超電導膜２の温度上昇速度が遅く、超電導膜２の
温度が臨界温度に達するまでの時間が長くなり、超電導
膜２が顕著な限流動作を始める時には短絡電流は大きく
なってしまっており、限流波高値が大きくなるという問
題点があった。従って、このような限流素子を半導体等
の分野で用いる場合、半導体の許容値を越え、半導体が
破壊してしまうおそれがあった。In the conventional current limiting device,
Since the resistance value of the metal film 4 is smaller than the normal conduction resistance value of the superconducting film 2, the short-circuit current exceeds the critical current of the superconducting film 2 and the superconducting film 2 is quenched to be in the normal conduction state. After that, the current flowing through the superconducting film 2 is small. As a result, the temperature rising rate of the superconducting film 2 is slow, the time until the temperature of the superconducting film 2 reaches the critical temperature becomes long, and the short-circuit current becomes large when the superconducting film 2 starts a remarkable current limiting operation. However, there has been a problem that the peak current limit increases. Therefore, when such a current limiting element is used in the field of semiconductors and the like, there is a possibility that the allowable value of the semiconductor may be exceeded and the semiconductor may be destroyed.
【０００５】この発明は、かかる問題点を解決するため
になされたもので、限流波高値が小さい限流素子を得る
ことを目的とする。The present invention has been made to solve the above problems, and an object thereof is to obtain a current limiting element having a small current limiting peak value.
【０００６】[0006]
【課題を解決するための手段】この発明は、超電導体と
この超電導体を安定化するための安定化用金属を備えた
限流素子において、超電導体の温度が超電導体の臨界温
度より低く、しかも超電導体に流れる電流が超電導体の
臨界電流より大きい条件下で、安定化用金属の抵抗値が
超電導体の抵抗値より大きくなるように構成し、超電導
体の超電導転移開始温度より高い温度において、安定化
用金属の抵抗値が超電導体の抵抗値より小さくなるよう
に構成したものである。The present invention relates to a current limiting device comprising a superconductor and a stabilizing metal for stabilizing the superconductor, wherein the temperature of the superconductor is lower than the critical temperature of the superconductor. Moreover, under the condition that the current flowing in the superconductor is larger than the critical current of the superconductor, the resistance value of the stabilizing metal is configured to be higher than the resistance value of the superconductor, and at a temperature higher than the superconducting transition start temperature of the superconductor The resistance value of the stabilizing metal is smaller than that of the superconductor.
【０００７】[0007]
【作用】上記のように構成された限流素子では、短絡電
流が超電導体の臨界電流を越え、超電導体がクエンチし
て常電導状態になった後、超電導体が臨界温度に達する
までは、従来の限流素子の場合と比べ超電導体に流れる
電流が大きい。従って、超電導体の温度が急速に上昇
し、超電導体の温度が臨界温度に達するまでの時間が短
くなり、短絡電流が小さい間に、超電導体が限流動作を
始めるので、従来の限流素子と比べ限流波高値が小さく
なる。また、超電導体の超電導転移開始温度より高い温
度においては従来と同様、安定化用金属の抵抗値が超電
導体の抵抗値より小さくなるように構成されているの
で、超電導体の局所的な溶断を起こしにくくすることが
できる。In the current limiting element configured as described above, the short-circuit current exceeds the critical current of the superconductor, and after the superconductor is quenched to be in the normal conducting state, until the superconductor reaches the critical temperature, The current flowing through the superconductor is larger than that of the conventional current limiting element. Therefore, the temperature of the superconductor rapidly rises, the time until the temperature of the superconductor reaches the critical temperature is shortened, and the superconductor starts the current limiting operation while the short-circuit current is small. Compared with, the peak current limit becomes smaller. Also, at a temperature higher than the superconducting transition start temperature of the superconductor, the resistance value of the stabilizing metal is configured to be smaller than the resistance value of the superconductor, so that the local melting of the superconductor is prevented. It can be hard to wake up.
【０００８】[0008]
【実施例】実施例１．図１はこの発明の一実施例を示す
斜視図であり、１は基材で、例えばチタン酸ストロンチ
ウムでつくられたセラミック基板が用いられており、２
はセラミック基板１の上に形成された超電導体で、例え
ばイットリウム系の高温超電導体であり、この実施例で
は幅１ｍｍ、厚さ０．３μｍの超電導膜が用いられてい
る。４は超電導膜２の上に形成され、リ−ド線３Ａ、３
Ｂに電気的に接続され、超電導膜２を安定化するための
金属膜で、例えばアルゴン中でグロー放電スパッタ法で
形成されたＡｇの膜（幅１ｍｍ、厚さ１０００オングス
トローム）であり、超電導膜の温度が超電導膜の臨界温
度より低く、しかも超電導膜に流れる電流が超電導膜の
臨界電流より大きい条件下で、金属膜の抵抗値が超電導
膜の抵抗値より大きくなるように構成され、超電導膜の
超電導転移開始温度より高い温度において、金属膜の抵
抗値が超電導膜の抵抗値より小さくなるように構成され
ている。EXAMPLES Example 1. FIG. 1 is a perspective view showing an embodiment of the present invention, in which 1 is a base material, for example, a ceramic substrate made of strontium titanate is used.
Is a superconductor formed on the ceramic substrate 1 and is, for example, a yttrium-based high-temperature superconductor. In this embodiment, a superconducting film having a width of 1 mm and a thickness of 0.3 μm is used. 4 is formed on the superconducting film 2, and the lead wires 3A, 3
A metal film electrically connected to B for stabilizing the superconducting film 2, for example, an Ag film (width 1 mm, thickness 1000 Å) formed by a glow discharge sputtering method in argon. Is lower than the critical temperature of the superconducting film, and the current flowing through the superconducting film is larger than the critical current of the superconducting film, the resistance value of the metal film is set to be higher than the resistance value of the superconducting film. The resistance value of the metal film is smaller than the resistance value of the superconducting film at a temperature higher than the superconducting transition start temperature.
【０００９】短絡事故が発生して短絡電流が超電導膜２
の臨界電流を越えると、超電導膜２がクエンチして常電
導状態になり超電導膜２に常電導抵抗が発生し、電流が
金属膜４に分流するが、短絡電流は超電導膜２の常電導
抵抗と金属膜４の抵抗の合成抵抗で限流される。しかし
ながら、この時点では超電導膜２の温度は超電導膜２の
臨界温度より低いので、短絡電流は僅かしか限流されな
い。超電導膜２に流れる電流によるジュ―ル加熱によっ
て超電導膜２の温度が上昇し、超電導膜２の温度が超電
導膜２の臨界温度を越えると超電導膜２は高い抵抗を発
生し短絡電流が急激に限流され、その後、超電導膜２が
高い抵抗を維持し超電導膜２に流れる電流が小さい状態
が持続され、電流波形は図２のようになる。When a short-circuit accident occurs, the short-circuit current is generated by the superconducting film 2.
When the critical current of the superconducting film 2 is exceeded, the superconducting film 2 is quenched to be in the normal conducting state, and the normal conducting resistance is generated in the superconducting film 2, and the current is shunted to the metal film 4. However, the short-circuit current is the normal conducting resistance of the superconducting film 2. And the combined resistance of the resistance of the metal film 4 limits the current. However, since the temperature of the superconducting film 2 is lower than the critical temperature of the superconducting film 2 at this point, the short-circuit current is limited only slightly. The temperature of the superconducting film 2 rises due to the jar heating due to the current flowing in the superconducting film 2, and when the temperature of the superconducting film 2 exceeds the critical temperature of the superconducting film 2, the superconducting film 2 generates high resistance and the short-circuit current suddenly increases. After the current is limited, the state where the superconducting film 2 maintains a high resistance and the current flowing through the superconducting film 2 is small is maintained, and the current waveform is as shown in FIG.
【００１０】ところで、この発明では、超電導膜の温度
が超電導膜の臨界温度より低く、しかも超電導膜に流れ
る電流が超電導膜の臨界電流より大きい条件下で、金属
膜の抵抗値が超電導膜の抵抗値より大きくなるように構
成されている。従って、短絡電流が超電導膜２の臨界電
流を越え超電導膜２がクエンチして常電導状態になった
後、超電導膜２に流れる電流が大きい。従って、超電導
膜２の温度が急速に上昇し超電導膜２の温度が臨界温度
に達するまでの時間が短くなり、短絡電流が小さい間
に、超電導膜２が限流動作を始めるので、従来の限流素
子と比べ限流波高値が小さくなる。By the way, according to the present invention, the resistance value of the superconducting film is lower than that of the superconducting film when the temperature of the superconducting film is lower than the critical temperature of the superconducting film and the current flowing through the superconducting film is larger than the critical current of the superconducting film. It is configured to be larger than the value. Therefore, after the short-circuit current exceeds the critical current of the superconducting film 2 and the superconducting film 2 is quenched to be in the normal conducting state, a large current flows through the superconducting film 2. Therefore, the temperature of the superconducting film 2 rapidly rises, the time until the temperature of the superconducting film 2 reaches the critical temperature is shortened, and the superconducting film 2 starts the current limiting operation while the short circuit current is small. The current limiting crest value is smaller than that of the current element.
【００１１】また、超電導膜の超電導転移開始温度より
高い温度においては、従来と同様、金属膜の抵抗値が超
電導膜の抵抗値より小さくなるように構成されているの
で、超電導膜２に臨界電流、膜質、膜厚などの不均一に
基ずく局所的な過度温度上昇があっても、超電導膜２に
流れる電流の大半を金属膜に分流できるので、超電導膜
２の局所的溶断を顕著に起こしにくくすることができ
る。At a temperature higher than the superconducting transition start temperature of the superconducting film, the resistance value of the metal film is smaller than the resistance value of the superconducting film as in the conventional case. Even if there is a local excessive temperature rise due to non-uniformity in film quality, film thickness, etc., most of the current flowing in the superconducting film 2 can be shunted to the metal film, so that local fusing of the superconducting film 2 is significantly caused. Can be hardened.
【００１２】実施例２．図３はセラミック基板１の両面
に金属膜と超電導膜を形成したものである。図におい
て、１はセラミック基材で、この実施例では例えばチタ
ン酸ストロンチウムでつくられたセラミック基板が用い
られており、２、２Ａはそれぞれ超電導膜、４、４Ａは
それぞれ超電導膜２、２Ａの上に形成された金属膜で、
リ−ド線３Ａ、３Ｂは金属膜４に電気的に接続され、リ
−ド線３Ｃ、３Ｄは金属膜４Ａに電気的に接続されてい
る。電流はリ−ド線３Ａ、金属膜４、超電導膜２、金属
膜４、リ−ド線３Ｂの経路で、また、リ−ド線３Ｃ、金
属膜４Ａ、超電導膜２Ａ、金属膜４Ａ、リ−ド線３Ｄの
経路で流れる。図３に示す実施例では、セラミック基板
１の両面に超電導膜を形成したので、大電流の超電導素
子を得ることができる。Example 2. In FIG. 3, a metal film and a superconducting film are formed on both surfaces of the ceramic substrate 1. In the figure, 1 is a ceramic substrate, and in this embodiment, a ceramic substrate made of, for example, strontium titanate is used, 2 and 2A are superconducting films, 4 and 4A are superconducting films 2 and 2A, respectively. Is a metal film formed on
The lead lines 3A and 3B are electrically connected to the metal film 4, and the lead lines 3C and 3D are electrically connected to the metal film 4A. The current flows through the lead wire 3A, the metal film 4, the superconducting film 2, the metal film 4 and the lead wire 3B, and the lead wire 3C, the metal film 4A, the superconducting film 2A, the metal film 4A and the lead film 3A. -It flows in the path of the line 3D. In the embodiment shown in FIG. 3, since the superconducting films are formed on both surfaces of the ceramic substrate 1, a large-current superconducting element can be obtained.
【００１３】実施例３．図１と図３の実施例では、セラ
ミック基材として板材を用いたが、セラミック基材とし
ては板材以外のものを使用してもよく、例えば図４に示
すような円柱状のものでもよい。Embodiment 3. Although the plate material is used as the ceramic base material in the embodiments of FIGS. 1 and 3, a material other than the plate material may be used as the ceramic base material, for example, a cylindrical material as shown in FIG.
【００１４】実施例４．以上の実施例では、超電導体と
して超電導膜が用いられているが、図５に示されている
ように線材が用いられてもよい。図５において、２は線
状の超電導体、４はこの超電導体２を安定化するための
安定化用金属で、超電導体２と安定化用金属４で超電導
線が形成されており、３Ａと３Ｂはリ―ド線で超電導線
に電気的に接続されている。Example 4. In the above embodiments, the superconducting film is used as the superconductor, but a wire may be used as shown in FIG. In FIG. 5, 2 is a linear superconductor, 4 is a stabilizing metal for stabilizing the superconductor 2, and the superconducting wire is formed by the superconductor 2 and the stabilizing metal 4, and 3A 3B is a lead wire electrically connected to the superconducting wire.
【００１５】なお、超電導体２と安定化用金属４で構成
された上記超電導線は図６に示されているような螺旋状
に形成されてもよい。The superconducting wire composed of the superconductor 2 and the stabilizing metal 4 may be formed in a spiral shape as shown in FIG.
【００１６】[0016]
【発明の効果】以上のように、この発明によれば超電導
体とこの超電導体を安定化するための安定化用金属を備
えた限流素子において、超電導体の温度が超電導体の臨
界温度より低く、しかも超電導体に流れる電流が超電導
体の臨界電流より大きい条件下で、安定化用金属の抵抗
値が超電導体の抵抗値より大きくなるように構成し、超
電導体の超電導転移開始温度より高い温度において、安
定化用金属の抵抗値が超電導体の抵抗値より小さくなる
ように構成したので、限流波高値が小さい限流素子が得
られる効果がある。As described above, according to the present invention, in the current limiting device including the superconductor and the stabilizing metal for stabilizing the superconductor, the temperature of the superconductor is higher than the critical temperature of the superconductor. Under conditions where the current flowing through the superconductor is lower than the critical current of the superconductor, the resistance value of the stabilizing metal is higher than the resistance value of the superconductor, and is higher than the superconducting transition start temperature of the superconductor. Since the resistance value of the stabilizing metal is smaller than the resistance value of the superconductor at temperature, there is an effect that a current limiting element having a small current limiting peak value can be obtained.
【図１】従来及びこの発明の実施例１による限流素子を
示す斜視図である。FIG. 1 is a perspective view showing a current limiting element according to a related art and a first embodiment of the present invention.
【図２】この発明の実施例１の限流波形を示す説明図で
ある。FIG. 2 is an explanatory diagram showing a current limiting waveform according to the first embodiment of the present invention.
【図３】この発明の実施例２による限流素子を示す斜視
図である。FIG. 3 is a perspective view showing a current limiting element according to a second embodiment of the present invention.
【図４】この発明の実施例３による限流素子を示す斜視
図である。FIG. 4 is a perspective view showing a current limiting element according to a third embodiment of the present invention.
【図５】この発明の実施例４による限流素子を示す斜視
図である。FIG. 5 is a perspective view showing a current limiting element according to Embodiment 4 of the present invention.
【図６】この発明の実施例４による他の限流素子を示す
斜視図である。FIG. 6 is a perspective view showing another current limiting element according to Embodiment 4 of the present invention.
【図７】従来の限流波形を示す説明図である。FIG. 7 is an explanatory diagram showing a conventional current limiting waveform.
２ 超電導体 ２Ａ 超電導体 ４ 安定化用金属 ４Ａ 安定化用金属 2 Superconductor 2A Superconductor 4 Stabilizing metal 4A Stabilizing metal
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松野 繁 尼崎市塚口本町８丁目１番１号 三菱電機 株式会社材料デバイス研究所内 (72)発明者 木ノ内 伸一 尼崎市塚口本町８丁目１番１号 三菱電機 株式会社材料デバイス研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Shigeru Matsuno 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Material Devices Research Center (72) Inventor Shinichi Kinouchi 8-1-1 Tsukaguchihonmachi, Amagasaki Mitsubishi Electric Devices Co., Ltd. Material Device Research Center
Claims (1)
れ、上記超電導体を安定化する安定化用金属を備えた限
流素子において、上記超電導体の温度が上記超電導体の
臨界温度より低く、しかも上記超電導体に流れる電流が
上記超電導体の臨界電流より大きい条件下で、上記安定
化用金属の抵抗値が上記超電導体の抵抗値より大きくな
るように構成するとともに、上記超電導体の超電導転移
開始温度より高い温度において、上記安定化用金属の抵
抗値が上記超電導体の抵抗値より小さくなるように構成
したことを特徴とする限流素子。1. A current limiting element comprising a superconductor and a stabilizing metal provided on the superconductor for stabilizing the superconductor, wherein the temperature of the superconductor is lower than a critical temperature of the superconductor. Moreover, under the condition that the current flowing in the superconductor is larger than the critical current of the superconductor, the resistance value of the stabilizing metal is set to be higher than the resistance value of the superconductor, and the superconductivity of the superconductor is increased. A current limiting element characterized in that the resistance value of the stabilizing metal is smaller than the resistance value of the superconductor at a temperature higher than the transition start temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4046770A JP3024347B2 (en) | 1992-03-04 | 1992-03-04 | Current limiting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4046770A JP3024347B2 (en) | 1992-03-04 | 1992-03-04 | Current limiting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05251756A true JPH05251756A (en) | 1993-09-28 |
| JP3024347B2 JP3024347B2 (en) | 2000-03-21 |
Family
ID=12756568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4046770A Expired - Fee Related JP3024347B2 (en) | 1992-03-04 | 1992-03-04 | Current limiting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3024347B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100722317B1 (en) * | 2005-10-28 | 2007-05-28 | 한국전력공사 | A superconductivity current limiting device based on superconductor and non-linear conductor composite system |
| WO2019143813A1 (en) * | 2018-01-19 | 2019-07-25 | Varian Semiconductor Equipment Associates, Inc. | Superconducting fault current limiter having improved energy handling |
| WO2020093880A1 (en) * | 2018-11-08 | 2020-05-14 | 华南理工大学 | Magnetic magnesium-manganese layered double metal oxide composite material, preparation and application |
-
1992
- 1992-03-04 JP JP4046770A patent/JP3024347B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100722317B1 (en) * | 2005-10-28 | 2007-05-28 | 한국전력공사 | A superconductivity current limiting device based on superconductor and non-linear conductor composite system |
| WO2019143813A1 (en) * | 2018-01-19 | 2019-07-25 | Varian Semiconductor Equipment Associates, Inc. | Superconducting fault current limiter having improved energy handling |
| US11031774B2 (en) | 2018-01-19 | 2021-06-08 | Varian Semiconductor Equipment Associates, Inc. | Superconducting fault current limiter having improved energy handling |
| WO2020093880A1 (en) * | 2018-11-08 | 2020-05-14 | 华南理工大学 | Magnetic magnesium-manganese layered double metal oxide composite material, preparation and application |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3024347B2 (en) | 2000-03-21 |
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