JP3331610B2 - Superconducting element - Google Patents
Superconducting elementInfo
- Publication number
- JP3331610B2 JP3331610B2 JP03759892A JP3759892A JP3331610B2 JP 3331610 B2 JP3331610 B2 JP 3331610B2 JP 03759892 A JP03759892 A JP 03759892A JP 3759892 A JP3759892 A JP 3759892A JP 3331610 B2 JP3331610 B2 JP 3331610B2
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- film
- superconducting film
- metal film
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 36
- 239000000919 ceramic Substances 0.000 claims description 31
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Emergency Protection Circuit Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミック基材を備え
た超電導素子に関するもので、例えば短絡電流を限流す
る限流器に応用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a superconducting element having a ceramic substrate, and is applied to, for example, a current limiting device for limiting a short-circuit current.
【０００２】[0002]
【従来の技術】図５は、例えば特開平２−２８１７６５
号公報に示された従来の超電導素子を示す斜視図であ
る。図において、１は基材で、例えばチタン酸ストロン
チウムでつくられたセラミック基板が用いられており、
２は超電導膜、４はリ−ド線３Ａ、３Ｂに電気的に接続
された金属膜で超電導膜２を安定化するために用いられ
ている。上記のように構成された従来の超電導素子は例
えば液体窒素のような冷媒に浸されて使用される。電流
はリ−ド線３Ａ、金属膜４、超電導膜２、金属膜４、リ
−ド線３Ｂの経路で流れる。2. Description of the Related Art FIG.
FIG. 1 is a perspective view showing a conventional superconducting element disclosed in Japanese Patent Application Laid-Open Publication No. H10-209,004. In the figure, 1 is a base material, for example, a ceramic substrate made of strontium titanate is used,
Reference numeral 2 denotes a superconducting film, and 4 denotes a metal film electrically connected to the lead wires 3A and 3B, which is used for stabilizing the superconducting film 2. The conventional superconducting element configured as described above is used by being immersed in a coolant such as liquid nitrogen. The current flows through the path of the lead wire 3A, the metal film 4, the superconducting film 2, the metal film 4, and the lead wire 3B.
【０００３】[0003]
【発明が解決しようとする課題】従来の超電導素子は上
記のように構成されいるため、超電導膜２が冷媒に直接
接しないので、超電導膜２が冷媒によって冷却されにく
くなる。従って、超電導膜２が金属膜４によって安定化
されているとはいえ、超電導膜２に過大な電流が流れた
場合、超電導膜が溶断しやすいという問題点があった。
また、その結果、超電導素子を電源電圧が高い回路に適
用できないという問題点があった。Since the conventional superconducting element is constructed as described above, the superconducting film 2 does not come into direct contact with the refrigerant, so that it is difficult for the superconducting film 2 to be cooled by the refrigerant. Therefore, although the superconducting film 2 is stabilized by the metal film 4, there is a problem that the superconducting film is easily blown when an excessive current flows through the superconducting film 2.
As a result, there is a problem that the superconducting element cannot be applied to a circuit having a high power supply voltage.
【０００４】さらに、高い臨界電流密度を得るためには
超電導膜の配向性を高める必要があり、超電導膜の配向
性を高めるため、従来の超電導素子では、基材１として
単結晶のセラミックが用いられている。上記のような従
来の超電導素子では、基材１として単結晶のセラミック
を用いる必要があるが、大きな単結晶セラミックを作る
ことができないため、大電流通電に必要な大形の超電導
素子を作れないという問題点があった。基材１として多
結晶のセラミックを用い大形の超電導素子を作っても超
電導膜の配向性が悪く、臨界電流密度が大きい超電導膜
を得ることができないという問題点があった。Further, in order to obtain a high critical current density, it is necessary to increase the orientation of the superconducting film. In order to enhance the orientation of the superconducting film, a conventional superconducting element uses a single-crystal ceramic as the substrate 1. Have been. In the conventional superconducting element as described above, it is necessary to use a single-crystal ceramic as the base material 1. However, since a large single-crystal ceramic cannot be produced, a large-sized superconducting element required for supplying a large current cannot be produced. There was a problem. Even if a large-sized superconducting element is made using polycrystalline ceramic as the substrate 1, there is a problem that the orientation of the superconducting film is poor and a superconducting film having a large critical current density cannot be obtained.
【０００５】本発明は、かかる問題点を解決するために
なされたもので、超電導膜２が溶断しにくい超電導素子
を得ることを目的としている。さらに、基材１として多
結晶のセラミックを用いて臨界電流密度と臨界電流が大
きい超電導膜を備えた超電導素子を得ることを目的とし
ている。The present invention has been made to solve such a problem, and an object of the present invention is to provide a superconducting element in which the superconducting film 2 is hardly blown. A further object is to obtain a superconducting element provided with a superconducting film having a large critical current density and a large critical current by using a polycrystalline ceramic as the substrate 1.
【０００６】[0006]
【課題を解決するための手段】本発明にかかる超電導素
子は、多結晶のセラミック基材の上に金属膜を直接形成
し、その金属膜の上に超電導膜を直接形成し、かつ金属
膜の表面積が超電導膜の表面積より大きくなるように構
成したものである。A superconducting element according to the present invention comprises a metal film directly formed on a polycrystalline ceramic substrate, a superconducting film formed directly on the metal film, and The structure is such that the surface area is larger than the surface area of the superconducting film.
【０００７】[0007]
【０００８】[0008]
【０００９】[0009]
【作用】上記のように構成された超電導素子では、超電
導膜が冷媒に直接接するので、冷媒による超電導膜の冷
却が十分行われ、超電導膜を溶断しにくくできる。In the superconducting element constructed as described above, since the superconducting film is in direct contact with the refrigerant, the superconducting film is sufficiently cooled by the refrigerant, and the superconducting film can be hardly blown.
【００１０】また、金属膜の表面積が超電導膜の表面積
より大きくなるように構成すれば、金属膜から周囲媒体
への熱放散を大きくすることができるので、金属膜の温
度上昇を抑制できる。従って、金属膜を溶断しにくくで
きる。また、金属膜の温度上昇を抑制できるので、金属
膜の上に形成された超電導膜の温度上昇を抑制でき、そ
の結果、超電導膜を溶断しにくくできる。さらに、超電
導膜を溶断しにくくできる結果、電源電圧がより高い回
路においても超電導膜が耐えるようになるので、超電導
素子の適用限界電圧を高められるという大きな特徴も付
与することができる。If the surface area of the metal film is configured to be larger than the surface area of the superconducting film, the heat dissipation from the metal film to the surrounding medium can be increased, so that the temperature rise of the metal film can be suppressed. Therefore, the metal film can be hardly blown. Further, since the temperature rise of the metal film can be suppressed, the temperature increase of the superconducting film formed on the metal film can be suppressed, and as a result, the superconducting film can be hardly blown. Further, the superconducting film can be hardly blown, so that the superconducting film can endure even in a circuit having a higher power supply voltage, so that a great feature that the applicable limit voltage of the superconducting element can be increased can be provided.
【００１１】さらに、上記のように構成された超電導素
子では、超電導膜がセラミック基材に接触しなくなり、
超電導膜がセラミック基材の影響を受けなくなる。すな
わち、多結晶など基板の結晶状態や格子定数ならびに基
板と超電導膜との化学反応等の影響がほとんどなくな
る。従って、セラミック基材として多結晶のセラミック
基材を用いることができる。また、金属膜を形成したし
たことにより、セラミック基材が多結晶であっても、超
電導膜が局所的にクエンチした場合、この金属膜が超電
導膜を保護するので、超電導膜を溶断しにくくすること
ができる。Further, in the superconducting element configured as described above, the superconducting film does not contact the ceramic base,
The superconducting film is no longer affected by the ceramic substrate. That is, the effects of the crystal state and lattice constant of the substrate such as polycrystal, the chemical reaction between the substrate and the superconducting film, and the like are almost eliminated. Therefore, a polycrystalline ceramic substrate can be used as the ceramic substrate. Also, by forming the metal film, even if the ceramic substrate is polycrystalline, when the superconducting film is locally quenched, the metal film protects the superconducting film, so that the superconducting film is hardly blown. be able to.
【００１２】[0012]
【実施例】実施例１．図１は本発明の一実施例を示す図
であり、１は基材で、この実施例では例えばチタン酸ス
トロンチウムでつくられたセラミック基板が用いられて
おり、２は超電導膜、３Ａ、３Ｂはそれぞれ超電導膜２
に電気的に接続されたリ−ド線、４は超電導膜２とセラ
ミック基板１の間に形成された例えば銀製の金属膜で、
セラミック基板１の上に、まず金属膜４が形成され、次
に金属膜４の上に超電導膜２が形成される。電流はリ−
ド線３Ａ、超電導膜２、リ−ド線３Ｂの経路で流れる。
上記のように構成された超電導素子では、超電導膜２が
冷媒に直接接するので、冷媒による超電導膜２の冷却が
十分行われ、超電導膜を溶断しにくくできる。[Embodiment 1] FIG. 1 is a view showing one embodiment of the present invention, wherein 1 is a substrate, in this embodiment a ceramic substrate made of, for example, strontium titanate is used, 2 is a superconducting film, 3A and 3B are Each superconducting film 2
A lead wire 4 electrically connected to the superconducting film 2 and the ceramic substrate 1 is, for example, a silver metal film formed between the superconducting film 2 and the ceramic substrate 1.
First, a metal film 4 is formed on a ceramic substrate 1, and then a superconducting film 2 is formed on the metal film 4. The current is
Flow through the path of the lead wire 3A, the superconducting film 2, and the lead wire 3B.
In the superconducting element configured as described above, since the superconducting film 2 is in direct contact with the refrigerant, the superconducting film 2 is sufficiently cooled by the refrigerant, and the superconducting film can be hardly blown.
【００１３】なお、本発明では、多結晶など基板の結晶
状態や格子定数ならびに基板と超電導膜との化学反応等
の影響がほとんどない金属膜４の上に超電導膜２が形成
されているので、セラミック基材１として多結晶のセラ
ミック基材を用いることができ、臨界電流密度と臨界電
流が大きい超電導素子を得ることができる。In the present invention, the superconducting film 2 is formed on the metal film 4 which is hardly affected by the crystal state and lattice constant of the substrate such as polycrystal and the chemical reaction between the substrate and the superconducting film. A polycrystalline ceramic substrate can be used as the ceramic substrate 1, and a superconducting element having a large critical current density and a large critical current can be obtained.
【００１４】実施例２．図２はセラミック基板１の両面
に金属膜４と超電導膜２を形成したものである。図２に
おいて、１はセラミック基材で、この実施例では例えば
チタン酸ストロンチウムでつくられたセラミック基板が
用いられており、２、２Ａはそれぞれ超電導膜、３Ａ、
３Ｂはそれぞれ超電導膜２に電気的に接続されたリ−ド
線、３Ｃ、３Ｄはそれぞれ超電導膜２Ａに電気的に接続
されたリ−ド線、４、４Ａはそれぞれ超電導膜２、２Ａ
とセラミック基材１の間に形成された金属膜で、セラミ
ック基材１の上に、まず金属膜４、４Ａが形成され、次
に金属膜４、４Ａの上に超電導膜２、２Ａが形成され
る。電流はリ−ド線３Ａ、超電導膜２、リ−ド線３Ｂの
経路で、また、リ−ド線３Ｃ、超電導膜２Ａ、リ−ド線
３Ｄの経路で流れる。図２に示す実施例では、セラミッ
ク基板１の両面に超電導膜２を形成したので、大電流の
超電導素子を得ることができる。Embodiment 2 FIG. FIG. 2 shows a ceramic substrate 1 in which a metal film 4 and a superconducting film 2 are formed on both surfaces. In FIG. 2, reference numeral 1 denotes a ceramic substrate, and in this embodiment, a ceramic substrate made of, for example, strontium titanate is used.
3B is a lead wire electrically connected to the superconducting film 2 respectively, 3C and 3D are lead wires electrically connected to the superconducting film 2A, respectively, and 4 and 4A are superconducting films 2 and 2A respectively.
And a metal film formed between the ceramic substrate 1 and the metal films 4 and 4A are formed first on the ceramic substrate 1 and then the superconducting films 2 and 2A are formed on the metal films 4 and 4A. Is done. The current flows through the path of the lead wire 3A, the superconducting film 2, and the lead line 3B, and flows through the path of the lead line 3C, the superconducting film 2A, and the lead line 3D. In the embodiment shown in FIG. 2, since the superconducting films 2 are formed on both surfaces of the ceramic substrate 1, a superconducting element having a large current can be obtained.
【００１５】実施例３．なお、図１と図２の実施例で
は、セラミック基材１として板材を用いたが、板材以外
のものを使用してもよく、例えば図３に示すような円柱
状のものでもよい。Embodiment 3 FIG. In the embodiments of FIGS. 1 and 2, a plate material is used as the ceramic substrate 1. However, a material other than the plate material may be used. For example, a columnar material as shown in FIG. 3 may be used.
【００１６】実施例４． また、図４に示すように、金属膜４の表面積が超電導膜
２の表面積より大きくなるように構成すれば、金属膜４
から周囲媒体への熱放散を大きくすることができるの
で、金属膜４の温度上昇を抑制できる。従って、金属膜
４を溶断しにくくできる。また、金属膜４の温度上昇を
抑制できるので、金属膜４の上に形成された超電導膜２
の温度上昇を抑制でき、その結果、超電導膜２を溶断し
にくくできる。また、金属膜４が露出した部分の温度が
低いことから金属膜４の露出部の抵抗が低くなり、電流
は露出部に多く流れるようになるので、超電導膜２の温
度上昇を抑制できる。さらに、超電導膜２を溶断しにく
くできる結果、電源電圧がより高い回路においても超電
導膜２が耐えるようになるので、超電導素子の適用限界
電圧を高められるという大きな特徴も付与することがで
きる。Embodiment 4 FIG. Further, as shown in FIG. 4, if the surface area of the metal film 4 is configured to be larger than the surface area of the superconducting film 2, the metal film 4
The heat dissipation from the metal film to the surrounding medium can be increased, so that the temperature rise of the metal film 4 can be suppressed. Therefore, the metal film 4 can be hardly blown. Further, since the temperature rise of the metal film 4 can be suppressed, the superconducting film 2 formed on the metal film 4 can be suppressed.
Can be suppressed, and as a result, the superconducting film 2 can be hardly blown. Further, since the temperature of the portion where the metal film 4 is exposed is low, the resistance of the exposed portion of the metal film 4 becomes low, and a large amount of current flows to the exposed portion, so that the temperature rise of the superconducting film 2 can be suppressed. Furthermore, since the superconducting film 2 can be hardly blown, the superconducting film 2 can endure even in a circuit having a higher power supply voltage, so that a great feature that the applicable limit voltage of the superconducting element can be increased can be provided.
【００１７】また、超電導膜２には膜厚や臨界電流密度
の不均一があるため、短絡電流が流れると超電導膜２の
温度上昇が不均一となる。超電導膜２内における臨界電
流が小さい部分の温度が他の部分の温度と比べ高くな
り、超電導膜２内における臨界電流が小さい部分が他の
部分と比べ短い時間で局所的に溶断する。図４に示すよ
うに、金属膜４の表面積が超電導膜２の表面積より大き
くなるように構成すれば、金属膜４から周囲媒体への熱
放散を大きくすることができるので、金属膜４の局所的
な温度上昇を抑制できる。従って、金属膜４の局所的な
溶断を起こしにくくできる。さらに、金属膜４の局所的
な温度上昇を抑制できるので、超電導膜２の局所的な温
度上昇を抑制でき、その結果、超電導膜２の局所的な溶
断を起こしにくくできるという大きな特徴も付与するこ
とができる。Further, since the superconducting film 2 has non-uniform thickness and critical current density, the temperature rise of the superconducting film 2 becomes uneven when a short-circuit current flows. The temperature of the portion where the critical current is small in the superconducting film 2 becomes higher than the temperature of other portions, and the portion where the critical current is small in the superconducting film 2 is locally blown in a shorter time than the other portions. As shown in FIG. 4, if the surface area of the metal film 4 is configured to be larger than the surface area of the superconducting film 2, the heat dissipation from the metal film 4 to the surrounding medium can be increased. Temperature rise can be suppressed. Therefore, local melting of the metal film 4 can be suppressed. Furthermore, since the local temperature rise of the metal film 4 can be suppressed, the local temperature rise of the superconducting film 2 can be suppressed, and as a result, a great feature that the local melting of the superconducting film 2 can be hardly caused is provided. be able to.
【００１８】なお、本発明では、多結晶など基板の結晶
状態や格子定数ならびに基板と超電導膜との化学反応等
の影響がほとんどない金属膜４の上に超電導膜２が形成
されているので、実施例２〜４においても、セラミック
基材として多結晶のセラミック基材を用いることがで
き、臨界電流密度と臨界電流が大きい超電導素子を得る
ことができる。In the present invention, the superconducting film 2 is formed on the metal film 4 which is hardly affected by the crystal state and lattice constant of the substrate such as polycrystal and the chemical reaction between the substrate and the superconducting film. Also in Examples 2 to 4, a polycrystalline ceramic substrate can be used as the ceramic substrate, and a superconducting element having a large critical current density and a large critical current can be obtained.
【００１９】[0019]
【発明の効果】以上のように、本発明によれば、多結晶
のセラミック基材上に直接形成された金属膜、および上
記金属膜上に直接形成された超電導膜を備え、かつ上記
金属膜の表面積が上記超電導膜の表面積より大きくなる
ように構成したので、超電導膜が冷媒に直接接するの
で、冷媒による超電導膜の冷却が十分行われ、超電導膜
を溶断しにくくできると共に、限流素子の適用限界電圧
を高められる。しかも、多結晶のセラミック基材を用い
るので、臨界電流が大きい大形の超電導素子を得ること
ができる。As described above, according to the present invention, there are provided a metal film directly formed on a polycrystalline ceramic substrate, and a superconducting film formed directly on the metal film, and Since the surface area of the superconducting film is configured to be larger than the surface area of the superconducting film, the superconducting film is in direct contact with the refrigerant, so that the superconducting film is sufficiently cooled by the refrigerant, and the superconducting film can be hardly blown, and the current limiting element The application limit voltage can be increased. Moreover, since a polycrystalline ceramic substrate is used, a large superconducting element having a large critical current can be obtained.
【００２０】[0020]
【００２１】[0021]
【図１】この発明の実施例１を示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of the present invention.
【図２】この発明の実施例２を示す斜視図である。FIG. 2 is a perspective view showing Embodiment 2 of the present invention.
【図３】この発明の実施例３を示す斜視図である。FIG. 3 is a perspective view showing Embodiment 3 of the present invention.
【図４】この発明の実施例４を示す斜視図である。FIG. 4 is a perspective view showing Embodiment 4 of the present invention.
【図５】従来の超電導素子を示す斜視図である。FIG. 5 is a perspective view showing a conventional superconducting element.
１ 基材または基板 ２ 超電導膜 ２Ａ 超電導膜 ３Ａ リ−ド線 ３Ｂ リ−ド線 ４ 金属膜 ４Ａ 金属膜 Reference Signs List 1 base material or substrate 2 superconducting film 2A superconducting film 3A lead wire 3B lead wire 4 metal film 4A metal film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木ノ内 伸一 尼崎市塚口本町８丁目１番１号 三菱電 機株式会社 材料デバイス研究所内 審査官 小川 将之 (56)参考文献 特開 平４−14881（ＪＰ，Ａ) 特開 平４−33382（ＪＰ，Ａ) 特開 昭64−52321（ＪＰ，Ａ) 特開 昭61−267381（ＪＰ，Ａ) 特開 昭60−137077（ＪＰ，Ａ) 特開 平２−311397（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 39/14 - 39/16 H01B 12/00 - 12/16 H02H 9/02 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Shinichi Shinouchi 8-1-1, Tsukaguchi-Honmachi, Amagasaki-shi Examiner, Masayuki Ogawa, Materials and Devices Laboratory, Mitsubishi Electric Corporation (56) References JP-A-4-14881 ( JP, A) JP-A-4-33382 (JP, A) JP-A-64-52321 (JP, A) JP-A-61-267381 (JP, A) JP-A-60-137077 (JP, A) Hei 2-311397 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 39/14-39/16 H01B 12/00-12/16 H02H 9/02
Claims (1)
れた金属膜、および上記金属膜上に直接形成された超電
導膜を備え、かつ上記金属膜の表面積が上記超電導膜の
表面積より大きくなるように構成した超電導素子。1. A metal film directly formed on a polycrystalline ceramic substrate, and a superconducting film formed directly on the metal film, wherein a surface area of the metal film is larger than a surface area of the superconducting film. Superconducting element configured as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03759892A JP3331610B2 (en) | 1992-02-25 | 1992-02-25 | Superconducting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03759892A JP3331610B2 (en) | 1992-02-25 | 1992-02-25 | Superconducting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05235421A JPH05235421A (en) | 1993-09-10 |
| JP3331610B2 true JP3331610B2 (en) | 2002-10-07 |
Family
ID=12502007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03759892A Expired - Fee Related JP3331610B2 (en) | 1992-02-25 | 1992-02-25 | Superconducting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3331610B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19836860A1 (en) | 1998-08-14 | 2000-02-17 | Abb Research Ltd | Electrically stabilized thin film high temperature superconductor, useful as a fault current limiter, comprises a superconducting layer in interrupted contact with a metal substrate to avoid hot spots |
-
1992
- 1992-02-25 JP JP03759892A patent/JP3331610B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05235421A (en) | 1993-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6563227B1 (en) | Temperature control method for integrated circuit | |
| JP3331610B2 (en) | Superconducting element | |
| Fiegl et al. | Diamond films as thermal conductors and electrical insulators applied to semiconductor power modules | |
| JP3024347B2 (en) | Current limiting element | |
| JPS61240665A (en) | Semiconductor device | |
| JPH0793205B2 (en) | Cryogenic device | |
| US6479882B2 (en) | Current-limiting device | |
| Domingos | Transient temperature rise in silicon semiconductor devices | |
| JP2854900B2 (en) | Semiconductor device | |
| JP2897542B2 (en) | Superconducting switch | |
| JP3052541B2 (en) | Current limiting element | |
| JPS63209185A (en) | Superconducting circuit device | |
| JP3256645B2 (en) | Superconducting thin film element | |
| JPH01101676A (en) | Superconducting transistor | |
| JPS61184859A (en) | Silicon heat sink chip | |
| JPH05250932A (en) | Oxide superconductive current limiting conductor and its manufacture | |
| US3462654A (en) | Electrically insulating-heat conductive mass for semiconductor wafers | |
| Thornburg | The influence of device geometry on instabilities in current-controlled negative resistors | |
| JP2005174985A (en) | Thermoelement | |
| JPH05251755A (en) | Current limiting element | |
| JPH01196157A (en) | Semiconductor device | |
| JPH1187576A (en) | Substrate | |
| JPH0522855A (en) | Current limiting device | |
| JPH11340479A (en) | Two terminal bidirectional thyristor | |
| JP2812372B2 (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070726 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080726 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090726 Year of fee payment: 7 |
|
| LAPS | Cancellation because of no payment of annual fees |