JP3024347B2 - Current limiting element - Google Patents
Current limiting elementInfo
- Publication number
- JP3024347B2 JP3024347B2 JP4046770A JP4677092A JP3024347B2 JP 3024347 B2 JP3024347 B2 JP 3024347B2 JP 4046770 A JP4046770 A JP 4046770A JP 4677092 A JP4677092 A JP 4677092A JP 3024347 B2 JP3024347 B2 JP 3024347B2
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- current
- superconducting film
- temperature
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Description
【０００１】[0001]
【産業上の利用分野】この発明は、短絡電流を限流する
限流素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a current limiting element for limiting a short-circuit current.
【０００２】[0002]
【従来の技術】図１は、例えば特開平２−２８１７６６
号公報に示された限流素子を示す斜視図である。図にお
いて、１は基材で、例えばチタン酸ストロンチウムでつ
くられたセラミック基板が用いられており、２はセラミ
ック基板１の上に形成された超電導膜、４は超電導膜２
の上に形成され、リ−ド線３Ａ、３Ｂに電気的に接続さ
れ、超電導膜２を安定化するための金属膜で、金属膜４
の抵抗値は超電導膜２の常電導抵抗値より小さくなるよ
うに構成されている。2. Description of the Related Art FIG.
FIG. 1 is a perspective view showing a current limiting element disclosed in Japanese Patent Application Laid-Open Publication No. HEI 10-115,036. In the figure, reference numeral 1 denotes a base material, for example, a ceramic substrate made of strontium titanate is used, 2 denotes a superconducting film formed on the ceramic substrate 1 and 4 denotes a superconducting film 2
And a metal film for stabilizing the superconducting film 2 and electrically connected to the lead wires 3A and 3B.
Is configured to be smaller than the normal conduction resistance value of the superconducting film 2.
【０００３】電流はリ−ド線３Ａ、金属膜４、超電導膜
２、金属膜４、リ−ド線３Ｂの経路で流れる。短絡事故
が発生して短絡電流が超電導膜２の臨界電流を越える
と、超電導膜２がクエンチして常電導状態になり超電導
膜２に常電導抵抗が発生し、電流が金属膜４に分流する
が、短絡電流は超電導膜２の常電導抵抗と金属膜４の抵
抗の合成抵抗で限流される。しかしながら、この時点で
は超電導膜２の温度は超電導膜２の臨界温度より低いの
で、短絡電流は僅かしか限流されない。超電導膜２に流
れる電流によるジュ―ル加熱によって超電導膜２の温度
が上昇し、超電導膜２の温度が超電導膜２の臨界温度を
越えると超電導膜２は高い抵抗を発生し、短絡電流が急
激に限流され、その後、超電導膜２が高い抵抗を維持
し、超電導膜２に流れる電流が小さい状態が持続され、
電流波形は図７のようになる。An electric current flows through the path of the lead wire 3A, the metal film 4, the superconducting film 2, the metal film 4, and the lead wire 3B. When a short-circuit accident occurs and the short-circuit current exceeds the critical current of the superconducting film 2, the superconducting film 2 is quenched to be in a normal conducting state, a normal conducting resistance is generated in the superconducting film 2, and the current is diverted to the metal film 4. However, the short-circuit current is limited by the combined resistance of the normal conduction resistance of the superconducting film 2 and the resistance of the metal film 4. However, at this point, since the temperature of superconducting film 2 is lower than the critical temperature of superconducting film 2, short-circuit current is limited only slightly. The temperature of the superconducting film 2 rises due to the Joule heating by the current flowing in the superconducting film 2, and when the temperature of the superconducting film 2 exceeds the critical temperature of the superconducting film 2, the superconducting film 2 generates a high resistance and the short-circuit current increases rapidly. After that, the superconducting film 2 maintains a high resistance, and the state where the current flowing through the superconducting film 2 is small is maintained,
The current waveform is as shown in FIG.
【０００４】[0004]
【発明が解決しようとする課題】従来の限流素子では、
金属膜４の抵抗値が超電導膜２の常電導抵抗値より小さ
くなるように構成されているので、短絡電流が超電導膜
２の臨界電流を越え超電導膜２がクエンチして常電導状
態になった後、超電導膜２に流れる電流が小さい。その
結果、超電導膜２の温度上昇速度が遅く、超電導膜２の
温度が臨界温度に達するまでの時間が長くなり、超電導
膜２が顕著な限流動作を始める時には短絡電流は大きく
なってしまっており、限流波高値が大きくなるという問
題点があった。従って、このような限流素子を半導体等
の分野で用いる場合、半導体の許容値を越え、半導体が
破壊してしまうおそれがあった。In a conventional current limiting element,
Since the resistance value of the metal film 4 is configured to be smaller than the normal conduction resistance value of the superconducting film 2, the short-circuit current exceeds the critical current of the superconducting film 2 and the superconducting film 2 is quenched to be in a normal conducting state. Later, the current flowing through superconducting film 2 is small. As a result, the temperature rising speed of the superconducting film 2 is slow, the time until the temperature of the superconducting film 2 reaches the critical temperature becomes longer, and the short-circuit current increases when the superconducting film 2 starts a remarkable current limiting operation. Therefore, there was a problem that the current limit peak value became large. Therefore, when such a current limiting element is used in the field of semiconductors and the like, the allowable value of the semiconductor may be exceeded and the semiconductor may be broken.
【０００５】この発明は、かかる問題点を解決するため
になされたもので、限流波高値が小さい限流素子を得る
ことを目的とする。[0005] The present invention has been made to solve such a problem, and has as its object to obtain a current limiting element having a small current limiting peak value.
【０００６】[0006]
【課題を解決するための手段】この発明は、超電導体と
この超電導体を安定化するための安定化用金属を備えた
限流素子において、超電導体に流れる電流が超電導体の
臨界電流より大きく、かつ超電導体の温度が超電導体の
臨界温度より低いときには、安定化用金属の抵抗値が超
電導体の抵抗値より大きくなるように構成し、超電導体
に流れる電流が超電導体の臨界電流より大きく、かつ超
電導体の温度が超電導体の臨界温度より高い温度のとき
には、安定化用金属の抵抗値が超電導体の抵抗値より小
さくなるように構成したものである。SUMMARY OF THE INVENTION The present invention relates to a current limiting element having a superconductor and a stabilizing metal for stabilizing the superconductor.
Greater than the critical current and the temperature of the superconductor
When the temperature is lower than the critical temperature, the resistance of the stabilizing metal is configured to be higher than the resistance of the superconductor.
Current flowing through the superconductor is larger than the critical current
When the temperature of the conductor is higher than the critical temperature of the superconductor
Are designed such that the resistance value of the stabilizing metal is smaller than the resistance value of the superconductor.
【０００７】[0007]
【作用】上記のように構成された限流素子では、短絡電
流が超電導体の臨界電流を越え、超電導体がクエンチし
て常電導状態になった後、超電導体が臨界温度に達する
までは、従来の限流素子の場合と比べ超電導体に流れる
電流が大きい。従って、超電導体の温度が急速に上昇
し、超電導体の温度が臨界温度に達するまでの時間が短
くなり、短絡電流が小さい間に、超電導体が限流動作を
始めるので、従来の限流素子と比べ限流波高値が小さく
なる。また、超電導体の超電導転移開始温度（臨界温
度）より高い温度においては従来と同様、安定化用金属
の抵抗値が超電導体の抵抗値より小さくなるように構成
されているので、超電導体の局所的な溶断を起こしにく
くすることができる。In the current limiting element constructed as described above, after the short-circuit current exceeds the critical current of the superconductor, the superconductor is quenched to a normal conducting state, and then the superconductor reaches the critical temperature. The current flowing through the superconductor is larger than that of the conventional current limiting element. Therefore, the temperature of the superconductor rapidly rises, the time until the temperature of the superconductor reaches the critical temperature is shortened, and the superconductor starts current-limiting operation while the short-circuit current is small. The peak current limit value is smaller than that of the current limit. The superconducting transition onset temperature of the superconductor (critical temperature)
At higher temperatures, the resistance value of the stabilizing metal is configured to be smaller than the resistance value of the superconductor as in the related art, so that it is possible to prevent the superconductor from locally fusing.
【０００８】[0008]
【実施例】実施例１． 図１はこの発明の一実施例を示す斜視図であり、１は基
材で、例えばチタン酸ストロンチウムでつくられたセラ
ミック基板が用いられており、２はセラミック基板１の
上に形成された超電導体で、例えばイットリウム系の高
温超電導体であり、この実施例では幅１ｍｍ、厚さ０．
３μｍの超電導膜が用いられている。４は超電導膜２の
上に形成され、リ−ド線３Ａ、３Ｂに電気的に接続さ
れ、超電導膜２を安定化するための金属膜で、例えばア
ルゴン中でグロー放電スパッタ法で形成された銀の膜
（幅１ｍｍ、厚さ１０００オングストローム）であり、
超電導膜の温度が超電導膜の臨界温度より低く、しかも
超電導膜に流れる電流が超電導膜の臨界電流より大きい
条件下で、金属膜の抵抗値が超電導膜の抵抗値より大き
くなるように構成され、超電導膜の超電導転移開始温度
（臨界温度）より高い温度において、金属膜の抵抗値が
超電導膜の抵抗値より小さくなるように構成されてい
る。[Embodiment 1] FIG. 1 is a perspective view showing an embodiment of the present invention. Reference numeral 1 denotes a substrate, which uses a ceramic substrate made of, for example, strontium titanate, and 2 denotes a superconducting substrate formed on a ceramic substrate 1. It is a high-temperature superconductor of, for example, an yttrium-based material. In this embodiment, the width is 1 mm and the thickness is 0.1 mm.
A 3 μm superconducting film is used. Reference numeral 4 denotes a metal film formed on the superconducting film 2 and electrically connected to the lead wires 3A and 3B to stabilize the superconducting film 2, for example, formed by glow discharge sputtering in argon. It is a silver film (width 1 mm, thickness 1000 Å),
Under the condition that the temperature of the superconducting film is lower than the critical temperature of the superconducting film and the current flowing through the superconducting film is larger than the critical current of the superconducting film, the resistance of the metal film is configured to be larger than the resistance of the superconducting film, Superconducting transition onset temperature of superconducting film
At a temperature higher than (critical temperature) , the resistance of the metal film is configured to be smaller than the resistance of the superconducting film.
【０００９】短絡事故が発生して短絡電流が超電導膜２
の臨界電流を越えると、超電導膜２がクエンチして常電
導状態になり超電導膜２に常電導抵抗が発生し、電流が
金属膜４に分流するが、短絡電流は超電導膜２の常電導
抵抗と金属膜４の抵抗の合成抵抗で限流される。しかし
ながら、この時点では超電導膜２の温度は超電導膜２の
臨界温度より低いので、短絡電流は僅かしか限流されな
い。超電導膜２に流れる電流によるジュ―ル加熱によっ
て超電導膜２の温度が上昇し、超電導膜２の温度が超電
導膜２の臨界温度を越えると超電導膜２は高い抵抗を発
生し短絡電流が急激に限流され、その後、超電導膜２が
高い抵抗を維持し超電導膜２に流れる電流が小さい状態
が持続され、電流波形は図２のようになる。[0009] When a short circuit accident occurs, the short circuit current becomes
When the critical current exceeds the critical current, the superconducting film 2 is quenched to be in a normal conducting state, a normal conducting resistance is generated in the superconducting film 2 and the current is shunted to the metal film 4. And the resistance of the metal film 4 is limited by the combined resistance. However, at this point, since the temperature of superconducting film 2 is lower than the critical temperature of superconducting film 2, short-circuit current is limited only slightly. The temperature of the superconducting film 2 rises due to Joule heating by the current flowing in the superconducting film 2, and when the temperature of the superconducting film 2 exceeds the critical temperature of the superconducting film 2, the superconducting film 2 generates a high resistance and the short-circuit current sharply increases. After the current is limited, the state in which the superconducting film 2 maintains a high resistance and the current flowing through the superconducting film 2 is small is maintained, and the current waveform is as shown in FIG.
【００１０】ところで、この発明では、超電導膜の温度
が超電導膜の臨界温度より低く、しかも超電導膜に流れ
る電流が超電導膜の臨界電流より大きい条件下で、金属
膜の抵抗値が超電導膜の抵抗値より大きくなるように構
成されている。従って、短絡電流が超電導膜２の臨界電
流を越え超電導膜２がクエンチして常電導状態になった
後、超電導膜２に流れる電流が大きい。従って、超電導
膜２の温度が急速に上昇し超電導膜２の温度が臨界温度
に達するまでの時間が短くなり、短絡電流が小さい間
に、超電導膜２が限流動作を始めるので、従来の限流素
子と比べ限流波高値が小さくなる。According to the present invention, the resistance value of the metal film is reduced under the condition that the temperature of the superconducting film is lower than the critical temperature of the superconducting film and the current flowing through the superconducting film is larger than the critical current of the superconducting film. It is configured to be larger than the value. Therefore, after the short-circuit current exceeds the critical current of the superconducting film 2 and the superconducting film 2 is quenched to be in a normal conducting state, the current flowing through the superconducting film 2 is large. Therefore, the time until the temperature of the superconducting film 2 rapidly rises and the temperature of the superconducting film 2 reaches the critical temperature is shortened, and while the short-circuit current is small, the superconducting film 2 starts current-limiting operation. The current limiting crest value is smaller than that of the flow element.
【００１１】また、超電導膜の超電導転移開始温度（臨
界温度）より高い温度においては、従来と同様、金属膜
の抵抗値が超電導膜の抵抗値より小さくなるように構成
されているので、超電導膜２に臨界電流、膜質、膜厚な
どの不均一に基ずく局所的な過度温度上昇があっても、
超電導膜２に流れる電流の大半を金属膜に分流できるの
で、超電導膜２の局所的溶断を顕著に起こしにくくする
ことができる。In addition, the superconducting transition onset temperature of the superconducting film (the
At a temperature higher than the ambient temperature, the resistance of the metal film is configured to be smaller than the resistance of the superconducting film, as in the conventional case, so that the superconducting film 2 has non-uniformity such as critical current, film quality, and film thickness. Even if there is a local excessive temperature rise based on
Most of the current flowing through the superconducting film 2 can be diverted to the metal film, so that the local fusing of the superconducting film 2 can be significantly reduced.
【００１２】実施例２．図３はセラミック基板１の両面
に金属膜と超電導膜を形成したものである。図におい
て、１はセラミック基材で、この実施例では例えばチタ
ン酸ストロンチウムでつくられたセラミック基板が用い
られており、２、２Ａはそれぞれ超電導膜、４、４Ａは
それぞれ超電導膜２、２Ａの上に形成された金属膜で、
リ−ド線３Ａ、３Ｂは金属膜４に電気的に接続され、リ
−ド線３Ｃ、３Ｄは金属膜４Ａに電気的に接続されてい
る。電流はリ−ド線３Ａ、金属膜４、超電導膜２、金属
膜４、リ−ド線３Ｂの経路で、また、リ−ド線３Ｃ、金
属膜４Ａ、超電導膜２Ａ、金属膜４Ａ、リ−ド線３Ｄの
経路で流れる。図３に示す実施例では、セラミック基板
１の両面に超電導膜を形成したので、大電流の超電導素
子を得ることができる。Embodiment 2 FIG. FIG. 3 shows a ceramic substrate 1 in which a metal film and a superconducting film are formed on both surfaces. In the drawing, reference numeral 1 denotes a ceramic substrate, and in this embodiment, a ceramic substrate made of, for example, strontium titanate is used. Reference numerals 2 and 2A denote superconducting films, and 4 and 4A denote superconducting films 2 and 2A, respectively. The metal film formed on the
The lead lines 3A and 3B are electrically connected to the metal film 4, and the lead lines 3C and 3D are electrically connected to the metal film 4A. The electric current flows through the paths of the lead wire 3A, the metal film 4, the superconducting film 2, the metal film 4, and the lead wire 3B, and the lead wire 3C, the metal film 4A, the superconducting film 2A, the metal film 4A, -Flows on the path of the line 3D. In the embodiment shown in FIG. 3, since the superconducting films are formed on both surfaces of the ceramic substrate 1, a superconducting element having a large current can be obtained.
【００１３】実施例３．図１と図３の実施例では、セラ
ミック基材として板材を用いたが、セラミック基材とし
ては板材以外のものを使用してもよく、例えば図４に示
すような円柱状のものでもよい。Embodiment 3 FIG. In the embodiments shown in FIGS. 1 and 3, a plate material is used as the ceramic base material. However, a ceramic base material other than a plate material may be used. For example, a columnar material as shown in FIG. 4 may be used.
【００１４】実施例４．以上の実施例では、超電導体と
して超電導膜が用いられているが、図５に示されている
ように線材が用いられてもよい。図５において、２は線
状の超電導体、４はこの超電導体２を安定化するための
安定化用金属で、超電導体２と安定化用金属４で超電導
線が形成されており、３Ａと３Ｂはリ―ド線で超電導線
に電気的に接続されている。Embodiment 4 FIG. In the above embodiment, the superconducting film is used as the superconductor, but a wire may be used as shown in FIG. In FIG. 5, 2 is a linear superconductor, 4 is a stabilizing metal for stabilizing the superconductor 2, and a superconducting wire is formed by the superconductor 2 and the stabilizing metal 4. 3B is a lead wire electrically connected to the superconducting wire.
【００１５】なお、超電導体２と安定化用金属４で構成
された上記超電導線は図６に示されているような螺旋状
に形成されてもよい。The superconducting wire composed of the superconductor 2 and the stabilizing metal 4 may be formed in a spiral shape as shown in FIG.
【００１６】[0016]
【発明の効果】以上のように、この発明によれば超電導
体とこの超電導体を安定化するための安定化用金属を備
えた限流素子において、超電導体に流れる電流が超電導
体の臨界電流より大きく、かつ超電導体の温度が超電導
体の臨界温度より低いときには、安定化用金属の抵抗値
が超電導体の抵抗値より大きくなるように構成し、超電
導体に流れる電流が超電導体の臨界電流より大きく、か
つ超電導体の温度が超電導体の臨界温度より高い温度の
ときには、安定化用金属の抵抗値が超電導体の抵抗値よ
り小さくなるように構成したので、限流波高値が小さい
限流素子が得られる効果がある。As described above, according to the present invention, in a current limiting device including a superconductor and a stabilizing metal for stabilizing the superconductor, the current flowing through the superconductor is superconductive.
The superconductor temperature is higher than the critical current of the body and the superconductor temperature is
When the body below the critical temperature of, configured so that the resistance of the metal-stabilized becomes larger than the resistance value of the superconductor, super conductive
If the current flowing through the conductor is greater than the critical current of the superconductor,
Temperature of the superconductor is higher than the critical temperature of the superconductor.
In some cases, the resistance of the stabilizing metal is configured to be smaller than the resistance of the superconductor, so that there is an effect that a current limiting element having a small current limiting peak value can be obtained.
【図１】従来及びこの発明の実施例１による限流素子を
示す斜視図である。FIG. 1 is a perspective view showing a current limiting element according to a related art and a first embodiment of the present invention.
【図２】この発明の実施例１の限流波形を示す説明図で
ある。FIG. 2 is an explanatory diagram showing a current-limiting waveform according to the first embodiment of the present invention.
【図３】この発明の実施例２による限流素子を示す斜視
図である。FIG. 3 is a perspective view showing a current limiting element according to Embodiment 2 of the present invention.
【図４】この発明の実施例３による限流素子を示す斜視
図である。FIG. 4 is a perspective view showing a current limiting element according to Embodiment 3 of the present invention.
【図５】この発明の実施例４による限流素子を示す斜視
図である。FIG. 5 is a perspective view showing a current limiting element according to Embodiment 4 of the present invention.
【図６】この発明の実施例４による他の限流素子を示す
斜視図である。FIG. 6 is a perspective view showing another current limiting element according to Embodiment 4 of the present invention.
【図７】従来の限流波形を示す説明図である。FIG. 7 is an explanatory diagram showing a conventional current-limiting waveform.
２ 超電導体 ２Ａ 超電導体 ４ 安定化用金属 ４Ａ 安定化用金属 2 Superconductor 2A Superconductor 4 Metal for stabilization 4A Metal for stabilization
フロントページの続き (72)発明者 松野 繁 尼崎市塚口本町８丁目１番１号 三菱電 機株式会社 材料デバイス研究所内 (72)発明者 木ノ内 伸一 尼崎市塚口本町８丁目１番１号 三菱電 機株式会社 材料デバイス研究所内 (56)参考文献 特開 平２−281765（ＪＰ，Ａ) 特開 平２−281766（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 39/16 - 39/16 H01L 39/02 - 39/04 H01L 39/20 H01B 12/06 H02H 9/02 ZAA Continued on the front page (72) Inventor Shigeru Matsuno 8-1-1, Tsukaguchi-Honcho, Amagasaki-shi, Materials and Materials Research Laboratories, Mitsubishi Electric Corporation (72) Inventor Shin-ichi Shinoichi 8-1-1, Tsukaguchi-Honcho, Amagasaki-shi Mitsubishi Electric (56) References JP-A-2-281765 (JP, A) JP-A-2-281766 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 39/16-39/16 H01L 39/02-39/04 H01L 39/20 H01B 12/06 H02H 9/02 ZAA
Claims (1)
れ、上記超電導体を安定化する安定化用金属を備えた限
流素子において、上記超電導体に流れる電流が上記超電
導体の臨界電流より大きく、かつ上記超電導体の温度が
上記超電導体の臨界温度より低いときには、上記安定化
用金属の抵抗値が上記超電導体の抵抗値より大きくなる
ように構成するとともに、上記超電導体に流れる電流が
上記超電導体の臨界電流より大きく、かつ上記超電導体
の温度が上記超電導体の臨界温度より高い温度のときに
は、上記安定化用金属の抵抗値が上記超電導体の抵抗値
より小さくなるように構成したことを特徴とする限流素
子。1. A current limiting element provided with a superconductor and a stabilizing metal provided on the superconductor and for stabilizing the superconductor, wherein a current flowing through the superconductor is controlled by the superconductor.
Greater than the critical current of the conductor and the temperature of the superconductor
When the temperature is lower than the critical temperature of the superconductor, the resistance of the stabilizing metal is configured to be larger than the resistance of the superconductor, and the current flowing through the superconductor is reduced.
Greater than the critical current of the superconductor, and the superconductor
Temperature is higher than the critical temperature of the superconductor
Is a current limiting element characterized in that a resistance value of the stabilizing metal is smaller than a resistance value of the superconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4046770A JP3024347B2 (en) | 1992-03-04 | 1992-03-04 | Current limiting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4046770A JP3024347B2 (en) | 1992-03-04 | 1992-03-04 | Current limiting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05251756A JPH05251756A (en) | 1993-09-28 |
| JP3024347B2 true JP3024347B2 (en) | 2000-03-21 |
Family
ID=12756568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4046770A Expired - Fee Related JP3024347B2 (en) | 1992-03-04 | 1992-03-04 | Current limiting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3024347B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100722317B1 (en) * | 2005-10-28 | 2007-05-28 | 한국전력공사 | A superconductivity current limiting device based on superconductor and non-linear conductor composite system |
| US11031774B2 (en) * | 2018-01-19 | 2021-06-08 | Varian Semiconductor Equipment Associates, Inc. | Superconducting fault current limiter having improved energy handling |
| CN109513419B (en) * | 2018-11-08 | 2021-09-21 | 华南理工大学 | Magnetic magnesium-manganese layered double-metal oxide composite material and preparation and application thereof |
-
1992
- 1992-03-04 JP JP4046770A patent/JP3024347B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05251756A (en) | 1993-09-28 |
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