JPH05243627A - Josephson device and manufacture thereof - Google Patents

Josephson device and manufacture thereof

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Publication number
JPH05243627A
JPH05243627A JP3081181A JP8118191A JPH05243627A JP H05243627 A JPH05243627 A JP H05243627A JP 3081181 A JP3081181 A JP 3081181A JP 8118191 A JP8118191 A JP 8118191A JP H05243627 A JPH05243627 A JP H05243627A
Authority
JP
Japan
Prior art keywords
film
forming
junction
superconducting
pillar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3081181A
Other languages
Japanese (ja)
Other versions
JP2674347B2 (en
Inventor
Chiyoushin Sai
兆申 蔡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3081181A priority Critical patent/JP2674347B2/en
Publication of JPH05243627A publication Critical patent/JPH05243627A/en
Application granted granted Critical
Publication of JP2674347B2 publication Critical patent/JP2674347B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To provide a Josephson device, which can be manufactured without lifting off a resist stencil, by joining two superconducting films with an insulating film between on a junction-forming post. CONSTITUTION:A substrate 1 is provided with a groove 7 and a junction-forming post 8. The groove 7 has a depth of t1 and a width of 11, while the post 8 has a height of t1, a width of 12 and a length of w, where 11<12. A first superconducting film 2, an insulating film 41 and a second superconducting film 3 are formed by deposition at angles shown by arrowheads 1', 2' and 3', respectively. When the angles 1' and 2' satisfy a given relation, the first and second superconducting films are joined with the insulating film 41 between only in the post 8, thus forming an SIS junction 51. Therefore, a Josephson device with a very small junction area is provided without the need for lithography, including a lift-off step, after the film forming and junction forming.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】本発明はジョセフソン素子及びその製造方
法に関する。
The present invention relates to a Josephson device and its manufacturing method.

【0002】[0002]

【従来の技術】微小なジョセフソン接合を作るにはリソ
グラフィの技術が不可欠である。この接合形成のリソグ
ラフィを最も簡易化したものに図9,図10で示すサン
ペンデッドレジストステンシル法(SPS法)がある。
この方法によれば、まず図9に示すように、部分的に中
空に浮いたステンシルマスク6を準備する。その後、図
10(これは図9のA−A′断面である。)のように基
板1上に第1,第2の超伝導膜2,3及び常伝導膜42
をそれぞれ矢印,,の方向より成膜することによ
り、SNS接合52を作ることができる。また同じよう
な方法により、SIS接合なども作ることができる。
2. Description of the Related Art Lithography technology is indispensable for producing minute Josephson junctions. The most simplified method for forming the junction is the sampled resist stencil method (SPS method) shown in FIGS.
According to this method, first, as shown in FIG. 9, a stencil mask 6 which is partially hollow is prepared. Thereafter, as shown in FIG. 10 (this is a cross section taken along the line AA ′ in FIG. 9), the first and second superconducting films 2 and 3 and the normal conducting film 42 are formed on the substrate 1.
The SNS junction 52 can be formed by forming the films in the directions of arrows and. Also, SIS bonding or the like can be made by the same method.

【0003】[0003]

【発明が解決しようとする課題】このような成膜角度に
よりセルフアライメントの度合いを調整する方法は、非
常に簡便ではあるが、中空に浮いたレジストステンシル
を作るために通常3層のレジスト加工技術を必要とす
る。またレジストステンシルのリフトオフを必要とする
ので、有機溶剤や水分により劣化しやすい鉛系合金や酸
化物超伝導の接合には向いていない。また酸化物超伝導
体成膜時の高温環境により、通常の有機レジストステン
シルはすべて基板に焼きついてしまうので、このような
材料を電極にすることは、この方法では無理である。
Although the method of adjusting the degree of self-alignment by the film-forming angle is very simple, it is usually a three-layer resist processing technique for forming a hollow resist stencil. Need. Moreover, since lift-off of the resist stencil is required, it is not suitable for joining lead-based alloys and oxide superconductors, which are easily deteriorated by organic solvents and water. Further, since all the ordinary organic resist stencils are burned on the substrate due to the high temperature environment during the film formation of the oxide superconductor, it is impossible to use such a material as an electrode by this method.

【0004】本発明の目的は、このような問題点を解決
したジョセフソン素子及びその製造方法を提供すること
にある。
An object of the present invention is to provide a Josephson device and a method of manufacturing the same that solve the above problems.

【0005】[0005]

【課題を解決するための手段】本発明のジョセフソン素
子は、基板上に作られた溝の中に接合形成柱を設け、そ
の上に成膜された第1及び第2の超伝導膜が、前記接合
形成柱において絶縁膜を介して結合していることを特徴
とする。
According to the Josephson element of the present invention, a junction forming pillar is provided in a groove formed on a substrate, and the first and second superconducting films formed on the junction forming pillar are The bonding columns are joined together via an insulating film.

【0006】また本発明によれば、第1及び第2の超伝
導膜を常伝導膜を介して結合させることもできる。
Further, according to the present invention, the first and second superconducting films can be joined together via the normal conducting film.

【0007】さらに本発明によれば、第1及び第2の超
伝導膜を結晶粒界を介して結合させることもできる。
Further, according to the present invention, the first and second superconducting films can be bonded together through the grain boundaries.

【0008】本発明のジョセフソン素子の製造方法は、
溝及び接合形成柱を備えた基板に、第1の超伝導膜を、
前記溝の部分で不連続に、かつ前記接合形成柱の部分で
はその上部に成膜されるような成膜角度をもって成膜
し、次に第2の超伝導膜を前記溝の部分で不連続に、か
つ前記接合形成柱の部分において前記第1の超伝導膜と
重なって成膜されるような成膜角度を持って成膜するこ
とを特徴とする。
The method of manufacturing the Josephson device of the present invention is as follows.
A first superconducting film is provided on a substrate having grooves and junction forming columns.
A film is formed discontinuously at the groove portion and at a film forming angle so as to be formed on the bonding formation column upper portion, and then a second superconducting film is formed discontinuously at the groove portion. In addition, the film is formed at a film forming angle such that the film is formed so as to overlap with the first superconducting film in the portion of the bonding formation pillar.

【0009】また本発明によれば、前記第1の超伝導膜
成膜後に、絶縁膜を前記接合形成柱上に成膜する。
Further, according to the present invention, after forming the first superconducting film, an insulating film is formed on the junction forming pillar.

【0010】また本発明によれば、前記第1の超伝導膜
成膜後に、常伝導膜を前記接合形成柱上に成膜できる成
膜角度を持って成膜する。
Further, according to the present invention, after forming the first superconducting film, a normal conducting film is formed with a film forming angle capable of forming a film on the junction forming pillar.

【0011】[0011]

【作用】本発明の作用をまず図5及び図6を参照して説
明する。なお、図5は基板1に作られた溝7(深さ
1,幅l1)における断面図、図6はその溝上に作られ
た接合形成柱8(高さt2,幅l2,l2>l1)における
断面図である。
The operation of the present invention will be described first with reference to FIGS. 5 is a cross-sectional view of the groove 7 (depth t 1 , width l 1 ) formed in the substrate 1, and FIG. 6 is a junction forming column 8 (height t 2 , width l 2 , it is a cross-sectional view of l 2> l 1).

【0012】図5(a)及び図6(a)に示すように、
溝7及び接合形成柱8に、まずθ1の成膜角度をもって
第1の超伝導膜2を成膜する。
As shown in FIGS. 5 (a) and 6 (a),
First, the first superconducting film 2 is formed on the groove 7 and the junction forming pillar 8 at a film forming angle of θ 1 .

【0013】次に、図5(b)及び図6(b)に示すよ
うに、基板に対しほぼ垂直に接合膜4を成膜する。
Next, as shown in FIGS. 5B and 6B, the bonding film 4 is formed substantially perpendicular to the substrate.

【0014】次に、図5(c)及び図6(c)に示すよ
うに、θ2の成膜角度を持って第2の超伝導膜3を成膜
する。もしθ1=θ2=θという対象的な系を考えた場
合、
Next, as shown in FIGS. 5C and 6C, the second superconducting film 3 is formed with a film forming angle of θ 2 . If we consider a symmetric system where θ 1 = θ 2 = θ,

【数1】[Equation 1]

【0015】 [0015]

【0016】という条件を満たすθを持って成膜する
と、溝7の部分では第1及び第2の超伝導膜2,3は不
連続で、かつ接合形成柱8において接合膜4を介して第
1及び第2の超伝導膜2,3がジョセフソン結合してい
る素子が得られる。ジョセフソン接合を5で示す。幅l
2を持つ接合形成柱8の面積を規定することにより接合
面積を制御することができる。接合膜4が絶縁体であれ
ばSIS接合、常伝導体であればSNS接合を作ること
ができる。
When the film is formed with θ satisfying the condition of: A device in which the first and second superconducting films 2 and 3 are Josephson-coupled is obtained. The Josephson junction is shown at 5. Width l
The joint area can be controlled by defining the area of the joint forming column 8 having 2 . If the bonding film 4 is an insulator, SIS bonding can be made, and if it is a normal conductor, SNS bonding can be made.

【0017】図7及び図8に、接合膜の成膜を省略する
場合を示す。図7,図8は、ほぼ図5,図6に同じであ
るが、コヒーレンス長の短い酸化物超伝導体などでは、
このような構造においても結晶界面を介してジョセフソ
ン素子を形成できる。
7 and 8 show the case where the formation of the bonding film is omitted. 7 and 8 are almost the same as FIGS. 5 and 6, but in the case of an oxide superconductor having a short coherence length,
Even in such a structure, the Josephson device can be formed through the crystal interface.

【0018】[0018]

【実施例】以下に本発明の実施例を示す。 (実施例1)図1,図2は本発明の第1の実施例を示す
斜視図である。図1は基板1の斜視図、図2は基板1に
ジョセフソン接合が形成された状態を示す斜視図であ
る。以下、本実施例のジョセフソン接合の製造方法を説
明する。
EXAMPLES Examples of the present invention will be shown below. (Embodiment 1) FIGS. 1 and 2 are perspective views showing a first embodiment of the present invention. 1 is a perspective view of the substrate 1, and FIG. 2 is a perspective view showing a state in which a Josephson junction is formed on the substrate 1. Hereinafter, a method for manufacturing the Josephson junction of this embodiment will be described.

【0019】まず図1に示すように、溝7及び接合形成
柱8を有する基板1を準備する。溝7は深さt1,幅l1
を有し、接合形成柱8は高さt2,幅l2,長さwを有す
るものとし、l1≦l2とする。
First, as shown in FIG. 1, a substrate 1 having a groove 7 and a junction forming pillar 8 is prepared. The groove 7 has a depth t 1 and a width l 1
And the joint forming column 8 has a height t 2 , a width l 2 and a length w, and l 1 ≦ l 2 .

【0020】次に図2に示すように、矢印,,で
示された成膜角度によりそれぞれ第1の超伝導膜2,絶
縁膜41,第2の超伝導膜3を成膜する。もしとで
示す成膜の角度が数1を満足していれば、第1及び第2
の超伝導膜2,3は接合形成柱8上でのみ絶縁膜41を
介して結合し、SIS接合51を形成する。また絶縁膜
41は上述のような成膜をせずとも、例えば表面熱酸化
膜を利用するなどの手段によっても作ることができる。 (実施例2)図3は本発明の第2の実施例を示す斜視図
である。本実施例の構成及び製造方法はほぼ第1の実施
例と同じである。相違点としては図2の絶縁膜41に代
って本実施例では常伝導膜42が矢印の方向より成膜
される。したがって近接効果により結合されるSNS接
合52のジョセフソン素子が得られる。 (実施例3)図4は本発明の第3の実施例を示す斜視図
である。本実施例の構成及び製造方法はほぼ第1の実施
例と同じである。相違点としては図2で絶縁膜41を成
膜しているが、これを本実施例では省略している。つま
り第1の超伝導膜2と第2の超伝導膜3が直接に接触し
ている。第1及び第2の超伝導膜を例えば酸化物高温超
伝導体にすると、第1及び第2の超伝導膜の接触部に結
晶粒界を生じ、この結晶粒界を介して粒界接合53のジ
ョセフソン素子ができる。
Next, as shown in FIG. 2, the first superconducting film 2, the insulating film 41, and the second superconducting film 3 are formed at the film forming angles indicated by arrows and. If the film forming angles indicated by and satisfy the expression 1, the first and second
The superconducting films 2 and 3 are bonded to each other only through the insulating film 41 on the junction forming pillar 8 to form the SIS junction 51. Further, the insulating film 41 can be formed by a means such as utilizing a surface thermal oxide film without forming the above-mentioned film. (Embodiment 2) FIG. 3 is a perspective view showing a second embodiment of the present invention. The structure and manufacturing method of this embodiment are almost the same as those of the first embodiment. The difference is that instead of the insulating film 41 of FIG. 2, a normal conductive film 42 is formed in the direction of the arrow in this embodiment. Therefore, the Josephson device of the SNS junction 52 coupled by the proximity effect is obtained. (Embodiment 3) FIG. 4 is a perspective view showing a third embodiment of the present invention. The structure and manufacturing method of this embodiment are almost the same as those of the first embodiment. The difference is that the insulating film 41 is formed in FIG. 2, but this is omitted in this embodiment. That is, the first superconducting film 2 and the second superconducting film 3 are in direct contact with each other. When the first and second superconducting films are made of, for example, an oxide high-temperature superconductor, a grain boundary is generated at the contact portion between the first and second superconducting films, and the grain boundary junction 53 is formed through the grain boundary. You can make a Josephson device.

【0021】[0021]

【発明の効果】以上説明したように本発明によれば、成
膜後及び接合形成後のリフトオフ工程を含む一切のリソ
グラフィ工程を必要としない、微細な接合面積のジョセ
フソン素子を得ることができる効果を有する。
As described above, according to the present invention, it is possible to obtain a Josephson device having a fine junction area which does not require any lithography process including a lift-off process after film formation and after junction formation. Have an effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】溝及び接合形成柱が設けられた基板の斜視図で
ある。
FIG. 1 is a perspective view of a substrate provided with a groove and a bonding formation pillar.

【図2】本発明の第1の実施例を示す斜視図である。FIG. 2 is a perspective view showing a first embodiment of the present invention.

【図3】本発明の第2の実施例を示す斜視図である。FIG. 3 is a perspective view showing a second embodiment of the present invention.

【図4】本発明の第3の実施例を示す斜視図である。FIG. 4 is a perspective view showing a third embodiment of the present invention.

【図5】本発明の作用を説明するための図である。FIG. 5 is a diagram for explaining the operation of the present invention.

【図6】本発明の作用を説明するための図である。FIG. 6 is a diagram for explaining the operation of the present invention.

【図7】本発明の作用を説明するための図である。FIG. 7 is a diagram for explaining the operation of the present invention.

【図8】本発明の作用を説明するための図である。FIG. 8 is a diagram for explaining the operation of the present invention.

【図9】従来の製造方法を示す略図である。FIG. 9 is a schematic view showing a conventional manufacturing method.

【図10】従来の製造方法を示す略図である。FIG. 10 is a schematic view showing a conventional manufacturing method.

【符号の説明】[Explanation of symbols]

1 基板 2 第1の超伝導膜 3 第2の超伝導膜 4 接合膜 5 ジョセフソン接合 6 ステンシルマスク 7 溝 8 接合形成溝 41 絶縁膜 42 常伝導膜 51 SIS接合 52 SNS接合 53 粒界接合 1 Substrate 2 First Superconducting Film 3 Second Superconducting Film 4 Bonding Film 5 Josephson Junction 6 Stencil Mask 7 Groove 8 Bonding Groove 41 Insulating Film 42 Normal Conductive Film 51 SIS Bonding 52 SNS Bonding 53 Grain Boundary Bonding

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】基板上に作られた溝の中に接合形成柱を設
け、その上に成膜された第1及び第2の超伝導膜が、前
記接合形成柱において絶縁膜を介して結合しているジョ
セフソン素子。
1. A junction formation pillar is provided in a groove formed on a substrate, and first and second superconducting films formed on the junction formation pillar are bonded via an insulating film in the junction formation pillar. Josephson device doing.
【請求項2】基板上に作られた溝の中に接合形成柱を設
け、その上に成膜された第1及び第2の超伝導膜が、前
記接合形成柱において常伝導膜を介して結合しているジ
ョセフソン素子。
2. A junction forming column is provided in a groove formed on a substrate, and the first and second superconducting films formed on the junction forming column are formed on the junction forming column via a normal conductive film. Josephson device coupled.
【請求項3】基板上に作られた溝の中に接合形成柱を設
け、その上に成膜された第1及び第2の超伝導膜が、前
記接合形成柱において結晶粒界を介して結合しているジ
ョセフソン素子。
3. A junction forming pillar is provided in a groove formed on a substrate, and the first and second superconducting films formed on the junction forming pillar are formed on the joining forming pillar via a grain boundary. Josephson device coupled.
【請求項4】溝及び接合形成柱を備えた基板に、第1の
超伝導膜を、前記溝の部分で不連続に、かつ前記接合形
成柱の部分ではその上部に成膜されるような成膜角度を
もって成膜し、次に第2の超伝導膜を前記溝の部分で不
連続に、かつ前記接合形成柱の部分において前記第1の
超伝導膜と重なって成膜されるような成膜角度を持って
成膜するジョセフソン素子の製造方法。
4. A first superconducting film is formed on a substrate provided with a groove and a junction forming pillar, discontinuously at the groove portion and above the junction forming pillar portion. A second superconducting film is formed at a film forming angle, and then a second superconducting film is formed discontinuously at the groove portion and overlapping the first superconducting film at the junction forming pillar portion. A method of manufacturing a Josephson device in which a film is formed at an angle.
【請求項5】前記第1の超伝導膜成膜後に、絶縁膜を前
記接合形成柱上に成膜する請求項4記載のジョセフソン
接合の製造方法。
5. The method of manufacturing a Josephson junction according to claim 4, wherein after forming the first superconducting film, an insulating film is formed on the junction forming pillar.
【請求項6】前記第1の超伝導膜成膜後に、常伝導膜を
前記接合形成柱上に成膜できる成膜角度を持って成膜す
る請求項4記載のジョセフソン素子の製造方法。
6. The method for manufacturing a Josephson device according to claim 4, wherein after forming the first superconducting film, a normal conducting film is formed with a film forming angle capable of forming a film on the junction forming pillar.
JP3081181A 1991-03-22 1991-03-22 Josephson device and manufacturing method thereof Expired - Fee Related JP2674347B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3081181A JP2674347B2 (en) 1991-03-22 1991-03-22 Josephson device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3081181A JP2674347B2 (en) 1991-03-22 1991-03-22 Josephson device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH05243627A true JPH05243627A (en) 1993-09-21
JP2674347B2 JP2674347B2 (en) 1997-11-12

Family

ID=13739302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3081181A Expired - Fee Related JP2674347B2 (en) 1991-03-22 1991-03-22 Josephson device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2674347B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109180A (en) * 2003-09-30 2005-04-21 National Institute Of Advanced Industrial & Technology Thin film forming component and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109180A (en) * 2003-09-30 2005-04-21 National Institute Of Advanced Industrial & Technology Thin film forming component and manufacturing method thereof
JP4586161B2 (en) * 2003-09-30 2010-11-24 独立行政法人産業技術総合研究所 Thin film forming component and manufacturing method thereof

Also Published As

Publication number Publication date
JP2674347B2 (en) 1997-11-12

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