JPH05243168A - Substrate temperature control device - Google Patents
Substrate temperature control deviceInfo
- Publication number
- JPH05243168A JPH05243168A JP7639992A JP7639992A JPH05243168A JP H05243168 A JPH05243168 A JP H05243168A JP 7639992 A JP7639992 A JP 7639992A JP 7639992 A JP7639992 A JP 7639992A JP H05243168 A JPH05243168 A JP H05243168A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- container
- case
- heater
- control device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、真空中で基板上に薄
膜を形成する装置における基板の温度制御に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to substrate temperature control in an apparatus for forming a thin film on a substrate in vacuum.
【0002】[0002]
【従来の技術】図2は例えば公開技報91−17446
に示された従来の基板を加熱、冷却する装置を示す断面
図であり、図において、1は真空槽、2は基板、3は基
板ホルダー、4は支柱、5は回転体、6は軸受、8はベ
ローズ、12はクラッチ機構を有するジョイント、13
はモーター、15は支柱、18は空圧シリンダー、19
はモーター取付台、20は基板加熱ヒーター、42は絶
縁体、44はスラスト軸受機能を有するリング、45は
プーリ、46はベルト、47はプーリ、48は大気圧と
真空を隔絶して回転力を伝達する回転導入機構、49は
絶縁筒、50は容器、51はピン、52はチューブであ
る。2. Description of the Related Art FIG. 2 shows, for example, Open Technical Report 91-17446.
FIG. 5 is a cross-sectional view showing a conventional apparatus for heating and cooling the substrate shown in FIG. 1, in which 1 is a vacuum chamber, 2 is a substrate, 3 is a substrate holder, 4 is a support column, 5 is a rotating body, 6 is a bearing, 8 is a bellows, 12 is a joint having a clutch mechanism, 13
Is a motor, 15 is a column, 18 is a pneumatic cylinder, 19
Is a motor mount, 20 is a substrate heater, 42 is an insulator, 44 is a ring having a thrust bearing function, 45 is a pulley, 46 is a belt, 47 is a pulley, and 48 is a rotational force that isolates atmospheric pressure and vacuum from each other. A rotation introducing mechanism for transmitting, 49 is an insulating cylinder, 50 is a container, 51 is a pin, and 52 is a tube.
【0003】次に動作について説明する。基板2を冷却
するための冷却体即ち冷媒は、チューブ52を介して容
器50へ導かれ、基板2の裏面に接触するようになって
いる。基板2は基板ホルダー3により保持され、ホルダ
ー3を支持する支柱4は、内径に軸受6をかつ外径に歯
車を有する回転体5により保持される。そして図示しな
いモーターにより発生された回転力は、クラッチ機構を
有するジョイント12、プーリ45、ベルト46、プー
リ47、大気圧と真空を隔絶して回転力を伝達する回転
導入機構48、絶縁筒49、容器50、ピン51、基板
ホルダー3を介して伝達され、基板2を回転させる。又
基板2のロードロック動作は、空圧シリンダー18によ
り行なわれ、その運動が支柱15、スラスト軸受機能を
有するリング44、軸受6、回転体5、絶縁体42、支
柱4、基板ホルダー3を介して伝達され、基板2を上下
に移動させる。基板2が上方に移動した時、基板裏面が
容器50に接触し、そこで、熱伝達を介してチューブ5
2に注入した冷媒により冷却され、図示しない真空容器
内の温度より低い温度に制御される。なお上記の真空容
器内の温度より高い温度で基板2に薄膜を蒸着させる時
は、従来同様に基板加熱ヒーター20により加熱し、温
度を制御する。Next, the operation will be described. A cooling body, that is, a cooling medium for cooling the substrate 2 is introduced into the container 50 through the tube 52 and comes into contact with the back surface of the substrate 2. The substrate 2 is held by the substrate holder 3, and the support column 4 supporting the holder 3 is held by the rotating body 5 having the bearing 6 on the inner diameter and the gear on the outer diameter. The rotational force generated by a motor (not shown) includes a joint 12 having a clutch mechanism, a pulley 45, a belt 46, a pulley 47, a rotation introducing mechanism 48 that isolates atmospheric pressure from vacuum and transmits the rotational force, an insulating cylinder 49, It is transmitted through the container 50, the pin 51, and the substrate holder 3 to rotate the substrate 2. The load lock operation of the substrate 2 is performed by the pneumatic cylinder 18, and its movement is performed via the support column 15, the ring 44 having the thrust bearing function, the bearing 6, the rotating body 5, the insulator 42, the support column 4, and the substrate holder 3. Is transmitted to move the substrate 2 up and down. When the substrate 2 moves upward, the backside of the substrate contacts the container 50, where the tube 5 is transferred via heat transfer.
It is cooled by the refrigerant injected into the chamber 2 and controlled to a temperature lower than the temperature in the vacuum container (not shown). When depositing a thin film on the substrate 2 at a temperature higher than the temperature in the vacuum container, heating is performed by the substrate heating heater 20 and the temperature is controlled as in the conventional case.
【0004】[0004]
【発明が解決しようとする課題】従来の基板温度制御装
置は以上のように構成されており、基板2と基板加熱ヒ
ーター20との間に容器50が介在しているので、基板
を加熱する場合、間接的に基板を加熱することになり、
基板の加熱に時間がかかるという問題点があった。The conventional substrate temperature control device is configured as described above, and since the container 50 is interposed between the substrate 2 and the substrate heating heater 20, when the substrate is heated. , Indirectly heating the substrate,
There is a problem that it takes time to heat the substrate.
【0005】この発明は上記のような問題点を解消する
ためになされたもので、基板をすみやかに加熱し、冷却
できる基板温度制御装置を得ることを目的とする。The present invention has been made to solve the above problems, and an object thereof is to obtain a substrate temperature control device capable of quickly heating and cooling a substrate.
【0006】[0006]
【課題を解決するための手段】この発明に係る基板温度
制御装置は、基板に接触して基板を裏側から冷却するた
めの冷媒収容容器の、基板に近接した位置に加熱ヒータ
ー線(抵抗発熱体)を配置したものである。SUMMARY OF THE INVENTION A substrate temperature control device according to the present invention includes a heater heater wire (a resistance heating element) at a position close to a substrate in a coolant container for contacting the substrate to cool the substrate from the back side. ) Is arranged.
【0007】[0007]
【作用】この発明における基板温度制御装置は、加熱ヒ
ーターが、容器と基板の間にあり、加熱ヒーターで発生
した熱量が、熱伝導で直接基板へ伝達する。In the substrate temperature control device according to the present invention, the heater is provided between the container and the substrate, and the amount of heat generated by the heater is directly transferred to the substrate by heat conduction.
【0008】[0008]
実施例1.以下、この発明の一実施例を図について説明
する。図1において、1は真空槽、2は基板、3は基板
ホルダー、4は支柱、7は基板上に形成された薄膜であ
る。9は薄膜材料の原子またはクラスター、あるいはイ
オンまたはクラスターイオン、10は上記物質9を発生
する蒸発源、11は支柱4を支える支持板、14は大気
圧と真空を隔絶して中心軸を上下移動させる上下機構、
21は冷媒(液体窒素)を収容する中空密閉容器、21
a,21bは冷媒の入口と出口、22はこの容器の下部
にらせんに埋め込まれかつ容器側周に巻き付けられた加
熱ヒーター(抵抗発熱体)、23は容器21の下部に配
置された円板、24はこの円板内に埋め込まれた熱電対
線、25はこの熱電対線24の起電力を温度に換算して
所定温度に一定に保つように電源26の出力を制御する
制御器である。なお矢印Aは真空排気装置へ接続され
る。Example 1. An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, 1 is a vacuum chamber, 2 is a substrate, 3 is a substrate holder, 4 is a column, and 7 is a thin film formed on the substrate. Reference numeral 9 is an atom or cluster of thin film material, or ion or cluster ion, 10 is an evaporation source that generates the substance 9, 11 is a support plate that supports the column 4, 14 is a vertical axis that separates atmospheric pressure from vacuum and moves up and down the central axis. Up and down mechanism,
21 is a hollow closed container for containing a refrigerant (liquid nitrogen), 21
a and 21b are inlets and outlets of the refrigerant, 22 is a heater (resistive heating element) embedded in the lower part of the container in a spiral and wound around the periphery of the container, 23 is a disk arranged at the lower part of the container 21, Reference numeral 24 is a thermocouple wire embedded in the disc, and 25 is a controller for controlling the output of the power supply 26 so that the electromotive force of the thermocouple wire 24 is converted into temperature and kept constant at a predetermined temperature. The arrow A is connected to the vacuum exhaust device.
【0009】次にその動作について説明する。基板ホル
ダー3にのせた基板2は、上下機構14の上方向の移動
によって、支持板11、支柱4を介して容器21に押し
当てられる。この容器21には、電源26によって発熱
する抵抗発熱体22が巻き付けられていて、基板2を熱
伝導で加熱する。このとき、基板2に近接した容器一部
に取付けられた熱電対線24で温度を測定し、制御器2
5によって一定温度になるように電源26の出力を制御
する。一方、基板2を冷却する場合には、容器21に冷
媒を循環させるものである。Next, the operation will be described. The substrate 2 placed on the substrate holder 3 is pressed against the container 21 via the support plate 11 and the support 4 by the upward movement of the vertical mechanism 14. A resistance heating element 22 which is heated by a power source 26 is wound around the container 21 to heat the substrate 2 by heat conduction. At this time, the temperature is measured by the thermocouple wire 24 attached to a part of the container close to the substrate 2, and the controller 2
5, the output of the power supply 26 is controlled so that the temperature becomes constant. On the other hand, when the substrate 2 is cooled, the refrigerant is circulated in the container 21.
【0010】[0010]
【発明の効果】以上のようにこの発明によれば、冷媒を
収容する容器の、基板と近接した位置に加熱ヒーターを
配置して基板に接触させるように構成したので、基板を
すみやかに加熱したり、冷却したりすることができる。As described above, according to the present invention, since the heater is arranged in the container for accommodating the refrigerant so as to be in contact with the substrate, the heater is quickly heated. It can be cooled or cooled.
【図面の簡単な説明】[Brief description of drawings]
【図1】この発明の一実施例による基板温度制御装置を
示す断面側面図である。FIG. 1 is a sectional side view showing a substrate temperature control device according to an embodiment of the present invention.
【図2】従来の基板温度制御装置を示す断面側面図であ
る。FIG. 2 is a cross-sectional side view showing a conventional substrate temperature control device.
1 真空槽 2 基板 3 基板ホルダー 4 支柱 14 上下機構 21 容器 22 抵抗発熱体 23 円板 24 熱電対線 25 制御器 26 電源 1 Vacuum Tank 2 Substrate 3 Substrate Holder 4 Support 14 Vertical Mechanism 21 Container 22 Resistance Heating Element 23 Disc 24 Thermocouple Wire 25 Controller 26 Power Supply
Claims (1)
のある中空密閉容器と、この容器の底部に配置された加
熱ヒーター及び熱電対線と、基板を保持するホルダーを
上下動させ基板を上記容器に下方から接離させる上下機
構と、上記熱電対線からの熱起電力をとり入れて所定温
度になるように上記加熱ヒーターの電源の出力電力を制
御する制御装置を備えた基板温度制御装置。1. A hollow airtight container having a refrigerant inlet / outlet and airtight in a high vacuum, a heater and a thermocouple wire arranged at the bottom of the container, and a holder for holding a substrate are vertically moved. Substrate temperature including an up-and-down mechanism for bringing the substrate into and out of the container from below, and a control device for taking in the thermoelectromotive force from the thermocouple wire and controlling the output power of the power source of the heating heater to reach a predetermined temperature Control device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7639992A JP2783935B2 (en) | 1992-02-26 | 1992-02-26 | Substrate temperature controller |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7639992A JP2783935B2 (en) | 1992-02-26 | 1992-02-26 | Substrate temperature controller |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05243168A true JPH05243168A (en) | 1993-09-21 |
JP2783935B2 JP2783935B2 (en) | 1998-08-06 |
Family
ID=13604213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7639992A Expired - Lifetime JP2783935B2 (en) | 1992-02-26 | 1992-02-26 | Substrate temperature controller |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2783935B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001249620A (en) * | 2000-03-02 | 2001-09-14 | Showa Mfg Co Ltd | Multistage infrared cooling furnace for flat panel display |
CN111623887A (en) * | 2020-06-05 | 2020-09-04 | 亿方人工智能系统(深圳)有限公司 | Human body infrared temperature measurement superconducting heat pipe surface source blackbody calibration source system |
-
1992
- 1992-02-26 JP JP7639992A patent/JP2783935B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001249620A (en) * | 2000-03-02 | 2001-09-14 | Showa Mfg Co Ltd | Multistage infrared cooling furnace for flat panel display |
CN111623887A (en) * | 2020-06-05 | 2020-09-04 | 亿方人工智能系统(深圳)有限公司 | Human body infrared temperature measurement superconducting heat pipe surface source blackbody calibration source system |
CN111623887B (en) * | 2020-06-05 | 2022-06-24 | 亿方人工智能系统(深圳)有限公司 | Human body infrared temperature measurement superconducting heat pipe surface source blackbody calibration source system |
Also Published As
Publication number | Publication date |
---|---|
JP2783935B2 (en) | 1998-08-06 |
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