JPH05238774A - Glass composition for low temperature sintered base plate and base plate obtained therefrom - Google Patents
Glass composition for low temperature sintered base plate and base plate obtained therefromInfo
- Publication number
- JPH05238774A JPH05238774A JP7233792A JP7233792A JPH05238774A JP H05238774 A JPH05238774 A JP H05238774A JP 7233792 A JP7233792 A JP 7233792A JP 7233792 A JP7233792 A JP 7233792A JP H05238774 A JPH05238774 A JP H05238774A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- base plate
- low temperature
- cordierite
- mullite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、容易に生産でき、ガラ
ス熱処理後主結晶相としてムライトとコ―ジェライトを
析出することにより優れた機械的強度、電気絶縁性、低
熱膨張率、低誘電率等を有し、主として半導体素子のパ
ッケ―ジングやアセンブリ―等に最適な低温焼成多層基
板用のガラス組成物に関する。INDUSTRIAL APPLICABILITY The present invention can be easily produced and has excellent mechanical strength, electrical insulation, low thermal expansion coefficient and low dielectric constant by precipitating mullite and cordierite as main crystal phases after heat treatment of glass. And the like, and mainly relates to a glass composition for a low-temperature fired multilayer substrate which is most suitable for packaging and assembly of semiconductor elements.
【0002】[0002]
【従来の技術およびその課題】従来、コンピュ―タ―や
民生機器等に使用される基板材料はAl2 O3 (アルミ
ナ)が一般的であったが、近年半導体デバイスの高機能
化に伴い、半導体素子の高集積化、高速化、実装の高密
度化が進み、アルミナに変わる基板材料が必要になって
きた。2. Description of the Related Art Conventionally, Al 2 O 3 (alumina) has been generally used as a substrate material for computers, consumer appliances, etc. With higher integration, higher speed, and higher packing density of semiconductor elements, a substrate material that replaces alumina has been required.
【0003】そこで、アルミナよりも低熱膨張率、低誘
電率を有し、かつ低温で焼成可能なガラス、結晶化ガラ
ス、ガラスあるいは結晶化ガラスと耐火物フィラ―の混
合物等、Ag/Pd、Cu、Au等の導体が使用できる
種々の基板材料が提案され一部実用化されているが、要
求特性をすべて満足するものではなく、特に機械的強度
についてはアルミナ基板に及ばず大きな課題になってい
る。Therefore, glass, crystallized glass, a mixture of glass or crystallized glass and a refractory filler, which has a lower coefficient of thermal expansion and a lower dielectric constant than alumina and can be fired at a low temperature, such as Ag / Pd, Cu. Although various substrate materials that can use conductors such as Au and Au have been proposed and partially put into practical use, they do not satisfy all the required characteristics, and mechanical strength is a major issue that is less than that of alumina substrates. There is.
【0004】上記の基板材料に対する要求特性、すなわ
ち約1000℃以下の低温で焼成可能、低熱膨張率、低
誘電率、高強度、高絶縁抵抗を満足するものにムライト
またはコ―ジェライト系の結晶化ガラスがある。しかし
ながら、従来のムライトまたはコ―ジェライト系のガラ
スの製造には1600℃以上の高温が必要なため、炉材
の浸食や電気溶融時に使用する電極等の消耗が激しいと
いう欠点があった。また、液相温度と成形温度にあまり
差がない場合には、かなり早く結晶化が進行して成形不
能になるなどの問題があり、連続生産や大量生産に適さ
なかった。A mullite or cordierite-based crystallization that satisfies the above-mentioned required characteristics of the substrate material, that is, that it can be fired at a low temperature of about 1000 ° C. or less, low thermal expansion coefficient, low dielectric constant, high strength and high insulation resistance. There is glass. However, the conventional manufacturing of mullite or cordierite-based glass requires a high temperature of 1600 ° C. or higher, so that there is a drawback that the erosion of the furnace material and the consumption of electrodes and the like used during electric melting are severe. Further, when there is not much difference between the liquidus temperature and the molding temperature, there is a problem that crystallization progresses so quickly that molding becomes impossible, which is not suitable for continuous production or mass production.
【0005】また、溶融温度を下げるために一般的に知
られている融剤、例えばR2 O(Rはアルカリ金属)、
B2 O3 等を添加すると、熱処理後のガラスの結晶化が
抑制されて機械的強度が低下し、熱膨張係数も大きくな
り、ムライト、コ―ジェライト結晶の長所である高強
度、低熱膨張率等を保てなくなる現象が起こった。In addition, generally known fluxes for lowering the melting temperature, such as R 2 O (R is an alkali metal),
When B 2 O 3 or the like is added, the crystallization of the glass after heat treatment is suppressed, the mechanical strength is lowered, and the coefficient of thermal expansion is increased, and the advantages of mullite and cordierite crystals are high strength and low coefficient of thermal expansion. The phenomenon that it becomes impossible to keep etc. has occurred.
【0006】[0006]
【課題を解決するための手段】本発明は上記の課題をふ
まえた上で開発された低温焼成基板用ガラス組成物に関
する。すなわち、酸化物の重量%表示で: SiO2 :20〜35% Al2 O3 :35〜45% B2 O3 : 5〜15% MgO : 8〜20% CaO : 0〜 4% BaO : 0〜 4% 但しCaO+BaO: 0〜 4% ZnO :0.5〜5% Li2 O : 0〜 2% Na2 O : 0〜 2% K2 O : 0〜 2% 但しLi2 O+Na2 O+K2 O:1〜4% (少なくとも2種必須) ZrO2 : 0〜 3% SnO2 : 0〜 3% 但しZrO2 +SnO2 :0.1〜4% からなり、熱処理によってムライトとコ―ジェライトを
主とした複結晶相を析出するガラス組成物であることを
特徴とする。加えて、1530℃以下の温度で十分溶融
でき、しかもムライトとコ―ジェライトの結晶化度を十
分高く保ち、かつ熱膨張係数を45×10-7/℃以下
に、抗折強度を1800Kg/cm2 以上にすることを
特徴とする。SUMMARY OF THE INVENTION The present invention relates to a glass composition for a low temperature baking substrate, which has been developed based on the above problems. That is, in weight percent on oxide: SiO 2: 20~35% Al 2 O 3: 35~45% B 2 O 3: 5~15% MgO: 8~20% CaO: 0~ 4% BaO: 0 2-4% However CaO + BaO: 0~ 4% ZnO : 0.5~5% Li 2 O: 0~ 2% Na 2 O: 0~ 2% K 2 O: 0~ 2% where Li 2 O + Na 2 O + K 2 O : 1-4% (at least two essential) ZrO 2: 0~ 3% SnO 2: 0~ 3% However ZrO 2 + SnO 2: consists from 0.1 to 4%, mullite and co by heat treatment - cordierite as a main It is a glass composition that precipitates the above double crystal phase. In addition, it can be sufficiently melted at a temperature of 1530 ° C or lower, and the crystallinity of mullite and cordierite is sufficiently high, and the coefficient of thermal expansion is 45 × 10 -7 / ° C or lower and the bending strength is 1800 Kg / cm. It is characterized in that it is 2 or more.
【0007】また、本発明は上記ガラス組成物を用い、
約1000℃以下の低温の焼成で作製した基板に関し、
低熱膨張率、低誘電率、高強度、高絶縁抵抗等の物性が
得られる。The present invention also uses the above glass composition,
Regarding a substrate manufactured by firing at a low temperature of about 1000 ° C. or less,
Physical properties such as low coefficient of thermal expansion, low dielectric constant, high strength, and high insulation resistance can be obtained.
【0008】本発明におけるガラスはB2 O3 、Mg
O、ZnO、R2 O(R=Li、Na、K、少なくとも
2種必須)を必須成分として加えることにより1530
℃以下の温度で十分溶融でき、しかも低温焼成基板用の
材料として適した特性を持つものとなった。The glass in the present invention is composed of B 2 O 3 , Mg
1530 by adding O, ZnO, R 2 O (R = Li, Na, K, at least two essential) as essential components.
It became possible to melt sufficiently at a temperature of ℃ or less and to have characteristics suitable as a material for low temperature firing substrates.
【0009】MgOをガラスに添加することにより、ム
ライト結晶(3Al2 O3 ・2SiO2 )自体の結晶化
度をほとんど下げずに、新たにコ―ジェライト結晶(2
MgO・2Al2 O3 ・5SiO2 )が析出する。コ―
ジェライト結晶は熱膨張係数と誘電率がムライトより低
く、抗折強度はムライトに近い物性を持っており、低温
焼成基板用の材料として適している。従って、MgOの
添加は溶融温度を下げるだけでなく、ト―タルとしての
結晶化度を高めるため、強度向上に寄与し、かつ熱膨張
係数、誘電率を低下させる働きがある。By adding MgO to the glass, a new cordierite crystal ( 2 Al 2 O 3 .2SiO 2 ) is hardly added, while the crystallinity of the mullite crystal (3Al 2 O 3 .2SiO 2 ) itself is not lowered.
MgO.2Al 2 O 3 .5SiO 2 ) precipitates. Co-
Jellite crystals have lower thermal expansion coefficient and dielectric constant than mullite and physical properties similar to mullite in bending strength, and are suitable as materials for low-temperature fired substrates. Therefore, addition of MgO not only lowers the melting temperature but also increases the crystallinity of the total, which contributes to the improvement of strength and also has the function of lowering the thermal expansion coefficient and the dielectric constant.
【0010】また、R2 O(R=Li、Na、K、少な
くとも2種必須)成分を添加することにより、高温時に
おけるガラスの電気伝導度が大きくなるため電気溶融の
適用が可能となり、クリ―ンな状態でガラスを溶融する
ことが可能となった。R2 O成分は単独で用いると熱処
理後の結晶化ガラスの絶縁抵抗を低下させるが、二成分
以上を同時に添加し混合アルカリ効果を利用すると、絶
縁抵抗の低下を抑制することができる。三成分以上のア
ルカリ金属酸化物を添加すると、さらに効果が著しい。Further, by adding the R 2 O (R = Li, Na, K, at least two essential components) component, the electric conductivity of the glass at high temperature becomes large, so that electric melting can be applied, and -It is now possible to melt the glass in a stable state. When the R 2 O component is used alone, it lowers the insulation resistance of the crystallized glass after heat treatment, but when two or more components are added at the same time and the mixed alkali effect is used, the reduction of the insulation resistance can be suppressed. Addition of three or more components of alkali metal oxides makes the effect more remarkable.
【0011】結晶化促進剤についてはSnO2 、ZrO
2 が最も効果のあることがわかった。一般的にガラス化
領域が広く溶融が容易な組成域では、結晶化度があまり
高くならないが、上記結晶化促進剤をガラス中に添加す
ることにより、溶融が容易な組成域でも低温焼成基板用
のガラスとして十分な特性を持つ結晶化度の高いものが
得られた。As the crystallization accelerator, SnO 2 and ZrO are used.
It turns out that 2 is the most effective. Generally, the crystallinity does not increase so much in the composition region where the vitrification region is wide and the melting is easy, but by adding the above-mentioned crystallization accelerator to the glass, even in the composition region where the melting is easy, the low temperature firing substrate can be used. A glass with sufficient crystallinity having sufficient characteristics was obtained.
【0012】しかし、結晶化促進剤の一つであるTiO
2 を使用すると、低温焼成基板の作製時黒いしみが現れ
るため使用できないことがわかった。また、P2 O5 は
添加することにより溶融温度を下げ、かつ結晶化促進剤
として若干の効果があるが、低温焼成基板の作製時ボイ
ドが現れるため使用できない。However, TiO, which is one of the crystallization accelerators,
With 2, it was found that not available to appear is produced when black spots low temperature fired substrate. Further, although P 2 O 5 has a slight effect as a crystallization accelerator by lowering the melting temperature by adding P 2 O 5, it cannot be used because a void appears during the production of a low temperature fired substrate.
【0013】本発明の酸化物の限定理由は下記の通りで
ある。The reasons for limiting the oxide of the present invention are as follows.
【0014】SiO2 はガラス形成酸化物であり、主な
析出結晶相であるムライト(3Al2 O3 ・2Si
O2 )とコ―ジェライト(2MgO・2Al2 O3 ・5
SiO2)の構成成分であるため、20wt%未満であ
るとこれらの結晶が析出しにくくなる。逆に35wt%
を越えると、安定したガラス化領域に入り結晶化度が上
がらない。SiO 2 is a glass-forming oxide, and the main precipitated crystal phase is mullite (3Al 2 O 3 .2Si).
O 2 ) and cordierite (2MgO ・ 2Al 2 O 3・ 5)
Since it is a constituent component of SiO 2 ), if it is less than 20 wt%, it becomes difficult for these crystals to precipitate. Conversely, 35 wt%
If it exceeds, the crystallinity does not increase because it enters a stable vitrification region.
【0015】Al2 O3 はガラス中間酸化物であり、主
な析出結晶相であるムライトとコ―ジェライトの構成成
分である。Al2 O3 が35wt%未満であると結晶化
度が50vol%に満たず、抗折強度が1800Kg/
cm2 に達しない。逆に45wt%を越えると、溶融温
度が高くなり失透しやすくなる。B2 O3 は融剤として
使用され、5wt%未満では溶融温度が高くなりすぎ
る。逆に15wt%を越えると、結晶化度が下がり好ま
しくない。Al 2 O 3 is a glass intermediate oxide and is a constituent component of mullite and cordierite, which are main precipitated crystal phases. When Al 2 O 3 is less than 35 wt%, the crystallinity is less than 50 vol%, and the bending strength is 1800 Kg /
Does not reach cm 2 . On the other hand, if it exceeds 45 wt%, the melting temperature becomes high and devitrification is likely to occur. B 2 O 3 is used as a flux, and if it is less than 5 wt%, the melting temperature becomes too high. On the other hand, if it exceeds 15 wt%, the crystallinity is lowered, which is not preferable.
【0016】R´O(R´=Ca、Ba)はガラス修飾
酸化物である。R´Oを添加すると、ガラスの失透化を
防ぎガラス化領域を広げ、溶融温度を下げる働きがある
が、その反面添加するに従い結晶化度が下がる。それ
故、4wt%を越えて添加すると熱膨張係数が45×1
0-7/℃より大となり、低温焼成基板に搭載するシリコ
ンチップ(熱膨張係数=30×10-7/℃)とのマッチ
ング性の低下をきたし、強度も低下する。R'O (R '= Ca, Ba) is a glass-modified oxide. When R'O is added, it has the function of preventing devitrification of the glass and widening the vitrification region and lowering the melting temperature, but on the other hand, the crystallinity decreases as it is added. Therefore, if added in excess of 4 wt%, the coefficient of thermal expansion will be 45 x 1
It becomes higher than 0 -7 / ° C, and the matching property with the silicon chip (coefficient of thermal expansion = 30 × 10 -7 / ° C) mounted on the low temperature fired substrate is lowered, and the strength is also lowered.
【0017】MgOはコ―ジェライト結晶の構成成分で
あり、8wt%未満ではコ―ジェライト結晶の析出量が
少なく、ト―タルとしての結晶化度が上がらない。逆に
20wt%を越えると、分相領域に入り溶融時に失透し
てしまう。MgO is a constituent component of cordierite crystals, and if it is less than 8 wt%, the amount of precipitated cordierite crystals is small and the crystallinity as total cannot be improved. On the other hand, if it exceeds 20 wt%, it enters the phase separation region and devitrifies during melting.
【0018】ZnOはB2 O3 と同様融剤として使用さ
れ、B2 O3 をZnOで置換することにより溶融時に揮
散しやすいB2 O3 量を減少させることができる。ま
た、ガラス自体の化学的耐久性を向上させる働きがあ
る。ZnOは0.5wt%未満ではその効果がなく、逆
に5wt%を越えると安定したガラス化領域に入り、ム
ライトとコ―ジェライトの結晶化度が上がらず、またス
ピネル系の結晶が出現したりして、熱膨張係数を45×
10-7/℃以下に保てなくなる。[0018] ZnO is used as same flux as B 2 O 3, the B 2 O 3 can reduce volatilization easily the amount of B 2 O 3 in molten by replacing ZnO. It also has the function of improving the chemical durability of the glass itself. If ZnO is less than 0.5 wt%, it has no effect. On the contrary, if it exceeds 5 wt%, it enters a stable vitrification region, the crystallinity of mullite and cordierite does not rise, and spinel-type crystals appear. And the coefficient of thermal expansion is 45 ×
It cannot be kept below 10 -7 / ° C.
【0019】R2 O(R=Li、Na、K)は融剤とし
て、また電気溶融時の電気伝導度を高めるキャリヤ―と
して使用される。低温焼成基板の絶縁抵抗をできるだけ
高く保つために一成分を単独で用いるのではなく、二成
分以上を同時に用いる必要がある。R2 Oは合計で1w
t%未満では電気溶融時キヤリヤ―としての効果がな
い。逆にLi2 O、Na2 O、K2 Oのいずれかが2w
t%を越えるか、その合計が4wt%を越えると低温焼
成基板としての絶縁抵抗が低下するばかりでなく、熱膨
張係数が大きくなりすぎる。上記の理由でR2 Oは1〜
4wt%とするが、その構成比は少なくとも2種が0.
3wt%以上であることが好ましい。また、R2 Oを二
成分とする場合はどの二種の組合せでもよいが、混合ア
ルカリ効果が最も顕著に現れるLi2 OとK2 Oの組合
せがさらに好ましい。R2 Oを三成分添加すると更に効
果は著しい。R 2 O (R = Li, Na, K) is used as a fluxing agent and as a carrier for enhancing electric conductivity during electric melting. In order to keep the insulation resistance of the low temperature fired substrate as high as possible, it is necessary to use not only one component but two or more components at the same time. R 2 O is 1w in total
If it is less than t%, there is no effect as a carrier during electric melting. On the contrary, either Li 2 O, Na 2 O, or K 2 O is 2w
If it exceeds t% or if the total exceeds 4% by weight, not only the insulation resistance as a low temperature fired substrate lowers but also the thermal expansion coefficient becomes too large. R 2 O is 1 to 1 for the above reason.
Although it is 4 wt%, the composition ratio of at least two kinds is 0.
It is preferably 3 wt% or more. When R 2 O is used as the two components, any combination of two kinds may be used, but a combination of Li 2 O and K 2 O in which the mixed alkali effect is most remarkable is more preferable. The effect is more remarkable when three components of R 2 O are added.
【0020】ZrO2 、SnO2 は結晶化促進剤として
使用される。ZrO2 とSnO2 の合計量が0.1wt
%未満であるとその効果がなく、いずれか一方が3wt
%を越えるか、もしくは合計で4wt%を越えると15
30℃以下の温度で溶融しきれず、るつぼまたは窯の底
に溶け残りを生じる。また、結晶化促進剤としての作用
の他、融剤としての作用も持つF2 をSnO2 ,ZrO
2 と組合わせて使用してもよい。ZrO 2 and SnO 2 are used as crystallization accelerators. The total amount of ZrO 2 and SnO 2 is 0.1 wt
% Is less effective, one of them is 3 wt.
%, Or more than 4 wt% in total, 15
It cannot be completely melted at a temperature of 30 ° C. or lower, and unmelted residue is left at the bottom of the crucible or kiln. Further, in addition to the function as a crystallization accelerator, F 2 having a function as a flux is SnO 2 , ZrO.
May be used in combination with 2 .
【0021】[0021]
【発明の作用】本願組成のガラス組成物を使用すること
により、主としてムライトとコ―ジェライトの複結晶相
を有する低温焼成基板が得られる。すなわち、B
2 O3 、MgO、ZnO、R2 O(R=Li、Na、
K)等の融剤を加え、さらに、ZrO2、SnO2 等の
結晶化促進剤を加えることにより、1530℃以下の温
度で容易に溶融でき、約1000℃以下の低温で焼成が
可能であり、熱膨張係数が45×10-7/℃以下、誘電
率7以下、抗折強度1800Kg/cm2 以上、絶縁抵
抗1014Ω・cm以上等の特性を持つ低温焼成基板を得
ることができる。By using the glass composition of the present invention, a low temperature fired substrate mainly having a double crystal phase of mullite and cordierite can be obtained. That is, B
2 O 3 , MgO, ZnO, R 2 O (R = Li, Na,
By adding a fluxing agent such as K) and a crystallization accelerator such as ZrO 2 , SnO 2 or the like, it can be easily melted at a temperature of 1530 ° C. or lower and can be fired at a low temperature of about 1000 ° C. or lower. It is possible to obtain a low temperature fired substrate having characteristics such as a coefficient of thermal expansion of 45 × 10 −7 / ° C. or less, a dielectric constant of 7 or less, a bending strength of 1800 Kg / cm 2 or more, and an insulation resistance of 10 14 Ω · cm or more.
【0022】[0022]
【実施例および比較例】常法に従い、表に示す目標組成
となるように各成分原料を適宜秤量、調合してバッチを
調製し、表中に示す溶融温度で2〜3時間溶解し、溶融
ガラスとする。この溶融ガラスを水冷ロ―ルでフレ―ク
状に成形する。このガラスをボ―ルミル等で微紛砕し、
平均粒径約2〜5μmのガラス微粉体とする。[Examples and Comparative Examples] According to a conventional method, each ingredient material is appropriately weighed and blended so as to obtain the target composition shown in the table to prepare a batch, which is melted at the melting temperature shown in the table for 2 to 3 hours and melted. Use glass. This molten glass is molded into flakes with a water-cooled roll. Finely crush this glass with a ball mill,
The glass fine powder has an average particle size of about 2 to 5 μm.
【0023】基板を作製する場合には、次いでこれに有
機バインダ―、溶剤等を加えスラリ―状にした後、ドク
タ―ブレ―ド法でグリ―ンシ―トに成形した。これを切
断、積層後大気中で200℃/hの昇温速度で850〜
1000℃まで上げ、この焼成温度で2時間保持し低温
焼成基板を得、誘電率と絶縁抵抗を以下に示す方法で測
定した。その結果を表1(実施例)および表2(比較
例)に示す。In the case of producing a substrate, an organic binder, a solvent and the like were added to the substrate to make a slurry, which was then molded into a green sheet by the doctor blade method. After cutting and stacking this, 850 to 850 at a heating rate of 200 ° C / h in the atmosphere.
The temperature was raised to 1000 ° C., the firing temperature was maintained for 2 hours to obtain a low temperature firing substrate, and the dielectric constant and insulation resistance were measured by the following methods. The results are shown in Table 1 (Examples) and Table 2 (Comparative Examples).
【0024】また、示差熱分析(DTA)、熱膨張係
数、結晶相、結晶化度、抗折強度については本実施例お
よび比較例で得られたガラス微粉体を用いて以下に示す
方法で測定した。その結果を表1(実施例)および表2
(比較例)に示す。The differential thermal analysis (DTA), coefficient of thermal expansion, crystal phase, crystallinity, and bending strength were measured by the following methods using the glass fine powders obtained in this example and comparative examples. did. The results are shown in Table 1 (Examples) and Table 2.
(Comparative example).
【0025】誘電率 各ガラス粉末を前述の通り基板に成形したものに電極を
施し、25℃−60%RH、1MHzにおいてインピ―
ダンスメ―タ―で測定した。この値は7以下であること
が要求される。Dielectric Constant Each glass powder was molded on a substrate as described above, and an electrode was applied to the substrate and impeded at 25 ° C.-60% RH and 1 MHz.
Measured with a dance meter. This value is required to be 7 or less.
【0026】絶縁抵抗 各ガラス粉末を前述の通り基板に成形したものに電極を
施し、25℃−60%RH、500Vにおいて絶縁抵抗
計で測定した。この値は1014Ω・cm以上であることが
要求される。Insulation Resistance Each glass powder was molded on a substrate as described above, an electrode was applied to the glass powder, and the resistance was measured by an insulation resistance meter at 25 ° C.-60% RH and 500V. This value is required to be 10 14 Ω · cm or more.
【0027】示差熱分析(DTA) 各ガラス粉末500mgを示差熱分析装置の試料ホルダ
―に入れ、室温から20℃/minの昇温速度で上昇さ
せ、転移点、軟化点、結晶化ピ―ク温度を測定した。Differential thermal analysis (DTA) 500 mg of each glass powder was put into a sample holder of a differential thermal analyzer, and the temperature was raised from room temperature at a temperature rising rate of 20 ° C./min to obtain a transition point, a softening point and a crystallization peak. The temperature was measured.
【0028】熱膨張係数 各ガラス粉末をペレッタ―で棒状に加圧成形した後、D
TAで測定した結晶化ピ―ク温度まで200℃/hで昇
温し、その温度で2時間保持し焼結したサンプルの熱膨
張係数(30〜400℃の平均値、単位:10-7/℃)
を測定した。Coefficient of thermal expansion Each glass powder was pressed into a rod shape with a pelleter, and then D
The thermal expansion coefficient (average value of 30 to 400 ° C., unit: 10 −7 / of the sample which was heated at 200 ° C./h to the crystallization peak temperature measured by TA and held at that temperature for 2 hours and sintered ℃)
Was measured.
【0029】結晶相 前述ので得られたサンプルと同じ物を再び微粉体とし
た後、粉末X線回折により測定した。Crystal Phase The same material as the sample obtained as described above was made into fine powder again and then measured by powder X-ray diffraction.
【0030】結晶化度 粉末X線回折のピ―ク強度を測定(メインピ―クの5〜
10本の合計)し、予め作成しておいた検量線をもとに
計算した(vol%)。これは低温焼成基板の抗折強度
と密接な関係があり、結晶化度が50vol%以上でな
いと1800Kg/cm2 以上の抗折強度が得られな
い。Crystallinity The peak intensity of powder X-ray diffraction was measured (5 to 5% of the main peak).
10 pieces) and calculated based on a calibration curve prepared in advance (vol%). This has a close relationship with the bending strength of the low temperature fired substrate, and unless the crystallinity is 50 vol% or more, a bending strength of 1800 kg / cm 2 or more cannot be obtained.
【0031】抗折強度 前述ので得られたサンプルと同じ物をJIS−R16
01に準じて加工し、3点曲げによりその強度を測定し
た。この値は1800Kg/cm2 以上であることが要
求される。Bending strength JIS-R16 is the same as the sample obtained above.
The sample was processed according to No. 01, and its strength was measured by three-point bending. This value is required to be 1800 Kg / cm 2 or more.
【0032】[0032]
【表1】 [Table 1]
【0033】[0033]
【表2】 [Table 2]
───────────────────────────────────────────────────── フロントページの続き (72)発明者 栗林 秀行 兵庫県西宮市浜松原町2番21号山村硝子株 式会社内 (72)発明者 田中 淳 鹿児島県国分市山下町1番1号京セラ株式 会社鹿児島国分工場内 (72)発明者 森上 義博 鹿児島県国分市山下町1番1号京セラ株式 会社鹿児島国分工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hideyuki Kuribayashi Yamamura Glass Co., Ltd. 2-21 Hamamatsubara-cho, Nishinomiya-shi, Hyogo (72) Inventor Jun Tanaka 1-1-1 Yamashita-cho, Kokubun-shi, Kagoshima Kyocera Stock Company Kagoshima Kokubun Plant (72) Inventor Yoshihiro Morikami 1-1, Yamashita-cho, Kokubun City, Kagoshima Prefecture Kyocera Stock Company Kagoshima Kokubun Plant
Claims (3)
とコ―ジェライトの複結晶相が析出するガラスであっ
て、酸化物の重量%表示で: SiO2 :20〜35% Al2 O3 :35〜45% B2 O3 : 5〜15% MgO : 8〜20% CaO : 0〜 4% BaO : 0〜 4% 但しCaO+BaO: 0〜 4% ZnO :0.5〜5% Li2 O : 0〜 2% Na2 O : 0〜 2% K2 O : 0〜 2% 但しLi2 O+Na2 O+K2 O:1〜4% (少なくとも2種必須) ZrO2 : 0〜 3% SnO2 : 0〜 3% 但しZrO2 +SnO2 :0.1〜4% からなる低温焼成基板用ガラス組成物。1. A glass in which a double crystal phase of mullite and cordierite is mainly deposited by heat treatment, and is expressed in weight% of oxide: SiO 2 : 20 to 35% Al 2 O 3 : 35 to 45. % B 2 O 3: 5~15% MgO: 8~20% CaO: 0~ 4% BaO: 0~ 4% provided that CaO + BaO: 0~ 4% ZnO : 0.5~5% Li 2 O: 0~ 2 % Na 2 O: 0 to 2% K 2 O: 0 to 2% However, Li 2 O + Na 2 O + K 2 O: 1 to 4% (at least two kinds are essential) ZrO 2 : 0 to 3% SnO 2 : 0 to 3% However, a glass composition for a low-temperature fired substrate, which comprises ZrO 2 + SnO 2 : 0.1 to 4%.
ガラスの熱処理後主としてムライトとコ―ジェライトの
複結晶相を有し、熱膨張係数が45×10-7/℃以下、
抗折強度が1800Kg/cm2 以上である請求項1に
記載の低温焼成基板用ガラス組成物。2. Melting is possible at a temperature below 1530 ° C.,
After heat treatment of glass, it mainly has a mullite and cordierite double crystal phase and has a thermal expansion coefficient of 45 × 10 −7 / ° C. or less,
The glass composition for a low temperature fired substrate according to claim 1, which has a bending strength of 1800 Kg / cm 2 or more.
のガラス組成物を成形、焼成して作製される低温焼成基
板。3. A low temperature fired substrate produced by molding and firing the glass composition according to claim 1 and / or 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04072337A JP3096136B2 (en) | 1992-02-22 | 1992-02-22 | Glass composition for low-temperature fired substrate and substrate obtained therefrom |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04072337A JP3096136B2 (en) | 1992-02-22 | 1992-02-22 | Glass composition for low-temperature fired substrate and substrate obtained therefrom |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05238774A true JPH05238774A (en) | 1993-09-17 |
JP3096136B2 JP3096136B2 (en) | 2000-10-10 |
Family
ID=13486382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP04072337A Expired - Fee Related JP3096136B2 (en) | 1992-02-22 | 1992-02-22 | Glass composition for low-temperature fired substrate and substrate obtained therefrom |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5468694A (en) * | 1992-11-21 | 1995-11-21 | Yamamura Glass Co. Ltd. | Composition for producing low temperature co-fired substrate |
EP0755901A2 (en) * | 1995-07-24 | 1997-01-29 | Yamamura Glass Co. Ltd. | Glass composition for making magnetic disk substrates and magnetic disk substrate |
US5726108A (en) * | 1995-07-24 | 1998-03-10 | Yamamura Glass Co., Ltd. | Glass-ceramic magnetic disk substrate |
US6403199B2 (en) | 2000-03-06 | 2002-06-11 | Murata Manufacturing Co., Ltd | Insulating ceramic, multilayer ceramic substrate, ceramic electronic parts and laminated ceramic electronic parts |
US6403200B2 (en) | 2000-03-06 | 2002-06-11 | Murata Manufacturing Co., Ltd. | Insulator ceramic composition |
US6713417B2 (en) | 2000-07-21 | 2004-03-30 | Murata Manufacturing Co., Ltd. | Insulative ceramic compact |
US6753070B2 (en) | 2000-07-21 | 2004-06-22 | Murata Manufacturing Co., Ltd. | Insulating ceramic compact, ceramic multilayer substrate, and ceramic electronic device |
JP2011208979A (en) * | 2010-03-29 | 2011-10-20 | Kyocera Corp | Ceramic wiring board for probe card and probe card using the same |
JP2013249238A (en) * | 2012-06-01 | 2013-12-12 | Nihon Yamamura Glass Co Ltd | Non-lead glass ceramic composition for low temperature firing substrate |
CN111003935A (en) * | 2019-11-14 | 2020-04-14 | 台嘉玻璃纤维有限公司 | Glass material and preparation method thereof |
-
1992
- 1992-02-22 JP JP04072337A patent/JP3096136B2/en not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5468694A (en) * | 1992-11-21 | 1995-11-21 | Yamamura Glass Co. Ltd. | Composition for producing low temperature co-fired substrate |
EP0755901A2 (en) * | 1995-07-24 | 1997-01-29 | Yamamura Glass Co. Ltd. | Glass composition for making magnetic disk substrates and magnetic disk substrate |
EP0755901A3 (en) * | 1995-07-24 | 1997-02-05 | Yamamura Glass Co. Ltd. | Glass composition for making magnetic disk substrates and magnetic disk substrate |
US5726108A (en) * | 1995-07-24 | 1998-03-10 | Yamamura Glass Co., Ltd. | Glass-ceramic magnetic disk substrate |
US6403199B2 (en) | 2000-03-06 | 2002-06-11 | Murata Manufacturing Co., Ltd | Insulating ceramic, multilayer ceramic substrate, ceramic electronic parts and laminated ceramic electronic parts |
US6403200B2 (en) | 2000-03-06 | 2002-06-11 | Murata Manufacturing Co., Ltd. | Insulator ceramic composition |
US6713417B2 (en) | 2000-07-21 | 2004-03-30 | Murata Manufacturing Co., Ltd. | Insulative ceramic compact |
US6753070B2 (en) | 2000-07-21 | 2004-06-22 | Murata Manufacturing Co., Ltd. | Insulating ceramic compact, ceramic multilayer substrate, and ceramic electronic device |
JP2011208979A (en) * | 2010-03-29 | 2011-10-20 | Kyocera Corp | Ceramic wiring board for probe card and probe card using the same |
JP2013249238A (en) * | 2012-06-01 | 2013-12-12 | Nihon Yamamura Glass Co Ltd | Non-lead glass ceramic composition for low temperature firing substrate |
CN111003935A (en) * | 2019-11-14 | 2020-04-14 | 台嘉玻璃纤维有限公司 | Glass material and preparation method thereof |
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