JPH0193436A - Glass composition for substrate material - Google Patents
Glass composition for substrate materialInfo
- Publication number
- JPH0193436A JPH0193436A JP24889787A JP24889787A JPH0193436A JP H0193436 A JPH0193436 A JP H0193436A JP 24889787 A JP24889787 A JP 24889787A JP 24889787 A JP24889787 A JP 24889787A JP H0193436 A JPH0193436 A JP H0193436A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- glass composition
- dielectric constant
- low
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 26
- 239000000203 mixture Substances 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 title claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 16
- 239000000843 powder Substances 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000919 ceramic Substances 0.000 abstract description 7
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052878 cordierite Inorganic materials 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract description 3
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 2
- 229910011255 B2O3 Inorganic materials 0.000 abstract 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- NOTVAPJNGZMVSD-UHFFFAOYSA-N potassium monoxide Inorganic materials [K]O[K] NOTVAPJNGZMVSD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005245 sintering Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、主に半導体素子を搭載するための回路形成用
基板として適した基板材料用ガラス組成物に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a glass composition for a substrate material suitable mainly as a circuit forming substrate on which a semiconductor element is mounted.
［従来技術とその問題点コ
従来より回路形成用基板としては、主に強度、電気的特
性、絶縁性に優れているアルミナ（＾１□０、通常９０
重量％を超える純度）が多用されている。[Prior art and its problems] Conventionally, alumina (^1□0, usually 90%
Purity exceeding % by weight) is often used.
しかしながらアルミナは、焼成温度が１５００〜１６０
０℃と極めて高く、回路を構成する導体もかがる焼成温
度で劣化しないＭｏ、 Ｗ等の高融点の材料を使用し且
つ還元雰囲気で焼成する必要があるので作業性が悪いこ
と、熱膨張係数が約７０ＸｌＯ−７／℃と高いため半導
体素子（約３２〜３５Ｘ ｔｏ−７／”Ｃ）を直接搭載
できない等の欠点がある。However, alumina has a firing temperature of 1500 to 160
The firing temperature is extremely high at 0°C, and the conductors that make up the circuit are heated.It uses materials with high melting points such as Mo and W, which do not deteriorate at the firing temperature, and must be fired in a reducing atmosphere, resulting in poor workability and thermal expansion. Since the coefficient is as high as approximately 70XlO-7/"C, there are drawbacks such as the inability to directly mount a semiconductor element (approximately 32 to 35X to-7/"C).
上記の欠点に加え、アルミナは誘電率（ε）が約ｌＯと
高いため高速回路用に適さないという問題がある。すな
わち導体中を伝播する信号の速度は周囲を形成する材料
の誘電率（ε）が高い程遅れることが一般に知られてい
るが、アルミナセラミックは誘電率（ε）が高いため演
算処理の高速化の要求に応えられない。In addition to the above-mentioned drawbacks, alumina has a high dielectric constant (ε) of about 1O, which makes it unsuitable for high-speed circuits. In other words, it is generally known that the higher the dielectric constant (ε) of the surrounding material, the slower the speed of a signal propagating in a conductor, but alumina ceramics have a high dielectric constant (ε) that speeds up arithmetic processing. unable to meet the demands of
［発明の目的］
本発明の目的は、回路形成用基板に要求される各条件、
すなわち強度、電気的特性、絶縁性に優れていると共に
導体として融点の低い金属、例えばＡｕ（融点１０６０
℃）、Ａｇ（融点９６０℃）、Ｃｕ（融点１０８０℃）
等を用いることができるように焼成温度カ月０００℃以
下であること、熱膨張係数が半導体素子のそれと近似し
ていること、高速演算処理に充分対応するため低い誘電
率（ε）を有すること等の各条件を満足し、溶融性も良
好な基板材料用ガラス組成物を提供することにある。[Object of the invention] The object of the invention is to meet the various conditions required for a circuit forming board,
That is, metals that have excellent strength, electrical properties, and insulation properties and have a low melting point as a conductor, such as Au (melting point 1060
℃), Ag (melting point 960℃), Cu (melting point 1080℃)
The firing temperature must be below 1,000 degrees Celsius, the coefficient of thermal expansion must be close to that of semiconductor elements, and the dielectric constant (ε) must be low enough to support high-speed arithmetic processing. An object of the present invention is to provide a glass composition for a substrate material that satisfies each of the following conditions and has good meltability.
［発明の構成］
本発明の基板材料用ガラス組成物は、重量百分率で、Ｓ
ｉ０□ ３０〜６５％、Ａｌ２Ｏ３１〜３０％、Ｂ２０
．１〜２５％、Ｎａ２００．２〜５％、Ｋ２Ｏ０〜５％
、ＭｇＯ １〜３０％、ＣａＯ（１−３０％、Ｂｉ２Ｏ
３（１−３０％からなることを特徴とし、より好ましく
はＳｉＯ□ ３５〜５５％、＾１２０３１０〜２０％、
Ｂ２０．５〜２０％、Ｎａ２Ｏ０，４〜３％、Ｋ２Ｏ０
，５〜３％、ＭｇＯ ４〜２０％、ＣａＯ！＋−２０％
、Ｂｉ２Ｏ３２〜２５％からなることを特徴とする。[Structure of the Invention] The glass composition for a substrate material of the present invention has a weight percentage of S
i0□ 30-65%, Al2O31-30%, B20
．． 1-25%, Na200.2-5%, K2O0-5%
, MgO 1-30%, CaO (1-30%, Bi2O
3 (characterized by consisting of 1-30%, more preferably SiO□ 35-55%, ^120310-20%,
B20.5-20%, Na2O0.4-3%, K2O0
, 5-3%, MgO 4-20%, CaO! +-20%
, Bi2O3 2 to 25%.
本発明のガラスは、熱膨張係数及び誘電率（ε）を高く
する成分であるＰｂＯ、ＢａＯを含有せず、また溶融性
が良く且つ適当な軟化点を有するガラスを得るという観
点から選択したもので、各成分の割合を上記のように限
定した理由は以下のとおりである。The glass of the present invention is selected from the viewpoint of obtaining a glass that does not contain PbO and BaO, which are components that increase the coefficient of thermal expansion and dielectric constant (ε), and has good meltability and an appropriate softening point. The reason for limiting the proportions of each component as described above is as follows.
５ｉ０２が６５％より多い場合はガラスの溶融が困難と
なり、３０％より少ない場合はガラスの軟化点が低くな
りすぎる。When 5i02 is more than 65%, it becomes difficult to melt the glass, and when it is less than 30%, the softening point of the glass becomes too low.
Ａｌ２Ｏ３が３０％より多い場合はガラスの軟化点が高
くなりすぎ、１％より少ない場合は化学的耐久性が悪く
なる。If Al2O3 is more than 30%, the softening point of the glass will be too high, and if it is less than 1%, the chemical durability will be poor.
Ｂ２０．はガラスの溶融性を良くするフラックス剤とし
て１〜２５％含有するが、２５％より多い場合は化学的
耐久性が悪くなり、１％より少ない場合はガラスの溶融
が困難となる。B20. is contained in an amount of 1 to 25% as a fluxing agent that improves the meltability of glass, but if it is more than 25%, the chemical durability deteriorates, and if it is less than 1%, it becomes difficult to melt the glass.
Ｎａ２Ｏもフラックス剤として０．２〜５％含有するが
、５％より多い場合は熱膨張係数゛及び誘電率（ε）が
高くなりすぎ、０．２％より少ない場合はガラスの溶融
が困難となる。Na2O is also contained as a fluxing agent in an amount of 0.2 to 5%, but if it is more than 5%, the thermal expansion coefficient and dielectric constant (ε) will become too high, and if it is less than 0.2%, it will be difficult to melt the glass. Become.
Ｋ２Ｏもフラックス剤として添加できるが、５％より多
い場合は熱膨張係数及び誘電率（ε）が高くなりすぎる
。K2O can also be added as a fluxing agent, but if it is more than 5%, the thermal expansion coefficient and dielectric constant (ε) become too high.
ＭｇＯはガラスの化学的安定性を向上させる効果がある
が、３０％より多い場合は誘電率（ε）が高くなりすぎ
、１％より少ない場合は上記効果が得られない。MgO has the effect of improving the chemical stability of glass, but if it is more than 30%, the dielectric constant (ε) becomes too high, and if it is less than 1%, the above effect cannot be obtained.
ＣａＯ及びＢｉ２０Ｂもフラックス剤として添加できる
が、各々３０％より多い場合はガラスの軟化点が低くな
りすぎる。CaO and Bi20B can also be added as fluxing agents, but if each exceeds 30%, the softening point of the glass becomes too low.
本発明のガラスは、抗折強度を向上させるために上記ガ
ラス粉末３５〜７０重量％に対してセラミック粉末を３
０〜６５重量％混合させることが可能である。セラミッ
ク粉末としては、コーディエライト、アルミナ、ジルコ
ン、石英等が使用できるが、セラミック粉末が６５％よ
り多い場合は緻密な構造の焼結体が得られず、３０％よ
り少ない場合は焼結体の強度を高くするという効果が得
られ難い。The glass of the present invention contains 35 to 70% by weight of the above-mentioned glass powder and 3% to 70% by weight of ceramic powder in order to improve the bending strength.
It is possible to mix 0 to 65% by weight. Cordierite, alumina, zircon, quartz, etc. can be used as the ceramic powder, but if the ceramic powder is more than 65%, a sintered body with a dense structure cannot be obtained, and if it is less than 30%, the sintered body cannot be obtained. It is difficult to obtain the effect of increasing the strength of the steel.
［実施例］
以下に実施例に基づいて本発明の基板材料用ガラス組成
物を説明する。[Example] The glass composition for substrate material of the present invention will be described below based on Examples.
表１の試料ｋ １〜８は、本発明のガラス粉末組成を示
すもので、各試料について軟化点、熱膨張係数、誘電率
（ε）、誘電正接（ｔａｎδ）、体積抵抗を表示した。Samples k1 to k8 in Table 1 show the glass powder composition of the present invention, and the softening point, thermal expansion coefficient, dielectric constant (ε), dielectric loss tangent (tan δ), and volume resistance of each sample are shown.
以下余白
表１
表１のＮ（Ｌ １〜８の各ガラス組成になるように二酸
化珪素、アルミナ、硼酸、炭酸ソーダ、炭酸カリウム、
酸化マグネシウム、炭酸カルシウム、酸化ビスマスを調
合したバッチを白金ルツボに入れ、約１４００℃で２時
間溶融したのち冷却してアルミナボールミルで粉砕し、
平均粒径的５μのガラスの微粉末を得た。こうしてでき
な粉末の示差熱分析より軟化点を求めたところ７５０〜
８５０℃の低い値を示した。また熱膨張係数は、上記溶
融物を５×５ Ｘ ５０ｍｍの棒状に成型して測定し、
誘電率（ε）、誘電正接（ｔａｎδ）、体積抵抗は溶融
物を３０φ×２ｍｍの円板状に成型して測定した。Margin Table 1 Below Table 1 N(L) Silicon dioxide, alumina, boric acid, soda carbonate, potassium carbonate,
A mixed batch of magnesium oxide, calcium carbonate, and bismuth oxide was placed in a platinum crucible, melted at approximately 1400°C for 2 hours, cooled, and ground in an alumina ball mill.
A fine glass powder having an average particle size of 5 μm was obtained. The softening point of the resulting powder was determined by differential thermal analysis and was 750~
It showed a low value of 850°C. In addition, the coefficient of thermal expansion was measured by molding the above melt into a rod shape of 5 x 5 x 50 mm,
The dielectric constant (ε), dielectric loss tangent (tan δ), and volume resistance were measured by molding the melt into a disk shape of 30φ×2 mm.
表２の試料Ｎ［Ｌ １〜４は表１で示した本発明のガラ
ス粉末試料Ｎｏ、１及び４にセラミック粉末を混合した
ものを示し、試料Ｎ［Ｌ５は従来のガラス粉末（Ｓｉ０
２ ４８．５％、Ａｌ２Ｏ，２０，０％、ｅ２ｏ、 ４
．０％、Ｎａ２０１．５％、Ｋ２Ｏ１，０％、ＣａＯ３
，５％、Ｍｇ８ １．５％、Ｐｂ０１５．０％〉とアル
ミナ粉末を混合したものを示し、また試料ＮＩＬ６はア
ルミナを示したものである。Samples N [L 1 to 4 in Table 2 are glass powder samples Nos. 1 and 4 of the present invention shown in Table 1 mixed with ceramic powder, and sample N [L5 is a conventional glass powder (Si0
2 48.5%, Al2O, 20.0%, e2o, 4
．． 0%, Na201.5%, K2O1.0%, CaO3
, 5%, Mg8 1.5%, Pb0 15.0%> and alumina powder, and sample NIL6 shows alumina.
表２の試料Ｎｏ、 １〜５の各試料は平均粒径５μに粉
砕したガラス粉末と同等の平均粒径をもつコーディエラ
イトあるいはアルミナのセラミック粉末を表の割合に混
合し、棒状及び円板状にプレス成型した後、表中の温度
条件で焼成して棒状成型物によって熱膨張係数及び抗折
強度（三点荷重方式）を測定し、円板状焼成物によって
誘電率（ε）、誘電正接（ｔａｎδ）、体積抵抗を測定
した。Sample Nos. 1 to 5 in Table 2 are made by mixing cordierite or alumina ceramic powder with the same average particle size as glass powder crushed to an average particle size of 5μ in the proportions shown in the table, and forming rod-shaped and disc-shaped After press-molding into a shape, it was fired under the temperature conditions shown in the table, and the thermal expansion coefficient and bending strength (three-point loading method) were measured using the rod-shaped molded product, and the dielectric constant (ε) and dielectric The tangent (tan δ) and volume resistance were measured.
以下余白
表２
この結果、本発明品である試料隘１〜４と試料ＮＯ，５
とを比較すると本発明品はＮＯ，５に比べて誘電正接（
ｔａｎδ〉が低く電気的特性に優れており、抗折強度も
高いことがわかる。また本発明品と試料Ｎ［Ｌ ６のア
ルミナとを比較すると本発明品の方が焼成温度が低く、
また熱膨張係数について本発明品が３５〜５２Ｘ１０−
７／”Ｃであり、半導体素子のそれに近いのに対し、ア
ルミナは７０ＸｌＯ−７／”Ｃと高い。Margin Table 2 Below, as a result, sample numbers 1 to 4 and samples No. 5, which are products of the present invention,
When compared with the products of the present invention, the dielectric loss tangent
It can be seen that the material has a low tan δ> and excellent electrical properties, and also has a high bending strength. Furthermore, when comparing the product of the present invention and the alumina of sample N [L 6, the product of the present invention has a lower firing temperature;
Also, regarding the coefficient of thermal expansion, the product of the present invention is 35 to 52X10-
7/''C, which is close to that of semiconductor devices, whereas alumina has a high value of 70XlO-7/''C.
さらに誘電率（ε）についても本発明品が５．５〜７．
３であるのに対し、アルミナは９．８と高いことがわか
る。尚、体積抵抗については全ての試料とも高い値を示
しており、絶縁性に優れていることがわかる。Furthermore, the dielectric constant (ε) of the product of the present invention is 5.5 to 7.
3, whereas alumina has a high value of 9.8. It should be noted that all the samples exhibited high volume resistivity values, indicating that they had excellent insulation properties.
［発明の効果］
以上のように本発明の基板材料用ガラス組成物は、溶融
性が良く焼成温度が１０００℃以下で、低膨張、低誘電
率、低誘電正接で、体積抵抗が高く、またセラミック粉
末と混合した場合に高い抗折強度を有するため特に回路
形成用基板として好適である。[Effects of the Invention] As described above, the glass composition for substrate materials of the present invention has good meltability, a firing temperature of 1000°C or less, low expansion, low dielectric constant, low dielectric loss tangent, and high volume resistivity. Since it has high bending strength when mixed with ceramic powder, it is particularly suitable as a substrate for circuit formation.
Claims (2)
２Ｏ＿３１〜３０％、Ｂ＿２Ｏ＿３１〜２５％、Ｎａ＿
２Ｏ０．２〜５％、Ｋ＿２Ｏ０〜５％、ＭｇＯ１〜３０
％、ＣａＯ０〜３０％、Ｂｉ＿２Ｏ＿３０〜３０％から
なることを特徴とする基板材料用ガラス組成物。(1) In weight percentage, SiO_230-65%, Al_
2O_31-30%, B_2O_31-25%, Na_
2O0.2-5%, K_2O0-5%, MgO1-30
%, CaO 0 to 30%, and Bi_2O_ 30 to 30%.
２Ｏ＿３１０〜２０％、Ｂ＿２Ｏ＿３５〜２０％、Ｎａ
＿２Ｏ０．４〜３％、Ｋ＿２Ｏ０．５〜３％、ＭｇＯ４
〜２０％、ＣａＯ５〜２０％、Ｂｉ＿２Ｏ＿３２〜２５
％からなることを特徴とする特許請求の範囲第１項記載
の基板材料用ガラス組成物。(2) In weight percentage, SiO_235-55%, Al_
2O_310-20%, B_2O_35-20%, Na
_2O0.4-3%, K_2O0.5-3%, MgO4
~20%, CaO5~20%, Bi_2O_32~25
% of the glass composition for a substrate material according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24889787A JPH0193436A (en) | 1987-09-30 | 1987-09-30 | Glass composition for substrate material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24889787A JPH0193436A (en) | 1987-09-30 | 1987-09-30 | Glass composition for substrate material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0193436A true JPH0193436A (en) | 1989-04-12 |
Family
ID=17185064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24889787A Pending JPH0193436A (en) | 1987-09-30 | 1987-09-30 | Glass composition for substrate material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0193436A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299916A (en) * | 1992-04-21 | 1993-11-12 | Sumitomo Special Metals Co Ltd | Strip line resonator |
| JP2002121047A (en) * | 2000-10-13 | 2002-04-23 | Shinetsu Quartz Prod Co Ltd | Plasma corrosion-resistant glass member |
| JP2008201645A (en) * | 2007-02-22 | 2008-09-04 | Nippon Sheet Glass Co Ltd | Glass composition |
| CN111646693A (en) * | 2020-06-17 | 2020-09-11 | 深圳南玻科技有限公司 | Low-dielectric-constant and low-loss lithium-aluminum silicate glass, and preparation method and application thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6247196A (en) * | 1985-08-26 | 1987-02-28 | 松下電器産業株式会社 | Ceramic multilayer substrate |
-
1987
- 1987-09-30 JP JP24889787A patent/JPH0193436A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6247196A (en) * | 1985-08-26 | 1987-02-28 | 松下電器産業株式会社 | Ceramic multilayer substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299916A (en) * | 1992-04-21 | 1993-11-12 | Sumitomo Special Metals Co Ltd | Strip line resonator |
| JP2002121047A (en) * | 2000-10-13 | 2002-04-23 | Shinetsu Quartz Prod Co Ltd | Plasma corrosion-resistant glass member |
| JP4614403B2 (en) * | 2000-10-13 | 2011-01-19 | 信越石英株式会社 | Plasma corrosion resistant glass member |
| JP2008201645A (en) * | 2007-02-22 | 2008-09-04 | Nippon Sheet Glass Co Ltd | Glass composition |
| CN111646693A (en) * | 2020-06-17 | 2020-09-11 | 深圳南玻科技有限公司 | Low-dielectric-constant and low-loss lithium-aluminum silicate glass, and preparation method and application thereof |
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