JPH0523548B2 - - Google Patents
Info
- Publication number
- JPH0523548B2 JPH0523548B2 JP59273957A JP27395784A JPH0523548B2 JP H0523548 B2 JPH0523548 B2 JP H0523548B2 JP 59273957 A JP59273957 A JP 59273957A JP 27395784 A JP27395784 A JP 27395784A JP H0523548 B2 JPH0523548 B2 JP H0523548B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode region
- photoelectric conversion
- potential
- transistors
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 64
- 239000003990 capacitor Substances 0.000 claims description 35
- 230000003287 optical effect Effects 0.000 claims description 31
- 238000003860 storage Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000009825 accumulation Methods 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- 101000643895 Homo sapiens Ubiquitin carboxyl-terminal hydrolase 6 Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 102100021015 Ubiquitin carboxyl-terminal hydrolase 6 Human genes 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59273957A JPS61154371A (ja) | 1984-12-27 | 1984-12-27 | 光電変換装置 |
| EP85309496A EP0187047B1 (de) | 1984-12-26 | 1985-12-24 | Bildsensoranordnung |
| DE8585309496T DE3585516D1 (de) | 1984-12-26 | 1985-12-24 | Bildsensoranordnung. |
| EP91201327A EP0455311B1 (de) | 1984-12-26 | 1985-12-24 | Bildsensoranordnung |
| DE3588227T DE3588227T2 (de) | 1984-12-26 | 1985-12-24 | Bildsensoranordnung |
| US07/022,605 US4831454A (en) | 1984-12-26 | 1987-03-05 | Image sensor device having plural photoelectric converting elements |
| US07/700,524 USRE34309E (en) | 1984-12-26 | 1991-05-14 | Image sensor device having plural photoelectric converting elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59273957A JPS61154371A (ja) | 1984-12-27 | 1984-12-27 | 光電変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61154371A JPS61154371A (ja) | 1986-07-14 |
| JPH0523548B2 true JPH0523548B2 (de) | 1993-04-05 |
Family
ID=17534924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59273957A Granted JPS61154371A (ja) | 1984-12-26 | 1984-12-27 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61154371A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4819070A (en) * | 1987-04-10 | 1989-04-04 | Texas Instruments Incorporated | Image sensor array |
| JP3558516B2 (ja) * | 1998-01-26 | 2004-08-25 | 三菱電機株式会社 | アナログ信号増幅器およびそれを含んでなる固体撮像素子 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125982A (ja) * | 1982-01-22 | 1983-07-27 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| JPS59148473A (ja) * | 1983-02-14 | 1984-08-25 | Junichi Nishizawa | ２次元固体撮像装置の読出し方法 |
-
1984
- 1984-12-27 JP JP59273957A patent/JPS61154371A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125982A (ja) * | 1982-01-22 | 1983-07-27 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| JPS59148473A (ja) * | 1983-02-14 | 1984-08-25 | Junichi Nishizawa | ２次元固体撮像装置の読出し方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61154371A (ja) | 1986-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |