JPH05235129A - Inspection method of semiconductor element - Google Patents

Inspection method of semiconductor element

Info

Publication number
JPH05235129A
JPH05235129A JP3118492A JP3118492A JPH05235129A JP H05235129 A JPH05235129 A JP H05235129A JP 3118492 A JP3118492 A JP 3118492A JP 3118492 A JP3118492 A JP 3118492A JP H05235129 A JPH05235129 A JP H05235129A
Authority
JP
Japan
Prior art keywords
inspection
semiconductor wafer
semiconductor
stage
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3118492A
Other languages
Japanese (ja)
Inventor
Hiroaki Maeda
洋明 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP3118492A priority Critical patent/JPH05235129A/en
Publication of JPH05235129A publication Critical patent/JPH05235129A/en
Withdrawn legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To inspect a semiconductor wafer in a stable state when the semiconductor wafer is inspected at a high temperature. CONSTITUTION:A heater stage 4 is installed inside an inspection apparatus 1 in which a semiconductor element inside a semiconductor wafer 9 is inspected. Before the semiconductor wafer 9 is moved onto an inspection stage 3, the semiconductor wafer 9 is heated on the heater stage 4.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高温時における半導体
ウェーハ状態の半導体素子の検査方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for inspecting a semiconductor element in a semiconductor wafer state at high temperature.

【0002】[0002]

【従来の技術】図2を用いて従来の高温時における半導
体素子検査方法を説明する。まずウェーハキャリア6に
入れた多数の半導体ウェーハ8を検査装置(プローバ
ー)5内に入れる。次に検査を行う常温の半導体ウェー
ハ8の一枚が取り出されて検査ステージ7上に運ばれ
る。検査ステージ7上に運ばれた半導体ウェーハ8だけ
がここで初めて検査時の温度に上げるために検査ステー
ジで加熱される。
2. Description of the Related Art A conventional method for inspecting a semiconductor element at a high temperature will be described with reference to FIG. First, a large number of semiconductor wafers 8 placed in the wafer carrier 6 are placed in the inspection device (prober) 5. Next, one of the normal-temperature semiconductor wafers 8 to be inspected is taken out and carried to the inspection stage 7. Only the semiconductor wafer 8 carried onto the inspection stage 7 is heated here for the first time to raise the temperature at the time of inspection.

【0003】[0003]

【発明が解決しようとする課題】従来までの高温時にお
ける半導体検査では、検査ステージ上でアライメントに
かかる時間だけしか加熱を行っていない為に、同一の半
導体ウェーハ内での最初に検査を行うデバイスと最後の
方に検査を行うデバイスとでは、検査時の温度が違い、
半導体素子の特性変化をもたらし正確な検査が行なわれ
ずにいる。また検査ステージ上だけで十分な加熱を行な
おうとすれば時間がかかり生産性低下につながる。また
今後生産性向上のためアライメント時間短縮も考えら
れ、その際にはさらに所定の高温となり得ないことが問
題となる。
In the conventional semiconductor inspection at high temperature, since heating is performed only on the inspection stage for the time required for alignment, a device to be inspected first in the same semiconductor wafer. And the temperature at the time of inspection is different between the device to be inspected towards the end,
Accurate inspection is not performed because it causes changes in the characteristics of semiconductor devices. Also, if it is attempted to perform sufficient heating only on the inspection stage, it will take time and productivity will be reduced. Further, in order to improve productivity in the future, it may be possible to shorten the alignment time, and in that case, it becomes a problem that the predetermined high temperature cannot be achieved.

【0004】[0004]

【課題を解決するための手段】上記課題を解決するため
に本発明の特徴は、半導体ウェーハ内に形成されてある
半導体素子を高温状態で電気的検査を行なうに際して、
複数の半導体ウェーハが収納され、検査装置にセットさ
れたウェーハキャリアから一枚のウェーハを取り出して
前記検査装置内のヒータステージ上に載置して前記半導
体ウェーハを加熱し、たとえば検査に必要な所定の温度
もしくはその近傍に上げておき、しかる後に、前記半導
体ウェーハを検査装置内の検査ステージ上に載置してそ
このヒーターで前記所定の高温に維持して電気的検査を
行なう半導体素子の検査方法にある。
To solve the above-mentioned problems, the present invention is characterized in that when a semiconductor element formed in a semiconductor wafer is electrically inspected at a high temperature,
A plurality of semiconductor wafers are stored and one wafer is taken out from the wafer carrier set in the inspection device and placed on the heater stage in the inspection device to heat the semiconductor wafer. The temperature of the semiconductor wafer is raised to or near that temperature, and then the semiconductor wafer is placed on an inspection stage in an inspection apparatus, and a heater there is maintained at the predetermined high temperature to perform an electrical inspection of a semiconductor element. On the way.

【0005】[0005]

【実施例】次に、本発明について図面を用いて説明す
る。図1は本発明の一実施例を示すもので検査装置1内
に多数の半導体ウェーハ9を収納されたウェーハキャリ
ア6をセットする。ここから一枚の半導体ウェーハ9を
取り出してヒータステージ4上に載置してそこのヒータ
ーで加熱し、好ましくは検査に必要な温度にあらかじめ
上昇させる。しかる後にこの半導体ウェーハ9を検査ス
テージ3上に載置して検査に必要な温度にそこのヒータ
を用いて維持して所定の検査を行う。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 shows an embodiment of the present invention. A wafer carrier 6 containing a large number of semiconductor wafers 9 is set in an inspection apparatus 1. A single semiconductor wafer 9 is taken out from this, placed on the heater stage 4, heated by the heater there, and preferably raised in advance to a temperature required for inspection. Thereafter, the semiconductor wafer 9 is placed on the inspection stage 3 and the temperature required for the inspection is maintained by using the heater there, and a predetermined inspection is performed.

【0006】検査ステージ上でも加熱されるために、最
初に検査を行う半導体素子と最後に検査を行う半導体素
子との温度変化は極力小さくなり、安定した検査を行う
ことができる。また従来方法で温度変化を極力少くしよ
うとすると、検査ステージ上だけで加熱するために、処
理時間が長くなり生産性低下につながるが、本発明では
あらかじめ半導体ウェーハをヒータステージで高温にし
てあるために、処理時間の短縮になり、ひいては生産性
の向上につながる。また、生産性向上の為、アライメン
ト時間が短縮された場合には、現状より最初に検査する
半導体素子と最後の方に検査する半導体素子とでは温度
差が大きくなるが、これにも本発明は十分に対応できる
ものである。検査装置(テスター、もしくはプローバ)
は精密機械でありこれに大きな発熱体をつける事は精度
を維持する上で問題が多い。特に多くの半導体ウェーハ
をウェーハキャリアごと熱すると大量の熱がもれる。本
発明ではこの点、検査ステージの手前にあるヒータステ
ージで一枚の半導体ウェーハのみを温める事で余分な熱
を出さないという特徴をもっている。
Since the semiconductor element to be inspected first and the semiconductor element to be inspected last are changed in temperature as much as possible since they are heated even on the inspection stage, stable inspection can be performed. Further, if it is attempted to reduce the temperature change by the conventional method as much as possible, since the heating is performed only on the inspection stage, the processing time becomes long and the productivity is lowered. In addition, the processing time is shortened, which in turn leads to improved productivity. Further, in order to improve productivity, when the alignment time is shortened, the temperature difference between the semiconductor element to be inspected first and the semiconductor element to be inspected toward the end is larger than the current state. It can deal with it sufficiently. Inspection device (tester or prober)
Is a precision machine, and attaching a large heating element to it is problematic in maintaining accuracy. Particularly when a large number of semiconductor wafers are heated together with the wafer carrier, a large amount of heat is released. In this respect, the present invention is characterized in that the heater stage in front of the inspection stage heats only one semiconductor wafer so that excess heat is not generated.

【0007】[0007]

【発明の効果】以上説明したように本発明では、検査を
行う前に、あらかじめ半導体ウェーハを加熱してその温
度を上昇させておき、検査時の誤差を少くするという効
果がある。又検査時の誤差を少くするために、検査ステ
ージ上だけで加熱すると高温になるのに時間がかかって
いたが、本発明ではあらかじめ検査する前に高温にする
ので時間の短縮、ひいては生産性の向上につながるとい
う効果もある。
As described above, according to the present invention, the semiconductor wafer is heated in advance and the temperature thereof is raised before the inspection, so that the error in the inspection can be reduced. Further, in order to reduce the error at the time of inspection, it took a long time to reach a high temperature when heated only on the inspection stage. However, in the present invention, the temperature is raised before the inspection in advance, so that the time is shortened and eventually the productivity is improved. There is also the effect of leading to improvement.

【0008】また、生産性向上のため、コンゴアライメ
ント時間の短縮も考えられるが、アライメント時間を短
縮すると、現状より一反の半導体ウェーハ内で最初に検
査を行う半導体素子と最後の方に検査を行う半導体素子
とでは温度差が大きくなるが、本発明はこれにも十分対
応できるものである。
In order to improve the productivity, it is possible to shorten the Congo alignment time. However, if the alignment time is shortened, the semiconductor element to be inspected first in the semiconductor wafer, which is one side of the current state, and the last to be inspected. Although the temperature difference between the semiconductor element and the semiconductor element is large, the present invention can sufficiently cope with this.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に用いる検査装置を示す概略
図である。
FIG. 1 is a schematic diagram showing an inspection apparatus used in an embodiment of the present invention.

【図2】従来技術に用いる検査装置を示す概略図であ
る。
FIG. 2 is a schematic view showing an inspection device used in a conventional technique.

【符号の説明】[Explanation of symbols]

1,5 検査装置 2,6 ウェーハキャリヤ 3,7 検査ステージ 4 ヒータステージ 8,9 半導体ウェーハ 1,5 Inspection device 2,6 Wafer carrier 3,7 Inspection stage 4 Heater stage 8,9 Semiconductor wafer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウェーハ内に形成されてある半導
体素子を高温状態で電気的検査を行なうに際して、複数
の半導体ウェーハが収納され、検査装置にセットされた
ウェーハキャリアから一枚のウェーハを取り出して前記
検査装置内のヒータステージ上に載置して前記半導体ウ
ェーハを加熱し、しかる後に、前記半導体ウェーハを検
査装置内の検査ステージ上に載置してそこのヒーターで
前記所定の高温に維持して電気的検査を行なう事を特徴
とする半導体装置の検査方法。
1. When performing an electrical inspection of a semiconductor element formed in a semiconductor wafer at a high temperature, a plurality of semiconductor wafers are stored and one wafer is taken out from a wafer carrier set in an inspection device. The semiconductor wafer is placed on a heater stage in the inspection device to heat the semiconductor wafer, and then the semiconductor wafer is placed on the inspection stage in the inspection device and maintained at the predetermined high temperature by the heater there. A method of inspecting a semiconductor device, characterized by performing an electrical inspection.
JP3118492A 1992-02-19 1992-02-19 Inspection method of semiconductor element Withdrawn JPH05235129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3118492A JPH05235129A (en) 1992-02-19 1992-02-19 Inspection method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3118492A JPH05235129A (en) 1992-02-19 1992-02-19 Inspection method of semiconductor element

Publications (1)

Publication Number Publication Date
JPH05235129A true JPH05235129A (en) 1993-09-10

Family

ID=12324360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3118492A Withdrawn JPH05235129A (en) 1992-02-19 1992-02-19 Inspection method of semiconductor element

Country Status (1)

Country Link
JP (1) JPH05235129A (en)

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990518