JPH05234836A - Gaas single-crystal wafer and its manufacture - Google Patents
Gaas single-crystal wafer and its manufactureInfo
- Publication number
- JPH05234836A JPH05234836A JP3792292A JP3792292A JPH05234836A JP H05234836 A JPH05234836 A JP H05234836A JP 3792292 A JP3792292 A JP 3792292A JP 3792292 A JP3792292 A JP 3792292A JP H05234836 A JPH05234836 A JP H05234836A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dielectric layer
- marking
- laser
- gaas single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54406—Marks applied to semiconductor devices or parts comprising alphanumeric information
Landscapes
- Lasers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半絶縁性のＧａＡｓ単結
晶ウエハ及びその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semi-insulating GaAs single crystal wafer and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来基板供給メーカーが顧客へウエハを
納める場合、ウエハの入っている各トレイにマーキング
を施すことにより識別を行っている。最近ウエハの識別
を一層確実とするためウエハトレイだけではなく、ウエ
ハ裏面に直接マーキングすることにより識別するものの
要求がある。この場合、ＧａＡｓウエハにマーキングす
る方法としてはレーザーマーキングが一般的によく使わ
れている。これはウエハの裏面に直接マーキングする文
字に合わせてレーザーを照射し、これを移動することに
より刻印していくものである。2. Description of the Related Art Conventionally, when a substrate supply maker delivers a wafer to a customer, the identification is performed by marking each tray containing the wafer. Recently, in order to further ensure the identification of the wafer, there is a demand for identification not only by the wafer tray but also by directly marking the back surface of the wafer. In this case, laser marking is generally often used as a method for marking a GaAs wafer. In this method, a laser is irradiated according to the characters to be directly marked on the back surface of the wafer, and the laser is moved to perform marking.
【０００３】図２はマーキングしたウエハの一例を示す
もので、１はＧａＡｓ単結晶ウエハであり、表面は鏡面
仕上げされている。FIG. 2 shows an example of a marked wafer. Reference numeral 1 is a GaAs single crystal wafer, the surface of which is mirror-finished.
【０００４】２はウエハ１の裏面に刻印されたマーキン
グ文字であり、レーザー３を照射し、マーキング文字に
合わせて移動することにより、刻印されたものである。Reference numeral 2 is a marking character imprinted on the back surface of the wafer 1, which is imprinted by irradiating the laser 3 and moving in accordance with the marking character.
【０００５】しかし、この従来のマーキング方法は、ウ
エハの裏面に直接、レーザーを当てて刻印していくもの
である為に、取り扱いによっては刻印した部分からクラ
ックが入り、割れ易い欠点があった。そしてウエハの取
り扱いは、マーキング無しのものよりもさらに注意しな
くてはならなかった。However, in this conventional marking method, since the laser is directly applied to the back surface of the wafer to carry out marking, there is a defect that cracks are generated from the marked portion depending on the handling, and the marking is easy to break. And the handling of the wafer had to be more careful than the unmarked one.
【０００６】[0006]
【発明の目的】本発明の目的は、クラック（割れ）のな
いマーキングを施したＧａＡｓ単結晶ウエハ及びその製
造方法を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a GaAs single crystal wafer having markings without cracks and a method for manufacturing the same.
【０００７】[0007]
【発明の要点】本発明の要旨は、マーキング用ウエハと
してＧａＡｓ単結晶ウエハの裏面に誘電層を形成し、そ
の誘電層の表面にマーキングを施したことにあり、それ
によってウエハ取扱い性を大幅に向上させたものであ
る。The gist of the present invention resides in that a dielectric layer is formed on the back surface of a GaAs single crystal wafer as a marking wafer, and the surface of the dielectric layer is marked. It is an improvement.
【０００８】[0008]
【発明の実施例】図１は本発明製造方法の一実施例を示
すもので、１はＧａＡｓ単結晶ウエハであり、その裏面
には誘電体層４が形成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of the manufacturing method of the present invention, in which 1 is a GaAs single crystal wafer, and a dielectric layer 4 is formed on the back surface thereof.
【０００９】そして誘電体層４の表面には (b)に示す様
にレーザー３が照射され、これをマーキング文字に合わ
せて移動することにより刻印２が (c)に示す様に行われ
るものである。The surface of the dielectric layer 4 is irradiated with a laser 3 as shown in (b), and the marking 2 is performed as shown in (c) by moving the laser 3 in accordance with the marking characters. is there.
【００１０】（具体例）厚さ６００μｍの半絶縁性Ｇａ
Ａｓウエハの裏面にプラズマＣＶＤ装置によりＳｉＯ2
膜を５μｍ堆積し、マーキングする文字に合わせてレー
ザー照射、これを移動しながら約２μｍ刻印していくこ
とにより、ＧａＡｓ単結晶ウエハを製造した。(Specific example) Semi-insulating Ga having a thickness of 600 μm
On the back surface of the As wafer, SiO 2 was deposited by a plasma CVD device.
A GaAs single crystal wafer was manufactured by depositing a film having a thickness of 5 μm, irradiating a laser in accordance with a character to be marked, and marking the film while moving the laser for about 2 μm.
【００１１】このウエハは、レーザーでマーキングされ
ている部分が誘電体層のみであるため、ウエハ取扱い時
のクラックが防止でき、取扱いが容易であり、又、識別
も確実に行えることが確認された。It has been confirmed that, since the laser-marked portion of this wafer is only the dielectric layer, cracks during wafer handling can be prevented, handling is easy, and identification can be performed reliably. ..
【００１２】本発明に於て、ウエハの裏面に形成され誘
電体層としては、ＳｉＯ2 ，ＳｉＮ，ＳｉＯＮが望まし
く、プラズマＣＶＤ装置により容易に形成することがで
きる。誘電層の厚さとしては、レーザーマーキングの条
件にもよるが、１０μｍ以下が好ましい。In the present invention, the dielectric layer formed on the back surface of the wafer is preferably SiO 2 , SiN or SiON, and can be easily formed by a plasma CVD apparatus. The thickness of the dielectric layer is preferably 10 μm or less, though it depends on the laser marking conditions.
【００１３】[0013]
【発明の効果】以上説明した通り、本発明方法により製
造されたＧａＡｓ単結晶ウエハは、レーザーでマーキン
グされている部分が誘電体層のみである為にウエハ取扱
い時によるクラック（割れ）が防止でき、その取扱い性
を大幅に向上させることができ、又、マーキングによる
識別は確実なものであり、その工業的価値は非常に大な
るものがある。As described above, since the GaAs single crystal wafer manufactured by the method of the present invention has only the dielectric layer in the portion marked with the laser, it is possible to prevent cracks during handling of the wafer. The handling property can be greatly improved, and the identification by marking is reliable, and its industrial value is extremely large.
【図１】本発明マーキング法の一実施例を示す横断面図
である。FIG. 1 is a cross-sectional view showing an embodiment of the marking method of the present invention.
【図２】従来のマーキング法により形成したウエハの全
体図(a) 及び横断面図(b) である。FIG. 2 is an overall view (a) and a cross-sectional view (b) of a wafer formed by a conventional marking method.
１ ＧａＡｓウエハ ２ マーキング文字 ３ レーザー ４ 誘電体層 1 GaAs wafer 2 marking character 3 laser 4 dielectric layer
Claims (2)
された絶縁性誘電体層とより成り、該絶縁性誘電体層の
表面にマーキングを施して構成されたことを特徴とする
ＧａＡｓ単結晶ウエハ。1. A GaAs single crystal comprising a GaAs single crystal wafer and an insulating dielectric layer formed on the back surface of the wafer, wherein the surface of the insulating dielectric layer is marked. Wafer.
酸化物、又はシリコンの窒化物、又はシリコンと酸素と
窒素の混合物をプラズマＣＶＤ法により蒸着させて、絶
縁性誘電体層を形成し、該絶縁性誘電体層の表面にレー
ザー照射によりマーキングを施したことを特徴とするＧ
ａＡｓ単結晶ウエハの製造方法。2. An insulating dielectric layer is formed on a back surface of a GaAs single crystal wafer by depositing a silicon oxide, a silicon nitride, or a mixture of silicon, oxygen, and nitrogen by a plasma CVD method. Marking by marking the surface of the insulating dielectric layer with laser irradiation
Method for manufacturing aAs single crystal wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3792292A JPH05234836A (en) | 1992-02-25 | 1992-02-25 | Gaas single-crystal wafer and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3792292A JPH05234836A (en) | 1992-02-25 | 1992-02-25 | Gaas single-crystal wafer and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05234836A true JPH05234836A (en) | 1993-09-10 |
Family
ID=12511041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3792292A Pending JPH05234836A (en) | 1992-02-25 | 1992-02-25 | Gaas single-crystal wafer and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05234836A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100698098B1 (en) * | 2005-09-13 | 2007-03-23 | 동부일렉트로닉스 주식회사 | Method for Manufacturing of Semiconductor Device |
| JP2009534858A (en) * | 2006-04-25 | 2009-09-24 | エプコス アクチエンゲゼルシャフト | Device using optical marking, manufacturing method and use |
| CN106425105A (en) * | 2016-12-08 | 2017-02-22 | 中国电子科技集团公司第四十六研究所 | Method for printing laser identifier through gallium arsenide wafer |
-
1992
- 1992-02-25 JP JP3792292A patent/JPH05234836A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100698098B1 (en) * | 2005-09-13 | 2007-03-23 | 동부일렉트로닉스 주식회사 | Method for Manufacturing of Semiconductor Device |
| JP2009534858A (en) * | 2006-04-25 | 2009-09-24 | エプコス アクチエンゲゼルシャフト | Device using optical marking, manufacturing method and use |
| US8691369B2 (en) | 2006-04-25 | 2014-04-08 | Epcos Ag | Element with optical marking, manufacturing method, and use |
| CN106425105A (en) * | 2016-12-08 | 2017-02-22 | 中国电子科技集团公司第四十六研究所 | Method for printing laser identifier through gallium arsenide wafer |
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